CN106301071A - Low frequency piezoelectric type MEMS vibration energy collector and preparation method thereof - Google Patents
Low frequency piezoelectric type MEMS vibration energy collector and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 239000010408 film Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 239000000919 ceramic Substances 0.000 claims abstract description 17
- 239000003822 epoxy resin Substances 0.000 claims abstract description 16
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 16
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000005498 polishing Methods 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000003292 glue Substances 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 229910000906 Bronze Inorganic materials 0.000 claims description 5
- 239000010974 bronze Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910001020 Au alloy Inorganic materials 0.000 claims description 3
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 2
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910001120 nichrome Inorganic materials 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 14
- 229910052738 indium Inorganic materials 0.000 claims 1
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- 238000005530 etching Methods 0.000 abstract description 3
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- 238000005516 engineering process Methods 0.000 description 6
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- 238000004544 sputter deposition Methods 0.000 description 3
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- 238000005520 cutting process Methods 0.000 description 2
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- 238000001020 plasma etching Methods 0.000 description 2
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- 239000002131 composite material Substances 0.000 description 1
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- 230000007613 environmental effect Effects 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
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- 239000002210 silicon-based material Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/18—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/22—Methods relating to manufacturing, e.g. assembling, calibration
Abstract
The invention provides a kind of low frequency piezoelectric type MEMS vibration energy collector and preparation method thereof, harvester includes that silicon fixed pedestal, piezoelectric cantilever and mass, described piezoelectric cantilever include metallic film substrate, and piezoelectric thin film layer and electrode layer；Piezoelectric thin film layer adheres on metallic film substrate by epoxy resin, sputters layer of metal electrode on piezoelectric thin film layer surface, obtains electrode layer, thus realizes electrode layer and the metallic film substrate mechanical series of piezoelectric thin film layer.Method includes: one, prepare metallic film substrate；Two, sputter or evaporation electrode layer to piezoelectric ceramic piece single-sided polishing and on burnishing surface；Three, by being bonded and thinning, deep silicon etching process obtains piezoelectric cantilever；Four, cut quality block use the method for stickup to make the free end sticking Quality block of piezoelectric cantilever.Present invention reduces the natural frequency of device, improve the capacity usage ratio adopting energy element, and method is simply easily achieved.
Description
Technical field
The present invention relates to a kind of device and method of micro-electromechanical system field, in particular it relates to a kind of low frequency piezoelectricity
Formula MEMS vibration energy collector and preparation method thereof.
Background technology
In recent years, continuous progressive along with wireless telecommunications and MEMS (MEMS) technology, as microelectronic device and
The microsystem ranges of application such as microsensor constantly expand.By the most ubiquitous, there is communicate with computing capability small
Sensor node, is constituted in the way of radio communication, and can independently complete the wireless sensing of appointed task according to environmental demand
Device network has a wide range of applications at numerous areas such as military affairs, industry, household, environment.
Currently, the electric energy being device at wireless sensing node etc. supplies, and still takes traditional energy-provision way, i.e. profit
With battery as main energy supply device.But, owing to wireless sensor network node is the most actionless, along with
Network distribution extensive, the micro element number constituting radio sensing network is more and more huger, and the working position of some micro element
Put and be in field extreme environment, it is difficult to touch again, it is clear that battery power supply mode is increasingly difficult to meet requirement.Therefore, in order to
Extending battery and minimizing electronic component is mentioned, people start to be devoted to absorb energy from surrounding electronic component environment
And it is converted into electric energy method to replace battery the micro elements such as wireless senser forever to be powered research.
At present, ambient vibration energy acquisition technology is to solve the effective ways of problem above.Imitate with the piezoelectricity of piezoelectric
Should be used as the miniature piezoelectric TRT that ring energy basic engineering makes little because of possessing volume, energy density height, the life-span is long, can be with
The advantages such as MEMS processing technique is compatible, thus obtain and pay close attention to widely.
