CN105186922B - Piezoelectricity friction replies box-like MEMS widebands energy collecting device and preparation method thereof by cable - Google Patents
Piezoelectricity friction replies box-like MEMS widebands energy collecting device and preparation method thereof by cable Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/04—Friction generators
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/18—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
- H02N2/183—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators using impacting bodies
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/22—Methods relating to manufacturing, e.g. assembling, calibration
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Abstract
A kind of piezoelectricity friction replies box-like MEMS widebands energy collecting device and preparation method thereof by cable, and the collector includes piezoelectric energy collector main structure, stopper and pad；Piezoelectric energy collector main structure includes silicon fixed pedestal, silicon based piezoelectricity cantilever beam and mass；Silicon fixed pedestal includes the silicon dioxide layer of silicon layer and its both sides；Silicon based piezoelectricity cantilever beam includes silicon cantilever supporting layer and the layer of piezoelectric thick thereon；Silicon cantilever supporting layer includes silicon layer, silicon dioxide layer and supporting layer electrode layer；Piezoelectric thick layer includes the piezoelectric thick electrode layer on piezoelectric thick and its surface；Mass includes the frictional layer on integrated silicon mass and its surface；Stopper includes frictional layer pedestal, electrode layer and frictional layer；Pad is located between silicon fixed pedestal and stopper.The present invention makes inverting element that larger power output is obtained under low-frequency vibration environment, to solve the problems such as traditional MEMS piezoelectric energy collector power outputs are low, frequency band is narrow.
Description
Technical field
The invention belongs to micro- energy technology field, and in particular to a kind of piezoelectricity-friction is replied box-like MEMS widebands energy by cable and adopted
Storage and preparation method thereof.
Background technology
Wireless sensor network (Wireless Sensor Network, abbreviation WSN) is by inexpensive, intensive, random
The small node for being integrated with sensor, data processing unit and short-range wireless communication module of distribution is made up of Ad hoc mode
Network.Place surrounding enviroment signal is perceived, gathered and monitored by various informative sensor built-in in node,
It is final to realize comprehensive monitoring with control the physical world that we live.Low-power consumption, the wireless sensor node of small volume
It is the element of WSN, is generally powered by general chemistry battery.But, it is contemplated that the self-contained electricity of these sensors
Pond energy life time is limited and large number of, and may be installed on (such as structural health inspection of the inaccessible application scenarios of some mankind
Survey, medical implantable device etc.) so that it is periodic replacement battery, recharged extremely difficult or even cannot realize.
At present, ambient vibration energy acquisition technology particularly piezoelectric type energy collector is to solve problem above to have efficacious prescriptions
One of method.But, the micro-vibration energy collecting device developed outside Current Domestic is concentrated mainly on single transformation mechanism, that is, design
Structure be based only on a kind of prisoner can mechanism, this greatly limits the energy acquisition conversion efficiency of device, make it be difficult to provide foot
Enough energy high are powered for wireless sensor network node.Therefore, the energy conversion efficiency of device and defeated how is improved
It is the key issue that micro piezoelectric vibration energy amount collector is used practically to go out performance, is also the heat of research and concern at present
Point.The transformation mechanism of piezoelectricity and electromagnetism, electrostatic or other forms is integrated by futuramic structure while carrying out
Combined type energy acquisition is a kind of effective ways for improving vibrational energy conversion efficiency.However, so far on combined type energy
Research in terms of amount collector is still extremely limited, because two kinds of energy conversion machine systems are integrated in same device will face more
Big challenge.This device contains more function and structure layers, how to realize each function and structure layer phase in preparation process
Mutually compatibility is it is critical that problem.
Find by prior art documents, Bin Yang, Chengkuo Lee etc. exists《Journal of
Micro-Nanolithography MEMS and MOEMS》9 (2010) write articles " Hybrid energy harvester
Based on piezoelectric and electromagnetic mechanisms " (" adopt by piezoelectric-electrcombinedc combinedc energy
Storage "《Micro-nano photoetching MEMS and MOEMS periodicals》).The combined type energy collecting device being mentioned in this article, piezoelectric mechanism and electricity
Magnetomechanical peak power output is respectively 176 μ W and 0.19 μ W, the contribution due to electromagnetism and electric capacity conversion regime to coupling mechanism
Less, the efficiency of energy acquisition is still relatively low, and there are problems that prepared by complex structure, MEMS technology.Xingzhao Wang
Deng《The 28th IEEE International Conference on Micro Electro Mechanical
Systems》(2015) " Flexible triboelectric and piezoelectric coupling are write articles
Nanogenerator based on electrospinning P (VDF-TRFE) Nanowires " (" is based on electrostatic spinning P
(VDF-TRFE) the flexible friction electricity of nano wire-Piezoelectric anisotropy nano energy collector "《28th MEMS world meeting
View》).Formed by lamination packaging technology with friction microstructure using flexibility PVDF piezoelectrics in text, PVDF relatively low piezoelectricity
Performance limits the output of device, and lamination packaging technology be difficult to MEMS technology it is compatible, so as to cause device larger, practicality
It is not strong.
The content of the invention
It is the defect of solution prior art that one of the object of the invention is, there is provided it is box-like that a kind of piezoelectricity-friction is replied by cable
MEMS wideband energy collecting devices and preparation method thereof, make inverting element that larger power output is obtained under low-frequency vibration environment,
To solve the problems such as traditional MEMS piezoelectric energy collector power outputs are low, frequency band is narrow.
