CN106230253A - Boost power translation circuit and control method - Google Patents
Boost power translation circuit and control method Download PDFInfo
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- CN106230253A CN106230253A CN201610816131.6A CN201610816131A CN106230253A CN 106230253 A CN106230253 A CN 106230253A CN 201610816131 A CN201610816131 A CN 201610816131A CN 106230253 A CN106230253 A CN 106230253A
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- switch module
- striding capacitance
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- circuit
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
Abstract
The present invention provides a kind of boost power translation circuit and control method, and this circuit includes: N number of first switch module, N number of second switch module, 1 the 3rd switch module of N, 1 striding capacitance of N and 1 precharge unit of N；N number of second switch module is connected with inducer and input power and is formed loop；N number of first switch module is connected with load, inducer and input power and is formed loop；The first common point between first switch module and be connected striding capacitance and the 3rd switch module between the second common point between second switch module；Each striding capacitance precharge unit in parallel；Each precharge unit is when the voltage of the 3rd switch module disconnection connected at striding capacitance connected in parallel and striding capacitance is less than predetermined threshold value, striding capacitance is pre-charged, ensure that the voltage of striding capacitance will not as little as 0V, thus when avoiding using boost power translation circuit in high-pressure system, semiconductor device may be by the problem of over-voltage breakdown.
Description
Technical field
The present embodiments relate to electronic circuit technology, particularly relate to a kind of boost power translation circuit and control method.
Background technology
Boost circuit is not specific to a kind of physical circuit, refers to a kind of booster circuit, i.e. inputs one by this circuit realiration
Voltage, exports a higher voltage, it is achieved power conversion, it is possible to input is more than or equal to referred to as many level of three level
Boost circuit.
Fig. 1 a is a kind of striding capacitance many level Boosts circuit, and Fig. 1 b is a kind of striding capacitance many level Boosts circuit
Control signal schematic diagram, as shown in Figure 1 a, 1 b, L is inducer, and D1, D2, D5, D6 are diode, and T1, T2 are that quasiconductor is opened
Close (can be insulated gate bipolar transistor (English: Insulated Gate Bipolar Transistor, abbreviation:
IGBT), metal-oxide layer semiconductcor field effect transistor is (English: Metal-Oxide-Semiconductor Field-Effect
Transistor, is called for short: MOSFET) etc.), C1, C2 are capacitor, and R is ohmic load, and Vin is input power, and Vout is load
The voltage of resistance.For ease of analyzing, it is assumed that inducer L sensibility reciprocal infinitely great (i.e. inductive current keeps constant), electric capacity C1, C2 capacity
Infinitely great (capacitance keeps constant).Control the break-make of T1, T2 pipe according to certain rule, output voltage Vout can be realized big
In input voltage vin.Concrete: the 0～D*T stage: T1 is in the conduction state, and T2 is off, now inductive current warp
Being flow to load by T1, C1, D6, now the voltage VL at inductance two ends is that (D5 is pressure equal to Vc voltage 0.5* for Vout-Vc-Vin
Vout；It is that Vout deducts Vc, for 0.5*Vout that T2 bears voltage)；D*T～the 0.5T stage: T1, T2 are in off-state, this
Time inductive current via D5, D6 flow to load, now the voltage VL at inductance two ends is Vout-Vin, and (T1 is pressure equal to Vc voltage
0.5*Vout；It is that Vout deducts Vc, for 0.5*Vout that T2 bears voltage)；0.5T～the D*T+0.5T stage: T2 is on shape
State, T1 is off, and now inductive current flow to power supply via D5, Vc, T2, and now the voltage VL at inductance two ends is Vc-
Vin, (T1 is pressure equal to Vc voltage 0.5*Vout；It is that Vout deducts Vc, for 0.5*Vout that D6 bears voltage)；D*T+0.5T～T
In the stage: T1, T2 are in off-state, now inductive current flow to load via D5, D6, and now the voltage VL at inductance two ends is
Vout-Vin, T1 are pressure equal to Vc voltage 0.5*Vout；It is that Vout deducts Vc, for 0.5*Vout that T2 bears voltage；In sum,
All quasiconductors open the light that pipe is the highest pressure is 0.5Vout, and other control cycles can as procedure described above.According to
Inductance both end voltage weber conservation principle, in i.e. one working cycle, the product of inductance both end voltage and time is 0.Can be as
Lower formula: (Vout-Vc-Vin) * D*T+ (Vout-Vin) * (0.5T-D*T)+(Vc-Vin) * 0.2T+ (Vout-Vin) *
(0.5T-D*T)=0；Abbreviation above formula can obtain Vout=Vin/ (1-D), i.e. by the control to T1 and T2, can realize output voltage
Higher than input voltage.
