CN106252389B - 用于光收发器件抗干扰的半导体器件 - Google Patents
用于光收发器件抗干扰的半导体器件 Download PDFInfo
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- CN106252389B CN106252389B CN201610802103.9A CN201610802103A CN106252389B CN 106252389 B CN106252389 B CN 106252389B CN 201610802103 A CN201610802103 A CN 201610802103A CN 106252389 B CN106252389 B CN 106252389B
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- heavily doped
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 230000003287 optical effect Effects 0.000 title claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 38
- 239000010703 silicon Substances 0.000 claims abstract description 38
- 238000002955 isolation Methods 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 238000001465 metallisation Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 8
- 239000013307 optical fiber Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000036039 immunity Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
Abstract
Description
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610802103.9A CN106252389B (zh) | 2016-09-05 | 2016-09-05 | 用于光收发器件抗干扰的半导体器件 |
Applications Claiming Priority (1)
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CN201610802103.9A CN106252389B (zh) | 2016-09-05 | 2016-09-05 | 用于光收发器件抗干扰的半导体器件 |
Publications (2)
Publication Number | Publication Date |
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CN106252389A CN106252389A (zh) | 2016-12-21 |
CN106252389B true CN106252389B (zh) | 2023-03-21 |
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CN201610802103.9A Active CN106252389B (zh) | 2016-09-05 | 2016-09-05 | 用于光收发器件抗干扰的半导体器件 |
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CN (1) | CN106252389B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2018040100A1 (zh) | 2016-09-05 | 2018-03-08 | 飞昂通讯科技南通有限公司 | 用于光收发器件抗干扰的半导体器件 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4896194A (en) * | 1987-07-08 | 1990-01-23 | Nec Corporation | Semiconductor device having an integrated circuit formed on a compound semiconductor layer |
CN1420637A (zh) * | 2001-11-15 | 2003-05-28 | 三星电子株式会社 | 收发器无源器件和模块 |
CN103650140A (zh) * | 2011-05-05 | 2014-03-19 | 思科技术公司 | 用于收发器的晶片级封装平台 |
CN103681828A (zh) * | 2012-09-21 | 2014-03-26 | 三星电子株式会社 | 半导体器件及其制造方法 |
CN104347420A (zh) * | 2013-08-07 | 2015-02-11 | 中芯国际集成电路制造(北京)有限公司 | Ldmos器件及其形成方法 |
CN105589139A (zh) * | 2014-11-06 | 2016-05-18 | 新科实业有限公司 | 晶片级封装光电组件以及具有它的收发器模块 |
CN205984995U (zh) * | 2016-09-05 | 2017-02-22 | 飞昂通讯科技南通有限公司 | 用于光收发器件抗干扰的半导体器件 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006229189A (ja) * | 2005-01-19 | 2006-08-31 | Seiko Epson Corp | 光素子およびその製造方法、並びに、光モジュールおよびその製造方法 |
US8399292B2 (en) * | 2010-06-30 | 2013-03-19 | International Business Machines Corporation | Fabricating a semiconductor chip with backside optical vias |
JP5467953B2 (ja) * | 2010-07-07 | 2014-04-09 | 日本オクラロ株式会社 | 半導体光素子、光送信モジュール、光送受信モジュール、及び、光伝送装置 |
KR101974198B1 (ko) * | 2012-07-12 | 2019-04-30 | 에스케이하이닉스 주식회사 | 반도체 소자 및 그 제조 방법 |
US8963336B2 (en) * | 2012-08-03 | 2015-02-24 | Samsung Electronics Co., Ltd. | Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the same |
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2016
- 2016-09-05 CN CN201610802103.9A patent/CN106252389B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4896194A (en) * | 1987-07-08 | 1990-01-23 | Nec Corporation | Semiconductor device having an integrated circuit formed on a compound semiconductor layer |
CN1420637A (zh) * | 2001-11-15 | 2003-05-28 | 三星电子株式会社 | 收发器无源器件和模块 |
CN103650140A (zh) * | 2011-05-05 | 2014-03-19 | 思科技术公司 | 用于收发器的晶片级封装平台 |
CN103681828A (zh) * | 2012-09-21 | 2014-03-26 | 三星电子株式会社 | 半导体器件及其制造方法 |
CN104347420A (zh) * | 2013-08-07 | 2015-02-11 | 中芯国际集成电路制造(北京)有限公司 | Ldmos器件及其形成方法 |
CN105589139A (zh) * | 2014-11-06 | 2016-05-18 | 新科实业有限公司 | 晶片级封装光电组件以及具有它的收发器模块 |
CN205984995U (zh) * | 2016-09-05 | 2017-02-22 | 飞昂通讯科技南通有限公司 | 用于光收发器件抗干扰的半导体器件 |
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