CN106206881A - A kind of preparation method of vertical structure LED blue light extension - Google Patents
A kind of preparation method of vertical structure LED blue light extension Download PDFInfo
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- CN106206881A CN106206881A CN201610794752.9A CN201610794752A CN106206881A CN 106206881 A CN106206881 A CN 106206881A CN 201610794752 A CN201610794752 A CN 201610794752A CN 106206881 A CN106206881 A CN 106206881A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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Abstract
The invention discloses the preparation method of a kind of vertical structure LED blue light extension, respectively with ammonia, high-purity trimethyl indium (TMIn), TMAl, TEGa and high-purity trimethyl gallium (TMGa) as source, respectively using SiH4 and Cp2Mg as n and p-type dopant, with hydrogen or nitrogen as carrier gas, it is passed through reative cell and at 900～1100 DEG C, chemical reaction occurs with ammonia, generate III V compound semiconductors, by certain lattice order deposition on sapphire, silicon chip, silicon carbide plate or quartz glass plate, make described epitaxial structure.Epitaxial material crystal mass (defect concentration) is controlled at zone of reasonableness by process parameter optimizing and adjustment by the present invention, certain impact is all there is in crystal mass on the photoelectric parameter of product, repair layer and substrate technology is used to improve substrate transfer yields, stress between release liners and epitaxial layer that repair layer and substrate technology can be good.
Description
[technical field]
The invention belongs to technical field of semiconductors, be specifically related to the preparation method of a kind of vertical structure LED blue light extension.
[background technology]
The major parameters such as the wavelength of LED product, brightness, forward voltage each depend on epitaxial growth technology, and therefore extension is raw
Length is the core component of LED manufacturing process.Growth technology and equipment are the key points that epitaxial material manufactures, chemical combination
Thing quasiconductor typically uses chemical synthesis process to prepare, and is divided into LPE (liquid deposition), MOCVD according to the difference of deposition technique
(metal organic chemical vapor deposition), HVPE (hydride vapor phase epitaxy) and MBE (molecular beam deposition) etc..The technology maturation of LPE,
The speed of growth very fast but cannot grown quantum trap, super crystal lattice material；Hydride vapor-phase epitaxy, is adapted to III-V nitride and partly leads
Body thin film and the epitaxially grown a kind of new technique of superlattices, growth rate is fast, but lattice quality is poor, and the scope of application is little；MBE work
Skill control ability is good, easily grows up to very thin epitaxial layer, and purity height planarization is good, but the speed of growth causes volume production ability relatively low slowly.
MOCVD technology possesses MBE and has outside most of advantage, and its volume production ability is much higher compared with MBE, considers LED production and all uses
MOCVD growing technology.
Epitaxial growth technology is primarily directed to horizontal structure chip at present, for reducing the forward voltage of product, at P-GaN table
The design of corresponding epitaxial structure has been done in face；Use patterned substrate growth for improving luminous efficiency or use P-GaN surface coarsening skill
Art, but these Technologies are for light emitting diode (LED) chip with vertical structure, do not simply fail to realize its design original intention, even can affect product
The performance that product are final, it is therefore necessary to develop the epitaxial structure of applicable thin-film LED.
[summary of the invention]
The technical problem to be solved is for above-mentioned deficiency of the prior art,.
The present invention is by the following technical solutions:
A kind of preparation method of vertical structure LED blue light extension, respectively with ammonia, high-purity trimethyl indium, TMAl, TEGa,
And high-purity trimethyl gallium is source, respectively with SiH4And Cp2Mg as n and p-type dopant, with hydrogen or nitrogen as carrier gas, is passed through
There are chemical reactions at 900～1100 DEG C in reative cell and ammonia, generates III V compound semiconductors, sapphire, silicon chip,
By certain lattice order deposition on silicon carbide plate or quartz glass plate, make described epitaxial structure.
