CN106216831A - Laser-processing system and laser focusing method - Google Patents
Laser-processing system and laser focusing method Download PDFInfo
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- CN106216831A CN106216831A CN201610702455.7A CN201610702455A CN106216831A CN 106216831 A CN106216831 A CN 106216831A CN 201610702455 A CN201610702455 A CN 201610702455A CN 106216831 A CN106216831 A CN 106216831A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
Abstract
The present invention relates to a kind of laser-processing system and laser focusing method；Laser-processing system includes: laser generator；Focusing objective len, the laser that laser generator produces is converged by focusing objective len；CCD camera, by focusing objective len imaging, focusing objective len is the image-forming objective lens of CCD camera, and the focus of focusing objective len overlaps with the imaging focal plane of CCD camera；And, target mechanism, including the first light source, reflecting mirror and target, target fits on reflecting mirror, and the light that the first light source sends exposes on reflecting mirror, and through focusing objective len, and on the imaging focal plane of CCD camera, finally form the virtual image of target.Above-mentioned laser-processing system and use the laser focusing method of this laser-processing system, high to the resolution of image, error is little, focusing falls higher in the accurate focusing objective len height value searching degree of accuracy of wafer surface, the severity control of Laser Processing is played well control, the overall yield of Laser Processing can be improved.
Description
Technical field
The present invention relates to field of laser processing, particularly relate to laser-processing system and laser focusing method.
Background technology
In the laser fine Precision Machining fields such as LED wafer quasiconductor, generally use sapphire as backing material,
Depositing light-emitting district on a sapphire substrate, the thickness of luminous zone typically only has 3～6 μm, and sapphire thickness is usually 80～150
μm。
At present, typically process LED wafer with laser, to be separated into single little core particles.Laser Processing is general
Incide certain degree of depth from the sapphire face of wafer, the degree of depth is had the required precision of harshness.For certain thickness LED
Wafer, the quality of processing is had a direct impact by the degree of depth of Laser Processing.
The mode of traditional Laser Processing is first to find the height of wafer surface position by imaging system, then with this
Certain degree of depth of sinking on the basis of height is to process sapphire wafer sheet.Yet with the difference in sapphire wafer sheet production process
Different, the surface image that imaging system can be caused to obtain is variant, and between such as different batches product, grinding technics is different, and plated film is equal
Even difference, wafer thickness between batch is variant etc., and these factors can affect laser-processing system and produce in batches
There is error the position finding sapphire surface in journey, makes the degree of depth of Laser Processing and preset value variant thus cause processing effect
Occur bad, or can not find the particular location on surface, cause laser-processing system to cannot be introduced into next step flow process and produce report
Alert, all of these factors taken together ultimately results in the stability of laser-processing system and declines and affect the processing yield of entirety.
Summary of the invention
Based on this, it is necessary to provide a kind of laser-processing system that can improve Laser Processing precision.Meanwhile, one is also provided for
Plant the laser focusing method using this laser-processing system.
A kind of laser-processing system, including:
For producing the laser generator of laser；
Focusing objective len, the laser that described laser generator produces is converged by described focusing objective len；
CCD camera, by described focusing objective len imaging, described focusing objective len is the image-forming objective lens of described CCD camera, described
The focus of focusing objective len overlaps with the imaging focal plane of described CCD camera；And
Target mechanism, including the first light source, reflecting mirror and target, described target fits on reflecting mirror, described first light
The light that source sends exposes on described reflecting mirror, and through described focusing objective len and finally flat imaging Jiao of described CCD camera
The virtual image of target is formed on face.
Wherein in an embodiment, described target mechanism also includes being conjugated biconvex lens group, and described first light source is a little
Light source, the light that described first light source sends exposes on described reflecting mirror through described conjugation biconvex lens group.
Wherein in an embodiment, described CCD camera is 1/3 inch, and pixel is 300,000.
Wherein in an embodiment, also including the first transflection mirror, the light that described first light source sends is through described reflecting mirror
Reflex to described first transflection mirror, and reflex to described focusing objective len through described first transflection mirror.
Wherein in an embodiment, also including the second transflection mirror, the laser that described laser generator produces is through described the
Two transflection mirrors reflex to described focusing objective len, and the light that described first light source sends passes through described after described first transflection mirror reflection
Second transflection mirror is to described focusing objective len.
Wherein in an embodiment, also including microscope carrier, relative with described focusing objective len, described microscope carrier is used for carrying described
Wafer.
