CN106274058A - The jetting height error compensating method that large area micro-nano structure electrohydrodynamics prints - Google Patents

Abstract

The invention discloses the jetting height error compensating method that a kind of large area micro-nano structure electrohydrodynamics prints, its step is as follows: (one) determines the quantity of substrate obligatory point；(2) the Z axis coordinate figure z of substrate obligatory point is obtained_i；(3) X/Y plane quadrilateral mesh is built；(4) the Z axis coordinate figure z on X/Y plane quadrilateral mesh summit is determined_j；(5) three-dimension curved surface of substrate print area is built；(6) the Z axis coordinate figure z of current printing substrate position is obtained_c；(7) jetting height that electrohydrodynamics prints is compensated.The present invention breaks through the restriction to the Accurate Shaping of large area micro-nano structure device of the existing electrohydrodynamics printing technique, it is achieved the inkjet printing of the micro-nano device of large area structure and the preparation of micro nano structure device.

Description

The jetting height error compensating method that large area micro-nano structure electrohydrodynamics prints

Technical field

The present invention relates to electrohydrodynamics printing technique field, particularly relate to a kind of large area micro-nano structure electrofluid and move The jetting height error compensating method that mechanics prints.

Background technology

Electrohydrodynamics be printed upon electronic device, wearable device, flexible electronic displays, solar film battery, The aspects such as biological support, organizational project, Organic Light Emitting Diode, biosensor are with a wide range of applications.Traditional is poly- Compound device technology of preparing is usually and utilizes the techniques such as light, particle, machinery or physical contact to be polymerized in various substrates The preparation of sundries part, such as photolithographic techniques, electron beam printing technology, interference photoetching technology, laser direct-writing etc..These prepare skill The step that art relates to is various, and complex process, cause exploitation and production cost high, and the time cycle is long, needs high temperature bar Part, polymer produces impact to the performance printing solution in high temperature environments.Therefore, inkjet printing based on solution manufacture method It is more suitable for preparing polymer device.

Inkjet technology relies primarily on the effects such as piezoelectricity, thermal or sound wave, carries out inkjet printing in the mode of pushing, by In finite energy produced by this mode, and polymer solution has higher stickiness and surface tension, easily blocks spray Mouth.Electrohydrodynamics printing technique can realize the high-resolution inkjet printing of polymer solution, and electrohydrodynamics prints Technology is applying voltage between substrate and nozzle, and under induction electric field force effect, solution flows out from shower nozzle, is formed at nozzle Meniscus, along with voltage gradually rises, electric charge is assembled at meniscus, and the Coulomb force between electric charge causes liquid surface to produce tangential answering Power, under the effect of shearing force, meniscus forms taylor cone in nozzle tip, and along with electric field intensity increases, Coulomb force overcomes liquid Surface tension force, liquid penetrates from the top of taylor cone, forms drop or jet.

Electrohydrodynamics printing technique is easily subject to the factors such as the structure of the attribute of spray printing solution, electric field intensity, shower nozzle Impact, the parameter such as the voltage that by the translational speed of substrate, can be applied, jetting height regulates and controls, and these parameters can affect The pattern of printing function device.Structure and morphology prepared by electrohydrodynamics printing technique can affect the performance of functional device, Such as print thickness, uniformity etc., electrohydrodynamics is printed to the functional device of large area micro-nano structure, due to substrate surface Out-of-flatness, cause the change of jetting height, thus affect the Accurate Shaping of functional device, but, existing electrohydrodynamic Printing technique is in the device fabrication process of large area micro-nano structure, and effective side is not taked in the change to jetting height Method, affects the structure and morphology of large area micro-nano device, thus affects its performance.

In sum, the preparation of large area micro-nano structure is restricted by existing electrohydrodynamics printing technique, its Structure and morphology is difficult to be further enhanced, and the most existing electrohydrodynamics printing technique is difficult to meet large area micro-nano knot The requirement of structure device Accurate Shaping.

Summary of the invention

The Accurate Shaping of large area micro-nano structure device it is difficult to for existing electrohydrodynamics printing technique, this Invention proposes the jetting height error compensating method that a kind of large area micro-nano structure electrohydrodynamics prints.

