CN106229316A - A kind of Split-gate flash memory that obtains stablizes the technique manufacturing method that floating boom is most advanced and sophisticated - Google Patents
A kind of Split-gate flash memory that obtains stablizes the technique manufacturing method that floating boom is most advanced and sophisticated Download PDFInfo
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- CN106229316A CN106229316A CN201610890802.3A CN201610890802A CN106229316A CN 106229316 A CN106229316 A CN 106229316A CN 201610890802 A CN201610890802 A CN 201610890802A CN 106229316 A CN106229316 A CN 106229316A
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- 238000007667 floating Methods 0.000 title claims abstract description 131
- 238000000034 method Methods 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 67
- 229920005591 polysilicon Polymers 0.000 claims abstract description 65
- 238000005530 etching Methods 0.000 claims abstract description 43
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 230000008878 coupling Effects 0.000 claims abstract description 5
- 238000010168 coupling process Methods 0.000 claims abstract description 5
- 238000005859 coupling reaction Methods 0.000 claims abstract description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000026267 regulation of growth Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
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- Ceramic Engineering (AREA)
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- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
A kind of Split-gate flash memory that obtains stablizes the technique manufacturing method that floating boom is most advanced and sophisticated, including: on substrate, form coupling oxide layer and floating gate polysilicon layer, floating gate polysilicon layer is formed floating boom silicon nitride layer, arranges mask, form mask pattern；Utilize mask that floating boom silicon nitride layer is performed etching and ensure that floating gate polysilicon has loss amount to prevent the floating boom silicon nitride residue of open area simultaneously, utilize feedback system and isotropic etching based on the floating gate polysilicon residual thickness that floating boom silicon nitride etch is later so that the floating gate polysilicon residual thickness after isotropic etching is identical, ultimately form the floating gate polysilicon with different radian；The floating gate polysilicon layer of floating boom silicon nitride open area is formed the first side wall, the second side wall, source polysilicon lines；According to the radian size that floating gate polysilicon layer isotropic etching is formed, the first side wall is performed different wet methods and is laterally etched back to the time.
Description
Technical field
The present invention relates to field of semiconductor manufacture, obtain Split-gate flash memory it is more particularly related to a kind of
Stablize the technique manufacturing method that floating boom is most advanced and sophisticated.
Background technology
The advantages such as flash memory is convenient with it, and memory density is high, good reliability become the focus of research in non-volatility memorizer.
Since first flash memory products appearance 1980s, along with developing with each electronic product storage of technology
Demand, flash memory is widely used in mobile phone, notebook, and palm PC and USB flash disk etc. move and in communication apparatus.
Flash memory is a kind of nonvolatile memory, and its operation principles is by changing the critical of transistor or memory cell
Voltage controls the switch of gate pole passage to reach to store the purpose of data, makes the storage data in memory will not be because of power supply
Interrupt and disappear, and a kind of special construction that flash memory is electrically erasable and programmable read only memory.Nowadays flash memory has accounted for
According to most of market share of non-volatile semiconductor memory, become non-volatile semiconductor memory with fastest developing speed.
It is said that in general, flash memory is grid dividing structure or stacked gate structure or the combination of two kinds of structures.Gate-division type flash memory is special due to it
Different structure, compares gatestack flash memory and all embodies the performance advantage of its uniqueness, the most sub-gate knot programmed and erased when
Structure is owing to having high programming efficiency, and the structure of wordline can avoid advantages such as " crossing erasing ", applies the most extensive.
In the prior art, in the technical process manufacturing Split-gate flash memory, following manufacture processing procedure can be experienced:
Substrate 10 (general, substrate 10 is silicon substrate) sequentially forms coupling oxide layer 20 and floating gate polysilicon layer 30, and in institute
State formation floating boom silicon nitride layer 40 on floating gate polysilicon layer 30, then arrange mask, and form the pattern 50 of described mask；With
Described floating boom silicon nitride layer is performed etching and ensures that floating gate polysilicon has necessarily simultaneously by the rear described mask utilizing formation pattern
Loss amount to prevent the floating boom silicon nitride residue of open area, in Fig. 2,51 are shown as open area and floating gate polysilicon has
Certain loss amount.