But, understanding Vout > Vin according to above-mentioned analysis, all switching tubes may select pressure for 0.5Vout；If flying across electricity
There is not voltage, i.e. Vc=0 in appearance, capacitance voltage is 0, then electric capacity can be considered as short circuit, i.e. T1 pipe by the two-way short circuit of D1, D5,
Now T2, D2 bear input voltage vin, and D6 bears pressure Vout-Vin；If Vin < 0.5Vout, then T2, D2 bear input voltage
< 0.5Vout, owing to D2, T2 are pressure for 0.5Vout, D2, T2 will not over-voltage breakdown for Vin, Vin；D6 bears pressure Vout-Vin,
Vout-Vin > 0.5Vout, pressure more than D6, D6 can over-voltage breakdown；If Vin > 0.5Vout, then T2, D2 bear input voltage
Vin, Vin > 0.5Vout, more than the pressure 0.5Vout of D2, T2, D2, T2 can over-voltage breakdown；D6 bears pressure Vout-Vin, Vout-
Vin < 0.5Vout, pressure less than D6, D6 will not over-voltage breakdown；Analyzed, if striding capacitance voltage Vc is from above
Zero, then the quasiconductor in such scheme is all deposited by the risk of over-voltage breakdown.
Summary of the invention
The embodiment of the present invention provides a kind of boost power translation circuit and control method, for solving current many level electricity
In road, when the voltage of striding capacitance is zero, semiconductor device may be by the problem of over-voltage breakdown.
First aspect present invention provides a kind of boost power translation circuit, including: N number of first switch module, N number of second opens
Close module, N-1 the 3rd switch module, N-1 striding capacitance and N-1 precharge unit；N is the most whole more than or equal to 2
Number；
Described N number of second switch module and inducer and input power are sequentially connected in series formation loop；Described N number of first switch
Module and load, described inducer and described input power are sequentially connected in series formation loop；I-th the first switch module and i+1
Between the first common point and i-th second switch module and i+1 second switch module between individual first switch module
A functional circuit in parallel between second common point；Each functional circuit is by the striding capacitance being sequentially connected in series and one the 3rd
Switch module forms；I is the positive integer less than N；
The two ends of an each striding capacitance precharge unit in parallel；Each precharge unit is for flying in connected in parallel
When the voltage of the 3rd switch module disconnection that electric capacity connects and described striding capacitance is less than predetermined threshold value, fly across electricity described
Hold and be pre-charged.
The boost power translation circuit that this programme provides, increases switch module on each brachium pontis, the most above-mentioned and each fly
Across the switch module of capacitances in series, additionally give each striding capacitance parallel connection precharge unit.When using this boost power conversion electricity
The system on road is in pre-open state, and the voltage of the striding capacitance that precharge unit detection is corresponding, if the voltage of striding capacitance is full
Foot range of set value, then close the 3rd switch module connected with this striding capacitance, if the voltage of striding capacitance is unsatisfactory for setting
Value scope, then be charged this striding capacitance, until the voltage on this striding capacitance reaches by corresponding precharge unit
During set point, it is closed again the 3rd switch module, after the 3rd switch module is closed, other the first switch module and the
Two switch modules can carry out normal switch motion according to system command.
In the implementing of such scheme, described first switch module includes that diode or diodes in parallel are against conductivity type
Semiconductor switch；Described second switch module includes diodes in parallel semiconductor switch.
Described 3rd switch module includes open type switch and ON-OFF control circuit；Described ON-OFF control circuit is used for controlling
Described open type switch closes or opens.
By above-mentioned the 3rd switch module arranging in circuit and connecting with striding capacitance, and fill for each striding capacitance
The precharge unit of electricity, it is ensured that when any duty of system, the voltage of striding capacitance all will not as little as 0V, thus avoid
When using boost power translation circuit in high-pressure system, semiconductor device may be by the problem of over-voltage breakdown.
Additionally, described boost power translation circuit also includes: N number of inverse conductivity type switching tube；The two of each first switch module
End is connected in parallel an inverse conductivity type switching tube, is used for realizing synchronous rectification.
