CN106274058B - The jetting height error compensating method of large area micro-nano structure electrohydrodynamics printing - Google Patents
The jetting height error compensating method of large area micro-nano structure electrohydrodynamics printing Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/07—Ink jet characterised by jet control
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Abstract
The invention discloses a kind of jetting height error compensating method of large area micro-nano structure electrohydrodynamics printing, its step are as follows:(1) quantity of substrate obligatory point is determined;(2) the Z axis coordinate value z of substrate obligatory point is obtainedi;(3) X/Y plane quadrilateral mesh is built;(4) the Z axis coordinate value z on X/Y plane quadrilateral mesh vertex is determinedj;(5) three-dimension curved surface of substrate print area is built;(6) the Z axis coordinate value z of current printing substrate position is obtainedc;(7) jetting height of electrohydrodynamics printing is compensated.The present invention breaks through limitation of the existing electrohydrodynamics printing technique to the Accurate Shaping of large area micro-nano structure device, realizes the preparation of the inkjet printing and micro nano structure device of the micro-nano device of large area structure.
Description
Technical Field
The invention relates to the technical field of electrohydrodynamics printing, in particular to a jet height error compensation method for electrohydrodynamics printing of a large-area micro-nano structure.
Background
The electrohydrodynamic printing has wide application prospects in the aspects of electronic devices, wearable equipment, flexible electronic displays, solar thin-film batteries, biological supports, tissue engineering, organic light-emitting diodes, biosensors and the like. The conventional polymer device manufacturing technology generally performs the manufacturing of the polymer device on various substrates by using processes such as optical, particle, mechanical or physical contact, and the like, such as photolithography, electron beam printing, interference lithography, laser direct writing, and the like. These preparation techniques involve many steps and complex processes, resulting in high development and production costs, long time periods, high temperature conditions, and polymer impact on the properties of the printing solution in high temperature environments. Therefore, inkjet printing based on a solution manufacturing process is more suitable for the preparation of polymer devices.
The inkjet printing technology mainly depends on the action of piezoelectricity, thermal bubbles or sound waves, and the like, and performs inkjet printing in a pushing mode, and because the energy generated by the mode is limited, and the polymer solution has high viscosity and surface tension, the nozzle is easy to block. The electro-hydrodynamic printing technology can realize high-resolution ink-jet printing of polymer solution, voltage is applied between a substrate and a nozzle, the solution flows out of a spray head under the action of induced electric field force, a meniscus is formed at the nozzle, charges are gathered on the meniscus along with the gradual rise of the voltage, the coulomb force among the charges causes the tangential stress of the liquid surface, the meniscus forms a Taylor cone at the top end of the nozzle under the action of shearing force, the coulomb force overcomes the surface tension of the liquid along with the increase of the electric field intensity, and the liquid is ejected from the top end of the Taylor cone to form liquid drops or jet flow.
The electrohydrodynamic printing process is easily influenced by the properties of the jet printing solution, the electric field intensity, the structure of the nozzle and other factors, and can be regulated and controlled by parameters such as the moving speed of the substrate, the applied voltage, the jet height and the like, and the parameters can influence the appearance of a printing functional device. The structural morphology prepared by the electrohydrodynamics printing technology can influence the performance of a functional device, such as printing thickness, uniformity and the like, for the functional device for printing a large-area micro-nano structure by electrohydrodynamics, the change of the ejection height is caused due to the unevenness of the substrate surface, so that the accurate forming of the functional device is influenced, however, in the preparation process of the device with the large-area micro-nano structure, the structural morphology of the large-area micro-nano device is influenced by the change of the ejection height by the existing electrohydrodynamics printing technology without adopting an effective method, so that the performance of the device is influenced.
In conclusion, the existing electrohydrodynamic printing technology is limited to the preparation of large-area micro-nano structures, and the structural morphology of the large-area micro-nano structures is difficult to further improve, so that the existing electrohydrodynamic printing technology is difficult to meet the requirement of accurate forming of large-area micro-nano structure devices.
