CN106230253B - Boost power translation circuit and control method - Google Patents
Boost power translation circuit and control method Download PDFInfo
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- CN106230253B CN106230253B CN201610816131.6A CN201610816131A CN106230253B CN 106230253 B CN106230253 B CN 106230253B CN 201610816131 A CN201610816131 A CN 201610816131A CN 106230253 B CN106230253 B CN 106230253B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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Abstract
It includes: N number of first switch module, N number of second switch module, N-1 third switch module, N-1 striding capacitance and N-1 precharge unit that the present invention, which provides a kind of boost power translation circuit and control method, the circuit,；N number of second switch module is connected forming circuit with inductor and input power；N number of first switch module is connected forming circuit with load, inductor and input power；Striding capacitance and a third switch module are connected between the second common point between the first common point between first switch module and second switch module；Each striding capacitance precharge unit in parallel；Each precharge unit is used for when the third switch module that striding capacitance connected in parallel connects disconnects and the voltage of striding capacitance is less than preset threshold, striding capacitance is pre-charged, guarantee that the voltage of striding capacitance will not be down to 0V, when to avoid in high-pressure system using boost power translation circuit, the problem of semiconductor devices may be by over-voltage breakdown.
Description
Technical field
The present embodiments relate to electronic circuit technology more particularly to a kind of boost power translation circuit and control methods.
Background technique
Boost circuit is not specific to a kind of physical circuit, refers to a kind of booster circuit, i.e., realizes input one by the circuit
Voltage exports a higher voltage, realizes power conversion, can input referred to as more level more than or equal to three level
Boost circuit.
Fig. 1 a is a kind of more level Boost circuits of striding capacitance, and Fig. 1 b is a kind of more level Boost circuits of striding capacitance
Signal schematic representation is controlled, as shown in Figure 1 a, 1 b, L is inductor, and D1, D2, D5, D6 are diode, and T1, T2 open for semiconductor
Close (can for insulated gate bipolar transistor (English: Insulated Gate Bipolar Transistor, referred to as:
IGBT), metal oxide layer semiconductcor field effect transisto (English: Metal-Oxide-Semiconductor Field-Effect
Transistor, referred to as: MOSFET) etc.), C1, C2 are capacitor, and R is ohmic load, and Vin is input power, and Vout is load
The voltage of resistance.For convenient for analysis, it is assumed that inductor L sensibility reciprocal is infinitely great (i.e. inductive current is kept constant), capacitor C1, C2 capacity
Infinitely great (capacitance remains unchanged).According to the on-off of certain rule control T1, T2 pipe, it is big that output voltage Vout can be realized
In input voltage vin.Specific: 0~D*T stage: T1 is in the conductive state, and T2 is in an off state, and inductive current passes through at this time
Load is flow to by T1, C1, D6, the voltage VL at inductance both ends is that (D5 pressure resistance is equal to Vc voltage 0.5* to Vout-Vc-Vin at this time
Vout；It is that Vout subtracts Vc that T2, which bears voltage, is 0.5*Vout)；D*T~0.5T stage: T1, T2 are in off-state, this
When inductive current via D5, D6 flow to load, the voltage VL at inductance both ends is Vout-Vin at this time, and (T1 pressure resistance is equal to Vc voltage
0.5*Vout；It is that Vout subtracts Vc that T2, which bears voltage, is 0.5*Vout)；0.5T~D*T+0.5T stage: T2 is on shape
State, T1 are in an off state, and inductive current flow to power supply via D5, Vc, T2 at this time, and the voltage VL at inductance both ends is Vc- at this time
Vin, (T1 pressure resistance is equal to Vc voltage 0.5*Vout；It is that Vout subtracts Vc that D6, which bears voltage, is 0.5*Vout)；D*T+0.5T~T
Stage: T1, T2 are in off-state, and inductive current flow to load via D5, D6 at this time, and the voltage VL at inductance both ends is at this time
Vout-Vin, T1 pressure resistance are equal to Vc voltage 0.5*Vout；It is that Vout subtracts Vc that T2, which bears voltage, is 0.5*Vout；In conclusion
The pipe highest pressure resistance of opening the light of all semiconductors is 0.5Vout, other can as procedure described above in control periods.According to
Voltage across the inductor weber conservation principle, i.e. in a duty cycle, the product of voltage across the inductor and time is 0.It can obtain such as
Lower formula: (Vout-Vc-Vin) * D*T+ (Vout-Vin) * (0.5T-D*T)+(Vc-Vin) * 0.2T+ (Vout-Vin) *
(0.5T-D*T)=0；Abbreviation above formula can obtain Vout=Vin/ (1-D), i.e., by the control to T1 and T2, it can be achieved that output voltage
Higher than input voltage.