Optionally, described inverse conductivity type switching tube includes that metal-oxide layer semiconductcor field effect transistor or inverse conductivity type insulate
Grid bipolar transistor.
Optionally, described open type switch includes relay, catalyst or bidirectional semiconductor switch.
The program is possible not only to realize multilevel converter, and can reduce output waveform distortion, it is to avoid half in circuit
Conductor device, by the problem of over-voltage breakdown, is effectively improved system effectiveness.
Second aspect present invention provides the control method of a kind of boost power translation circuit, is applied to boost power conversion electricity
Road；Described boost power translation circuit includes: N number of first switch module, N number of second switch module, N-1 the 3rd switching molding
Block, N-1 striding capacitance and N-1 precharge unit；N is the positive integer more than or equal to 2；
Described N number of second switch module and inducer and input power are sequentially connected in series formation loop；Described N number of first switch
Module and load, described inducer and described input power are sequentially connected in series formation loop；I-th the first switch module and i+1
Between the first common point and i-th second switch module and i+1 second switch module between individual first switch module
A functional circuit in parallel between second common point；Each functional circuit is by the striding capacitance being sequentially connected in series and one the 3rd
Switch module forms；I is the positive integer less than N；Described method includes:
When system is in pre-open state, detected first electricity at each striding capacitance two ends by each precharge unit
Pressure；
Judge whether first voltage at each striding capacitance two ends reaches predetermined threshold value；
If exist the first striding capacitance two ends the first voltage be not up to described predetermined threshold value, by with described first fly across
Described first striding capacitance is charged by the first precharge unit of electric capacity parallel connection, until the two ends of described first striding capacitance
The first voltage reach described predetermined threshold value, then the 3rd switch module Guan Bi will connected with described first striding capacitance.
Optionally, described method also includes:
If first voltage at the first striding capacitance two ends reaches described predetermined threshold value, then will be with described first striding capacitance string
3rd switch module Guan Bi of connection.
Optionally, described method also includes:
If described N number of second switch module turns off according to system command, then described N-1 the 3rd switch module is turned off.
Optionally, described first switch module includes that diode or diodes in parallel are against conductivity type semiconductor switch；Described
Second switch module includes diodes in parallel semiconductor switch；
Described 3rd switch module includes open type switch and ON-OFF control circuit；Described ON-OFF control circuit is used for controlling
Described open type switch closes or opens.
Additionally, described boost power translation circuit also includes: N number of inverse conductivity type switching tube；The two of each first switch module
End is connected in parallel an inverse conductivity type switching tube, is used for realizing synchronous rectification.
Optionally, described inverse conductivity type switching tube includes that metal-oxide layer semiconductcor field effect transistor or inverse conductivity type insulate
Grid bipolar transistor.
Optionally, described open type switch includes relay, catalyst or bidirectional semiconductor switch.
The boost power translation circuit of present invention offer and control method, by the brachium pontis of boost power translation circuit
The 3rd switch module connected with striding capacitance is set, and is each striding capacitance parallel connection precharge unit, at striding capacitance
When voltage is less than predetermined threshold value, disconnects the 3rd switch module and striding capacitance is pre-charged, when the voltage of striding capacitance reaches
During predetermined threshold value, close the 3rd switch module, it is ensured that the voltage of striding capacitance will not as little as 0V, thus avoid in high-pressure system
When using boost power translation circuit, semiconductor device may be by the problem of over-voltage breakdown.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing used required in having technology to describe does one and introduces simply, it should be apparent that, the accompanying drawing in describing below is this
Some bright embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to
Other accompanying drawing is obtained according to these accompanying drawings.
Fig. 1 a is a kind of striding capacitance many level Boosts circuit；
Fig. 1 b is the control signal schematic diagram of a kind of striding capacitance many level Boosts circuit；
The schematic diagram of the boost power translation circuit embodiment one that Fig. 2 provides for the present invention；
The schematic diagram of boost power translation circuit one example that Fig. 3 provides for the present invention；
The schematic diagram of the boost power translation circuit yet another embodiment that Fig. 4 provides for the present invention；
The schematic diagram of the another example of boost power translation circuit that Fig. 5 provides for the present invention；
The schematic diagram of the another kind of connected mode of the boost power translation circuit that Fig. 6 provides for the present invention；
The flow chart of the control method embodiment one of the boost power translation circuit that Fig. 7 provides for the present invention.
Detailed description of the invention
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
The a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under not making creative work premise, broadly falls into the scope of protection of the invention.