Utilizing the piezoelectric type vibration energy collecting device that MEMS technology is developed, conventional structure is that free end adds a concentration matter
The cantilever beam structure of gauge block, this cantilever beam structure is usually and is made up of supporting layer and attached thereto one lamination conductive film or thick film
Composite construction.Inheriting the MEMS piezoelectric type vibration energy collecting device of manufacture at present completely, natural frequency is the highest, at natural environment
Collection is extremely difficult to resonance effect.
Find by prior art documents, Tang Gang "physica status solidi(a) " in mention one
Piezoelectric vibration energy harvester prepared by the method utilizing piezoelectric ceramics to be bonded with silicon, the piezoelectric energy made in this way is adopted
Storage, although its physical dimension is the least, but its first natural frequency frequency is high, and gathering low-frequency vibration energy around can not
See.And Huicong Liu "Microsystem Technologies" write articles the piezoelectric energy collection of a kind of S type MEMS low frequency
Device, the first natural frequency of device can reach below 30hz, but due to the characteristic of silicon materials, causes device to be easy to occur
Fracture.And be not suitable for application and power for micro-systems such as wireless sensers.
Through retrieval, Publication No. CN105186922A, the Chinese invention patent Shen of Application No. CN201510704059.3
Please, this disclosure of the invention one piezoelectricity-franklinic electricity combined type MEMS wideband energy collecting device and preparation method thereof, including piezoelectric energy
Harvester main structure, stopper and pad；Piezoelectric energy collector main structure include silicon fixed pedestal, silicon based piezoelectricity cantilever beam and
Mass；Silicon fixed pedestal includes the silicon dioxide layer of silicon layer and both sides thereof；Silicon based piezoelectricity cantilever beam includes that silicon cantilever supports
Layer and piezoelectric thick layer thereon；Silicon cantilever supporting layer includes silicon layer, silicon dioxide layer and supporting layer electrode layer；Piezoelectric thick
Layer includes the piezoelectric thick electrode layer on piezoelectric thick and surface thereof；Mass includes the friction on integrated silicon mass and surface thereof
Layer；Stopper includes frictional layer pedestal, electrode layer and frictional layer；Pad is between silicon fixed pedestal and stopper.
But above-mentioned patent uses silicon as substrate, it is impossible to solve substrate in vibration processes and rupture with piezoelectric thin film layer
Problem.
Summary of the invention
For defect of the prior art, it is an object of the invention to provide low frequency piezoelectric type MEMS vibration energy collector and
Its preparation method, can be operated under low frequency high intensity, uses metal substrate, can solve substrate and pressure in vibration processes very well
The problem that thin film layer occurs fracture.
According to an aspect of the present invention, it is provided that a kind of low frequency piezoelectric type MEMS vibration energy collector, including: silicon is fixed
Pedestal, piezoelectric cantilever and mass, wherein: one end of described piezoelectric cantilever is fixed on described silicon fixed pedestal, described
The other end of piezoelectric cantilever is unsettled and fixing with described mass is connected；Described piezoelectric cantilever includes: metallic film substrate,
And invest the piezoelectric thin film layer on metallic film substrate and electrode layer；Wherein: piezoelectric thin film layer is adhered to by epoxy resin
On metallic film substrate, sputter layer of metal electrode on piezoelectric thin film layer surface, obtain electrode layer, thus realize piezoelectric thin film layer
Electrode layer and metallic film substrate mechanical series.
Preferably, described metallic film substrate is copper, phosphor bronze, beryllium-bronze, can solve very well in vibration processes substrate with
The problem that piezoelectric thin film layer occurs fracture.
Preferably, described piezoelectric thin film layer is prepared by the thinning of piezoelectric thick.
Preferably, described electrode layer is that Cr, Ni, NiCr alloy, Cr/Au alloy or Ti/Pt alloy are made.
Preferably, described piezoelectric cantilever and mass realize pasting by epoxide-resin glue.
Preferably, described mass is tungsten mass, or nickel mass.
Preferably, described silicon fixed pedestal by silicon chip and is arranged at the silicon dioxide layer of silicon chip both sides and constitutes.
