CN106208965A - A kind of crystal oscillator - Google Patents
A kind of crystal oscillator Download PDFInfo
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- CN106208965A CN106208965A CN201610556227.3A CN201610556227A CN106208965A CN 106208965 A CN106208965 A CN 106208965A CN 201610556227 A CN201610556227 A CN 201610556227A CN 106208965 A CN106208965 A CN 106208965A
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- 239000013078 crystal Substances 0.000 title claims abstract description 244
- 238000001914 filtration Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 11
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- 239000000126 substance Substances 0.000 claims description 7
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- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/02—Details
- H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
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Abstract
The present invention provides a kind of crystal oscillator, and including the equivalent inverting amplifier biasing circuit being connected with default power supply respectively and at least one phase inverter, crystal oscillator also includes: presets bias voltage and provides end；First PMOS, grid provides end to be connected with default bias voltage, and source electrode is connected with default power supply；First NMOS tube, drain electrode is connected with the drain electrode of the first PMOS, has node between drain electrode and the drain electrode of the first PMOS of the first NMOS tube, and node is connected with the input of equivalence inverting amplifier biasing circuit, the source ground of the first NMOS tube；When crystal oscillator with default be connected without source crystal time, the grid of the first NMOS tube is connected with the default input pin without source crystal, node with equivalence inverting amplifier biasing circuit input be connected with the default output pin without source crystal respectively.The present invention can effectively reduce the power consumption of crystal oscillator, and the capacity of resisting disturbance of crystal oscillator is greatly improved simultaneously.
Description
Technical field
The present invention relates to electronic technology field, particularly relate to a kind of crystal oscillator.
Background technology
In prior art, a lot of crystal oscillators such as crystal oscillator shown in Fig. 1, although simple in construction, but merit
Consume the biggest.
In Fig. 1, Xl1 ' is the input pin without source crystal, and Xl2 ' is the output pin of active crystal, and XO ' is without source crystal
Output pin.Crystal oscillator in Fig. 1 does not has the electric current needed needed for current limliting, and crystal oscillator very big, causes crystal to shake
Swing PMOS in device (Positive channel-Metal-Oxide-Semiconductor, P-type mos) pipe
P1 ' and NMOS (Negative channel-Metal-Oxide-Semiconductor, N-type metal-oxide semiconductor (MOS)) manages
The phase inverter size that N1 ' forms is very big, and equivalent transconductance is big so that the power consumption of crystal oscillator is the biggest.
Summary of the invention
In view of the above problems, the purpose of the embodiment of the present invention is to provide a kind of crystal oscillator, to solve prior art
In the biggest problem of crystal oscillator power consumption.
In order to solve the problems referred to above, the embodiment of the invention discloses a kind of crystal oscillator, including respectively with default power supply
The equivalent inverting amplifier biasing circuit being connected and at least one phase inverter, described crystal oscillator also includes: preset biased electrical
Pressure provides end, and described default bias voltage provides end to be used for providing default bias voltage；First PMOS, described first PMOS
Grid and described default bias voltage provide end to be connected, the source electrode of described first PMOS is connected with described default power supply；The
One NMOS tube, the drain electrode of described first NMOS tube is connected with the drain electrode of described first PMOS, the drain electrode of described first NMOS tube
And there is between the drain electrode of described first PMOS node, described node and the input of described equivalence inverting amplifier biasing circuit
End is connected, the source ground of described first NMOS tube；When described crystal oscillator with default be connected without source crystal time, described first
The grid of NMOS tube is connected with the described default input pin without source crystal, described node and described equivalence inverting amplifier biasing
The input of circuit is connected with the described default output pin without source crystal respectively.
Alternatively, described crystal oscillator also includes: the first resistive module, and one end of described first resistive module is with described
The grid of the first NMOS tube be connected, when described crystal oscillator with described default be connected without source crystal time, described first resistive mode
The other end of block is connected with the described default input pin without source crystal；Second resistive module, described second resistive module is respectively
Drain electrode and described node with described first PMOS are connected；3rd resistive module, described 3rd resistive module is respectively with described
The drain electrode of the first NMOS tube is connected with described node；4th resistive module, when described crystal oscillator presets passive crystalline substance with described
When body is connected, described 4th resistive module respectively with the described default output pin without source crystal and described equivalence inverting amplifier
The input of biasing circuit is connected.
