CN103219280B - Method for manufacturing ductile circuit interconnection structure by utilization of electrostatic spinning technique and product thereof - Google Patents

Method for manufacturing ductile circuit interconnection structure by utilization of electrostatic spinning technique and product thereof Download PDF

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CN103219280B
CN103219280B CN201310090363.4A CN201310090363A CN103219280B CN 103219280 B CN103219280 B CN 103219280B CN 201310090363 A CN201310090363 A CN 201310090363A CN 103219280 B CN103219280 B CN 103219280B
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substrate
elastic
pattern
silicon wafer
electrostatic spinning
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CN103219280A (en
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黄永安
尹周平
汤朋朋
段永青
刘慧敏
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华中科技大学
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Abstract

本发明公开了一种利用静电纺丝工艺制备延性电路互联结构的方法,包括:通过静电纺丝装置向位于其喷头下方且沿着水平方向来回直线移动的硅片基板上喷射静电纺丝溶液,由此在基板上形成呈波形延伸且具备微纳米直径的图案;选取弹性衬底并执行清洁处理,然后对弹性衬底做拉伸处理;将处于拉伸状态的弹性衬底紧贴在形成有图案的硅片基板上,挤出两者接触面之间的空气后予以分离,使得硅片基板上的图案转印至弹性衬底表面;恢复弹性衬底的自然状态,由此制得所需的延性电路互联结构。 The present invention discloses a method of using the electrostatic spinning process for producing a ductile circuit interconnect structure, comprising: a nozzle located below the through electrostatic spinning apparatus and fro in a horizontal direction on a silicon wafer substrate linearly movable jet electrostatic spinning solution, thus was formed on the substrate and includes a wave-shaped pattern of micro nanometer diameter; select a flexible substrate and performing a cleaning process, and then stretching the elastic substrate do; the elastic substrate in a stretched state is formed in close contact pattern on a silicon wafer substrate, to be extruded after the air separation between the two contact surfaces, so that the transfer pattern on the silicon wafer substrate to the elastomeric substrate surface; elastically restore the natural substrate, thereby producing the desired ductility circuit interconnect structure. 本发明还公开了相应的产品及其应用。 The present invention also discloses a corresponding products and applications. 通过本发明,能够生成具备高延展性、高精度级的两级波纹结构,并尤其适用于延性电路互联结构大面积的可靠制造。 By the present invention, it can be generated with high ductility, high-precision stage two corrugations, a particularly reliable and suitable for manufacturing a large-area circuit interconnect structure ductility.

Description

利用静电纺丝工艺制备延性电路互联结构的方法及产品 Ductility circuit interconnect structure using the method of electrostatic spinning process and product prepared

技术领域 FIELD

[0001] 本发明属于延性电路制造领域,更具体地,涉及一种利用静电纺丝工艺制备延性电路互联结构的方法及产品。 [0001] The present invention belongs to the field of producing ductile circuits, and more particularly, relates to a method and an electrostatic spinning process for making products ductility circuit interconnect structure.

背景技术 Background technique

[0002] 延性电路(strechablecircuit)作为一种新兴电子技术,又称为可伸缩电路、柔性电路等,其不同于传统的硅基板电路,由于具备独特的柔性/延展性以及高效、低成本制造等特点,因而在多个领域均具有广泛应用前景,可实现与服饰、皮肤的结合使其多功能化,能够覆盖在复杂形状表面和运动部件表面,具体运用譬如包括人造电子皮肤、仪表化人造膀胱、大面积传感器和驱动器等。 [0002] Ductility circuit (strechablecircuit) as a new electronic technologies, also known as scalable circuits, flexible circuits and the like, which is different from conventional silicon-based circuit board, since with a unique flexible / ductility, and high efficiency, low cost, etc. characteristics, which in many areas has broad application prospects, and clothing can be achieved, so that in conjunction with the multifunctional skin, capable of covering the surface of a complicated shape surface and moving parts, such as the specific application comprises an electronic artificial skin, artificial bladder instrumented large area like sensors and actuators. 考虑到延性电路经常需要响应构造的改变并在其变形极限范围内延伸,以充分适应它们的周围环境,因此需要对延性电路设置有可适当拉伸和弯曲的互联结构,以保证经过多次拉伸和松弛后仍保证完好。 Considering the response is often necessary to change the configuration and extends within its limits deformation, to sufficiently accommodate their surroundings ductility circuit, the need to have an appropriate tension and bending ductility circuit interconnect structure is provided to ensure that after several pull after stretching and relaxation is still ensure intact.

[0003] 为了制备延性电路的互联结构,现有技术中已经提出了各种解决方案。 [0003] To prepare the ductility interconnect circuit, the prior art has proposed various solutions. 例如,Khang.DY等提出了一种制备方法(参见"Astretchableformofsingle-crystal siliconforhigh-performanceelectronicsonrubbersubstrates'', Science311 (5758) :208-212),其中首先采用传统光刻手段在硅基板上生成厚度在纳米至亚微米级别的单晶硅带,之后把单晶硅带转移到有一定拉伸预应变的弹性橡胶基材上,最后去除弹性橡胶基材的预应变,使其恢复到自然状态,则硅带受挤压会在垂直于基材方向发生屈曲变形,产生规则的、周期性可拉伸的波纹状结构。然而,这种直线纤维通过屈曲方式制备波纹互联结构的方法存在诸多不足:如光刻过程繁琐、波纹结构无法准确定位、可能呈现平面外屈曲等。 For example, Khang.DY proposed a method for preparing the like (see "Astretchableformofsingle-crystal siliconforhigh-performanceelectronicsonrubbersubstrates '', Science311 (5758): 208-212), which first means generates using conventional photolithography on a silicon substrate at a thickness of nm with submicron silicon single crystal, the single crystal silicon after an elastic band is transferred to the rubber substrate have a tensile pre-strain, and finally the removal of pre-strained elastic rubber substrate to restore it to its natural state, the silicon ribbon the extrusion may, however, has many deficiencies of corrugated fiber interconnection structure produced by such a linear way by buckling in perpendicular direction to the substrate buckling deformation occurs, produce a regular, periodic corrugated structures stretchable: lithography cumbersome process, corrugated structure can not accurate positioning, may show plane buckling and so on.

