CN102931340A - Wideband micro piezoelectric vibration energy collector and manufacturing method thereof - Google Patents
Wideband micro piezoelectric vibration energy collector and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a wideband micro piezoelectric vibration energy collector and a manufacturing method thereof. The wideband micro piezoelectric vibration energy collector comprises a fixed bracket, a mass block and cantilever beam arrays, wherein each cantilever beam array is provided with a piezoelectric layer and is arranged on the fixed bracket; the mass block is arranged on the cantilever array and is positioned at the center of the fixed bracket; the cantilever beam array comprises a plurality of cantilever beam groups; the cantilever beam groups are connected between the mass block and the fixed bracket; an upper electrode and a lower electrode are arranged on the fixed bracket and are respectively connected with the cantilever beam groups; and the cantilever beam arrays are in a symmetrical distribution state. The plurality of groups of cantilever beam arrays provided by the invention are different in inherent frequency, and thus the micro piezoelectric vibration energy collector has wider frequency bandwidth; the cantilever beams in the groups have the same size and same inherent frequency, so that the micro piezoelectric vibration energy collector can realize a parallel or serial connecting structure between generators formed by different cantilever beams according to load conditions.
Description
Technical field
The invention belongs to the renewable resource field, particularly a kind of little energy source device that ambient vibration can be converted to electric energy.
Background technology
The micro piezoelectric vibration energy gatherer is to utilize piezoelectric effect, when the micro-structural forced vibration, ambient vibration can be converted to electric energy, thereby realize the device to load supplying, have that volume is little, the life-span long, easy of integration and with the advantages such as IC process compatible, become present self energizing radio sensing network in the urgent need to ideal source, also be one of focus of current international little energy field research.
Derive as can be known according to theory, but and if only if the natural frequency of miniature piezoelectric oscillatory type energy harvester is when equating with the vibration frequency of environment, be that miniature piezoelectric oscillatory type energy harvester is when reaching resonance condition, miniature piezoelectric oscillatory type energy harvester has maximum power output, in case and miniature piezoelectric oscillatory type energy harvester vibration frequency has departed from the ambient vibration frequency, the power output of miniature piezoelectric oscillatory type energy harvester will sharply descend.For this reason, the natural frequency of miniature piezoelectric oscillatory type energy harvester must be complementary with the vibration frequency of environment.And general vibration environment external condition is complicated, and it vibrates flat frequency and mostly is the combined type frequency, has wider vibration frequency band.For this reason, miniature piezoelectric oscillatory type energy harvester must have wider frequency band range, just can obtain more ambient vibration energy.At present the domestic and international miniature piezoelectric oscillatory type energy harvester of developing causes it that efficient that ambient vibration can be converted to electric energy is lower mostly owing to frequency bandwidth is narrower, power output is less, is difficult to satisfy the energy supply demand of the practical application objects such as radio sensing network node.Therefore, the miniature piezoelectric oscillatory type energy harvester of carrying out based on microelectromechanical systems (MEMS) technology has great importance.
Summary of the invention
In view of this, technical problem to be solved by this invention provide a kind of can effective acquisition ambient vibration energy under the wide-band vibration environment, and be converted into the miniature piezoelectric oscillatory type energy harvester of electric energy.
One of purpose of the present invention provides a kind of broadband micro piezoelectric vibration energy gatherer; Two of purpose of the present invention provides a kind of manufacture method of broadband micro piezoelectric vibration energy gatherer;
One of purpose of the present invention is achieved through the following technical solutions:
Broadband micro piezoelectric vibration energy gatherer provided by the invention comprises fixed support, mass and cantilever array; Described cantilever array is provided with piezoelectric layer, and described cantilever array is arranged on the fixed support, and described mass is arranged on the cantilever array; Described mass is positioned at fixed support central authorities; Described cantilever array comprises a plurality of cantilever beam groups, and described cantilever beam group one end is connected soon with quality, and the other end is connected with fixed support, is provided with top electrode and bottom electrode on the described fixed support, and described top electrode, bottom electrode are connected with the cantilever beam group respectively; Described top electrode, piezoelectric layer and bottom electrode are sandwich structure, and piezoelectric layer is clipped between the upper and lower electrode as functional layer film.