The technical scheme is that the jetting height error that a kind of large area micro-nano structure electrohydrodynamics prints is mended Compensation method, its step is as follows:

(1) quantity of substrate obligatory point is determined；

(2) the Z axis coordinate figure z of substrate obligatory point is obtained_i；

(3) X/Y plane quadrilateral mesh is built；

(4) the Z axis coordinate figure z on X/Y plane quadrilateral mesh summit is determined_j；

(5) three-dimension curved surface of substrate print area is built；

(6) the Z axis coordinate figure z of current printing substrate position is obtained_c；

(7) jetting height that electrohydrodynamics prints is compensated.

(1) according to electrohydrodynamics print area in, determine the quantity of obligatory point, in the X/Y plane of substrate, determine X Obligatory point quantity on axle and Y-axis is respectively N and M, N >=3, M >=3, and the quantity obtaining obligatory point is N × M, moves according to electrofluid The displacement of the motion platform of mechanics device respectively obtains the X-axis of each obligatory point and the position of Y-axis, its N × M obligatory point Coordinate at X/Y plane is (x_i,y_i)_N×M, wherein, 1≤i≤N × M.

(2) use measurement detection equipment that N × M obligatory point on the X/Y plane of substrate is carried out in situ detection Z axis position in Putting, the Z axis coordinate figure obtaining N × M obligatory point is z_i, wherein, 1≤i≤N × M.

(3) according to electrohydrodynamics print area in, the quadrilateral mesh of X/Y plane, the net in X-axis and Y-axis are built Lattice quantity is respectively S and T, thus the plane quadrilateral grid number obtained on X/Y plane is S × T, and obtains the flat of each mesh point Areal coordinate is (x_j,y_j)_S×T, wherein 1≤j≤S × T.

(4) N × M obligatory point D coordinates value (x according to substrate in_i,y_i,z_i)_N×M, determine plane quadrilateral grid The Z axis coordinate figure z on summit_j, its detailed process is as follows:

(1) according to the D coordinates value (x of N × M obligatory point of substrate_i,y_i,z_i)_N×M, it is thus achieved that system of linear equations:

$\left\{\begin{array}{c}{c}_1\mathrm{\δ}(P_1-P_1)+c_2\mathrm{\δ}(P_1-P_2)+...c_{N\×M}\mathrm{\δ}(P_1-P_{N\×M})=z_1\\ c_1\mathrm{\δ}(P_2-P_1)+c_2\mathrm{\δ}(P_2-P_2)+...c_{N\×M}\mathrm{\δ}(P_2-P_{N\×M})=z_2\\ .\\ .\\ .\\ c_1\mathrm{\δ}(P_i-P_1)+c_2\mathrm{\δ}(P_i-P_2)+...c_{N\×M}\mathrm{\δ}(P_i-P_{N\×M})=z_i\\ .\\ .\\ .\\ c_1\mathrm{\δ}(P_{N\×M}-P_1)+c_2\mathrm{\δ}(P_{N\×M}-P_2)+...c_{N\×M}\mathrm{\δ}(P_{N\×M}-P_{N\×M})=z_{N\×M}\end{array}\right.,$

Wherein, P_i-P_j, i, j=1,2 ..., N × M, for distance between obligatory point on X/Y plane, and

δ(P_i-P_j)=| P_i-P_j|²[(ln|P_i-P_j|-1)], c_iFor linear side The coefficient of journey group；

(2) from (1), obtain the coefficient c of system of linear equations_i, i=1,2 ..., N × M；

(3) the Z axis coordinate figure z of plane quadrilateral grid vertex is obtained_j:

z_j=c₁δ(P_j-P₁)+c₂δ(P_j-P₂)+…c_N×Mδ(P_j-P_N×M), wherein, j=1,2 ..., S × T.

(5) D coordinates value (x according to plane quadrilateral grid vertex in_j,y_j,z_j)_S×T, depend on respectively along X, Y-direction Secondary connection, constitutes the three-dimension curved surface of the substrate spray printing area of corner grid.

(6) the Z axis coordinate figure z of current printing substrate position is obtained in_c, comprise the following steps:

A, determine substrate that current flow body dynamics the prints position in X/Y plane, judge currently to beat in X/Y plane The plane quadrilateral grid at print place, position,

B, four summits according to the plane quadrilateral grid at current print position place, it is thus achieved that current printing substrate position Z axis coordinate figure z_c, utilize substrate that current flow body dynamics the prints position in X/Y plane and plane quadrilateral grid Distance between summit is as weights, the Z axis coordinate figure z to plane quadrilateral grid vertex_jIt is weighted average, obtains current The Z axis coordinate figure z of printing substrate position_c:

Wherein z_cFor the Z axis coordinate figure of current printing substrate position, z_f、z_s、z_tWith z_lIt is respectively the Z axis coordinate figure on four summits of the plane quadrilateral grid at current print position place, d_f、d_s、d_tAnd d_lRespectively Four summit z for current printing substrate position Yu the plane quadrilateral grid at current print position place_f、z_s、z_tAnd z_lBetween Distance.