The floating gate polysilicon residual thickness being then based on floating boom silicon nitride etch later utilizes feedback system and isotropism
Etching to form the floating gate polysilicon with different radian in floating gate polysilicon, radian size depends on isotropic etching
Time；Then on the floating gate polysilicon layer of floating boom silicon nitride open area, form the first side wall, the second side wall, source polysilicon
Line；Then, the first side wall is performed identical wet method and be laterally etched back to the time；Last with the first side wall as mask, pass through dry method
Etching floating gate polysilicon, most advanced and sophisticated to form final floating boom；
Utilize feedback system and isotropic etching finally to be formed in floating gate polysilicon in prior art and there is different arc
The floating gate polysilicon of degree, but, perform identical wet method at the first side wall and be laterally etched back to the time and with the first side wall for covering
Film, by dry etching floating gate polysilicon, the floating boom tip of formation can occur different due to the difference of initial floating boom radian
Floating boom is most advanced and sophisticated；Such as, if initial floating boom radian is excessive, but to be laterally etched back to the time too short for wet method, and final floating boom tip is just
Can be the highest more sharp, easily occur that programming was lost efficacy, if initial floating boom radian is too small, but wet method is laterally etched back to overlong time,
Whole floating boom tip will be the lowest more blunt, easily occurs that erasing was lost efficacy.
Accordingly, it is desirable to be able to provide a kind of to be obtained in that Split-gate flash memory stablizes the technique manufacturer that floating boom is most advanced and sophisticated
Method.
Summary of the invention
The technical problem to be solved is for there is drawbacks described above in prior art, it is provided that one is obtained in that
Split-gate flash memory stablizes the technique manufacturing method that floating boom is most advanced and sophisticated.
In order to realize above-mentioned technical purpose, according to the present invention, it is provided that a kind of Split-gate flash memory that obtains stablizes floating boom
Most advanced and sophisticated technique manufacturing method, including: first step: sequentially form coupling oxide layer and floating gate polysilicon layer on substrate, and
And on described floating gate polysilicon layer, form floating boom silicon nitride layer, then arrange mask, and form the pattern of described mask；The
Two steps: followed by the described mask forming pattern described floating boom silicon nitride layer performed etching and ensure floating gate polysilicon simultaneously
There is certain loss amount to prevent the floating boom silicon nitride residue of open area, be then based on later the floating of floating boom silicon nitride etch
Gate polysilicon residual thickness utilize feedback system and isotropic etching finally in floating gate polysilicon formed there is different radian
Floating gate polysilicon, radian size depends on isotropic etching period；Third step: formed raw on floating gate polysilicon layer
Long first side wall, the second side wall, source polysilicon lines；4th step: according to described floating gate polysilicon layer isotropic etching institute
The radian size formed, performs different wet methods to the first side wall and is laterally etched back to the time；5th step: with the first side wall for covering
Film, by dry etching floating gate polysilicon, most advanced and sophisticated to form final floating boom；6th step: formed tunnel oxide, wordline with
And wordline side wall.
Preferably, in above-mentioned acquisition Split-gate flash memory stablizes the technique manufacturing method that floating boom is most advanced and sophisticated, in described shape
In the case of the radian become varies in size, need to perform the different horizontal wet method etch-back time；
Preferably, in above-mentioned acquisition Split-gate flash memory stablizes the technique manufacturing method that floating boom is most advanced and sophisticated, described formation
Radian the biggest, need to perform the process time that horizontal wet method is etched back to the longest.
Preferably, in above-mentioned acquisition Split-gate flash memory stablizes the technique manufacturing method that floating boom is most advanced and sophisticated, described formation
Radian the least, need to perform the process time that horizontal wet method is etched back to the shortest.
Preferably, in above-mentioned acquisition Split-gate flash memory stablizes the technique manufacturing method that floating boom is most advanced and sophisticated, at second step
In Zhou, the etching period of isotropic etching is the longest, and the radian of floating gate polysilicon is the biggest.