The schematic diagram of the boost power translation circuit embodiment one that Fig. 2 provides for the present invention, as in figure 2 it is shown, the present invention carries
The boost power translation circuit of confession includes: N number of first switch module, N number of second switch module, N-1 the 3rd switch module, N-
1 striding capacitance (C1、C2……CN-1) and N-1 precharge unit；N is the positive integer more than or equal to 2；
Described N number of second switch module and inducer L and input power E are sequentially connected in series formation loop；Described N number of first opens
Close module and be sequentially connected in series formation loop with load (R and C), described inducer and described input power；I-th the first switch module
And the first common point A (A1, A2 etc. in figure) between i+1 the first switch module and i-th second switch module and i-th
A functional circuit in parallel between the second common point P (P1, P2 etc. in figure) between+1 second switch module (such as:
Figure connects between A1 and P1 C1 and first the 3rd switch module, connect C2 between A2 and P2 in the drawings and second the 3rd open
Close module, by that analogy)；Each functional circuit is made up of the striding capacitance being sequentially connected in series and the 3rd switch module；i
For the positive integer less than N；
The two ends of an each striding capacitance precharge unit in parallel；Each precharge unit is for flying in connected in parallel
When the voltage of the 3rd switch module disconnection that electric capacity connects and described striding capacitance is less than predetermined threshold value, fly across electricity described
Hold and be pre-charged.
In this boost power translation circuit, the first switch module and second switch module can with diode or diode also
The inverse conductivity type semiconductor switch of connection (MOSFET, inverse conductivity type IGBT etc.), wherein, second switch module is that diodes in parallel quasiconductor is opened
Guan Guan；Input power is sequentially connected in series with inducer and multiple second switch module, and input power is opened with multiple first with inducer
Close module and load circuit is sequentially connected in series loop, it is known that N number of first switch module of series connection and N number of the second of series connection open
It is in parallel for closing between module, node A1, A2 between the first switch module being sequentially connected in series ... be the first common point, successively
Node P1, P2 between the second switch module of series connection ... be the second common point.In order to ensure the first switch module and second
Semiconductor device in switch module is the most breakdown, and this programme provides multiple 3rd switch module and precharge unit.Concrete,
3rd switch module can be made up of the control circuit of the switch of open type and switch, open type switch include but not
It is defined in relay, catalyst, bidirectional semiconductor switch etc.；Precharge unit is connected to striding capacitance C1……CN-1Two ends, can
Realize capacitance voltage detection, to functions such as capacitance voltage are charged；Precharge unit can in parallel with striding capacitance realize.
Specifically can apply in power conversion system at above-mentioned boost power translation circuit, especially by judging this power
2., normal operating conditions after start 1., pre-open state duty residing for converting system, totally four kinds of states:, 3., close in advance
Machine state, 4., off-mode；Different actions is performed according to the different conditions residing for system.
When system is in pre-open state, and the voltage of precharge unit detection striding capacitance, if striding capacitance voltage meets
Range of set value, then Guan Bi the 3rd switch module；If striding capacitance voltage is unsatisfactory for range of set value, then pass through precharge unit
By capacitance voltage charge value preset value, it is closed again the 3rd switch module；After the 3rd switch module closes, the first switch module
Can open normally according to system command with second switch module, pipe action, system enter normal operating conditions；
Standing state is maintained, without entering one when system is in normal operating conditions, precharge unit and the 3rd switch module
Step action；
Have no progeny according to system command pass when system is in pre-off state, the first switch module and second switch module, the
Three switch modules turn off, and precharge unit enters off-mode without further action, system；
Standing state is maintained, without the most dynamic when system enters off-mode, precharge unit and the 3rd switch module
Make.
The boost power translation circuit that the present embodiment provides, by arranging and flying on the brachium pontis of boost power translation circuit
Across the 3rd switch module of capacitances in series, and being each striding capacitance parallel connection precharge unit, the voltage at striding capacitance is less than
During predetermined threshold value, disconnect the 3rd switch module and striding capacitance is pre-charged, when the voltage of striding capacitance reaches predetermined threshold value
Time, close the 3rd switch module, it is ensured that the voltage of striding capacitance will not as little as 0V, thus avoid in high-pressure system use boosting
During power conversion circuit, semiconductor device may be by the problem of over-voltage breakdown.
