CN115549591A - Voltage controlled oscillator based on carbon nano tube field effect transistor - Google Patents
Voltage controlled oscillator based on carbon nano tube field effect transistor Download PDFInfo
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- CN115549591A CN115549591A CN202211285072.6A CN202211285072A CN115549591A CN 115549591 A CN115549591 A CN 115549591A CN 202211285072 A CN202211285072 A CN 202211285072A CN 115549591 A CN115549591 A CN 115549591A
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- controlled oscillator
- pmos transistor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1246—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance
- H03B5/1253—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising transistors used to provide a variable capacitance the transistors being field-effect transistors
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- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
The invention relates to a voltage-controlled oscillator based on a carbon nano tube field effect transistor, belonging to the technical field of oscillators, and the voltage-controlled oscillator comprises: the delay circuit comprises a delay unit group comprising n delay units and a variable capacitor unit group comprising n variable capacitor units, wherein each delay unit of the delay unit group forms a feedback loop, the output end of each unit of the delay unit group is respectively connected to the output end of a control voltage Vctrl through each unit of the corresponding variable capacitor unit group, and the power supply end of each unit of the delay unit group is respectively connected to a VDD end; the relevant devices in each unit of the delay unit group and each unit of the corresponding variable capacitor unit group share metal electrodes. The frequency modulation range of the voltage-controlled oscillator can be enlarged, the frequency modulation problem caused by the limitation of the control voltage range of the traditional voltage-controlled oscillator is solved, meanwhile, the voltage-controlled oscillator can have smaller parasitic delay, the performance of a device is not lost, and the wiring parasitic redundancy problem of the traditional voltage-controlled oscillator is solved.
Description
Technical Field
The invention relates to the technical field of oscillators, in particular to a voltage-controlled oscillator based on a carbon nano tube field effect transistor.
Background
A voltage controlled oscillator is an essential element for constructing a wireless communication system, and generally, the frequency range of the voltage controlled oscillator is controlled by converting a control voltage into a current, and a typical implementation is to use a current source as a voltage-to-current converter, which enables voltage-to-current conversion even at a very low supply voltage, and has a disadvantage that the input voltage range of a delay unit thereof is limited by the threshold voltage of a transistor thereof.
When the Barkhausen criterion is met, an output signal of a certain unit passes through the whole loop and returns to the input of the unit, a periodic oscillation signal is generated by signal inversion, the voltage-controlled oscillator has the important advantages of being small in wide tuning range and area, parasitic delay caused by a circuit connecting line inside the voltage-controlled oscillator is described by a parasitic resistor R and a parasitic capacitor C, the smaller the parasitic delay is, the lower the power consumption of the voltage-controlled oscillator is, the better the frequency tuning is, due to the limitation of the traditional semiconductor process preparation, the connection between a load capacitor and a delay unit of an existing CMOS transistor is realized by a subsequent metal interconnection process, the wiring is longer, a lot of parasitic delay is brought, the high-performance voltage-controlled oscillator is realized, the parasitic limit caused by the interconnection between the conventional load capacitor and the delay unit is needed to be broken through, and the existing ways of reducing the interconnection parasitic delay are mainly two: firstly, through adopting the metal interconnect of lower resistivity and higher electron mobility, secondly reduce the volume and the size of interconnect, but these two kinds of modes are starting from the back end of the technology, can't really realize removing to the parasitic delay.
Disclosure of Invention
The invention aims to provide a voltage-controlled oscillator based on a carbon nanotube field effect transistor, which aims to solve the defects in the prior art, and the technical problem to be solved by the invention is realized by the following technical scheme.