Alternatively, described crystal oscillator also includes: high-pass filtering module, and described high-pass filtering module is respectively with described
Four resistive module are connected with the input of described equivalence inverting amplifier biasing circuit.
Alternatively, the dimension scale of at least one phase inverter described is different.
The crystal oscillator of the embodiment of the present invention includes advantages below:
First, the electric current that crystal oscillator needs is little compared with crystal oscillator in prior art, and equivalent transconductance is the least, so node
The clock amplitude at place is the least, is not the full amplitude of oscillation, so the size of equivalence inverting amplifier biasing circuit is the most little, effectively reduces
The power consumption of crystal oscillator.
Second, the first PMOS providing end to be connected with default bias voltage forms equivalent current source, works as crystal oscillator
With default be connected without source crystal time, crystal oscillator utilize this equivalent current source to set crystal oscillator concussion needed for mutual conductance, crystal
The capacity of resisting disturbance of agitator is greatly reinforced.
3rd, by arranging high-pass filtering module before the input of equivalence inverting amplifier biasing circuit, can filter
Except the clocking noise preset without source crystal output.
4th, different by arranging the dimension scale of at least one phase inverter so that turning over of at least one phase inverter
Turning point is staggered mutually, phase inverter will not overturn simultaneously, it is to avoid pressure drop big on default power supply occurs, and effectively reduces power supply pressure
The fall interference to crystal oscillator, adds the capacity of resisting disturbance of crystal oscillator.
In order to solve the problems referred to above, the embodiment of the invention also discloses a kind of crystal oscillator, including respectively with default electricity
The equivalent inverting amplifier biasing circuit that source is connected and at least one phase inverter, described crystal oscillator also includes: preset biasing
Voltage provides end, and described default bias voltage provides end to be used for providing default bias voltage；First PMOS, a described PMOS
The grid of pipe provides end to be connected with described default bias voltage, and the source electrode of described first PMOS is connected with described default power supply；
First NMOS tube, the drain electrode of described first NMOS tube is connected with the drain electrode of described first PMOS, the leakage of described first NMOS tube
There is between the drain electrode of pole and described first PMOS node, the source ground of described first NMOS tube；First switch module, institute
The one end stating the first switch module is connected with described node, the other end of described first switch module and the anti-phase amplification of described equivalence
The input of device biasing circuit is connected；When described crystal oscillator with default be connected without source crystal time, described first NMOS tube
Grid is connected with the described default input pin without source crystal, the other end of described first switch module and described equivalence is anti-phase puts
The input of big device biasing circuit is connected with the described default output pin without source crystal respectively, and described first switch module closes
Close, and when described crystal oscillator be preset with source crystal be connected time, the other end of described first switch module and described etc.
The input of effect inverting amplifier biasing circuit is connected with the described output pin being preset with source crystal respectively, described first switch
Module disconnects.
Alternatively, described crystal oscillator also includes: the first resistive module, and one end of described first resistive module is with described
The grid of the first NMOS tube be connected, when described crystal oscillator with described default be connected without source crystal time, described first resistive mode
The other end of block is connected with the described default input pin without source crystal；Second resistive module, described second resistive module is respectively
Drain electrode and described node with described first PMOS are connected；3rd resistive module, described 3rd resistive module is respectively with described
The drain electrode of the first NMOS tube is connected with described node；4th resistive module, when described crystal oscillator with default without source crystal phase
Lian Shi, described 4th resistive module biases with the described default output pin without source crystal and described equivalence inverting amplifier respectively
The input of circuit be connected, and when described crystal oscillator be preset with source crystal be connected time, described 4th resistive module is divided
The not input with the described output pin being preset with source crystal and described equivalence inverting amplifier biasing circuit is connected.
Alternatively, described crystal oscillator also includes: high-pass filtering module, and described high-pass filtering module is respectively with described
Four resistive module are connected with the input of described equivalence inverting amplifier biasing circuit；Second switch module, described second switch
One end of module is connected with one end of described high-pass filtering module, the other end of described second switch module and described high-pass filtering
The other end of module is connected, when described crystal oscillator with described default be connected without source crystal time, described second switch module is disconnected
Open, and when described crystal oscillator with described be preset with source crystal be connected time, described second switch module close.
Alternatively, described first switch module is the first metal-oxide-semiconductor switch.
Alternatively, described second switch module is the second metal-oxide-semiconductor switch.
Alternatively, the dimension scale of at least one phase inverter described is different.