Preferably, in above-mentioned acquisition Split-gate flash memory stablizes the technique manufacturing method that floating boom is most advanced and sophisticated, at second step
In Zhou, the etching period of isotropic etching is the shortest, and the radian of floating gate polysilicon is the least.
Preferably, in above-mentioned acquisition Split-gate flash memory stablizes the technique manufacturing method that floating boom is most advanced and sophisticated, described substrate
It it is silicon substrate.
In the present invention, according to the radian size that described floating gate polysilicon layer isotropic etching is formed, to first
Side wall performs different wet methods and is laterally etched back to the time；Make it possible to obtain Split-gate flash memory and stablize floating boom tip.And,
The method of the present invention is tested by the present inventor, and the method for the experimental result display present invention is obtained in that grid-division flash
It is most advanced and sophisticated that floating boom stablized by memorizer, thus the erasing of the flash memory avoided or become inefficacy.
Accompanying drawing explanation
In conjunction with accompanying drawing, and by with reference to detailed description below, it will more easily the present invention is had more complete understanding
And its adjoint advantage and feature is more easily understood, wherein:
Fig. 1 schematically shows a step in the technical process manufacturing Split-gate flash memory.
Fig. 2 schematically shows another step in the technical process manufacturing Split-gate flash memory.
Fig. 3 schematically shows the grid polycrystalline silicon bottom corners big radian wheel produced when manufacturing Split-gate flash memory
Wide.
Fig. 4 schematically shows the grid polycrystalline silicon bottom corners little radian wheel produced when manufacturing Split-gate flash memory
Wide.
Fig. 5 schematically shows floating boom tip profile.
Fig. 6 schematically shows a kind of according to the preferred embodiment of the invention Split-gate flash memory that obtains and stablizes floating boom
The flow chart of most advanced and sophisticated technique manufacturing method.
It should be noted that accompanying drawing is used for illustrating the present invention, and the unrestricted present invention.Note, represent that the accompanying drawing of structure can
Can be not necessarily drawn to scale.Further, in accompanying drawing, same or like element indicates same or like label.
Detailed description of the invention
In order to make present disclosure more clear and understandable, below in conjunction with specific embodiments and the drawings in the present invention
Appearance is described in detail.
Fig. 6 schematically shows a kind of according to the preferred embodiment of the invention Split-gate flash memory that obtains and stablizes floating boom
The flow chart of most advanced and sophisticated technique manufacturing method.
Specifically, as shown in Figure 6, a kind of according to the preferred embodiment of the invention Split-gate flash memory that obtains stablizes floating boom
Most advanced and sophisticated technique manufacturing method includes:
First step S1: sequentially form coupling oxide layer 20 and floating gate polysilicon layer 30 over the substrate 10, and described
Form floating boom silicon nitride layer 40 on floating gate polysilicon layer 30, then arrange mask, and the pattern of the mask 50 needed for being formed, as
Shown in Fig. 1；
Typically, substrate 10 is silicon substrate.
Second step S2: followed by the described mask forming pattern described floating boom silicon nitride layer performed etching and protect simultaneously
Card floating gate polysilicon has certain loss amount 51 to prevent the floating boom silicon nitride residue of open area, is then based on floating boom nitridation
Silicon etches later floating gate polysilicon residual thickness and utilizes feedback system and isotropic etching to be formed in floating gate polysilicon
Having the floating gate polysilicon of different radian, radian size depends on isotropic etching period.In second step, isotropism
The etching period of etching is the longest, and the radian of floating gate polysilicon is the biggest.In the second step, the etching period of isotropic etching is more
Short, the radian of floating gate polysilicon is the least.
Thus, in second step S2, after floating boom silicon nitride etch, the residual thickness of floating gate polysilicon is different, and floating boom is many
The isotropic etching of crystal silicon needs to select the different time identical with the residual thickness after keeping isotropic to etch, therefore,
After isotropic etching, the radian of floating gate polysilicon is different.
Third step S3: form growth regulation one side wall, the second side wall, source polysilicon lines on floating gate polysilicon layer；
4th step S4: according to the radian size that described floating gate polysilicon layer isotropic etching is formed, to first
Side wall performs different wet methods and is laterally etched back to the time；
5th step S5: with the first side wall as mask, by dry etching floating gate polysilicon, to form final floating boom point
End；
6th step S6: form tunnel oxide, wordline and wordline side wall.