In the implementing of above-described embodiment, described first switch module includes diode or diodes in parallel is inverse leads
Type semiconductor switch；Described second switch module includes diodes in parallel semiconductor switch.Described 3rd switch module includes often
Open switch and ON-OFF control circuit；Described ON-OFF control circuit is used for controlling described open type switch Guan Bi or opening.
The boost power translation circuit provided the present invention below by several examples illustrates.
The schematic diagram of boost power translation circuit one example that Fig. 3 provides for the present invention；As it is shown on figure 3, in this programme
First switch module is diode D1, D2 ... Dn.Second switch module is diodes in parallel semiconductor switch, and each second opens
Close module and include a MOSFET and a diode, such as, T1 and Dn+1, T2 and Dn+2 ..., S1, the S2 in figure ...
Sn-1 is equivalent to N-1 the 3rd switch module, C1, the C2 in figure ... Cn-1 is equivalent to N-1 striding capacitance, each flies across electricity
Hold and increase a precharge unit possessing pre-charging functions.I.e. in this programme, (n is equivalent to the N in embodiment one, for being more than
Positive integer equal to 2).
On the basis of above-described embodiment, as a example by N is equal to 2, this boost power translation circuit is analyzed explanation, figure
The schematic diagram of the 4 boost power translation circuit yet another embodiments provided for the present invention, as shown in Figure 4, in figure, the part in wire frame 3 is
The boost power translation circuit of the present invention, forming complete power conversion together with input power, inducer and load circuit is
System.First switch module S1, S2 and second switch module S3, S4 are semiconductor switch module；S1, S2 are diode or two poles
Pipe inverse conductivity type semiconductor switch in parallel (MOSFET, inverse conductivity type IGBT etc.), S3, S4 are diodes in parallel semiconductor switch pipe；Four
Individual semiconductor switch module being sequentially connected with according to S1, S2, S3, S4, node A2 is the common point of S1, S2, and node A3 is
The common point of S2, S3, node A4 is the common point of S3, S4；Input power and inducer are connected to what A3 and S4 was not connected with S3
One end.C1 is striding capacitance, and wire frame 1 is precharge unit, is connected in parallel on the two ends of this striding capacitance C1；Wire frame 2 is the 3rd switch
Module S.
3rd switch module 2 (i.e. S) is made up of the switch of open type and the control circuit of switch, and open type switch includes
But it is not limited to relay, catalyst, bidirectional semiconductor switch etc.；Precharge unit 1 is connected to striding capacitance C1 two ends, can be real
Existing capacitance voltage detects, to functions such as capacitance voltage are charged；
Precharge unit links together by the way of connecting with the 3rd switch module, and node A6 is the 3rd switching molding
Block, precharge unit and the common point of striding capacitance C1；Another node of precharge unit is connected to node A2, the 3rd switching molding
Another node of block is connected to node A4；
One end of inducer is connected to node A3, and the other end is connected to the positive pole of input power；Node A5 connects input electricity
Source and the negative terminal of input power；Node A1 is connected to the anode of out-put supply.
In the circuit, system is in pre-open state, and the voltage of precharge unit detection striding capacitance C1, if flying across electricity
Hold C1 voltage and meet range of set value, then Guan Bi switch S；If striding capacitance voltage is unsatisfactory for range of set value, then pass through preliminary filling
Electric unit, by striding capacitance voltage charge value preset value, is closed again switch S (the i.e. the 3rd switch module 2)；After switch S Guan Bi, open
Pass S1, S2, S3, S4 can open normally according to system command, pipe action, and system enters normal operating conditions；
System is in normal operating conditions, precharge unit and the 3rd switch module 2 and maintains standing state, without further
Action；System is in pre-off state, and S1, S2, S3, S4 close according to system command and have no progeny, and the 3rd switch module 2 turns off, preliminary filling
Electric unit enters off-mode without further action, system；System enters off-mode, precharge ternary and the 3rd switching molding
Block 2 maintains standing state, without further action.
L is inducer, and D1, D2, D5, D6 are diode, and T1, T2 are semiconductor switch, and R is ohmic load, and Vin is input
Power supply, Vout is the voltage of load resistance.For ease of analyzing, it is assumed that inducer L sensibility reciprocal is infinitely great, and (i.e. inductive current keeps perseverance
Fixed), electric capacity C, C1 infinite capacity big (capacitance keeps constant), according to the analysis process of the circuit shown in Fig. 1 a, this programme
In also select the pressure semiconductor switch pressure for 0.5Vout.