However, it is 0.5Vout that pressure resistance, which may be selected, in all switching tubes according to above-mentioned analysis Vout > Vin；If flying across electricity
Voltage is not present in appearance, i.e. Vc=0, capacitance voltage 0, then capacitor can be considered as short circuit, i.e. T1 pipe by the two-way short circuit of D1, D5,
T2, D2 bear input voltage vin at this time, and D6 bears pressure resistance Vout-Vin；If Vin < 0.5Vout, T2, D2 bear input voltage
Vin, Vin < 0.5Vout, since D2, T2 pressure resistance are 0.5Vout, D2, T2 will not over-voltage breakdowns；D6 bears pressure resistance Vout-Vin,
Vout-Vin > 0.5Vout, the pressure resistance more than D6, D6 can over-voltage breakdowns；If Vin > 0.5Vout, T2, D2 bear input voltage
Vin, Vin > 0.5Vout, more than D2, T2 pressure resistance 0.5Vout, D2, T2 can over-voltage breakdowns；D6 bears pressure resistance Vout-Vin, Vout-
Vin < 0.5Vout, the pressure resistance no more than D6, D6 will not over-voltage breakdown；By being analyzed above it is found that if striding capacitance voltage Vc is
Zero, then the semiconductor in above scheme is all deposited by the risk of over-voltage breakdown.
Summary of the invention
The embodiment of the present invention provides a kind of boost power translation circuit and control method, for solving current more level electricity
The problem of semiconductor devices may be by over-voltage breakdown when the voltage of striding capacitance is zero in road.
First aspect present invention provides a kind of boost power translation circuit, comprising: N number of first switch module, N number of second open
Close module, N-1 third switch module, N-1 striding capacitance and N-1 precharge unit；N is just whole more than or equal to 2
Number；
N number of second switch module and inductor and input power are sequentially connected in series forming circuit；N number of first switch
Module and load, the input power and the inductor are sequentially connected in series forming circuit；I-th of first switch module and i+1
Between the first common point and i-th of second switch module and i+1 second switch module between a first switch module
A functional circuit in parallel between second common point；Each functional circuit is by a striding capacitance being sequentially connected in series and a third
Switch module composition；I is the positive integer less than N；
The both ends of an each striding capacitance precharge unit in parallel；Each precharge unit is used to fly in connected in parallel
When third switch module across capacitance connection disconnects and the voltage of the striding capacitance is less than preset threshold, fly to described across electricity
Appearance is pre-charged.
The boost power translation circuit that this programme provides, increases switch module on each bridge arm, i.e., above-mentioned to fly with each
Across the concatenated switch module of capacitor, each striding capacitance parallel connection precharge unit is in addition given.It is electric when being converted using the boost power
The system on road is in pre- open state, and precharge unit detects the voltage of corresponding striding capacitance, if the voltage of striding capacitance is full
Sufficient range of set value, then closure with the concatenated third switch module of the striding capacitance, if the voltage of striding capacitance is unsatisfactory for setting
It is worth range, is then charged by corresponding precharge unit to the striding capacitance, until the voltage on the striding capacitance reaches
When setting range, the third switch module is reclosed, after third switch module closing, other first switch modules and the
Two switch modules can carry out normal switch motion according to system command.
In above scheme in the specific implementation, the first switch module includes diode or diodes in parallel against conductivity type
Semiconductor switch；The second switch module includes diodes in parallel semiconductor switch.
The third switch module includes open type switch and ON-OFF control circuit；The ON-OFF control circuit is for controlling
The open type is closed the switch or is opened.
It is filled by above-mentioned setting in circuit and the concatenated third switch module of striding capacitance, and for each striding capacitance
The precharge unit of electricity, guarantees in any working condition of system, the voltage of striding capacitance will not be down to 0V, to avoid
When using boost power translation circuit in high-pressure system, the problem of semiconductor devices may be by over-voltage breakdown.