Disclosure of Invention
The invention provides a jet height error compensation method for electrohydrodynamic printing of a large-area micro-nano structure, aiming at the problem that the existing electrohydrodynamic printing technology is difficult to realize the accurate forming of a large-area micro-nano structure device.
The technical scheme of the invention is as follows: a method for compensating the error of the jetting height of large-area micro-nano structure electrohydrodynamic printing comprises the following steps:
determining the number of substrate constraint points;
(II) obtaining Z-axis coordinate value Z of the substrate constraint point i ;
(III) constructing an XY plane quadrilateral grid;
(IV) determining Z-axis coordinate value Z of vertex of quadrilateral mesh of XY plane j ;
Fifthly, constructing a three-dimensional curved surface of the substrate printing area;
sixthly, obtaining the Z-axis coordinate value Z of the current printing substrate position c ;
(seventh) compensate for the jetting height of electrohydrodynamic printing.
Determining the number of the constraint points according to the printing area of the electrohydrodynamics, determining the number of the constraint points on an X axis and a Y axis in an XY plane of a substrate to be N and M respectively, wherein N is not less than 3,M is not less than 3, the number of the obtained constraint points is NxM, respectively obtaining the positions of the X axis and the Y axis of each constraint point according to the moving distance of a moving platform of the electrohydrodynamics device, and the coordinates of the NxM constraint points on the XY plane are (X) i ,y i ) N×M Wherein i is more than or equal to 1 and less than or equal to NxM.
In the second step, the Z-axis position is detected in situ by adopting the measurement and detection equipment to carry out on the NxM constraint points on the XY plane of the substrate, and the Z-axis coordinate value of the NxM constraint points is obtained and is Z i Wherein i is more than or equal to 1 and less than or equal to NxM.
And (III) constructing quadrilateral grids of an XY plane according to the printing area of the electrohydrodynamics, wherein the quantity of the grids on the X axis and the Y axis is S and T respectively, so that the quantity of the planar quadrilateral grids on the XY plane is S multiplied by T, and the planar coordinate (X) of each grid point is obtained j ,y j ) S×T Wherein j is more than or equal to 1 and less than or equal to S multiplied by T.
(IV) three-dimensional coordinate values (x) of N × M constraining points according to the substrate i ,y i ,z i ) N×M Determining Z-coordinate values of vertices of a planar quadrilateral mesh j The specific process is as follows:
(1) According to the baseThree-dimensional coordinate values (x) of N × M constraining points of the board i ,y i ,z i ) N×M To obtain a system of linear equations:
wherein, P i -P j I, j =1,2, …, N × M, is the distance between the constraining points on the XY plane, and
δ(P i -P j )=|P i -P j | 2 [(ln|P i -P j |-1)],c i is a coefficient of a linear system of equations;
(2) Obtaining coefficients c of the system of linear equations from (1) i ,i=1,2,…,N×M;
(3) Obtaining Z-axis coordinate value Z of planar quadrilateral grid vertex j :
z j =c 1 δ(P j -P 1 )+c 2 δ(P j -P 2 )+…c N×M δ(P j -P N×M ) Where j =1,2, …, sxt.
(V) three-dimensional coordinate value (x) according to planar quadrilateral mesh vertex j ,y j ,z j ) S×T The three-dimensional curved surfaces are respectively connected in sequence along the X, Y direction to form the three-dimensional curved surface of the substrate jet printing area of the four-corner grid.
(VI) obtaining the Z-axis coordinate value Z of the current printing substrate position c The method comprises the following steps:
a. determining the position of the substrate printed by the current electrohydrodynamics in an XY plane, judging a planar quadrilateral grid where the current printing position is located in the XY plane,
b. obtaining the Z-axis coordinate value Z of the current printing substrate position according to the four vertexes of the plane quadrilateral grid where the current printing position is located c With the substrate printed with current electrohydrodynamics in the XY planeThe distance between the inner position and the vertex of the planar quadrilateral mesh is used as a weight, and the Z-axis coordinate value Z of the vertex of the planar quadrilateral mesh is j Carrying out weighted average to obtain the Z-axis coordinate value Z of the current printing substrate position c :
Wherein z is c Z-axis coordinate value, Z, for the current printed substrate position f 、z s 、z t And z l Z-axis coordinate values, d, of four vertices of the planar quadrilateral mesh in which the current printing position is located f 、d s 、d t And d l Four vertexes z of the planar quadrilateral grid respectively at the current printing substrate position and the current printing position f 、z s 、z t And z l The distance between them.
