CN109856819A - A kind of positive and negative adjustable optical time delay unit of infrared band - Google Patents
A kind of positive and negative adjustable optical time delay unit of infrared band Download PDFInfo
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- CN109856819A CN109856819A CN201910302645.3A CN201910302645A CN109856819A CN 109856819 A CN109856819 A CN 109856819A CN 201910302645 A CN201910302645 A CN 201910302645A CN 109856819 A CN109856819 A CN 109856819A
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- boron nitride
- hexagonal boron
- graphene layer
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- time delay
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- 230000003287 optical effect Effects 0.000 title claims abstract description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052582 BN Inorganic materials 0.000 claims abstract description 38
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 23
- 239000002356 single layer Substances 0.000 description 4
- 230000003111 delayed effect Effects 0.000 description 3
- 150000001336 alkenes Chemical class 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a kind of positive and negative adjustable optical time delay units of infrared band, including graphene layer, hexagonal boron nitride, silicon dioxide substrates, hexagonal boron nitride bottom is equipped with silicon dioxide substrates, is covered with graphene layer at the top of hexagonal boron nitride, external voltage source on graphene layer；Delayer is placed in air, infrared incident light from air incidence to device on, then reflected back into air by infrared external reflection light.The present invention is equipped with the hetero-junctions being made of graphene layer, hexagonal boron nitride, due to the electric tunable characteristic of graphene conductivity after transverse magnetic light enters hetero-junctions, fermi level is controlled by adjusting external voltage, delay time can neatly be regulated and controled, hyperbolic characteristic based on hexagonal boron nitride can make delay time by just switching over to negative.
Description
Technical field
The present invention relates to a kind of optical time delay unit, in particular to a kind of positive and negative adjustable optical time delay unit of infrared band.
Background technique
The validity of tunable broad band delay line can significantly improve the efficiency and handling capacity of the following reconfigurable optical network.Cause
This, tunable optical delay line is the pass that the following optical switching network realizes synchronous, frame head identification, caching, Optical Time Division Multiplexing and equilibrium
Where key.Tunable delay line is considered in the non-linear of synchronizer and multiplexer, balanced device, correlator, logic gate and enhancing
There can be direct application with field of signal processing such as functions.But in systems in practice in application, must think over it is tunable
The related key parameter of delay line proves its specific application in optical system.For example, postponing bandwidth, maximum delay, prolonging
Slow range, delay resolution, delay precision, delay reconstruction time, fractional delay and delay wastage etc..
In recent years, the scientific circles that appear in of graphene cause great concern.Since its unique electronics and optics are special
Property becomes the substitute of tunable material excellent in optical system.Graphene is in optical modulator, ultrafast photoelectric detector, table
Very big application prospect is shown in many applications such as surface plasma excimer device, optical fiber laser and nonlinear photon.More
Importantly, due to which it shows height-adjustable carrier concentration under the conditions of electrostatic gates, to realize Microwave photonics etc.
Tunable devices provide effective approach.
Infrared band is an important wave band in solar radiation light, has in each sciemtifec and technical sphere particularly significant
Application, including sensing, environmental monitoring and thermal imaging etc..And the tunable delay technology based on graphene has focused largely on light and leads to
Believe wave band and terahertz wave band, rarely has the tunable delay device for making wide scope using infrared band, and the structure pair rarely having
Poor in the regulation flexibility of delay, delayed scope is relatively narrow, is only able to achieve or positive or negative one direction regulates and controls.
Summary of the invention
In order to solve the above technical problem, the present invention provides a kind of positive and negative adjustable light delays of the simple infrared band of structure
Device.
Technical proposal that the invention solves the above-mentioned problems is: a kind of positive and negative adjustable optical time delay unit of infrared band, including stone
Black alkene layer, hexagonal boron nitride, silicon dioxide substrates, hexagonal boron nitride bottom are equipped with silicon dioxide substrates, hexagonal boron nitride top
It is covered with graphene layer, external voltage source on graphene layer；Delayer is placed in air, and infrared incident light is from air incidence to device
On part, then reflected back into air by infrared external reflection light.