Box-like MEMS widebands energy collecting device is replied in a kind of piezoelectricity-friction that the present invention is provided by cable to be included：Piezoelectric energy is gathered
Device main structure, stopper and pad；
The piezoelectric energy collector main structure includes：Silicon fixed pedestal, the first silicon based piezoelectricity cantilever beam, the second silicon substrate pressure
Electric cantilever beam, the first mass and the second mass；
The silicon fixed pedestal includes：First silicon layer and the silicon dioxide layer positioned at the first silicon layer both sides；
First silicon based piezoelectricity cantilever beam and the second silicon based piezoelectricity cantilever beam all include：Silicon cantilever supporting layer and invest
Piezoelectric thick layer on the silicon cantilever supporting layer；The silicon cantilever supporting layer includes the second silicon layer, second silicon layer
Supporting layer electrode layer in the silicon dioxide layer on upper and lower surface and the second silicon layer upper surface silicon dioxide layer；The piezoelectricity
Thick film layers include the electrode layer of piezoelectric thick and piezoelectricity thickness thick film surface；
First mass and the second mass block structure are identical, including：Integrated silicon mass and invest rubbing for its surface
Wipe layer；
The stopper includes：Frictional layer pedestal, electrode layer and frictional layer；
The pad is located between the silicon fixed pedestal and stopper.
Further, fluting in the middle of first silicon based piezoelectricity cantilever beam, second silicon based piezoelectricity cantilever beam is located at institute
State in fluting；Described first silicon based piezoelectricity cantilever beam one end is fixed on the silicon fixed pedestal, and the other end is oneself hanging
It is fixedly connected by end and with first mass, the fixing end of second silicon based piezoelectricity cantilever beam is the first silicon substrate pressure
The free end of electric cantilever beam, and the other end is hanging and is fixedly connected with second mass.
Further, first silicon based piezoelectricity cantilever beam and the second silicon based piezoelectricity cantilever beam are shaped as rectangle or trapezoidal.
Further, the material of the piezoelectric thick is PZT ceramics or PMNT piezoelectric monocrystals.
Further, the piezoelectric thick electrode layer and supporting layer electrode layer by Al, Ag, CrAu alloy or TiPt alloys its
In one kind be made.
Further, the piezoelectric thick layer is realized pasting and is bonded with silicon cantilever supporting layer by adhesive.
Further, the adhesive is conductive epoxy resin.
Further, the electrode layer on described stopper is made up of CrAu alloys.
Further, the frictional layer of the mass is that SU8 glue microtrabeculae or silicon of the surface with CrAu alloy electrode layers are micro-
Hole structure, the frictional layer of corresponding stopper is PI films or PDMS film；Or,
Mass frictional layer is PI or PDMS film, and corresponding stopper frictional layer is that surface has CrAu alloy electrode layers
SU8 glue microtrabeculae or silicon dimple structure.
Box-like MEMS widebands energy collecting device preparation method is replied by cable present invention also offers a kind of piezoelectricity-friction, including such as
Lower step：
S1：Piezoelectric thick is prepared on silicon chip using bonding and thinning technique, and it is thick to make the piezoelectricity on piezoelectric thick surface
Membrane electrode layer；
The silicon chip refers to the soi wafer of upper and lower surface twin polishing and surface thermal oxide layer of silicon dioxide.
Described utilizing is bonded the step of preparing piezoelectric thick with thinning technique, specifically includes：By the piezoelectricity of single-sided polishing
Body material is combined by epoxy bonding techniques with the silicon chip, or in the piezoelectrics material burnishing surface and silicon chip surface deposition one
After layer electrode layer, the piezoelectrics material is combined with the silicon chip by eutectic bonding technology；Then by mechanical lapping, polishing
The thinning piezoelectrics material of method, prepares the piezoelectric thick that thickness is 10 μm -30 μm；
It is described to make concretely comprising the following steps for the piezoelectric thick electrode layer that the upper and lower surface of piezoelectric thick covers：Using first depositing
Described piezoelectric thick electrode layer is obtained using the method for ion beam milling etched features polarizing electrode afterwards；
S2：The front of piezoelectric energy collector main structure is processed using micro fabrication, the micro fabrication includes：Light
Carve, develop, wet method SiO2 etchings, piezoelectric thick are etched and silicon bulk fabrication；
S3：Frictional layer is prepared at the back of the piezoelectric energy collector main structure, following steps are specifically included：
One layer of electrode layer is first deposited in the back silicon dioxide layer of the piezoelectric energy collector main structure, then at this
Electrode layer prepares microtrabeculae frictional layer using SU8 adhesive process, and one layer of electrode layer is deposited on microtrabeculae frictional layer；
Or, prepare silicon dimple structure using machine cuts and with reference to wet method silicon etching method and deposit one on this structure
Layer electrode layer；
Or, one layer of PDMS or PI film is prepared using whirl coating method；
S4：Micro Process is carried out at the back of the piezoelectric energy collector main structure, silicon based piezoelectricity cantilever beam is discharged, specifically
Comprise the following steps：
First using wet etching or the graphical back electrode layer of dry etching method and silica, then using DRIE depths
Silicon etching, to discharge silicon based piezoelectricity cantilever beam.
S5：Prepare and stop block structure, specifically include following steps：
One layer of electrode is deposited on the ordinary silicon substrates of surface thermal oxide layer of silicon dioxide using sputtering, whirl coating method
Layer, then makes one layer of PDMS or PI film on the electrode layer；
Or, microtrabeculae frictional layer is prepared using SU8 adhesive process and one layer of electrode layer is deposited in the above；
Or, prepare silicon dimple structure and in the above one layer of deposition using machine cuts and with reference to wet method silicon etching method
Electrode layer.