In addition, the boost power translation circuit further include: N number of inverse conductivity type switching tube；The two of each first switch module
End is connected in parallel an inverse conductivity type switching tube, for realizing synchronous rectification.
Optionally, the inverse conductivity type switching tube includes that metal oxide layer semiconductcor field effect transisto or inverse conductivity type insulate
Grid bipolar junction transistor.
Optionally, the open type switch includes relay, contactor or bidirectional semiconductor switch.
Multilevel converter not only may be implemented in the program, but also can reduce output waveform distortion, avoids half in circuit
The problem of conductor device is by over-voltage breakdown, effectively improves system effectiveness.
Second aspect of the present invention provides a kind of control method of boost power translation circuit, is applied to boost power transformation electricity
Road；The boost power translation circuit includes: N number of first switch module, N number of second switch module, N-1 third switching molding
Block, N-1 striding capacitance and N-1 precharge unit；N is the positive integer more than or equal to 2；
N number of second switch module and inductor and input power are sequentially connected in series forming circuit；N number of first switch
Module and load, the input power and the inductor are sequentially connected in series forming circuit；I-th of first switch module and i+1
Between the first common point and i-th of second switch module and i+1 second switch module between a first switch module
A functional circuit in parallel between second common point；Each functional circuit is by a striding capacitance being sequentially connected in series and a third
Switch module composition；I is the positive integer less than N；The described method includes:
When system is in pre- open state, first electricity at each striding capacitance both ends is detected by each precharge unit
Pressure；
Judge whether the first voltage at each striding capacitance both ends reaches preset threshold；
The first voltage at the first striding capacitance both ends is not up to the preset threshold if it exists, by with described first fly across
First precharge unit of capacitor parallel connection charges to first striding capacitance, until the both ends of first striding capacitance
First voltage reach the preset threshold, then will be closed with the concatenated third switch module of first striding capacitance.
Optionally, the method also includes:
It, will be with the first striding capacitance string if the first voltage at the first striding capacitance both ends reaches the preset threshold
The third switch module of connection is closed.
Optionally, the method also includes:
If N number of second switch module is turned off according to system command, the N-1 third switch module is turned off.
Optionally, the first switch module includes diode or diodes in parallel against conductivity type semiconductor switch；It is described
Second switch module includes diodes in parallel semiconductor switch；
The third switch module includes open type switch and ON-OFF control circuit；The ON-OFF control circuit is for controlling
The open type is closed the switch or is opened.
In addition, the boost power translation circuit further include: N number of inverse conductivity type switching tube；The two of each first switch module
End is connected in parallel an inverse conductivity type switching tube, for realizing synchronous rectification.
Optionally, the inverse conductivity type switching tube includes that metal oxide layer semiconductcor field effect transisto or inverse conductivity type insulate
Grid bipolar junction transistor.
Optionally, the open type switch includes relay, contactor or bidirectional semiconductor switch.
Boost power translation circuit provided by the invention and control method, by the bridge arm of boost power translation circuit
Setting and the concatenated third switch module of striding capacitance, and be each striding capacitance parallel connection precharge unit, in striding capacitance
When voltage is less than preset threshold, disconnects third switch module and striding capacitance is pre-charged, when the voltage of striding capacitance reaches
When preset threshold, it is closed third switch module, guarantees that the voltage of striding capacitance will not be down to 0V, to avoid in high-pressure system
When using boost power translation circuit, the problem of semiconductor devices may be by over-voltage breakdown.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to do one simply to introduce, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without any creative labor, can be with
It obtains other drawings based on these drawings.