[0004] 为了简化制备工艺,提高制备效率同时利于封装,CN102162176A中提出了一种利用静电纺丝来制备微纳波纹结构的方法,其中通过将静电纺丝高分子溶液经由喷头喷射出来,并经过电场作用落在柔性基板上以形成波纹结构。 [0004] In order to simplify the manufacturing process, increase the production efficiency at the same time facilitate packaging, CN102162176A proposes a process for preparing a micro relief structure sonar using electrostatic spinning, which by electrospinning a polymer solution is ejected through the nozzle, and through electric field falls to form a corrugated structure on a flexible substrate. 然而进一步的研宄表明,该方法仍然存在以下的缺陷或不足:首先,所制得的波纹结构仅具备一级波纹,尤其作为互联结构运用于延性电路时,可延展性方面有所不足,当发生较大弹性变化时还是会发生断裂;其次,该方法所制得的波纹结构仅在波纹分布方向有较好的延展性,在其他方向尤其是与波纹分布方向垂直的方向上的延展性很差。 However, further study based show that this method is still insufficient or there are the following defects: Firstly, the obtained corrugations have a corrugation only, especially when used as a ductile circuit interconnect structure, may be inadequate ductility, when or breakage occurs when large elastic changes; Secondly, this method only obtained corrugations have good ductility in the distribution direction of the corrugated and ductility in a direction perpendicular to other directions, especially the direction and distribution corrugation is difference. 因此,在相关领域中有必要对此互联结构件的制备工艺及其关键工艺参数作出进一步的改进,以获得更为符合各类应用场合的延性电路产品。 Therefore, it is necessary in the related art to make further improvements to this critical process parameters Preparation and interconnect structures in order to obtain a more ductile circuit products to meet the various applications.

发明内容 SUMMARY

[0005] 针对现有技术的以上缺陷或改进需求,本发明的目的在于提供一种利用静电纺丝工艺制备延性电路互联结构的方法及产品,其中通过对互联结构形成机理的进一步研宄, 相应调整制备工艺,可生成具备高延展性、高精度级的两级波纹结构,并尤其适用于延性电路互联结构大面积的可靠制造。 [0005] To solve the above drawbacks of the prior art or the need for improvement, object of the present invention is to provide a method and a product using the ductility of the circuit interconnect structure made electrostatic spinning process, wherein the mechanism is formed by further study based on the interconnection structure, the respective adjusting the preparation process, can be generated with high ductility, high-precision stage two corrugations, a particularly reliable and suitable for manufacturing a large-area circuit interconnect structure ductility.

[0006] 按照本发明的一个方面,提供了一种利用静电纺丝工艺制备延性电路互联结构的方法,其特征在于,该方法包括下列步骤: [0006] According to an aspect of the invention, there is provided a method of using the electrostatic spinning process for producing a ductile circuit interconnect structure, wherein the method comprises the steps of:

[0007] (a)通过静电纺丝装置向位于其喷头下方且沿着水平方向来回直线移动的硅片基板上喷射静电纺丝溶液,由此在硅片基板上形成呈波形延伸且具备微纳米直径的图案; [0007] (a) jet electrostatic spinning solution onto a silicon wafer substrate and located below the head moves back and forth linearly along the horizontal direction by the electrostatic spinning apparatus, whereby the substrate was formed on a silicon wafer and includes a wave-shaped micro-nano the diameter of the pattern;

[0008] (b)选取弹性衬底并执行清洁处理,然后对弹性衬底做拉伸处理; [0008] (b) selecting a substrate and an elastic cleaning process is performed, and a substrate made of elastic stretching treatment;

[0009] (C)将通过步骤(b)处理后处于拉伸状态的弹性衬底紧贴在形成有所述图案的硅片基板上,挤出两者接触面之间的空气后予以分离,使得硅片基板上的图案转印至弹性衬底表面; Flexible substrate [0009] (C) in a stretched state after the processing of step (b) on a silicon wafer substrate against which the pattern is formed, the air to be separated after extrusion the contact surface therebetween, such that the pattern on the silicon wafer substrate is transferred to the elastomeric substrate surface;

[0010] (d)恢复弹性衬底的自然状态,由此制得所需的延性电路互联结构。 [0010] (d) restore the natural state of the elastic substrate to thereby obtain the desired ductility of the circuit interconnect structure.

[0011] 作为进一步优选地,在步骤(a)中,所述静电纺丝装置的工作电压被设定I. 5KV~ 3KV,且其喷头与娃片基板之间沿着高度方向的间距为IOmm~30mm。 [0011] As a further preferably, in step (a), the operating voltage electrostatic spinning apparatus is set I. 5KV ~ 3KV, and the spacing between the nozzle and the baby along the height direction of the substrate sheet is IOmm ~ 30mm.

[0012] 作为进一步优选地,在步骤(a)中,所述娃片基板的运动速度被设定为100mm/s~ 400mm/s〇 [0012] As a further preferably, in step (a), the moving speed of the substrate sheet Wa is set to 100mm / s ~ 400mm / s〇

[0013] 作为进一步优选地,在步骤(b)中,所述弹性衬底优选为正方形,它的四个角分别被向外拉伸相等的距离。 [0013] As a further preferably, in step (b), the elastic substrate is preferably square, and its four corners are stretched outwardly an equal distance.

[0014] 作为进一步优选地,所述弹性衬底各个边的被拉伸量A1^与弹性衬底自身对角线长度变化量AL2之间满足下列表达式: [0014] As a further preferably, satisfies the following expression between the amount of the respective sides of the stretched elastic substrate and the elastic substrate itself A1 ^ diagonal length variation AL2:

Figure CN103219280BD00041

[0015] 作为进一步优选地,在步骤(C)中,选取弹性衬底的中央区域来转印硅片基板的静电纺丝图案,并使得波形延伸的图案沿着弹性衬底的对角线而分布。 [0015] As a further preferably, in step (C), select the elastic central region of the substrate to transfer the pattern electrospinning silicon substrate, and such a waveform pattern extending along the diagonal of the substrate and the elastic distributed.