S6：Assembly device, welding electric conductors, polarized piezoelectric piece；
The step of assembly device, includes：The piezoelectric energy collector main structure is passed through using epoxy bonding method
Pad is connected on stopper.
The beneficial effects of the present invention are the present invention is two kinds of transducings of integrated piezoelectric and friction using novel working mechanism
The combined vibrating energy collecting device of mode, solves traditional single transducing mode and has that energy acquisition efficiency is low, power output is small
The problems such as；Widen the frequency band range of device simultaneously using two-freedom (mode) and the non-linear two ways of collision type, break through single
One frequency band widens the limitation of method, realizes the broadband collection of vibrational energy and changes；Prepared by high performance piezoelectric thick film, rubbed
While the MEMS technology of the key technologies such as microstructure graph Integrated manufacture and correlation is wiped by device miniaturization, mass, carry
Output performance that is high and improving MEMS energy collecting devices.The present invention will fundamentally overcome existing micro-vibration energy collecting device to deposit
Energy conversion efficiency is low, frequency band is narrow, output performance cannot meet the shortcoming of practical application, for solving wireless sensor network
The long-term energy supply problem of node, realizes the micro element system of self energizing, and advances its extensive use to be with a wide range of applications.
Brief description of the drawings
Fig. 1 is the texture edge schematic diagram of the embodiment of the present invention 1；
Fig. 2 is the piezoelectric energy collector main structure front schematic view of the embodiment of the present invention 1；
Fig. 3 is the texture edge schematic diagram of the embodiment of the present invention 2；
Fig. 4 is the piezoelectric energy collector main structure front schematic view of the embodiment of the present invention 2；
In figure:1. the piezoelectric thick electrode layer 6. of 2. silicon dioxide layer of silicon layer, 3. 4. second silicon layer of piezoelectric thick 5. glues
The frictional layer pedestal of 10. stopper electrode layer of sticking adhesive layer 7. integrated silicon, 8. microtrabeculae friction structure, 9. friction structure electrode layer 11.
The micro- hole supporting layer electrode layer of frictional layer 16. of pad 14.P1 15. silicon of friction structure of 12. stopper frictional layer 13..
Specific embodiment
The present invention is described in detail below in conjunction with specific embodiment.It should be noted that the skill described in following embodiments
The combination of art feature or technical characteristic be not construed as it is isolated, they can be mutually combined so as to reach preferably
Technique effect.
Box-like MEMS widebands energy collecting device is replied in a kind of piezoelectricity-friction that the present invention is provided by cable includes piezoelectric energy collector
Main structure, stopper and pad (13)；
Piezoelectric energy collector main structure includes：Silicon fixed pedestal, the first silicon based piezoelectricity cantilever beam, the second silicon based piezoelectricity hang
Arm beam, the first mass and the second mass；
Silicon fixed pedestal includes：First silicon layer (1) and its silicon dioxide layer (2) of both sides；
First silicon based piezoelectricity cantilever beam and the second silicon based piezoelectricity cantilever beam all include：Silicon cantilever supporting layer and invest silicon hang
Piezoelectric thick layer on arm beam supporting layer；Silicon cantilever supporting layer includes the second silicon layer (4), the second silicon layer (4) upper and lower surface
Supporting layer electrode layer (16) in the silicon dioxide layer (2) of silicon dioxide layer (2) and the second silicon layer (4) upper surface；Piezoelectric thick
Layer includes the piezoelectric thick electrode layer (5) on piezoelectric thick (3) and its surface；
First mass and the second mass block structure are identical, including：Integrated silicon mass and invest the frictional layer on its surface；
Stopper includes：Frictional layer pedestal (11), electrode layer and frictional layer；
Pad (13) is between silicon fixed pedestal and stopper.
Further, fluting in the middle of the first silicon based piezoelectricity cantilever beam, the second silicon based piezoelectricity cantilever beam is located in fluting；First
Silicon based piezoelectricity cantilever beam one end is fixed on silicon fixed pedestal, and the other end is hanging free end and is fixed with the first mass
Connection, the fixing end of the second silicon based piezoelectricity cantilever beam is the free end of the first silicon based piezoelectricity cantilever beam, and the other end it is hanging and with
Second mass is fixedly connected.
Further, the first silicon based piezoelectricity cantilever beam and the second silicon based piezoelectricity cantilever beam are shaped as rectangle or trapezoidal.
Further, the material of piezoelectric thick (3) is PZT ceramics or PMNT piezoelectric monocrystals.
Further, piezoelectric thick electrode layer (5) and supporting layer electrode layer (16) are closed by Al, Ag, CrAu alloy or TiPt
Gold one kind therein is made.
Further, piezoelectric thick layer is realized pasting and is bonded with silicon cantilever supporting layer by adhesive (6).
Further, adhesive (6) is conductive epoxy resin.
Further, the electrode layer on stopper is made up of CrAu alloys.
Further, the frictional layer on mass is SU8 glue microtrabeculae or silicon micro- hole of the surface with CrAu alloy electrode layers
Structure, the frictional layer of corresponding stopper is PI films or PDMS film；Or,
Frictional layer on mass is PI or PDMS film, and the frictional layer of corresponding stopper is that surface has CrAu alloys
The SU8 glue microtrabeculae or silicon dimple structure of electrode layer.