Wherein in an embodiment, described microscope carrier is transparent configuration, and described laser-processing system also includes secondary light source,
Described secondary light source is area source, and is arranged at the described microscope carrier side away from described focusing objective len.
Wherein in an embodiment, described target is that black tinfoil is made.
Wherein in an embodiment, the size of the numerical aperture of described focusing objective len is 0.42～0.8.
A kind of laser focusing method, comprises the following steps:
Above-mentioned laser-processing system is provided；
Regulate the height of described focusing objective len, so that described target is formed clearly on the imaging focal plane of described CCD camera
The virtual image of clear described target, records the height h1 of the most described focusing objective len；
Regulate the height of described focusing objective len, so that described wafer forms image clearly, record in described CCD camera
Under the height h2 of the most described focusing objective len；
Obtain the difference △ h=h1-h2 between h1 and h2；
On the basis of the picture rich in detail of target imaging described in h1 position, make focusing template；
Mate described focusing template, and compensate △ h and be worth to the theoretical level value of wafer surface.
Above-mentioned laser-processing system and use the laser focusing method of this laser-processing system, by the light in imaging system
Increasing a target with given shape inside road, this target finally forms one clearly inside the image of CCD camera
Clear image.This image easily identifies, template matching degree is high, and focusing objective len at target imaging height and position the most clearly and
The difference of wafer surface imaging height and position the most clearly is a definite value.In actual production process, can first find focusing
Object lens are at target imaging height and position h1 the most clearly, then plus offset △ h, it is possible to obtain more accurate wafer
The focusing objective len height value of the focal position on surface, then arranges certain depth of cut on the basis of this value and makes laser spot
It is positioned at the certain depth within wafer and just can process wafer.The laser focusing method that the present invention the provides identification to image
Degree height, error is little, and focusing falls higher in the accurate focusing objective len height value searching degree of accuracy of wafer surface, adds laser
The severity control of work plays well control, can improve the overall yield of Laser Processing.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to
The accompanying drawing of other embodiments is obtained according to these accompanying drawings.
Fig. 1 is the structure chart of laser-processing system in one embodiment of the invention；
Fig. 2 is the concrete structure figure of the acceptance of the bid target drone structure of laser-processing system shown in Fig. 1；
Fig. 3 is the concrete structure figure of reflecting mirror and target in laser-processing system shown in Fig. 1；
Fig. 4 is the flow chart of laser focusing method in one embodiment of the invention；
Fig. 5 is the virtual image figure of the target clearly formed on the imaging focal plane of CCD camera；
Fig. 6 is the image of the wafer clearly formed on the imaging focal plane of CCD camera；
Fig. 7 is the virtual image figure of the target clearly formed on the imaging focal plane of CCD camera under h1 height；
Fig. 8 is the virtual image figure of the target of the downward 2 μm formation of imaging focal plane in CCD camera；
Fig. 9 is the virtual image figure of the imaging focal plane upwards target that 2 μm are formed in CCD camera；
Figure 10 is the image of the wafer clearly formed on the imaging focal plane of CCD camera under h2 height；
Figure 11 is the image of the wafer of the downward 2 μm formation of imaging focal plane in CCD camera；
Figure 12 is the image of the imaging focal plane upwards wafer that 2 μm are formed in CCD camera.
Detailed description of the invention
For the ease of understanding the present invention, below with reference to relevant drawings, the present invention is described more fully.In accompanying drawing
Give the better embodiment of the present invention.But, the present invention can realize in many different forms, however it is not limited to herein
Described embodiment.On the contrary, providing the purpose of these embodiments is to make to understand the disclosure more
Add thorough comprehensive.
It should be noted that when element is referred to as " being fixed on " another element, and it can be directly on another element
Or element placed in the middle can also be there is.When an element is considered as " connection " another element, and it can be to be directly connected to
To another element or may be simultaneously present centering elements.Term as used herein " vertical ", " level ", " left ",
For illustrative purposes only, being not offered as is unique embodiment for " right " and similar statement.
Unless otherwise defined, all of technology used herein and scientific terminology and the technical field belonging to the present invention
The implication that technical staff is generally understood that is identical.The term used the most in the description of the invention is intended merely to describe tool
The purpose of the embodiment of body, it is not intended that in limiting the present invention.Term as used herein " and/or " include one or more
Arbitrary and all of combination of relevant Listed Items.