(VII) compensating for jet height of electrohydrodynamic printing according to Z-axis coordinate value Z of current printing substrate c Determining a compensated jetting height for electrohydrodynamic printing: h 2 =H 1 +z c ,
Wherein H 2 Compensating for jet height for current print substrate position, H 1 Original jetting height, z, for the current printed substrate position c Is the Z-axis coordinate value of the current printed substrate position.
The invention breaks through the limitation of the current electrohydrodynamic printing technology on the accurate forming of the large-area micro-nano structure device, and realizes the ink-jet printing of the large-area micro-nano structure device and the preparation of the micro-nano structure device.
Drawings
FIG. 1 is a block flow diagram of the present invention.
Fig. 2 is a schematic diagram of a three-dimensional curved surface.
Detailed Description
Embodiments of the invention are further described below with reference to the accompanying drawings:
as shown in fig. 1, a method for compensating an ejection height error in large-area micro-nano structure electrohydrodynamic printing comprises the following steps:
1. the number of substrate restraint points is determined.
Determining the number of the constraint points according to the printing area of the electrohydrodynamics, determining the number of the constraint points on an X axis and a Y axis in an XY plane of a substrate as N and M respectively, generally N is not less than 3,M is not less than 3, the larger the printing area is, the larger the value of N and M is, the number of the constraint points is NxM, the positions of the X axis and the Y axis of each constraint point are respectively obtained according to the moving distance of a moving platform of the electrohydrodynamics device, and the coordinates of the NxM constraint points on the XY plane are (X and M are) i ,y i ) N×M Wherein i is more than or equal to 1 and less than or equal to NxM.
2. And determining the Z-axis coordinate value of the substrate constraint point.
Carrying out in-situ detection on the Z-axis positions of the NxM constraint points on the XY plane of the substrate by adopting measurement and detection equipment to obtain Z-axis coordinate values of the NxM constraint points as Z i Wherein i is more than or equal to 1 and less than or equal to NxM.
3. And constructing an XY plane quadrilateral grid.
According to the electro-hydrodynamic printing area, a quadrilateral grid of an XY plane is constructed, the grid numbers on X and Y axes are respectively set as S and T, so that the planar quadrilateral grid number on the XY plane is S multiplied by T, and the plane coordinate of each grid point is (X) j ,y j ) S×T Wherein j is more than or equal to 1 and less than or equal to S multiplied by T.
4. And determining Z-axis coordinate values of the vertexes of the planar quadrilateral grids.
Three-dimensional coordinate values (x) of N × M constraint points based on the substrate i ,y i ,z i ) N×M And determining Z-axis coordinate values of the vertexes of the planar quadrilateral grids, wherein the specific implementation process is as follows:
(1) Three-dimensional coordinate values (x) from NxM constraining points of the substrate i ,y i ,z i ) N×M The linear equation system is formed as follows:
in the formula, P i -P j I, j =1,2, …, N × M, is a distance between constraining points on the XY plane, and satisfies:
δ(P i -P j )=|P i -P j | 2 [(ln|P i -P j |-1)],c i are coefficients of a linear system of equations.
(2) Solving the formula (1) to obtain the coefficient c of the linear equation set i ,i=1,2,…,N×M。
(3) Calculating Z-axis coordinate values of the vertices of the planar quadrilateral mesh, wherein the relation can be expressed as:
z j =c 1 δ(P j -P 1 )+c 2 δ(P j -P 2 )+…c N×M δ(P j -P N×M ) (3)
where j =1,2, …, sxt.