Further, described cantilever array is symmetric state.
Further, described cantilever beam group is the different cantilever beam of size, and the cantilever beam in the described same group cantilever beam group is identical size cantilever beam.
Further, described cantilever beam with same size passes through the cascade system link of electrode serial or parallel connection at the resonance point place.
Further, described fixed support is rectangle, square, circle or oval-shaped symmetrical frame type support.
Further, described mass is rectangle, square, circle or oval.
Further, described fixed support comprises that base, lower electrode layer are drawn solder joint, upper electrode layer is drawn solder joint; Described cantilever beam upwards be provided with successively the first piezoelectric thin film layer as Seed Layer and the second piezoelectric thin film layer as the function film layer, be provided with lower electrode layer between described the first piezoelectric thin film layer and the second piezoelectric thin film layer, described the second piezoelectric thin film layer outer surface is provided with upper electrode layer.
Further, described base comprises SOI substrate, top layer silicon oxide layer; Sandwich establishment silicon oxide layer in the described SOI substrate, described silicon oxide layer upper surface is provided with silicon layer, and described silicon layer upper surface is provided with the top layer silicon oxide layer.
Two of purpose of the present invention is achieved through the following technical solutions:
The method of making broadband micro piezoelectric vibration energy gatherer provided by the invention may further comprise the steps:
S1: take the SOI substrate as substrate, thermal oxidation generates the top layer silicon oxide layer;
S2: adopt the mode of DC pulse magnetron sputtering to grow into successively the first piezoelectric thin film layer, lower electrode layer and the second piezoelectric thin film layer at top layer silicon oxide layer upper surface, then photoetching and graphical;
S3: adopt the mode of DC pulse magnetron sputtering to grow upper electrode layer at the second piezoelectric thin film layer outer surface, then photoetching and graphical;
S4: the front Coating glue protect is also graphical, adopts BHF corrosion top layer Si O
2Layer; Adopt DRIE to be etched to the SiO of SOI substrate
2Layer is located, and corrodes the SiO of interlayer with BHF
2Layer;
S5: adopt the mode of DC pulse magnetron sputtering at SOI substrate back growth masking layer, then adopt DRIE to be etched to behind the photolithography patterning and penetrate, form cantilever beam and mass.
Further, described SOI substrate is that thickness is the SOI base material of 500um, and described interlayer silicon oxide layer thickness is 1 not have um, and described SOI substrate top silicon layer thickness is about 50-70um; Described bottom electrode is that thickness is the Mo layer of 200-250nm; Described upper electrode layer is that thickness is the Al layer of 800-1000 nm.
The invention has the advantages that:
1. the cantilever array of many groups different size of proposing of the present invention, group is not identical with the natural frequency of organizing, thereby so that described miniature piezoelectric oscillatory type energy harvester has wider frequency bandwidth;
2. the cantilever array of many groups different size of proposing of the present invention, cantilever beam in every group all has identical size, thereby all have identical natural frequency, so that described miniature piezoelectric oscillatory type energy harvester can be realized parallel connection or connect in series structure between the generator that different cantilever beams consist of according to loading condition;
3. its piezoelectric of miniature piezoelectric oscillatory type energy harvester proposed by the invention can adopt aluminum nitride piezoelectric film material or other piezoelectric membranes with the integrated circuit compatibility;
4. proposed by the invention have energy harvesters that many group cantilever array consist of, the quantity of its cantilever beam can be adjusted according to the practical application needs, the shape of its mass also can design according to the volume requirement of device, as long as satisfy the otherness of size between cantilever beam group and the group;
Device architecture proposed by the invention be finish symmetrical;
6. the miniature piezoelectric oscillatory type energy harvester that proposes of the present invention has that bandwidth, frequency are low, simple in structure, the rate of finished products high, can be widely used in and radio sensing network, portable type electronic product etc., realizes that ambient vibration can be to the Efficient Conversion of electric energy.
This shows, the miniature piezoelectric oscillatory type energy harvester that the present invention proposes has higher researching value and wide market application foreground.
