CN110460309A - A kind of injection locking frequency multiplier circuit and injection locked frequency multiplier - Google Patents
A kind of injection locking frequency multiplier circuit and injection locked frequency multiplier Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
- H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
Abstract
The embodiment of the present application belongs to radio frequency arts, it provides in a kind of injection locking frequency multiplier circuit and injection locked frequency multiplier, nonlinear effect is generated by harmonic oscillator module, extraction process is amplified to the harmonic signal of the default frequency range in the fundamental signal, and the harmonic energy in the multiple harmonic signal is injected into the oscillator module by transformer module, oscillator module carries out frequency-selecting processing to the multiple harmonic signal, thus within the preset frequency range by the Frequency Locking of the oscillator signal, reach the technical effect using the lower higher oscillator signal of fundamental signal output frequency of frequency, the lock-in range for solving existing injection locked frequency multiplier structure is smaller, the problem of significantly limiting the application range of frequency multiplier.
Description
Technical field
The embodiment of the present application belongs to radio frequency arts more particularly to a kind of injection locking frequency multiplier circuit and injection locking
Frequency multiplier.
Background technique
Currently, along with millimeter wave, the development of Terahertz Technology, millimeter wave, Terahertz communication, electronic countermeasure, radar,
Before the fields such as ELECTROMAGNETIC WEAPON, astronomy, medical imaging, non-destructive testing, environmental monitoring and safety inspection are there is being widely applied
Scape.On piece frequency source chip is as the nucleus module in wireless communication system, usually there are many planting implementation method, for example, can be with
Realize that upper frequency exports using lower frequency by frequency multiplier.
However, the lock-in range of existing injection locked frequency multiplier structure is smaller, the application of frequency multiplier is significantly limited
Range.
Summary of the invention
The embodiment of the present application provides a kind of injection locking frequency multiplier circuit and injection locked frequency multiplier, it is intended to solve existing note
The problem of lock-in range for entering to lock frequency multiplier structure is smaller, significantly limits the application range of frequency multiplier.
The embodiment of the present application proposes a kind of injection locking frequency multiplier circuit, connect with tuning voltage source and fundamental signal source,
The injection locks frequency multiplier circuit
It is connect with the tuning voltage source, for generating the oscillator module of oscillator signal；
It is connect with the fundamental signal source, for providing nonlinear effect, and it is repeatedly humorous according to fundamental signal generation
The harmonic oscillator module of wave signal；
It is connect respectively with the harmonic oscillator module and the oscillator module, for receiving the multiple harmonic letter
Number, and the harmonic energy in the multiple harmonic signal is injected into the transformer module of the oscillator module；
Wherein, the oscillator module is also used to carry out frequency-selecting processing to the multiple harmonic signal, thus by the vibration
Swing the Frequency Locking of signal within the preset frequency range.
The embodiment of the present application also provides a kind of injection locked frequency multipliers, comprising:
Fundamental signal source port；
Tuning voltage source port；And
Injection as described in any one of the above embodiments locks frequency multiplier circuit, the injection lock frequency multiplier circuit respectively with the fundamental wave
Signal source port is connected with the tuning voltage source port.
In a kind of injection locking frequency multiplier circuit and injection locked frequency multiplier that the embodiment of the present application proposes, occurred by harmonic wave
The nonlinear interaction of device module generates multiple harmonic signal according to fundamental signal, and multiple harmonic signal will by transformer module
Harmonic energy coupling injection oscillator module, oscillator module carries out frequency-selecting processing to the multiple harmonic signal, thus by institute
The Frequency Locking for stating oscillator signal within the preset frequency range, reaches higher using the lower fundamental signal output frequency of frequency
The technical effect of oscillator signal, and the adjustable purpose of output frequency for realizing oscillator signal.
Detailed description of the invention
In order to more clearly explain the technical solutions in the embodiments of the present application, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is some embodiments of the present application, for ability
For the those of ordinary skill of domain, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the structural schematic diagram for the injection locking frequency multiplier circuit that one embodiment of the application provides；
Fig. 2 is the structural schematic diagram for the injection locking frequency multiplier circuit that another embodiment of the application provides；
Fig. 3 is the structural schematic diagram for the transformer that one embodiment of the application provides；
Fig. 4 is the oscillator signal emulation signal for the injection locking frequency multiplier circuit output that one embodiment of the application provides
Figure.