5. And constructing a three-dimensional curved surface of the substrate printing area.
As shown in fig. 2, the three-dimensional coordinate values (x) of the vertices of the planar quadrilateral mesh are based on j ,y j ,z j ) S×T The three-dimensional curved surfaces are sequentially connected along the X, Y direction to form a substrate jet printing area of a four-corner grid.
6. Calculating the Z-axis coordinate value of the current position of the printing substrate, wherein the specific implementation process is as follows:
(1) And determining the position of the substrate printed by the current electrohydrodynamics in an XY plane, and judging the planar quadrilateral grid where the current printing position is located in the XY plane.
(2) Calculating the Z-axis coordinate value of the current printed substrate according to four vertexes of the planar quadrilateral mesh in which the current printing position is located, and performing weighted average on the Z-axis coordinate value of the vertex of the planar quadrilateral mesh by using the distance between the position of the current electrohydrodynamic printed substrate in the XY plane and the vertex of the planar quadrilateral mesh as a weight to obtain the Z-axis coordinate value of the current printed substrate position, wherein the calculation formula is as follows:
in the formula z c Z-axis coordinate value, Z, for the current printed substrate position f 、z s 、z t And z l Z-axis coordinate values, d, of four vertices of the planar quadrilateral mesh in which the current printing position is located f 、d s 、d t And d l Four vertexes z of the planar quadrilateral grid respectively at the current printing substrate position and the current printing position f 、z s 、z t And z l The distance between them.
7. According to the Z-axis coordinate value of the current printing substrate position, the jet height of the compensation electrohydrodynamic printing is as follows:
H 2 =H 1 +z c (5)
in the formula H 2 Compensating for jet height for current print substrate position, H 1 Original jetting height, z, for the current printed substrate position c Is the Z-axis coordinate value of the current printed substrate position.
The examples should not be construed as limiting the invention but any modifications made based on the spirit of the invention should be within the scope of protection of the invention.
Claims (8)
1. A jet height error compensation method for electrohydrodynamic printing of a large-area micro-nano structure is characterized by comprising the following steps: the method comprises the following steps:
determining the number of substrate constraint points;
(II) obtaining Z-axis coordinate value Z of the substrate constraint point i Wherein 1 is less than or equal to iNot more than NxM, N is the number of the constraint points of the substrate on the X axis, M is the number of the constraint points of the substrate on the Y axis, and N is not less than 3,M is not less than 3;
(III) constructing an XY plane quadrilateral grid;
(IV) determining Z-axis coordinate value Z of vertex of quadrilateral mesh of XY plane j Wherein j is more than or equal to 1 and less than or equal to S multiplied by T, S is the number of grids on the X axis of the constructed XY plane quadrilateral grids, and T is the number of grids on the Y axis of the constructed XY plane quadrilateral grids;
constructing a three-dimensional curved surface of a substrate printing area;
sixthly, obtaining the Z-axis coordinate value Z of the current printing substrate position c Wherein c is>0;
(seventh) compensate for the jetting height of electrohydrodynamic printing.
2. The method for compensating the jetting height error of the large-area micro-nano structure electrohydrodynamic printing according to the claim 1, which is characterized in that: determining the number of constraint points according to the printing area of the electrohydrodynamics, determining the number of the constraint points on an X axis and a Y axis in an XY plane of a substrate as N and M respectively, wherein N is not less than 3,M is not less than 3, respectively obtaining the positions of the X axis and the Y axis of each constraint point according to the moving distance of a moving platform of the electrohydrodynamics device, and the coordinates of the NxM constraint points on the XY plane are (X is multiplied by M is) i ,y i ) N×M Wherein i is more than or equal to 1 and less than or equal to NxM.
3. The method for compensating the jetting height error of the large-area micro-nano structure electrohydrodynamic printing according to the claim 2, which is characterized in that: in the second step, Z-axis position in-situ detection is carried out on the NxM constraint points on the XY plane of the substrate by adopting measurement and detection equipment, and the Z-axis coordinate value of the NxM constraint points is obtained and is Z i Wherein i is more than or equal to 1 and less than or equal to NxM.