According to another aspect of the present invention, it is provided that the preparation side of a kind of low frequency piezoelectric type MEMS vibration energy collector
Method, comprises the following steps:
The first step, piezoelectric ceramic piece single-sided polishing, and sputter layer of metal electrode at piezoelectric ceramic piece burnishing surface；
Second step, prepares piezoelectric membrane by bonding and thining method on substrate；
3rd step, uses micro fabrication to prepare piezoelectric cantilever；
4th step, cut quality block, use the method pasted to make the free end of piezoelectric cantilever paste fixing with mass.
Preferably, in the first step, described metallic film substrate is pasted onto on the silicon chip of two-sided oxidation by epoxide-resin glue.
Preferably, in the 3rd step, by single-sided polishing, the piezoelectric ceramic piece that sputters or be evaporated metal electrode layer, pass through ring
Epoxy resins is pasted onto on metallic film substrate, is then thinned to by piezoelectric ceramic piece thickness by mechanical-chemistry grinding finishing method
5-100um, then sputters on thinning of piezoelectric ceramic piece or evaporates layer of metal electrode layer, thus making piezoelectric membrane.
Compared with prior art, the present invention has a following beneficial effect:
The present invention uses the metallic films such as phosphor bronze as substrate, substrate in solution vibration processes that together can be effective
Problem with piezoelectric thin film layer occurs fracture, had both achieved low frequency and had been effectively increased the toughness of device, can grow
The operation of time, and can run under the vibration condition of high intensity.
The present invention uses cantilever beam structure, greatly reduces the natural frequency of device, improves the energy profit adopting energy element
By rate, solving the problem that traditional MEMS piezoelectric energy collector natural frequency is high, preparation method is simple, it is easy to accomplish.
The described harvester natural frequency prepared by the present invention is substantially reduced, it is easier to gather the vibration in surrounding
Can, and described preparation method is simple and reliable, can processing integrated with micro fabrication, in design and the making of wireless sensor node
In be with a wide range of applications.
Accompanying drawing explanation
By the detailed description non-limiting example made with reference to the following drawings of reading, the further feature of the present invention,
Purpose and advantage will become more apparent upon:
Fig. 1 is the harvester structural representation of one embodiment of the invention；
In figure: silicon fixed pedestal 1, piezoelectric cantilever 2, mass 3, silicon chip 4, silicon dioxide layer 5, substrate 6, piezoelectric membrane
Layer 7, electrode layer 8, epoxide-resin glue 9.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is described in detail.Following example will assist in the technology of this area
Personnel are further appreciated by the present invention, but limit the present invention the most in any form.It should be pointed out that, the ordinary skill to this area
For personnel, without departing from the inventive concept of the premise, it is also possible to make some deformation and improvement.These broadly fall into the present invention
Protection domain.
As it is shown in figure 1, the present embodiment provides a kind of low frequency piezoelectric type MEMS vibration energy collector, including: silicon fixed base
Seat 1, piezoelectric cantilever 2 and mass 3, wherein: one end of described piezoelectric cantilever 2 is fixed on described silicon fixed pedestal 1, institute
State the other end of piezoelectric cantilever 2 unsettled and fixing with described mass 3 be connected.
Described piezoelectric cantilever includes: substrate 6 and invest the piezoelectric thin film layer 7 on substrate 6 and electrode layer 8, wherein: electricity
Pole layer 8 is covered in the upper and lower surface of piezoelectric thin film layer 7, and described substrate 6 is metallic film substrate.Piezoelectric thin film layer 7 passes through epoxy
Resin adheres on metallic film substrate 6, by the method for sputtering or evaporation at piezoelectric thin film layer surface sputtering layer of metal electricity
Pole, obtains electrode layer 8, thus realizes electrode layer and the metallic film substrate mechanical series of piezoelectric thin film layer.
In the present embodiment, described silicon fixed pedestal 1 is by silicon chip 4 and is arranged at the silicon dioxide layer 5 of silicon chip 4 both sides and constitutes.
In the present embodiment, described piezoelectric cantilever 2 and mass 3 realize pasting especially by epoxy resin.
In the present embodiment, described mass 3 is nickel metal derby or tungsten metal derby.
Being preferably carried out mode as one, the thickness of described substrate 6 substrate 6 is 5-100um.