Further, said method comprising the steps of:
Step 1: at a temperature of 1070～1090 DEG C, pressure be logical N under 150torr2Baking 10～30min, nitridation is blue precious
Stone, SiC or Si substrate；
Step 2: the sapphire after step 1 is nitrogenized, SiC or Si substrate be cooled to 515～535 DEG C, pressure be
800torr, then at the low stress cushion that Grown thickness is 0.8～1.2 μm, then raises temperature to 1030～1050
DEG C, pressure be that 400torr makes low stress cushion recrystallize, the N-type roughened layer of regrowth 0.8～1 μm；
Step 3: be warming up to 1070～1090 DEG C, pressure be 200torr first grow light Si doping N-type electrode layer, thickness
Being 0.8～1 μm, the N-type GaN layer of regrowth weight Si doping, thickness is 1.8～2.5 μm；
Step 4: growing n-GaN electrons spread layer on the basis of N-type GaN layer, thickness is 80～120nm；
Step 5: the growth temperature 740 of trap～760 DEG C, the growth temperature at base is 820～840 DEG C, pressure is 200torr
The InGaN/GaN superlattices in lower growth 18～23 cycles are as multiple quantum well layer, and MQW layer thickness is 150～200nm；
Step 6: be warming up to 960～980 DEG C, pressure be 150torr grow PAlGaN electronic barrier layer, thickness be 20～
50nm；
Being cooled to 920～940 DEG C, pressure is the p-type GaN layer of 150torr growth Mg doping, and thickness is 100～150nm；
Growing the p-type GaN electrode layer of high Mg doping, thickness is 10～20nm；
Step 7: growth CTL layer, thickness is 10～30nm, be then cooled to 700～730 DEG C carry out annealing 60～
120min, afterwards furnace cooling.
Further, in step 4, regrowth stress release layer on described n-GaN electrons spread layer, thickness is 100nm；Former
Material is TMGa, SiH4 and NH3.
Further, described step 5 particularly as follows:
First 10～15 periodic thicknesses of growth are the In lightly doped InGaN/GaN superlattices of 80～100nm, particularly as follows:
The first GaN-cap layer of growth 30～40nm, the barrierGaN layer of regrowth 5～10nm, the finally InGaN of growth 1.5～2nm
Well layer.
Further, in described step 5,8 periodic thicknesses of regrowth are the heavily doped InGaN/ of In of 100～150nm
GaN, particularly as follows:
The first barrierGaN layer of growth 10～15nm, the InGaN well layer of regrowth 2～5nm, finally growth 30～40nm
GaN cap layer.
Further, in step 6, described p-type GaN layer includes hole diffusion layer and hole injection layer, and described hole is spread
Layer thickness is 30～50nm, and described hole injection layer thickness is 50～100nm.
Further, described PAlGaN electronic blocking layer thickness is 30nm, and described p-type GaN layer thickness is 110nm, described P
Type GaN electrode layers thickness is 10nm, and described hole thickness of diffusion layer is 30nm, and described hole injection layer thickness is 80nm.
Further, in step 2, described low stress buffer layer thickness is 1.2 μm, and described N-type roughened layer thickness is 0.8 μ
m。
Further, in step 3, described N-type electrode layer thickness is 0.8 μm, and described N-type GaN layer thickness is 2 μm.
Further, in step 7, described CTL layer thickness is 10nm.
Compared with prior art, the present invention at least has the advantages that
The preparation method of the present invention a kind of vertical structure LED blue light extension, with ammonia, TMIn, TMAl, TEGa and
TMGa is source, respectively with SiH4And Cp2Mg as n and p-type dopant, with hydrogen or nitrogen as carrier gas, is passed through reative cell and ammonia
There is chemical reaction at 900～1100 DEG C, generate III V compound semiconductors, at sapphire, silicon chip, silicon carbide plate or stone
By certain lattice order deposition on English sheet glass, make epitaxial structure, can be by the flow in accurate gaseous source with logical
Break time controls the component of epitaxial layer, doping content, thickness etc., and growth rate range of accommodation is relatively wide, growth rate faster
Batch can be applicable to grow.
