CN106216831B - Laser-processing system and laser focusing method - Google Patents
Laser-processing system and laser focusing method Download PDFInfo
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- CN106216831B CN106216831B CN201610702455.7A CN201610702455A CN106216831B CN 106216831 B CN106216831 B CN 106216831B CN 201610702455 A CN201610702455 A CN 201610702455A CN 106216831 B CN106216831 B CN 106216831B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Microscoopes, Condenser (AREA)
Abstract
The present invention relates to a kind of laser-processing system and laser focusing method；Laser-processing system includes：Laser generator；Focusing objective len, the laser that laser generator produces are converged by focusing objective len；CCD camera, is imaged by focusing objective len, and focusing objective len is the image-forming objective lens of CCD camera, and the focus of focusing objective len is overlapped with the imaging focal plane of CCD camera；And target mechanism, including the first light source, speculum and target, target fitted on speculum, the illumination that the first light source is sent is incident upon on speculum, and passes through focusing objective len, and the virtual image of target is finally formed on the imaging focal plane of CCD camera.Above-mentioned laser-processing system and the laser focusing method using the laser-processing system, it is high to the resolution of image, error is small, focus point fall wafer surface accurate focusing objective len height value find accuracy it is higher, good control is played to the deep-controlled of Laser Processing, the overall yield of Laser Processing can be improved.
Description
Technical field
The present invention relates to field of laser processing, more particularly to laser-processing system and laser focusing method.
Background technology
It is general to use sapphire as substrate material in the laser fine Precision Machining such as LED wafer semiconductor field,
Depositing light-emitting area on a sapphire substrate, generally only 3~6 μm of the thickness of luminous zone, sapphire thickness is usually 80~150
μm。
At present, LED wafer generally is processed with laser, to be separated into single small core particles.Laser Processing is general
Certain depth is incided from the sapphire face of wafer, the required precision for having harshness to depth.For certain thickness LED
Wafer, the depth of Laser Processing have a direct impact the quality of processing.
The mode of traditional Laser Processing is that the height of wafer surface position is first found with imaging system, then with this
Certain depth sink on the basis of height to process sapphire wafer piece.Yet with the difference in sapphire wafer piece production process
It is different, the surface image that imaging system obtains can be caused variant, for example grinding technics is different between different batches of product, plated film is equal
Even difference, wafer thickness between batch are variant etc., these factors can influence laser-processing system and produce in batches
There is error in the position that sapphire surface is found in journey, makes the depth of Laser Processing and preset value variant so as to cause processing effect
There is specific location that is bad, or can not find surface, cause laser-processing system to cannot be introduced into next step flow and produce report
Alert, the stability that all of these factors taken together ultimately results in laser-processing system declines and influences overall processing yield.
The content of the invention
Based on this, it is necessary to provide a kind of laser-processing system that can improve Laser Processing precision.Meanwhile also provide one
Kind uses the laser focusing method of the laser-processing system.
A kind of laser-processing system, including：
For producing the laser generator of laser；
Focusing objective len, the laser that the laser generator produces are converged by the focusing objective len；
CCD camera, is imaged by the focusing objective len, and the focusing objective len is the image-forming objective lens of the CCD camera, described
The focus of focusing objective len is overlapped with the imaging focal plane of the CCD camera；And
Target mechanism, including the first light source, speculum and target, the target are fitted on speculum, first light
The illumination that source is sent is incident upon on the speculum, and passes through the focusing objective len, and finally burnt flat in the imaging of the CCD camera
The virtual image of target is formed on face.
In one of the embodiments, the target mechanism further includes conjugation lenticular microscope group, and first light source is point
Light source, the light that first light source is sent are exposed on the speculum by the conjugation lenticular microscope group.
In one of the embodiments, the CCD camera is 1/3 inch, and pixel is 300,000.