The invention provides a voltage-controlled oscillator based on a carbon nano tube field effect transistor, which is composed of a delay unit D 1 ，D 2 ,……D n Composed delay unit group and variable capacitor unit T 1 ，T 2 ,……T n N =2i +1, i is a positive integer greater than zero;
wherein the delay unit D 1 ，D 2 ,……D n The delay unit D is an active load composed of carbon nanotube field effect transistors and is respectively provided with an input end, an output end and a power supply end 1 ，D 2 ,……D n The input end and the output end of the delay unit D are connected in series to form a ring circuit 1 ，D 2 ,……D n The power supply terminal of the power supply is connected to a VDD terminal;
the varactor unit T 1 ，T 2 ,……T n-1 And a control voltage V ctrl The input end is electrically connected, and the other end is connected with the delay unit D 2 ,……D n The input ends of the two-way valve are electrically connected; varactor unit T n And a control voltage V ctrl The input end is electrically connected, and the other end is connected with the delay unit D 1 Is electrically connected to the output terminal of the varactor unit T n-1 As the output terminal V of said voltage controlled oscillator out 。
In the above scheme, the delay unit D 1 ，D 2 ,……D n And the varactor unit T 1 ，T 2 ,……T n A common metal electrode.
In the above scheme, the delay unit D 1 ，D 2 ,……D n The PMOS transistor comprises a first carbon-based PMOS transistor M1 and a second carbon-based PMOS transistor M2.
In the above scheme, the varactor unit T 1 ，T 2 ,……T n A third carbon-based PMOS transistor M3.
In the above scheme, the gate of the first carbon-based PMOS transistor M1 is connected to the source of the first carbon-based PMOS transistor M1, and serves as the output end of the delay unit.
In the above scheme, the drain of the first carbon-based PMOS transistor M1 is grounded.
In the above scheme, the gate of the second carbon-based PMOS transistor M2 serves as the input end of the delay unit.
In the above scheme, the source of the second carbon-based PMOS transistor M2 is connected to the VDD terminal, and the drain of the second carbon-based PMOS transistor M2 is connected to the source of the first carbon-based PMOS transistor M1.
In the above solution, the gate of the third carbon-based PMOS transistor M3 is connected to the control voltage V ctrl And the source electrode of the third carbon-based PMOS tube M3 is connected with the drain electrode of the third carbon-based PMOS tube M3 and is connected to the output end of the delay unit corresponding to the varactor unit.
In the above scheme, the source of the third carbon-based PMOS transistor M3, the drain of the third carbon-based PMOS transistor M3, the source of the first carbon-based PMOS transistor M1, and the gate of the first carbon-based PMOS transistor M1 share a metal electrode.
The embodiment of the invention has the following advantages:
in the voltage-controlled oscillator based on the carbon nanotube field effect transistor provided by the embodiment of the invention, two ends of each unit of the varactor unit group in the voltage-controlled oscillator are respectively connected to the output end of a control voltage Vctrl and the output end of each unit of the delay unit group in the corresponding voltage-controlled oscillator, so as to control the capacitance value of the transmission time-varying capacitor unit to be proportional to the difference between the control voltage and the average output voltage of the corresponding delay unit, so that a large-range control voltage can be provided even under a very small power supply voltage, thereby enlarging the frequency modulation range, overcoming the frequency modulation problem caused by the limitation of the control voltage range of the traditional voltage-controlled oscillator, and simultaneously, by enabling the related devices in each unit of the delay unit group and each unit of the corresponding varactor unit group to share a metal electrode, miniaturizing and integrating the varactor unit and the delay unit on the device level, enabling the voltage-controlled oscillator to have smaller parasitic delay, simultaneously not losing the performance of the devices, and overcoming the connection wire parasitic redundancy problem of the traditional voltage-controlled oscillator.
Drawings
Fig. 1 is a schematic composition diagram of an embodiment of a voltage-controlled oscillator based on a carbon nanotube field effect transistor according to the present invention.
Fig. 2 is a circuit diagram of the delay unit of the present invention.
Fig. 3 is a circuit diagram of a varactor cell of the present invention.
Fig. 4 is a circuit diagram of a delay unit and a varactor unit according to the present invention.
Fig. 5 is a schematic diagram of the structures of the delay unit and the varactor unit of the present invention.
Fig. 6 is a schematic structural diagram of a metal electrode shared by related devices and a varactor unit in a delay unit according to the present invention.