Fig. 1 a is a kind of more level Boost circuits of striding capacitance；
Fig. 1 b is a kind of control signal schematic representation of the more level Boost circuits of striding capacitance；
Fig. 2 is the schematic diagram of boost power translation circuit embodiment one provided by the invention；
Fig. 3 is the schematic diagram of one example of boost power translation circuit provided by the invention；
Fig. 4 is the schematic diagram of boost power translation circuit yet another embodiment provided by the invention；
Fig. 5 is the schematic diagram of the another example of boost power translation circuit provided by the invention；
Fig. 6 is the schematic diagram of another connection type of boost power translation circuit provided by the invention；
Fig. 7 is the flow chart of the control method embodiment one of boost power translation circuit provided by the invention.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
Fig. 2 is the schematic diagram of boost power translation circuit embodiment one provided by the invention, as shown in Fig. 2, the present invention mentions
The boost power translation circuit of confession includes: N number of first switch module, N number of second switch module, N-1 third switch module, N-
1 striding capacitance (C1、C2……CN-1) and N-1 precharge unit；N is the positive integer more than or equal to 2；
N number of second switch module and inductor L and input power E are sequentially connected in series forming circuit；Described N number of first opens
It closes module and load (R and C), the input power and the inductor is sequentially connected in series forming circuit；I-th of first switch module
The first common point A (A1, A2 etc. in figure) and i-th of second switch module and i-th between i+1 first switch module
An in parallel functional circuit between the second common point P (P1, P2 etc. in figure) between+1 second switch module (such as:
C1 and first third switch module is connected in figure between A1 and P1, is opened connecting C2 and second third in figure between A2 and P2
Module is closed, and so on)；Each functional circuit is made of a striding capacitance being sequentially connected in series and a third switch module；i
For the positive integer less than N；
The both ends of an each striding capacitance precharge unit in parallel；Each precharge unit is used to fly in connected in parallel
When third switch module across capacitance connection disconnects and the voltage of the striding capacitance is less than preset threshold, fly to described across electricity
Appearance is pre-charged.
In the boost power translation circuit, first switch module and second switch module can be with diode or diodes simultaneously
Join inverse conductivity type semiconductor switch (MOSFET, inverse conductivity type IGBT etc.), wherein second switch module is that diodes in parallel semiconductor is opened
Guan Guan；Input power is sequentially connected in series with inductor and multiple second switch modules, and input power is opened with inductor with multiple first
It closes module and load circuit is sequentially connected in series circuit, it is known that concatenated N number of first switch module and concatenated N number of second is opened
It is in parallel for closing between module, and node A1, the A2 ... between first switch module being sequentially connected in series are the first common point, successively
Node P1, P2 ... between concatenated second switch module are the second common point.In order to guarantee first switch module and second
Semiconductor devices in switch module is not breakdown, and this programme provides multiple third switch modules and precharge unit.Specifically,
Third switch module can be made of the switch of open type and the control circuit of switch, and open type switch includes but not
It is defined in relay, contactor, bidirectional semiconductor switch etc.；Precharge unit is connected to striding capacitance C1……CN-1Both ends, can
It realizes capacitance voltage detection, the function such as charge is carried out to capacitance voltage；Precharge unit in parallel with striding capacitance can be realized.
It can specifically be applied in power conversion system in above-mentioned boost power translation circuit, especially by judging the power
2., normal operating conditions after booting 1., pre- open state four kinds of states: working condition locating for converting system, is closed totally 3., in advance
Machine state, 4., off-mode；The different conditions according to locating for system execute different movements.
When system is in pre- open state, precharge unit detects the voltage of striding capacitance, if striding capacitance voltage meets
Range of set value is then closed third switch module；If striding capacitance voltage is unsatisfactory for range of set value, pass through precharge unit
By capacitance voltage charge value preset value, the third switch module is reclosed；After third switch module closure, first switch module
It can normally be opened according to system command with second switch module, pipe movement, system enters normal operating conditions；
When system is in normal operating conditions, precharge unit and third switch module maintain standing state, without into one
Step movement；
When system is in pre- off state, after first switch module and second switch module are turned off according to system command, the
The shutdown of three switch modules, precharge unit enter off-mode without further movement, system；
When system enters off-mode, precharge unit and third switch module maintain standing state, and nothing is further moved
Make.
Boost power translation circuit provided in this embodiment, by being arranged on the bridge arm of boost power translation circuit and flying
Across the concatenated third switch module of capacitor, and it is each striding capacitance parallel connection precharge unit, is less than in the voltage of striding capacitance
When preset threshold, disconnects third switch module and striding capacitance is pre-charged, when the voltage of striding capacitance reaches preset threshold
When, it is closed third switch module, guarantees that the voltage of striding capacitance will not be down to 0V, to avoid in high-pressure system using boosting
When power conversion circuit, the problem of semiconductor devices may be by over-voltage breakdown.