In one of the embodiments, the first transflection mirror is further included, the light that first light source is sent is through the speculum
The first transflection mirror is reflexed to, and the focusing objective len is reflexed to by the first transflection mirror.
In one of the embodiments, the second transflection mirror is further included, the laser that the laser generator produces is through described the
Two transflection mirrors reflex to the focusing objective len, and the light that first light source is sent is after the first transflection mirror reflection through described
Second transflection mirror is to the focusing objective len.
In one of the embodiments, microscope carrier is further included, opposite with the focusing objective len, the microscope carrier is used to carry described
Wafer.
In one of the embodiments, the microscope carrier is transparent configuration, and the laser-processing system further includes secondary light source,
The secondary light source is area source, and is arranged at side of the microscope carrier away from the focusing objective len.
In one of the embodiments, the target is made of black tinfoil.
In one of the embodiments, the size of the numerical aperture of the focusing objective len is 0.42~0.8.
A kind of laser focusing method, comprises the following steps：
Above-mentioned laser-processing system is provided；
The height of the focusing objective len is adjusted, so that the target is formed clearly on the imaging focal plane of the CCD camera
The virtual image of the clear target, records the height h1 of the focusing objective len at this time；
The height of the focusing objective len is adjusted, so that the wafer forms clearly image, record in the CCD camera
Under the focusing objective len at this time height h2；
Obtain the difference △ h=h1-h2 between h1 and h2；
On the basis of the picture rich in detail being imaged by target described in h1 positions, focusing template is made；
The focusing template is matched, and compensates the theoretical level value that △ h are worth to wafer surface.
Above-mentioned laser-processing system and the laser focusing method using the laser-processing system, pass through the light in imaging system
One target with given shape of increase inside road, the target finally form one clearly inside the image of CCD camera
Clear image.The image easily identifies, template matches degree is high, and focusing objective len target be imaged most clearly height and position and
Most clearly the difference of height and position is a definite value for wafer surface imaging.In actual production process, focusing can be first found
Object lens are imaged most clearly height and position h1 in target, then plus offset △ h, it is possible to obtain more accurate wafer
The focusing objective len height value of the focal position on surface, then sets certain depth of cut to make laser spot on the basis of this value
Certain depth inside wafer can process wafer.Identification of the laser focusing method provided by the invention to image
Degree is high, and error is small, and it is higher that the accurate focusing objective len height value that focus point falls in wafer surface finds accuracy, to laser plus
The deep-controlled of work plays good control, can improve the overall yield of Laser Processing.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, without creative efforts, can be with
The attached drawing of other embodiment is obtained according to these attached drawings.
Fig. 1 is the structure chart of laser-processing system in one embodiment of the invention；
Fig. 2 is the concrete structure diagram of the acceptance of the bid target drone structure of laser-processing system shown in Fig. 1；
Fig. 3 is the concrete structure diagram of speculum and target in laser-processing system shown in Fig. 1；
Fig. 4 is the flow chart of laser focusing method in one embodiment of the invention；
Fig. 5 is the virtual image figure of the clearly target formed on the imaging focal plane of CCD camera；
Fig. 6 is the image of the clearly wafer formed on the imaging focal plane of CCD camera；
Fig. 7 is the virtual image figure of the clearly target formed under h1 height on the imaging focal plane of CCD camera；
Fig. 8 is the virtual image figure in the target of the downward 2 μm of formation of imaging focal plane of CCD camera；
Fig. 9 is the virtual image figure in the target of the upward 2 μm of formation of imaging focal plane of CCD camera；
Figure 10 is the image of the clearly wafer formed under h2 height on the imaging focal plane of CCD camera；
Figure 11 is the image in the wafer of the downward 2 μm of formation of imaging focal plane of CCD camera；
Figure 12 is the image in the wafer of the upward 2 μm of formation of imaging focal plane of CCD camera.