In the fourth step s 4, in the 4th step, the radian of described formation is the biggest (as indicated at 61), needs
Perform the process time that horizontal wet method is etched back to the longest.In the fourth step s 4, the radian of described formation is the least (such as accompanying drawing mark
Shown in note 62), need to perform the process time that horizontal wet method is etched back to the shortest.
In the present invention, according to the radian size that described floating gate polysilicon layer isotropic etching is formed, to first
Side wall performs different wet methods and is laterally etched back to the time；Make it possible to obtain Split-gate flash memory and stablize floating boom tip.And,
The method of the present invention is tested by the present inventor, and the method for the experimental result display present invention is obtained in that grid-division flash
It is most advanced and sophisticated that floating boom stablized by memorizer, thus the erasing of the flash memory avoided or become inefficacy.
It should be noted that between first step S1 and second step S2 and at second step S2 and third step S3
Between and between third step S3 and the 4th step S4 etc., other mark of Split-gate flash memory manufacturing process can be performed
Quasi-processing step, unrelated with the key point of the present invention due to other at this, omit at this.
Preferably, described acquisition Split-gate flash memory is stablized the most advanced and sophisticated technique manufacturing method of floating boom and is advantageously used for system
Make Split-gate flash memory.
Furthermore, it is necessary to explanation, unless stated otherwise or point out, otherwise the term in description " first ", " the
Two ", " the 3rd " etc. describe be used only for distinguishing in description each assembly, element, step etc. rather than for representing each
Logical relation between assembly, element, step or ordering relation etc..
Although it is understood that the present invention discloses as above with preferred embodiment, but above-described embodiment being not used to
Limit the present invention.For any those of ordinary skill in the art, without departing under technical solution of the present invention ambit,
Technical solution of the present invention is made many possible variations and modification by the technology contents that all may utilize the disclosure above, or is revised as
Equivalent embodiments with change.Therefore, every content without departing from technical solution of the present invention, according to the technical spirit pair of the present invention
Any simple modification made for any of the above embodiments, equivalent variations and modification, all still fall within the scope of technical solution of the present invention protection
In.
But also it should be understood that the present invention is not limited to specific method described herein, compound, material, system
Making technology, usage and application, they can change.Should also be understood that term described herein is used merely to describe specific
Embodiment rather than be used for limit the scope of the present invention.Must be noted that herein and in claims use
Singulative " one ", " a kind of " and " being somebody's turn to do " include complex reference, unless context explicitly indicates that contrary.Therefore, example
As, the citation to " element " means the citation to one or more elements, and includes known to those skilled in the art
Its equivalent.Similarly, as another example, the citation of " step " or " device " is meaned to one or
Multiple steps or the citation of device, and potentially include secondary step and second unit.Should manage with broadest implication
Solve all conjunctions used.Therefore, word "or" should be understood that definition rather than the logical exclusive-OR with logical "or"
Definition, unless context explicitly indicates that contrary.Structure described herein will be understood as also quoting from the function of this structure
Equivalent.Can be interpreted that the language of approximation should be understood, like that unless context explicitly indicates that contrary.
Claims (10)
1. one kind obtains Split-gate flash memory and stablizes the technique manufacturing method that floating boom is most advanced and sophisticated, it is characterised in that including:
First step: sequentially form coupling oxide layer and floating gate polysilicon layer on substrate, and at described floating gate polysilicon layer
Upper formation floating boom silicon nitride layer, then arranges mask, and forms the pattern of described mask；
Second step: followed by the described mask forming pattern described floating boom silicon nitride layer performed etching and ensure floating boom simultaneously
Polysilicon has certain loss amount to prevent the floating boom silicon nitride residue of open area, be then based on floating boom silicon nitride etch with
After floating gate polysilicon residual thickness utilize feedback system and isotropic etching make isotropic etching after floating gate polysilicon
Residual thickness is identical, ultimately forms the floating gate polysilicon with different radian, when radian size depends on isotropic etching
Between；After floating boom silicon nitride etch, the residual thickness of floating gate polysilicon is different in this step, the isotropic of floating gate polysilicon
Etching need to select the different time to keep the residual thickness after isotropic etching identical, therefore, isotropic etching with
The radian of rear floating gate polysilicon is different.
