CN106217190A - A kind of new technology throwing processing for sapphire wafer copper - Google Patents
A kind of new technology throwing processing for sapphire wafer copper Download PDFInfo
- Publication number
- CN106217190A CN106217190A CN201610570690.3A CN201610570690A CN106217190A CN 106217190 A CN106217190 A CN 106217190A CN 201610570690 A CN201610570690 A CN 201610570690A CN 106217190 A CN106217190 A CN 106217190A
- Authority
- CN
- China
- Prior art keywords
- polishing
- sapphire wafer
- new technology
- copper
- polishing fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
- B24B19/22—Single-purpose machines or devices for particular grinding operations not covered by any other main group characterised by a special design with respect to properties of the material of non-metallic articles to be ground
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B39/00—Burnishing machines or devices, i.e. requiring pressure members for compacting the surface zone; Accessories therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention relates to a kind of sapphire wafer copper and throw the new technology of processing, belong to LED substrate manufacture field.By selecting hardness three kinds of different polishing fluids from high to low, and the injection order of fixing polishing fluid, control the injecting time of polishing fluid, the cut that before progressively removing, one procedure causes, final products surface is made to form less damage layer, reaching to reduce the purpose of sapphire surface cut, this process operation is simple, and effect is obvious.
Description
Technical field
The present invention relates to a kind of sapphire wafer copper and throw the new technique of processing, belong to LED substrate manufacture field.
Background technology
Sapphire is the main backing material making blue-ray LED now.It is by high purity aluminium oxide through crystal pulling, section,
Grinding, chamfering, annealing, copper throwing, polishing and cleaning are made.Wherein copper is thrown is to remove early stage processing procedure to wafer product
Raw defect, removal quantity is generally 20 μm.
At present, there has been proposed a lot of technical scheme to improve sapphire polishing.Sapphire finishing method typically has
Machinery, chemistry and the finishing method of mechanochemistry.Mechanical polishing is to wafer polishing with hard abrasive material, but sapphire Mohs
Hardness is 9 to be only second to diamond, therefore mechanical lapping is difficult to its surface finish, and this processing method by mechanical force polishing
Make substrate surface of low quality, and there is deeper sub-surface damage, cause properties of product and processed finished products rate to reduce；Chemistry
Polish that its polishing velocity is low and that the polish precision of surface topography also can reduce；Chemically mechanical polishing combines mechanically and chemically
The advantage of polishing, has significantly improved in terms of polishing speed, polishing precision, surface damage, the above sapphire throwing
Light method has its respective feature, but surface of polished there will be etch pit and there are the problems such as microcrack on sub-surface.
Along with LED product is more and more higher to the requirement of luminescent properties, its process requirements whole to backing material sapphire
More and more higher.Each processing procedure can affect processing procedure below, especially copper and throw bad, can affect polishing effect.
Summary of the invention
In order to solve to exist in prior art the obvious technical problem of surface scratch in sapphire polishing process, the present invention carries
Go out a kind of process improving sapphire surface cut, disclose a kind of new work throwing processing for sapphire wafer copper
Skill, lays the foundation for follow-up glossing.
The technical solution used in the present invention is:
Prior art generally uses diamond polishing liquid to be polished sapphire wafer, hard due to diamond polishing liquid
Spend the highest, easily sapphire wafer is produced the defects such as cut, so that subsequent handling cannot be removed；The present invention selects hardness by height
To low three kinds of different polishing fluids, the injection order of fixing polishing fluid, the injecting time controlling polishing fluid progressively removes first one
The cut that operation causes, and then make final products surface form less damage layer, to reach to reduce sapphire surface cut
Significantly purpose.
Be previously discussed for sapphire wafer copper throw polishing fluid, including diamond polishing liquid, boron carbide (BC) polishing fluid,
Silicon dioxide (SiO2) polishing fluid.
The specific embodiment throwing processing for sapphire wafer copper is:
First spraying diamond polishing liquid on the polishing fluid board of injection diamond polishing liquid, polishing a few minutes reach certain
Removal quantity, subsequently use instead injection boron carbide polishing fluid board injection boron carbide polishing fluid, finally use injection silicon dioxide instead
The board injection silicon dioxide polishing solution of polishing fluid, in above-mentioned course of injection, the injecting time of each polishing fluid is different.
