CN109856819B - Infrared wave band positive and negative adjustable optical delayer - Google Patents
Infrared wave band positive and negative adjustable optical delayer Download PDFInfo
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- CN109856819B CN109856819B CN201910302645.3A CN201910302645A CN109856819B CN 109856819 B CN109856819 B CN 109856819B CN 201910302645 A CN201910302645 A CN 201910302645A CN 109856819 B CN109856819 B CN 109856819B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052582 BN Inorganic materials 0.000 claims abstract description 39
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 39
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 29
- 239000002356 single layer Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses an infrared band positive and negative adjustable optical delayer, which comprises a graphene layer, hexagonal boron nitride and a silicon dioxide substrate, wherein the silicon dioxide substrate is arranged at the bottom of the hexagonal boron nitride, the graphene layer covers the top of the hexagonal boron nitride, and a voltage source is externally connected onto the graphene layer; the retarder is placed in air, and infrared incident light is incident on the device from air and then reflected back into air by infrared reflected light. The invention is provided with the heterojunction formed by the graphene layer and the hexagonal boron nitride, after transverse magnetic polarized light enters the heterojunction, the Fermi level is controlled by adjusting external voltage due to the electric tunable characteristic of the conductivity of graphene, so that the delay time can be flexibly regulated, and the delay time can be switched from positive to negative based on the hyperbolic characteristic of the hexagonal boron nitride.
Description
Technical Field
The invention relates to an optical delayer, in particular to an optical delayer with adjustable infrared band positive and negative.
Background
The effectiveness of tunable broadband delay lines can significantly improve the efficiency and throughput of future reconfigurable optical networks. Therefore, the tunable optical delay line is the key for realizing synchronization, frame header identification, buffering, optical time division multiplexing and equalization in future optical switching networks. Tunable delay lines are considered to have direct application in signal processing areas such as synchronizers and multiplexers, equalizers, correlators, logic gates and enhanced non-linear available functions. But when applied in a practical system, the key parameters associated with the tunable delay line must be carefully considered to demonstrate its particular application in an optical system. Such as delay bandwidth, maximum delay, delay range, delay resolution, delay accuracy, delay reconstruction time, fractional delay, delay loss, and the like.
In recent years, the appearance of graphene has attracted considerable attention in the scientific community. Due to their unique electronic and optical properties, are excellent alternatives to tunable materials in optical systems. Graphene shows great application prospects in a variety of applications such as optical modulators, ultrafast photodetectors, surface plasma lasers, fiber lasers, nonlinear photonics, and the like. More importantly, the tunable photonic crystal material shows highly adjustable carrier concentration under the condition of electrostatic gating, and provides an effective way for realizing tunable devices such as microwave photonics and the like.
The infrared band is an important band in solar radiation, and has important applications in various scientific and technological fields, including sensing, environmental monitoring, thermal imaging, and the like. Most of the graphene-based tunable delay technologies are focused on optical communication bands and terahertz bands, a wide-range tunable delay device is made by utilizing an infrared band, the flexibility of the adjustment and control of the delay of a modern structure is poor, the delay range is narrow, and only positive or negative one-way adjustment and control can be realized.
Disclosure of Invention
In order to solve the technical problem, the invention provides the optical delayer with the simple structure and the adjustable positive and negative infrared wave bands.
The technical scheme for solving the problems is as follows: a photo-delay timer with adjustable infrared band positive and negative comprises a graphene layer, hexagonal boron nitride and a silicon dioxide substrate, wherein the silicon dioxide substrate is arranged at the bottom of the hexagonal boron nitride, the graphene layer covers the top of the hexagonal boron nitride, and a voltage source is externally connected onto the graphene layer; the retarder is placed in air, and infrared incident light is incident on the device from air and then reflected back into air by infrared reflected light.
In the optical delayer with the adjustable infrared band positive and negative, the whole delayer is square, and the side length of the delayer is 50 microns.
