CN106301318B - Isolation driving circuit of MOSFET device - Google Patents
Isolation driving circuit of MOSFET device Download PDFInfo
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- CN106301318B CN106301318B CN201510240410.8A CN201510240410A CN106301318B CN 106301318 B CN106301318 B CN 106301318B CN 201510240410 A CN201510240410 A CN 201510240410A CN 106301318 B CN106301318 B CN 106301318B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The embodiment of the invention provides an isolation driving circuit of a MOSFET device. The circuit comprises: the low-voltage control part comprises a first current-limiting resistor, a second MOSFET and a driving circuit of the second MOSFET, wherein the driving circuit of the second MOSFET comprises a first filter capacitor, a second filter capacitor and a second current-limiting resistor. According to the embodiment of the invention, the low-voltage control part is connected with the input end of the isolation part of the isolation driving circuit of the MOSFET device, so that when the singlechip inputs low voltage to the input end of the isolation part to lead to conduction between pins of the input end of the isolation part to generate current, the current flows into the low-voltage control part, and the current consumption of the singlechip caused by the current flowing into the singlechip is prevented.
Description
Technical Field
The embodiment of the invention relates to the technical field of power electronic driving application, in particular to an isolation driving circuit of a MOSFET device.
Background
A metal oxide semiconductor field effect transistor (Metal Oxide Semiconductor Field Effect Transistor, MOSFET) is a voltage controlled type device, and is divided into an N-channel MOSFET and a P-channel MOSFET according to the polarity of the operating current-carrying electrons. For the driving circuit of the MOSFET, the driving circuit structure of the MOSFET is different due to different requirements of application occasions.
As shown in fig. 1, the structure diagram of the isolation driving circuit applied to the P-channel MOSFET device with low switching speed and high output voltage of the P-channel MOSFET terminal and needing electrical isolation is shown, and the isolation driving circuit of the P-channel MOSFET device comprises a low-voltage control part, an isolation part and a P-channel MOSFET driving part, wherein the low-voltage control part comprises a current-limiting resistor R3, the isolation part adopts an optocoupler G1 to perform electrical isolation, and the P-channel MOSFET driving part comprises two current-limiting resistors R1 and R2.
As shown in fig. 2, the structure diagram of the isolation driving circuit applied to the N-channel MOSFET device with low switching speed and high output voltage of the N-channel MOSFET terminal and needing electrical isolation is shown, and the isolation driving circuit of the N-channel MOSFET device comprises a low-voltage control portion, an isolation portion and an N-channel MOSFET driving portion, wherein the low-voltage control portion comprises a current-limiting resistor R3, the isolation portion adopts an optocoupler G1 to perform electrical isolation, and the N-channel MOSFET driving portion comprises two current-limiting resistors R1 and R2.
Because the pin 2 of the optical coupler G1 of the driving circuit of the N channel MOSFET or the P channel MOSFET, namely the pin PPSA-CTR, is directly connected with the singlechip, when the singlechip inputs low voltage to the pin 2 of the optical coupler G1 through the pin PPSA-CTR, the pin 1 of the optical coupler G1 is conducted with the pin 2 to generate current, and the current flows into the singlechip through the pin PPSA-CTR, so that the current consumption of the singlechip is larger.
Disclosure of Invention
The embodiment of the invention provides an isolation driving circuit of a MOSFET device, which is used for preventing larger current consumption of a singlechip.
An aspect of an embodiment of the present invention provides an isolation driving circuit of a MOSFET device, including: a low voltage control section, an isolation section, and a driving section of the first MOSFET, wherein,
the low-voltage control part comprises a first current limiting resistor, a second MOSFET and a driving circuit of the second MOSFET, one end of the first current limiting resistor is connected with a first input line of the input end of the isolation part, the other end of the first current limiting resistor is connected with high voltage, the drain electrode of the second MOSFET is connected with a second input line of the input end of the isolation part, the source electrode of the second MOSFET is grounded, the driving circuit of the second MOSFET comprises a first filter capacitor, a second filter capacitor and a second current limiting resistor, one end of the second current limiting resistor is electrically connected with the gate electrode of the second MOSFET, the first filter capacitor is connected between the drain electrode and the gate electrode of the second MOSFET, and the second filter capacitor is connected between the source electrode and the gate electrode of the second MOSFET;
a grid electrode of the first MOSFET is connected with a first output line of the output end of the isolation part;
the driving part of the first MOSFET comprises a first resistor and a second resistor, the first resistor is connected between the source electrode and the grid electrode of the first MOSFET, and one end of the second resistor is connected with the second output line of the output end of the isolation part.
