CN106206776A - A kind of substrate for infrared spectrum - Google Patents
A kind of substrate for infrared spectrum Download PDFInfo
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- CN106206776A CN106206776A CN201610605777.XA CN201610605777A CN106206776A CN 106206776 A CN106206776 A CN 106206776A CN 201610605777 A CN201610605777 A CN 201610605777A CN 106206776 A CN106206776 A CN 106206776A
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- substrate
- hole
- infrared spectrum
- window layer
- support substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 91
- 238000002329 infrared spectrum Methods 0.000 title claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 35
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 8
- 239000011733 molybdenum Substances 0.000 claims abstract description 8
- 229910052582 BN Inorganic materials 0.000 claims abstract description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 5
- OPBPMGYBSDKJBT-DQHLZUIQSA-N (7s,9r,10r)-9-ethyl-4,6,9,10,11-pentahydroxy-7-[(2r,4s,5s,6s)-5-hydroxy-6-methyl-4-morpholin-4-yloxan-2-yl]oxy-8,10-dihydro-7h-tetracene-5,12-dione Chemical compound N1([C@H]2C[C@@H](O[C@@H](C)[C@H]2O)O[C@H]2C[C@]([C@@H](C3=C(O)C=4C(=O)C5=CC=CC(O)=C5C(=O)C=4C(O)=C32)O)(O)CC)CCOCC1 OPBPMGYBSDKJBT-DQHLZUIQSA-N 0.000 claims abstract description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 8
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000011707 mineral Substances 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 12
- 239000002356 single layer Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000004566 IR spectroscopy Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
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- 238000001514 detection method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
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- 229910052796 boron Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 229910001632 barium fluoride Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
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- 239000011780 sodium chloride Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- -1 AMTIR Chemical compound 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 1
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- 238000002835 absorbance Methods 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010511 deprotection reaction Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052961 molybdenite Inorganic materials 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- PGAPATLGJSQQBU-UHFFFAOYSA-M thallium(i) bromide Chemical compound [Tl]Br PGAPATLGJSQQBU-UHFFFAOYSA-M 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Laminated Bodies (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention provides a kind of substrate for infrared spectrum, the structure of this substrate includes Window layer and supports substrate, and Window layer is positioned on support substrate, selects the monatomic two-dimensional material to 1000 atomic layer level thickness；The horizontal cross-sectional shapes supporting substrate is circle, ellipse, triangle, square, rectangle, pentagon structure, regular hexagon, octagonal, and the physical dimension of described support substrate is 500 μm 5cm, and thickness is 1 μm 5cm；Supporting substrate and be provided with some through-hole structures, through hole is arranged in the form of an array, and the center of via-hole array keeps consistent substantially with the geometric center of substrate, and the spacing between through hole is 1 μm 4cm；The Window layer position that described through hole is corresponding forms unsettled Window layer；Wherein said two-dimensional material is selected from Graphene, molybdenum bisuphide, boron nitride, MX2, black phosphorus.
Description
Technical field
The present invention relates to infrared light detecting technical field, particularly to a kind of substrate for infrared spectrum and preparation side
Method.
Background technology
Infrared spectrum technology is that a kind of direct detection molecular vibrational mode realizes material carrying out feature identification and quantitatively dividing
The technology of analysis and method.This technology has " fingerprint " characteristic of height, it is not necessary to sample labelling, fast response time, and instrument is popularized
The advantages such as rate is the highest, and spectrum picture library is the most complete, determine that molecular composition, conformation and the powerful tools of structure change information and can not
Or the means lacked, it is widely used to environmental monitoring, food safety detection, chemical composition analysis, explosive detection and biological doctor
Treatment etc. involves the interests of the state and the people and the key areas of lifelines of the national economy.