The crystal oscillator of the embodiment of the present invention includes advantages below:
First, the electric current needed for crystal oscillator is little compared with crystal oscillator in prior art, and equivalent transconductance is the least, so in advance
If without the output pin of source crystal or to be preset with the clock amplitude at the output pin of source crystal the least, it is not the full amplitude of oscillation, therefore
And the size of equivalence inverting amplifier biasing circuit is the most little, effectively reduce the power consumption of crystal oscillator.
Second, the first PMOS providing end to be connected with default bias voltage forms equivalent current source, works as crystal oscillator
With default be connected without source crystal time, crystal oscillator utilize this equivalent current source to set crystal oscillator concussion needed for mutual conductance, crystal
The capacity of resisting disturbance of agitator is greatly reinforced.
3rd, the first switch module is set between the input of node and equivalence inverting amplifier biasing circuit, and works as
Crystal oscillator with default be connected without source crystal time, first switch module Guan Bi, and when crystal oscillator with preset active crystalline substance
When body is connected, the first switch module disconnects, thus crystal oscillator is possible not only to support without source crystal, it is also possible to support active crystalline substance
Body.
4th, by arranging high-pass filtering module before the input of equivalence inverting amplifier biasing circuit, can filter
Except the clocking noise preset without source crystal output.
5th, different by arranging the dimension scale of at least one phase inverter so that turning over of at least one phase inverter
Turning point is staggered mutually, phase inverter will not overturn simultaneously, it is to avoid pressure drop big on default power supply occurs, and effectively reduces power supply pressure
The fall interference to crystal oscillator, adds the capacity of resisting disturbance of crystal oscillator.
Accompanying drawing explanation
Fig. 1 is the structural representation of crystal oscillator in prior art；
Fig. 2 is the structural representation of a kind of crystal oscillator embodiment of the present invention；
Fig. 3 is the structural representation of a kind of crystal oscillator specific embodiment of the present invention；
Fig. 4 be the present invention a kind of crystal oscillator specific embodiment in the structural representation of high-pass filtering module；
Fig. 5 is the structural representation of the another kind of crystal oscillator embodiment of the present invention；
Fig. 6 is the structural representation of the another kind of crystal oscillator specific embodiment of the present invention.
Detailed description of the invention
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, real with concrete below in conjunction with the accompanying drawings
The present invention is further detailed explanation to execute mode.
With reference to Fig. 2, it is shown that the structural representation of a kind of crystal oscillator embodiment of the present invention, this crystal oscillation utensil
Body can include equivalent inverting amplifier biasing circuit 1 and at least one phase inverter being connected respectively with default power supply vdd1, etc.
Effect inverting amplifier biasing circuit 1, at least one phase inverter are in series mutually, and crystal oscillator can also include: preset biased electrical
Pressure provides end 11, and presetting bias voltage provides end 11 to be used for providing default bias voltage vb1；First PMOS P11, a PMOS
The grid of pipe P11 provides end 11 to be connected with default bias voltage, and the source electrode of the first PMOS P11 is connected with default power supply vdd1；
First NMOS tube N11, the drain electrode of the first NMOS tube N11 is connected with the drain electrode of the first PMOS P11, the leakage of the first NMOS tube N11
There is between the drain electrode of pole and the first PMOS P11 the input of node J11, node J11 and equivalence inverting amplifier biasing circuit 1
End is connected, the source ground of the first NMOS tube N11；When crystal oscillator with default be connected without source crystal time, the first NMOS tube N11
Grid be connected with the default input pin Xl11 without source crystal, node J11 and equivalence inverting amplifier biasing circuit 1 input
End is connected with the default output pin XO11 without source crystal respectively.
Electric current needed for the crystal oscillator of the embodiment of the present invention is little compared with crystal oscillator in prior art, and equivalent transconductance is also
Little, so the clock amplitude at node J11 is the least, it is not the full amplitude of oscillation, so the size of equivalence inverting amplifier biasing circuit 1
And little, effectively reduce the power consumption of crystal oscillator.It addition, provide the first PMOS that end 11 is connected with default bias voltage
P11 forms equivalent current source, when crystal oscillator with default be connected without source crystal time, crystal oscillator can utilize this equivalent electric
Stream source sets the mutual conductance needed for crystal oscillator concussion, and the capacity of resisting disturbance of crystal oscillator is greatly reinforced.