The above-mentioned positive and negative adjustable optical time delay unit of infrared band, delayer are integrally square, and delayer side length is 50 μm.
The above-mentioned positive and negative adjustable optical time delay unit of infrared band, the graphene layer section are square, graphene layer thickness
For 0.34nm ~ 1.02nm, graphene layer side length is 50 μm.
The above-mentioned positive and negative adjustable optical time delay unit of infrared band, the hexagonal boron nitride section are square, hexagonal boron nitride
With a thickness of 110nm, hexagonal boron nitride side length is 50 μm.
The above-mentioned positive and negative adjustable optical time delay unit of infrared band, the silicon dioxide liner basal cross section are square, silica
Substrate thickness is 2mm, and silicon dioxide liner bottom side length is 50 μm, relative dielectric constant 3.9.
The above-mentioned positive and negative adjustable optical time delay unit of infrared band, the infrared incident light are transverse magnetic light, and operation wavelength is
12~12.12μm。
The beneficial effects of the present invention are: the present invention is equipped with the hetero-junctions being made of graphene layer, hexagonal boron nitride, works as cross
Magnetic polarised light enters the electric tunable characteristic after hetero-junctions due to graphene conductivity, passes through and adjusts external voltage and control Fermi's energy
Grade, can neatly regulate and control delay time, the hyperbolic characteristic based on hexagonal boron nitride, and delay time can be made by just carrying out to negative
Switching；It by the specific parameter setting of progress, can also expand delayed scope, realize big positive delay and big negative delay, structure is simple,
Reachable -69.8 ~ 71.71ps of delayed scope.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention, and figure mid-infrared light line is propagated along the Z direction.
Fig. 2 is the relational graph of different fermi levels and delay time in the embodiment of the present invention one.
Fig. 3 is the relational graph of different graphene number of plies and delay time in the embodiment of the present invention two.
Fig. 4 is the relational graph of incident angle and delay time in the embodiment of the present invention three.
Fig. 5 is the relational graph of hexagonal boron nitride thickness and delay time in the embodiment of the present invention four.
In figure, 1 is infrared incident light；2 be infrared external reflection light；3 be graphene layer；4 be hexagonal boron nitride；5 be titanium dioxide
Silicon substrate；6 be voltage source.
Specific embodiment
The present invention is further illustrated with reference to the accompanying drawings and examples.
As shown in Figure 1, a kind of positive and negative adjustable optical time delay unit of infrared band, including graphene layer 3, hexagonal boron nitride 4, two
Silicon oxide substrate 5,4 bottom of hexagonal boron nitride are equipped with silicon dioxide substrates 5, are covered with graphene layer 3 at the top of hexagonal boron nitride 4,
External voltage source 6 on graphene layer 3；Delayer is placed in air, infrared incident light 1 from air incidence to device on, then lead to
Infrared external reflection light 2 is crossed to reflect back into air.
Delayer is integrally square, and delayer side length is 50 μm.
3 section of graphene layer is square, and graphene layer 3 is with a thickness of 0.34nm ~ 1.02nm, 3 side of graphene layer
A length of 50 μm.
4 section of hexagonal boron nitride is square, and hexagonal boron nitride 4 is with a thickness of 110nm, 4 side length of hexagonal boron nitride
50μm。
5 section of silicon dioxide substrates is square, and silicon dioxide substrates 5 are with a thickness of 2mm, 5 side of silicon dioxide substrates
A length of 50 μm, relative dielectric constant 3.9.
The infrared incident light 1 is horizontal magnetic (TM) polarised light, and operation wavelength is 12 ~ 12.12 μm.