[0016] 作为进一步优选地,在步骤(C)中,还可以在弹性衬底上设置粘性的网格,并使得衬底表面上除粘结点之外的其他区域不具备粘性,然后将弹性衬底贴在在硅片基板上执行转移过程。 [0016] As a further preferably, in step (C), the viscosity may be provided on the elastic substrate in a grid, and such that the area other than the bonding points on the substrate surface does not have tack, and an elastic the substrate attached to the transfer process performed on a silicon wafer substrate.

[0017] 按照本发明的另一方面,还提供了相应的延性电路互联结构产品。 [0017] According to another aspect of the present invention also provides a corresponding product ductility circuit interconnect structure.

[0018] 作为进一步优选地,所述互联结构的整体图案呈正弦波或方波形状,且其线条本身为螺旋状或波形。 [0018] As a further preferred, the overall pattern of the interconnect structure of a sine wave or square wave shape, and a spiral or waveform line itself.

[0019] 按照本发明的又一方面,还提供了所述延性电路互联结构产品在延性电路、生物传感器、可拉伸的太阳能电池等柔性电子器件制备过程中的应用。 [0019] According to still another aspect of the invention, it provides the use of the ductile product circuit interconnect structure during preparation ductility circuit, a biosensor, a solar cell or the like stretchable flexible electronic devices.

[0020] 总体而言,按照本发明所构思的以上技术方案与现有技术相比,主要具备以下的技术优点: [0020] In general, compared with the prior art according to the above aspect of the inventive concept, mainly includes the following technical advantages:

[0021] 1、通过采用静电纺丝工艺,溶液将在电场作用下不断拉伸形成微纳米级直径的纤维,并呈螺旋形下降喷射到基板表面形成各类第一级波形图案;此外,通过弹性衬底的收缩作用可在第一级波形图案的基础上产生第二级波形图案,由此获得整体呈波形而且在大波形上还形成各类小波形的多级波纹结构;相应地,可获得延展性更强的产品,并尤其适用于延性电路互联结构的用途; [0021] 1, by employing the electrospinning process, the solution will continue to draw the electric field formed in the micro-nano fiber diameter, and spiral drops sprayed onto the surface of the substrate is formed of various types of waveform pattern of the first stage; Furthermore, by contraction of the elastic substrate may be generated based on waveform pattern of a second stage of the first stage of the waveform pattern, thereby obtaining the entire waveform as a waveform and is also formed on a large multi-level waveform types of small corrugations; accordingly, can be more ductile product is obtained, and ductility is particularly suitable for use in the circuit interconnect structure;

[0022] 2、按照本发明所制得的两级波纹互联结构均处于一个平面上,因此与现有技术相比,不会出现平面外屈曲,有利于后续封装工序,而且整体结构分布均匀,分辨率高; [0022] 2, prepared according to the present invention the two interconnected corrugated structure are in one plane, as compared with the prior art, does not occur plane buckling, facilitate subsequent packaging step, and uniform distribution of the overall structure, High-resolution;

[0023] 3、通过对制备工艺中的一些关键工艺条件譬如静电纺丝装置工作电压值、基板移动速度以及弹性衬底的拉伸处理和粘性网格处理等进行研宄改进,可以根据需求制得各类呈现两级波形的图案,特别是能够对第二级波形的最长波长及其分布均匀性进行控制,并具备更高的可伸缩性; [0023] 3, prepared by the process of some of the critical process conditions such as stretching treatment and the like viscosity Trellis working voltage electrostatic spinning apparatus, the moving speed of the substrate and a resilient substrate in a Subsidiary improvements made according to the needs We have presented two waveform patterns of various types, in particular, the second stage can be the longest wavelength and the waveform of the controlled distribution, and have greater scalability;

[0024] 4、按照本发明的制备方法整体工艺流程简单、便于操作,可直接在常规环境中加工,同时可结合阵列化和卷到卷的工艺实现大面积快速制造,因此在降低成本和提高制造效率方面均具备优势。 [0024] 4, prepared according to the method of the present invention the entire process is simple, easy to operate, can be directly processed in a normal environment, the array can be combined with the process and the volume of the larger area to volume rapid manufacturing, thus reducing costs and improving manufacturing efficiency respects have the advantage.

附图说明 BRIEF DESCRIPTION

[0025] 图1是按照本发明用于制备延性电路互联结构的制造装置的主体结构示意图; [0025] FIG. 1 is a schematic view of the main structure of the manufacturing apparatus prepared for the ductility of the circuit interconnect structure in accordance with the present invention;

[0026] 图2是按照本发明用于制备延性电路互联结构的方法流程图; [0026] FIG. 2 is a process for the preparation of ductile circuit interconnect structure according to the present invention, a flow chart for;

[0027] 图3是用于显示硅片基板处于不同移动速度时所对应形成的一级波形图案的示意图,其中图3a是娃片基板处于100mm/s时对应形成的波形图案,图3b是娃片基板处于200mm/s时对应形成的波形图案,图3c是硅片基板处于300mm/s时对应形成的波形图案,图3d是娃片基板处于400mm/s时对应形成的波形图案; [0027] FIG. 3 is a schematic view for displaying a silicon substrate is formed corresponding to the waveform patterns when the moving speed is different, wherein FIG. 3a is a waveform corresponding to a pattern formed when at 100mm / s baby substrates, Figure 3b is a baby waveform pattern corresponding to the chip substrate is 200mm / s is formed, corresponding to FIG. 3c is a waveform pattern formed when the substrate wafer is 300mm / s, corresponding to FIG. 3d is a waveform pattern formed on the substrate sheet when the baby is 400mm / s;

[0028] 图4是用于显示弹性衬底收缩前后的状态对比图,其中图4a是收缩前的状态,图4b是收缩后的状态; [0028] FIG. 4 is a comparison of before and after a state of the elastic shrinkage of the substrate for display, wherein FIG. 4a is a state before shrinkage, FIG. 4b is a state after shrinkage;

[0029] 图5是用于示范性显示转印至弹性衬底上的图案在衬底收缩前后的状态对比图, 其中图5a是尚处于拉伸状态时弹性衬底表面上的图案,图5b是处于收缩/还原状态后弹性衬底表面上的图案; [0029] FIG. 5 is a comparison chart of an exemplary display state on the elastic substrate in a pattern before and after the shrinkage is transferred to the substrate, where Figure 5a is still in an elastic pattern on the substrate surface when stretched state, FIG. 5b It is in an elastic pattern on the substrate surface after shrinking / reduction state;

[0030] 图6是在转印过程中设置在弹性衬底上的粘性网格的示意图。 [0030] FIG. 6 is a schematic view of a viscous grid disposed on the elastic substrate during transfer.

