CN106257626A - Schottky device manufacture method and schottky device - Google Patents
Schottky device manufacture method and schottky device Download PDFInfo
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- CN106257626A CN106257626A CN201510346361.6A CN201510346361A CN106257626A CN 106257626 A CN106257626 A CN 106257626A CN 201510346361 A CN201510346361 A CN 201510346361A CN 106257626 A CN106257626 A CN 106257626A
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 53
- 229920005591 polysilicon Polymers 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 19
- 150000002500 ions Chemical class 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 102000004129 N-Type Calcium Channels Human genes 0.000 abstract description 7
- 108090000699 N-Type Calcium Channels Proteins 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 238000000407 epitaxy Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 108010022579 ATP dependent 26S protease Proteins 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention provides a kind of schottky device manufacture method and schottky device, and wherein method includes: forms epitaxial layer on substrate, offers groove in described epitaxial layer；Form grid oxide layer and polysilicon in the trench；The top of described epitaxial layer is carried out ion implanting, forms body district and be positioned at the source region above described body district；Make surface metal-layer, wherein, between described surface metal-layer and described source region, form Schottky contacts.The schottky device manufacture method of present invention offer and schottky device, when device forward conduction, in body district is positioned at the region of below source region, close polysilicon, transoid can become N-type channel, and therefore the forward conduction voltage of device is relatively low；Further, when device is reverse-biased, the most there is not diffusion in the PN junction between body district and epitaxial layer, therefore device is the most pressure higher.
Description
Technical field
The present invention relates to field of semiconductor technology, particularly relate to a kind of schottky device manufacture method and Xiao
Special base device.
Background technology
Schottky device has that reverse recovery time is shorter, bear the advantages such as current capacity is bigger, by extensively
General apply at high-frequency inverter, digital product, electromotor, television set, satellite receiver, guided missile
And the field such as aircraft.
Fig. 1 is the structural representation of schottky device in prior art.As it is shown in figure 1, serve as a contrast in N-type
It is formed with N-type epitaxy layer 2 at the end 1, N-type epitaxy layer 2 is formed p-type post 3, at p-type post 3
Be formed above surface metal-layer 4, between surface metal-layer 4 and N-type epitaxy layer 2 formed Xiao Te
Base contacts, and forms PN junction between p-type post 3 and N-type epitaxy layer 2.When device forward conduction,
Electric current flows to N-type substrate 1 from surface metal-layer 4, and the now pressure drop of device includes two parts: Xiao Te
The pressure drop of base potential barrier conducting and the pressure drop of PN junction, therefore, the forward conduction voltage drop of device is bigger；
When device is reverse, rely primarily on PN junction pressure, due to p-type ion and N-type ion in PN junction
Between there is phase counterdiffusion, therefore device is pressure relatively low.
Summary of the invention
The present invention provides a kind of schottky device manufacture method and schottky device, in order to solve existing skill
In art, the normally pressure drop of schottky device is relatively big and reverse pressure relatively low technical problem.
The present invention provides a kind of schottky device manufacture method, including:
Substrate is formed epitaxial layer, in described epitaxial layer, offers groove；
Form grid oxide layer and polysilicon in the trench；
The top of described epitaxial layer is carried out ion implanting, forms body district and be positioned at above described body district
Source region；
Make surface metal-layer, wherein, between described surface metal-layer and described source region, form Schottky
Contact.
Further, described formation grid oxide layer and polysilicon in the trench, specifically include:
At the bottom of described groove and disposed on sidewalls grid oxide layer, wherein said grid oxide layer takes the shape of the letter U；
Polysilicon is filled in described grid oxide layer.
Further, the described top to described epitaxial layer carries out ion implanting, forms body district and is positioned at
Source region above described body district, specifically includes:
Under the sheltering of described polysilicon, the top of described epitaxial layer is carried out p-type ion implanting, and
Complete to drive in process, to form described body district；
The top in described body district is carried out N-type ion implanting, and completes to drive in process, described to be formed
Source region, and described source region is cut through.