When TM polarised light is inputted from 1 input terminal of incident light, there is applied voltage in graphene layer 3, incident angle is 45 °,
Under conditions of hexagonal boron nitride 4 is with a thickness of 110nm, i.e., as graphene fermi level EF=0.35eV, delayer is realized
30.93ps delay；As fermi level 0.7eV, when other conditions are constant, delayer realizes the delay of 71.71ps；Work as Fermi
Energy level 1.05eV, when other conditions are constant, delayer realizes the delay of 56.93ps；When change graphene number of plies 3(, that is, thickness
1.02nm is become from 0.34nm) when, delay has certain variation；It, can when changing incident angle from 40 ~ 55 ° of transformation
To realize the positive and negative switching of delay, reference time delay can be of about -3.66 ~ 71.71ps；When changing 4 thickness of hexagonal boron nitride from 100
The positive and negative switching of delay may be implemented when ~ 130nm, reference time delay can be of about -69.8 ~ 71.71ps.
Embodiment one
Optical time delay unit section is square, and square side length is 50 μm.Graphene layer is single-layer graphene, with a thickness of 0.34nm,
Hexagonal boron nitride is with a thickness of 110 μm, and silicon dioxide substrates are with a thickness of 2mm, relative dielectric constant 3.9, incident angle θ=45 °.
As graphene layer fermi level EF=0.35eV, delayer realizes the delay of 30.93ps；As fermi level 0.7eV, other
When condition is constant, delayer realizes the delay of 71.71ps；As fermi level 1.05eV, when other conditions are constant, delayer is real
The delay of 56.93ps is showed.Suitable fermi level can be selected when use as needed.
Embodiment two
Optical time delay unit section is square, and square side length is 50 μm.Hexagonal boron nitride is with a thickness of 110nm, silicon dioxide substrates
With a thickness of 2mm, relative dielectric constant 3.9, fermi level EF=0.7eV, incident angle θ=45 °.When graphene layer is single layer stone
Black alkene, with a thickness of 0.34nm, delayer realizes the delay of 71.71ps；When graphene layer be bilayer graphene, with a thickness of
0.68nm, delayer realize the delay of 22.86ps；When graphene layer is three layers of graphene, with a thickness of 1.02nm, delayer is real
The delay of 6.36ps is showed；The suitable number of plies can be selected when use as needed.
Embodiment three
Optical time delay unit section is square, and square side length is 50 μm.Graphene layer is single-layer graphene, with a thickness of 0.34nm,
Hexagonal boron nitride is with a thickness of 110nm, and silicon dioxide substrates are with a thickness of 2mm, relative dielectric constant 3.9, and fermi level EF=
0.7eV.When incident angle θ=40 °, delayer realizes the delay of 5.36ps；When incident angle θ=45 °, other conditions are not
When change, delayer realizes the delay of 71.71ps；When incident angle θ=50 °, when other conditions are constant, delayer realized-
The delay of 7.5ps；When incident angle θ=55 °, when other conditions are constant, delayer realizes the delay of -3.66ps.Change incident
For angle from the positive and negative switching that delay when 40 ~ 55 ° of transformation, may be implemented, reference time delay can be of about -3.66 ~ 71.71ps.Make
Used time can select suitable incident angle as needed.
Example IV
Optical time delay unit section is square, and square side length is 50 μm.Graphene layer is single-layer graphene, with a thickness of 0.34nm,
Silicon dioxide substrates are with a thickness of 2mm, relative dielectric constant 3.9, fermi level EF=0.7eV, incident angle θ=45 °.As six sides
When boron nitride is with a thickness of 100nm, delayer realizes the delay of 22.74ps；When hexagonal boron nitride is with a thickness of 110nm, other
When part is constant, delayer realizes the delay of 71.71ps；When hexagonal boron nitride is with a thickness of 120nm, when other conditions are constant, prolong
When device realize the delay of -69.88ps；When hexagonal boron nitride is with a thickness of 130nm, when other conditions are constant, delayer realized-
26.4ps delay.The positive and negative switching of delay, reference time delay may be implemented when changing hexagonal boron nitride thickness from 100 ~ 130nm
It can be of about -69.8 ~ 71.71ps.Suitable hexagonal boron nitride thickness can be selected when use as needed.