Alternatively, in one particular embodiment of the present invention, with reference to Fig. 3, crystal oscillator can also include: the first electricity
Resistance module 12, one end of the first resistive module 12 is connected with the grid of the first NMOS tube N11, when crystal oscillator is passive with default
When crystal is connected, the other end of the first resistive module 12 is connected with the default input pin Xl11 without source crystal；And/or second electricity
Resistance module 13, the second resistive module 13 is connected with drain electrode and the node J11 of the first PMOS P11 respectively；And/or the 3rd resistive mode
Block 14, the 3rd resistive module 14 is connected with drain electrode and the node J11 of the first NMOS tube N11 respectively；And/or the 4th resistive module
15, when crystal oscillator with default be connected without source crystal time, the 4th resistive module 15 is drawn with the default output without source crystal respectively
Foot XO11 is connected with the input of equivalence inverting amplifier biasing circuit 1.
Wherein, the size of the first resistive module 12, the size of the second resistive module 13, the size of the 3rd resistive module 14,
The size of the 4th resistive module 15 can be different, or at least two is identical.Specifically, in one embodiment of the present of invention
In, with reference to Fig. 3, the first resistive module 12 can be the first resistance R11, and the second resistive module 13 can be the second resistance R12, the
Three resistive module 14 can be the 3rd resistance R13, and the 4th resistive module 15 can be the 4th resistance R14, the first resistance R11,
Two resistance R12, the 3rd resistance R13 and the 4th resistance R14 are as the protective resistance of crystal oscillator.
Alternatively, in one embodiment of the invention, with reference to Fig. 3, crystal oscillator can also include: high-pass filtering mould
Block 16, high-pass filtering module 16 respectively with the 4th resistive module 15 and equivalence inverting amplifier biasing circuit 1 input be connected,
High-pass filtering module 16 can filter the clocking noise preset without source crystal output.Specifically, in one embodiment of the present of invention
In, with reference to Fig. 4, high-pass filtering module 16 may include that capacitance module 161, one end of capacitance module 161 and the 4th resistive module
15 are connected, and the other end of capacitance module 161 is connected with the input of equivalence inverting amplifier biasing circuit 1；5th resistive module
162, one end of the 5th resistive module 162 is connected with the other end of capacitance module 161, another termination of the 5th resistive module 162
Ground.Specifically, with reference to Fig. 4, capacitance module 161 can be electric capacity C, and the 5th resistive module 162 can be the 5th resistance R15.
Specifically, the default clock without source crystal output is after high-pass filtering module 16 filters noise, and clock bias turns over
Turning point is not likely to be the clock bias upset point needed at least one phase inverter follow-up, and clock is through equivalence inverting amplifier biased electrical
Road 1 can correctly drive at least one follow-up phase inverter after converting.
Alternatively, in one embodiment of the invention, the dimension scale of at least one phase inverter can be different, makes
The upset point of at least one phase inverter is staggered mutually, phase inverter will not overturn simultaneously, it is to avoid big on default power supply vdd1
Pressure drop occurs, and reduces the power voltage-drop interference to crystal oscillator further, adds the capacity of resisting disturbance of crystal oscillator.
With reference to Fig. 2 and Fig. 3, equivalence inverting amplifier biasing circuit 1 can include the second PMOS P12, the second NMOS tube
N12 and the 6th resistance R16, at least one phase inverter can be the first phase inverter 2 and the second phase inverter 3, and the first phase inverter 2 is permissible
Including the 3rd PMOS P13 and the 3rd NMOS tube N13, the second phase inverter 3 can include the 4th PMOS P14 and the 4th NMOS tube
N14.Wherein, the dimension scale of the first phase inverter 2 can be the 3rd PMOS P13 and the dimension scale of the 3rd NMOS tube N13, example
Such as 2/1；The dimension scale of the second phase inverter 3 can be the 4th PMOS P14 and the dimension scale of the 4th NMOS tube N14, such as
2.5/1.In Fig. 2 and Fig. 3, CLK11 is the clock of crystal oscillator output.
The crystal oscillator of the embodiment of the present invention includes advantages below:
First, the electric current that crystal oscillator needs is little compared with crystal oscillator in prior art, and equivalent transconductance is the least, so node
The clock amplitude at place is the least, is not the full amplitude of oscillation, so the size of equivalence inverting amplifier biasing circuit is the most little, effectively reduces
The power consumption of crystal oscillator.