In above-described embodiment in the specific implementation, the first switch module includes that diode or diodes in parallel are inverse leads
Type semiconductor switch；The second switch module includes diodes in parallel semiconductor switch.The third switch module includes normal
Open switch and ON-OFF control circuit；The ON-OFF control circuit is closed the switch or is opened for controlling the open type.
Boost power translation circuit provided by the invention is illustrated below by several examples.
Fig. 3 is the schematic diagram of one example of boost power translation circuit provided by the invention；As shown in figure 3, in this programme
First switch module is diode D1, D2 ... Dn.Second switch module is diodes in parallel semiconductor switch, and each second opens
Closing module includes MOSFET and diode, for example, T1 and Dn+1, T2 and Dn+2 ..., S1, S2 ... in figure
Sn-1 is equivalent to N-1 third switch module, and C1, C2 ... Cn-1 in figure are equivalent to N-1 striding capacitance, each to fly across electricity
Hold and increases the precharge unit for having pre-charging functions.I.e. in this programme (n is equivalent to the N in embodiment one, for greater than
Positive integer equal to 2).
On the basis of the above embodiments, by taking N is equal to 2 as an example, analytic explanation, figure are carried out to the boost power translation circuit
4 be the schematic diagram of boost power translation circuit yet another embodiment provided by the invention, as shown in figure 4, the part in figure in wire frame 3 is
Boost power translation circuit of the invention forms complete power conversion system together with input power, inductor and load circuit
System.First switch module S1, S2 and second switch module S3, S4 are semiconductor switch module；S1, S2 are diode or two poles
Against conductivity type semiconductor switch (MOSFET, inverse conductivity type IGBT etc.), S3, S4 are diodes in parallel semiconductor switch pipe for pipe parallel connection；Four
A semiconductor switch module is sequentially connected with according to S1, S2, S3, S4's, and node A2 is the common point of S1, S2, and node A3 is
The common point of S2, S3, node A4 are the common point of S3, S4；Input power and inductor are connected to what A3 and S4 was not connect with S3
One end.C1 is striding capacitance, and wire frame 1 is precharge unit, is connected in parallel on the both ends of striding capacitance C1；Wire frame 2 is third switch
Module S.
Third switch module 2 (i.e. S) is made of the switch of open type and the control circuit of switch, and open type switch includes
But be not limited to relay, contactor, bidirectional semiconductor switch etc.；Precharge unit 1 is connected to the both ends striding capacitance C1, can be real
Existing capacitance voltage detection carries out the function such as charge to capacitance voltage；
Precharge unit is linked together with third switch module by concatenated mode, and node A6 is third switching molding
The common point of block, precharge unit and striding capacitance C1；Another node of precharge unit is connected to node A2, third switching molding
Another node of block is connected to node A4；
One end of inductor is connected to node A3, and the other end is connected to the anode of input power；Node A5 connection input electricity
The negative terminal in source and input power；Node A1 is connected to the anode of out-put supply.
In the circuit, system is in pre- open state, and precharge unit detects the voltage of striding capacitance C1, if flying across electricity
Hold C1 voltage and meet range of set value, then closure switch S；If striding capacitance voltage is unsatisfactory for range of set value, pass through preliminary filling
Striding capacitance voltage charge value preset value is reclosed switch S (i.e. third switch module 2) by electric unit；After switch S closure, open
Pass S1, S2, S3, S4 can normally be opened according to system command, pipe acts, and system enters normal operating conditions；
System is in normal operating conditions, and precharge unit and third switch module 2 maintain standing state, without further
Movement；System is in pre- off state, and after S1, S2, S3, S4 are turned off according to system command, third switch module 2 is turned off, preliminary filling
Electric unit enters off-mode without further movement, system；System enters off-mode, is pre-charged ternary and third switching molding
Block 2 maintains standing state, without further movement.
L is inductor, and D1, D2, D5, D6 are diode, and T1, T2 are semiconductor switch, and R is ohmic load, and Vin is input
Power supply, Vout are the voltage of load resistance.For convenient for analysis, it is assumed that inductor L sensibility reciprocal is infinitely great, and (i.e. inductive current keeps permanent
It is fixed), capacitor C, C1 infinite capacity are big (capacitance remains unchanged), according to fig. 1a shown in circuit analytic process, this programme
In also select pressure resistance be 0.5Vout pressure resistance semiconductor switch.