Being preferably carried out mode as one, described piezoelectric thin film layer 7 is piezoceramics film, the thickness of piezoelectric thin film layer 7
For 5-100um.
Being preferably carried out mode as one, described piezoelectric thin film layer 7 and substrate 6 are gluing by epoxide-resin glue 9, asphalt mixtures modified by epoxy resin
The thickness of fat glue 9 is 2um.
The present embodiment also provides for the preparation method of a kind of low frequency piezoelectric type MEMS vibration energy collector, and described method includes
Following steps:
The first step, piezoelectric ceramic piece single-sided polishing, and sputter layer of metal electrode at piezoelectric ceramic piece burnishing surface
Wherein: a length of 15mm of described piezoelectric ceramic piece, width are 5mm, thickness is 400um；Described metal electrode is
Cr/Au alloy, its thickness is 0.2um.
Second step, prepares piezoelectric membrane by bonding and thining method on substrate
Wherein: described substrate refers to the metallic film being pasted onto on silicon chip；
The preparation method of described piezoelectric membrane, specifically: by single-sided polishing, the piezoelectricity that width is 5mm that sputtered electrode
Potsherd, is pasted onto on substrate by epoxy resin, then by mechanical-chemistry grinding finishing method by piezoelectric ceramic piece thickness
Being thinned to 40um, then sputtering on thinning of piezoelectric ceramic piece or evaporating a layer thickness is 0.20um Cr/Au alloying metal electricity
Pole layer, completes the making of piezoelectric membrane.
3rd step, uses micro fabrication to prepare piezoelectric cantilever
Wherein: described micro fabrication refers to: by photoetching, developing process, graphical piezoceramics film, then use
Reactive ion etching etching (RIE) SiO2Under orthogonal mask effect, SiO at litho pattern2, etch SiO2After, silicon is passed through
The method of deep silicon etching (DRIE) etches away, and finally uses microtome cutting, is cut into required piezoelectric cantilever, makes piezoelectric cantilever
One end of beam is fixed, the other end is unsettled.
4th step, uses cutting machine to cut out mass, and makes the method for sticking with glue make mass stick at piezoelectric cantilever
Free end
Described glue method, specifically: by silk screen print method, the thickness epoxide-resin glue less than 2um is coated in tungsten
On metal derby, and then make tungsten metal derby be attached to the free end of piezoelectric cantilever, the piezoelectric cantilever of tungsten metal derby will be stained with subsequently
Solidify at a temperature of 50 DEG C 1 hour, solidify 3 hours at 100 DEG C subsequently.
This method of attaching, can be high-strength at low frequency so that the combination of mass of the present invention, piezoelectric cantilever is the most firm
It is operated under degree, uses metal substrate simultaneously, substrate in vibration processes can be solved very well and with piezoelectric thin film layer, fracture occurs
Problem.
5th step, welding electric conductors.
The low frequency piezoelectric type MEMS vibration energy collector more existing MEMS piezoelectricity energy prepared by above-mentioned steps
The first natural frequency of amount harvester can be reduced to below 50hz, can effectively overcome the MEMS intrinsic frequency of piezoelectric energy collector single order
The problem that rate is high.
Above the specific embodiment of the present invention is described.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, those skilled in the art can make various deformation or amendment within the scope of the claims, this not shadow
Ring the flesh and blood of the present invention.
Claims (10)
1. a low frequency piezoelectric type MEMS vibration energy collector, it is characterised in that including: silicon fixed pedestal, piezoelectric cantilever
And mass, wherein: one end of described piezoelectric cantilever is fixed on described silicon fixed pedestal, another of described piezoelectric cantilever
Hold unsettled and fixing with described mass be connected；Described piezoelectric cantilever includes: metallic film substrate, and piezoelectric thin film layer and
Electrode layer；Wherein: piezoelectric thin film layer adheres on metallic film substrate by epoxy resin, one is sputtered on piezoelectric thin film layer surface
Layer metal electrode, obtains electrode layer, thus realizes electrode layer and the metallic film substrate mechanical series of piezoelectric thin film layer.