In infrared spectrum analysis, the infrared spectroscopy signals of substrate has highly important impact for the measurement result of sample.Mesh
Front conventional material of infrared window such as MgF2, CaF2, BaF2, NaCl, AMTIR, AgBr, KCl, KRS-5, CsBr, Csl, ZnS,
ZnSe, Ge, Diamond, Si, Silica SiO2IR Grada, paraffin, do not have one to be capable of finger print region to functional group region
Territory (400cm-1To 6000cm-1) high permeability.The window base that waveband selection is different can be measured in actual applications different
The end, make troubles to experimenter；Even if also being difficult to reach more than due to the impact of refractive power factor at these materials of transmission region
The light transmittance of 97%.It addition, these conventional material of infrared windows self to there is also certain problem, such as NaCl and KBr easy
Being dissolved in water, the INFRARED ABSORPTION activity of paraffin self is relatively strong, BaF2Fragility is big, and Diamond is expensive.These problems are for reality
The most simply, the most fast, infrared spectrometry brings many puzzlements accurately.
Accordingly, it would be desirable to research and development one has high permeability and low index of refraction, and it is red to far infrared band to cover near-infrared
The infrared spectrum substrate of outer photo measure.
Summary of the invention
In order to solve the problems referred to above, the invention provides a kind of substrate for infrared spectrum, the structure bag of this substrate
Including Window layer and support substrate, Window layer is positioned on support substrate, selects the monatomic two dimension to 1000 atomic layer level thickness
Material；The horizontal cross-sectional shapes supporting substrate is circle, ellipse, triangle, square, rectangle, pentagon structure, positive six limits
Shape, octagonal, the physical dimension of described support substrate is 500 μm-5cm, and thickness is 1 μm-5cm；Support substrate is provided with
Some through-hole structures, through hole arranges in the form of an array, and the center of via-hole array keeps consistent substantially with the geometric center of substrate, logical
Spacing between hole is 1 μm-4cm；The Window layer position that described through hole is corresponding forms unsettled Window layer；Wherein said two dimension material
Material is selected from Graphene, molybdenum bisuphide, boron nitride, MX2, black phosphorus.
Preferably, described MX2Middle M is selected from Ti, and Zr, Hf, V, Nb, Ta, Re, X are selected from S, Se, Te.
Preferably, described window layer thickness scope is 0.3nm-1000nm.
Preferably, the horizontal tangent plane of described through hole be circle, ellipse, triangle, square, rectangle, pentagon structure,
Regular hexagon, octagonal.
Preferably, the aperture of described through hole is 25 μm-5cm.
Preferably, the material of described support substrate is metal.
Preferably, the material of described support substrate is mineral crystal or organic plastics.
Preferably, described support substrate is selected from aluminum, copper, Jin Gang.
Preferably, described support substrate is selected from silicon, quartz, calcium fluoride.
Preferably, the quantity of described through hole is 1-25.
Accompanying drawing explanation
With reference to the accompanying drawing enclosed, as follows by by embodiment of the present invention of the more purpose of the present invention, function and advantage
Description is illustrated, wherein:
Fig. 1 is the structural representation of the substrate for infrared spectrum according to the present invention.
Figure 1A is the profile of infrared spectrum substrate；Figure 1B is the top view of infrared spectrum substrate.
Fig. 2 is the structure material object exemplary plot of the substrate for infrared spectrum.
Fig. 2 A is the single-layer graphene optical microscope photograph figure (manhole, diameter 250 μm) as unsettled Window layer；
Fig. 2 B be single-layer graphene as unsettled Window layer optical microscope photograph figure ultramicroscope schematic diagram (manhole, directly
Footpath 250 μm)；Fig. 2 C is monolayer molybdenum bisuphide optical microscope photograph figure (square through hole, the length of side 100 μ as unsettled Window layer
m)；Fig. 2 D is the single-layer silicon nitride boron optical microscope photograph figure (square through hole, the length of side 100 μm) as unsettled Window layer.
Fig. 3 is material and the calcium fluoride transmitance for infrared spectrum substrate of the substrate for infrared spectrum of the present invention
Comparison diagram.
Fig. 4 is that the actual application of the substrate for infrared spectrum of the present invention is shown.
Fig. 5 diagrammatically illustrates the manufacture method schematic diagram of the substrate for infrared spectrum according to the present invention.
Described accompanying drawing is only and schematically and not in scale draws.Although the present invention being entered already in connection with preferred embodiment
Go description, it is to be understood that protection scope of the present invention is not limited to embodiment as described herein.