Box-like MEMS widebands energy collecting device preparation method is replied by cable present invention also offers a kind of piezoelectricity-friction, including such as
Lower step：
S1：Piezoelectric thick layer is prepared on silicon chip using bonding and thinning technique, and makes the pressure on piezoelectric thick (3) surface
Electric thick membrane electrode layer (5)；
The silicon chip refers to the soi wafer of upper and lower surface twin polishing and surface thermal oxide layer of silicon dioxide.
The step of preparing piezoelectric thick layer using bonding and thinning technique, specifically includes：By the piezoelectrics material of single-sided polishing
Combined with silicon chip by epoxy bonding techniques, or after piezoelectrics material burnishing surface and silicon chip surface deposit one layer of electrode layer, passed through
Eutectic bonding technology is combined piezoelectrics material with silicon chip；Then by mechanical lapping, the thinning piezoelectrics material of polishing method, prepare
Thickness is 10 μm -30 μm of piezoelectric thick (3)；
Piezoelectric thick electrode layer (5) for making piezoelectric thick (3) upper and lower surface concretely comprise the following steps：After first depositing
Described piezoelectric thick electrode layer is obtained using the method for ion beam milling etched features polarizing electrode.
S2：The front of piezoelectric energy collector main structure is processed using micro fabrication, micro fabrication includes：Photoetching,
Development, wet method SiO2 etchings, piezoelectric thick etching and silicon bulk fabrication.
S3：Frictional layer is prepared at the back of piezoelectric energy collector main structure, following steps are specifically included：
One layer of electrode layer is first deposited in the back silicon dioxide layer (2) of piezoelectric energy collector main structure, then at this
Electrode layer prepares microtrabeculae frictional layer using SU8 adhesive process, and one layer of CrAu alloy electrode layers are deposited on microtrabeculae frictional layer；
Or, prepare silicon dimple structure using machine cuts and with reference to wet method silicon etching method and deposit one on this structure
Layer electrode layer；
Or, one layer of PDMS or PI film is prepared using whirl coating method；
S4：Micro Process is carried out at the back of piezoelectric energy collector main structure, silicon based piezoelectricity cantilever beam is discharged, specifically included
Following steps：
First using wet etching or the graphical back electrode layer of dry etching method and silica, then using DRIE depths
Silicon etching, to discharge silicon based piezoelectricity cantilever beam.
S5：Prepare and stop block structure, specifically include following steps：
One layer of electrode is deposited on the ordinary silicon substrates of surface thermal oxide layer of silicon dioxide using sputtering, whirl coating method
Layer, then makes one layer of PDMS or PI film on electrode layer；
Or, microtrabeculae frictional layer is prepared using SU8 adhesive process and one layer of electrode layer is deposited in the above；
Or, prepare silicon dimple structure and in the above one layer of deposition using machine cuts and with reference to wet method silicon etching method
Electrode layer.
S6：Assembly device, welding electric conductors, polarized piezoelectric piece；
The step of assembly device, includes：Piezoelectric energy collector main structure is passed through by pad (13) using epoxy bonding method
It is connected on stopper.
Embodiment 1
As shown in figure 1, piezoelectricity-friction replies box-like MEMS energy collecting devices by cable including piezoelectric energy collector in the present embodiment
Main structure, stopper and pad；
Piezoelectric energy collector main structure includes：Silicon fixed pedestal, 2 silicon based piezoelectricity cantilever beams and 2 masses；
Silicon fixed pedestal includes：Silicon chip (1) and the silicon dioxide layer (2) positioned at its both sides；
Silicon based piezoelectricity cantilever beam in piezoelectricity main structure includes：Silicon cantilever supporting layer and invest on silicon cantilever supporting layer
Piezoelectric thick layer；Silicon cantilever supporting layer includes the second silicon layer (4), the silicon dioxide layer on the second silicon layer (4) upper and lower surface
(2) the supporting layer electrode layer (16) and in the silicon dioxide layer (2) of the second silicon layer (4) upper surface；Piezoelectric thick layer includes piezoelectricity
Thick film (3) and its piezoelectric thick electrode layer (5) on surface；
Piezoelectric thick layer is pasted by adhesive (6) with silicon cantilever supporting layer and is bonded；Silicon based piezoelectricity cantilever beam shape
It is rectangle, its front elevation is as shown in Figure 2.
Mass includes：Integrated silicon mass and microtrabeculae frictional layer；
Integrated silicon mass includes the silicon dioxide layer (2) on integrated silicon (7) and its surface；Microtrabeculae frictional layer rubs including microtrabeculae
Wipe the friction structure electrode layer (9) on structure (8) and its surface.
Stopper includes：Stopper electrode layer (10), frictional layer pedestal (11) and stopper frictional layer (12)；Stopper electricity
Pole layer (10) is positioned at the upper surface of frictional layer pedestal (11), upper table of the stopper frictional layer (12) positioned at stopper electrode layer (10)
Face.
Piezoelectric thick is PZT thick films, and thickness is 15 μm.
The piezoelectric thick electrode layer 5 and supporting layer electrode layer (16) on the upper and lower surface of piezoelectric thick, refer to that thickness is 0.20 μm
Al film layers.
Stopper electrode layer (10) and friction structure electrode layer (9), refer to CrAu alloy firms that thickness is 0.15 μm layer；
Stopper frictional layer (12) refers to the PDMS films that thickness is 50 μm or so；
Pad (13) is positioned between silicon fixed pedestal and stopper.
The preparation method of box-like MEMS energy collecting devices is replied in above-mentioned piezoelectricity-friction that the present embodiment is related to by cable, including following
Step：
Sa1：Use that epoxy is bonded and thining method prepares the PZT thick films that thickness is for 15 μm, i.e. piezoelectric thick (3), and
Thereon, lower surface makes piezoelectric thick electrode layer (5), so as to complete the preparation of piezoelectric thick layer.
