CN106206876A - 一种发光二极管外延片的制造方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 8
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 38
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- 238000000354 decomposition reaction Methods 0.000 claims abstract description 12
- 125000001477 organic nitrogen group Chemical group 0.000 claims abstract description 12
- 230000000903 blocking effect Effects 0.000 claims abstract description 8
- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 7
- HKOOXMFOFWEVGF-UHFFFAOYSA-N phenylhydrazine Chemical compound NNC1=CC=CC=C1 HKOOXMFOFWEVGF-UHFFFAOYSA-N 0.000 claims description 4
- 229940067157 phenylhydrazine Drugs 0.000 claims description 4
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
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- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
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- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
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- 239000010980 sapphire Substances 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
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- JOTBHEPHROWQDJ-UHFFFAOYSA-N methylgallium Chemical compound [Ga]C JOTBHEPHROWQDJ-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
一种发光二极管外延片的制造方法，涉及紫外（UV）光的LED外延片的生产的技术领域。在外延生长AlN成核层、AlGaN非掺杂层、n型AlGaN电子注入层、n型AlGaN空穴阻挡层、多量子阱有源区和AlGaN电子阻挡层时，通入N源前驱物和III族金属有机化合物，本发明采用低分解温度的有机氮源为N源前驱物，能够在较低V/III比下获得充足的活性N源，避免过多的V族N源前驱物与III族III族金属有机化合物形成预反应，改善晶体生长质量，提高LED内量子效率，以此外延片制成的发光二极管的发光波长可达200～400nm。
Description
技术领域
本发明涉及紫外（UV）光的LED，特别是其外延片的生产的技术领域。
背景技术
近来，已经开发出用于发射具有365nm或更短的波长的深紫外光的LED。紫光器件可以被广泛地应用于空气和水的消毒、表面污染物的去除、诸如生物剂检测器的光传感器、聚合物的UV固化、医学分析设备等。
目前紫光外延生长面临的困难主要包括衬底和材料本身对紫光的吸收以及如何获得较高晶体质量的AlGaN材质。早期材料生长有通过AlN缓冲层、SiN掩膜方式改善晶体质量，降低位错密度，现有技术通过PSS衬底溅射AlN成核、材料生长中插入AlN层等方式改善晶体质量的效果显著。
通常紫光LED具有下述结构：含有Al的GaN基阱层的多量子阱结构介于n型AIGaN层和p型AIGaN层之间，以发射短波长的光。同时，由于AIGaN层通常不与金属欧姆接触，因此采用具有少量Al的GaN作为p型接触层。然而，因为A1原子粘附系数更大，表面吸附原子的迁移率比Ga原子低得多，无法在表面获得足够的能量移动到合适的晶格位置，导致了三维岛状生长，结果造成高A1组分的AlGaN薄膜生长过程产生了不同的成核点，成核点增长成岛后再合并，这样生长的AlGaN薄膜中位错密度、界面缺陷密度非常高。