Specific embodiment
In order to make those skilled in the art more fully understand application scheme, below in conjunction in the embodiment of the present application
Attached drawing, technical solutions in the embodiments of the present application are explicitly described, it is clear that described embodiment is the application one
The embodiment divided, instead of all the embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not doing
Every other embodiment obtained under the premise of creative work out, shall fall within the protection scope of the present application.
The description and claims of this application and term " includes " and their any deformations in above-mentioned attached drawing, meaning
Figure, which is to cover, non-exclusive includes.Such as process, method or system comprising a series of steps or units, product or equipment do not have
It is defined in listed step or unit, but optionally further comprising the step of not listing or unit, or optionally also wrap
Include the other step or units intrinsic for these process, methods, product or equipment.In addition, term " first ", " second " and
" third " etc. is for distinguishing different objects, not for description particular order.
Discrete electronic device in the embodiment of the present application refers to the electricity of independent circuits function, the basic unit for constituting circuit
Sub- device, for example, resistance, capacitor, inductor, electromechanical compo (connector, switch, relay etc.), electro-acoustic element, phototube
Part, sensitive components, display device, piezoelectric device etc..
Fig. 1 is the structural schematic diagram for the injection locking frequency multiplier circuit that one embodiment of the application proposes, referring to Fig. 1 institute
Show, the injection locking frequency multiplier circuit in the present embodiment is connect with tuning voltage source 10 and fundamental signal source 20, the injection locking
Frequency multiplier circuit includes:
It is connect with the tuning voltage source 10, for generating the oscillator module 30 of oscillator signal；
It connect with the fundamental signal source 20, is generated repeatedly for providing nonlinear effect, and according to the fundamental signal
The harmonic oscillator module 40 of harmonic signal；
It is connect respectively with the harmonic oscillator module 40 and the oscillator module 30, for receiving the multiple harmonic
Signal, and the harmonic energy in the multiple harmonic signal is injected into the transformer module 50 of the oscillator module 30；
Wherein, the oscillator module 30 is also used to carry out frequency-selecting processing to the multiple harmonic signal, thus will be described
The Frequency Locking of oscillator signal is within the preset frequency range.
In the present embodiment, by the nonlinear characteristic using harmonic oscillator module 40, so that harmonic oscillator module
40 can generate corresponding multiple harmonic signal according to fundamental signal, then pass through transformer module 50 for multiple harmonic signal
Harmonic energy be coupled in oscillator module 30 so that oscillator module 30 generate oscillator signal Frequency Locking in fundamental wave
To realize that the frequency of oscillator signal is adjustable in the frequency of the presupposition multiple of signal.In the present embodiment, harmonic oscillator module
The parameter of active device in 40 can need to be arranged according to user, thus to the nonlinear effect of harmonic oscillator module 40 into
Row control, fundamental signal generate multiple harmonic signal by the nonlinear interaction of the C class A amplifier A in harmonic oscillator module 40,
Oscillator module 30 amplifies extraction to the harmonic signal of the default frequency range in multiple harmonic signal, so that oscillator mould
In the frequency for the presupposition multiple that the frequency of oscillation for the oscillator signal that block 30 generates is locked to fundamental signal, for example, if according to user
The parameter by inductance and capacitor in oscillator module 30 is needed to be configured, so that the oscillator signal that oscillator module 30 generates
Frequency of oscillation be locked on the triple-frequency harmonics of fundamental signal, then by the injection locking frequency multiplier circuit be applied to frequency multiplier in, can
To be designed as a kind of injection locking frequency tripler.Further, the inductance and electricity in setting oscillator module 30 can also be passed through
The parameter of appearance make oscillator module 30 in multiple harmonic signal second harmonic signal or four-time harmonic signal amplify
It extracts, to realize that the output frequency of oscillator signal is adjustable.
