CN106297872A - A kind of VREF power supply circuits of DDR4 DIMM - Google Patents
A kind of VREF power supply circuits of DDR4 DIMM Download PDFInfo
- Publication number
- CN106297872A CN106297872A CN201610948835.9A CN201610948835A CN106297872A CN 106297872 A CN106297872 A CN 106297872A CN 201610948835 A CN201610948835 A CN 201610948835A CN 106297872 A CN106297872 A CN 106297872A
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- resistance
- vref
- power supply
- supply circuits
- voltage
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
Abstract
The invention discloses the VREF power supply circuits of a kind of DDR4DIMM, including resistor voltage divider circuit, be used for exporting initial reference voltage；The voltage follower being connected with the outfan of resistor voltage divider circuit, obtains reference voltage VREF for initial reference voltage is carried out voltage follow.Visible, the present invention also add a voltage follower on the basis of resistor voltage divider circuit, and voltage follower makes the output impedance of VREF power supply circuits reduce, driving electric current increases, driving force strengthens, and capacity of resisting disturbance increases, thus improves the reliability of the VREF power supply circuits of DDR4 DIMM.
Description
Technical field
The present invention relates to DDR technical field, particularly relate to the VREF power supply circuits of a kind of DDR4 DIMM.
Background technology
DDR (Double Data Rate SDRAM, double data stream SDRAM) can transmit twice within a clock cycle
Data, the transmittability of its bus doubles than common SDRAM.DDR4 is forth generation DDR, in terms of power consumption and transmission speed
Increase than earlier generations.DDR4 DIMM (Dual-Inline-Memory-Modules, dual inline memory module) be by
The DIMM of many DDR4 memory grain compositions, namely usually said memory bar.
DDR4 uses SSTL level standard, refer to the I/O mode schematic diagram that Fig. 1, Fig. 1 are DDR4, and it supplies
Electricity power supply can be divided three classes: 1, main power source VDD and VDDQ；2, for the VTT of terminal coupling；3, reference power source VREF.Wherein,
VREF as the reference voltage, is used for judging the level height of input signal.It is considered when the signal level of input is higher than VREF
It is high level, is considered as low level when input signal is less than VREF.Reference power source VREF requires to follow VDDQ, and numerically
VREF=VDDQ/2.Owing to VREF is intended only as reference voltage, the electric current of VREF is typically small, typically uses resistor voltage divider circuit
Obtain, specifically, refer to the structural representation that Fig. 2, Fig. 2 are a kind of VREF power supply circuits of the prior art.
But for DDR4 DIMM, use the reliability of electric resistance partial pressure scheme to reduce.Because the work of DDR4 VDDQ
Being 1.2V as voltage, when the running voltage of DDR4 VDDQ is reduced to 1.2V, the standard value of VREF has been also reduced to 0.6V, essence
Degree requires as ± 1%, i.e. precision as little as ± 6mV, this proposes very high request to the power supply quality of output VREF.But,
Along with the raising of DDR4 clock speed, bus frequency is operated in 1.2GHz, various data wires easily, and the high frequency that clock line produces is made an uproar
The VREF that bleeder circuit also can be obtained by sound produces interference, reduces the reliability of resistor voltage divider circuit.It addition, at DDR4
In DIMM, typically being constituted 64 BITBUS network by 4 or 8 DDR4 granules, this means that VREF to be 4 or 8 granules simultaneously
In tens of addresses and order wire provide reference voltage, current drain increase so that dividing potential drop output VREF ≠ VDDQ/2, can
Reduce further by property.
Therefore, the VREF power supply circuits how providing a kind of DDR4 DIMM solving above-mentioned technical problem are this area skills
The problem that art personnel are presently required solution.
Summary of the invention
It is an object of the invention to provide the VREF power supply circuits of a kind of DDR4 DIMM, on the basis of resistor voltage divider circuit
Also add a voltage follower, voltage follower makes the output impedance of VREF power supply circuits reduce, and drives electric current to increase,
Driving force strengthens, and capacity of resisting disturbance increases, thus improves the reliability of the VREF power supply circuits of DDR4 DIMM.
For solving above-mentioned technical problem, the invention provides the VREF power supply circuits of a kind of DDR4 DIMM, including:
Resistor voltage divider circuit, is used for exporting initial reference voltage；
The voltage follower being connected with the outfan of described resistor voltage divider circuit, for carrying out described initial reference voltage
Voltage follow obtains reference voltage VREF.