Further, before offering groove in described epitaxial layer, also include: on said epitaxial layer there
Form oxide layer；
Accordingly, the upper surface of the described grid oxide layer formed in the trench is upper with described epitaxial layer
Surface flushes；The upper surface of described polysilicon and the upper surface flush of described oxide layer；
After forming grid oxide layer and polysilicon in the trench, also include: remove described oxide layer.
Further, described described source region is cut through, specifically includes:
Silicon oxide layer is formed above described source region and in the both sides of described polysilicon；
Under the sheltering of described silicon oxide layer, described source region is carried out hole etching, to realize described source region
Cut through.
The present invention also provides for a kind of schottky device, including: outside substrate, formation over the substrate
Prolong floor, form body district on said epitaxial layer there, the source region being formed in described body district, surface metal
Layer；
Wherein, offering groove in described epitaxial layer, described groove passes described body district and described source region,
And it is formed with grid oxide layer and polysilicon in described groove；
Schottky contacts is formed between described surface metal-layer and described source region.
Further, described grid oxide layer is formed on bottom and the sidewall of described groove；Described grid oxide layer
Take the shape of the letter U；
Described polysilicon it is filled with inside described grid oxide layer.
Further, described source region offers through hole；Described body district connects with described surface metal-layer
Touch.
Further, the upper surface of described grid oxide layer and the upper surface flush of described source region；Described polycrystalline
The upper surface of silicon is higher than the upper surface of described source region.
Further, it is formed with silicon oxide layer above described source region and in the both sides of described polysilicon；
The side of described silicon oxide layer flushes with the side of described source region.
In the schottky device manufacture method of present invention offer and schottky device, described epitaxial layer is opened
If groove, described groove is formed grid oxide layer and polysilicon, described epitaxial layer is formed body district
With the source region being positioned at above described body district, described polysilicon is formed with surface metal-layer, described table
Schottky contacts is formed, when device forward conduction, in body position between face metal level and described source region
In the region of below source region, close polysilicon, transoid can become N-type channel, therefore device is just
Relatively low to conducting voltage；Further, when device is reverse-biased, the PN junction between body district and epitaxial layer is at horizontal stroke
The most there is not diffusion, therefore device is the most pressure higher.
Accompanying drawing explanation
Fig. 1 is the structural representation of schottky device in prior art；
The flow chart of the schottky device manufacture method that Fig. 2 provides for the embodiment of the present invention one；
After the schottky device manufacture method that Fig. 3 provides for the embodiment of the present invention one forms oxide layer
Structural representation；
The schottky device manufacture method that Fig. 4 provides for the embodiment of the present invention one is formed the knot after groove
Structure schematic diagram；
After the schottky device manufacture method that Fig. 5 provides for the embodiment of the present invention one forms grid oxide layer
Structural representation；
After the schottky device manufacture method that Fig. 6 provides for the embodiment of the present invention one forms polysilicon
Structural representation；
The schottky device manufacture method that Fig. 7 provides for the embodiment of the present invention one is formed the knot behind body district
Structure schematic diagram；
The schottky device manufacture method that Fig. 8 provides for the embodiment of the present invention one is formed the knot after source region
Structure schematic diagram；
After the schottky device manufacture method that Fig. 9 provides for the embodiment of the present invention one forms silicon oxide layer
Structural representation；
After source region is cut through by the schottky device manufacture method that Figure 10 provides for the embodiment of the present invention one
Structural representation；
The schottky device manufacture method that Figure 11 provides for the embodiment of the present invention one is formed surface metal
Structural representation after Ceng.
Reference:
1-N type substrate 2-N type epitaxial layer 3-P type post 4-surface metal-layer
5-oxide layer 6-groove 7-grid oxide layer 7 8-polysilicon
9-body district 10-source region 11-silicon oxide layer
Detailed description of the invention
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearer, below in conjunction with this
Accompanying drawing in inventive embodiments, clearly and completely retouches the technical scheme in the embodiment of the present invention
State, it is clear that described embodiment is a part of embodiment of the present invention rather than whole embodiments.
Based on the embodiment in the present invention, those of ordinary skill in the art are not making creative work premise
Lower obtained every other embodiment, broadly falls into the scope of protection of the invention.