Embodiment
For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.In attached drawing
Give the better embodiment of the present invention.But the present invention can realize in many different forms, however it is not limited to herein
Described embodiment.On the contrary, the purpose for providing these embodiments is to make to understand more the disclosure
Add thorough and comprehensive.
It should be noted that when element is referred to as " being fixed on " another element, it can be directly on another element
Or there may also be element placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " horizontal ", " left side ",
For illustrative purposes only, it is unique embodiment to be not offered as " right side " and similar statement.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The normally understood implication of technical staff is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein " and/or " include one or more
The arbitrary and all combination of relevant Listed Items.
Also referring to Fig. 1, the laser-processing system 100 in one embodiment of the invention, including (figure is not for laser generator
Show), focusing objective len 110, CCD camera 120 and target mechanism 130.
Laser generator is used to produce laser.The laser that laser generator produces is converged by focusing objective len 110, it is converged
In in the focus of focusing objective len 110.Laser-processing system 100 further includes microscope carrier 140, and microscope carrier 140 is used to carry wafer 200.
Microscope carrier 140 is opposite with focusing objective len 110, and specifically in the present embodiment, wafer 200 is sapphire wafer piece 200.
CCD camera 120 is imaged by focusing objective len 110, so that whole laser-processing system 100 has Laser Processing work(
Can, but also with imaging function., it is necessary to adjust the focus of laser to the surface of wafer 200, but with this before Laser Processing
On the basis of surface location, specific height value processes wafer 200 downwards in the height direction.
Focusing objective len 110 is the image-forming objective lens of CCD camera 120.Specifically in the present embodiment, the numerical value of focusing objective len 110
The size in aperture is 0.42~0.8；CCD camera 120 is 1/3 inch, and pixel is 300,000.CCD8 can be with 300 phase of outer computer
Connection, the display (not shown) of outer computer 300 can show the image of whole 120 field range of CCD camera.
The focus of focusing objective len 110 is overlapped with the imaging focal plane of CCD camera 120.Focusing objective len 110 is both Laser Processing
Focus lamp, and image-forming objective lens of CCD camera 120.The focus of focusing objective len 110 and the imaging focal plane weight of CCD camera 120
Close, i.e., laser is overlapped by the focus of focusing objective len 110 with the imaging focal plane of CCD camera 120.Focusing objective len 110 searches out
Being processed 200 surface of wafer, most clearly height and position, the position are also that laser spot converges at 200 surface of wafer at the same time
Position.
Also referring to Fig. 2 and Fig. 3, target mechanism 130 includes the first light source 131, speculum 133 and target 135.Target
135 fit on speculum 133.The illumination that first light source 131 is sent is incident upon on speculum 133, and passes through focusing objective len 110,
Expose to microscope carrier 140.Since target 135 is fitted on speculum 133, gear has removed the light of part, according to light path principle, gathers
The defocused virtual image for reflecting light and target 135 finally being formed in CCD camera 120.
Specifically in the present embodiment, target 135 is made of black tinfoil, the concretely triangular structure of target 135, to hinder
The light that stopper point the first light source 131 is sent, to reduce the luminous flux in 135 region reflected light of target, in final CCD camera 120
Into the picture of triangle.First light source 131 is specially the point light source dissipated, it can send white light.It is appreciated that target 135 may be used also
It is made of other materials, also, target 135 can be also the other structures such as rectangle, be not limited to above-mentioned triangular structure.
Target mechanism 130 may also include conjugation lenticular microscope group 137, and the first light source 131 is point light source, the first light source 131
The light sent is exposed on speculum 133 by conjugation lenticular microscope group 137.
Referring to Fig. 1, laser-processing system 100 further includes the first transflection mirror 150 and the second transflection mirror 160.First
150 and second transflection mirror 160 of transflection mirror can reflect part light, and also part light can be transmitted.