(7) jetting height that electrohydrodynamics prints is compensated in, according to the Z axis coordinate figure z of current printing substrate_c, really Determine the compensation jetting height that electrohydrodynamics prints: H₂=H₁+z_c,

Wherein H₂For the compensation jetting height of current printing substrate position, H₁Original injection for current printing substrate position Highly, z_cZ axis coordinate figure for current printing substrate position.

The present invention breaks through existing electrohydrodynamics printing technique to the Accurate Shaping of large area micro-nano structure device Limit, it is achieved the inkjet printing of the micro-nano device of large area structure and the preparation of micro nano structure device.

Accompanying drawing explanation

Fig. 1 is the FB(flow block) of the present invention.

Fig. 2 is the schematic diagram of three-dimension curved surface.

Detailed description of the invention

Below for accompanying drawing, embodiments of the invention are described further:

As it is shown in figure 1, the jetting height error compensating method that a kind of large area micro-nano structure electrohydrodynamics prints, bag Include following steps:

1, the quantity of substrate obligatory point is determined.

According to electrohydrodynamics print area, determine the quantity of obligatory point, in the X/Y plane of substrate, determine X-axis and Y Obligatory point quantity on axle is respectively N and M, General N >=3, M >=3, and print area is the biggest, and the value of N and M is the biggest, is retrained The quantity of point is N × M, respectively obtains the X of each obligatory point according to the displacement of the motion platform of electrohydrodynamics device Axle and the position of Y-axis, its N × M obligatory point is (x at the coordinate of X/Y plane_i,y_i)_N×M, wherein, 1≤i≤N × M.

2, the Z axis coordinate figure of substrate obligatory point is determined.

Use measurement detection equipment that N × M obligatory point on the X/Y plane of substrate is carried out in situ detection Z axis position, Z axis coordinate figure to N × M obligatory point is z_i, wherein, 1≤i≤N × M.

3, X/Y plane quadrilateral mesh is built.

According to electrohydrodynamics print area, build the quadrilateral mesh of X/Y plane, if the number of grid in X and Y-axis It is respectively S and T, thus the plane quadrilateral grid number obtained on X/Y plane is S × T, and obtain the plane coordinates of each mesh point For (x_j,y_j)_S×T, wherein, 1≤j≤S × T.

4, the Z axis coordinate figure of plane quadrilateral grid vertex is determined.

N × M the obligatory point D coordinates value (x according to substrate_i,y_i,z_i)_N×M, determine the Z of plane quadrilateral grid vertex Axial coordinate value, it is as follows that it implements process:

(1) according to the D coordinates value (x of N × M obligatory point of substrate_i,y_i,z_i)_N×M, composition system of linear equations is:

$\left\{\begin{array}{c}{c}_1\mathrm{\δ}(P_1-P_1)+c_2\mathrm{\δ}(P_1-P_2)+...c_{N\×M}\mathrm{\δ}(P_1-P_{N\×M})=z_1\\ c_1\mathrm{\δ}(P_2-P_1)+c_2\mathrm{\δ}(P_2-P_2)+...c_{N\×M}\mathrm{\δ}(P_2-P_{N\×M})=z_2\\ .\\ .\\ .\\ c_1\mathrm{\δ}(P_i-P_1)+c_2\mathrm{\δ}(P_i-P_2)+...c_{N\×M}\mathrm{\δ}(P_i-P_{N\×M})=z_i\\ .\\ .\\ .\\ c_1\mathrm{\δ}(P_{N\×M}-P_1)+c_2\mathrm{\δ}(P_{N\×M}-P_2)+...c_{N\×M}\mathrm{\δ}(P_{N\×M}-P_{N\×M})=z_{N\×M}\end{array}\right.---\left(1\right)$

In formula, P_i-P_j, i, j=1,2 ..., N × M, for distance between obligatory point on X/Y plane, meet:

$P_i-P_j=\sqrt{{(x_i-x_j)}^2+{(y_i-y_j)}^2}---\left(2\right)$

δ(P_i-P_j)=| P_i-P_j|²[(ln|P_i-P_j|-1)], c_iCoefficient for system of linear equations.