A kind of low frequency piezoelectric type MEMS vibrational energy just harvester, it is characterised in that described metal
Film substrate, wherein metal material is copper, phosphor bronze or beryllium-bronze.
A kind of low frequency piezoelectric type MEMS vibration energy collector, it is characterised in that described piezoelectricity is thin
Film layer is prepared by the thinning of piezoelectric thick.
A kind of low frequency piezoelectric type MEMS vibration energy collector, it is characterised in that described electrode layer
Make for Cr, Ni, NiCr alloy, Cr/Au alloy or Ti/Pt alloy.
A kind of low frequency piezoelectric type MEMS vibration energy collector, it is characterised in that described piezoelectricity hangs
Arm beam and mass realize pasting by epoxide-resin glue.
6. according to low frequency piezoelectric type MEMS vibration energy collector a kind of described in any one of claim 1-5, it is characterised in that institute
Stating mass is tungsten mass, or nickel mass.
7. according to low frequency piezoelectric type MEMS vibration energy collector a kind of described in any one of claim 1-5, it is characterised in that institute
State silicon fixed pedestal by silicon chip and to be arranged at the silicon dioxide layer of silicon chip both sides and constitute.
8. a preparation method for low frequency piezoelectric type MEMS vibration energy collector, its feature described in any one of claim 1-7
It is, comprises the steps:
The first step, piezoelectric ceramic piece single-sided polishing, and sputter layer of metal electrode at piezoelectric ceramic piece burnishing surface；
Second step, prepares piezoelectric membrane by bonding and thining method on substrate；
3rd step, uses micro fabrication to prepare piezoelectric cantilever；
4th step, cut quality block, use the method pasted to make the free end of piezoelectric cantilever paste fixing with mass.
A kind of preparation method of low frequency piezoelectric type MEMS vibration energy collector, it is characterised in that
In the first step, described metallic film substrate is pasted onto on the silicon chip of two-sided oxidation by epoxide-resin glue.
The preparation method of a kind of low frequency piezoelectric type MEMS vibration energy collector, its feature exists
In, in the 3rd step, by single-sided polishing, the piezoelectric ceramic piece that sputters or be evaporated metal electrode layer, it is pasted onto by epoxy resin
On metallic film substrate, then by mechanical-chemistry grinding finishing method, piezoelectric ceramic piece thickness is thinned to 5-100um, then
Thinning of piezoelectric ceramic piece sputter or evaporates layer of metal electrode layer, thus making piezoelectric membrane.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108061563A (en) * | 2017-11-21 | 2018-05-22 | 麒盛科技股份有限公司 | Cantilever piezoelectric film small-signal sensor |
| CN108344496A (en) * | 2018-02-06 | 2018-07-31 | 山西大学 | Piezoelectric type MEMS vector vibration transducers |
| CN109149101A (en) * | 2018-08-31 | 2019-01-04 | 迪泰（浙江）通信技术有限公司 | A kind of satellite antenna outer cover |
| CN110057391A (en) * | 2019-05-20 | 2019-07-26 | 中南大学 | A kind of device and method for testing shearing-type piezoelectric sensor senses performance |
| CN110386588A (en) * | 2018-04-19 | 2019-10-29 | 格科微电子（上海）有限公司 | A kind of implementation method of metal cantilever girder construction |
| CN111895176A (en) * | 2020-07-06 | 2020-11-06 | 西安交通大学 | Piezoelectric valve and use method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108061563A (en) * | 2017-11-21 | 2018-05-22 | 麒盛科技股份有限公司 | Cantilever piezoelectric film small-signal sensor |
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| CN109149101A (en) * | 2018-08-31 | 2019-01-04 | 迪泰（浙江）通信技术有限公司 | A kind of satellite antenna outer cover |
| CN110057391A (en) * | 2019-05-20 | 2019-07-26 | 中南大学 | A kind of device and method for testing shearing-type piezoelectric sensor senses performance |
| CN111895176A (en) * | 2020-07-06 | 2020-11-06 | 西安交通大学 | Piezoelectric valve and use method thereof |
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Application publication date: 20170104 |