Fig. 7 is a circuit diagram of a voltage controlled oscillator based on a carbon nanotube field effect transistor in an embodiment of the invention.
Detailed Description
It should be noted that, in the present application, the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
As shown in fig. 1, the present invention provides a voltage-controlled oscillator based on a carbon nanotube field effect transistor, where the voltage-controlled oscillator includes: the voltage-controlled oscillator is composed of a delay unit D 1 ，D 2 ,……D n Composed delay unit group and variable capacitor unit T 1 ，T 2 ,……T n N =2i +1, i is a positive integer greater than zero, i.e. n is an odd natural number greater than 1;
wherein the delay unit D 1 ，D 2 ,……D n The delay unit D is an active load composed of carbon nanotube field effect transistors and is respectively provided with an input end, an output end and a power supply end 1 ，D 2 ,……D n The input end and the output end of the delay unit D are connected in series to form a ring circuit 1 ，D 2 ,……D n The power supply terminal of the power supply is connected to a VDD terminal;
the varactor unit T 1 ，T 2 ,……T n-1 And a control voltage V ctrl The input end is electrically connected, and the other end is connected with the delay unit D 2 ,……D n The input ends of the two-way valve are electrically connected; varactor unit T n And a control voltage V ctrl The input end is electrically connected, and the other end is connected with the delay unit D 1 Is electrically connected to the output terminal of the varactor unit T n-1 As the output terminal V of said voltage controlled oscillator out 。
In this embodiment, since the delay unit D 1 ，D 2 ,……D n Respectively pass through corresponding varactor units T 1 ，T 2 ,……T n Connected to the output terminal of the control voltage Vctrl, and can be used for regulating the varactor unit T 1 ，T 2 ,……T n Provides a wide range of control voltages.
As shown in fig. 2, the delay unit includes a first carbon-based PMOS transistor M1 and a second carbon-based PMOS transistor M2, a gate of the first carbon-based PMOS transistor M1 is connected to a source of the first carbon-based PMOS transistor M1 and serves as an output end of the delay unit, a drain of the first carbon-based PMOS transistor M1 is grounded, a gate of the second carbon-based PMOS transistor M2 serves as an input end of the delay unit, a source of the second carbon-based PMOS transistor M2 is connected to a VDD terminal, and a drain of the second carbon-based PMOS transistor M2 is connected to the source of the first carbon-based PMOS transistor M1.
In this embodiment, the first carbon-based PMOS transistor M1 having a negative threshold voltage is not connected to an active load in a conventional gate-drain short circuit manner, but is connected to a two-port current-limiting source load in a gate-source short circuit manner, so that a stable current can be provided, and an overcurrent protection effect can be achieved.
In this embodiment, the connection structure of the first carbon-based PMOS transistor M1 and the second carbon-based PMOS transistor M2 in the delay unit can make the gain of the delay unit insensitive to the variation of the input and output voltages thereof, so as to maintain the circuit with better linearity.
As shown in fig. 3 and 4, the varactor unit employs a third carbon-based PMOS transistor M3, a gate of the third carbon-based PMOS transistor M3 is connected to the input end of the control voltage Vctrl, and a source of the third carbon-based PMOS transistor M3 is connected to a drain of the third carbon-based PMOS transistor M3 and connected to an output end of the delay unit corresponding to the varactor unit.
In this embodiment, two ends of the third carbon-based PMOS transistor M3 are respectively connected to the output terminal of the control voltage Vctrl and the output terminal of the delay unit corresponding to the varactor unit, so as to control the capacitance of the third carbon-based PMOS transistor M3 to be proportional to the difference between the control voltage and the average output voltage of the corresponding delay unit during transmission, so that a large-range control voltage can be provided even under a small supply voltage, thereby increasing the frequency modulation range.