(2) formula (1) is solved, obtain the coefficient c of system of linear equations_i, i=1,2 ..., N × M.

(3) the Z axis coordinate figure on Calculation Plane quadrilateral mesh summit, its relational expression is represented by:

z_j=c₁δ(P_j-P₁)+c₂δ(P_j-P₂)+…c_N×Mδ(P_j-P_N×M) (3)

In formula, j=1,2 ..., S × T.

5, the three-dimension curved surface of substrate print area is built.

As in figure 2 it is shown, according to the D coordinates value (x of plane quadrilateral grid vertex_j,y_j,z_j)_S×T, respectively along X, Y side To being sequentially connected with, constitute the three-dimension curved surface of the substrate spray printing area of corner grid.

6, calculating the Z axis coordinate figure of current printing substrate position, it is as follows that it implements process:

(1) determine substrate that current flow body dynamics the prints position in X/Y plane, judge current in X/Y plane The plane quadrilateral grid at print position place.

(2) according to four summits of the plane quadrilateral grid at current print position place, the Z of current printing substrate is calculated Axial coordinate value, utilize substrate that current flow body dynamics the prints position and plane quadrilateral grid vertex in X/Y plane it Between distance as weights, be weighted averagely, obtaining current printing substrate to the Z axis coordinate figure of plane quadrilateral grid vertex The Z axis coordinate figure of position, its computing formula is as follows:

$z_c=\frac{z_f{d}_f+z_s{d}_s+z_t{d}_t+z_l{d}_l}{d_f+d_s+d_t+d_l}---\left(4\right)$

Z in formula_cFor the Z axis coordinate figure of current printing substrate position, z_f、z_s、z_tAnd z_lIt is respectively current print position place The Z axis coordinate figure on four summits of plane quadrilateral grid, d_f、d_s、d_tAnd d_lIt is respectively current printing substrate position with current Four summit z of the plane quadrilateral grid at print position place_f、z_s、z_tAnd z_lBetween distance.

7, according to the Z axis coordinate figure of current printing substrate position, the jetting height compensating electrohydrodynamics printing is:

H₂=H₁+z_c (5)

H in formula₂For the compensation jetting height of current printing substrate position, H₁Original injection for current printing substrate position Highly, z_cZ axis coordinate figure for current printing substrate position.

Embodiment is not construed as the restriction invented, but any spiritual improvements introduced based on the present invention, all Ying Ben Within the protection domain of invention.

Claims (8)

1. the jetting height error compensating method that a large area micro-nano structure electrohydrodynamics prints, it is characterised in that: its Step is as follows:

(1) quantity of substrate obligatory point is determined；

(2) the Z axis coordinate figure z of substrate obligatory point is obtained_i；

(3) X/Y plane quadrilateral mesh is built；

(4) the Z axis coordinate figure z on X/Y plane quadrilateral mesh summit is determined_j；

(5) three-dimension curved surface of substrate print area is built；

(6) the Z axis coordinate figure z of current printing substrate position is obtained_c；

(7) jetting height that electrohydrodynamics prints is compensated.

The jetting height error compensation side that large area micro-nano structure electrohydrodynamics the most according to claim 1 prints Method, it is characterised in that: according to electrohydrodynamics print area in (one), determine the quantity of obligatory point, at the X/Y plane of substrate Inside determining that the obligatory point quantity in X-axis and Y-axis is respectively N and M, N >=3, M >=3, the quantity obtaining obligatory point is N × M, according to The displacement of the motion platform of electrohydrodynamics device respectively obtains the X-axis of each obligatory point and the position of Y-axis, its N × M Individual obligatory point is (x at the coordinate of X/Y plane_i,y_i)_N×M, wherein, 1≤i≤N × M.

The jetting height error compensation side that large area micro-nano structure electrohydrodynamics the most according to claim 2 prints Method, it is characterised in that: (two) use measurement detection equipment N × M obligatory point on the X/Y plane of substrate is carried out in situ and examine Surveying Z axis position, the Z axis coordinate figure obtaining N × M obligatory point is z_i, wherein, 1≤i≤N × M.

The jetting height error compensation side that large area micro-nano structure electrohydrodynamics the most according to claim 3 prints Method, it is characterised in that: according to electrohydrodynamics print area in (three), build the quadrilateral mesh of X/Y plane, X-axis and Y-axis On number of grid be respectively S and T, thus the plane quadrilateral grid number obtained on X/Y plane is S × T, and obtains each grid The plane coordinates of point is (x_j,y_j)_S×T, wherein 1≤j≤S × T.