Detailed description of the invention
By with reference to one exemplary embodiment, the purpose of the present invention and function and for realizing the side of these purposes and function
Method will be illustrated.But, the present invention is not limited to one exemplary embodiment disclosed below；Can be come by multi-form
It is realized.The essence of description is only the detail helping the various equivalent modifications Integrated Understanding present invention.
Hereinafter, embodiments of the invention will be described with reference to the drawings.In the accompanying drawings, identical reference represents identical
Or similar parts, or same or similar step.
The invention provides a kind of substrate for infrared spectrum.Fig. 1 is the lining for infrared spectrum according to the present invention
The structural representation at the end.Wherein, Figure 1A is the profile of infrared spectrum substrate；Figure 1B is the top view of infrared spectrum substrate.As
Shown in Figure 1A and Figure 1B, this substrat structure includes: Window layer 101 and support substrate 102, Window layer 101 is positioned at support substrate
On 102, thickness is 0.3nm-1000nm, uses monoatomic layer extremely excellent infrared to having of 1000 atomic layers
The two-dimensional material of light transmission, such as: the Graphene of one layer to 1000 atomic layer level thickness, molybdenum bisuphide, boron nitride, MX2(M
=Ti, Zr, Hf, V, Nb, Ta, Re；X=S, Se, Te), black phosphorus.Support the horizontal cross-sectional shapes of substrate be circular, ellipse, three
Dihedral, square, rectangle, pentagon structure, regular hexagon, octagonal, the physical dimension of described support substrate be 500 μm-
5cm, thickness is 1 μm-5cm, and support substrate selection is stable material firm, smooth, such as metal (Al, Cu, Au, steel
Deng), mineral crystal (silicon, quartz, calcium fluoride etc.) and organic plastics etc..Support and in substrate, be provided with some (1-25) through hole knot
Structure 103, through hole is arranged in the form of an array, and the center of via-hole array keeps consistent, between through hole substantially with the geometric center of substrate
Spacing be 1 μm-4cm；The aperture of through hole is 25 μm-5cm, and the horizontal tangent plane of through hole is circle, ellipse, triangle, pros
Shape, rectangle, pentagon structure, regular hexagon, octagonal.The purpose supporting substrate processing through-hole structure is unsettled for being formed
Window, say, that support the corresponding unsettled Window layer 104 in the position of through hole in substrate.Unsettled Window layer 104 mainly profit
By the two-dimensional material of unsettled monoatomic layer to 1000 atomic layer, there is extremely excellent infrared light transmission performance and realize infrared
The purpose of detection.
Fig. 2 is the structure material object exemplary plot of the substrate for infrared spectrum.Wherein, Fig. 2 A is that single-layer graphene is as unsettled
The optical microscope photograph figure (manhole, diameter 250 μm) of Window layer；Fig. 2 B is that single-layer graphene is as unsettled Window layer
Optical microscope photograph figure ultramicroscope schematic diagram (manhole, diameter 250 μm)；Fig. 2 C is that monolayer molybdenum bisuphide is as outstanding
The optical microscope photograph figure (square through hole, the length of side 100 μm) of empty window layer；Fig. 2 D is that single-layer silicon nitride boron is as unsettled Window layer
Optical microscope photograph figure (square through hole, the length of side 100 μm).
As in figure 2 it is shown, use this special transfer method can successfully shift unsettled large-area monolayer, double-deck with
And multilayer two-dimension material, and the sample prepared is complete, clean.These unsettled two-dimensional material (Window layer) are because of thickness pole
Little, therefore there is great specific surface, but owing to their micro-mechanical properties, chemical property and thermodynamic property are stable,
Therefore molecule to be measured can be supported as Window layer.Further, since these materials itself not or only have the least intrinsic to inhale
Receiving and the transmitance of they excellences and low refractive index and the character of scattering power, therefore they have ratio as window material
The performance that legacy windows material is more excellent.
Fig. 3 is material and the calcium fluoride transmitance for infrared spectrum substrate of the substrate for infrared spectrum of the present invention
Comparison diagram.From figure 3, it can be seen that the CaF that contrast is conventional2Window material, the single-layer graphene of present invention exploitation, monolayer curing
These several substrates of molybdenum, single-layer silicon nitride boron all have the highest transmitance, almost close to 100% in full spectral limit.