4. The method for compensating the jetting height error of the large-area micro-nano structure electrohydrodynamic printing according to the claim 3, which is characterized in that: in the third step, a quadrilateral grid of an XY plane is constructed according to the printing area of the electrohydrodynamicsThe number of grids on the X-axis and Y-axis are S and T, respectively, and the plane coordinates of each grid point are obtained as (X) j ,y j ) S×T Wherein j is more than or equal to 1 and less than or equal to S multiplied by T, S is more than or equal to N, and T is more than or equal to M.
5. The method for compensating the jetting height error of the large-area micro-nano structure electrohydrodynamic printing according to claim 4, characterized in that: (IV) three-dimensional coordinate values (x) of N × M constraining points on the substrate i ,y i ,z i ) N×M Determining Z-coordinate values of vertices of a planar quadrilateral mesh j The specific process is as follows:
(1) Three-dimensional coordinate values (x) from NxM constraining points of the substrate i ,y i ,z i ) N×M To obtain a system of linear equations:
wherein, P i -P j I, j =1,2, …, N × M, is the distance between the constraining points on the XY plane, andδ(P i -P j )=|P i -P j | 2 [(ln|P i -P j |-1)],c i is a coefficient of a linear system of equations;
(2) Obtaining coefficient c of linear equation system from (1) i ,i=1,2,…,N×M;
(3) Obtaining Z-axis coordinate value Z of planar quadrilateral grid vertex j :
z j =c 1 δ(P j -P 1 )+c 2 δ(P j -P 2 )+…c N×M δ(P j -P N×M ) Wherein j =1,2, …, sxt.
6. The method for compensating the jetting height error of the large-area micro-nano structure electrohydrodynamic printing according to claim 5, wherein the method is characterized in thatIn the following steps: (V) three-dimensional coordinate value (x) according to planar quadrilateral mesh vertex j ,y j ,z j ) S×T The three-dimensional curved surfaces are respectively connected in sequence along the X, Y direction to form the three-dimensional curved surface of the substrate jet printing area of the four-corner grid.
7. The method for compensating the jetting height error of the large-area micro-nano structure electrohydrodynamic printing according to claim 6, characterized in that: (VI) obtaining the Z-axis coordinate value Z of the current printing substrate position c The method comprises the following steps:
a. determining the position of the substrate printed by the current electrohydrodynamic method in an XY plane, judging a planar quadrilateral grid where the current printing position is located in the XY plane,
b. obtaining the Z-axis coordinate value Z of the current printing substrate position according to the four vertexes of the planar quadrilateral grid where the current printing position is located c Using the distance between the position of the substrate printed by the current electrohydrodynamics in the XY plane and the vertex of the planar quadrilateral mesh as a weight, and performing Z-axis coordinate value Z on the vertex of the planar quadrilateral mesh j Carrying out weighted average to obtain the Z-axis coordinate value Z of the current printing substrate position c :
Wherein z is c A Z-axis coordinate value of the current printed substrate position, wherein c>0,z f 、z s 、z t And z l Z-axis coordinate values, d, of four vertices of the planar quadrilateral mesh in which the current printing position is located f 、d s 、d t And d l Four vertexes z of the planar quadrilateral grid respectively at the current printing substrate position and the current printing position f 、z s 、z t And z l A distance therebetween of 1<s≤S,s=f+1,1<t≤T,t=l+1,0<f≤S-1,0<l≤T-1。
8. The large area micro-nano structure of claim 7The jet height error compensation method for electrohydrodynamic printing is characterized by comprising the following steps: (VII) compensating for jet height of electrohydrodynamic printing according to Z-axis coordinate value Z of current printing substrate c Determining a compensated jetting height for electrohydrodynamic printing: h 2 =H 1 +z c In which H 2 Compensating for jet height for current print substrate position, H 1 Original jetting height, z, for the current printed substrate position c Is the Z-axis coordinate value of the current printed substrate position.
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