Embodiment one
The embodiment of the present invention one provides a kind of schottky device manufacture method.Fig. 2 is the embodiment of the present invention
The flow chart of the one schottky device manufacture method provided.As in figure 2 it is shown, Xiao that the present embodiment provides
Special base device manufacture method, may include that
Step 101, on substrate 1 formation epitaxial layer 2, offer groove 6 in described epitaxial layer 2.
Specifically, the substrate 1 in the present embodiment, can be N-type substrate, accordingly, epitaxial layer 2
It can be N-type epitaxy layer.Described epitaxial layer 2 is carried out photoetching, etching technics, can be formed described
Groove 6.
In this step, it is preferred that before offering groove 6 in described epitaxial layer 2, it is also possible to
Including: forming oxide layer 5 on the epitaxial layer 2, described oxide layer 5 is made up of silicon dioxide.
The schottky device manufacture method that Fig. 3 provides for the embodiment of the present invention one is formed the knot after oxide layer 5
Structure schematic diagram.First on epitaxial layer 2, layer of oxide layer 5 is formed before offering groove 6, it is therefore an objective to
In order to conveniently etch source region 10 in subsequent step.After forming described oxide layer 5, can be to institute
State oxide layer 5 and carry out photoetching, etching, form described groove 6.Fig. 4 is that the embodiment of the present invention one carries
The schottky device manufacture method of confession is formed the structural representation after groove 6.Certainly, in this step
In, it is also possible to form oxide layer 5, directly shape in described epitaxial layer 2 the most on the epitaxial layer 2
Become described groove 6.
Step 102, in described groove 6, form grid oxide layer 7 and polysilicon 8.
Specifically, described groove 6 is formed grid oxide layer 7 and polysilicon 8, may include that
The bottom of described groove 6 and disposed on sidewalls grid oxide layer 7, wherein said grid oxide layer 7 takes the shape of the letter U；?
Described grid oxide layer 7 is filled polysilicon 8.Grid oxide layer 7 is capable of polysilicon 8 and epitaxial layer 2
Isolation, after forming body district and source region in subsequent step, additionally it is possible to realizes polysilicon 8 and body district, source
The isolation in district, it is ensured that proper device operation.
After the schottky device manufacture method that Fig. 5 provides for the embodiment of the present invention one forms grid oxide layer 7
Structural representation.The thickness of described grid oxide layer 7 can be less than 100 angstroms, it is possible to device is effectively ensured
Dynamic property.The schottky device manufacture method that Fig. 6 provides for the embodiment of the present invention one is formed many
Structural representation after crystal silicon 8.Described polysilicon 8 can be N-type polycrystalline, is filling described polycrystalline
After silicon 8, complete returning of described polysilicon 8 and carve.
If defining oxide layer 5 in a step 101, the most in this step, shape in described groove 6
The upper surface of the described grid oxide layer 7 become and the upper surface flush of described epitaxial layer 2, described polysilicon 8
The upper surface flush of upper surface and described oxide layer 5；In described groove 6 formed grid oxide layer 7 with
And after polysilicon 8, in addition it is also necessary to remove described oxide layer 5.If there is no shape in described step 101
Becoming oxide layer 5, the most in this step, the upper surface of described grid oxide layer 7 and described polysilicon 8 is permissible
All with the upper surface flush of described epitaxial layer 2.
Step 103, top to described epitaxial layer 2 carry out ion implanting, form body district 9 and are positioned at
Source region 10 above described body district 9.
After forming grid oxide layer 7 and polysilicon 8, body district 9 and the making of source region 10 can be carried out.
Specifically, the top of described epitaxial layer 2 is carried out ion implanting, forms body district 9 and be positioned at described body
Source region 10 above district 9, may include that under the sheltering of described polysilicon 8, to described epitaxial layer
The top of 2 carries out p-type ion implanting, and completes to drive in process, to form described body district 9；To institute
The top in Shu Ti district 9 carries out N-type ion implanting, and completes to drive in process, to form described source region 10,
And described source region 10 is cut through.