The light that first light source 131 is sent reflexes to the first transflection mirror 150 through speculum 133, and passes through the first transflection mirror 150
The second transflection mirror 160 is reflexed to, and enters focusing objective len 110.The laser that laser generator produces is reflected through the second transflection mirror 160
To focusing objective len 110, and wafer 200 is processed after being focused on by focusing objective len 110.
And focus on the light that back reflection is returned and pass through the first transflection mirror 150, the second transflection mirror 160 and positioned at the first transflection mirror
Lenticular microscope group 170 between 150 and CCD camera 120, and eventually enter into and be imaged in CCD camera 120.
In order to strengthen the imaging effect of CCD camera 120, microscope carrier 140 is transparent configuration, and laser-processing system 100 further includes
Secondary light source 180.Secondary light source 180 is area source, and is arranged at side of the microscope carrier 140 away from focusing objective len 110.
The concretely near-infrared light source of secondary light source 180.The light that secondary light source 180 is sent can pass through microscope carrier 140,
Wafer 200, focusing objective len 110, the second transflection mirror 160, the first transflection mirror 150, lenticular microscope group 170, may finally be in CCD
Camera 120 sees the surface of wafer 200 or the image of inside in being imaged.
In addition, also referring to Fig. 4, present invention also offers a kind of laser focusing method, it specifically includes following steps：
Step S410, there is provided above-mentioned laser-processing system 100.
Step S420, adjusts the height of focusing objective len 110, so that target 135 is on the imaging focal plane of CCD camera 120
The virtual image of clear target 135 is formed, records the height h1 of focusing objective len 110 at this time.
Please refer to fig. 5, the height of focusing objective len 110 is adjusted, so that target 135 is burnt flat in the imaging of CCD camera 120
It is most clear that the virtual image of target 135 is formed on face, records the height h1 of focusing objective len 110 at this time.At h1 positions, pass through CCD
Camera 120 can not observe the situation on clearly 200 surface of wafer.
Step S430, adjusts the height of focusing objective len 110, so that wafer 200 is clearly imaged in CCD camera 120, note
The height h2 of focusing objective len 110 at this time under record.
Also referring to the height of Fig. 6, again adjusting focusing objective len 110, so that the shape in CCD camera 120 of wafer 200
Into clearly image, the height h2 of focusing objective len 110 at this time is recorded.As shown in fig. 6, at h2 positions, can clearly see
Observe 200 surface condition of wafer.
Step S440, obtains the difference △ h=h1-h2 between h1 and h2.Difference between h1 and h2 is certain certain value △
h。
Step S450, on the basis of the picture rich in detail of the imaging of h1 positions target 135, makes focusing template.Also referring to
Fig. 7, the picture rich in detail being imaged using h1 positions target 135 is template of focusing, the at this time height of focusing objective len 110 in the height direction
It is worth for h1.The template matches fraction of CCD camera 120 is 99.12.Also referring to Fig. 8 and Fig. 9, on the basis of h1, focusing objective len
110 downwardly and upwardly move 2 μm respectively in the height direction, although the imaging of CCD camera 120 thickens, matching fraction point
Not Wei 98.88,98.55, show by target 135 be imaged picture rich in detail on the basis of when, focusing objective len small-scale shifting about 110
Dynamic, CCD camera 120 still can identify image.
Also referring to Figure 10, and if with wafer 200 CCD camera 120 clearly be imaged as focusing template, gather at this time
The height value of focus objective lens 110 in the height direction is h2.The template matches fraction of CCD camera 120 is 87.75.Also referring to
Figure 11 and Figure 12, on the basis of h2, focusing objective len 110 downwardly and upwardly moves 2 μm respectively in the height direction, CCD camera 120
Imaging thicken, matching fraction become 0.Matching fraction shows 120 None- identified of the CCD camera image for 0.