In one embodiment, shown in Figure 2, the oscillator module 30 includes:
For utilizing cross-linked transistor to negative resistance effect is generated, to compensate the energy of the oscillator module 30
The negative resistance effect of loss generates unit 31；With
Unit 31 is generated with the negative resistance effect and the transformer module 50 is connect, for according to the harmonic energy pair
The oscillator signal carries out frequency-selecting processing, and the frequency-selecting unit by the Frequency Locking of the oscillator signal within the preset frequency range
32。
In the present embodiment, negative resistance effect generate unit 31 by setting cross-coupled pair pipe for a pair of of active device,
To generate negative resistance effect when oscillating circuit powers on, to compensate the energy loss in resonant tank, to keep oscillating circuit
Frequency of oscillation stabilization.Harmonic energy of the frequency-selecting unit 32 for the coupling injection of receiving transformer module 50, and to oscillator
The oscillator signal that module 30 generates carries out frequency-selecting processing, thus within the preset frequency range by the Frequency Locking of oscillator signal, it should
Predeterminated frequency range can be determined by the parameter of the active device in setting harmonic oscillator module 40, i.e., by base
The harmonic signal of default frequency range in wave signal amplifies extraction process, thus by the Frequency Locking of oscillator signal in the fundamental wave
In default frequency range in signal.
In one embodiment, shown in Figure 2, the harmonic oscillator module 40 includes:
It is connect with the fundamental signal source 20, for receiving the fundamental signal, and it is more according to fundamental signal generation
The harmonics generation unit 41 of rd harmonic signal；
It connect with the harmonics generation unit 41, believes for receiving the multiple harmonic signal, and to the multiple harmonic
Number carry out signal isolation signal isolation unit 42.
In the present embodiment, harmonics generation unit 41 is used to receive fundamental signal, and repeatedly humorous according to fundamental signal generation
Wave signal, specifically, harmonics generation unit 41 can by by transistor biasing in C class region so that transistor forms C
Class A amplifier A, to provide nonlinear interaction, at this point, fundamental signal generates multiple harmonic by the nonlinear interaction of C class A amplifier A
Signal.Multiple harmonic signal is coupled by signal isolation unit 42 with transformer module 50, thus by multiple harmonic signal
Output passes through the setting signal isolated location 42 between harmonics generation unit 41 and transformer module 50 into transformer module 50
Signal isolation processing is carried out to the multiple harmonic signal that harmonics generation unit 41 generates, avoids transformer module 50 that harmonic wave occurs
Unit 41 generates signal interference.
In one embodiment, harmonic energy is injected into oscillator module by transformer module 50 by multiple harmonic signal
In 30, the inductance in transformer module 50 can be used as resonant tank frequency-selecting inductance, inductance and oscillation in transformer module 50
Capacitor in device module 30 forms frequency selection circuit, completes frequency-selecting processing to multiple harmonic signal, extracts the harmonic wave letter of default frequency range
Number, thus within the preset frequency range by the Frequency Locking of oscillator signal.
In one embodiment, the on-chip transformer in transformer module 50 and oscillator module 30 are by fundamental signal
Triple-frequency harmonics Energy extraction is coupled in oscillator module 30, so that the output frequency for the oscillator signal that oscillator module 30 generates
Rate is locked on the frequency tripling of the fundamental signal of input.In the present embodiment, using the oscillation of injection locking frequency multiplier circuit output
The locking frequency range of signal is shown below:
Wherein, Δ ω is the angular frequency range that oscillator module 30 works, ωoFor the oscillating circuit work in oscillation module
Center angular frequency, IinjFor the electric current of the fundamental signal of injection locking frequency multiplier circuit input, IoscFor in oscillator module 30
Resonance circuit static direct current operating current, Q are the quality factor of the resonant tank in oscillator module 30.
Referring to formula (1) it is found that increase the lock-in range of the output frequency of injection locking frequency multiplier circuit, need to reduce vibration
Swing the resonance circuit static direct current operating current in the quality factor q and oscillator module 30 of the resonant tank in device module 30
Iosc, further, the electric current I of the fundamental signal of injection locking frequency multiplier circuit input can also be promotedinj.And oscillator module 30
In the quality factor q of resonant tank depend primarily on the value of the on piece varactor in frequency-selecting unit 32, but on piece varactor
The too small phase noise performance for influencing whether frequency multiplier of value.And inject the electric current of the fundamental signal of locking frequency multiplier circuit input
IinjIt is as big as possible, then do not interfere with the noiseproof feature of oscillator.In order to promote the fundamental wave of injection locking frequency multiplier circuit input
The electric current I of signalinj, can be by the way that the active device in harmonic oscillator module 40 be biased in C class region, at this point, active
The gate voltage of device is lower than threshold voltage, to maximize the third-order non-linear of active device, which can be MOS
Pipe.