Preferably, described resistor voltage divider circuit includes the first resistance, the second resistance, the first electric capacity and the second electric capacity, described
The resistance of the first resistance and described second resistance is equal, wherein:
First termination main power source VDDQ of described first resistance, the second end of described first resistance and described second resistance
First end connect, its common port as described resistor voltage divider circuit outfan export described initial reference voltage, described second
Second end ground connection of resistance；Described first electric capacity and described first resistor coupled in parallel, described second electric capacity and described second resistance are also
Connection.
Preferably, described voltage follower includes operational amplifier, wherein:
The normal phase input end of described operational amplifier is connected with the outfan of described resistor voltage divider circuit, described operation amplifier
The inverting input of device is connected with the outfan of described operational amplifier, and the outfan of described operational amplifier is as described voltage
The outfan of follower exports described reference voltage VREF.
Preferably, described voltage follower also include the first end be connected with the outfan of described voltage follower, the second end
The filter capacitor of ground connection.
Preferably, the capacitance of described filter capacitor is 0.1uF.
Preferably, described voltage follower also include the first end be connected with the outfan of described resistor voltage divider circuit, second
End is connected with the normal phase input end of described operational amplifier, for the 3rd resistance of current limliting.
Preferably, the resistance of described 3rd resistance is 10k Ω.
Preferably, the resistance of described first resistance and described second resistance is 100 Ω.
The invention provides the VREF power supply circuits of a kind of DDR4 DIMM, including resistor voltage divider circuit, be used for exporting initially
Reference voltage；The voltage follower being connected with the outfan of resistor voltage divider circuit, for initial reference voltage carried out voltage with
With obtaining reference voltage VREF.Visible, the present invention also add a voltage follower on the basis of resistor voltage divider circuit, electricity
Pressure follower makes the output impedance of VREF power supply circuits reduce, and drives electric current to increase, and driving force strengthens, and capacity of resisting disturbance increases
Add, thus improve the reliability of the VREF power supply circuits of DDR4 DIMM.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, below will be to institute in prior art and embodiment
The accompanying drawing used is needed to be briefly described, it should be apparent that, the accompanying drawing in describing below is only some enforcements of the present invention
Example, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to obtains according to these accompanying drawings
Obtain other accompanying drawing.
Fig. 1 is the I/O mode schematic diagram of DDR4；
Fig. 2 is the structural representation of a kind of VREF power supply circuits of the prior art；
The structural representation of the VREF power supply circuits of a kind of DDR4 DIMM that Fig. 3 provides for the present invention；
The physical circuit figure of the VREF power supply circuits of a kind of DDR4 DIMM that Fig. 4 provides for the present invention.
Detailed description of the invention
The core of the present invention is to provide the VREF power supply circuits of a kind of DDR4 DIMM, on the basis of resistor voltage divider circuit
Also add a voltage follower, voltage follower makes the output impedance of VREF power supply circuits reduce, and drives electric current to increase,
Driving force strengthens, and capacity of resisting disturbance increases, thus improves the reliability of the VREF power supply circuits of DDR4 DIMM.
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
The a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under not making creative work premise, broadly falls into the scope of protection of the invention.
Refer to the structural representation of the VREF power supply circuits of a kind of DDR4 DIMM that Fig. 3, Fig. 3 provide for the present invention, should
VREF power supply circuits include:
Resistor voltage divider circuit 1, is used for exporting initial reference voltage；
As preferably, resistor voltage divider circuit 1 includes the first resistance R1, the second resistance R2, the first electric capacity C1 and the second electricity
Holding C2, the resistance of the first resistance R1 and the second resistance R2 is equal, wherein:
Second end of first termination the main power source VDDQ, the first resistance R1 of the first resistance R1 and first end of the second resistance R2
Connecting, its common port exports initial reference voltage as the outfan of resistor voltage divider circuit 1, second termination of the second resistance R2
Ground；First electric capacity C1 and the first resistance R1 is in parallel, and the second electric capacity C2 and the second resistance R2 is in parallel.
It is understood that since it is desired that the initial reference voltage of resistor voltage divider circuit 1 is main power source VDDQ 1/2.Cause
This, require that the resistance of the first resistance R1 and the second resistance R2 is equal here, it addition, the first electric capacity C1 here and the second electric capacity C2
Play the effect of filtering.
As preferably, the resistance of the first resistance R1 and the second resistance R2 is 100 Ω.
Certainly, the first resistance R1 and the resistance of the second resistance R2 here can also be other numerical value, and the present invention is at this not
It is particularly limited, determines according to practical situation.