Description of drawings
In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention is described in further detail below in conjunction with accompanying drawing, wherein:
Fig. 1 is broadband micro piezoelectric vibration energy collector structure schematic diagram of the present invention;
Fig. 2 is broadband micro piezoelectric vibration energy gatherer process flow diagram.
Among the figure, 1 expression SiO
2Layer, 2 expression Si layers, 3 expression Al layers, 4 expression AlN layers, 5 expression Mo layers.
Embodiment
Below with reference to accompanying drawing, the preferred embodiments of the present invention are described in detail; Should be appreciated that preferred embodiment only for the present invention is described, rather than in order to limit protection scope of the present invention.
Fig. 1 is broadband micro piezoelectric vibration energy collector structure schematic diagram of the present invention; Fig. 2 is broadband micro piezoelectric vibration energy gatherer process flow diagram, and as shown in the figure: broadband micro piezoelectric vibration energy gatherer provided by the invention comprises fixed support, mass and cantilever array; Described cantilever array is provided with piezoelectric layer, and described cantilever array is arranged on the fixed support, and described mass is arranged on the cantilever array; Described mass is positioned at fixed support central authorities; Described cantilever array comprises a plurality of cantilever beam groups, and described cantilever beam group one end is connected soon with quality, and the other end is connected with fixed support, is provided with top electrode and bottom electrode on the described fixed support, and described top electrode, bottom electrode are connected with the cantilever beam group respectively; Described top electrode, piezoelectric layer and bottom electrode are sandwich structure, and piezoelectric layer is clipped between the upper and lower electrode as functional layer film.
Described cantilever array is symmetric state.
Described cantilever beam group is the different cantilever beam of size, and the cantilever beam in the described same group cantilever beam group is identical size cantilever beam.
Described cantilever beam with same size passes through the cascade system link of electrode serial or parallel connection at the resonance point place.
Described fixed support is rectangle, square, circle or oval-shaped symmetrical frame type support.
Described mass is rectangle, square, circle or oval.
Described fixed support comprises base, top layer silicon oxide layer; Described base upwards is provided with the first piezoelectric thin film layer (Seed Layer) and the second piezoelectric thin film layer (function film layer) successively, be provided with lower electrode layer between described the first piezoelectric thin film layer and the second piezoelectric thin film layer, described the second piezoelectric thin film layer outer surface is provided with upper electrode layer.
Described base comprises that SOI substrate, lower electrode layer are drawn solder joint, upper electrode layer is drawn solder joint, top layer silicon oxide layer; Be provided as the silicon dioxide layer of interlayer on the described SOI substrate, described interlayer silicon oxide layer upper surface is provided with the top layer silicon oxide layer, and described top layer silicon oxide layer upper surface arranges the first piezoelectric thin film layer.
The embodiment of the invention also provides a kind of manufacture method of broadband micro piezoelectric vibration energy gatherer, may further comprise the steps:
S1: take the SOI substrate as substrate, thermal oxide growth top layer silicon oxide layer;
S2: adopt the mode of DC pulse magnetron sputtering to grow into successively the first piezoelectric thin film layer (Seed Layer), lower electrode layer and the second piezoelectric thin film layer (function film layer) at top layer silicon oxide layer upper surface, then photoetching and graphical;
S3: adopt the mode of DC pulse magnetron sputtering to grow upper electrode layer at the second piezoelectric thin film layer outer surface, then photoetching and graphical;
S4: the front Coating glue protect is also graphical, adopts BHF corrosion top layer Si O
2Layer; Be etched to the SiO of SOI substrate
2Layer is located, and corrodes the SiO of interlayer with BHF
2Layer; The SiO of this SOI substrate
2Layer adopts the RIE etching after also can carrying out in the S5 step;
S5: adopt the mode of DC pulse magnetron sputtering at SOI substrate back growth masking layer, then adopt DRIE to be etched to behind the photolithography patterning and penetrate, form mass and cantilever beam.
Described SOI substrate is that thickness is the SOI base material of 500um, and described interlayer silicon oxide layer thickness is 1um, and silicon layer thickness is about 50-70um above the described interlayer silicon oxide layer; Described bottom electrode is that thickness is the Mo layer of 200-250nm; Described upper electrode layer is that thickness is the Al layer of 800-1000 nm.