By described above as can be seen that if the position on 200 surface of wafer is directly found, if wafer between batch
200 thickness have 2 μm of difference, then can cause 120 None- identified image of CCD camera.But by finding the virtual image position of target 135
The image put, CCD camera 120 still can be identified and matched in ± 2 μ m of 135 virtual image height and position of target.Therefore originally
The there is provided laser focusing method of invention has certain advantage in 200 surface focus high process of wafer is found, and finds burnt
Point positional precision higher, more accurately, capturing ability is stronger.
Step S460, matching focusing template, and offset △ h obtain the theoretical level value on 200 surface of wafer.In reality
In production, the height h1 of focusing objective len 110 during the picture rich in detail that target 135 is imaged in CCD camera 120 is first determined, it is subsequently right
H1 is offset △ h, obtains the theoretical level value on 200 surface of wafer.Using the theoretical level value on 200 surface of wafer as base
Standard, adjusts laser spot and wafer 200 is processed.
Above-mentioned laser-processing system 100 and the laser focusing method using the laser-processing system 100, by being in imaging
One target 135 with given shape of increase inside the light path of system, the target 135 is finally in the image of CCD camera 120
The inside forms a clearly image.The image easily identifies, template matches degree is high, and focusing objective len 110 target 135 into
As most clearly most clearly the difference of height and position is a definite value for height and position and the imaging of 200 surface of wafer.It is actual raw
During production, it can first find focusing objective len 110 and be imaged most clearly height and position h1 in target 135, then plus offset
△ h, it is possible to 110 height value of focusing objective len of the focal position on more accurate 200 surface of wafer is obtained, then with this
The certain depth that certain depth of cut is set on the basis of value makes laser spot be located inside wafer 200 can process wafer
Piece 200.Laser focusing method provided by the invention is high to the resolution of image, and error is small, and focus point falls on 200 surface of wafer
110 height value of accurate focusing objective len find accuracy it is higher, good control is played to the deep-controlled of Laser Processing, can
To improve the overall yield of Laser Processing.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope that this specification is recorded all is considered to be.
Embodiment described above only expresses the several embodiments of the present invention, its description is more specific and detailed, but simultaneously
Cannot therefore it be construed as limiting the scope of the patent.It should be pointed out that come for those of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
- A kind of 1. laser-processing system, it is characterised in that including：For producing the laser generator of laser；Focusing objective len, the laser that the laser generator produces are converged by the focusing objective len；CCD camera, is imaged by the focusing objective len, the focusing objective len be the CCD camera image-forming objective lens, the focusing The focus of object lens is overlapped with the imaging focal plane of the CCD camera；AndTarget mechanism, including the first light source, speculum and target, the target are fitted on speculum, the first light source hair The illumination gone out is incident upon on the speculum, and passes through the focusing objective len, and finally on the imaging focal plane of the CCD camera Form the virtual image of target.
- 2. laser-processing system according to claim 1, it is characterised in that the target mechanism further includes conjugation lenticular Microscope group, first light source are point light source, and the light that first light source is sent exposes to institute by the conjugation lenticular microscope group State on speculum.
- 3. laser-processing system according to claim 1, it is characterised in that the CCD camera is 1/3 inch, and pixel is 300000.
- 4. laser-processing system according to claim 1, it is characterised in that further include the first transflection mirror, first light The light that source is sent reflexes to the first transflection mirror through the speculum, and reflexes to the focusing by the first transflection mirror Object lens.
- 5. laser-processing system according to claim 4, it is characterised in that further include the second transflection mirror, the laser hair The laser that raw device produces reflexes to the focusing objective len through the second transflection mirror, and the light that first light source is sent is through described the Through the second transflection mirror to the focusing objective len after the reflection of one transflection mirror.
- 6. laser-processing system according to claim 1, it is characterised in that microscope carrier is further included, with the focusing objective len phase Right, the microscope carrier is used to carry wafer.
- 7. laser-processing system according to claim 6, it is characterised in that the microscope carrier is transparent configuration, the laser System of processing further includes secondary light source, and the secondary light source is area source, and is arranged at the microscope carrier away from the focusing objective len Side.