Piezoelectric thick electrode layer (5) preparation method of piezoelectric thick (3) lower surface covering includes：On the second silicon layer (4)
10 μm of positive-glue removing in the silicon dioxide layer (2) on surface, by photoetching, the graphical photoresist of developing technique, then patterned
By the Al films of 0.20 μm of vapor deposition one layer on photoresist surface, piezoelectric thick electrode layer (5) is then prepared；
Epoxy bonding techniques refer to：Silk-screen printing side is used on the piezoelectric thick electrode layer (5) prepared in above-mentioned steps
Method applies epoxy conducting, is then that 300 μm of good PZT bodies materials of single-sided polishing are pasted with thickness, applies on the PZT of laminating
Vacuum drying oven is put into after the pressure of 0.2Mpa carries out heating cure.Solidification is divided into three phases, 0.5 hour at a temperature of 1,95 DEG C；
2nd, 0.5 hour at a temperature of 135 DEG C；3rd, 2.0 hours at a temperature of 175 DEG C；
Thinning technique refers to：The PZT that will be bonded uses particle to be ground for the diamond dust of W28, W14, W7 successively, most
Use granularity to be polished for 0.5 μm of diamond polishing cream afterwards, it is thinning after PZT thickness be 15 μm.
Piezoelectric thick electrode layer (5) preparation method of piezoelectric thick (3) upper surface covering includes：First in the PZT for preparing
10 μm of positive-glue removing in thick film layers, by photoetching, the graphical photoresist of developing technique, then lead on patterned photoresist surface
The Al films of 0.20 μm of vapor deposition one layer are crossed, the piezoelectric thick electrode layer 5 of piezoelectric thick (3) upper surface covering is then prepared.
Sa2：Piezoelectric energy collector main structure front is processed using micro fabrication.
Micro fabrication includes：By the techniques such as photoetching, development, graphical PZT thick film layers, then using wet etching pressure
To expose electrode, etching liquid composition and mass ratio are (40% NH4F to electric PZT thick film layers:HF=1:5)BHF:HCl:H2O=1:
25:74.Then by photoetching, developing process, using RIE dry etching epoxy resin layers, using the silicon layer of BHF solution etches second
(4) silicon dioxide layer (2) of upper surface, the silicon dioxide layer (2) of the silicon layer of silicon second (4) to its lower surface is etched using DRIE.
Sa3：Microtrabeculae frictional layer is prepared using SU8 glue at piezoelectric energy collector main structure back, and uses Cr/Au alloys
Film makes the friction structure electrode layer (9) on stopper.
The preparation method that SU8 glue prepares microtrabeculae frictional layer includes：Preparing the piezoelectric energy collector knot of front description
Then structure back, one layer of titanium film of sputtering carry out oxidation processes to improve the combination of substrate and SU8 glue as Seed Layer to titanium film
Power, with 600 revs/min of speed SU8-500 photoresists 30 seconds on titanium film, obtains glue thickness and is about 500 μm, photoetching, development
Obtain circular mass cavity.
Friction structure electrode layer (9) method on stopper is made using Cr/Au alloy firms, refers to micro- what is prepared
On post frictional layer, one layer of CrAu alloy firm is deposited as friction structure electrode layer (9) using magnetically controlled sputter method.
Sa4：Micro Process is carried out to piezoelectric energy collector main structure back, silicon based piezoelectricity cantilever beam is discharged.
Piezoelectric energy collector main structure back micro Process, release cantilever beam method, specifically：First etched using ion beam milling
Method etches friction structure electrode layer (9), then the silicon dioxide layer using RIE etchings at the lower surface of silicon chip (1)
(2) deep silicon etching then, is carried out using DRIE, until the silicon dioxide layer (2) for being extremely located at the second silicon layer (4) lower surface is carved, most
The silicon dioxide layer (2) using RIE etchings at the second silicon layer (4) lower surface, discharges cantilever beam afterwards.
Sa5：Prepare stopper of the surface with PDMS films.
The method for preparing stopper of the surface with PDMS film frictional layers, specifically：Using ordinary silicon substrates as friction
Layer pedestal (11), first sputters one layer of stopper electrode layer (10) on its surface, finally by getting rid of on stopper electrode layer (10)
The techniques such as glue, drying make one layer of PDMS film as stopper frictional layer (12), complete to stop the making of block structure.
Sa6：Assembly device, welding electric conductors, polarized piezoelectric thick film (3).
The method of assembly device includes：Epoxide-resin glue by silk screen print method by thickness less than 2 μm is coated in silicon and fixes
On the frictional layer pedestal (11) of pedestal and corresponding stopper, the silicon chip of suitable thickness is selected as pad (13), using chip
Energy collecting device main structure and stop that block structure is fitted together that bonding techniques will be prepared, and solidify 1 at a temperature of 50 DEG C
Hour, then solidify 3 hours at a temperature of 100 DEG C.
Polarized piezoelectric thick film (3), specific steps include：Add 60V DC voltages at the electric lead two ends drawn, kept for 30 points
Clock.
Embodiment 2
As shown in figure 3, a kind of piezoelectricity-friction that the present embodiment is provided is replied box-like MEMS energy collecting devices by cable and is included：Piezoelectricity
Energy collecting device main structure, stopper and pad.