[0031] 在所有附图中,相同的附图标记用来表示相同元件或结构,其中: [0031] In the drawings, the same reference numerals are used to designate the same elements or structures, wherein:

[0032] 1-流量泵2-注射器3-喷头4-高压发生器5-硅片基板6-吸附平台7-移动平台 [0032] 1- flow pump head 4- 3- 2- syringe silicon wafer substrate voltage generator 5- 6- 7- suction internet mobile platform

具体实施方式 Detailed ways

[0033] 为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。 [0033] To make the objectives, technical solutions and advantages of the present invention will become more apparent hereinafter in conjunction with the accompanying drawings and embodiments of the present invention will be further described in detail. 应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。 It should be understood that the specific embodiments described herein are only intended to illustrate the present invention and are not intended to limit the present invention.

[0034] 图1是按照本发明用于制备延性电路互联结构的制造装置的主体结构示意图。 [0034] FIG. 1 is a schematic view of the main structure of the manufacturing apparatus prepared for the ductility of the circuit interconnect structure in accordance with the present invention. 如图1中所示,按照本发明的延性电路互联结构的制造装置主要包括流量泵1、注射器2、高压发生器4、吸附平台6和移动平台7等,其中注射器2中充有譬如聚氧化乙烯PEO、PEDOT:PSS 之类的静电纺丝溶液,并配备流量泵1,由此在流量泵的作用下将静电纺丝溶液微量精密地推动,并输送至与注射器一端相连通的喷头3。 As shown in FIG. 1, the manufacturing apparatus according to the ductility circuit interconnect structure of the present invention largely comprises a flow pump, syringe 2, the high voltage generator 4, the suction stage 6 and 7 and other mobile platforms, the syringe 2 is filled with a polyoxyalkylene such as ethylene PEO, PEDOT: PSS electrospinning solution and the like, and with the flow rate of the pump 1, whereby the electrostatic spinning solution pushed in precisely trace the action of the pump flow, and transported to one end communicating with the injector nozzle 3. 吸附平台6位于喷头3的喷射下方,它的上面吸附承载有硅片基板5,并通过与之相连的移动平台7沿着水平方向来回直线移动。 Adsorption platform 6 is positioned below the ejection head 3 which carries the above-adsorbed silicon substrate 5, and connected thereto by moving the platform 7 moves linearly back and forth in the horizontal direction. 高压发生器4的正极与金属材质的喷头3或注射器2相连,其负极与金属材质的吸附平台6相连,由此使静电纺丝溶液在电场作用下从喷头4向基板6的表面喷射,并呈螺旋状下降。 High voltage generator and the positive electrode metal material 3 or the head 4 of the syringe 2 is connected, is connected to the negative electrode and the metal platform adsorption material 6, whereby the electrostatic spinning solution is ejected from the nozzle 4 to the surface of substrate 6 in the electric field, and spiral decline.

[0035] 其具体工作机理为:极化后的高分子溶液在电场作用下形成射流,射流表面带电, 如图2中所示,由于同种电荷互相排斥,射流形成"鞭动",加速飞向基材,在空间形成螺旋状,此时若运动平台以合适速度单向移动,此螺旋状纤维喷印在硅基板上形成呈波形(譬如,正弦波、方形等)延伸的的单级(第一级)波纹图案。 [0035] Specific working mechanism is: a polymer solution after polarization form jets, the jet charged surface in the electric field, as shown in Figure 2, since the same kind of charges repel each other, jet formation "whipping" fly acceleration to a substrate, a spiral space is formed, then if the one-way motion platform moves at a suitable speed, this spiral is formed as a fiber-printing waveform (for example, sine, square, etc.) extending in a single silicon substrate stage ( The first stage) moire patterns.

[0036] 此外,按照本发明的制备装置还配备清洁单元和拉伸机构等,该清洁单元用于对譬如PDMS的弹性衬底执行清洁处理,该拉伸机构用于将清洁后的弹性衬底沿其多个不同方向执行拉伸,然后将处于拉伸状态的弹性衬底紧贴在形成有静电纺丝图案的硅片基板上,挤出两者接触面之间的空气后予以分离,由此使得硅片基板上的图案转印至弹性衬底表面。 [0036] Further, the manufacturing apparatus according to the invention is also equipped with a cleaning unit and the like stretching means, the cleaning means for example an elastic PDMS substrate cleaning process is performed, the means for stretching the elastic substrate after cleaning the stretching in which a plurality of different directions, then the elastic in a stretched state against a substrate on a silicon wafer substrate having a pattern of electrostatic spinning, the air to be extruded after separation between the two contact surfaces, by the this silicon wafer substrate such that the pattern on the substrate surface is transferred to the elastic. 在确定图案已经转印至弹性衬底表面或其中央标定区域之后,恢复弹性衬底的自然状态,由此在第一级波形图案的基础上还产生第二级波形图案,并获得整体呈波形形状、且其线条本身为螺旋状或波形的多级波纹结构。 After determining the pattern has been transferred to the substrate surface or the central elastic region calibration to restore the natural state of the elastic substrate, whereby the first stage on the basis of the waveform pattern on the second stage also produces a waveform pattern and a waveform obtained as a whole shape, and a multi-stage helical corrugations line itself or waveform.