Second, the first PMOS providing end to be connected with default bias voltage forms equivalent current source, works as crystal oscillator
With default be connected without source crystal time, crystal oscillator utilize this equivalent current source to set crystal oscillator concussion needed for mutual conductance, crystal
The capacity of resisting disturbance of agitator is greatly reinforced.
3rd, by arranging high-pass filtering module before the input of equivalence inverting amplifier biasing circuit, can filter
Except the clocking noise preset without source crystal output.
4th, different by arranging the dimension scale of at least one phase inverter so that turning over of at least one phase inverter
Turning point is staggered mutually, phase inverter will not overturn simultaneously, it is to avoid pressure drop big on default power supply occurs, and effectively reduces power supply pressure
The fall interference to crystal oscillator, adds the capacity of resisting disturbance of crystal oscillator.
With reference to Fig. 5, it is shown that the structural representation of the another kind of crystal oscillator embodiment of the present invention, this crystal oscillator
Specifically can include equivalent inverting amplifier biasing circuit 10 and at least one phase inverter being connected respectively with default power supply vdd2,
Equivalence inverting amplifier biasing circuit 10, at least one phase inverter are in series mutually, and crystal oscillator can also include: preset biasing
Voltage provides end 21, and presetting bias voltage provides end 21 to be used for providing default bias voltage vb2；First PMOS P21, first
The grid of PMOS P21 provides end 21 to be connected with default bias voltage, the source electrode of the first PMOS P21 and default power supply vdd2 phase
Even；First NMOS tube N21, the drain electrode of the first NMOS tube N21 is connected with the drain electrode of the first PMOS P21, the first NMOS tube N21
Between drain electrode and the drain electrode of the first PMOS P21, there is node J21, the source ground of the first NMOS tube N21；First switch module
22, one end of the first switch module 22 is connected with node J21, and the other end of the first switch module 22 is inclined with equivalence inverting amplifier
The input of circuits 10 is connected；When crystal oscillator with default be connected without source crystal time, the grid of the first NMOS tube N21 is with pre-
If the input pin XI21 without source crystal is connected, the other end of the first switch module 22 and equivalence inverting amplifier biasing circuit 10
Input be connected with the default output pin XO21 without source crystal respectively, the first switch module 22 closes, and shakes when crystal
Swing device be preset with source crystal be connected time, the other end of the first switch module 22 and equivalence inverting amplifier biasing circuit 10 defeated
Entering end to be connected with the output pin XO22 being preset with source crystal respectively, the first switch module 22 disconnects.
Electric current needed for the crystal oscillator of the embodiment of the present invention is little compared with crystal oscillator in prior art, and equivalent transconductance is also
Little, so presetting the output pin XO21 without source crystal or being preset with the clock amplitude at the output pin XO22 of source crystal also
Little, it is not the full amplitude of oscillation, so the size of equivalence inverting amplifier biasing circuit 10 is the most little, effectively reduces crystal oscillator
Power consumption.It addition, the first PMOS P21 providing end 21 to be connected with default bias voltage forms equivalent current source, when crystal shakes
Swing device with default be connected without source crystal time, crystal oscillator can utilize this equivalent current source to set crystal oscillator concussion needed for across
Leading, the capacity of resisting disturbance of crystal oscillator is greatly reinforced.Additionally, at node J21 and equivalence inverting amplifier biasing circuit 10
First switch module 22 is set between input, and when crystal oscillator with default be connected without source crystal time, the first switch module
22 Guan Bis, and when crystal oscillator be preset with source crystal be connected time, the first switch module 22 disconnects, thus crystal oscillator
It is possible not only to support without source crystal, it is also possible to support active crystal.
Alternatively, the first switch module 22 can be the first metal-oxide-semiconductor switch.
Alternatively, in one particular embodiment of the present invention, with reference to Fig. 6, crystal oscillator can also include: the first electricity
Resistance module 23, one end of the first resistive module 23 is connected with the grid of the first NMOS tube N21, when crystal oscillator is passive with default
When crystal is connected, the other end of the first resistive module 23 is connected with the default input pin XI21 without source crystal；And/or second electricity
Resistance module 24, the second resistive module 24 is connected with drain electrode and the node J21 of the first PMOS P21 respectively；And/or the 3rd resistive mode
Block 25, the 3rd resistive module 25 is connected with drain electrode and the node J21 of the first NMOS tube N21 respectively；And/or the 4th resistive module
26, when crystal oscillator with default be connected without source crystal time, the 4th resistive module 26 is drawn with the default output without source crystal respectively
Foot XO21 is connected with the input of equivalence inverting amplifier biasing circuit 10, and works as crystal oscillator and be preset with source crystal phase
Lian Shi, the 4th resistive module 26 respectively be preset with source crystal output pin XO22 and equivalence inverting amplifier biasing circuit 10
Input be connected.