In one embodiment, shown in Figure 2, the transformer module and injection level power supply and oscillator supply connect
It connects；
The transformer module 50 includes:
The primary coil being connect with the injection level power supply and the harmonic oscillator module 40；
Secondary coil for being connect with the oscillator supply and the oscillator module 30；
Wherein, the primary coil intercouples with the secondary coil, by the harmonic wave in the multiple harmonic signal
Energy coupling is injected into the oscillator module 30.
In one embodiment, the structural schematic diagram for the transformer that Fig. 3 provides for one embodiment of the application, referring to figure
Shown in 3, the centre tap of transformer is required connect on power supply, and for the convenience of cabling, they are directly led out transformation
The both sides of device, wherein the primary coil of transformer and the input terminal of transformer connect, the centre tap line conduct of primary coil
Level power supply port is injected, the injection level power supply signal provided for receiving injection level power supply, the output of secondary coil and transformer
End connection, the centre tap line of secondary coil is as oscillator supply port, the oscillation provided for reception oscillator power supply
Device power supply signal.
In one embodiment, shown in Figure 2, the primary coil includes the first inductance L1 and the second inductance L2, institute
It states the first inductance L1 to connect with the second inductance L2, the first of the first end of the first inductance L1 and the second inductance L2
End is connected to the injection level power supply, the second end of the first inductance L1 and the first signal of the harmonic oscillator module 40 altogether
Output end connection, the second end of the second inductance L2 are connect with the second signal output end of the harmonic oscillator module 40；
The secondary coil includes third inductance L3 and the 4th inductance L4, the third inductance L3 and the 4th inductance L4
Series connection, the first end of the third inductance L3 and the first end of the 4th inductance L4 are connected to the oscillator supply altogether, described
The second end of third inductance L3 is connect with the first signal end of the oscillator module 30, the second end of the 4th inductance L4 with
The second signal end of the oscillator module 30 connects.
In the present embodiment, the second end of the first inductance L1 and the second end of the second inductance L2 are used as transformer module 50
Input terminal, the second end of third inductance L3 and the second end of the 4th inductance L4 be used as the output end of transformer module 50,
In, the first inductance L1 and the second inductance L2 intercouple with third inductance L3 and the 4th inductance L4 respectively.
In one embodiment, shown in Figure 2, it includes the first transistor M1 and that the negative resistance effect, which generates unit 31,
Two-transistor M2；
The first end of the third end of the first transistor M1 and the second transistor M2 are connected to the transformer mould altogether
The first end of the first end of block 50, the third end of the second transistor M2 and the first transistor M1 are connected to the change altogether
The second end of the second end of depressor module 50, the second end of the first transistor M1 and the second transistor M2 are connected to altogether
Ground.
In the present embodiment, the first end of transformer module 50 and the second end of transformer module 50 are respectively as transformer
Two signal output ends of module 50, for harmonic signal coupling to be injected into oscillator module 30, meanwhile, the transformer mould
Two signal output ends of block 50 are also used as the signal output end of injection locking frequency multiplier circuit.The first transistor M1 and second
Transistor M2 is active device, for example, the active device can be N-type metal-oxide-semiconductor, wherein the drain electrode of N-type metal-oxide-semiconductor can be made
For the first end of the first transistor M1 and second transistor M2, the source electrode of N-type metal-oxide-semiconductor can be used as the first transistor M1 and
The second end of two-transistor M2, the grid of N-type metal-oxide-semiconductor can be used as the third end of the first transistor M1 and second transistor M2.
In one embodiment, shown in Figure 2, the frequency-selecting unit 32 includes: tuning voltage source 10, first can power transformation
Hold C1 and the second variable capacitance C2；
The first end of the first variable capacitance C1 and the first end of the second variable capacitance C2 are connected to the tuning altogether
The second end of voltage source 10, the second variable capacitance C2 is connect with the first end of the transformer module 50, and described first can
The second end that C1 is held in power transformation is connect with the second end of the transformer module 50.
In one embodiment, the first variable capacitance C1 and the second variable capacitance C2 all can be variable condensers.
