CN106220982A - 集成电路或rfid标签元器件用保护膜 - Google Patents

集成电路或rfid标签元器件用保护膜 Download PDF

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CN106220982A
CN106220982A CN201610652074.2A CN201610652074A CN106220982A CN 106220982 A CN106220982 A CN 106220982A CN 201610652074 A CN201610652074 A CN 201610652074A CN 106220982 A CN106220982 A CN 106220982A
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Abstract

本发明公开了一种集成电路或RFID标签元器件用保护膜，属于电子元器件领域，其原料由乙烯‑丙烯酸共聚物、丁二烯基三乙氧基硅、杜仲胶、草木灰、低品位氧化锌矿、硬脂酸、沸石粉和脂肪酸聚乙二醇酯组成；本发明制得的厚度为10‑100μm的薄膜或者厚度为30‑100μm的涂覆膜，以200℃ ×1 小时进行处理后的30℃下的拉伸强度达到51MPa以上、伸长率为在5％以下，具有优异的机械性能，本发明可以作为自支撑膜或者复合膜的基膜；其表面电阻值为1×106Ω≤ Rs＜1×109Ω，非接触防静电电压值达到12kv以上，具有优异的防静电性能，同时，具有优异的耐酸碱耐高温低温性能。

Description

集成电路或RFID标签元器件用保护膜
本申请为中国专利：申请号2016104352901；发明名称：电子元器件用保护膜；申请日：2016.06.18的分案申请。
技术领域
本发明涉及电子元器件领域，特别涉及一种电子元器件用保护膜。
背景技术
电子元器件是构成电子设备或者机电设备的重要组成部分，电子元器件的种类繁多，而且体积相对较小，在电子设备中常常较为零散地分布。但是，由于电子元器件在使用过程中，常常受环境和周围元器件的影响而产生变形、被氧化或者容易被静电干扰。
比如，太阳能电池背板，其要在户外环境甚至是恶劣的环境中使用，从而要求具有较高的机械性能以实现自支撑免受外界的物理损坏，要求具有优秀的抗氧化耐腐蚀性能；
又比如集成电路（IC）元器件、IC电子标签、LED、LCD等电子元器件，对于防静电的要求也很高，尤其是IC，静电对于电子元器件的影响主要包括：静电吸附灰尘、改变电路间的阻抗，影响产品的功能和寿命，因电场或电流破坏元件的绝缘或导体，使元器件不能工作（完全损坏），因瞬间的电场或电流产生的热，元器件受伤；
也就是说，因为产生变形、被氧化腐蚀或者静电的原因，往往会导致电子元器件的功能受到影响，进而使整个设备受到损害，造成重大的经济损失，有时候甚至会发生严重的人身伤害。
为了防止上述情况的发生，目前采用的方式包括涂覆膜、贴膜、复合膜等方式，效果也不尽如人意，比如现有的技术一般采用有机材料组成，其抗氧化防辐射性能较差，而且成本较高，不适合于工业化大生产应用。
发明内容
本发明的发明目的在于：提供一种电子元器件保护膜，这种保护膜同时具有优异的机械性能、优异的抗氧化防腐蚀性能和优异的防静电性能，以解决上述问题。
本发明采用的技术方案是这样的：一种电子元器件用膜，由下述重量百分比计的组分组成：
乙烯-丙烯酸共聚物 35-45%
硅烷偶联剂 3-5%
天然植物胶 15-25%
草木灰 2-5%
低品位氧化锌矿 15-20%
硬脂酸 3-5%
沸石粉 2-5%
脂肪酸聚乙二醇酯 1-3%；
上述组分总计为100%。
上述组分中，草木灰是草本和木本植物充分燃烧后的残余物，其中含有大量无机离子和微量元素，本发明的草木灰优选粉碎至粒径小于30μm；