In this embodiment, the varactor unit is connected to the output end of each delay unit, the capacitance change is realized by adjusting voltage, when the control voltage is small, the capacitance of the varactor unit is small, and the generated transmission delay is also small, conversely, when the control voltage is large, the capacitance of the varactor unit is large, so that the transmission delay is increased, in order to obtain a voltage swing, the control voltage is selected within a value range as large as possible under the condition that the conduction of a second carbon-based PMOS transistor M2 in the delay unit is ensured to reduce the source-drain voltage of the second carbon-based PMOS transistor M2 to reduce the signal loss, and the current of the second carbon-based PMOS transistor M2 can be reduced to reduce the power consumption.
As shown in fig. 5, fig. 5-1 is a schematic structural diagram of a carbon-based PMOS transistor, fig. 5-2 is a schematic structural diagram of a third carbon-based PMOS transistor M3, fig. 5-3 is a schematic structural diagram of a first carbon-based PMOS transistor M1 in a delay unit, and a source of the third carbon-based PMOS transistor M3 and a drain of the third carbon-based PMOS transistor M3 share a metal electrode; the source electrode of the first carbon-based PMOS transistor M1 and the gate electrode of the first carbon-based PMOS transistor M1 share a metal electrode.
As shown in fig. 6, the delay unit D 1 ，D 2 ,……D n Middle first carbon-based PMOS (P-channel metal oxide semiconductor) tube M1 and corresponding varactor unit T 1 ，T 2 ,……T n A common metal electrode, specifically, a source electrode of the third carbon-based PMOS transistor M3, a drain electrode of the third carbon-based PMOS transistor M3, a source electrode of the first carbon-based PMOS transistor M1, and a gate electrode of the first carbon-based PMOS transistor M1 share the metal electrode.
As shown in fig. 7, in an embodiment of the present invention, a voltage-controlled oscillator including 5 delay units and 5 varactor units is provided, where each delay unit includes a first carbon-based PMOS transistor M1 and a second carbon-based PMOS transistor M2, a gate of the first carbon-based PMOS transistor M1 is connected to a source of the first carbon-based PMOS transistor M1 and serves as an output end of the delay unit, a drain of the first carbon-based PMOS transistor M1 is grounded, a gate of the second carbon-based PMOS transistor M2 serves as an input end of the delay unit, a source of the second carbon-based PMOS transistor M2 is connected to a VDD, and a drain of the second carbon-based PMOS transistor M2 is connected to the source of the first carbon-based PMOS transistor M1; a third carbon-based PMOS tube M3 is adopted as the varactor unit, the grid electrode of the third carbon-based PMOS tube M3 is connected to the input end of the control voltage Vctrl, and the source electrode of the third carbon-based PMOS tube M3 is connected with the drain electrode of the third carbon-based PMOS tube M3 and is connected to the output end of the delay unit corresponding to the varactor unit; in addition, the input end of the first delay unit and the output end of the fifth delay unit are connected to the output end of the voltage-controlled oscillator, the input ends of the second delay unit to the fourth delay unit are respectively connected to the output end of the corresponding previous delay unit, and the power supply ends of the 5 delay units are respectively connected to the VDD end.
It should be noted that the above detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular is intended to include the plural unless the context clearly indicates otherwise. Furthermore, it will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in other sequences than described of illustrated herein.
Furthermore, the terms "comprising" and "having," as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements explicitly listed, but may include other steps or elements not explicitly listed or inherent to such process, method, article, or apparatus.
For ease of description, spatially relative terms such as "over 8230 \ 8230;,"' over 8230;, \8230; upper surface "," above ", etc. may be used herein to describe the spatial relationship of one device or feature to another device or feature as shown in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if a device in the figures is turned over, devices described as "above" or "on" other devices or configurations would then be oriented "below" or "under" the other devices or configurations. Thus, the exemplary terms "at 8230; \8230; above" may include both orientations "at 8230; \8230; above" and "at 8230; \8230; below". The device may also be oriented in other different ways, such as by rotating it 90 degrees or at other orientations, and the spatially relative descriptors used herein interpreted accordingly.