According to the optical delayer with the adjustable infrared wave band positive and negative, the section of the graphene layer is square, the thickness of the graphene layer is 0.34nm ~ 1.02.02 nm, and the side length of the graphene layer is 50 microns.
According to the optical delayer with the adjustable infrared band positive and negative, the section of the hexagonal boron nitride is square, the thickness of the hexagonal boron nitride is 110nm, and the side length of the hexagonal boron nitride is 50 microns.
According to the optical delayer with the adjustable infrared band positive and negative, the section of the silicon dioxide substrate is square, the thickness of the silicon dioxide substrate is 2mm, the side length of the silicon dioxide substrate is 50 micrometers, and the relative dielectric constant is 3.9.
In the optical delayer with the adjustable infrared band positive and negative, the infrared incident light is transverse magnetic polarized light, and the working wavelength is 12 ~ 12.12.12 microns.
The graphene heterojunction with the adjustable delay time has the advantages that the graphene heterojunction is formed by the graphene layer and the hexagonal boron nitride, after transverse magnetic polarized light enters the heterojunction, due to the electric tunable characteristic of the conductivity of graphene, the Fermi level is controlled by adjusting external voltage, the delay time can be flexibly adjusted and controlled, the delay time can be switched from positive to negative based on the hyperbolic characteristic of the hexagonal boron nitride, the delay range can be expanded by setting specific parameters, the large positive delay and the large negative delay are realized, the structure is simple, and the delay range can reach-69.8 ~ 71.71 ps.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention, in which infrared light propagates along the Z direction.
FIG. 2 is a graph of different Fermi levels versus delay time in a first embodiment of the present invention.
Fig. 3 is a graph showing the relationship between different numbers of graphene layers and delay time in the second embodiment of the present invention.
Fig. 4 is a diagram illustrating the relationship between the incident angle and the delay time in the third embodiment of the present invention.
FIG. 5 is a graph showing the thickness of hexagonal boron nitride as a function of delay time according to example IV of the present invention.
In the figure, 1 is infrared incident light; 2 is infrared reflected light; 3 is a graphene layer; 4 is hexagonal boron nitride; 5 is a silicon dioxide substrate; and 6 is a voltage source.
Detailed Description
The invention is further described below with reference to the figures and examples.
As shown in fig. 1, the optical delayer with adjustable positive and negative infrared bands comprises a graphene layer 3, hexagonal boron nitride 4 and a silicon dioxide substrate 5, wherein the silicon dioxide substrate 5 is arranged at the bottom of the hexagonal boron nitride 4, the graphene layer 3 covers the top of the hexagonal boron nitride 4, and the graphene layer 3 is externally connected with a voltage source 6; the retarder is placed in air and infrared incident light 1 is incident on the device from air and then reflected back into air by infrared reflected light 2.
The whole delayer is square, and the side length of the delayer is 50 mu m.
The section of the graphene layer 3 is square, the thickness of the graphene layer 3 is 0.34nm ~ 1.02.02 nm, and the side length of the graphene layer 3 is 50 micrometers.
The section of the hexagonal boron nitride 4 is square, the thickness of the hexagonal boron nitride 4 is 110nm, and the side length of the hexagonal boron nitride 4 is 50 microns.
The section of the silicon dioxide substrate 5 is square, the thickness of the silicon dioxide substrate 5 is 2mm, the side length of the silicon dioxide substrate 5 is 50 micrometers, and the relative dielectric constant is 3.9.
The infrared incident light 1 is Transverse Magnetic (TM) polarized light, and the working wavelength is 12 ~ 12.12.12 μm.