- 8. laser-processing system according to claim 1, it is characterised in that the target is made of black tinfoil.
- 9. laser-processing system according to claim 1, it is characterised in that the size of the numerical aperture of the focusing objective len For 0.42~0.8.
- A kind of 10. laser focusing method, it is characterised in that comprise the following steps：Laser-processing system described in claim 1~9 any one is provided；The height of the focusing objective len is adjusted, so that the target forms clear institute on the imaging focal plane of the CCD camera The virtual image of target is stated, records the height h1 of the focusing objective len at this time；The height of the focusing objective len is adjusted, so that wafer forms clearly image in the CCD camera, records institute at this time State the height h2 of focusing objective len；Obtain the difference △ h=h1-h2 between h1 and h2；On the basis of the picture rich in detail being imaged by target described in h1 positions, focusing template is made；The focusing template is matched, and compensates the theoretical level value that △ h are worth to wafer surface.
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| CN106735864B (en) * | 2016-12-22 | 2018-06-29 | 温州大学激光与光电智能制造研究院 | The coaxial vibration mirror scanning laser processing and device detected in real time |
| CN107052580B (en) * | 2017-06-21 | 2021-06-29 | 深圳市联赢激光股份有限公司 | Laser hybrid welding emergent device |
| CN109352994B (en) * | 2018-10-30 | 2021-06-01 | 北京星航机电装备有限公司 | Rapid determination method suitable for laser forming 3D printer focal plane |
| CN109530912B (en) * | 2018-12-28 | 2021-02-09 | 武汉华工激光工程有限责任公司 | Focusing device based on inner coaxiality and focusing method based on inner coaxiality |
| TWI826848B (en) * | 2020-12-21 | 2023-12-21 | 日商斯庫林集團股份有限公司 | Light irradiation device |
| CN113305418A (en) * | 2021-05-20 | 2021-08-27 | 苏州科韵激光科技有限公司 | Coaxial focus searching device for laser processing and laser processing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101569963A (en) * | 2009-03-10 | 2009-11-04 | 深圳市大族激光科技股份有限公司 | Laser cutting forming machine and method for uncapping soft and rigid combination board |
| CN102601521A (en) * | 2012-03-27 | 2012-07-25 | 北京理工大学 | Method for internally processing transparent medium by femtosecond laser pulse sequence |
| JP2012533434A (en) * | 2009-07-20 | 2012-12-27 | プレシテック カーゲー | Laser machining head and method for compensating for changes in the focal position of the laser machining head |
| CN104391291A (en) * | 2014-12-14 | 2015-03-04 | 中国科学院合肥物质科学研究院 | Fine particle laser radar system with adjustable focal position and self-calibration method |
| EP3045256A1 (en) * | 2014-11-20 | 2016-07-20 | Industrial Technology Research Institute | Three-dimensional laser processing apparatus and positioning error correction method |
-
2016
- 2016-08-22 CN CN201610702455.7A patent/CN106216831B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101569963A (en) * | 2009-03-10 | 2009-11-04 | 深圳市大族激光科技股份有限公司 | Laser cutting forming machine and method for uncapping soft and rigid combination board |
| JP2012533434A (en) * | 2009-07-20 | 2012-12-27 | プレシテック カーゲー | Laser machining head and method for compensating for changes in the focal position of the laser machining head |
| CN102601521A (en) * | 2012-03-27 | 2012-07-25 | 北京理工大学 | Method for internally processing transparent medium by femtosecond laser pulse sequence |
| EP3045256A1 (en) * | 2014-11-20 | 2016-07-20 | Industrial Technology Research Institute | Three-dimensional laser processing apparatus and positioning error correction method |
| CN104391291A (en) * | 2014-12-14 | 2015-03-04 | 中国科学院合肥物质科学研究院 | Fine particle laser radar system with adjustable focal position and self-calibration method |
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