In the foregoing detailed description, reference is made to the accompanying drawings, which form a part hereof. In the drawings, like numerals typically identify like components, unless context dictates otherwise. The illustrated embodiments described in the detailed description, drawings, and claims are not meant to be limiting. Other embodiments may be utilized, and other changes may be made, without departing from the spirit or scope of the subject matter presented here.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A voltage-controlled oscillator based on a carbon nanotube field effect transistor is characterized in that the voltage-controlled oscillator is provided with a delay unit D 1 ，D 2 ,……D n Composed delay unit group and variable capacitor unit T 1 ，T 2 ,……T n N =2i +1, i is a positive integer greater than zero, wherein,
the delay unit D 1 ，D 2 ,……D n The delay unit D is an active load composed of carbon nanotube field effect transistors and is respectively provided with an input end, an output end and a power supply end 1 ，D 2 ,……D n The input end and the output end of the delay unit D are connected in series to form a ring circuit 1 ，D 2 ,……D n The power supply terminal of the power supply is connected to a VDD terminal;
the varactor unit T 1 ，T 2 ,……T n-1 And a control voltage V ctrl The input end is electrically connected, and the other end is connected with the delay unit D 2 ,……D n The input ends of the two-way valve are electrically connected; varactor unit T n And a control voltage V ctrl The input end is electrically connected, and the other end is connected with the delay unit D 1 Is electrically connected to the output terminal of the varactor unit T n-1 As the output terminal V of said voltage controlled oscillator out 。
2. The carbon nanotube field effect transistor-based voltage controlled oscillator of claim 1, wherein the delay unit D 1 ，D 2 ,……D n And the varactor unit T 1 ，T 2 ,……T n A common metal electrode.
3. The carbon nanotube field effect transistor-based voltage controlled oscillator of claim 2, wherein the delay cell D 1 ，D 2 ,……D n The PMOS transistor comprises a first carbon-based PMOS transistor M1 and a second carbon-based PMOS transistor M2.
4. The carbon nanotube field effect transistor-based voltage controlled oscillator of claim 3, wherein the varactor cell T is 1 ，T 2 ,……T n A third carbon-based PMOS transistor M3.
5. The carbon nanotube field effect transistor-based voltage-controlled oscillator according to claim 3, wherein the gate of the first carbon-based PMOS transistor M1 is connected to the source of the first carbon-based PMOS transistor M1 and serves as the output of the delay unit.
6. The carbon nanotube field effect transistor-based voltage controlled oscillator according to claim 5, wherein a drain of the first carbon-based PMOS transistor M1 is grounded.
7. The carbon nanotube field effect transistor-based voltage controlled oscillator according to claim 3, wherein the gate of the second carbon-based PMOS transistor M2 serves as an input of the delay unit.
8. The carbon nanotube field effect transistor-based voltage controlled oscillator according to claim 7, wherein a source of the second carbon-based PMOS transistor M2 is connected to a VDD terminal, and a drain of the second carbon-based PMOS transistor M2 is connected to a source of the first carbon-based PMOS transistor M1.
9. The carbon nanotube field effect transistor-based voltage-controlled oscillator according to claim 4, wherein the gate of the third carbon-based PMOS transistor M3 is connected to the control voltage V ctrl And the source electrode of the third carbon-based PMOS tube M3 is connected with the drain electrode of the third carbon-based PMOS tube M3 and is connected to the output end of the delay unit corresponding to the varactor unit.
10. The carbon nanotube field effect transistor-based voltage controlled oscillator of claim 4, wherein the source of the third carbon-based PMOS transistor M3, the drain of the third carbon-based PMOS transistor M3, the source of the first carbon-based PMOS transistor M1, and the gate of the first carbon-based PMOS transistor M1 share a metal electrode.
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| CN116366010A (en) * | 2023-03-09 | 2023-06-30 | 苏州纳芯微电子股份有限公司 | Operational amplifier, operational amplifying circuit, chip and electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116366010A (en) * | 2023-03-09 | 2023-06-30 | 苏州纳芯微电子股份有限公司 | Operational amplifier, operational amplifying circuit, chip and electronic device |
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