The injecting time of diamond polishing liquid is as mentioned above: spray 2s stops 3s；The injecting time of boron carbide polishing fluid is: spray
2s stops 2s；The injecting time of silicon dioxide polishing solution is: spray 3s stops 1s.
Diamond polishing liquid, boron carbide polishing fluid, the flow of silicon dioxide polishing solution use level pressure cambered surface spray regime control
System, controls polishing fluid uninterrupted and distribution thereof by controlling injecting time and spray configuration.
Using the inventive method that sapphire wafer is carried out copper throwing, the hardness utilizing three kinds of polishing fluids is different, i.e. can reach
Removal quantity can improve again its surface scratch, meanwhile, uses cambered surface spraying technique, is for being injected in that polishing fluid can more be
Copper panel surface.
Beneficial effects of the present invention: the present invention is followed successively by diamond/carbon boron/titanium dioxide from high in the end by selecting hardness
The polishing fluid that three kinds of hardness of silicon are different, fixes the sprinkling of three kinds of polishing fluids sequentially, and controls the spraying time of polishing fluid, to blue precious
Stone wafer carries out copper and throws processing, the cut that before progressively removing, sapphire wafer is caused by one procedure, and then makes final products
Surface forms less damage layer；The method can significantly improve the surface scratch of sapphire wafer, and can reach institute
The removal quantity needed, additionally, also shorten production process, reduces production cost, and the action effect of acquirement is obvious.
Detailed description of the invention
It is described in further detail below in conjunction with embodiment:
Embodiment 1:
Copper of the present invention is thrown manufacturing procedure and is carried out according to following operation:
After annealing of wafer cleans, sending between copper spiral seed separator, the board being provided with the different polishing fluid of injection between copper spiral seed separator carries out copper
Throw (a. diamond polishing liquid, b. boron carbide polishing fluid, c. silicon dioxide polishing solution).
Specifically comprise the following steps that
A, visual inspection；
B, differentiation thickness；
C, wax；
D, be equipped with diamond polishing liquid board copper throw；
E, be equipped with boron carbide polishing fluid board copper throw；
F, be equipped with silicon dioxide polishing solution board copper throw.
Wherein, step a, check that defective of tool throws face as copper, carry out labelling.
Step b, distinguishes the wafer of different-thickness, in order to wax.
Step c, waxes according to normal process, and measures its thickness, records data.
Step d, carries out copper throwing at the board being equipped with diamond polishing liquid, and the injecting time of diamond polishing liquid is: spray
2s stops 3s.
Step e, be equipped with boron carbide polishing fluid board carry out copper throwing, the injecting time of boron carbide polishing fluid be for: spray
Spill 2s and stop 2s.
Step f, be equipped with silicon dioxide polishing solution board carry out copper throwing, the injecting time of boron carbide polishing fluid be for:
Spray 3s and stop 1s.
Roughness and cut synopsis after table 1 conventional method and the inventive method polishing
Claims (6)
1. one kind for sapphire wafer copper throw processing new technology, it is characterised in that: described technique is: select hardness by height to
Low three kinds of different polishing fluids, fix the injection order of three kinds of polishing fluids, when controlling the injection of different polishing fluid in course of injection
Between sapphire wafer carried out copper throw processing.
2. the new technology throwing processing for sapphire wafer copper as claimed in claim 1, it is characterised in that: described hardness is by height
It is followed successively by three kinds of low polishing fluids: diamond polishing liquid, boron carbide polishing fluid, silicon dioxide polishing solution.
3. the new technology throwing processing for sapphire wafer copper as claimed in claim 1, it is characterised in that: described polishing fluid
Injection order is: first spraying diamond polishing liquid, injection boron carbide polishing fluid, finally sprays silicon dioxide polishing solution subsequently.
4. the new technology throwing processing for sapphire wafer copper as claimed in claim 1, it is characterised in that: described every kind of polishing
The injection of liquid is carried out respectively on respective polishing fluid board.
5. the new technology throwing processing for sapphire wafer copper as claimed in claim 1, it is characterised in that: described diamond is thrown
The injecting time of light liquid is: spray 2s stops 3s；The injecting time of boron carbide polishing fluid is: spray 2s stops 2s；Silicon dioxide polishing solution
Injecting time is: spray 3s stops 1s.