Seeing also Fig. 1, the laser-processing system 100 in one embodiment of the invention, including laser generator, (figure is not
Show), focusing objective len 110, CCD camera 120 and target mechanism 130.
Laser generator is used for producing laser.The laser that laser generator produces is converged by focusing objective len 110, and it converges
In the focus of focusing objective len 110.Laser-processing system 100 also includes that microscope carrier 140, microscope carrier 140 are used for carrying wafer 200.
Microscope carrier 140 is relative with focusing objective len 110, and the most in the present embodiment, wafer 200 is sapphire wafer sheet 200.
CCD camera 120 is by focusing objective len 110 imaging, so that whole laser-processing system 100 i.e. has Laser Processing merit
Can, possess again imaging function.Before Laser Processing, need the focus of laser is adjusted the surface to wafer 200, but with this
On the basis of surface location, the most specific height value processes wafer 200 in the height direction.
Focusing objective len 110 is the image-forming objective lens of CCD camera 120.The most in the present embodiment, the numerical value of focusing objective len 110
The size in aperture is 0.42～0.8；CCD camera 120 is 1/3 inch, and pixel is 300,000.CCD8 can be with outer computer 300 phase
Connecting, the display (not shown) of outer computer 300 can show the image of whole CCD camera 120 field range.
The focus of focusing objective len 110 overlaps with the imaging focal plane of CCD camera 120.Focusing objective len 110 is Laser Processing
Focus lamp, be also the image-forming objective lens of CCD camera 120.The focus of focusing objective len 110 and the imaging focal plane weight of CCD camera 120
Close, i.e. laser overlaps with the imaging focal plane of CCD camera 120 through the focus of focusing objective len 110.Focusing objective len 110 searches out
Processed wafer 200 surface height and position the most clearly, this position is also that laser spot converges at wafer 200 surface simultaneously
Position.
Seeing also Fig. 2 and Fig. 3, target mechanism 130 includes the first light source 131, reflecting mirror 133 and target 135.Target
135 fit on reflecting mirror 133.The light that first light source 131 sends exposes on reflecting mirror 133, and through focusing objective len 110,
Expose to microscope carrier 140.Owing to target 135 fits on reflecting mirror 133, gear has removed the light of part, according to light path principle of reversibility, poly-
The defocused light that reflects finally forms the virtual image of target 135 in CCD camera 120.
Concrete target 135 is made for black tinfoil, target 135 concretely triangular structure in the present embodiment, with resistance
Stopper divides the light that the first light source 131 sends, to reduce the luminous flux at target 135 regional reflex light, in final CCD camera 120
The picture of triangularity.The point source that first light source 131 specially dissipates, it can send white light.It is appreciated that target 135 also may be used
Make for other material, and, target 135 can be also other structures such as rectangle, is not limited to above-mentioned triangular structure.
Target mechanism 130 may also include conjugation biconvex lens group 137, and the first light source 131 is point source, the first light source 131
The light sent exposes on reflecting mirror 133 through conjugation biconvex lens group 137.
Referring to Fig. 1, laser-processing system 100 also includes the first transflection mirror 150 and the second transflection mirror 160.First
Part light can be reflected by transflection mirror 150 and the second transflection mirror 160, it is possible to part light is carried out transmission.
The light that first light source 131 sends is reflected mirror 133 and reflexes to the first transflection mirror 150, and through the first transflection mirror 150
Reflex to the second transflection mirror 160, and enter focusing objective len 110.The laser that laser generator produces reflects through the second transflection mirror 160
To focusing objective len 110, and wafer 200 is processed after being focused on by focusing objective len 110.
And focus on light transmission the first transflection mirror the 150, second transflection mirror 160 that back reflection returns and be positioned at the first transflection mirror
Biconvex lens group 170 between 150 and CCD camera 120, and eventually enter into imaging in CCD camera 120.
In order to strengthen the imaging effect of CCD camera 120, microscope carrier 140 is transparent configuration, and laser-processing system 100 also includes
Secondary light source 180.Secondary light source 180 is area source, and is arranged at the microscope carrier 140 side away from focusing objective len 110.
A secondary light source 180 concretely near-infrared light source.The light that secondary light source 180 sends can pass through microscope carrier 140,
Wafer 200, focusing objective len the 110, second transflection mirror the 160, first transflection mirror 150, biconvex lens group 170, may finally be at CCD
Camera 120 imaging is seen the surface of wafer 200 or the image of inside.