Piezoelectric energy collector main structure includes：Silicon fixed pedestal, 2 silicon based piezoelectricity cantilever beams and 2 masses；
Silicon fixed pedestal includes：Silicon chip (1) and its silicon dioxide layer (2) of both sides；
Silicon based piezoelectricity cantilever beam in piezoelectricity main structure includes：Silicon cantilever supporting layer and invest on silicon cantilever supporting layer
Piezoelectric thick layer；Silicon cantilever supporting layer includes the second silicon layer (4), the silicon dioxide layer on the second silicon layer (4) upper and lower surface
(2) the supporting layer electrode layer (16) and in the silicon dioxide layer (2) of the second silicon layer (4) upper surface；Piezoelectric thick layer includes piezoelectricity
Thick film (3) and its piezoelectric thick electrode layer (5) on surface；
Piezoelectric thick layer is pasted by adhesive (6) with silicon cantilever supporting layer and is bonded；Silicon based piezoelectricity cantilever beam shape
For trapezoidal, its front elevation is as shown in Figure 4.
Mass includes：Integrated silicon mass and PI frictional layers；Integrated silicon mass includes integrated silicon (7) and its surface
Silicon dioxide layer (2), PI frictional layers include PI friction structures (14) and its friction structure electrode layer (9)；
Stopper includes：Frictional layer pedestal (11), the silicon dioxide layer (2) for investing frictional layer pedestal (11) surface, silicon are micro-
Hole frictional layer (15) and friction structure electrode layer (9)；The friction structure electrode layer (9) is positioned at frictional layer pedestal (11) upper surface
In silicon dioxide layer (2), the micro- hole frictional layer (15) of silicon is serrated in the upper surface of embedded frictional layer pedestal (11).
Pad 13 is located between silicon fixed pedestal and stopper.
Piezoelectric thick refers to PZT thick films, and thickness is 20 μm；
Piezoelectric thick piezoelectric thick electrode layer (5) and supporting layer electrode layer (16) refer to the CrAu alloys that thickness is 0.15 μm
Film layer；
Friction structure electrode layer (9) refers to the CrAu alloy firms layer that thickness is 0.15 μm；
PI friction structures (14) refer to the PI films that thickness is 30 μm or so；
The preparation method of box-like MEMS energy collecting devices is replied in a kind of piezoelectricity-friction that the present embodiment is related to by cable, including following
Step：
Sb1：Use epoxy be bonded and thining method prepare thickness be 20 μm PZT thick film layers as piezoelectric thick layer, and
The piezoelectric thick electrode layer (5) on piezoelectric thick (3) upper and lower surface is made, the making of piezoelectric thick layer is completed.
The preparation method of the piezoelectric thick electrode layer (5) of piezoelectric thick (3) lower surface includes：In the second silicon layer (4) upper table
10 μm of positive-glue removing in the silicon dioxide layer (2) in face, by photoetching, the graphical photoresist of developing technique, then in patterned light
By the CrAu alloy firms of 0.15 μm of vapor deposition one layer on photoresist surface, the pressure of piezoelectric thick (3) lower surface is then prepared
Electric thick membrane electrode layer (5)；
Epoxy bonding techniques, specifically：On the piezoelectric thick electrode layer (5) of piezoelectric thick (3) lower surface for preparing
Epoxy conducting is applied using method for printing screen, is then that 400 μm of good PZT bodies materials of single-sided polishing are pasted with thickness, in laminating
PZT on apply the pressure of 0.2Mpa after be put into vacuum drying oven and carry out heating cure.Solidification is divided into three phases, 1,95 DEG C of temperature
Lower 0.5 hour；2nd, 0.5 hour at a temperature of 135 DEG C；3rd, 2.0 hours at a temperature of 175 DEG C.
Thinning technique, specific steps include：The thickness that will be bonded is 400 μm of PZT, use successively particle for W28,
The diamond dust of W14, W7 is ground, and finally uses granularity to be polished for 0.5 μm of diamond polishing cream, it is thinning after PZT
Thick layer is 20 μm.
The preparation method of the piezoelectric thick electrode layer (5) of piezoelectric thick (3) upper surface, specifically：First in the pressure for preparing
10 μm of positive-glue removing on electric thick film (3), by photoetching, the graphical photoresist of developing technique, then on patterned photoresist surface
The upper CrAu alloy firms by 0.15 μm of vapor deposition one layer, then prepare the piezoelectric thick electricity of piezoelectric thick (3) upper surface
Pole layer (5).
Sb2：Piezoelectric energy collector main structure front is processed using micro fabrication.
Micro fabrication, specifically：By the techniques such as photoetching, development, graphical piezoelectricity PZT thick films, then using wet method
To expose electrode, etching liquid composition and mass ratio are (40% NH4F to etching piezoelectricity PZT thick film layers:HF=1:5)BHF:HCl:
H2O=1:25:74.Then by photoetching, developing process, using RIE dry etching epoxy resin layers, using BHF solution etches
Positioned at the silicon dioxide layer (2) of the second silicon layer (4) upper surface, the second silicon layer (4) is etched to positioned at its lower surface using DRIE
Silicon dioxide layer (2).
Sb3：The PI frictional layers (14) and thereon that thickness is 30 μm or so are prepared at piezoelectric energy collector main structure back
Friction structure electrode layer (9).
The method that back prepares PI frictional layers (14) and friction structure electrode layer (9) thereon, refers to prepare front
The piezoelectric energy collector structure back of figure, it is 0.15 μm of CrAu alloy firms as friction structure first to sputter a layer thickness
Electrode layer (9) is simultaneously graphical, and 30 μm of PI films are then prepared using spin coating method as PI frictional layers (14), and using photoetching,
The graphical PI films of developing method.