Fig. 4 is that the actual application of the substrate for infrared spectrum of the present invention is shown.Fig. 4 is the CaF of 1mm thickness2、2nm
The MoS of Graphene and the 2nm thickness of thickness2The absorbance comparison diagram of PEO thin film is measured as substrate.As shown in Figure 4, surveying
When measuring the PEO thin film of 20nm, CaF2Substrate is the lowest due to the transmitance at lower wave number, therefore at the PEO absorption spectrum measured
The interference signal of the background of oblique line occurs in the range of lower wave number, makes the absorption signal in the range of part wave number have already decreased to noise
Under Bi, the absworption peak at wave number as shown by arrows in FIG., measurement result is produced impact.And Graphene and MoS2These are two years old
Kind substrate is owing to all having the highest transmitance in full spectral limit, and therefore baseline is straight line, it is thus achieved that sample intrinsic clearly
Absorption spectrum.And both substrates of the present invention are owing to all having the highest transmitance in full spectral limit, for intrinsic signals
Interference the lowest, the absorption signal of the most high-visible sample.
Fig. 5 diagrammatically illustrates the manufacture method schematic diagram of the substrate for infrared spectrum according to the present invention.Such as Fig. 5 institute
Show, comprise the following steps according to the manufacture method for the substrate of infrared spectrum of the present invention:
Step 501: choose support substrate, supports substrate and selects stable material firm, smooth, such as metal (Al, Cu,
Au, steel etc.), mineral crystal (silicon, quartz, calcium fluoride etc.) and organic plastics etc., one embodiment of the present of invention is selected thickness
It is that the silicon chip of 500 μm is as substrate；It is processed into suitable and the size of infrared spectrometry, the physical dimension of optimization by supporting substrate
It is 500 μm-5cm；The horizontal cross-sectional shapes supporting substrate is circle, ellipse, triangle, square, rectangle, pentagon knot
Structure, regular hexagon, octagonal；Thickness is 1 μm-5cm；
Step 502: preparing through-hole structure supporting in substrate, this step utilizes machining, dry method or wet etching
Method make some (1-25) through-hole structure, the horizontal tangent plane of through hole is circle, ellipse, triangle, square, square
Shape, pentagon structure, regular hexagon, octagonal, aperture is 25 μm-5cm；Through hole is arranged in the form of an array, in via-hole array
The heart keeps consistent substantially with the geometric center of substrate, and the spacing between through hole is 1 μm-4cm；
Step 503: transfer backing material a (Graphene (the thickness 0.3nm-selected from 1 layer to 1000 atomic layer level thickness
1000nm), molybdenum bisuphide, boron nitride, MX2(M=Ti, Zr, Hf, V, Nb, Ta, Re；X=S, Se, Te), black phosphorus) and its protection
Layer b (selected from PMMA, PVA or PDMS etc.), to through-hole surfaces, utilizes the wet method shifting process of standard, by backing material a and Qi Bao
Sheath b is transferred to sample surfaces, is dried by sample and heats the thin film making transfer with substrate laminating closely；
Step 504: seal the back side of through hole, utilizes another block base material to conform at backside through vias, uses
The through hole at the back side is sealed by glass cement c (or other method)；
Step 505: remove the protective layer of sample surfaces, is positioned over sample in acetone or other deprotection layer solvent,
Remove the protective layer on surface；
Step 506: remove the sealing structure at the sample back side, totally and removes the close of the back side after drying by sample clean
Envelope substrate, produces the substrate of infrared spectrum as shown in Figure 5, and the structure of this substrate includes from top to bottom: unsettled window
Layer and support substrate.
The present invention utilize the unsettled monatomic two-dimensional material to 1000 atomic layer level thickness (thickness be 0.3nm extremely
1000nm) there is extremely excellent infrared light transmission performance, it is achieved a kind of substrate for infrared spectrometry；Due to this substrate
There is abnormal good transmitance and extremely low index of refraction, it is thus possible to the infrared light of realization covering near-infrared to far infrared band
Spectrometry.Further, it is extremely low for the impact of sample signal, has good to-noise ratio.It is this based on two dimension that we develop
The material of infrared window of material film is of great significance and value in infrared spectrometry.