When system is in pre-open state: the 3rd switch module 2 (i.e. S) is off, it is assumed that now input voltage
For Vin, output voltage Vout, Vin < Vout, S3, S4 bear voltage Vin jointly, each switching tube is pressure 0.5Vin, 0.5Vin <
0.5Vout, S3, S4 will not over-voltage breakdown；S1, S2 bear Vout-Vin jointly, each pipe is pressure 0.5 (Vout-Vin), and 0.5
(Vout-Vin) < 0.5Vout, S1, S2 equally will not excessive pressure damages, under pre-open state, all semiconductor switch all will not
Damage.
When the systems are operating normally: switch S Guan Bi, if being controlled according to the control signal shown in Fig. 1 b, T1 is in and leads
Logical state, T2 is off, and now inductive current flow to load, now inductance via T1, S (being equivalent to wire), C1, D6
The voltage VL at two ends is Vout-Vc-Vin；T1, T2 are in off-state, and now inductive current flow to load via D5, D6,
Now the voltage VL at inductance two ends is Vout-Vin；T2 is in the conduction state, and T1 is off, now inductive current via
D5, Vc, T2 flow to power supply, and now the voltage VL at inductance two ends is Vc-Vin；T1, T2 are in off-state, now inductance electricity
Flowing through and flow to load by D5, D6, now the voltage VL at inductance two ends is Vout-Vin；Normal circuit operation of the present invention, all half
It is pressure less than 0.5Vout that conductor switchs, and when normally working, all quasiconductors equally will not over-voltage breakdown.
When system is in pre-off-mode: because the 3rd switch module 2 (i.e. S) is later than switch, S1, S2, S3, S4 close
Disconnected, when homologous ray normally works, all quasiconductors equally will not over-voltage breakdown.
When system is in off-mode: the 3rd switch module 2 disconnects, homologous ray is in pre-open state, all quasiconductors
Equally will not over-voltage breakdown.
Analyzed from above, in the various duty of system, the boost power translation circuit that the present invention provides
To avoid the quasiconductor over-voltage breakdown problem being likely to occur in existing circuit.
During system worked well, the 3rd switch module 2 is in closure state, can be equivalent to short circuit, and pre-charge circuit is motionless
Make, when the most normally working, multilevel converter can be realized, thus use the technology of the present invention can obtain multilevel converter and bring receipts
Benefit, including reducing output waveform distortion, improves system effectiveness etc..
On the basis of any of the above-described embodiment, this boost power translation circuit also includes: N number of inverse conductivity type switching tube；Often
The two ends of individual first switch module are connected in parallel an inverse conductivity type switching tube, are used for realizing synchronous rectification.
The schematic diagram of the another example of boost power translation circuit that Fig. 5 provides for the present invention；As it is shown in figure 5, should, above-mentioned
On the basis of scheme shown in Fig. 4, each first switch module is connected in parallel a switch with third quadrant on state characteristic
Pipe, i.e. against conductivity type switching tube, i.e. D5, D6 pipe parallel connection has the switch transistor T 5 of third quadrant on state characteristic, T6, including MOSFET with
And against conductivity type IGBT, synchronous rectification many level boost can be realized.
The schematic diagram of the another kind of connected mode of the boost power translation circuit that Fig. 6 provides for the present invention, as shown in Figure 6,
Inducer and D5, D6 are connected to the negative pole of input power, and according to the forward conduction characteristic of diode, the negative electrode of D5 is with inducer even
Connect.For N level increasing circuit, it would however also be possible to employ this kind of mode is attached.
The boost power translation circuit that any of the above-described embodiment provides, by switching in striding capacitance one end concatenation, and
Increase precharge unit to each striding capacitance, solve to use low-voltage semiconductor device, part of devices to exist in high-pressure system
The problem being unsatisfactory for resistance to pressure request, and while realizing many level output function, system effectiveness can be greatly improved, reduce
The volume of wave filter.
The flow chart of the control method embodiment one of the boost power translation circuit that Fig. 7 provides for the present invention, such as Fig. 7 institute
Showing, this control method is applied to the boost power translation circuit that any embodiment shown in Fig. 2 to Fig. 6 provides, its circuit theory
Refer to previous embodiment with connection, do not repeat them here, in a particular application, the control method of this boost power translation circuit
The step that implements include:
S101: when system is in pre-open state, detects each striding capacitance two ends by each precharge unit
First voltage.