Further, use the design of low stress epitaxial structure, between substrate and epitaxial layer, insert novel transition layer, effectively
Reduce the fit between epitaxial layer and substrate, extension structure optimization is discharged epitaxial layer stress further simultaneously.Angularity is little
In 250km-1.Low-dislocation-density extension, by pre-nucleating method, formed crystal mass relatively before epitaxial growth on substrate
Good nucleus, it is provided that the basis of subsequent epitaxial high-quality growth.Dislocation density is less than 5E108/cm2。
Further, use asymmetric band structure of warbling, load asymmetric band structure of warbling, fall at LED active layer
The low carrier wave function mismatch produced due to polarity effect based on LED quantum well layer so that it is distribution proportion is more uniform.Improve
The internal quantum efficiency of LED component, promotes chip light emitting efficiency.
Further, use high injection current epitaxial structure, between active area and p-type GaN, insert electronic barrier layer, effectively
Solve the problem that Bulk current injection efficiency reduces, between electronic barrier layer and p-type GaN, insert hole diffusion layer, solve big electricity
Flow down hole deficiency problem.Improving vertical chip electric current to inject, maximum current injects and can reach 2A, and pulsed mode electric current is more
High.
Further, hole diffusion layer and hole injection layer use dividing of carrier modulation technology, regulation and control electronics and hole
Cloth state, promotes balanced current distribution, it is ensured that vertical chip photoelectric parameter stable performance under big current work situation.Particular amount
Sub-well structure and hole injection structure design, improve LED current saturation threshold, under high current density, increases brightness with electric current and holds
Continuous increase.
Further, by process parameter optimizing and adjustment, epitaxial material crystal mass (defect concentration) is controlled rationally
Scope, all there is certain impact to the photoelectric parameter of product in crystal mass.
In sum, using low stress buffer layer technique to improve substrate transfer yields, low stress buffer layer technique is permissible
Stress between good release liners and epitaxial layer.
Below by drawings and Examples, technical scheme is described in further detail.
[accompanying drawing explanation]
Fig. 1 is epitaxial structure schematic diagram of the present invention.
[detailed description of the invention]
The preparation method of the present invention a kind of vertical structure LED blue light extension, on epitaxial growth structure designs, need to take into account lining
The end and epitaxial layer Lattice Matching, extension are peeled off and epitaxial quality two aspect factor.Make it adjust for buffer growth, extension lacks
Fall into and control and the requirement of stress regulation control between different materials, more complicated and difficult than horizontal chip.So this project must
Must design and develop out and be suitable for the epitaxial structure that thin-film LED is special, improve and promote thin-film LED Stress Control and
Product photoelectric properties.The most proprietary epitaxial scheme is one of its core process technology, is also the primary of acquisition thin-film LED
One of condition.
Referring to shown in Fig. 1, the preparation method of a kind of vertical structure LED blue light extension, respectively with ammonia, high-purity trimethyl
Indium (TMIn), TMAl, TEGa and high-purity trimethyl gallium (TMGa) are source material, respectively with SiH4And Cp2Mg mixes as n and p-type
Miscellaneous dose, with hydrogen or nitrogen as carrier gas, it is passed through reative cell and at 900～1100 DEG C, chemical reactions occurs with ammonia, generate III V
Compound semiconductor, by certain lattice order deposition on sapphire, silicon chip, silicon carbide plate or quartz glass plate, makes
Described epitaxial structure.
Specifically include following steps:
Step 1: at a temperature of 1070～1090 DEG C, pressure be logical N under 150torr2Baking 10～30min, nitridation is blue precious
Stone, SiC or Si substrate.
Step 2: the sapphire after step 1 is nitrogenized, SiC or Si substrate be cooled to 515～535 DEG C, pressure be
800torr, then at the low stress cushion that Grown thickness is 0.8～1.2nm, then raises temperature to 1030～1050
DEG C, pressure be that 400torr makes low stress cushion recrystallize, the N-type roughened layer of regrowth 0.8～1 μm, raw material be TMGa and
NH3；
The volume flow of described TMGa is 200sccm, described NH3Volume flow be 35000sccm.