When TM polarized light is input from an input end of incident light 1, under the conditions that an external voltage is applied to a graphene layer 3, the incident angle is 45 degrees, and the thickness of hexagonal boron nitride 4 is 110nm, namely when a graphene Fermi level EF =0.35eV, the time delay device achieves 30.93ps of time delay, when the Fermi level is 0.7eV and other conditions are unchanged, the time delay device achieves 71.71ps of time delay, when the Fermi level is 1.05eV and other conditions are unchanged, the time delay device achieves 56.93ps of time delay, when the number of graphene layers is changed to be 3 (namely the thickness is changed from 0.34nm to 1.02 nm), the time delay has a certain change, when the incident angle is changed from 40 ~ 55 degrees, the positive and negative switching of the time delay can be achieved, the time delay range can reach about-3.66 ~ 71.71ps, when the thickness of the hexagonal boron nitride 4 is changed from 100 ~ 130nm to be achieved, the positive and negative switching of the time delay range can reach about-69.8 ~ 71.71 ps.
Example one
The section of the optical delayer is square, and the side length of the square is 50 mu m. The graphene layer is single-layer graphene, the thickness of the graphene layer is 0.34nm, the thickness of the hexagonal boron nitride is 110 microns, the thickness of the silicon dioxide substrate is 2mm, the relative dielectric constant is 3.9, and the incident angle theta =45 degrees. When the Fermi level EF =0.35eV of the graphene layer, the time delayer realizes the time delay of 30.93 ps; when the Fermi level is 0.7eV and other conditions are not changed, the delayer realizes 71.71ps of delay; when the Fermi level is 1.05eV and other conditions are not changed, the time delayer realizes the time delay of 56.93 ps. When in use, the appropriate Fermi level can be selected according to the needs.
Example two
The section of the optical delayer is square, and the side length of the square is 50 mu m. The thickness of hexagonal boron nitride is 110nm, the thickness of a silicon dioxide substrate is 2mm, the relative dielectric constant is 3.9, the fermi level EF =0.7eV, and the incident angle θ =45 °. When the graphene layer is single-layer graphene and the thickness is 0.34nm, the delayer realizes 71.71ps of delay; when the graphene layer is double-layer graphene and the thickness is 0.68nm, the time delay device realizes the time delay of 22.86 ps; when the graphene layer is three-layer graphene and the thickness is 1.02nm, the time delay device realizes the time delay of 6.36 ps; when in use, the proper number of layers can be selected according to the requirement.
EXAMPLE III
The section of the optical delayer is square, the side length of the square is 50 mu m, the graphene layer is single-layer graphene, the thickness is 0.34nm, the thickness of hexagonal boron nitride is 110nm, the thickness of a silicon dioxide substrate is 2mm, the relative dielectric constant is 3.9, the Fermi level EF =0.7 eV., when the incident angle theta =40 degrees, the delayer achieves the time delay of 5.36ps, when the incident angle theta =45 degrees and other conditions are unchanged, the delayer achieves the time delay of 71.71ps, when the incident angle theta =50 degrees and other conditions are unchanged, the delayer achieves the time delay of-7.5 ps, when the incident angle theta =55 degrees and other conditions are unchanged, the delayer achieves the time delay of-3.66 ps, when the incident angle is changed from 40 ~ 55 degrees, the positive and negative switching of the time delay can be achieved, and when the delay range can be about-3.66 ~ 71.71 ps., the proper incident angle can be selected according to requirements.
Example four
The optical delayer is square in section, the side length of the square is 50 microns, the graphene layer is single-layer graphene, the thickness of the graphene layer is 0.34nm, the thickness of a silicon dioxide substrate is 2mm, the relative dielectric constant is 3.9, the Fermi level EF =0.7eV, the incident angle theta =45 degrees, when the thickness of hexagonal boron nitride is 100nm, the delayer achieves the time delay of 22.74ps, when the thickness of the hexagonal boron nitride is 110nm, other conditions are unchanged, the delayer achieves the time delay of 71.71ps, when the thickness of the hexagonal boron nitride is 120nm, other conditions are unchanged, the delayer achieves the time delay of-69.88 ps, when the thickness of the hexagonal boron nitride is 130nm, other conditions are unchanged, the delayer achieves the time delay of-26.4 ps, when the thickness of the hexagonal boron nitride is changed from 100 ~ 130nm, the positive and negative switching of the time delay can be achieved, and the time delay range can be about-69.8. 69.8 ~ 71.71 ps., and when the hexagonal boron nitride is used, the hexagonal boron nitride can be selected as required.