此外在MOCVD生长AlGaN材料过程中用到的Al源和氨气的预反应非常迅速，也导致A1N和AlGaN层的晶体质量下降。有报道采用较低的V/III比以降低Al源前体与NH3的碰撞几率，减少两者的络合物生成，而NH3具有较高的热稳定性，低温不易分解，通常外延生长需要大量的活性N来稳定材质表面。在低V/III比情况下采用NH3作为N源不利于获得充足的活性N源，不利于获得较高晶体值得AlGaN薄膜。也有报告通过脉冲方式生长高质量的AlN、AlGaN薄膜。
发明内容
本发明目的是通过一种外延生长方法，以解决氮化镓基发光二极管存在的上述Al源前体与NH3发生预反应的问题。
本发明技术方案是：在衬底的同一侧依次外延生长AlN成核层、AlGaN非掺杂层、n型AlGaN电子注入层、n型AlGaN空穴阻挡层、多量子阱有源区、AlGaN电子阻挡层、AlGaN空穴注入层，其特征在于：在外延生长AlN成核层、AlGaN非掺杂层、n型AlGaN电子注入层、n型AlGaN空穴阻挡层、多量子阱有源区和AlGaN电子阻挡层时，通入N源前驱物和III族金属有机化合物，本发明的特征是：所述N源前驱物为低分解温度的有机氮源。
本发明在外延片生长时采用低分解温度的有机氮源作为N的前驱物，能够在较低V/III比下获得充足的活性N源，避免过多的V族N源前驱物与III族III族金属有机化合物形成预反应，改善晶体生长质量，提高LED内量子效率，以此外延片制成的发光二极管的发光波长可达200～400nm。
进一步地，本发明所述低分解温度的有机氮源为偏二甲肼或苯基联胺。
采用偏二甲肼或苯基联胺作为低分解温度的有机氮源，因其分解温度偏低，在温度为400～600℃的条件下即可达到50%以上的分解效率，故可为材料生长提供充足的活性N源，有利于避免氮源未分解前与Al源形成络合物，同时有利于维持材料生长时的薄膜质量，避免晶格缺陷。
所述低分解温度的有机氮源和III族有机金属化合物的混合体积比为10～500∶1。在该比例下，一方面有利于保证N源的充足供应，避免N源与Al源预聚物的形成，同时该范围内通过调节低分解温度的有机氮源的通入量，调节材料的二维平面生长和三维结构生长。当降低有机氮源含量时，有利于借助III族金属原子迁移势垒偏高的特点，促进材料三维结构生长，形成二次成核重构外延层生长。当提高有机氮源的含量时，有利于借助N源在衬底的延伸吸附，减少III族金属原子的迁移势垒，促进材料二维平面生长，改善晶格缺陷，减少位错的产生。三维结构生长与二维平面生长的调控促进晶体质量的提高。
附图说明
图1为本发明实施例制成的一种紫光二极管外延片的结构示意图。
具体实施方式
实施例1：
1、如图1所示，在蓝宝石衬底S1上生长一层厚度为30nm 的AlN低温成核层S2：生长气氛为H2，生长温度500℃，压力为65000Pa，生长N源为偏二甲肼，偏二甲肼流量为5000sccm，TMAl（三甲基铝）流量100sccm。
2、在AlN低温成核层S2上生长厚度约3μm的 AlGaN非掺杂层S3：生长气氛为H2，生长温度1050℃，压力为40000Pa，生长N源为偏二甲肼，偏二甲肼流量为10000sccm， TMAl（三甲基铝）流量30sccm，TMGa（三甲基镓）流量为300sccm。
3、在AlGaN非掺杂层S3上生长一层厚度约为3μm的 n型AlGaN电子注入层S4：生长气氛为H2，生长温度1050℃，压力20000Pa，掺杂浓度为1×1019cm-3，生长N源为偏二甲肼，偏二甲肼流量为10000sccm， TMAl（三甲基铝）流量20sccm，TMGa（三甲基镓）流量为200sccm。
4、在AlGaN电子注入层S4上生长一层厚度约为5nm的n型AlGaN空穴阻挡层S5：生长气氛为H2，生长温度1050℃，压力10000Pa，掺杂浓度为2×1018cm-3，生长N源为偏二甲肼，偏二甲肼流量为5000sccm， TMAl（三甲基铝）流量100sccm，TMGa（三甲基镓）流量为200sccm。
6、在n型AlGaN空穴阻挡层S5上生长8对Al0.1In0.03Ga0.87N/ Al0.3In0.01Ga0.69N多量子阱有源区S6：生长气氛为H2，生长温度均为850℃，压力为30000Pa，每对中的Al0.1In0.03Ga0.87N垒层和 Al0.3In0.01Ga0.69N阱层的厚度分别为4nm和8nm。
垒层和阱层的生长N源均为偏二甲肼，以20000sccm的流量连续通入偏二甲肼。
在生长阱层时，还通入流量为20sccm的TMAl（三甲基铝），流量为400sccm 的TEGa（三甲基镓）和流量为300sccm的TMIn（三甲基铟）。
生长垒层时，还通入流量为60sccm的TMAl（三甲基铝），流量为900sccm 的TEGa（三甲基镓）和流量为100sccm 的TMIn（三甲基铟）。
7、在多量子阱有源区S6上生长6对p型Al0.3Ga0.7N/Al0.5Ga0.5N电子阻挡层S7：每对中的Al0.3Ga0.7N层和Al0.5Ga0.5N层的生长厚度分别为10nm和2nm。
生长气氛为N2，生长温度800℃，生长压力10000Pa，Mg原子掺杂浓度为2×1019cm-3，生长N源为偏二甲肼，以10000sccm的流量连续通入偏二甲肼。在生长Al0.3Ga0.7N时还通入流量为60sccm的Al源，在生长Al0.5Ga0.5N时还通入流量为100sccm的Al源。