Step 3: be warming up to 1070-1090 DEG C, pressure be 200torr first grow light Si doping N-type electrode layer, thickness is
0.8～1 μm, raw material is TMGa, SiH4And NH3；The volume flow of described TMGa is 340sccm, described SiH4Volume flow be
0.5～1sccm, described NH3Volume flow be 35000sccm；
The N-type GaN layer of regrowth weight Si doping, thickness is 1.8～2.5 μm；Raw material is TMGa, SiH4And NH3；Described
The volume flow of TMGa is 340sccm, described SiH4Volume flow be 3～6.5sccm, described NH3Volume flow be
35000sccm。
Step 4: growing n-GaN electrons spread layer on the basis of N-type GaN layer, thickness is 80～120nm, and raw material is
TMGa、SiH4And NH3；The volume flow of described TMGa is 340sccm, described SiH4Volume flow be 0.5～1sccm, described
NH3Volume flow be 35000sccm；
Regrowth stress release layer on described n-GaN electrons spread layer, thickness is 50～100nm；Raw material is TMGa, SiH4
And NH3；The volume flow of described TMGa is 340sccm, described SiH4Volume flow be 0.5～1sccm, described NH3Volume
Flow is 35000sccm.
Step 5: the growth temperature 740 of trap～760 DEG C, the growth temperature at base is 820～840 DEG C, pressure is 200torr
The InGaN/GaN superlattices in lower growth 18～23 cycles are as multiple quantum well layer, and MQW layer thickness is 150～200nm；
First 10～15 periodic thicknesses of growth are the lightly doped InGaN/GaN of In of 80～100nm, particularly as follows:
The GaN-cap layer of growth 30～40nm, raw material is TMGa, SiH4And NH3, the volume flow of described TMGa is
340sccm, described SiH4Volume flow be 0.5～1sccm, described NH3Volume flow be 35000sccm；
The barrierGaN layer of regrowth 5～10nm, raw material is TEGa, SiH4And NH3, the volume flow of described TEGa is
450sccm, described SiH4Volume flow be 0.5～1sccm, described NH3Volume flow be 35000sccm；
The finally InGaN well layer of growth 1.5～2nm, raw material is TEGa, TMIn and NH3；The volume flow of described TEGa is
450sccm, the volume flow of described TMIn is 570sccm, described NH3Volume flow be 35000sccm；
8 periodic thicknesses of regrowth are the heavily doped InGaN/AlGaN of In of 100～150nm, particularly as follows:
The first barrierGaN layer of growth 10～15nm, raw material is TEGa, SiH4And NH3, the volume flow of described TEGa is
450sccm, described SiH4Volume flow be 0.5sccm, described NH3Volume flow be 35000sccm；
The InGaN well layer of regrowth 2～5nm, raw material is TEGa, TMIn and NH3, the volume flow of described TEGa is
450sccm, the volume flow of described TMIn is 570sccm, described NH3Volume flow be 35000sccm；
The finally GaN-cap layer of growth 30～40nm, raw material is TMGa, SiH4And NH3, the volume flow of described TMGa is
340sccm, described SiH4Volume flow be 0.5sccm, described NH3Volume flow be 35000sccm.