When system is in pre- open state: third switch module 2 (i.e. S) is in an off state, it is assumed that input voltage at this time
Voltage Vin is born jointly for Vin, output voltage Vout, Vin < Vout, S3, S4, each switching tube pressure resistance 0.5Vin, 0.5Vin <
0.5Vout, S3, S4 will not over-voltage breakdowns；S1, S2 bear Vout-Vin jointly, each pipe pressure resistance 0.5 (Vout-Vin), and 0.5
(Vout-Vin) < 0.5Vout, S1, S2 equally will not excessive pressure damages, under pre- open state, all semiconductor switch will not
Damage.
When the systems are operating normally: switch S closure, if being controlled according to control signal shown in Fig. 1 b, T1 is in and leads
Logical state, T2 are in an off state, and inductive current flow to load via T1, S (being equivalent to conducting wire), C1, D6 at this time, at this time inductance
The voltage VL at both ends is Vout-Vc-Vin；T1, T2 are in off-state, and inductive current flow to load via D5, D6 at this time,
The voltage VL at inductance both ends is Vout-Vin at this time；T2 is in the conductive state, and T1 is in an off state, at this time inductive current via
D5, Vc, T2 flow to power supply, and the voltage VL at inductance both ends is Vc-Vin at this time；T1, T2 are in off-state, at this time inductance electricity
It flows through and load is flow to by D5, D6, the voltage VL at inductance both ends is Vout-Vin at this time；Circuit of the present invention works normally, Suo Youban
The pressure resistance of conductor switch is no more than 0.5Vout, and when normal work, all semiconductors equally will not over-voltage breakdown.
When system is in pre- off-mode: because third switch module 2 (i.e. S) is later than switch S1, S2, S3, S4 and is closed
Disconnected, when homologous ray works normally, all semiconductors equally will not over-voltage breakdown.
When system is in off-mode: third switch module 2 disconnects, and homologous ray is in pre- open state, all semiconductors
It equally will not over-voltage breakdown.
By analyzing above it is found that in the various working conditions of system, boost power translation circuit provided by the invention
To avoid the semiconductor over-voltage breakdown problem being likely to occur in existing circuit.
When system worked well, third switch module 2 is in closed state, can be equivalent to short circuit, and pre-charge circuit is motionless
, it can be achieved that multilevel converter when making, therefore working normally, thus it can get multilevel converter using the technology of the present invention and bring receipts
Benefit, including output waveform distortion is reduced, improve system effectiveness etc..
Based on any of the above embodiments, boost power translation circuit further include: N number of inverse conductivity type switching tube；Often
The both ends of a first switch module are connected in parallel an inverse conductivity type switching tube, for realizing synchronous rectification.
Fig. 5 is the schematic diagram of the another example of boost power translation circuit provided by the invention；As shown in figure 5, should, above-mentioned
On the basis of scheme shown in Fig. 4, each first switch wired in parallel connects the switch with third quadrant on state characteristic
Pipe, i.e., against conductivity type switching tube, i.e., the parallel connection of D5, D6 pipe have the switch transistor T 5 of third quadrant on state characteristic, T6, including MOSFET with
And inverse conductivity type IGBT is, it can be achieved that the more level boost of synchronous rectification.
Fig. 6 is the schematic diagram of another connection type of boost power translation circuit provided by the invention, as shown in fig. 6,
Inductor and D5, D6 are connected to the cathode of input power, and according to the forward conduction characteristic of diode, the cathode and inductor of D5 connects
It connects.For N level increasing circuit, can also be attached using this kind of mode.
The boost power translation circuit that any of the above-described embodiment provides is switched by concatenating in striding capacitance one end, and
Increase precharge unit to each striding capacitance, solves to use low-voltage semiconductor device in high-pressure system, part of devices exists
The problem of being unsatisfactory for resistance to pressure request, and while realizing more level output functions, system effectiveness can be greatly improved, reduced
The volume of filter.