In this step, this system refers to use the power conversion system of above-mentioned boost power translation circuit, examines in real time
The state of examining system, in the pre-start process of system, detects the voltage of each striding capacitance, with Fig. 4 by precharge unit
As a example by shown embodiment, the electric capacity of precharge unit detection striding capacitance C1.
S102: judge whether first voltage at each striding capacitance two ends reaches predetermined threshold value.
In this step, needing to pre-set the predetermined threshold value of striding capacitance, generally this predetermined threshold value is minimum
Voltage, this minimum voltage is to ensure that the semiconductor device in circuit will not be by the minimum voltage of over-voltage breakdown, power conversion system
Contrast with the predetermined threshold value arranged after the voltage getting striding capacitance, it is judged that whether the voltage of striding capacitance is more than
Predetermined threshold value.
When circuit exists multiple striding capacitance, the voltage by each striding capacitance is needed to contrast with predetermined threshold value.
S103: if the first voltage that there are the first striding capacitance two ends is not up to described predetermined threshold value, by with described the
Described first striding capacitance is charged by the first precharge unit of one striding capacitance parallel connection, until described first striding capacitance
First voltage at two ends reach described predetermined threshold value, then the 3rd switch module connected with described first striding capacitance is closed
Close.
In this step, if there is the voltage of one or more the first striding capacitance, the first the most above-mentioned electricity
Pressure less than predetermined threshold value, then needs to be pre-charged this first striding capacitance until the voltage at the first striding capacitance two ends is more than
Or equal to threshold, by the 3rd switch module Guan Bi after charging complete, so that this power conversion system normally works.
Further, if first voltage at the first striding capacitance two ends reaches described predetermined threshold value, then will be with described first
3rd switch module Guan Bi of striding capacitance series connection.Here the first striding capacitance refers to each striding capacitance in circuit, as
Really in circuit, the voltage at each striding capacitance two ends has all reached predetermined threshold value, then can directly be closed by each 3rd switch module
Close, control this boost power translation circuit according to certain rule and work.
If it addition, described N number of second switch module turns off according to system command, then by described N-1 the 3rd switch module
Turn off.
In step S101 of this programme, it is judged that the duty residing for system, General System at least includes following
State: 1., pre-open state, 2., normal operating conditions after start, 3., pre-off-mode, 4., off-mode；According to system institute
The different conditions at place performs different actions.When system is in pre-open state, and precharge unit detects the voltage of striding capacitance,
If striding capacitance voltage meets range of set value, then Guan Bi the 3rd switch module；When striding capacitance voltage is unsatisfactory for setting value model
Enclose, then by precharge unit by striding capacitance voltage charge value preset value, be closed again second switch module；3rd switch module
After Guan Bi, other switch module can carry out normal open and close action according to system command, and system enters normal operating conditions；
System is in normal operating conditions, precharge unit and the 3rd switch module and maintains standing state；System is in pre-shutoff shape
State, the first switch module and second switch module are closed according to system command and are had no progeny, and the 3rd switch module page turns off, precharge unit
Without further action, system enters off-mode；System enters off-mode, precharge unit and the 3rd switch module and maintains
Standing state.
The control method of the boost power translation circuit that the present embodiment provides, by the brachium pontis at boost power translation circuit
The 3rd switch module that upper setting is connected with striding capacitance, and be each striding capacitance parallel connection precharge unit, at striding capacitance
Voltage less than predetermined threshold value time, disconnect the 3rd switch module striding capacitance is pre-charged, when the voltage of striding capacitance reaches
During to predetermined threshold value, close the 3rd switch module, it is ensured that the voltage of striding capacitance will not as little as 0V, thus avoid in high-pressure system
During middle use boost power translation circuit, semiconductor device may be by the problem of over-voltage breakdown.
Last it is noted that various embodiments above is only in order to illustrate technical scheme, it is not intended to limit；To the greatest extent
The present invention has been described in detail by pipe with reference to foregoing embodiments, it will be understood by those within the art that: it depends on
So the technical scheme described in foregoing embodiments can be modified, or the most some or all of technical characteristic is entered
Row equivalent；And these amendments or replacement, do not make the essence of appropriate technical solution depart from various embodiments of the present invention technology
The scope of scheme.