According to the isolation driving circuit of the MOSFET device, the low-voltage control part is connected to the input end of the isolation part of the isolation driving circuit of the MOSFET device, so that when the single chip microcomputer inputs low voltage to the input end of the isolation part to cause conduction between pins of the input end of the isolation part to generate current, the current flows into the low-voltage control part, and the current flowing into the single chip microcomputer is prevented from causing larger current consumption of the single chip microcomputer.
Drawings
Fig. 1 is a circuit diagram of an isolated drive circuit of a prior art P-channel MOSFET device;
fig. 2 is a circuit diagram of an isolated drive circuit of an N-channel MOSFET device of the prior art;
fig. 3 is a circuit diagram of an isolation driving circuit of a P-channel MOSFET device according to an embodiment of the present invention;
fig. 4 is a circuit diagram of an isolation driving circuit of an N-channel MOSFET device according to an embodiment of the present invention;
fig. 5 is a circuit diagram of an isolated driving circuit of a P-channel MOSFET device according to another embodiment of the present invention;
fig. 6 is a circuit diagram of an isolated driving circuit of an N-channel MOSFET device according to another embodiment of the present invention;
fig. 7 is a circuit diagram of an isolated driving circuit of a P-channel MOSFET device according to another embodiment of the present invention;
fig. 8 is a circuit diagram of an isolated driving circuit of an N-channel MOSFET device according to another embodiment of the present invention;
fig. 9 is a circuit diagram of an isolated driving circuit of a P-channel MOSFET device according to another embodiment of the present invention;
fig. 10 is a circuit diagram of an isolated driving circuit of an N-channel MOSFET device according to another embodiment of the present invention.
Detailed Description
Fig. 3 is a circuit diagram of an isolated driving circuit of a P-channel MOSFET device according to an embodiment of the present invention. As shown in fig. 3, the isolation driving circuit of the P-channel MOSFET device comprises a low-voltage control part, an isolation part and a driving part of a first MOSFET, wherein the low-voltage control part comprises a first current limiting resistor R3, a second MOSFET NMOS1 and a driving circuit of the second MOSFET, one end of the first current limiting resistor R3 is connected with a first input line 1 of an input end of the isolation part G1, the other end of the first current limiting resistor R3 is connected with a high voltage, a drain electrode of the second MOSFET NMOS1 is connected with a second input line 2 of the input end of the isolation part G1, a source electrode of the second MOSFET NMOS1 is grounded, the driving circuit of the second MOSFET NMOS1 comprises a first filter capacitor C1, a second filter capacitor C2 and a second current limiting resistor R4, one end of the second current limiting resistor R4 is electrically connected with a gate electrode of the second MOSFET NMOS1, the first filter capacitor C1 is connected between a drain electrode and the gate electrode of the second MOSFET NMOS1, and the second filter capacitor C2 is connected between the source electrode and the gate electrode of the second MOSFET 1; the grid electrode of the first MOSFET PMOS1 is connected with a first output line 4 of the output end of the isolation part G1; the driving part of the first MOSFET PMOS1 includes a first resistor R1 and a second resistor R2, the first resistor R1 being connected between the source and the gate of the first MOSFET PMOS1, one end of the second resistor R2 being connected to the second output line 3 of the output end of the isolation part G1.
In the embodiment of the invention, the first MOSFET is a P-channel MOSFET, and the second MOSFET is an N-channel MOSFET; the other end of the second resistor R2 is grounded; pin 1 of the P-channel MOSFET PMOS1 is a gate, pin 2 is a drain, pin 3 is a source, pin 1 of the N-channel MOSFET NMOS1 is a gate, pin 2 is a drain, and pin 3 is a source.
The first current limiting resistor R3 is used for limiting the current of the input end of the isolation part G1, preventing the current of the input end of the isolation part G1 from excessively reducing the service life of the isolation part G1, and the NMOS1 is used for controlling the switch of the isolation part G1 and has the function of reducing the current output of the control end PPSA-CTR. The first filter capacitor C1 and the second filter capacitor C2 are used for filtering the input end of the NMOS 1. The second resistor R2 plays a role of current limiting, and the first resistor R1 has a role of charging the gate of the PMOS1 in addition to the role of current limiting.