Step 6: be warming up to 960～980 DEG C, pressure be 150torr grow PAlGaN electronic barrier layer, thickness be 20～
50nm, raw material is TMGa, TMAl, Cp2Mg and NH3；The volume flow of described TMGa is 38sccm, the volume flow of described TMAl
For 100sccm, described Cp2The volume flow of Mg is 1800sccm, described NH3Volume flow be 32000sccm；
Described p-type GaN also includes that hole diffusion layer and hole injection layer, described hole thickness of diffusion layer are 30～50nm,
Raw material is TMGa, Cp2Mg and NH3, the volume flow of described TMGa is 38sccm, described Cp2The volume flow of Mg is
1600sccm, described NH3Volume flow be 30000sccm；
Described hole injection layer thickness is 50～100nm, and raw material is TMGa, Cp2Mg and NH3, the volume flow of described TMGa
For 38sccm, described Cp2The volume flow of Mg is 1600sccm, described NH3Volume flow be 30000sccm；
Being cooled to 920～940 DEG C, pressure is the p-type GaN layer of 150torr growth Mg doping, and thickness is 100～150nm,
Raw material is TMGa, Cp2Mg and NH3, the volume flow of described TMGa is 38sccm, described Cp2The volume flow of Mg is
1600sccm, described NH3Volume flow be 30000sccm；；
Growing the p-type GaN electrode layer of high Mg doping, thickness is 10～20nm, and raw material is TMGa, Cp2Mg and NH3, described
The volume flow of TMGa is 38sccm, described Cp2The volume flow of Mg is 1600sccm, described NH3Volume flow be
30000sccm。
Step 7: growth CTL layer, thickness is 10～30nm, be then cooled to 700～730 DEG C carry out annealing 60～
120min, afterwards furnace cooling.
Embodiment 1
The preparation method of a kind of vertical structure LED blue light extension, comprises the following steps:
Step 1: at a temperature of 1070 DEG C, pressure be that under 150torr, logical N2 toasts 10min, nitrogenize sapphire, SiC or Si
Substrate；
Step 2: the sapphire after step 1 is nitrogenized, SiC or Si substrate be cooled to 515 DEG C, pressure be 800torr, then
At the low stress cushion that Grown thickness is 0.8 μm, then raise temperature to 1030 DEG C, pressure be that 400torr makes low stress
Cushion recrystallizes, the N-type roughened layer of regrowth 0.8 μm；
Step 3: be warming up to 1070 DEG C, pressure be 200torr first grow light Si doping N-type electrode layer, thickness is 0.8 μ
M, the N-type GaN layer of regrowth weight Si doping, thickness is 1.8 μm；
Step 4: growing n-GaN electrons spread layer on the basis of N-type GaN layer, thickness is 80nm；Described n-GaN electronics
Regrowth stress release layer on diffusion layer, thickness is 100nm；
Step 5: in the growth temperature 740 DEG C of trap, the growth temperature at base is 820 DEG C, pressure is first to grow 10 under 200torr
Individual periodic thickness is the lightly doped InGaN/GaN of In of 80nm, particularly as follows: first grow the GaN-cap layer of 30nm, regrowth 5nm
BarrierGaN layer, finally grow the InGaN well layer of 1.5nm；
8 periodic thicknesses of regrowth are the heavily doped InGaN/GaN of In of 100nm, particularly as follows: first grow 10nm's
BarrierGaN layer, the InGaN well layer of regrowth 2nm, finally grow the GaN cap layer of 30nm；
Step 6: be warming up to 960 DEG C, pressure is that 150torr grows PAlGaN electronic barrier layer, and thickness is 20nm；
Being cooled to 920 DEG C, pressure is the p-type GaN layer of 150torr growth Mg doping, and thickness is 100nm；
Growing the p-type GaN electrode layer of high Mg doping, thickness is 10nm；
Step 7: growth CTL layer, thickness is 10nm, is then cooled to 700 DEG C and carries out anneal 60min, afterwards furnace cooling.