Fig. 7 is the flow chart of the control method embodiment one of boost power translation circuit provided by the invention, such as Fig. 7 institute
Show, which is applied to the boost power translation circuit that Fig. 2 is provided to any embodiment shown in fig. 6, circuit theory
Previous embodiment is please referred to connection, details are not described herein, in a particular application, the control method of the boost power translation circuit
Specific implementation step include:
S101: when system is in pre- open state, each striding capacitance both ends are detected by each precharge unit
First voltage.
In this step, which refers to the power conversion system using above-mentioned boost power translation circuit, examines in real time
The state of examining system detects the voltage of each striding capacitance, by precharge unit in the pre- start process of system with Fig. 4
Shown in for embodiment, precharge unit detects the capacitor of striding capacitance C1.
S102: judge whether the first voltage at each striding capacitance both ends reaches preset threshold.
In this step, need to preset the preset threshold of striding capacitance, the preset threshold is minimum under normal circumstances
Voltage, the minimum voltage are to guarantee that the semiconductor devices in circuit will not be by the minimum voltage of over-voltage breakdown, power conversion system
It is compared after the voltage for getting striding capacitance with the preset threshold of setting, judges whether the voltage of striding capacitance is greater than
Preset threshold.
There are when multiple striding capacitances, need to compare the voltage of each striding capacitance with preset threshold in circuit.
S103: the first voltage at the first striding capacitance both ends is not up to the preset threshold if it exists, by with described
First precharge unit of one striding capacitance parallel connection charges to first striding capacitance, until first striding capacitance
The first voltage at both ends reach the preset threshold, then will be closed with the concatenated third switch module of first striding capacitance
It closes.
In this step, if there is the voltage of one or more the first striding capacitance, that is, the first above-mentioned electricity
Pressure is less than preset threshold, then needs to carry out first striding capacitance precharge until the voltage at the first striding capacitance both ends is greater than
Or it is equal to threshold, third switch module is closed after charging complete, so that the power conversion system works normally.
It further, will be with described first if the first voltage at the first striding capacitance both ends reaches the preset threshold
The concatenated third switch module closure of striding capacitance.Here the first striding capacitance refers to each striding capacitance in circuit, such as
The voltage at each striding capacitance both ends has reached preset threshold in fruit circuit, then can directly close each third switch module
It closes, boost power translation circuit work is controlled according to certain rule.
In addition, if N number of second switch module is turned off according to system command, by the N-1 third switch module
Shutdown.
In the step S101 of this programme, judge that working condition locating for system, General System include at least following
State: 1., pre- open state, 2., normal operating conditions after booting, 3., pre- off-mode, 4., off-mode；According to system institute
The different conditions at place execute different movements.When system is in pre- open state, precharge unit detects the voltage of striding capacitance,
If striding capacitance voltage meets range of set value, it is closed third switch module；When striding capacitance voltage is unsatisfactory for setting value model
It encloses, then striding capacitance voltage charge value preset value is reclosed by second switch module by precharge unit；Third switch module
After closure, other switch modules can carry out normal open and close movement according to system command, and system enters normal operating conditions；
System is in normal operating conditions, and precharge unit and third switch module maintain standing state；System is in pre- shutdown shape
After state, first switch module and second switch module are turned off according to system command, the shutdown of third switch module page, precharge unit
Enter off-mode without further movement, system；System enters off-mode, and precharge unit and third switch module maintain
Standing state.
The control method of boost power translation circuit provided in this embodiment, passes through the bridge arm in boost power translation circuit
Upper setting and the concatenated third switch module of striding capacitance, and be each striding capacitance parallel connection precharge unit, in striding capacitance
Voltage be less than preset threshold when, disconnect third switch module striding capacitance is pre-charged, when the voltage of striding capacitance reaches
When to preset threshold, it is closed third switch module, guarantees that the voltage of striding capacitance will not be down to 0V, to avoid in high-pressure system
It is middle using boost power translation circuit when, the problem of semiconductor devices may be by over-voltage breakdown.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, various embodiments of the present invention technology that it does not separate the essence of the corresponding technical solution
The range of scheme.