Fig. 4 is a circuit diagram of an isolation driving circuit of an N-channel MOSFET device according to an embodiment of the present invention. As shown in fig. 4, the isolation driving circuit of the N-channel MOSFET device comprises a low-voltage control part, an isolation part and a driving part of a first MOSFET, wherein the low-voltage control part comprises a first current limiting resistor R3, a second MOSFET NMOS1 and a driving circuit of the second MOSFET, one end of the first current limiting resistor R3 is connected with a first input line 1 of an input end of the isolation part G1, the other end of the first current limiting resistor R3 is connected with a high voltage, a drain electrode of the second MOSFET NMOS1 is connected with a second input line 2 of the input end of the isolation part G1, a source electrode of the second MOSFET NMOS1 is grounded, the driving circuit of the second MOSFET NMOS1 comprises a first filter capacitor C1, a second filter capacitor C2 and a second current limiting resistor R4, one end of the second current limiting resistor R4 is electrically connected with a gate electrode of the second MOSFET NMOS1, the first filter capacitor C1 is connected between a drain electrode and the gate electrode of the second MOSFET NMOS1, and the second filter capacitor C2 is connected between the source electrode and the gate electrode of the second MOSFET 1; the gate of the first MOSFET NMOS2 is connected to the first output line 3 of the output end of the isolation portion G1; the driving portion of the first MOSFET NMOS2 includes a first resistor R1 and a second resistor R2, the first resistor R1 being connected between the source and the gate of the first MOSFET NMOS2, one end of the second resistor R2 being connected to the second output line 4 of the output end of the isolation portion G1.
In the embodiment of the invention, the first MOSFET is a first N-channel MOSFET, and the second MOSFET is a second N-channel MOSFET; the other end of the second resistor R2 is connected with high voltage; pin 1 of the first MOSFET NMOS2 is a gate, pin 2 is a drain, and pin 3 is a source, and pin 1 of the second MOSFET NMOS1 is a gate, pin 2 is a drain, and pin 3 is a source.
The first current limiting resistor R3 is used for limiting the current of the input end of the isolation part G1, preventing the current of the input end of the isolation part G1 from excessively reducing the service life of the isolation part G1, and the NMOS1 is used for controlling the switch of the isolation part G1 and has the function of reducing the current output of the control end PPSA-CTR. The first filter capacitor C1 and the second filter capacitor C2 are used for filtering the input end of the NMOS 1. The second resistor R2 plays a role of current limiting, and the first resistor R1 has a role of charging the gate of the NMOS2 in addition to the role of current limiting.
According to the embodiment of the invention, the low-voltage control part is connected with the input end of the isolation part of the isolation driving circuit of the MOSFET device, so that when the singlechip inputs low voltage to the input end of the isolation part to lead to conduction between pins of the input end of the isolation part to generate current, the current flows into the low-voltage control part, and the current consumption of the singlechip caused by the current flowing into the singlechip is prevented.
Fig. 5 is a circuit diagram of an isolated driving circuit of a P-channel MOSFET device according to another embodiment of the present invention; fig. 6 is a circuit diagram of an isolated driving circuit of an N-channel MOSFET device according to another embodiment of the present invention. On the basis of the embodiment, the driving circuit of the second MOSFET further includes a discharge loop, the discharge loop is connected in parallel with the second current limiting resistor, and the discharge loop is formed by connecting a third resistor and a diode in series.
As shown in fig. 5 and 6, the driving circuit of the second MOSFET NMOS1 further includes a discharge loop including a third resistor R5 and a diode D1, the third resistor R5 and the diode D1 being connected in series, and the discharge loop being connected in parallel with the second current limiting resistor R4. When the singlechip inputs high voltage through the pin PPSA-CTR, the diode D1 is not conducted, namely the discharge loop is not conducted, the second current limiting resistor R4 is conducted, current flows into the grid electrode of the second MOSFET NMOS1, when the singlechip inputs low voltage through the pin PPSA-CTR, the diode D1 is conducted, namely the discharge loop is conducted, the second current limiting resistor R4 is conducted, current flows into the second current limiting resistor R4 and the discharge loop from the grid electrode of the second MOSFET NMOS1 respectively, namely the discharge loop formed by the third resistor R5 and the diode D1 in series plays a role of rapid discharge.
According to the embodiment of the invention, the discharge loop is added to the driving circuit of the second MOSFET, so that the current flowing into the second MOSFET can be rapidly discharged.
Fig. 7 is a circuit diagram of an isolated driving circuit of a P-channel MOSFET device according to another embodiment of the present invention; fig. 8 is a circuit diagram of an isolated driving circuit of an N-channel MOSFET device according to another embodiment of the present invention; fig. 9 is a circuit diagram of an isolated driving circuit of a P-channel MOSFET device according to another embodiment of the present invention; fig. 10 is a circuit diagram of an isolated driving circuit of an N-channel MOSFET device according to another embodiment of the present invention. On the basis of the above embodiment, the driving portion of the first MOSFET further includes a zener diode, one end of which is connected to the source of the first MOSFET, and the other end of which is connected to the second output line.