After the schottky device manufacture method that Fig. 7 provides for the embodiment of the present invention one forms body district 9
Structural representation.The schottky device manufacture method that Fig. 8 provides for the embodiment of the present invention one is formed source
Structural representation behind district 10.After forming described source region 10, it is also possible to by described source region 10
Cut through.Specifically, if defining oxide layer 5 in a step 101, the most described by described source region 10
Cut through, specifically may include that above described source region 10 and in the both sides shape of described polysilicon 8
Become silicon oxide layer 11；Under the sheltering of described silicon oxide layer 11, described source region 10 is carried out hole etching,
To realize cutting through of described source region 10.
The schottky device manufacture method that Fig. 9 provides for the embodiment of the present invention one is formed silicon oxide layer
Structural representation after 11.Described silicon oxide layer 11 is made up of silicon dioxide, in described source region 10
One layer of silicon oxide of upper deposit, then completes back to carve, i.e. forms described silicon oxide layer 11.Figure 10 is this
Structural representation after source region 10 being cut through in the schottky device manufacture method that inventive embodiments one provides
Figure.
If step 101 is formed without oxide layer 5, the most in this step, can be existing by other
Mode complete source region 10 and cut through.After source region 10 being cut through, source region 10 and body district 9 can be reduced
Between contact area, reduce device forward conduction voltage drop.
Step 104, making surface metal-layer 4, wherein, described surface metal-layer 4 and described source region
Schottky contacts is formed between 10.
The schottky device manufacture method that Figure 11 provides for the embodiment of the present invention one is formed surface metal
Structural representation after layer 4.If in step 103 source region 10 to have been carried out hole etching, then described
Surface metal-layer 4 is formed at described polysilicon 8 and the top in described body district 9.If in step 103
Source region 10 does not carries out hole etching, and the most described surface metal-layer 4 is formed at described polysilicon 8 and institute
State the top of source region 10.
In actual application, in the case of device does not turns on, PXing Ti district 9 and N-type source region
PN junction is defined between 10；When surface metal-layer 4 connects positive voltage, due to polysilicon 8 and surface
The same current potential of metal level 4, therefore, is positioned at below N-type source region 10, near many in PXing Ti district 9
In the region of crystal silicon 8, transoid can become N-type channel, electric current flows through N-type channel from surface metal-layer 4
Rear arrival substrate 1, device forward conduction.Due to subregion in the middle part of PXing Ti district 9 in the case of forward conduction
Territory defines N-type channel, and therefore, the forward conduction voltage of device is relatively low.
When device is reverse-biased, rely primarily on the PN junction between PXing Ti district 9 and N-type epitaxy layer 2
Pressure, owing to this PN junction is to there is not diffusion in the horizontal, therefore, lateral breakdown voltage is higher,
And then it is pressure to improve device, simultaneously as the reverse leakage of this PN junction can be by surface Schottky gesture
Base is blocked, and therefore, the reverse leakage of device is the least.
In the schottky device manufacture method that the present embodiment provides, first offer in described epitaxial layer 2
Groove 6, and in described groove 6, form grid oxide layer 7 and polysilicon 8, then to described extension
The top of layer 2 carries out ion implanting, forms body district 9 and is positioned at the source region 10 above described body district 9,
Finally complete the making of surface metal-layer 4, wherein, described surface metal-layer 4 and described source region 10
Between formed Schottky contacts, when device forward conduction, be positioned at N-type source region 10 in PXing Ti district 9
In the region of lower section, close polysilicon 8, transoid can become N-type channel, the therefore positive guide of device
Energising pressure is relatively low；Further, the PN when device is reverse-biased, between PXing Ti district 9 and N-type epitaxy layer 2
The most there is not diffusion in knot, therefore device is the most pressure higher.
Embodiment two
The embodiment of the present invention two provides a kind of schottky device.Schottky device in the present embodiment, tool
Body may refer to Figure 11.As shown in figure 11, the schottky device in the present embodiment, may include that
Substrate 1, the epitaxial layer 2 being formed on described substrate 1, formed body district 9 on the epitaxial layer 2,
It is formed at the source region 10 in described body district 9, surface metal-layer 4；
Wherein, offering groove in described epitaxial layer 2, described groove is through described body district 9 and described
Grid oxide layer 7 and polysilicon 8 it is formed with in source region 10, and described groove；
Schottky contacts is formed between described surface metal-layer 4 and described source region 10.