低品位氧化锌矿是锌矿资源中占有量较多的矿产，其中由于锌含量较低，导致其利用率较低，资源浪费严重，本申请的发明人发现，典型的低品位氧化锌矿中的主要化学成分含量为：碳酸锌10.26%、硅酸锌2.19%. 硫化锌0.89%、铁锌尖晶石3.96%、二氧化硅25.35%，氧化钙28.05%、钛0.16%、钒0.38%和微量碱金属，本申请中的“低品位氧化锌矿”的组成也是指上述的组成，本申请将上述低品位氧化锌矿粉碎至粒径小于50μm后，并筛选出适宜的聚合物，与其他成分协同，得到的胶料可以制成薄膜，或者将胶料涂覆在电子元器件表面，可以具有优异的机械性能、优异的抗氧化防腐蚀性能和优异的防静电性能，同时，也对现有技术中浪费的草木灰、低品位氧化锌矿等资源进行了有效地回收利用，具有重大的经济效益和社会效益；
本发明的电子元器件用膜的制备方法为，包括以下步骤：
（1）称量：按所述比例进行称量；
（2）粉碎：将草木灰粉碎至粒径小于30μm，将低品位氧化锌矿粉碎至粒径小于50μm；
（3）熔融反应：将乙烯-丙烯酸共聚物、硅烷偶联剂、天然植物胶、草木灰、硬脂酸和脂肪酸聚乙二醇酯按所述比例混合，600r/min搅拌5min，然后加热至熔融状态，并在185℃下搅拌20min，然后加入所述比例的低品位氧化锌矿和沸石粉，在178℃下反应15min，得到胶料；
（4）制膜或涂覆：将步骤（3）得到的胶料，采用吹塑等工艺制成厚度为10-100μm的薄膜，或者采用涂覆的方式，得到厚度为30-100μm的薄膜。
作为优选的技术方案：所述硅烷偶联剂为异丁基三乙氧基硅烷。具有更佳的机械性能和抗氧化防腐蚀性能。
作为优选的技术方案：所述天然植物胶为杜仲胶。其综合性能更佳。当然，也可以采用其他植物胶，其他植物胶在使用时先水合，然后再与其他原料混合反应。
综上所述，由于采用了上述技术方案，本发明的有益效果是：本发明制得的厚度为10-100μm的薄膜或者厚度为30-100μm的涂覆膜，以200℃ ×1 小时进行处理后的30℃下的拉伸强度达到51MPa以上、伸长率为在5％以下，具有优异的机械性能，可以作为自支撑膜或者复合膜的基膜；其表面电阻值为1×106Ω≤ Rs＜1×109Ω，非接触防静电电压值达到12kv以上，具有优异的防静电性能，同时，具有优异的耐酸碱耐高温低温性能。
具体实施方式
下面对本发明作详细的说明。
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
实施例1：
一种电子元器件用膜，由下述重量份的组分组成：
乙烯-丙烯酸共聚物 40%
异丁基三乙氧基硅烷 3%
杜仲胶 25%
草木灰 3%
低品位氧化锌矿 16%
硬脂酸 5%
沸石粉 5%
脂肪酸聚乙二醇酯 3%
上述电子元器件用膜的制备方法为，包括以下步骤：
（1）称量：按所述比例进行称量；
（2）粉碎：将草木灰粉碎至粒径小于30μm，将低品位氧化锌矿粉碎至粒径小于50μm；
（3）熔融反应：将乙烯-丙烯酸共聚物、硅烷偶联剂、天然植物胶、草木灰、硬脂酸和脂肪酸聚乙二醇酯按所述比例混合，600r/min搅拌5min，然后加热至熔融状态，并在185℃下搅拌20min，然后加入所述比例的低品位氧化锌矿和沸石粉，在178℃下反应15min，得到胶料；
（4）制膜或涂覆：将步骤（3）得到的胶料，采用吹塑等工艺制成厚度为30μm的“保护膜A”；
性能测试：
A、防静电性能测试：
A1、表面电阻值：将“保护膜A”用于太阳能电池的背板，采用表面电阻测试仪测试其的表面电阻值，其值为3.21×107Ω；
A2：非接触防静电电压：