Claims (5)
1. An optical delayer with adjustable positive and negative infrared bands is characterized by comprising a graphene layer, hexagonal boron nitride and a silicon dioxide substrate, wherein the silicon dioxide substrate is arranged at the bottom of the hexagonal boron nitride, the graphene layer covers the top of the hexagonal boron nitride, a voltage source is externally connected onto the graphene layer, the delayer is placed in the air, infrared incident light enters a device from the air and then is reflected back to the air through infrared reflected light, the infrared incident light is transverse magnetic polarized light, and the working wavelength is 12 ~ 12.12.12 microns.
2. The optical delay timer of claim 1, wherein: the whole delayer is square, and the side length of the delayer is 50 mu m.
3. The optical delay timer with adjustable positive and negative infrared bands of claim 1 is characterized in that the section of the graphene layer is square, the thickness of the graphene layer is 0.34nm ~ 1.02.02 nm, and the side length of the graphene layer is 50 μm.
4. The optical delay timer of claim 1, wherein: the section of the hexagonal boron nitride is square, the thickness of the hexagonal boron nitride is 110nm, and the side length of the hexagonal boron nitride is 50 mu m.
5. The optical delay timer of claim 1, wherein: the silicon dioxide substrate is square in cross section, the thickness of the silicon dioxide substrate is 2mm, the side length of the silicon dioxide substrate is 50 micrometers, and the relative dielectric constant is 3.9.
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| CN110174374A (en) * | 2019-06-28 | 2019-08-27 | 湖南师范大学 | A kind of SPR index sensor of infrared band |
| CN111443504B (en) * | 2020-03-13 | 2022-02-18 | 西安电子科技大学 | Intermediate infrared voltage adjustable filter, preparation method thereof and filtering method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103031516A (en) * | 2013-01-18 | 2013-04-10 | 浙江大学 | Preparation method of hexagonal phase boron nitride film |
| CN106206776A (en) * | 2016-07-28 | 2016-12-07 | 国家纳米科学中心 | A kind of substrate for infrared spectrum |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103031516A (en) * | 2013-01-18 | 2013-04-10 | 浙江大学 | Preparation method of hexagonal phase boron nitride film |
| CN106206776A (en) * | 2016-07-28 | 2016-12-07 | 国家纳米科学中心 | A kind of substrate for infrared spectrum |
Non-Patent Citations (3)
| Title |
|---|
| Design of an ultra-compact graphene-based integrated microphotonic tunable delay line;GIUSEPPE BRUNETTI等;《OPTICS EXPRESS》;20180213;全文 * |
| Tunable slow light in graphene-based hyperbolic metamaterial waveguide operating in SCLU telecom bands;ANNA TYSZKA-ZAWADZKA等;《OPTICS EXPRESS》;20170321;Theoretical model部分第1段- Results and discussion最后一段 * |
| Ultrafast optical switching of infrared Plasmon polaritons in high-mobility graphene;G. X. Ni等;《nature photonics》;20160430;第244页右栏第2段-第247页左栏第1段及图1 * |
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Effective date of registration: 20231222 Address after: Room 301, 3rd Floor, Building C5, Phase I, Jinrong Wangcheng Science and Technology Industrial Park, Purui West Road, Wangcheng Economic and Technological Development Zone, Changsha City, Hunan Province, 410000 Patentee after: Hunan Aikewei Semiconductor Equipment Co.,Ltd. Address before: 410012 Lushan South Road, Yuelu District, Changsha City, Hunan Province Patentee before: HUNAN NORMAL University |