The voltage follower 2 being connected with the outfan of resistor voltage divider circuit 1, for initial reference voltage carried out voltage with
With obtaining reference voltage VREF.
Specifically, refer to the concrete electricity of the VREF power supply circuits of a kind of DDR4 DIMM that Fig. 4, Fig. 4 provide for the present invention
Lu Tu.
In the application, the voltage follower 2 of increase is used for reducing VREF and exports impedance, increases the driving force of VREF, carries
The capacity of resisting disturbance of high VREF, is particularly well-suited to this low-voltage of DDR4 DIMM, high primary frequency, the application scenario of heavy load.Specifically
Ground, voltage follower 2 plays a part Current amplifier, the small area analysis that resistor voltage divider circuit 1 exports is zoomed into big electric current, passes through
This increases the driving force of VREF.
As preferably, voltage follower 2 includes operational amplifier 21, wherein:
The normal phase input end of operational amplifier 21 is connected with the outfan of resistor voltage divider circuit 1, operational amplifier 21 anti-
Phase input is connected with the outfan of operational amplifier 21, and the outfan of operational amplifier 21 is as the output of voltage follower 2
End output reference voltage VREF.
Due to operational amplifier 21, it the voltage follower 2 realized can significantly reduce the output resistance of VREF
Anti-, improve driving force, just strengthen the capacity of resisting disturbance of VREF, the VREF provided than common electric resistance partial pressure mode is more suitable for
The use environment of DDR4 DIMM.
Certainly, voltage follower 2 here can also be adopted and realize in other ways, such as, realize with metal-oxide-semiconductor, this
Bright it is not particularly limited at this, determines according to practical situation.
As preferably, voltage follower 2 also include the first end be connected with the outfan of voltage follower 2, the second termination
The filter capacitor C3 on ground.
As preferably, the capacitance of filter capacitor C3 is 0.1uF.
As preferably, voltage follower 2 also include the first end be connected with the outfan of resistor voltage divider circuit 1, the second end
It is connected with the normal phase input end of operational amplifier 21, for the 3rd resistance R3 of current limliting.
As preferably, the resistance of the 3rd resistance R3 is 10k Ω.
In order to ensure the safety of operational amplifier 21, the present invention also adds in the front end of the normal phase input end of operational amplifier 21
Enter the 3rd resistance R3 for current limliting.
The resistance of the 3rd resistance R3 here can be 10k Ω, it is, of course, also possible to be other numerical value, the present invention is at this not
It is particularly limited, determines according to practical situation.
The invention provides the VREF power supply circuits of a kind of DDR4 DIMM, including resistor voltage divider circuit, be used for exporting initially
Reference voltage；The voltage follower being connected with the outfan of resistor voltage divider circuit, for initial reference voltage carried out voltage with
With obtaining reference voltage VREF.Visible, the present invention also add a voltage follower on the basis of resistor voltage divider circuit, electricity
Pressure follower makes the output impedance of VREF power supply circuits reduce, and drives electric current to increase, and driving force strengthens, and capacity of resisting disturbance increases
Add, thus improve the reliability of the VREF power supply circuits of DDR4 DIMM.
It should be noted that in this manual, the relational terms of such as first and second or the like is used merely to one
Individual entity or operation separate with another entity or operating space, and not necessarily require or imply these entities or operate it
Between exist any this reality relation or order.And, term " includes ", " comprising " or its any other variant are intended to
Contain comprising of nonexcludability, so that include that the process of a series of key element, method, article or equipment not only include those
Key element, but also include other key elements being not expressly set out, or also include for this process, method, article or set
Standby intrinsic key element.In the case of there is no more restriction, statement " including ... " key element limited, it is not excluded that
Other identical element is there is also in including the process of described key element, method, article or equipment.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.
Multiple amendment to these embodiments will be apparent from for those skilled in the art, as defined herein
General Principle can realize without departing from the spirit or scope of the present invention in other embodiments.Therefore, the present invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein and features of novelty phase one
The widest scope caused.
Claims (8)
1. the VREF power supply circuits of a DDR4DIMM, it is characterised in that including:
Resistor voltage divider circuit, is used for exporting initial reference voltage；
The voltage follower being connected with the outfan of described resistor voltage divider circuit, for carrying out voltage to described initial reference voltage
Follow and obtain reference voltage VREF.