In the present embodiment, the 26S Proteasome Structure and Function of each several part is all similar with previous embodiment, the most superfluous
State.Schottky device in the present embodiment, can use the method described in embodiment one to make, it is possible to
To use other method, this is not restricted by the present embodiment.
The schottky device that the present embodiment provides, including: substrate 1, is formed on described substrate 1
Epitaxial layer 2, the source region forming body district 9 on the epitaxial layer 2, being formed in described body district 9
10, surface metal-layer 4；Wherein, offering groove in described epitaxial layer 2, described groove passes institute
It is formed with grid oxide layer 7 and polysilicon 8 in Shu Ti district 9 and described source region 10, and described groove；Described
Schottky contacts is formed between surface metal-layer 4 and described source region 10.When device forward conduction,
In PXing Ti district 9 is positioned at the region of below N-type source region 10, close polysilicon 8, can transoid
Becoming N-type channel, therefore the forward conduction voltage of device is relatively low；Further, when device is reverse-biased, p-type
The most there is not diffusion in the PN junction between body district 9 and N-type epitaxy layer 2, therefore device is anti-
To pressure higher.
Further, described grid oxide layer 7 is formed on bottom and the sidewall of described groove；Described grid oxygen
Layer 7 takes the shape of the letter U；Described grid oxide layer 7 is internal is filled with described polysilicon 8.Described grid oxide layer 7 can
Realize described polysilicon 8 and body district 9, the isolation of source region 10, it is ensured that proper device operation.
Further, the thickness of described grid oxide layer 7 is less than 100 angstroms, it is possible to device dynamic is effectively ensured
State property energy.
Further, described source region 10 offers through hole；Described body district 9 and described surface metal
Layer 4 contacts.Specifically, after described body district 9 forms described source region 10, can be to described
Source region 10 carries out hole etching so that form through hole, described body district 9 upper surface pair in described source region 10
The region answering described through hole contacts with described surface metal-layer 4.Described source region 10 is carried out hole quarter
After erosion, when device forward conduction, it is to avoid form PN between described source region 10 and described body district 9
Knot, reduces the conduction voltage drop of device further.
Further, the upper surface of described grid oxide layer 7 and the upper surface flush of described source region 10；Institute
State the upper surface of polysilicon 8 upper surface higher than described source region 10, above described source region 10 and
The both sides of described polysilicon 8 are formed with silicon oxide layer 11；The side of described silicon oxide layer 11 is with described
The side of source region 10 flushes.Described silicon oxide layer 11 is easy to described source region 10 is carried out hole etching,
Simplify the making step of device, improve the production efficiency of device.
Last it is noted that various embodiments above is only in order to illustrate technical scheme, rather than
It is limited；Although the present invention being described in detail with reference to foregoing embodiments, this area
Those of ordinary skill is it is understood that the technical scheme described in foregoing embodiments still can be entered by it
Row amendment, or the most some or all of technical characteristic is carried out equivalent；And these amendment or
Person replaces, and does not make the essence of appropriate technical solution depart from the model of various embodiments of the present invention technical scheme
Enclose.
Claims (10)
1. a schottky device manufacture method, it is characterised in that including:
Substrate is formed epitaxial layer, in described epitaxial layer, offers groove；
Form grid oxide layer and polysilicon in the trench；
The top of described epitaxial layer is carried out ion implanting, forms body district and be positioned at above described body district
Source region；
Make surface metal-layer, wherein, between described surface metal-layer and described source region, form Schottky
Contact.
Schottky device manufacture method the most according to claim 1, it is characterised in that described
Form grid oxide layer and polysilicon in the trench, specifically include:
At the bottom of described groove and disposed on sidewalls grid oxide layer, wherein said grid oxide layer takes the shape of the letter U；
Polysilicon is filled in described grid oxide layer.