[0037] 下面将参照图2来具体描述按照本发明用于制备延性电路互联结构的方法流程: [0037] 2 will be specifically described below a method for the preparation of ductile flow circuit interconnect structure in accordance with the present invention with reference to FIG:

[0038] 首先可启动静电纺丝装置的流量泵,将注射器内的静电纺丝溶液推动并输送至喷头,接着通过调节高压发生器的电压,使得静电纺丝溶液带电,带电溶液在电场作用下打破与表面张力的平衡形成射流,从喷头加速向着硅片基板的表面飞去。 [0038] First, to start the flow pump of an electrospinning apparatus, the electrostatic spinning solution pushed into the syringe and delivered to the nozzle, followed by adjusting the voltage of the high voltage generator, so that the electrostatic spinning solution was charged, under the action of an electric field in the charging solution and forming a jet breaking the equilibrium surface tension, from the head towards the surface of the wafer substrate to accelerate the fly. 在空间运动过程中,发生类似"鞭动"呈螺旋状下降,最终在硅片基板上形成呈波形延伸且具备微纳米量级直径的图案。 In the course of the movement space, the occurrence of similar "whipping" spiral decrease, eventually extending wave shape comprising a diameter of the order of micro-nano pattern on the silicon wafer substrate.

[0039] 接着,选取譬如TOMS的四边形弹性衬底并执行清洁处理,在其中央区域标出一个标定区域,然后对弹性衬底做拉伸处理,同时尽量保证标定区域的拉伸变形比较规格;可以将弹性衬底的四个角加装在四角拉伸机构上,该拉伸机构的工作原理与四爪卡盘相类似, 当用扳手扳动小锥齿轮时,四角会沿着半径方向移动相等距离。 [0039] Next, select a quadrangle such TOMS elastic substrate and performing a cleaning process, indicated in its central region a calibration area, and then do the stretching elastic substrate while try to ensure that the calibration standard tensile deformation comparison region; the four corners of the elastic substrate may be installed at the four corners stretching mechanism, the stretching mechanism works with a similar four-jaw chuck, when pulled bevel pinion with a wrench, the four corners will move in the radial direction equal distance. 此弹性衬底拉伸前后的状态对比可参照图4a和4b。 States before and after the elastic substrate may be stretched comparison with reference to Figures 4a and 4b.

[0040] 接着,使弹性衬底保持拉伸状态不变,并将其紧贴在形成有静电纺丝图案的硅片基板上,挤出两者接触面之间的空气后予以分离,使得硅片基板上的图案转印至弹性衬底表面。 [0040] Next, the elastic substrate stretched state remains unchanged and close to the silicon wafer substrate on which is formed a pattern of electrostatic spinning, the air to be extruded after separation between the two contact surfaces, so that the silicon pattern on the substrate sheet surface is transferred to the elastic substrate. 分离速度应尽快,并尽量使波纹图案落在弹性衬底标定区域内。 Separation speed as soon as possible, and as far as possible so that the elastic wave pattern falls within the region of the calibration substrate.

[0041] 最后,可反向旋转扳手,使弹性衬底的四角向中心移动以恢复弹性衬底的自然状态,挡弹性衬底恢复自然状态后,在其表面上将呈现整体呈波形而且在大波形上还形成各类小波形的多级波纹结构,由此制得所需的延性电路互联结构。 [0041] Finally, the wrench can be reversely rotated, so that the four corners of the elastic substrate is moved toward the center in order to restore the natural state of the elastic substrate, the substrate after the elastic stopper to restore the natural state, exhibits, at its surface as a whole but also in large waveform multi-stage forming a corrugated structure further types of small wave waveform, thereby producing the desired ductility of the circuit interconnect structure.

[0042] 按照本发明的一个优选实施例,在静电纺丝过程中,硅片基板的运动速度被设定为100mm/s~400mm/s。 [0042] According to a preferred embodiment of the present invention, in the electrostatic spinning process, the moving speed of the silicon wafer substrate is set to 100mm / s ~ 400mm / s. 这是因为如图3a-3d中所示,娃片基板的运动速度是影响第一级波形图案具体形状的重要因素。 This is an important factor because as shown in FIG. 3a-3d, the moving speed of the substrate sheet is a baby affect the first stage of the particular shape of the wave pattern. 因此经过较多的比较测试,将硅片基板的运动速度设定为上述范围,以便获得各种所需的第一级波形形状,并有助于第二级波形图案的生成,由此根据不同需求获得不同形状和可拉伸比的延性电路互联结构。 More so after comparison test, the speed of movement of the silicon wafer substrate is set in the above range, the first stage in order to obtain the desired shapes of the various waveforms, and generates a waveform pattern of the second stage contributes, depending thereby demand may be obtained in different shapes and tensile ductility ratio circuit interconnect structure. 波形图案在衬底收缩前后的状态对比可具体参照图5a和5b。 Wave patterns before and after the state of the substrate can be contracted Comparative particular reference to Figures 5a and 5b.

[0043] 在本发明中,优选采用弹性衬底的中央区域来转印硅片基板的静电纺丝图案,并使得波形延伸的图案沿着弹性衬底的对角线而分布。 [0043] In the present invention, an elastic central region of the substrate is preferably used to transfer a pattern electrospinning silicon substrate, and such a waveform pattern distributed along a diagonal extending elastomeric substrate. 这样,可保证弹性衬底的变形比较规贝IJ,进而使得较好的两级波形图案。 Thus, the elastically deformable substrate to ensure compliance shell IJ comparison, and further preferably such that the two waveform pattern.

[0044] 按照本发明的另外一个优选实施方式,所述静电纺丝装置的工作电压被设定为I. 5KV~2KV,且其喷头与硅片基板之间沿着高度方向的间距为15m~20mm。 [0044] According to a further preferred embodiment of the present invention, the electrostatic spinning apparatus operating voltage is set to I. 5KV ~ 2KV, and the silicon wafer substrate between the nozzle and the distance along the height direction of 15m ~ 20mm. 这样可以获得直径相对较大的第一级波形图案,并可通过此直径控制来间接控制第二级波形图案的最长波长;此外,所获得的两级波形互联结构还具备高延展性、高精度级的特点。 Such a relatively large diameter can be obtained waveform pattern of the first stage, and through this indirectly controlling the diameter of the longest wavelength control waveform pattern of the second stage; in addition, two waveforms obtained interconnect structure further includes a high ductility, high features precision level.