The difference of the present embodiment and embodiment 1 only is:
As shown in Figure 1, broadband micro piezoelectric vibration energy gatherer of the present invention is realized the preparation of device take the SOI substrate as backing material by the MEMS processing technology, S represents fixed support among the figure, m represents mass, cantilever array represents with Li, and wherein the i value is 1,2 ... 16, top electrode LiT (the i=1 that each cantilever beam is corresponding, 2 ... 16), bottom electrode LiB (i=1,2 ... 16), electrode be positioned at fixed support S around.Whole device is the full symmetric structure.According to its technological process such as Fig. 2, among the figure, comprise SiO
2 Layer 1, Si layer 2, Al layer 3, AlN layer 4 and Mo layer 5, embodiment is as described below:
(1) adopt gross thickness be the SOI substrate of 500um as base material, be 50-70um as the Si layer thickness of top layer silicon, be SiO as the silicon dioxide layer of interlayer
2Layer thickness is about 1um.After adopting the standard technology cleaning, drying, thermal oxide growth is the thick SiO of 300nm approximately
2Layer is shown in Fig. 2 (a);
(2) adopt the mode of the DC pulse magnetron sputtering piezoelectric membrane AlN layer of growing.Wherein piezoelectric layer comprises: as the AlN layer of Seed Layer, thickness is about 20-25nm; Bottom electrode Mo, thickness is about 200-250nm; The function film layer, thickness is about 1.0-1.2um; Photoetching is also graphical rear shown in Fig. 2 (b);
(3) adopt the mode of DC pulse magnetron sputtering to grow as the Al layer of top electrode, its thickness is about 800-1000 nm, and photoetching is also graphical rear shown in Fig. 2 (c);
(4) front Coating glue protect and graphical adopts BHF corrosion top layer Si O
2Layer; With deep-reactive iron etch(DRIE) be etched to the SiO of SOI substrate
2Layer is located, and corrodes the SiO of interlayer with BHF
2Layer; Shown in Fig. 2 (d);
(5) mode that adopts the DC pulse magnetron sputtering is at substrate back growth Al layer, and as masking layer, its thickness is about 100nm; Adopt DRIE to be etched to behind the photolithography patterning and penetrate, form mass and cantilever beam.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. broadband micro piezoelectric vibration energy gatherer is characterized in that: comprise fixed support, mass and cantilever array; Described cantilever array is provided with piezoelectric layer, and described cantilever array is arranged on the fixed support, and described mass is arranged on the cantilever array; Described mass is positioned at fixed support central authorities; Described cantilever array comprises a plurality of cantilever beam groups, and described cantilever beam group one end is connected soon with quality, and the other end is connected with fixed support, is provided with top electrode and bottom electrode on the described fixed support, and described top electrode, bottom electrode are connected with the cantilever beam group respectively; Described top electrode, piezoelectric layer and bottom electrode are sandwich structure, and piezoelectric layer is clipped between the upper and lower electrode as functional layer film.
2. broadband micro piezoelectric vibration energy gatherer according to claim 1, it is characterized in that: described cantilever array is symmetric state.
3. broadband micro piezoelectric vibration energy gatherer according to claim 2, it is characterized in that: described cantilever beam group is the different cantilever beam of size, the cantilever beam in the described same group cantilever beam group is identical size cantilever beam.
4. broadband micro piezoelectric vibration energy gatherer according to claim 3 is characterized in that: the cascade system by the electrode serial or parallel connection connects described cantilever beam with same size at the resonance point place.
5. broadband micro piezoelectric vibration energy gatherer according to claim 1, it is characterized in that: described fixed support is rectangle, square, circle or oval-shaped symmetrical frame type support.
6. broadband micro piezoelectric vibration energy gatherer according to claim 1, it is characterized in that: described mass is rectangle, square, circle or oval.
7. broadband micro piezoelectric vibration energy gatherer according to claim 1, it is characterized in that: described fixed support comprises that base, lower electrode layer are drawn solder joint, upper electrode layer is drawn solder joint; Described cantilever beam upwards is provided with insulating barrier lower electrode layer, piezoelectric thin film layer and upper electrode layer successively.