Wherein, the size of the first resistive module 23, the size of the second resistive module 24, the size of the 3rd resistive module 25,
The size of the 4th resistive module 26 can be different, or at least two is identical.Specifically, in one embodiment of the present of invention
In, with reference to Fig. 6, the first resistive module 23 can be the first resistance R21, and the second resistive module 24 can be the second resistance R22, the
Three resistive module 25 can be the 3rd resistance R23, and the 4th resistive module 26 can be the 4th resistance R24, the first resistance R21,
Two resistance R22, the 3rd resistance R23 and the 4th resistance R24 are as the protective resistance of crystal oscillator.
Alternatively, in one embodiment of the invention, with reference to Fig. 6, crystal oscillator can also include: high-pass filtering mould
Block 27, high-pass filtering module 27 respectively with the 4th resistive module 26 and equivalence inverting amplifier biasing circuit 10 input phase
Even；Second switch module 28, one end of second switch module 28 is connected with one end of high-pass filtering module 27, second switch module
The other end of 28 is connected with the other end of high-pass filtering module 27, when crystal oscillator with default be connected without source crystal time, second
Switch module 28 disconnects, and when crystal oscillator be preset with source crystal be connected time, second switch module 28 closes.
Alternatively, second switch module 28 can be the second metal-oxide-semiconductor switch, and the second metal-oxide-semiconductor switch can be with the first metal-oxide-semiconductor
Switch identical or different.
Specifically, in one embodiment of the invention, high-pass filtering module 27 may include that capacitance module, electric capacity mould
One end of block is connected with the 4th resistive module 26, the other end of capacitance module and the input of equivalence inverting amplifier biasing circuit 10
End is connected；5th resistive module, one end of the 5th resistive module is connected with the other end of capacitance module, the 5th resistive module another
One end ground connection.Specifically, capacitance module can be electric capacity, and the 5th resistive module can be the 5th resistance.
Specifically, the default clock without source crystal output is after high-pass filtering module 27 filters noise, and clock bias turns over
Turning point is not likely to be the clock bias upset point needed at least one phase inverter follow-up, and clock is through equivalence inverting amplifier biased electrical
Road 10 can correctly drive at least one follow-up phase inverter after converting.
Alternatively, in one embodiment of the invention, the dimension scale of at least one phase inverter can be different, makes
The upset point of at least one phase inverter is staggered mutually, phase inverter will not overturn simultaneously, it is to avoid big on default power supply vdd2
Pressure drop occurs, and reduces the power voltage-drop interference to crystal oscillator further, adds the capacity of resisting disturbance of crystal oscillator.
With reference to Fig. 5 and Fig. 6, equivalence inverting amplifier biasing circuit 10 can include the second PMOS P22, the second NMOS tube
N22 and the 6th resistance R25, at least one phase inverter can be the first phase inverter 20 and the second phase inverter 30, the first phase inverter 20
Can include that the 3rd PMOS P23 and the 3rd NMOS tube N23, the second phase inverter 30 can include the 4th PMOS P24 and the 4th
NMOS tube N24.Wherein, the dimension scale of the first phase inverter 20 can be the 3rd PMOS P23 and the size of the 3rd NMOS tube N23
Ratio, such as 2/1；The dimension scale of the second phase inverter 30 can be the size ratio of the 4th PMOS P24 and the 4th NMOS tube N24
Example, such as 2.5/1.In Fig. 5 and Fig. 6, CLK21 is the clock of crystal oscillator output.
The crystal oscillator of the embodiment of the present invention includes advantages below:
First, the electric current needed for crystal oscillator is little compared with crystal oscillator in prior art, and equivalent transconductance is the least, so in advance
If without the output pin of source crystal or to be preset with the clock amplitude at the output pin of source crystal the least, it is not the full amplitude of oscillation, therefore
And the size of equivalence inverting amplifier biasing circuit is the most little, effectively reduce the power consumption of crystal oscillator.