Additionally, see also Fig. 4, present invention also offers a kind of laser focusing method, it specifically includes following steps:
Step S410, it is provided that above-mentioned laser-processing system 100.
Step S420, the height of regulation focusing objective len 110, so that target 135 is on the imaging focal plane of CCD camera 120
Form the virtual image of clear target 135, record the height h1 of now focusing objective len 110.
See also Fig. 5, the height of regulation focusing objective len 110, so that target 135 is put down imaging Jiao of CCD camera 120
The virtual image forming target 135 on face is the most clear, records the height h1 of now focusing objective len 110.When h1 position, pass through CCD
Camera 120 cannot observe the situation on wafer 200 surface clearly.
Step S430, the height of regulation focusing objective len 110, so that wafer 200 is in CCD camera 120 imaging clearly, note
The height h2 of now focusing objective len 110 under record.
See also Fig. 6, again regulate the height of focusing objective len 110, so that wafer 200 shape in CCD camera 120
Become image clearly, record the height h2 of now focusing objective len 110.As shown in Figure 6, when h2 position, can clearly see
Observe wafer 200 surface condition.
Step S440, obtains the difference △ h=h1-h2 between h1 and h2.Difference between h1 and h2 is certain certain value △
h。
Step S450, on the basis of the picture rich in detail of h1 position target 135 imaging, makes focusing template.See also
Fig. 7, with the picture rich in detail of h1 position target 135 imaging for focusing template, now focusing objective len 110 height in the height direction
Value is h1.The template matching mark of CCD camera 120 is 99.12.See also Fig. 8 and Fig. 9, on the basis of h1, focusing objective len
110 move 2 μm the most respectively, although the imaging of CCD camera 120 thickens, coupling mark divides
It is not 98.88,98.55, when showing on the basis of the picture rich in detail of target 135 imaging, the shifting of the little scope of focusing objective len about 110
Dynamic, CCD camera 120 still can identify image.
See also Figure 10, and if with wafer 200 CCD camera 120 clearly be imaged as focus template, now gather
Focus objective lens 110 height value in the height direction is h2.The template matching mark of CCD camera 120 is 87.75.See also
Figure 11 and Figure 12, on the basis of h2, focusing objective len 110 moves 2 μm, CCD camera 120 the most respectively
Imaging thicken, coupling mark become 0.Coupling mark is 0 to show CCD camera 120 this image of None-identified.
If by described above it can be seen that directly find the position on wafer 200 surface, if wafer between batch
200 thickness have the difference of 2 μm, then can cause CCD camera 120 None-identified image.But by finding the virtual image position of target 135
The image put, in the μ m of target 135 virtual image height and position ± 2, CCD camera 120 still can identify and mate.Therefore originally
The laser focusing method that invention is provided has certain advantage in finding wafer 200 surface focus high process, finds Jiao
Point positional precision is higher, and more accurately, capturing ability is higher.
Step S460, coupling focusing template, and offset △ h obtain the theoretical level value on wafer 200 surface.In reality
In production, when first determining the picture rich in detail of target 135 imaging in CCD camera 120, the height h1 of focusing objective len 110, the most right
H1 is offset △ h, obtains the theoretical level value on wafer 200 surface.With the theoretical level value on wafer 200 surface as base
Standard, wafer 200 is also processed by regulation laser spot.
Above-mentioned laser-processing system 100 and use the laser focusing method of this laser-processing system 100, by imaging system
Increasing a target 135 with given shape inside the light path of system, this target 135 is finally at the image of CCD camera 120
The inside forms an image clearly.This image easily identifies, template matching degree is high, and focusing objective len 110 becomes at target 135
The difference of picture height and position and wafer 200 surface imaging height and position the most clearly the most clearly is a definite value.Actual raw
During product, can first find focusing objective len 110 at target 135 imaging height and position h1 the most clearly, then add offset
△ h, it is possible to obtain focusing objective len 110 height value of the focal position on more accurate wafer 200 surface, then with this
Arrange certain depth of cut on the basis of value to make laser spot be positioned at the certain depth within wafer 200 just can to process wafer
Sheet 200.The laser focusing method that the present invention provides is high to the resolution of image, and error is little, and focusing falls on wafer 200 surface
Accurate focusing objective len 110 height value to find degree of accuracy higher, the severity control of Laser Processing is played well control, can
To improve the overall yield of Laser Processing.