Third step: form the first side wall, the second side wall, source polycrystalline on the floating gate polysilicon layer of floating boom silicon nitride open area
Silicon line；
4th step: according to the radian size that described floating gate polysilicon layer isotropic etching is formed, the first side wall is held
The different wet method of row is laterally etched back to the time；
5th step: with the first side wall as mask, by dry etching floating gate polysilicon, most advanced and sophisticated to form final floating boom.
Acquisition Split-gate flash memory the most according to claim 1 stablizes the technique manufacturing method that floating boom is most advanced and sophisticated, its feature
It is also to include the 6th step: form tunnel oxide, wordline and wordline side wall.
Acquisition Split-gate flash memory the most according to claim 1 stablizes the technique manufacturing method that floating boom is most advanced and sophisticated, its feature
It is, in the 4th step, in the case of the radian of described formation varies in size, needs the first side wall is performed different horizontal strokes
To the wet method etch-back time.
Acquisition Split-gate flash memory the most according to claim 1 and 2 stablizes the technique manufacturing method that floating boom is most advanced and sophisticated, and it is special
Levying and be, in the 4th step, the radian of described formation is the biggest, needs to perform process time that horizontal wet method is etched back to more
Long.
Acquisition Split-gate flash memory the most according to claim 1 and 2 stablizes the technique manufacturing method that floating boom is most advanced and sophisticated, and it is special
Levying and be, the radian of described formation is the least, needs to perform the process time that horizontal wet method is etched back to the shortest.
6. stablize, according to the acquisition Split-gate flash memory one of claim 2 to 5 Suo Shu, the technique manufacturing method that floating boom is most advanced and sophisticated,
It is characterized in that, in the second step, the radian of floating gate polysilicon depends on the etching period of isotropic etching.
Acquisition Split-gate flash memory the most according to claim 1 and 2 stablizes the technique manufacturing method that floating boom is most advanced and sophisticated, and it is special
Levying and be, in the second step, the etching period of isotropic etching is the longest, and the radian of floating gate polysilicon is the biggest.
Acquisition Split-gate flash memory the most according to claim 1 and 2 stablizes the technique manufacturing method that floating boom is most advanced and sophisticated, and it is special
Levying and be, in the second step, the etching period of isotropic etching is the shortest, and the radian of floating gate polysilicon is the least.
Acquisition Split-gate flash memory the most according to claim 1 and 2 stablizes the technique manufacturing method that floating boom is most advanced and sophisticated, and it is special
Levying and be, described acquisition Split-gate flash memory is stablized the most advanced and sophisticated technique manufacturing method of floating boom and is used for manufacturing grid-division flash storage
Device.
Acquisition Split-gate flash memory the most according to claim 1 and 2 stablizes the technique manufacturing method that floating boom is most advanced and sophisticated, its
Being characterised by, described substrate is silicon substrate.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070098291A (en) * | 2006-03-31 | 2007-10-05 | 주식회사 엑셀반도체 | Self align type flash memory device and method of forming the same |
| CN104538367A (en) * | 2014-12-30 | 2015-04-22 | 上海华虹宏力半导体制造有限公司 | Mirror image split gate flash memory and forming method thereof |
| CN105679713A (en) * | 2016-04-26 | 2016-06-15 | 上海华虹宏力半导体制造有限公司 | Method for manufacturing flash memories |
-
2016
- 2016-10-12 CN CN201610890802.3A patent/CN106229316B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070098291A (en) * | 2006-03-31 | 2007-10-05 | 주식회사 엑셀반도체 | Self align type flash memory device and method of forming the same |
| CN104538367A (en) * | 2014-12-30 | 2015-04-22 | 上海华虹宏力半导体制造有限公司 | Mirror image split gate flash memory and forming method thereof |
| CN105679713A (en) * | 2016-04-26 | 2016-06-15 | 上海华虹宏力半导体制造有限公司 | Method for manufacturing flash memories |
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