In the present embodiment, tuning voltage source 10 can need to be configured according to user, when tuning voltage source 10 exports
Tuning voltage signal intensity when, the frequency of oscillator signal that oscillator module 30 generates becomes according to the frequency of fundamental signal
Change.It is 1.2V for example, with reference to the voltage for shown in Fig. 4, injecting level power supply, the voltage of oscillator supply is 0.6V, and harmonic wave occurs single
The gate bias voltage of active device in member 41 is 0.2V, the gate bias voltage of active device in signal isolation unit 42
For 0.8V, the Injection Current of fundamental signal is 8.2mA.When voltage Vc when tuning voltage source 10 changes to 1.2V from 0, oscillation letter
Number the frequency of fundamental signal of frequency following input change, referring to fig. 4 in simulation result it is found that at this point, injection lock
The frequency lock-in range for determining the fundamental signal of frequency multiplier circuit injection is 26.7~29.7GHz, and the frequency range of oscillator signal is 80
~89GHz, wherein abscissa is fundamental signal frequency, and ordinate is oscillation signal frequency.
In one embodiment, shown in Figure 2, the harmonics generation unit 41 includes third transistor M3 and the 4th
Transistor M4；
The first end of the third transistor M3 is connect with the first input end of the signal isolation unit 42, and the described 4th
The first end of transistor M4 is connect with the second input terminal of the signal isolation unit 42, the second end of the third transistor M3
Ground connection, the second end ground connection of the 4th transistor M4；
The third end of the third transistor M3 is connect with the fundamental signal source 20, for receiving the fundamental signal source
The positive differential signal of 20 outputs；
The third end of the 4th transistor M4 is connect with the fundamental signal source 20, for receiving the fundamental signal source
The cathode differential signal of 20 outputs.
In one embodiment, third transistor M3 and the 4th transistor M4 is active device, for example, the active device
It can be N-type metal-oxide-semiconductor, wherein the drain electrode of N-type metal-oxide-semiconductor can be used as the first end of third transistor M3 and the 4th transistor M4,
The source electrode of N-type metal-oxide-semiconductor can be used as the second end of third transistor M3 and the 4th transistor M4, and the grid of N-type metal-oxide-semiconductor can be with
Third end as third transistor M3 and the 4th transistor M4.
In one embodiment, shown in Figure 2, the signal isolation unit 42 includes the 5th transistor M5 and the 6th
Transistor M6；
The first end of the 5th transistor M5 is connect with the 4th end of the transformer module 50, the 6th transistor
The first end of M6 is connect with the third end of the transformer module 50, the second end of the 5th transistor M5 and the harmonic wave
First signal end of generating unit 41 connects, and the of the second end of the 6th transistor M6 and the harmonics generation unit 41
The connection of binary signal end, the third end of the 5th transistor M5 and the third end of the 6th transistor M6 are hanging.
In the present embodiment, the 5th transistor is set by being arranged between transformer module 50 and harmonics generation unit 41
M5 and the 6th transistor M6, can be by increasing the isolation between transformer module 50 and harmonics generation unit 41, to change
It is apt to since the switch working state of third transistor M3 and the 4th transistor M4 are to the shadow of the resonant tank in oscillator module 30
It rings.
In the present embodiment, third transistor M3 and the 4th transistor M4 constitutes cross-coupled pair pipe, generates negative resistance effect,
For supplementing the loss in the resonant tank in oscillator module 30, wherein third transistor M3, the 4th transistor M4, the 5th
Transistor M5 and the 6th transistor M6 constitutes cascode stage, nonlinear effect is provided, thus in the fundamental signal
The harmonic signal of default frequency range amplifies extraction process.
In one embodiment, the 5th transistor M5 and the 6th transistor M6 is active device, for example, the active device
It can be N-type metal-oxide-semiconductor, wherein the drain electrode of N-type metal-oxide-semiconductor can be used as the first end of the 5th transistor M5 and the 6th transistor M6,
The source electrode of N-type metal-oxide-semiconductor can be used as the second end of the 5th transistor M5 and the 6th transistor M6, and the grid of N-type metal-oxide-semiconductor can be with
Third end as the 5th transistor M5 and the 6th transistor M6.