Embodiment 2
The preparation method of a kind of vertical structure LED blue light extension, comprises the following steps:
Step 1: at a temperature of 1080 DEG C, pressure be that under 150torr, logical N2 toasts 20min, nitrogenize sapphire, SiC or Si
Substrate；
Step 2: the sapphire after step 1 is nitrogenized, SiC or Si substrate be cooled to 525 DEG C, pressure be 800torr, then
At the low stress cushion that Grown thickness is 1 μm, then raise temperature to 1040 DEG C, pressure be 400torr make low stress delay
Rush layer to recrystallize, the N-type roughened layer of regrowth 0.9 μm；
Step 3: be warming up to 1080 DEG C, pressure be 200torr first grow light Si doping N-type electrode layer, thickness is 0.8 μ
M, the N-type GaN layer of regrowth weight Si doping, thickness is 2.1 μm；
Step 4: growing n-GaN electrons spread layer on the basis of N-type GaN layer, thickness is 100nm；Described n-GaN electronics
Regrowth stress release layer on diffusion layer, thickness is 100nm；
Step 5: in the growth temperature 750 DEG C of trap, the growth temperature at base is 830 DEG C, pressure is first to grow 13 under 200torr
Individual periodic thickness is the lightly doped InGaN/GaN of In of 90nm, particularly as follows: first grow the GaN-cap layer of 35nm, regrowth 8nm
BarrierGaN layer, finally grow the InGaN well layer of 1.8nm；
8 periodic thicknesses of regrowth are the heavily doped InGaN/GaN of In of 130nm, particularly as follows: first grow 13nm's
BarrierGaN layer, the InGaN well layer of regrowth 3.5nm, finally grow the GaN cap layer of 35nm；
Step 6: be warming up to 970 DEG C, pressure is that 150torr grows PAlGaN electronic barrier layer, and thickness is 35nm；
Being cooled to 930 DEG C, pressure is the p-type GaN layer of 150torr growth Mg doping, and thickness is 130nm；
Growing the p-type GaN electrode layer of high Mg doping, thickness is 15nm；
Step 7: growth CTL layer, thickness is 20nm, is then cooled to 720 DEG C and carries out the 100min that anneals, cold with stove afterwards
But.
Embodiment 3
The preparation method of a kind of vertical structure LED blue light extension, comprises the following steps:
Step 1: at a temperature of 1090 DEG C, pressure be that under 150torr, logical N2 toasts 30min, nitrogenize sapphire, SiC or Si
Substrate；
Step 2: the sapphire after step 1 is nitrogenized, SiC or Si substrate be cooled to 535 DEG C, pressure be 800torr, then
At the low stress cushion that Grown thickness is 1.2 μm, then raise temperature to 1050 DEG C, pressure be that 400torr makes low stress
Cushion recrystallizes, the N-type roughened layer of regrowth 1 μm；
Step 3: be warming up to 1090 DEG C, pressure be 200torr first grow light Si doping N-type electrode layer, thickness is 1 μm,
The N-type GaN layer of regrowth weight Si doping, thickness is 2.5 μm；
Step 4: growing n-GaN electrons spread layer on the basis of N-type GaN layer, thickness is 120nm；Described n-GaN electronics
Regrowth stress release layer on diffusion layer, thickness is 100nm；
Step 5: in the growth temperature 760 DEG C of trap, the growth temperature at base is 840 DEG C, pressure is first to grow 15 under 200torr
Individual periodic thickness is the lightly doped InGaN/GaN of In of 100nm, particularly as follows: first grow the GaN-cap layer of 40nm, regrowth
The barrierGaN layer of 10nm, finally grows the InGaN well layer of 2nm；
8 periodic thicknesses of regrowth are the heavily doped InGaN/GaN of In of 150nm, particularly as follows: first grow 15nm's
BarrierGaN layer, the InGaN well layer of regrowth 5nm, finally grow the GaN cap layer of 40nm；
Step 6: be warming up to 980 DEG C, pressure is that 150torr grows PAlGaN electronic barrier layer, and thickness is 50nm；
Being cooled to 940 DEG C, pressure is the p-type GaN layer of 150torr growth Mg doping, and thickness is 150nm；
Growing the p-type GaN electrode layer of high Mg doping, thickness is 20nm；
Step 7: growth CTL layer, thickness is 30nm, is then cooled to 730 DEG C and carries out the 120min that anneals, cold with stove afterwards
But.