Second, the first PMOS providing end to be connected with default bias voltage forms equivalent current source, works as crystal oscillator
With default be connected without source crystal time, crystal oscillator utilize this equivalent current source to set crystal oscillator concussion needed for mutual conductance, crystal
The capacity of resisting disturbance of agitator is greatly reinforced.
3rd, the first switch module is set between the input of node and equivalence inverting amplifier biasing circuit, and works as
Crystal oscillator with default be connected without source crystal time, first switch module Guan Bi, and when crystal oscillator with preset active crystalline substance
When body is connected, the first switch module disconnects, thus crystal oscillator is possible not only to support without source crystal, it is also possible to support active crystalline substance
Body.
4th, by arranging high-pass filtering module before the input of equivalence inverting amplifier biasing circuit, can filter
Except the clocking noise preset without source crystal output.
5th, different by arranging the dimension scale of at least one phase inverter so that turning over of at least one phase inverter
Turning point is staggered mutually, phase inverter will not overturn simultaneously, it is to avoid pressure drop big on default power supply occurs, and effectively reduces power supply pressure
The fall interference to crystal oscillator, adds the capacity of resisting disturbance of crystal oscillator.
Each embodiment in this specification all uses the mode gone forward one by one to describe, what each embodiment stressed is with
The difference of other embodiments, between each embodiment, identical similar part sees mutually.
Although having been described for the preferred embodiment of the embodiment of the present invention, but those skilled in the art once knowing base
This creativeness concept, then can make other change and amendment to these embodiments.So, claims are intended to be construed to
The all changes including preferred embodiment and falling into range of embodiment of the invention and amendment.
Finally, in addition it is also necessary to explanation, in this article, the relational terms of such as first and second or the like be used merely to by
One entity or operation separate with another entity or operating space, and not necessarily require or imply these entities or operation
Between exist any this reality relation or order.And, term " includes ", " comprising " or its any other variant meaning
Containing comprising of nonexcludability, so that include that the process of a series of key element, method, article or terminal unit not only wrap
Include those key elements, but also include other key elements being not expressly set out, or also include for this process, method, article
Or the key element that terminal unit is intrinsic.In the case of there is no more restriction, by wanting that statement " including ... " limits
Element, it is not excluded that there is also other identical element in including the process of described key element, method, article or terminal unit.
Above to a kind of crystal oscillator provided by the present invention, it is described in detail, used herein the most individual
Principle and the embodiment of the present invention are set forth by example, and the explanation of above example is only intended to help to understand the present invention's
Method and core concept thereof；Simultaneously for one of ordinary skill in the art, according to the thought of the present invention, in specific embodiment party
All will change in formula and range of application, in sum, this specification content should not be construed as limitation of the present invention.
Claims (10)
1. a crystal oscillator, it is characterised in that include the equivalent inverting amplifier biased electrical being connected respectively with default power supply
Road and at least one phase inverter, described crystal oscillator also includes:
Presetting bias voltage and provide end, described default bias voltage provides end to be used for providing default bias voltage；
First PMOS, the grid of described first PMOS provides end to be connected with described default bias voltage, a described PMOS
The source electrode of pipe is connected with described default power supply；
First NMOS tube, the drain electrode of described first NMOS tube is connected with the drain electrode of described first PMOS, described first NMOS tube
Drain electrode and the drain electrode of described first PMOS between there is node, described node and described equivalence inverting amplifier biasing circuit
Input be connected, the source ground of described first NMOS tube；
When described crystal oscillator with default be connected without source crystal time, the grid of described first NMOS tube with described preset passive crystalline substance
The input pin of body be connected, described node and described equivalence inverting amplifier biasing circuit input respectively with described default nothing
The output pin of source crystal is connected.
Crystal oscillator the most according to claim 1, it is characterised in that also include:
First resistive module, one end of described first resistive module is connected with the grid of described first NMOS tube, when described crystal
Agitator with described default be connected without source crystal time, the other end of described first resistive module and described default defeated without source crystal
Enter pin to be connected；
Second resistive module, described second resistive module is connected with drain electrode and the described node of described first PMOS respectively；
3rd resistive module, described 3rd resistive module is connected with drain electrode and the described node of described first NMOS tube respectively；
4th resistive module, when described crystal oscillator with described default be connected without source crystal time, described 4th resistive module is divided
The not input with the described default output pin without source crystal and described equivalence inverting amplifier biasing circuit is connected.
Crystal oscillator the most according to claim 2, it is characterised in that also include:
High-pass filtering module, described high-pass filtering module is inclined with described 4th resistive module and described equivalence inverting amplifier respectively
The input of circuits is connected.