8. broadband micro piezoelectric vibration energy gatherer according to claim 7, it is characterized in that: described base comprises SOI substrate, top layer silicon oxide layer; Described top layer silicon oxide layer upper surface arranges the first piezoelectric thin film layer as Seed Layer; On the described Seed Layer lower electrode layer is set; The second piezoelectric thin film layer is set as the function film layer on the described lower electrode layer; On described the second piezoelectric thin film layer top electrode is set.
9. make the method for broadband micro piezoelectric vibration energy gatherer as claimed in claim 1, it is characterized in that: may further comprise the steps:
S1: take the SOI substrate as substrate, thermal oxide growth top layer silicon oxide layer;
S2: top layer silicon oxide layer upper surface adopt the mode of DC pulse magnetron sputtering grow into successively the first piezoelectric thin film layer as Seed Layer, lower electrode layer and the second piezoelectric thin film layer as the function film layer, then photoetching and graphical;
S3: adopt the mode of DC pulse magnetron sputtering to grow upper electrode layer at the second piezoelectric thin film layer outer surface, then photoetching and graphical;
S4: the front Coating glue protect is also graphical, adopts BHF corrosion top layer Si O
2Layer; Adopt DRIE to be etched to the SiO of SOI substrate
2Layer is located, and corrodes the SiO of interlayer with BHF
2Layer;
S5: adopt the mode of DC pulse magnetron sputtering at SOI substrate back growth masking layer, then adopt DRIE to be etched to behind the photolithography patterning and penetrate, form cantilever beam and mass.
10. the manufacture method of broadband micro piezoelectric vibration energy gatherer according to claim 9, it is characterized in that: described SOI substrate is that thickness is the SOI base material of 500um, the top layer silicon Si layer thickness that arranges on the described SOI substrate is 50-70um, and the interlayer silicon oxide layer thickness that arranges on the described SOI substrate is about 1um; Described lower electrode layer is that thickness is the Mo layer of 200-250nm; Described upper electrode layer is that thickness is the Al layer of 800-1000 nm.
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| CN103647475A (en) * | 2013-12-16 | 2014-03-19 | 厦门大学 | Wideband piezoelectric vibration energy collecting device |
| CN103825493A (en) * | 2014-02-20 | 2014-05-28 | 东南大学 | Opened composite beam vibrational energy self-powered microsensor in radio frequency receiving and transmitting assembly of Internet of Things |
| CN104821745A (en) * | 2015-05-29 | 2015-08-05 | 重庆大学 | Low-frequency piezoelectric vibration energy collector based on Helmholtz effect and manufacture process thereof |
| CN105262371A (en) * | 2015-10-29 | 2016-01-20 | 苏州工业园区纳米产业技术研究院有限公司 | Broadband piezoelectric type MEMS vibration energy collector |
| CN107707155A (en) * | 2017-11-17 | 2018-02-16 | 西安电子科技大学 | A kind of ultra wide band high energy efficiency device for collecting piezoelectric vibration energy |
| CN108418468A (en) * | 2018-03-12 | 2018-08-17 | 佛山市顺德区中山大学研究院 | A kind of low frequency piezoelectric type vibration energy collecting device |
| CN108448937A (en) * | 2018-05-02 | 2018-08-24 | 南京邮电大学 | A kind of double track circular arc type piezoelectric type energy collector |
| CN112751505A (en) * | 2020-12-31 | 2021-05-04 | 山西大学 | Multi-direction wide band vibration energy collector based on square girder alternately |
| CN112787545A (en) * | 2020-12-31 | 2021-05-11 | 山西大学 | Vibration pickup structure of vertical-crossing multi-direction broadband piezoelectric vibration energy collector |
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| CN108448937A (en) * | 2018-05-02 | 2018-08-24 | 南京邮电大学 | A kind of double track circular arc type piezoelectric type energy collector |
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| CN112751505A (en) * | 2020-12-31 | 2021-05-04 | 山西大学 | Multi-direction wide band vibration energy collector based on square girder alternately |
| CN112787545A (en) * | 2020-12-31 | 2021-05-11 | 山西大学 | Vibration pickup structure of vertical-crossing multi-direction broadband piezoelectric vibration energy collector |
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