Sb4：Piezoelectric energy collector main structure back micro Process, release cantilever beam.
Piezoelectric energy collector main structure back micro Process, release cantilever beam method, specifically：First with ion beam milling etching side
Method etches the friction structure electrode layer (9) on PI frictional layers (14), then using RIE etching silicon dioxides layer (8), then uses
DRIE carries out deep silicon etching, until carving to the silicon dioxide layer (2) of the second silicon layer (4) lower surface, finally using RIE etchings second
The silicon dioxide layer (2) of silicon layer (4) lower surface, discharges cantilever beam.
Sb5：Preparing surface has the stopper of silicon dimple structure.
Preparing surface has the stop block method of silicon dimple structure, and specific steps include：Rubbed the most using ordinary silicon substrates
Layer pedestal (13) is wiped, first in its surface thermal oxide layer of silicon dioxide layer (2), micro- square is first cut out using cutting technique, then
Micro- hole is etched with wet etching method and form the micro- hole frictional layer (15) of silicon, then in micro- hole frictional layer (15) surface sputtering one of silicon
Layer CrAu alloy firms complete to stop the making of block structure as friction structure electrode layer (9).
Sb6：Assembly device, welding electric conductors, polarized piezoelectric thick film (3).
Assembly device step includes：Epoxide-resin glue by silk screen print method by thickness less than 2 μm is coated in silicon fixed base
On the frictional layer pedestal (11) of seat and corresponding stopper, the silicon chip of suitable thickness is selected as pad (13), using chip key
Energy collecting device main structure and stop that block structure carries out overall package that conjunction technology will be prepared, and solidify 1 at a temperature of 50 DEG C
Hour, then solidify 3 hours at a temperature of 100 DEG C.
Polarized piezoelectric thick film (3) is specifically：At the electric lead two ends drawn, plus DC voltage 80V, kept for 30 minutes.
Box-like MEMS energy collecting devices are replied in piezoelectricity-friction prepared by the present invention by cable, can effectively improve the output characteristics of device,
With high conversion efficiency, operation bandwidth the features such as, more general piezoelectric energy collector, its conversion efficiency can improve 40% with
On, frequency range improves more than 30%, can, problem that operation frequency band narrow relatively low efficiently against MEMS energy collecting device power outputs.
Although having been presented for some embodiments of the present invention herein, it will be appreciated by those of skill in the art that
Without departing from the spirit of the invention, the embodiments herein can be changed.Above-described embodiment be it is exemplary, no
Should be using the embodiments herein as the restriction of interest field of the present invention.
Claims (9)
1. box-like MEMS widebands energy collecting device is replied in a kind of piezoelectricity-friction by cable, it is characterised in that including piezoelectric energy collector master
Structure, stopper and pad；
The piezoelectric energy collector main structure includes：Silicon fixed pedestal, the first silicon based piezoelectricity cantilever beam, the second silicon based piezoelectricity hang
Arm beam, the first mass and the second mass；
The silicon fixed pedestal includes：First silicon layer and the silicon dioxide layer positioned at the first silicon layer both sides；
First silicon based piezoelectricity cantilever beam and the second silicon based piezoelectricity cantilever beam all include：Silicon cantilever supporting layer and invest described
Piezoelectric thick layer on silicon cantilever supporting layer；The silicon cantilever supporting layer includes that the second silicon layer, second silicon layer are upper and lower
Supporting layer electrode layer in the silicon dioxide layer on surface and the second silicon layer upper surface silicon dioxide layer；The piezoelectric thick layer
Electrode layer including piezoelectric thick and the piezoelectric thick surface；
Fluting in the middle of first silicon based piezoelectricity cantilever beam, second silicon based piezoelectricity cantilever beam is located in the fluting；It is described
First silicon based piezoelectricity cantilever beam one end is fixed on the silicon fixed pedestal, and the other end is hanging free end and with described
One mass is fixedly connected, and the fixing end of second silicon based piezoelectricity cantilever beam is the freedom of first silicon based piezoelectricity cantilever beam
End, and the other end is hanging and is fixedly connected with second mass；
First mass and the second mass block structure are identical, including：Integrated silicon mass and invest the frictional layer on its surface；
The stopper includes：Frictional layer pedestal, electrode layer and frictional layer；
The pad is located between the silicon fixed pedestal and stopper.
2. box-like MEMS widebands energy collecting device is replied in a kind of piezoelectricity-friction as claimed in claim 1 by cable, it is characterised in that institute
State the first silicon based piezoelectricity cantilever beam and the second silicon based piezoelectricity cantilever beam is shaped as rectangle or trapezoidal.
3. box-like MEMS widebands energy collecting device is replied in a kind of piezoelectricity-friction as claimed in claim 1 by cable, it is characterised in that institute
It is PZT ceramics or PMNT piezoelectric monocrystals to state the material of piezoelectric thick.
4. box-like MEMS widebands energy collecting device is replied in a kind of piezoelectricity-friction as claimed in claim 1 by cable, it is characterised in that institute
Piezoelectric thick electrode layer and supporting layer electrode layer is stated to be made up of Al, Ag, CrAu alloy or TiPt alloys one kind therein.
5. box-like MEMS widebands energy collecting device is replied in a kind of piezoelectricity-friction as claimed in claim 1 by cable, it is characterised in that institute
State piezoelectric thick layer and realize that stickup is bonded by adhesive with silicon cantilever supporting layer.
6. box-like MEMS widebands energy collecting device is replied in a kind of piezoelectricity-friction as claimed in claim 5 by cable, it is characterised in that institute
Adhesive is stated for conductive epoxy resin.