Crystal oscillator the most according to claim 1, it is characterised in that the dimension scale of at least one phase inverter described is mutual
Differ.
5. a crystal oscillator, it is characterised in that include the equivalent inverting amplifier biased electrical being connected respectively with default power supply
Road and at least one phase inverter, described crystal oscillator also includes:
Presetting bias voltage and provide end, described default bias voltage provides end to be used for providing default bias voltage；
First PMOS, the grid of described first PMOS provides end to be connected with described default bias voltage, a described PMOS
The source electrode of pipe is connected with described default power supply；
First NMOS tube, the drain electrode of described first NMOS tube is connected with the drain electrode of described first PMOS, described first NMOS tube
Drain electrode and the drain electrode of described first PMOS between there is node, the source ground of described first NMOS tube；
First switch module, one end of described first switch module is connected with described node, another of described first switch module
The input with described equivalence inverting amplifier biasing circuit is held to be connected；
When described crystal oscillator with default be connected without source crystal time, the grid of described first NMOS tube with described preset passive crystalline substance
The input pin of body is connected, the other end of described first switch module and the input of described equivalence inverting amplifier biasing circuit
It is connected with the described default output pin without source crystal respectively, described first switch module Guan Bi, and when described crystal oscillation
Device be preset with source crystal be connected time, the other end of described first switch module and described equivalence inverting amplifier biasing circuit
Input is connected with the described output pin being preset with source crystal respectively, and described first switch module disconnects.
Crystal oscillator the most according to claim 5, it is characterised in that also include:
First resistive module, one end of described first resistive module is connected with the grid of described first NMOS tube, when described crystal
Agitator with described default be connected without source crystal time, the other end of described first resistive module and described default defeated without source crystal
Enter pin to be connected；
Second resistive module, described second resistive module is connected with drain electrode and the described node of described first PMOS respectively；
3rd resistive module, described 3rd resistive module is connected with drain electrode and the described node of described first NMOS tube respectively；
4th resistive module, when described crystal oscillator with default be connected without source crystal time, described 4th resistive module respectively with
The described default output pin without source crystal is connected with the input of described equivalence inverting amplifier biasing circuit, and works as described
Crystal oscillator be preset with source crystal be connected time, described 4th resistive module is drawn with the described output being preset with source crystal respectively
Foot is connected with the input of described equivalence inverting amplifier biasing circuit.
Crystal oscillator the most according to claim 6, it is characterised in that also include:
High-pass filtering module, described high-pass filtering module is inclined with described 4th resistive module and described equivalence inverting amplifier respectively
The input of circuits is connected；
Second switch module, one end of described second switch module is connected with one end of described high-pass filtering module, and described second
The other end of switch module is connected with the other end of described high-pass filtering module, when described crystal oscillator is default passive with described
When crystal is connected, described second switch module disconnect, and when described crystal oscillator with described be preset with source crystal be connected time,
Described second switch module closes.
Crystal oscillator the most according to claim 5, it is characterised in that described first switch module is that the first metal-oxide-semiconductor is opened
Close.
Crystal oscillator the most according to claim 7, it is characterised in that described second switch module is that the second metal-oxide-semiconductor is opened
Close.
Crystal oscillator the most according to claim 5, it is characterised in that the dimension scale of at least one phase inverter described
Different.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1713513A (en) * | 2005-03-30 | 2005-12-28 | 钰创科技股份有限公司 | Low voltage annular oscillator with almost constant delay time |
| CN103023431A (en) * | 2012-09-14 | 2013-04-03 | 深圳先进技术研究院 | Method for enlarging tuning range and improving phase noise performance of voltage-controlled oscillator |
| CN103248319A (en) * | 2012-04-25 | 2013-08-14 | 嘉兴联星微电子有限公司 | Low-power consumption oscillating circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1713513A (en) * | 2005-03-30 | 2005-12-28 | 钰创科技股份有限公司 | Low voltage annular oscillator with almost constant delay time |
| CN103248319A (en) * | 2012-04-25 | 2013-08-14 | 嘉兴联星微电子有限公司 | Low-power consumption oscillating circuit |
| CN103023431A (en) * | 2012-09-14 | 2013-04-03 | 深圳先进技术研究院 | Method for enlarging tuning range and improving phase noise performance of voltage-controlled oscillator |
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