As shown in fig. 7, on the basis of fig. 5, the driving part of the first MOSFET PMOS1 further includes a zener diode T1, one end of the zener diode T1 is connected to the source of the first MOSFET PMOS1, the other end of the zener diode T1 is connected to the second output line 3, and the zener diode T1 is used for limiting the voltage applied to the gate of the PMOS1, so as to prevent the gate voltage of the PMOS1 from being too high to damage the first MOSFET PMOS1.
As shown in fig. 9, on the basis of fig. 3, the driving part of the first MOSFET PMOS1 further includes a zener diode T1, one end of the zener diode T1 is connected to the source of the first MOSFET PMOS1, the other end of the zener diode T1 is connected to the second output line 3, and the zener diode T1 is used for limiting the voltage applied to the gate of the PMOS1, so as to prevent the gate voltage of the PMOS1 from being too high to damage the first MOSFET PMOS1.
As shown in fig. 8, on the basis of fig. 6, the driving part of the first MOSFET NMOS2 further includes a zener diode T1, one end of the zener diode T1 is connected to the source of the first MOSFET NMOS2, the other end of the zener diode T1 is connected to the second output line 4, and the zener diode T1 is used for limiting the voltage applied to the gate of the NMOS2, so as to prevent the gate voltage of the NMOS2 from being too high to damage the first MOSFET NMOS2.
As shown in fig. 10, on the basis of fig. 4, the driving part of the first MOSFET NMOS2 further includes a zener diode T1, one end of the zener diode T1 is connected to the source of the first MOSFET NMOS2, the other end of the zener diode T1 is connected to the second output line 4, and the zener diode T1 is used for limiting the voltage applied to the gate of the NMOS2, so as to prevent the gate voltage of the NMOS2 from being too high to damage the first MOSFET NMOS2.
According to the embodiment of the invention, the voltage-stabilizing diode is added to the driving part of the first MOSFET to limit the voltage applied to the grid electrode of the first MOSFET, so that the first MOSFET is prevented from being damaged due to the fact that the grid electrode voltage of the first MOSFET is too high.
On the basis of the embodiment, the isolation part is an optocoupler.
The power of the first MOSFET is greater than the power of the second MOSFET.
The isolation part G1 in the figures 3-10 is electrically isolated by adopting an optocoupler, and the voltage withstand value and the switching speed of the optocoupler are selected according to actual needs. The power of PMOS1 is greater than that of NMOS 1; the power of NMOS2 is greater than the power of NMOS 1.
In summary, in the embodiment of the invention, the input end of the isolation part of the isolation driving circuit of the MOSFET device is connected with the low voltage control part, so that when the input end of the isolation part is inputted with low voltage by the singlechip to cause conduction between pins of the input end of the isolation part to generate current, the current flows into the low voltage control part, and the current consumption of the singlechip caused by the current flowing into the singlechip is prevented; by adding a discharge loop in the driving circuit of the second MOSFET, the current flowing into the second MOSFET can be rapidly discharged; by adding a zener diode to the driving portion of the first MOSFET, the magnitude of the voltage applied to the gate of the first MOSFET is limited, preventing the first MOSFET from being damaged by excessive gate voltage.
In the several embodiments provided by the present invention, it should be understood that the disclosed apparatus and method may be implemented in other manners. For example, the apparatus embodiments described above are merely illustrative, e.g., the division of the units is merely a logical function division, and there may be additional divisions when actually implemented, e.g., multiple units or components may be combined or integrated into another system, or some features may be omitted or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be an indirect coupling or communication connection via some interfaces, devices or units, which may be in electrical, mechanical or other form.
The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional unit in the embodiments of the present invention may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in hardware plus software functional units.
The integrated units implemented in the form of software functional units described above may be stored in a computer readable storage medium. The software functional unit is stored in a storage medium, and includes several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) or a processor (processor) to perform part of the steps of the methods according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a random access Memory (Random Access Memory, RAM), a magnetic disk, or an optical disk, or other various media capable of storing program codes.