The embodiment of the present application also provides a kind of injection locked frequency multipliers, comprising:
Fundamental signal source port；
Tuning voltage source port；And
Injection as described in any one of the above embodiments locks frequency multiplier circuit, the injection lock frequency multiplier circuit respectively with the fundamental wave
Signal source port is connected with the tuning voltage source port.
In a kind of injection locking frequency multiplier circuit and injection locked frequency multiplier that the embodiment of the present application proposes, occurred by harmonic wave
Device module 40 generates nonlinear effect, the fundamental signal is converted to corresponding harmonic signal signal, and pass through transformer
Harmonic energy in the multiple harmonic signal is injected into the oscillator module 30 by module 50,30 pairs of institutes of oscillator module
It states multiple harmonic signal and carries out frequency-selecting processing, within the preset frequency range by the Frequency Locking of the oscillator signal, reach
Using the technical effect of the lower higher oscillator signal of fundamental signal output frequency of frequency, and realize the output of oscillator signal
The adjustable purpose of frequency.
The foregoing is merely the preferred embodiments of the application, not to limit the application, all essences in the application
Made any modifications, equivalent replacements, and improvements etc., should be included within the scope of protection of this application within mind and principle.
Claims (10)
1. a kind of injection locks frequency multiplier circuit, it is connect with tuning voltage source and fundamental signal source, which is characterized in that the injection lock
Determining frequency multiplier circuit includes:
It is connect with the tuning voltage source, for generating the oscillator module of oscillator signal；
It is connect with the fundamental signal source, generates multiple harmonic letter for providing nonlinear effect, and according to the fundamental signal
Number harmonic oscillator module；
It is connect respectively with the harmonic oscillator module and the oscillator module, for receiving the multiple harmonic signal, and
Harmonic energy in the multiple harmonic signal is injected into the transformer module of the oscillator module；
Wherein, the oscillator module is also used to carry out frequency-selecting processing to the multiple harmonic signal, so that the oscillation be believed
Number Frequency Locking within the preset frequency range.
2. injection locking frequency multiplier circuit as described in claim 1, which is characterized in that the oscillator module includes:
For using cross-linked transistor to generating negative resistance effect, with compensate the oscillator module energy loss it is negative
Inhibition effect generates unit；With
Unit is generated with the negative resistance effect and the transformer module is connect, and is used for according to the harmonic energy to the oscillation
Signal carries out frequency-selecting processing, and the frequency-selecting unit by the Frequency Locking of the oscillator signal within the preset frequency range.
3. injection locking frequency multiplier circuit as described in claim 1, which is characterized in that the harmonic wave occurs module and includes:
It is connect with the fundamental signal source, generates multiple harmonic for receiving the fundamental signal, and according to the fundamental signal
The harmonics generation unit of signal；
It connect with the harmonics generation unit, is carried out for receiving the multiple harmonic signal, and to the multiple harmonic signal
The signal isolation unit of signal isolation.
4. injection locking frequency multiplier circuit as described in claim 1, which is characterized in that the transformer module and injection level power supply
It is connected with oscillator supply；
The transformer module includes:
The primary coil being connect with the injection level power supply and the harmonic oscillator module；
Secondary coil for being connect with the oscillator supply and the oscillator module；
Wherein, the primary coil intercouples with the secondary coil, by the harmonic energy in the multiple harmonic signal
Coupling is injected into the oscillator module.
5. injection locking frequency multiplier circuit as claimed in claim 4, which is characterized in that the primary coil include the first inductance and
Second inductance, first inductance are connected with second inductance, the first end of first inductance and second inductance
First end is connected to the injection level power supply, the first signal of the second end of first inductance and the harmonic oscillator module altogether
Output end connection, the second end of second inductance are connect with the second signal output end of the harmonic oscillator module；
The secondary coil includes third inductance and the 4th inductance, and the third inductance is connected with the 4th inductance, and described
The first end of three inductance and the first end of the 4th inductance are connected to the oscillator supply, the second end of the third inductance altogether
It is connect with the first signal end of the oscillator module, the second end of the 4th inductance and the second letter of the oscillator module
Number end connection.
6. injection locking frequency multiplier circuit as claimed in claim 2, which is characterized in that it includes that the negative resistance effect, which generates unit,
One transistor and second transistor；
The third end of the first transistor and the first end of the second transistor are connected to the first of the transformer module altogether
End, the third end of the second transistor and the first end of the first transistor are connected to the second of the transformer module altogether
The second end of end, the second end of the first transistor and the second transistor is connected to ground altogether.