7. box-like MEMS widebands energy collecting device is replied in a kind of piezoelectricity-friction as claimed in claim 1 by cable, it is characterised in that institute
The electrode layer on stopper stated is made up of CrAu alloys.
8. box-like MEMS widebands energy collecting device is replied in a kind of piezoelectricity-friction as claimed in claim 1 by cable, it is characterised in that institute
State SU8 glue microtrabeculae or silicon dimple structure of the frictional layer of mass for surface with CrAu alloy electrode layers, corresponding stopper
Frictional layer be PI films or PDMS film；Or, mass frictional layer is PI or PDMS film, and corresponding stopper frictional layer is
SU8 glue microtrabeculae or silicon dimple structure of the surface with CrAu alloy electrode layers.
9. box-like MEMS widebands energy collecting device preparation method is replied in a kind of piezoelectricity-friction by cable, it is characterised in that including following step
Suddenly：
S1：Piezoelectric thick is prepared on silicon chip using bonding and thinning technique, and makes the piezoelectric thick electricity on piezoelectric thick surface
Pole layer；
The silicon chip refers to the soi wafer of upper and lower surface twin polishing and surface thermal oxide layer of silicon dioxide；
Described utilizing is bonded the step of preparing piezoelectric thick with thinning technique, specifically includes：By the piezoelectrics material of single-sided polishing
Combined with the silicon chip by epoxy bonding techniques, or one layer of electricity is deposited in the piezoelectrics material burnishing surface and the silicon chip surface
After the layer of pole, the piezoelectrics material is combined with the silicon chip by eutectic bonding technology；Then mechanical lapping, polishing method are passed through
Thinning piezoelectrics material, prepares the piezoelectric thick that thickness is 10 μm -30 μm；
It is described to make concretely comprising the following steps for the piezoelectric thick electrode layer that the upper and lower surface of piezoelectric thick covers：Adopted afterwards using first depositing
Described piezoelectric thick electrode layer is obtained with the method for ion beam milling etched features polarizing electrode；
S2：The front of piezoelectric energy collector main structure is processed using micro fabrication, the micro fabrication includes：Photoetching,
Development, wet method SiO2 etchings, piezoelectric thick etching and silicon bulk fabrication；
S3：Frictional layer is prepared at the back of the piezoelectric energy collector main structure, following steps are specifically included：
One layer of electrode layer is first deposited in the back silicon dioxide layer of the piezoelectric energy collector main structure, then in the electrode
Layer is used above SU8 adhesive process and prepares microtrabeculae frictional layer, and one layer of electrode layer is deposited on microtrabeculae frictional layer；
Or, prepare silicon dimple structure using machine cuts and with reference to wet method silicon etching method and deposit one layer of electricity on this structure
Pole layer；
Or, one layer of PDMS or PI film is prepared using whirl coating method；
S4：Micro Process is carried out at the back of the piezoelectric energy collector main structure, silicon based piezoelectricity cantilever beam is discharged, specifically included
Following steps：
First using wet etching or the graphical back electrode layer of dry etching method and silica, then carved using DRIE depth silicon
Erosion, to discharge silicon based piezoelectricity cantilever beam；
S5：Prepare and stop block structure, specifically include following steps：
One layer of electrode layer is deposited on the ordinary silicon substrates of surface thermal oxide layer of silicon dioxide using sputtering, whirl coating method, so
Make one layer of PDMS or PI film on the electrode layer afterwards；
Or, microtrabeculae frictional layer is prepared using SU8 adhesive process and one layer of electrode layer is deposited in the above；
Or, prepare silicon dimple structure using machine cuts and with reference to wet method silicon etching method and deposit one layer of electrode in the above
Layer；
S6：Assembly device, welding electric conductors, polarized piezoelectric piece；
The step of assembly device, includes：The piezoelectric energy collector main structure is passed through by pad using epoxy bonding method
It is connected on stopper.
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| CN105680723B (en) * | 2016-04-18 | 2017-06-16 | 苏州大学 | A kind of combined type wind energy collecting device |
| CN106301071A (en) * | 2016-08-10 | 2017-01-04 | 上海交通大学 | Low frequency piezoelectric type MEMS vibration energy collector and preparation method thereof |
| CN106787945B (en) * | 2017-02-27 | 2018-09-25 | 重庆大学 | A kind of piezoelectricity-friction electricity combined wide-band miniature energy collector |
| CN107808926B (en) * | 2017-11-09 | 2020-06-12 | 苏州大学 | Micro-energy collector based on piezoelectric thick film MEMS (micro-electromechanical systems) process and preparation method thereof |
| WO2019090601A1 (en) * | 2017-11-09 | 2019-05-16 | 苏州大学 | Micro energy collector based on piezoelectric thick film mems process and preparation method thereof |
| CN110491542B (en) * | 2018-05-15 | 2023-03-17 | 深圳热电新能源科技有限公司 | Friction luminescence isotope battery |
| CN109617448A (en) * | 2018-11-08 | 2019-04-12 | 南昌工程学院 | A kind of frictional energy collector and preparation method thereof |
| CN112072952A (en) * | 2020-07-15 | 2020-12-11 | 南京航空航天大学 | Double-resonance type low-frequency extension vibration power generation device and method |
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| CN102627251A (en) * | 2012-04-18 | 2012-08-08 | 重庆大学 | Process residual stress based micro two-dimensional vibration energy collector |
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| CN102627251A (en) * | 2012-04-18 | 2012-08-08 | 重庆大学 | Process residual stress based micro two-dimensional vibration energy collector |
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