Claims (10)
1. a kind of boost power translation circuit characterized by comprising N number of first switch module, N number of second switch module, N-
1 third switch module, N-1 striding capacitance and N-1 precharge unit；N is the positive integer more than or equal to 2；
N number of second switch module and inductor and input power are sequentially connected in series forming circuit；N number of first switch module
Forming circuit is sequentially connected in series with load, the input power and the inductor；I-th of first switch module and i+1 the
Second between the first common point and i-th of second switch module and i+1 second switch module between one switch module
A functional circuit in parallel between common point；Each functional circuit is switched by a striding capacitance being sequentially connected in series and a third
Module composition；I is the positive integer less than N；
The both ends of an each striding capacitance precharge unit in parallel；Each precharge unit is used to fly in connected in parallel across electricity
Hold connection third switch module disconnect and the striding capacitance voltage be less than preset threshold when, to the striding capacitance into
Line precharge.
2. boost power translation circuit according to claim 1, which is characterized in that the first switch module includes two poles
Pipe or diodes in parallel are against conductivity type semiconductor switch；The second switch module includes diodes in parallel semiconductor switch.
3. boost power translation circuit according to claim 1 or 2, which is characterized in that the third switch module includes
Open type switch and ON-OFF control circuit；The ON-OFF control circuit is closed the switch or is opened for controlling the open type.
4. boost power translation circuit according to claim 1 or 2, which is characterized in that the boost power translation circuit
Further include: N number of inverse conductivity type switching tube；The both ends of each first switch module are connected in parallel an inverse conductivity type switching tube, for real
Existing synchronous rectification.
5. boost power translation circuit according to claim 4, which is characterized in that the inverse conductivity type switching tube includes gold
Category-Oxide Semiconductor Field Effect Transistors or inverse conductivity type insulated gate bipolar transistor.
6. boost power translation circuit according to claim 3, which is characterized in that the open type switch includes relay
Device, contactor or semiconductor switch.
7. a kind of control method of boost power translation circuit, which is characterized in that be applied to boost power translation circuit；The liter
Pressure power conversion circuit includes: N number of first switch module, N number of second switch module, N-1 third switch module, N-1 winged
Across capacitor and N-1 precharge unit；N is the positive integer more than or equal to 2；N number of second switch module and inductor and
Input power is sequentially connected in series forming circuit；N number of first switch module and load, the input power and the inductor according to
Secondary series connection forming circuit；The first common point between i-th of first switch module and i+1 first switch module and i-th
A functional circuit in parallel between the second common point between second switch module and i+1 second switch module；Each function
Energy circuit is made of a striding capacitance being sequentially connected in series and a third switch module；I is the positive integer less than N；The side
Method includes:
When system is in pre- open state, the first voltage at each striding capacitance both ends is detected by each precharge unit；
Judge whether the first voltage at each striding capacitance both ends reaches preset threshold；
The first voltage at the first striding capacitance both ends is not up to the preset threshold if it exists, by with first striding capacitance
The first precharge unit in parallel charges to first striding capacitance, until the of the both ends of first striding capacitance
One voltage reaches the preset threshold, then will be closed with the concatenated third switch module of first striding capacitance.
8. the method according to the description of claim 7 is characterized in that the method also includes:
It, will be concatenated with first striding capacitance if the first voltage at the first striding capacitance both ends reaches the preset threshold
Third switch module closure.
9. method described in claim 7 or 8, which is characterized in that the method also includes:
If N number of second switch module is turned off according to system command, the N-1 third switch module is turned off.
10. method according to claim 7 or 8, which is characterized in that the first switch module includes diode or two
Pole pipe parallel connection is against conductivity type semiconductor switch；The second switch module includes diodes in parallel semiconductor switch；
The third switch module includes open type switch and ON-OFF control circuit；The ON-OFF control circuit is described for controlling
Open type is closed the switch or is opened.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610816131.6A CN106230253B (en) | 2016-09-09 | 2016-09-09 | Boost power translation circuit and control method |
| PCT/CN2017/100458 WO2018045936A1 (en) | 2016-09-09 | 2017-09-05 | Boost power conversion circuit and control method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610816131.6A CN106230253B (en) | 2016-09-09 | 2016-09-09 | Boost power translation circuit and control method |
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| CN106230253B true CN106230253B (en) | 2019-05-07 |
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| CN106230253A (en) | 2016-12-14 |
| WO2018045936A1 (en) | 2018-03-15 |
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