8、在p型Al0.3Ga0.7N/Al0.5Ga0.5N电子阻挡层S7上生长厚度为50nm的p型Al0.2Ga0.8N空穴注入层S8：生长温度900℃，压力为20000Pa，生长N源为偏二甲肼，Mg掺杂浓度1×1020cm-3。
实施例2
实施例2与实施例1的区别仅在于：将偏二甲肼更换为苯基联胺。
同样出能在蓝宝石衬底S1上外延形成AlN低温成核层S2、AlGaN非掺杂层S3、n型AlGaN电子注入层S4、n型AlGaN空穴阻挡层S5、Al0.1In0.03Ga0.87N/ Al0.3In0.01Ga0.69N多量子阱有源区S6、p型Al0.3Ga0.7N/Al0.5Ga0.5N电子阻挡层S7、p型Al0.2Ga0.8N空穴注入层S8，产品性能相当与上例产品。
Claims (3)
1.一种发光二极管外延片的制造方法，在衬底的同一侧依次外延生长AlN成核层、AlGaN非掺杂层、n型AlGaN电子注入层、n型AlGaN空穴阻挡层、多量子阱有源区、AlGaN电子阻挡层、AlGaN空穴注入层，其特征在于：在外延生长AlN成核层、AlGaN非掺杂层、n型AlGaN电子注入层、n型AlGaN空穴阻挡层、多量子阱有源区和AlGaN电子阻挡层时，通入N源前驱物和III族金属有机化合物，其特征在于：所述N源前驱物为低分解温度的有机氮源。
2.根据权利要求1所述的发光二极管外延片的制造方法，其特征在于所述低分解温度的有机氮源为偏二甲肼或苯基联胺。
3.根据权利要求2所述的发光二极管外延片的制造方法，其特征在于所述低分解温度的有机氮源和III族金属有机化合物的混合体积比为10～500∶1。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107069433A (zh) * | 2017-06-20 | 2017-08-18 | 中国科学院半导体研究所 | GaN基紫外激光器晶圆、激光器芯片及激光器及其制备方法 |
| CN110473941A (zh) * | 2019-05-24 | 2019-11-19 | 华南师范大学 | 一种AlGaN基紫外LED外延结构 |
| CN116053369A (zh) * | 2023-03-31 | 2023-05-02 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101340058A (zh) * | 2007-07-02 | 2009-01-07 | 三菱电机株式会社 | 氮化物类半导体叠层结构及半导体光元件以及其制造方法 |
| CN102760812A (zh) * | 2011-04-26 | 2012-10-31 | 台湾积体电路制造股份有限公司 | 具有纳米图案化衬底的led的方法和结构 |
| CN104733575A (zh) * | 2013-08-19 | 2015-06-24 | 新世纪光电股份有限公司 | 发光结构及包含该发光结构的半导体发光元件 |
| CN104966768A (zh) * | 2015-05-28 | 2015-10-07 | 东南大学 | 一种具有量子点结构的紫外发光二极管 |
-
2016
- 2016-08-29 CN CN201610739672.3A patent/CN106206876A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101340058A (zh) * | 2007-07-02 | 2009-01-07 | 三菱电机株式会社 | 氮化物类半导体叠层结构及半导体光元件以及其制造方法 |
| CN102760812A (zh) * | 2011-04-26 | 2012-10-31 | 台湾积体电路制造股份有限公司 | 具有纳米图案化衬底的led的方法和结构 |
| CN104733575A (zh) * | 2013-08-19 | 2015-06-24 | 新世纪光电股份有限公司 | 发光结构及包含该发光结构的半导体发光元件 |
| CN104966768A (zh) * | 2015-05-28 | 2015-10-07 | 东南大学 | 一种具有量子点结构的紫外发光二极管 |
Cited By (3)
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| CN107069433A (zh) * | 2017-06-20 | 2017-08-18 | 中国科学院半导体研究所 | GaN基紫外激光器晶圆、激光器芯片及激光器及其制备方法 |
| CN110473941A (zh) * | 2019-05-24 | 2019-11-19 | 华南师范大学 | 一种AlGaN基紫外LED外延结构 |
| CN116053369A (zh) * | 2023-03-31 | 2023-05-02 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法 |
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