Each technical characteristic of embodiment described above can combine arbitrarily, for making description succinct, not to above-mentioned reality
The all possible combination of each technical characteristic executed in example is all described, but, as long as the combination of these technical characteristics is not deposited
In contradiction, all it is considered to be the scope that this specification is recorded.
Embodiment described above only have expressed the several embodiments of the present invention, and it describes more concrete and detailed, but also
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that, come for those of ordinary skill in the art
Saying, without departing from the inventive concept of the premise, it is also possible to make some deformation and improvement, these broadly fall into the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a laser-processing system, it is characterised in that including:
For producing the laser generator of laser；
Focusing objective len, the laser that described laser generator produces is converged by described focusing objective len；
CCD camera, by described focusing objective len imaging, described focusing objective len is the image-forming objective lens of described CCD camera, described focusing
The focus of object lens overlaps with the imaging focal plane of described CCD camera；And
Target mechanism, including the first light source, reflecting mirror and target, described target fits on reflecting mirror, and described first light source is sent out
The light gone out exposes on described reflecting mirror, and through described focusing objective len and final on the imaging focal plane of described CCD camera
Form the virtual image of target.
Laser-processing system the most according to claim 1, it is characterised in that described target mechanism also includes being conjugated lenticular
Mirror group, described first light source is point source, and the light that described first light source sends exposes to institute through described conjugation biconvex lens group
State on reflecting mirror.
Laser-processing system the most according to claim 1, it is characterised in that described CCD camera is 1/3 inch, pixel is
300000.
Laser-processing system the most according to claim 1, it is characterised in that also include the first transflection mirror, described first light
The light that source sends reflexes to described first transflection mirror through described reflecting mirror, and reflexes to described focusing through described first transflection mirror
Object lens.
Laser-processing system the most according to claim 4, it is characterised in that also include the second transflection mirror, described laser is sent out
The laser that raw device produces reflexes to described focusing objective len through described second transflection mirror, and the light that described first light source sends is through described the
Through described second transflection mirror to described focusing objective len after one transflection mirror reflection.
Laser-processing system the most according to claim 1, it is characterised in that also include microscope carrier, with described focusing objective len phase
Right, described microscope carrier is used for carrying described wafer.
Laser-processing system the most according to claim 6, it is characterised in that described microscope carrier is transparent configuration, described laser
System of processing also includes that secondary light source, described secondary light source are area source, and is arranged at described microscope carrier away from described focusing objective len
Side.
Laser-processing system the most according to claim 1, it is characterised in that described target is that black tinfoil is made.
Laser-processing system the most according to claim 1, it is characterised in that the size of the numerical aperture of described focusing objective len
It is 0.42～0.8.
10. a laser focusing method, it is characterised in that comprise the following steps:
Laser-processing system described in claim 1～9 any one is provided；
Regulate the height of described focusing objective len, so that described target forms clear institute on the imaging focal plane of described CCD camera
State the virtual image of target, record the height h1 of the most described focusing objective len；
Regulate the height of described focusing objective len, so that described wafer forms image clearly in described CCD camera, record this
The height h2 of Shi Suoshu focusing objective len；
Obtain the difference △ h=h1-h2 between h1 and h2；
On the basis of the picture rich in detail of target imaging described in h1 position, make focusing template；
Mate described focusing template, and compensate △ h and be worth to the theoretical level value of wafer surface.
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| CN109352994A (en) * | 2018-10-30 | 2019-02-19 | 北京星航机电装备有限公司 | A kind of fast determination method suitable for laser forming 3D printer focal plane |
| CN109530912A (en) * | 2018-12-28 | 2019-03-29 | 武汉华工激光工程有限责任公司 | Based on interior coaxial focusing mechanism and based on interior coaxial focusing method |
| CN113305418A (en) * | 2021-05-20 | 2021-08-27 | 苏州科韵激光科技有限公司 | Coaxial focus searching device for laser processing and laser processing method |
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| CN109530912A (en) * | 2018-12-28 | 2019-03-29 | 武汉华工激光工程有限责任公司 | Based on interior coaxial focusing mechanism and based on interior coaxial focusing method |
| CN109530912B (en) * | 2018-12-28 | 2021-02-09 | 武汉华工激光工程有限责任公司 | Focusing device based on inner coaxiality and focusing method based on inner coaxiality |
| CN113305418A (en) * | 2021-05-20 | 2021-08-27 | 苏州科韵激光科技有限公司 | Coaxial focus searching device for laser processing and laser processing method |
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