The jetting height error compensation side that large area micro-nano structure electrohydrodynamics the most according to claim 4 prints Method, it is characterised in that: N × M obligatory point D coordinates value (x according to substrate in (four)_i,y_i,z_i)_N×M, determine plane four limit The Z axis coordinate figure z of shape grid vertex_j, its detailed process is as follows:

(1) according to the D coordinates value (x of N × M obligatory point of substrate_i,y_i,z_i)_N×M, it is thus achieved that system of linear equations:

$\left\{\begin{array}{c}{c}_1\mathrm{\δ}(P_1-P_1)+c_2\mathrm{\δ}(P_1-P_2)+...c_{N\×M}\mathrm{\δ}(P_1-P_{N\×M})=z_1\\ c_1\mathrm{\δ}(P_2-P_1)+c_2\mathrm{\δ}(P_2-P_2)+...c_{N\×M}\mathrm{\δ}(P_2-P_{N\×M})=z_2\\ .\\ .\\ .\\ c_1\mathrm{\δ}(P_i-P_1)+c_2\mathrm{\δ}(P_i-P_2)+...c_{N\×M}\mathrm{\δ}(P_i-P_{N\×M})=z_i\\ .\\ .\\ .\\ c_1\mathrm{\δ}(P_{N\×M}-P_1)+c_2\mathrm{\δ}(P_{N\×M}-P_2)+...c_{N\×M}\mathrm{\δ}(P_{N\×M}-P_{N\×M})=z_{N\×M}\end{array}\right.,$

Wherein, P_i-P_j, i, j=1,2 ..., N × M, for distance between obligatory point on X/Y plane, and

δ(P_i-P_j)=| P_i-P_j|²[(ln|P_i-P_j|-1)], c_iFor system of linear equations Coefficient；

(2) from (1), obtain the coefficient c of system of linear equations_i, i=1,2 ..., N × M；

(3) the Z axis coordinate figure z of plane quadrilateral grid vertex is obtained_j:

z_j=c₁δ(P_j-P₁)+c₂δ(P_j-P₂)+…c_N×Mδ(P_j-P_N×M), wherein, j=1,2 ..., S × T.

The jetting height error compensation side that large area micro-nano structure electrohydrodynamics the most according to claim 5 prints Method, it is characterised in that: D coordinates value (x according to plane quadrilateral grid vertex in (five)_j, y_j,z_j)_S×T, respectively along X, Y Direction is sequentially connected with, and constitutes the three-dimension curved surface of the substrate spray printing area of corner grid.

The jetting height error compensation side that large area micro-nano structure electrohydrodynamics the most according to claim 6 prints Method, it is characterised in that: (six) obtain the Z axis coordinate figure z of current printing substrate position_c, comprise the following steps:

A, determine substrate that current flow body dynamics the prints position in X/Y plane, judge currently to print position in X/Y plane Put the plane quadrilateral grid at place,

B, four summits according to the plane quadrilateral grid at current print position place, it is thus achieved that the Z of current printing substrate position Axial coordinate value z_c, utilize substrate that current flow body dynamics the prints position in X/Y plane and plane quadrilateral grid vertex Between distance as weights, the Z axis coordinate figure z to plane quadrilateral grid vertex_jIt is weighted average, is currently printed The Z axis coordinate figure z of substrate position_c:

Wherein z_cFor the Z axis coordinate figure of current printing substrate position, z_f、z_s、z_tAnd z_lPoint Not Wei the Z axis coordinate figure on four summits of plane quadrilateral grid at current print position place, d_f、d_s、d_tAnd d_lIt is respectively and works as Four summit z of the plane quadrilateral grid at front printing substrate position and current print position place_f、z_s、z_tAnd z_lBetween away from From.

The jetting height error compensation side that large area micro-nano structure electrohydrodynamics the most according to claim 7 prints Method, it is characterised in that: (seven) compensate the jetting height that electrohydrodynamics prints, according to the Z axis coordinate of current printing substrate Value z_c, determine the compensation jetting height that electrohydrodynamics prints: H₂=H₁+z_c,

Wherein H₂For the compensation jetting height of current printing substrate position, H₁For the original jetting height of current printing substrate position, z_cZ axis coordinate figure for current printing substrate position.