As shown in the table according to vertical structure LED blue light epitaxial structure technical specification prepared by described method:
| Test event | Project agreement index | Measured data | Test condition |
| Wavelength | 450nm-460nm | 450nm-460nm | 10msec@20mA |
| Forward running voltage | / | 2.9-3.2V | 10msec@20mA |
| Wavelength distribution half-breadth | ＜ 3.5nm | ≤2nm | 2mmx2mm is spaced, PL tester |
Vertical structure LED blue light epitaxial surface pattern:
Surface topography is one of epitaxial wafer evaluation index, the quality of reflection epitaxial growth technology control ability.Utilize high power
Optical microscope and atomic force microscope (AFM), can observe epitaxial wafer surface smoothness and atom level arrangement situation thereof, thus
Obtain epitaxial crystal mass growth information.In optical microscope, the smooth no significant defect of epitaxial surface；AFM tests
Picture proves that gallium nitride surface Atomic Arrangement is neat, and atomic steps is clear.
Epitaxial crystal quality is to weigh an important references index of LED grade.High-resolution XRD is utilized to survey
Examination, analyzes rocking curve half-value width in XRD figure and evaluates the crystal mass of epitaxial film.The crystal mass shadow to rocking curve
Ringing the broadening effect showing half-peak breadth, there is corresponding relation in both.
Helical dislocation and the edge dislocation defect concentration of epitaxial structure, new light sources epitaxial wafer is obtained from XRD test result calculations
(002) face half-value width is 293arcsec, and its (102) face half-value width is 312arcsec.The defect concentration of edge dislocation is about
2.82 × 108cm-2, the defect concentration of helical dislocation is about 1.65 × 108cm-2, and powder injection molding is in preferable level.
Vertical structure LED blue light epitaxial material carrier concentration:
N-type GaN foreign atom is Si, and p-type GaN foreign atom is Mg.For meeting the big current work of vertical structure LED, need
N-type GaN electron concentration that will be higher and p-type GaN hole concentration.Foreign atom is mixed the most in GaN single crystal material, it is thus achieved that
Crystal mass is the poorest, eventually results in carrier mobility and reduces.Carry out Hall test, N-type GaN carrier at ambient temperature
Concentration is when 1018cm-3 scope, and carrier mobility is good more than 200cm2/vs.New light sources sample is under equal conditions surveyed
Examination, mobility reaches 372.44cm2/vs, and material property is excellent.
Mg doping p-GaN forms hole difficulty, and hole concentration is low, and mobility is little, causes p-type gallium nitride material current expansion
Property poor, contact resistance is relatively big, the problems such as luminosity, luminous efficiency are low.Use non-uniform doping technology, reduce activation energy, carry
High Mg activation efficiency.Carry out Hall test in room temperature condition vacation, more than hole concentration 1018cm-3, belong to advanced level in the industry.
Vertical structure LED blue light extension wavelength uniformity controls:
Epitaxial wafer emission wavelength directly affects the wavelength yields of epitaxial chip.In preparation process, wavelength uniformity controls
Difficulty is higher, uses Stress Release technology to special construction adjustment growth rate to reach the effect of homoepitaxial, simultaneously to setting
Standby hardware, production technology are controlled, and are effectively increased epitaxial wafer wavelength uniformity.Equal with stove epitaxial wafer medium wavelength about 80%
Difference is within 5nm.
Epitaxial wafer Wavelength distribution is interval between 450nm-460nm, and Wavelength distribution half-breadth is all within 2nm simultaneously
Above content is only the technological thought that the present invention is described, it is impossible to limit protection scope of the present invention with this, every presses
The technological thought proposed according to the present invention, any change done on the basis of technical scheme, each fall within claims of the present invention
Protection domain within.
Claims (10)
1. the preparation method of a vertical structure LED blue light extension, it is characterised in that respectively with ammonia, high-purity trimethyl indium,
TMAl, TEGa and high-purity trimethyl gallium are source material, respectively with SiH4And Cp2Mg is as n and p-type dopant, with hydrogen or nitrogen
Gas is carrier gas, is passed through reative cell and at 900～1100 DEG C, chemical reaction occurs with ammonia, generates III V compound semiconductors,
By certain lattice order deposition on sapphire, silicon chip, silicon carbide plate or quartz glass plate, make described epitaxial structure.