In conjunction with explanation and the practice of the present invention disclosed here, other embodiments of the present invention are for those skilled in the art
All it is easy to expect and understand.Illustrating and embodiment is to be considered only as exemplary, true scope and the purport of the present invention are equal
It is defined in the claims.
Claims (10)
1., for a substrate for infrared spectrum, the structure of this substrate includes Window layer and supports substrate,
Window layer is positioned on support substrate, selects the monatomic two-dimensional material to 1000 atomic layer level thickness；
The horizontal cross-sectional shapes supporting substrate is circle, ellipse, triangle, square, rectangle, pentagon structure, positive six limits
Shape, octagonal, the physical dimension of described support substrate is 500 μm-5cm, and thickness is 1 μm-5cm；
Supporting substrate and be provided with some through-hole structures, through hole is arranged in the form of an array, the center of via-hole array and substrate
Geometric center keeps consistent substantially, and the spacing between through hole is 1 μm-4cm；The Window layer position that described through hole is corresponding is formed unsettled
Window layer；
Wherein said two-dimensional material is selected from Graphene, molybdenum bisuphide, boron nitride, MX2, black phosphorus.
Infrared spectrum substrate the most according to claim 1, wherein said MX2Middle M is selected from Ti, Zr, Hf, V, Nb, Ta, Re, X
Selected from S, Se, Te.
Infrared spectrum substrate the most according to claim 1, wherein said window layer thickness scope is 0.3nm-1000nm.
Infrared spectrum substrate the most according to claim 1, the horizontal tangent plane of wherein said through hole be circular, oval, three
Dihedral, square, rectangle, pentagon structure, regular hexagon, octagonal.
Infrared spectrum substrate the most according to claim 1, the aperture of wherein said through hole is 25 μm-5cm.
Infrared spectrum substrate the most according to claim 1, the material of described support substrate is metal.
Infrared spectrum substrate the most according to claim 1, the material of described support substrate is mineral crystal or organic plastics.
Infrared spectrum substrate the most according to claim 6, described support substrate is selected from aluminum, copper, Jin Gang.
Infrared spectrum substrate the most according to claim 7, described support substrate is selected from silicon, quartz, calcium fluoride.
Infrared spectrum substrate the most according to claim 1, the quantity of described through hole is 1-25.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108417660A (en) * | 2018-05-10 | 2018-08-17 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet infrared double-color detector and preparation method thereof |
| CN109856819A (en) * | 2019-04-16 | 2019-06-07 | 湖南师范大学 | A kind of positive and negative adjustable optical time delay unit of infrared band |
| CN111337445A (en) * | 2019-12-02 | 2020-06-26 | 厦门大学 | Dielectric super surface based on angle scanning enhanced infrared spectrum absorption |
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| KR20020041540A (en) * | 2000-11-28 | 2002-06-03 | 이 해 욱 | Bolometric Infrared Sensor |
| CN102265126A (en) * | 2008-10-24 | 2011-11-30 | 派洛斯有限公司 | Infrared light detector and production thereof |
| CN104787754A (en) * | 2015-03-19 | 2015-07-22 | 中国科学院物理研究所 | Preparation method of suspended graphene |
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| KR20020041540A (en) * | 2000-11-28 | 2002-06-03 | 이 해 욱 | Bolometric Infrared Sensor |
| CN102265126A (en) * | 2008-10-24 | 2011-11-30 | 派洛斯有限公司 | Infrared light detector and production thereof |
| CN104787754A (en) * | 2015-03-19 | 2015-07-22 | 中国科学院物理研究所 | Preparation method of suspended graphene |
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| CN108417660A (en) * | 2018-05-10 | 2018-08-17 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet infrared double-color detector and preparation method thereof |
| CN109856819A (en) * | 2019-04-16 | 2019-06-07 | 湖南师范大学 | A kind of positive and negative adjustable optical time delay unit of infrared band |
| CN109856819B (en) * | 2019-04-16 | 2019-12-24 | 湖南师范大学 | Infrared wave band positive and negative adjustable optical delayer |
| CN111337445A (en) * | 2019-12-02 | 2020-06-26 | 厦门大学 | Dielectric super surface based on angle scanning enhanced infrared spectrum absorption |
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