7. injection locking frequency multiplier circuit as claimed in claim 6, which is characterized in that the frequency-selecting unit includes: tuning voltage
Source, the first variable capacitance and the second variable capacitance；
The first end of first variable capacitance and the first end of second variable capacitance are connected to the tuning voltage source, institute altogether
The second end for stating the second variable capacitance is connect with the first end of the transformer module, the second end of first variable capacitance with
The second end of the transformer module connects.
8. injection locking frequency multiplier circuit as claimed in claim 3, which is characterized in that the harmonics generation unit includes third crystalline substance
Body pipe and the 4th transistor；
The first end of the third transistor is connect with the first input end of the signal isolation unit, the 4th transistor
First end is connect with the second input terminal of the signal isolation unit, the second end ground connection of the third transistor, and the described 4th
The second end of transistor is grounded；
The third end of the third transistor is connect with the fundamental signal source, for receiving the fundamental signal source output just
Very poor sub-signal；
The third end of 4th transistor is connect with the fundamental signal source, for receiving the negative of the fundamental signal source output
Very poor sub-signal.
9. injection locking frequency multiplier circuit as claimed in claim 3, which is characterized in that the signal isolation unit includes the 5th brilliant
Body pipe and the 6th transistor；
The first end of 5th transistor is connect with the 4th end of the transformer module, the first end of the 6th transistor
It is connect with the third end of the transformer module, the second end of the 5th transistor and the first letter of the harmonics generation unit
Number end connection, the second end of the 6th transistor connect with the second signal end of the harmonics generation unit, the 5th crystalline substance
The third end of body pipe and the third end of the 6th transistor are hanging.
10. a kind of injection locked frequency multiplier characterized by comprising
Fundamental signal source port；
Tuning voltage source port；And
If the described in any item injections of claim 1-9 lock frequency multiplier circuits, the injection lock frequency multiplier circuit respectively with it is described
Fundamental signal source port is connected with the tuning voltage source port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910470250.4A CN110460309A (en) | 2019-05-31 | 2019-05-31 | A kind of injection locking frequency multiplier circuit and injection locked frequency multiplier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20210128877A (en) * | 2020-04-17 | 2021-10-27 | 인하대학교 산학협력단 | An low-power high-speed ILFM for advanced clocking applications |
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| CN102355258A (en) * | 2011-08-03 | 2012-02-15 | 复旦大学 | Low-phase noise quadrature voltage-controlled oscillator based on injection locked frequency multiplier |
| CN107093984A (en) * | 2017-04-20 | 2017-08-25 | 中国电子技术标准化研究院 | One kind injection locking frequency tripler |
| CN109510597A (en) * | 2018-12-19 | 2019-03-22 | 成都瑞迪威科技有限公司 | A kind of wideband enhanced injection locking quadrupler |
| CN109617530A (en) * | 2018-11-26 | 2019-04-12 | 上海奥令科电子科技有限公司 | A kind of push-push note locking-type frequency multiplier circuit |
| CN209805771U (en) * | 2019-05-31 | 2019-12-17 | 华讯方舟科技有限公司 | Injection locking frequency multiplier circuit and injection locking frequency multiplier |
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| CN102355258A (en) * | 2011-08-03 | 2012-02-15 | 复旦大学 | Low-phase noise quadrature voltage-controlled oscillator based on injection locked frequency multiplier |
| CN107093984A (en) * | 2017-04-20 | 2017-08-25 | 中国电子技术标准化研究院 | One kind injection locking frequency tripler |
| CN109617530A (en) * | 2018-11-26 | 2019-04-12 | 上海奥令科电子科技有限公司 | A kind of push-push note locking-type frequency multiplier circuit |
| CN109510597A (en) * | 2018-12-19 | 2019-03-22 | 成都瑞迪威科技有限公司 | A kind of wideband enhanced injection locking quadrupler |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20210128877A (en) * | 2020-04-17 | 2021-10-27 | 인하대학교 산학협력단 | An low-power high-speed ILFM for advanced clocking applications |
| KR102421174B1 (en) * | 2020-04-17 | 2022-07-15 | 인하대학교 산학협력단 | An low-power high-speed ILFM for advanced clocking applications |
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