The preparation method of a kind of vertical structure LED blue light extension the most according to claim 1, it is characterised in that described side
Method comprises the following steps:
Step 1: at a temperature of 1070～1090 DEG C, pressure be logical N under 150torr2Baking 10～30min, nitrogenizes sapphire, SiC
Or Si substrate；
Step 2: the sapphire after step 1 is nitrogenized, SiC or Si substrate be cooled to 515～535 DEG C, pressure be 800torr, so
After at the low stress cushion that Grown thickness is 0.8～1.2 μm, then raise temperature to 1030～1050 DEG C, pressure be
400torr makes low stress cushion recrystallize, the N-type roughened layer of regrowth 0.8～1 μm；
Step 3: be warming up to 1070～1090 DEG C, pressure be 200torr first grow light Si doping N-type electrode layer, thickness is 0.8
～1 μm, the N-type GaN layer of regrowth weight Si doping, thickness is 1.8～2.5 μm；
Step 4: growing n-GaN electrons spread layer on the basis of N-type GaN layer, thickness is 80～120nm；
Step 5: the growth temperature 740 of trap～760 DEG C, the growth temperature at base is 820～840 DEG C, pressure is raw under 200torr
The InGaN/GaN superlattices in long 18～23 cycles are as multiple quantum well layer, and MQW layer thickness is 150～200nm；
Step 6: be warming up to 960～980 DEG C, pressure is that 150torr grows PAlGaN electronic barrier layer, and thickness is 20～50nm；
Being cooled to 920～940 DEG C, pressure is the p-type GaN layer of 150torr growth Mg doping, and thickness is 100～150nm；
Growing the p-type GaN electrode layer of high Mg doping, thickness is 10～20nm；
Step 7: growth CTL layer, thickness is 10～30nm, is then cooled to 700～730 DEG C and carries out annealing 60～120min, it
Rear furnace cooling.
The preparation method of a kind of vertical structure LED blue light extension the most according to claim 2, it is characterised in that step 4
In, regrowth stress release layer on described n-GaN electrons spread layer, thickness is 100nm；Raw material is TMGa, SiH4 and NH3.
The preparation method of a kind of vertical structure LED blue light extension the most according to claim 2, it is characterised in that described step
Rapid 5 particularly as follows:
First 10～15 periodic thicknesses of growth are the In lightly doped InGaN/GaN superlattices of 80～100nm, particularly as follows: Mr.
The GaN-cap layer of long 30～40nm, the barrierGaN layer of regrowth 5～10nm, finally the InGaN trap of growth 1.5～2nm
Layer.
The preparation method of a kind of vertical structure LED blue light extension the most according to claim 4, it is characterised in that described step
In rapid 5,8 periodic thicknesses of regrowth are the heavily doped InGaN/GaN of In of 100～150nm, particularly as follows:
The first barrierGaN layer of growth 10～15nm, the InGaN well layer of regrowth 2～5nm, finally growth 30～40nm
GaN cap layer.
The preparation method of a kind of vertical structure LED blue light extension the most according to claim 2, it is characterised in that step 6
In, described p-type GaN layer includes that hole diffusion layer and hole injection layer, described hole thickness of diffusion layer are 30～50nm, described sky
Cave implanted layer thickness is 50～100nm.
The preparation method of a kind of vertical structure LED blue light extension the most according to claim 6, it is characterised in that described
PAlGaN electronic blocking layer thickness is 30nm, and described p-type GaN layer thickness is 110nm, and described p-type GaN electrode layers thickness is
10nm, described hole thickness of diffusion layer is 30nm, and described hole injection layer thickness is 80nm.
The preparation method of a kind of vertical structure LED blue light extension the most according to claim 2, it is characterised in that step 2
In, described low stress buffer layer thickness is 1.2 μm, and described N-type roughened layer thickness is 0.8 μm.
The preparation method of a kind of vertical structure LED blue light extension the most according to claim 2, it is characterised in that step 3
In, described N-type electrode layer thickness is 0.8 μm, and described N-type GaN layer thickness is 2 μm.
The preparation method of a kind of vertical structure LED blue light extension the most according to claim 2, it is characterised in that step 7
In, described CTL layer thickness is 10nm.
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