[0045] 除了通过调节静电纺丝装置的工作电压、以及喷头与硅片基板之间的间距这一方式之外,本发明中还研宄出另外一种对第二级波形图案的最长波长进行控制的方式,也即在弹性衬底上设置粘性的网格,并譬如通过氧等离子或紫外臭氧处理使得衬底表面上除粘结点之外的其他区域不具备粘性,然后将弹性衬底贴在在硅片基板上执行转移过程。 [0045] In addition to electrostatic spinning apparatus by adjusting the operating voltage, and in this embodiment the spacing between the nozzle and the silicon wafer substrate, the present invention further study based on the longest wavelength showing another waveform pattern of the second stage controlling manner, i.e., provided on the elastic substrate viscous grid, and for example, oxygen plasma or ultraviolet-ozone treatment so that the bonding area other than the points on the substrate surface does not have tack, and then the elastic substrate attached to the transfer process performed on a silicon wafer substrate. 通过以上方式,由于弹性衬底仅在网格的各个粘结点上具备粘性,其余区域不具备粘性,这样转印后的图案仅通过网格与弹性衬底相粘结,而两个相邻粘结点之间的间距决定了第二级波形的最长波长。 In the above manner, the elastic substrate is provided only on the viscosity of each of the bonding points of the grid, the remaining area where no sticky, so that the transfer pattern by the elastic mesh bonded with the substrate, but only two adjacent It determines the distance between the bonding points of the second stage of the longest wavelength waveform.

[0046] 此外,研宄发明,当弹性衬底仅沿着某一个方向收缩时,沿该方向的波形图案振幅最大,而波形图案在垂直于该方向的方向上振幅最小;为了使得弹性衬底能够沿着以上两个相互垂直的方向均能均匀收缩,进而保证产生的第二级波形图案的振幅更为均匀,因此本发明中用于转印静电纺丝图案的弹性衬底优选为正方形,并且它的四个角分别被向外拉伸相等的距离。 [0046] Further, a Subsidiary invention, only when the elastic contraction of the substrate along a certain direction, in this direction the maximum amplitude of the waveform pattern, waveform pattern and the minimum amplitude in the direction perpendicular to the direction; in order to make the elastic substrate can be uniform shrinkage can more along two mutually perpendicular directions, thereby ensuring the amplitude of the second stage of the waveform patterns produced more uniform, thus the present invention is preferably used for the elastic substrate transfer electrospinning a square pattern, and its four corners are stretched outwardly an equal distance. 在一个优选实施例中,所述弹性衬底各个边被拉伸的变化量A1^与弹性衬底自身对角线长度变化量AL2之间满足下列表达式 Satisfy the following expression between a preferred embodiment, the amount of change in the respective sides of the substrate is elastically stretched elastic substrate itself A1 ^ diagonal length variation AL2

Figure CN103219280BD00071

[0047] 为了进一步具体解释说明本发明,以下给出了四个实施例。 [0047] In order to illustrate the invention in further detail, the following four embodiments are given.

[0048] 实施例1 : [0048] Example 1:

[0049] A:配置重量百分比浓度为10%的巨氧化乙烯溶液,在30°C下使用磁力搅拌器搅拌20小时,静止2小时;将上述溶液注入注射器,注射器的金属喷头内径为0. 8mm,金属喷头与高压发生器的正极相连,高压发生器的负极与吸附平台相连,喷头与硅片基板之间沿着高度方向的间距为15mm,硅片基板放置在吸附平台上并通过移动平台以100mm/S的速度沿着水平方向运动,同时施加I. 5KV的工作电压执行静电纺丝; [0049] A: Configuration concentration of 10% by weight of ethylene oxide giant solution, at 30 ° C using a magnetic stirrer for 20 hours and still 2 hours; the above solution was poured into a syringe, the syringe inner diameter of the metal nozzle is 0. 8mm the positive electrode metal nozzle and high voltage generator is connected to the suction stage is connected to the negative high voltage generator, and the silicon substrate between the nozzle pitch along the direction of height 15mm, placed on a silicon wafer substrate by moving the suction stage platform 100mm / S of the speed of movement in the horizontal direction, while applying a working voltage 5KV I. electrospinning is performed;

[0050] B:选取40X40mm的干净、新鲜的弹性PDMS衬底,并在其中心标定出20X20mm的中央区域。 [0050] B: Select Clean 40X40mm, fresh elastomeric PDMS substrate, 20X20mm and calibrate the central region at the center thereof. 将该衬底夹装到拉抻机构上并执行拉伸处理; The clip is mounted on the substrate Stretching mechanism and performing stretching process;

[0051] C:将处于拉伸状态的PDMS衬底紧贴在已形成有波形图案的硅片基板上,挤出两者接触面之间的空气,尽量使波形图案处于弹性衬底的标定中央区域,同时使得波形延伸的图案沿着I3DMS衬底的对角线而分布;然后迅速将硅片与PDMS衬底予以分离,使得硅片基板上的图案转印至PDMS衬底表面; [0051] C: PDMS substrate will be in a stretched state on a silicon wafer substrate in close contact with the wave pattern has been formed, the extrusion of air between the two contact surfaces, as far as possible so that the elastic wave pattern in the center of the substrate calibration area, while making the waveform pattern distributed along a diagonal extending I3DMS substrate; then quickly will be separated from the substrate silicon and PDMS, such that the pattern on the silicon wafer substrate is transferred to the PDMS substrate surface;

[0052] D :移除PDMS衬底与拉伸机构的连接使恢复至自然状态,由此制得所需的延性电路互联结构。 [0052] D: removing PDMS substrate so that the stretching mechanism is connected to the restore the natural state, thereby obtaining the desired ductility of the circuit interconnect structure.