Schottky device manufacture method the most according to claim 2, it is characterised in that described
The top of described epitaxial layer is carried out ion implanting, forms body district and be positioned at the source above described body district
District, specifically includes:
Under the sheltering of described polysilicon, the top of described epitaxial layer is carried out p-type ion implanting, and
Complete to drive in process, to form described body district；
The top in described body district is carried out N-type ion implanting, and completes to drive in process, described to be formed
Source region, and described source region is cut through.
Schottky device manufacture method the most according to claim 3, it is characterised in that in institute
State before epitaxial layer offers groove, also include: form oxide layer on said epitaxial layer there；
Accordingly, the upper surface of the described grid oxide layer formed in the trench is upper with described epitaxial layer
Surface flushes；The upper surface of described polysilicon and the upper surface flush of described oxide layer；
After forming grid oxide layer and polysilicon in the trench, also include: remove described oxide layer.
Schottky device manufacture method the most according to claim 4, it is characterised in that described
Described source region is cut through, specifically includes:
Silicon oxide layer is formed above described source region and in the both sides of described polysilicon；
Under the sheltering of described silicon oxide layer, described source region is carried out hole etching, to realize described source region
Cut through.
6. a schottky device, it is characterised in that including: substrate, formation are over the substrate
Epitaxial layer, form body district on said epitaxial layer there, the source region being formed in described body district, surface
Metal level；
Wherein, offering groove in described epitaxial layer, described groove passes described body district and described source region,
And it is formed with grid oxide layer and polysilicon in described groove；
Schottky contacts is formed between described surface metal-layer and described source region.
Schottky device the most according to claim 6, it is characterised in that described grid oxide layer shape
Become on the bottom and sidewall of described groove；Described grid oxide layer takes the shape of the letter U；
Described polysilicon it is filled with inside described grid oxide layer.
Schottky device the most according to claim 7, it is characterised in that open in described source region
It is provided with through hole；Described body district contacts with described surface metal-layer.
Schottky device the most according to claim 8, it is characterised in that described grid oxide layer
Upper surface and the upper surface flush of described source region；The upper surface of described polysilicon is upper higher than described source region
Surface.
Schottky device the most according to claim 9, it is characterised in that above described source region,
And it is formed with silicon oxide layer in the both sides of described polysilicon；
The side of described silicon oxide layer flushes with the side of described source region.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111146295A (en) * | 2020-02-17 | 2020-05-12 | 捷捷微电(上海)科技有限公司 | Semiconductor power device structure and manufacturing method thereof |
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|---|---|---|---|---|
| EP1420457A1 (en) * | 2002-11-14 | 2004-05-19 | STMicroelectronics S.r.l. | Insulated gate power semiconductor device with Schottky diode and manufacturing method thereof |
| US20140077287A1 (en) * | 2012-09-19 | 2014-03-20 | Vishay-Siliconix | Breakdown voltage blocking device |
| CN103779416A (en) * | 2014-01-20 | 2014-05-07 | 张家港凯思半导体有限公司 | Low VF power MOSFET device and manufacturing method thereof |
| CN103824774A (en) * | 2012-11-16 | 2014-05-28 | 竹懋科技股份有限公司 | Trench-type MOS rectifier and manufacturing method thereof |
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|---|---|---|---|---|
| EP1420457A1 (en) * | 2002-11-14 | 2004-05-19 | STMicroelectronics S.r.l. | Insulated gate power semiconductor device with Schottky diode and manufacturing method thereof |
| US20140077287A1 (en) * | 2012-09-19 | 2014-03-20 | Vishay-Siliconix | Breakdown voltage blocking device |
| CN103824774A (en) * | 2012-11-16 | 2014-05-28 | 竹懋科技股份有限公司 | Trench-type MOS rectifier and manufacturing method thereof |
| CN103779416A (en) * | 2014-01-20 | 2014-05-07 | 张家港凯思半导体有限公司 | Low VF power MOSFET device and manufacturing method thereof |
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| CN111146295A (en) * | 2020-02-17 | 2020-05-12 | 捷捷微电(上海)科技有限公司 | Semiconductor power device structure and manufacturing method thereof |
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