6. the new technology throwing processing for sapphire wafer copper as claimed in claim 1, it is characterised in that: described diamond is thrown
Light liquid, boron carbide polishing fluid, the flow of silicon dioxide polishing solution use level pressure cambered surface spray regime to control.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610570690.3A CN106217190A (en) | 2016-07-19 | 2016-07-19 | A kind of new technology throwing processing for sapphire wafer copper |
| PCT/CN2017/076570 WO2018014568A1 (en) | 2016-07-19 | 2017-03-14 | New process for copper polishing processing of sapphire wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610570690.3A CN106217190A (en) | 2016-07-19 | 2016-07-19 | A kind of new technology throwing processing for sapphire wafer copper |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106217190A true CN106217190A (en) | 2016-12-14 |
Family
ID=57531716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610570690.3A Pending CN106217190A (en) | 2016-07-19 | 2016-07-19 | A kind of new technology throwing processing for sapphire wafer copper |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN106217190A (en) |
| WO (1) | WO2018014568A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018014568A1 (en) * | 2016-07-19 | 2018-01-25 | 常州亿晶光电科技有限公司 | New process for copper polishing processing of sapphire wafer |
| CN114619298A (en) * | 2022-04-22 | 2022-06-14 | 中国有色桂林矿产地质研究院有限公司 | Polishing method of cubic boron nitride composite sheet |
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|---|---|---|---|---|
| US6019663A (en) * | 1998-02-20 | 2000-02-01 | Micron Technology Inc | System for cleaning semiconductor device probe |
| CN101602185A (en) * | 2009-06-22 | 2009-12-16 | 中国科学院上海硅酸盐研究所 | Multi-grade chemical mechanical polishing method of silicon carbide single-crystal surface |
| CN103286672A (en) * | 2012-02-29 | 2013-09-11 | 上海硅酸盐研究所中试基地 | SiC wafer polishing method capable of obtaining atomic step surface quickly |
| CN103506928A (en) * | 2012-06-19 | 2014-01-15 | 上海硅酸盐研究所中试基地 | Super-hard semiconductor material polishing method |
| CN104907895A (en) * | 2015-06-16 | 2015-09-16 | 哈尔滨秋冠光电科技有限公司 | Method for quickly processing doubly polished sapphire wafers |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006190890A (en) * | 2005-01-07 | 2006-07-20 | Fuji Photo Film Co Ltd | Polishing solution and polishing method using it |
| CN101016438A (en) * | 2007-02-09 | 2007-08-15 | 孙韬 | Alkaline computer hard disk polishing liquid and producing method thereof |
| CN106217190A (en) * | 2016-07-19 | 2016-12-14 | 常州亿晶光电科技有限公司 | A kind of new technology throwing processing for sapphire wafer copper |
-
2016
- 2016-07-19 CN CN201610570690.3A patent/CN106217190A/en active Pending
-
2017
- 2017-03-14 WO PCT/CN2017/076570 patent/WO2018014568A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6019663A (en) * | 1998-02-20 | 2000-02-01 | Micron Technology Inc | System for cleaning semiconductor device probe |
| CN101602185A (en) * | 2009-06-22 | 2009-12-16 | 中国科学院上海硅酸盐研究所 | Multi-grade chemical mechanical polishing method of silicon carbide single-crystal surface |
| CN103286672A (en) * | 2012-02-29 | 2013-09-11 | 上海硅酸盐研究所中试基地 | SiC wafer polishing method capable of obtaining atomic step surface quickly |
| CN103506928A (en) * | 2012-06-19 | 2014-01-15 | 上海硅酸盐研究所中试基地 | Super-hard semiconductor material polishing method |
| CN104907895A (en) * | 2015-06-16 | 2015-09-16 | 哈尔滨秋冠光电科技有限公司 | Method for quickly processing doubly polished sapphire wafers |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018014568A1 (en) * | 2016-07-19 | 2018-01-25 | 常州亿晶光电科技有限公司 | New process for copper polishing processing of sapphire wafer |
| CN114619298A (en) * | 2022-04-22 | 2022-06-14 | 中国有色桂林矿产地质研究院有限公司 | Polishing method of cubic boron nitride composite sheet |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018014568A1 (en) | 2018-01-25 |
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