2. VREF power supply circuits as claimed in claim 1, it is characterised in that described resistor voltage divider circuit include the first resistance,
Second resistance, the first electric capacity and the second electric capacity, the resistance of described first resistance and described second resistance is equal, wherein:
First termination main power source VDDQ of described first resistance, the second end of described first resistance and the first of described second resistance
End connects, and its common port exports described initial reference voltage, described second resistance as the outfan of described resistor voltage divider circuit
The second end ground connection；Described first electric capacity and described first resistor coupled in parallel, described second electric capacity and described second resistor coupled in parallel.
3. VREF power supply circuits as claimed in claim 2, it is characterised in that described voltage follower includes operational amplifier,
Wherein:
The normal phase input end of described operational amplifier is connected with the outfan of described resistor voltage divider circuit, described operational amplifier
Inverting input is connected with the outfan of described operational amplifier, and the outfan of described operational amplifier is as described voltage follow
The outfan of device exports described reference voltage VREF.
4. VREF power supply circuits as claimed in claim 3, it is characterised in that described voltage follower also includes the first end and institute
State the outfan connection of voltage follower, the filter capacitor of the second end ground connection.
5. VREF power supply circuits as claimed in claim 4, it is characterised in that the capacitance of described filter capacitor is 0.1uF.
6. VREF power supply circuits as claimed in claim 4, it is characterised in that described voltage follower also includes the first end and institute
State the outfan connection of resistor voltage divider circuit, the second end is connected with the normal phase input end of described operational amplifier, for current limliting
3rd resistance.
7. VREF power supply circuits as claimed in claim 6, it is characterised in that the resistance of described 3rd resistance is 10k Ω.
8. the VREF power supply circuits as described in any one of claim 2-7, it is characterised in that described first resistance and described second
The resistance of resistance is 100 Ω.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610948835.9A CN106297872A (en) | 2016-11-02 | 2016-11-02 | A kind of VREF power supply circuits of DDR4 DIMM |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610948835.9A CN106297872A (en) | 2016-11-02 | 2016-11-02 | A kind of VREF power supply circuits of DDR4 DIMM |
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| CN106297872A true CN106297872A (en) | 2017-01-04 |
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| CN201610948835.9A Pending CN106297872A (en) | 2016-11-02 | 2016-11-02 | A kind of VREF power supply circuits of DDR4 DIMM |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110556140A (en) * | 2018-06-04 | 2019-12-10 | 南亚科技股份有限公司 | Voltage stabilizer, dynamic random access memory and method for stabilizing bit line voltage |
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| US20080266996A1 (en) * | 2007-04-29 | 2008-10-30 | Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd | Memory power supply circuit |
| CN103389665A (en) * | 2013-07-20 | 2013-11-13 | 西安电子科技大学 | Detection control device of high-power digital power amplifier |
| CN203799666U (en) * | 2014-04-30 | 2014-08-27 | 四川华立德科技有限公司 | Voltage division circuit based on DDR2 memory |
| CN204065210U (en) * | 2014-07-02 | 2014-12-31 | 中国检验检疫科学研究院 | The isolated DC voltage collection circuit of linear change |
| CN105510758A (en) * | 2015-11-27 | 2016-04-20 | 湖北三江航天红峰控制有限公司 | Device for low resistance conduction |
| CN205581041U (en) * | 2016-04-19 | 2016-09-14 | 深圳职业技术学院 | Simple and easy hygrometer |
-
2016
- 2016-11-02 CN CN201610948835.9A patent/CN106297872A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080266996A1 (en) * | 2007-04-29 | 2008-10-30 | Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd | Memory power supply circuit |
| CN103389665A (en) * | 2013-07-20 | 2013-11-13 | 西安电子科技大学 | Detection control device of high-power digital power amplifier |
| CN203799666U (en) * | 2014-04-30 | 2014-08-27 | 四川华立德科技有限公司 | Voltage division circuit based on DDR2 memory |
| CN204065210U (en) * | 2014-07-02 | 2014-12-31 | 中国检验检疫科学研究院 | The isolated DC voltage collection circuit of linear change |
| CN105510758A (en) * | 2015-11-27 | 2016-04-20 | 湖北三江航天红峰控制有限公司 | Device for low resistance conduction |
| CN205581041U (en) * | 2016-04-19 | 2016-09-14 | 深圳职业技术学院 | Simple and easy hygrometer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110556140A (en) * | 2018-06-04 | 2019-12-10 | 南亚科技股份有限公司 | Voltage stabilizer, dynamic random access memory and method for stabilizing bit line voltage |
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