It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-described division of the functional modules is illustrated, and in practical application, the above-described functional allocation may be performed by different functional modules according to needs, i.e. the internal structure of the apparatus is divided into different functional modules to perform all or part of the functions described above. The specific working process of the above-described device may refer to the corresponding process in the foregoing method embodiment, which is not described herein again.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (9)
1. An isolated drive circuit for a MOSFET device, comprising: a low voltage control section, an isolation section, and a driving section of the first MOSFET, wherein,
the low-voltage control part comprises a first current limiting resistor, a second MOSFET and a driving circuit of the second MOSFET, one end of the first current limiting resistor is connected with a first input line of the input end of the isolation part, the other end of the first current limiting resistor is connected with high voltage, the drain electrode of the second MOSFET is connected with a second input line of the input end of the isolation part, the source electrode of the second MOSFET is grounded, the driving circuit of the second MOSFET comprises a first filter capacitor, a second filter capacitor and a second current limiting resistor, one end of the second current limiting resistor is electrically connected with the gate electrode of the second MOSFET, the first filter capacitor is connected between the drain electrode and the gate electrode of the second MOSFET, and the second filter capacitor is connected between the source electrode and the gate electrode of the second MOSFET;
a grid electrode of the first MOSFET is connected with a first output line of the output end of the isolation part;
the driving part of the first MOSFET comprises a first resistor and a second resistor, the first resistor is connected between the source electrode and the grid electrode of the first MOSFET, and one end of the second resistor is connected with the second output line of the output end of the isolation part.
2. The isolated drive circuit of a MOSFET device of claim 1, wherein the first MOSFET is a P-channel MOSFET and the second MOSFET is an N-channel MOSFET.
3. The isolated drive circuit of a MOSFET device of claim 2, wherein the other end of the second resistor is grounded.
4. The isolated drive circuit of a MOSFET device of claim 1, wherein the first MOSFET is a first N-channel MOSFET and the second MOSFET is a second N-channel MOSFET.
5. The isolated drive circuit of a MOSFET device of claim 4, wherein the other end of the second resistor is terminated at a high voltage.
6. The isolated drive circuit of a MOSFET device according to any one of claims 1-5, wherein the drive circuit of the second MOSFET further comprises a discharge loop connected in parallel with the second current limiting resistor, the discharge loop being comprised of a third resistor and a diode connected in series.
7. The isolated drive circuit of a MOSFET device according to claim 6, wherein the drive section of the first MOSFET further comprises a zener diode, one end of the zener diode being connected to the source of the first MOSFET, and the other end of the zener diode being connected to the second output line.
8. The isolated drive circuit of a MOSFET device of claim 7, wherein the isolated portion is an optocoupler.
9. The isolated drive circuit of a MOSFET device of claim 8, wherein the power of the first MOSFET is greater than the power of the second MOSFET.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510240410.8A CN106301318B (en) | 2015-05-12 | 2015-05-12 | Isolation driving circuit of MOSFET device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510240410.8A CN106301318B (en) | 2015-05-12 | 2015-05-12 | Isolation driving circuit of MOSFET device |
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| CN106301318A CN106301318A (en) | 2017-01-04 |
| CN106301318B true CN106301318B (en) | 2023-07-18 |
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| CN107124168B (en) * | 2017-04-19 | 2020-07-31 | 广州视源电子科技股份有限公司 | Isolated electronic switch circuit |
| CN107124169A (en) * | 2017-04-19 | 2017-09-01 | 广州视源电子科技股份有限公司 | Electronic switch circuit |
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| US4347447A (en) * | 1981-04-16 | 1982-08-31 | Mostek Corporation | Current limiting MOS transistor driver circuit |
| JPH0818417A (en) * | 1994-06-24 | 1996-01-19 | Matsushita Electric Works Ltd | Power element drive protective circuit and mosfet drive protective circuit |
| CN203278782U (en) * | 2013-04-01 | 2013-11-06 | 薛涛 | Drive and protection circuit of high-frequency low-power MOSFET |
| CN103475241A (en) * | 2013-10-13 | 2013-12-25 | 西安电子科技大学 | Self-driven full-bridge synchronous rectification circuit |
| CN106207978A (en) * | 2016-08-24 | 2016-12-07 | 北京卫星制造厂 | One efficiently isolates circuit |
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| US4347447A (en) * | 1981-04-16 | 1982-08-31 | Mostek Corporation | Current limiting MOS transistor driver circuit |
| JPH0818417A (en) * | 1994-06-24 | 1996-01-19 | Matsushita Electric Works Ltd | Power element drive protective circuit and mosfet drive protective circuit |
| CN203278782U (en) * | 2013-04-01 | 2013-11-06 | 薛涛 | Drive and protection circuit of high-frequency low-power MOSFET |
| CN103475241A (en) * | 2013-10-13 | 2013-12-25 | 西安电子科技大学 | Self-driven full-bridge synchronous rectification circuit |
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