Claims (10)
1. a boost power translation circuit, it is characterised in that including: N number of first switch module, N number of second switch module, N-
1 the 3rd switch module, N-1 striding capacitance and N-1 precharge unit；N is the positive integer more than or equal to 2；
Described N number of second switch module and inducer and input power are sequentially connected in series formation loop；Described N number of first switch module
It is sequentially connected in series formation loop with load, described inducer and described input power；I-th the first switch module and i+1 the
Between one switch module between the first common point and i-th second switch module and i+1 second switch module second
A functional circuit in parallel between common point；Each functional circuit is by the striding capacitance being sequentially connected in series and the 3rd switch
Module forms；I is the positive integer less than N；
The two ends of an each striding capacitance precharge unit in parallel；Each precharge unit is for flying across electricity in connected in parallel
When the voltage of the 3rd switch module disconnection and described striding capacitance of holding connection is less than predetermined threshold value, described striding capacitance is entered
Line precharge.
Boost power translation circuit the most according to claim 1, it is characterised in that described first switch module includes two poles
Pipe or diodes in parallel are against conductivity type semiconductor switch；Described second switch module includes diodes in parallel semiconductor switch.
Boost power translation circuit the most according to claim 1 and 2, it is characterised in that described 3rd switch module includes
Open type switch and ON-OFF control circuit；Described ON-OFF control circuit is used for controlling described open type switch Guan Bi or opening.
4. according to the boost power translation circuit described in any one of claims 1 to 3, it is characterised in that described boost power becomes
Change circuit also to include: N number of inverse conductivity type switching tube；The two ends of each first switch module are connected in parallel an inverse conductivity type switching tube,
For realizing synchronous rectification.
Boost power translation circuit the most according to claim 4, it is characterised in that described inverse conductivity type switching tube includes gold
Genus-MOSFET or inverse conductivity type insulated gate bipolar transistor.
Boost power translation circuit the most according to claim 3, it is characterised in that described open type switch includes relay
Device, catalyst or semiconductor switch.
7. the control method of a boost power translation circuit, it is characterised in that be applied to boost power translation circuit；Described liter
Pressure power conversion circuit includes: N number of first switch module, N number of second switch module, N-1 the 3rd switch module, N-1 fly
Across electric capacity and N-1 precharge unit；N is the positive integer more than or equal to 2；Described N number of second switch module and inducer and
Input power is sequentially connected in series formation loop；Described N number of first switch module depends on load, described inducer and described input power
Secondary series connection forms loop；The first common point between i-th the first switch module and i+1 the first switch module and i-th
A functional circuit in parallel between the second common point between second switch module and i+1 second switch module；Each merit
Can be made up of the striding capacitance being sequentially connected in series and the 3rd switch module by circuit；I is the positive integer less than N；Described side
Method includes:
When system is in pre-open state, detected first voltage at each striding capacitance two ends by each precharge unit；
Judge whether first voltage at each striding capacitance two ends reaches predetermined threshold value；
If exist the first striding capacitance two ends the first voltage be not up to described predetermined threshold value, by with described first striding capacitance
Described first striding capacitance is charged by the first in parallel precharge unit, until the of the two ends of described first striding capacitance
One voltage reaches described predetermined threshold value, then the 3rd switch module Guan Bi will connected with described first striding capacitance.
Method the most according to claim 7, it is characterised in that described method also includes:
If first voltage at the first striding capacitance two ends reaches described predetermined threshold value, then will connect with described first striding capacitance
3rd switch module Guan Bi.
9. the method described in claim 7 or 8, it is characterised in that described method also includes:
If described N number of second switch module turns off according to system command, then described N-1 the 3rd switch module is turned off.
10. according to the method described in any one of claim 7 to 9, it is characterised in that described first switch module includes diode
Or diodes in parallel is against conductivity type semiconductor switch；Described second switch module includes diodes in parallel semiconductor switch；
Described 3rd switch module includes open type switch and ON-OFF control circuit；Described ON-OFF control circuit is used for controlling described
Open type switch closes or opens.
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| CN201610816131.6A CN106230253B (en) | 2016-09-09 | 2016-09-09 | Boost power translation circuit and control method |
| PCT/CN2017/100458 WO2018045936A1 (en) | 2016-09-09 | 2017-09-05 | Boost power conversion circuit and control method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610816131.6A CN106230253B (en) | 2016-09-09 | 2016-09-09 | Boost power translation circuit and control method |
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| CN106230253B CN106230253B (en) | 2019-05-07 |
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| CN201610816131.6A Active CN106230253B (en) | 2016-09-09 | 2016-09-09 | Boost power translation circuit and control method |
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| Publication number | Publication date |
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| CN106230253B (en) | 2019-05-07 |
| WO2018045936A1 (en) | 2018-03-15 |
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