[0053] 实施例2 [0053] Example 2

[0054] A :配置重量百分比浓度为6%的PED0T:PSS导电溶液,在20°C下使用磁力搅拌器搅拌15小时,静止2小时;将上述溶液注入注射器,注射器的金属喷头内径为0. 6mm,金属喷头与高压发生器的正极相连,喷头与硅片基板之间沿着高度方向的间距为20mm,高压发生器的负极与吸附平台相连,硅片基板放置在吸附平台上并通过移动平台以200mm/s的速度沿着水平方向运动,同时施加I. 8KV的工作电压执行静电纺丝; [0054] A: Configuration concentration of 6% by weight of PED0T: PSS conductive solution, at 20 ° C using a magnetic stirrer for 15 hours, still two hours; the above solution was poured into a syringe, the syringe inner diameter of the metal nozzle is 0. 6mm, the positive electrode metal nozzle and high voltage generator is connected between the nozzle and the silicon wafer substrate along the height direction of the pitch is 20mm, and the suction stage is connected to the negative high voltage generator, it is placed on a silicon wafer substrate by moving the suction stage platform at a speed of 200mm / s in the horizontal direction of motion, while applying a voltage of 8KV I. work performed electrospinning;

[0055] B:选取40X40mm的干净、新鲜的弹性PDMS衬底,并在其中心标定出20X20mm的中央区域。 [0055] B: Select Clean 40X40mm, fresh elastomeric PDMS substrate, 20X20mm and calibrate the central region at the center thereof. 将该衬底夹装到拉抻机构上并执行拉伸处理; The clip is mounted on the substrate Stretching mechanism and performing stretching process;

[0056] C:将处于拉伸状态的PDMS衬底紧贴在已形成有波形图案的硅片基板上,挤出两者接触面之间的空气,尽量使波形图案处于弹性衬底的标定中央区域,同时使得波形延伸的图案沿着I3DMS衬底的对角线而分布;然后迅速将硅片与PDMS衬底予以分离,使得硅片基板上的图案转印至PDMS衬底表面; [0056] C: PDMS substrate will be in a stretched state on a silicon wafer substrate in close contact with the wave pattern has been formed, the extrusion of air between the two contact surfaces, as far as possible so that the elastic wave pattern in the center of the substrate calibration area, while making the waveform pattern distributed along a diagonal extending I3DMS substrate; then quickly will be separated from the substrate silicon and PDMS, such that the pattern on the silicon wafer substrate is transferred to the PDMS substrate surface;

[0057] D :移除PDMS衬底与拉伸机构的连接使恢复至自然状态,由此制得所需的延性电路互联结构。 [0057] D: removing PDMS substrate so that the stretching mechanism is connected to the restore the natural state, thereby obtaining the desired ductility of the circuit interconnect structure.

[0058] 实施例3 [0058] Example 3

[0059]A:配置重量百分比浓度为10%的巨氧化乙烯溶液,在30°C下使用磁力搅拌器搅拌20小时,静止2小时;将上述溶液注入注射器,注射器的金属喷头内径为0. 6mm,金属喷头与高压发生器的正极相连,喷头与硅片基板之间沿着高度方向的间距为25mm,高压发生器的负极与吸附平台相连,硅片基板放置在吸附平台上并通过移动平台以300mm/s的速度沿着水平方向运动,同时施加2KV的工作电压执行静电纺丝; [0059] A: Configuration concentration of 10% by weight of an ethylene giant peroxide solution at 30 ° C using a magnetic stirrer for 20 hours and still 2 hours; the above solution was poured into a syringe, the syringe inner diameter of the metal nozzle is 0. 6mm the positive electrode metal nozzle and high voltage generator is connected between the nozzle and the silicon wafer substrate height along the pitch direction is 25mm, and the suction stage is connected to the negative high voltage generator, is placed on a silicon wafer substrate by moving the suction stage platform 300mm / s, the speed of movement in the horizontal direction, while applying a working voltage of 2KV perform electrospinning;

[0060] B :选取40X40mm的干净、新鲜的弹性PDMS衬底,并在其中心标定出20X20mm的中央区域。 [0060] B: Select Clean 40X40mm, fresh elastomeric PDMS substrate, 20X20mm and calibrate the central region at the center thereof. 将该衬底夹装到拉抻机构上并执行拉伸处理; The clip is mounted on the substrate Stretching mechanism and performing stretching process;

[0061] C:将处于拉伸状态的PDMS衬底紧贴在已形成有波形图案的硅片基板上,挤出两者接触面之间的空气,尽量使波形图案处于弹性衬底的标定中央区域,同时使得波形延伸的图案沿着I3DMS衬底的对角线而分布;然后迅速将硅片与PDMS衬底予以分离,使得硅片基板上的图案转印至PDMS衬底表面; [0061] C: PDMS substrate will be in a stretched state on a silicon wafer substrate in close contact with the wave pattern has been formed, the extrusion of air between the two contact surfaces, as far as possible so that the elastic wave pattern in the center of the substrate calibration area, while making the waveform pattern distributed along a diagonal extending I3DMS substrate; then quickly will be separated from the substrate silicon and PDMS, such that the pattern on the silicon wafer substrate is transferred to the PDMS substrate surface;

[0062] D:移除PDMS衬底与拉伸机构的连接使恢复至自然状态,由此制得所需的延性电路互联结构。 [0062] D: removing PDMS substrate so that the stretching mechanism is connected to the restore the natural state, thereby obtaining the desired ductility of the circuit interconnect structure.

[0063] 实施例4 [0063] Example 4

[0064] A:配置重量百分比浓度为6%的PEDOT:PSS导电溶液,在20°C下使用磁力搅拌器搅拌15小时,静止2小时;将上述溶液注入注射器,注射器的金属喷头内径为0. 8mm,金属喷头与高压发生器的正极相连,喷头与硅片基板之间沿着高度方向的间距为30mm,高压发生器的负极与吸附平台相连,硅片基板放置在吸附平台上并通过移动平台以400mm/s的速度沿着水平方向运动,同时施加3KV的工作电压执行静电纺丝; [0064] A: Configuration concentration of 6% by weight of PEDOT: PSS conductive solution, at 20 ° C using a magnetic stirrer for 15 hours, still two hours; the above solution was poured into a syringe, the syringe inner diameter of the metal nozzle is 0. 8mm, the positive electrode metal nozzle and high voltage generator is connected between the nozzle and the silicon wafer substrate height along the pitch direction is 30mm, and the suction stage is connected to the negative high voltage generator, is placed on a silicon wafer substrate by moving the suction stage platform at a speed of 400mm / s in the horizontal direction of motion, while applying a working voltage of 3KV perform electrospinning;