测试方法：将“保护膜A”用于太阳能电池的背板，测试太阳能电池静电电压，从2 kV开始增加，每次增加2 kV，直到20 kV为止，即测试静电电压分别为2 kV，4 kV，6 kV，8 kV，10kV，12 kV，14 kV，16 kV，18 kV，20 kV，平行测试5次，结果到12kv时，太阳能电池无任何损坏，功能完全正常，14kv时开始出现异常，即非接触防静电电压为12kv；
B、机械性能测试：
将“保护膜A”（1*10cm）以200℃ ×1 小时进行处理后的30℃下的拉伸强度为61.6MPa、伸长率为在3.1％；
C、抗氧化防腐蚀性能测试：
将“保护膜A”分别进行下述实验：
C1：耐酸性：浸入60g/L H2SO4溶液中7天后取出，结果无任何损坏，直至第10天后取出，出现细微损坏；
C2：耐碱性：浸入60g/LNaOH 溶液中7天后取出，结果无任何损坏，直至第9天后取出，出现细微损坏；
C3：耐高温耐湿：从室温在30min内加热到160℃，然后自然冷却，置于水中浸泡6h，取出，再从室温在30min内加热到160℃，然后自然冷却，如此循环10次，结果无任何损坏；
从上述性能测试结果看，保护膜A尤其适合用于太阳能电池背板，因为其机械性能和抗氧化防腐蚀性能尤其突出。
实施例2
一种电子元器件用膜，由下述重量百分比计的组分组成：
乙烯-丙烯酸共聚物 45%
丁二烯基三乙氧基硅 5%
杜仲胶 15%
草木灰 5%
低品位氧化锌矿 20%
硬脂酸 3%
沸石粉 4%
脂肪酸聚乙二醇酯 3%
上述电子元器件用膜的制备方法为，包括以下步骤：
（1）称量：按所述比例进行称量；
（2）粉碎：将草木灰粉碎至粒径小于30μm，将低品位氧化锌矿粉碎至粒径小于50μm；
（3）熔融反应：将乙烯-丙烯酸共聚物、硅烷偶联剂、天然植物胶、草木灰、硬脂酸和脂肪酸聚乙二醇酯按所述比例混合，600r/min搅拌5min，然后加热至熔融状态，并在185℃下搅拌20min，然后加入所述比例的低品位氧化锌矿和沸石粉，在178℃下反应15min，得到胶料；
（4）制膜或涂覆：将步骤（3）得到的胶料，将其涂覆于IC元器件表面，得到“保护膜B”；
性能测试：
A、防静电性能测试：
A1、表面电阻值：采用表面电阻测试仪测试其的表面电阻值，其值为6.36×108Ω；
A2：非接触防静电电压：
测试方法：测试其静电电压，从2 kV开始增加，每次增加2 kV，直到20 kV为止，即测试静电电压分别为2 kV，4 kV，6 kV，8 kV，10 kV，12 kV，14 kV，16 kV，18 kV，20 kV，平行测试5次，结果到16kv时，太阳能电池无任何损坏，功能完全正常，18kv时开始出现异常，即非接触防静电电压为16kv；
B、机械性能测试：
将“保护膜B” （1*10cm）以200℃ ×1 小时进行处理后的30℃下的拉伸强度为53.9MPa、伸长率为在3.7％；
C、抗氧化防腐蚀性能测试：
将“保护膜B”分别进行下述实验：
C1：耐酸性：浸入60g/L H2SO4溶液中6天后取出，结果无任何损坏，直至第8后取出，出现细微损坏；
C2：耐碱性：浸入60g/LNaOH 溶液中6天后取出，结果无任何损坏，直至第8天后取出，出现细微损坏；
C3：耐高温耐湿：从室温在30min内加热到160℃，然后自然冷却，置于水中浸泡6h，取出，再从室温在30min内加热到160℃，然后自然冷却，如此循环6次，结果无任何损坏，
从上述性能测试结果看，保护膜B尤其适合于集成电路（IC）元器件、RFID标签等，因为其防静电性能尤其突出。

Claims (1)

1.一种集成电路或RFID标签元器件用保护膜，其特征在于，由下述重量百分比计的组分组成：
乙烯-丙烯酸共聚物 45%
丁二烯基三乙氧基硅 5%
杜仲胶 15%
草木灰 5%
低品位氧化锌矿 20%
硬脂酸 3%
沸石粉 4%
脂肪酸聚乙二醇酯 3%。
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