Claims (6)
1. a kind of positive and negative adjustable optical time delay unit of infrared band, it is characterised in that: including graphene layer, hexagonal boron nitride, dioxy
Silicon substrate, hexagonal boron nitride bottom are equipped with silicon dioxide substrates, are covered with graphene layer, graphene layer at the top of hexagonal boron nitride
Upper external voltage source；Delayer is placed in air, infrared incident light from air incidence to device on, then pass through infrared external reflection light
Reflect back into air.
2. the positive and negative adjustable optical time delay unit of infrared band according to claim 1, it is characterised in that: delayer is integrally positive
Rectangular, delayer side length is 50 μm.
3. the positive and negative adjustable optical time delay unit of infrared band according to claim 1, it is characterised in that: the graphene layer is cut
Face is square, and for graphene layer with a thickness of 0.34nm ~ 1.02nm, graphene layer side length is 50 μm.
4. the positive and negative adjustable optical time delay unit of infrared band according to claim 1, it is characterised in that: the hexagonal boron nitride
Section is square, and for hexagonal boron nitride with a thickness of 110nm, hexagonal boron nitride side length is 50 μm.
5. the positive and negative adjustable optical time delay unit of infrared band according to claim 1, it is characterised in that: the silicon dioxide liner
Basal cross section is square, and silicon dioxide substrates are 50 μm with a thickness of 2mm, silicon dioxide liner bottom side length, and relative dielectric constant is
3.9。
6. the positive and negative adjustable optical time delay unit of infrared band according to claim 1, it is characterised in that: the infrared incident light
For transverse magnetic light, operation wavelength is 12 ~ 12.12 μm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110174374A (en) * | 2019-06-28 | 2019-08-27 | 湖南师范大学 | A kind of SPR index sensor of infrared band |
| CN111443504A (en) * | 2020-03-13 | 2020-07-24 | 西安电子科技大学 | Intermediate infrared voltage adjustable filter, preparation method thereof and filtering method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103031516A (en) * | 2013-01-18 | 2013-04-10 | 浙江大学 | Preparation method of hexagonal phase boron nitride film |
| CN106206776A (en) * | 2016-07-28 | 2016-12-07 | 国家纳米科学中心 | A kind of substrate for infrared spectrum |
-
2019
- 2019-04-16 CN CN201910302645.3A patent/CN109856819B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103031516A (en) * | 2013-01-18 | 2013-04-10 | 浙江大学 | Preparation method of hexagonal phase boron nitride film |
| CN106206776A (en) * | 2016-07-28 | 2016-12-07 | 国家纳米科学中心 | A kind of substrate for infrared spectrum |
Non-Patent Citations (3)
| Title |
|---|
| ANNA TYSZKA-ZAWADZKA等: "Tunable slow light in graphene-based hyperbolic metamaterial waveguide operating in SCLU telecom bands", 《OPTICS EXPRESS》 * |
| G. X. NI等: "Ultrafast optical switching of infrared Plasmon polaritons in high-mobility graphene", 《NATURE PHOTONICS》 * |
| GIUSEPPE BRUNETTI等: "Design of an ultra-compact graphene-based integrated microphotonic tunable delay line", 《OPTICS EXPRESS》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110174374A (en) * | 2019-06-28 | 2019-08-27 | 湖南师范大学 | A kind of SPR index sensor of infrared band |
| CN111443504A (en) * | 2020-03-13 | 2020-07-24 | 西安电子科技大学 | Intermediate infrared voltage adjustable filter, preparation method thereof and filtering method |
| CN111443504B (en) * | 2020-03-13 | 2022-02-18 | 西安电子科技大学 | Intermediate infrared voltage adjustable filter, preparation method thereof and filtering method |
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| CN109856819B (en) | 2019-12-24 |
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Effective date of registration: 20231222 Address after: Room 301, 3rd Floor, Building C5, Phase I, Jinrong Wangcheng Science and Technology Industrial Park, Purui West Road, Wangcheng Economic and Technological Development Zone, Changsha City, Hunan Province, 410000 Patentee after: Hunan Aikewei Semiconductor Equipment Co.,Ltd. Address before: 410012 Lushan South Road, Yuelu District, Changsha City, Hunan Province Patentee before: HUNAN NORMAL University |