[0065] B :选取40X40mm的干净、新鲜的弹性PDMS衬底,并在其中心标定出20X20mm的中央区域。 [0065] B: Select Clean 40X40mm, fresh elastomeric PDMS substrate, 20X20mm and calibrate the central region at the center thereof. 将该衬底夹装到拉抻机构上并执行拉伸处理; The clip is mounted on the substrate Stretching mechanism and performing stretching process;

[0066] C:在处于拉伸状态的PDMS衬底上设置如图6中所示的粘性网格,并通过氧等离子体处理使得衬底表面上除网格粘结点之外的其他区域不具备粘性,然后将弹性衬底贴在在硅片基板上,尽量使波形图案处于弹性衬底的标定中央区域,同时使得波形延伸的图案沿着PDMS衬底的对角线而分布;然后迅速将硅片与PDMS衬底予以分离,使得硅片基板上的图案转印至PDMS衬底表面; [0066] C: viscosity grid disposed illustrated in FIG. 6 in the PDMS substrate is in tension, and that the treatment by oxygen plasma area other than the grid points on the bonding surface of the substrate is not comprising a viscous and resilient substrate attached on the silicon wafer substrate, as far as possible the calibration waveform pattern in a central region of the elastic substrate, while making the waveform pattern distributed along a diagonal extending PDMS substrate; then quickly silicon and PDMS substrate to be separated, such that the pattern on the silicon wafer substrate is transferred to the PDMS substrate surface;

[0067] D:移除PDMS衬底与拉伸机构的连接使恢复至自然状态,由此制得所需的延性电路互联结构。 [0067] D: removing PDMS substrate so that the stretching mechanism is connected to the restore the natural state, thereby obtaining the desired ductility of the circuit interconnect structure.

[0068] 本领域的技术人员容易理解,以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。 [0068] Those skilled in the art will readily appreciate, the above-described preferred embodiment of the present invention only but are not intended to limit the present invention, any modifications within the spirit and principle of the present invention, equivalent substitutions, and improvements, etc., should be included within the scope of the present invention.

Claims (4)

1. ー种利用静电纺丝エ艺制备具备两级波纹结构的延性电路互联结构的方法,其特征在于,该方法包括下列步骤: (a) 通过静电纺丝装置向位于其喷头下方且沿着水平方向来回直线移动的硅片基板上喷射静电纺丝溶液,该静电纺丝溶液在电场作用下呈螺旋状下降,其中静电纺丝装置的エ作电压被设定为I. 5KV~3KV,喷头与娃片基板之间沿着高度方向的间距为IOmm~30mm, 并且娃片基板的移动速度被设定为100mm/s~400mm/s,由此在所述娃片基板上形成呈单级波形延伸且具备微纳米直径的图案; (b) 选取弹性衬底并执行清洁处理,然后对该弹性衬底沿其多个不同方向做拉伸处理; (c) 将通过步骤(b)处理后处于拉伸状态的所述弹性衬底紧贴在形成有所述图案的硅片基板上,挤出两者接触面之间的空气后予以分离,使得所述硅片基板上的图案转印至所述弹性衬底的表面 1. Preparation of Ester arts ー electrospinning method includes the use of a ductile kind interconnection circuit configuration of the two wave-like structure, characterized in that the method comprises the steps of: (a) the nozzle located below and along through electrostatic spinning apparatus back and forth in the horizontal direction on the silicon wafer substrate linearly movable jet electrostatic spinning solution, the electrostatic spinning solution fall spirally in the electric field, wherein the electrostatic spinning apparatus for Ester voltage is set to I. 5KV ~ 3KV, nozzle between the substrates and the baby along the height direction of the pitch IOmm ~ 30mm, and the moving speed of the substrate sheet Wa is set to 100mm / s ~ 400mm / s, thereby forming a single-stage waveform as a baby on the substrates and includes a pattern extending micro nanometer diameter; (b) selecting a substrate and an elastic cleaning process is performed, and then do the stretching treatment in which a plurality of different directions of the elastic substrate; (c) after the processing of step (b) is the elastic substrate stretched state of close contact with the silicon wafer substrate formed with the pattern to be extruded after the separation of air between the two contact surfaces, so that the pattern is transferred on to the silicon wafer substrate said surface of the elastic substrate ; (d) 在所述图案已转印至所述弹性衬底的表面之后,恢复所述弹性衬底的自然状态,由此通过弹性衬底的收缩作用在所述单级波形的基础上在同一平面内还产生第二级波形,进而获得所需的延性电路互联结构,该互联结构整体呈波形形状且其线条自身为螺旋状或者波形。 ; (D) after the pattern has been transferred to the surface of the elastic substrate, the elastic recovery of the natural state of the substrate, whereby the substrate by the elastic contraction on the basis of the waveform of the single-stage also produces the same plane of the second-stage waveform, and thus obtain the desired ductility circuit interconnect structure, the interconnect structure and the waveform shape as a whole which is itself a helical line or waveform.
2. 如权利要求1所述的方法,其特征在于,在步骤(b)中,所述弹性衬底为正方形,它的四个角分别被向外拉伸相等的距离。 2. The method according to claim 1, wherein, in step (b), the elastic substrate is a square, and its four corners are stretched outwardly an equal distance.
3. 如权利要求1所述的方法,其特征在于,在步骤(b)中,所述弹性衬底各个边被拉伸的变化量AL1与弹性衬底自身对角线长度变化量AL2之间满足下列表达式: 3. The method according to claim 1, wherein, in step (b), the amount of change among themselves diagonal length variation of each side of the substrate is elastically stretched elastomeric substrate AL1 and AL2 satisfy the following expression:
Figure CN103219280BC00021
4. 如权利要求2或3所述的方法,其特征在于,在步骤(c)中,还在所述弹性衬底上设置粘性的网格,并使得该弹性衬底的表面上除粘结点之外的其他区域不具备粘性,然后将该弹性衬底贴在在所述硅片基板上执行所述转印过程。 4. The method of claim 2 or claim 3, wherein, in step (c), the viscosity is also provided on the elastic substrate, the mesh, and so that in addition to the adhesive on the surface of the elastic substrate An area other than the point does not have the tackiness, and then attached to the elastic substrate in the transfer process performed on the silicon wafer substrate.
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