CN106206775A - Store including gas based on adsorbent and the gas cabinet assembly of induction system - Google Patents
Store including gas based on adsorbent and the gas cabinet assembly of induction system Download PDFInfo
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- CN106206775A CN106206775A CN201610546763.5A CN201610546763A CN106206775A CN 106206775 A CN106206775 A CN 106206775A CN 201610546763 A CN201610546763 A CN 201610546763A CN 106206775 A CN106206775 A CN 106206775A
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- sensor
- gas
- cabinet assembly
- silicon
- silicon chip
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- 239000003463 adsorbent Substances 0.000 title claims abstract description 29
- 230000006698 induction Effects 0.000 title claims abstract description 28
- 229910021418 black silicon Inorganic materials 0.000 claims abstract description 97
- 238000003860 storage Methods 0.000 claims abstract description 38
- 230000005611 electricity Effects 0.000 claims abstract description 15
- 238000009826 distribution Methods 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 182
- 229910052710 silicon Inorganic materials 0.000 description 134
- 239000010703 silicon Substances 0.000 description 134
- 239000007789 gas Substances 0.000 description 93
- SZVJSHCCFOBDDC-UHFFFAOYSA-N ferrosoferric oxide Chemical compound O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 61
- 239000010408 film Substances 0.000 description 54
- 239000000243 solution Substances 0.000 description 45
- 238000000034 method Methods 0.000 description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 42
- 239000002122 magnetic nanoparticle Substances 0.000 description 37
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 32
- 229910052593 corundum Inorganic materials 0.000 description 32
- 229910001845 yogo sapphire Inorganic materials 0.000 description 32
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 30
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 30
- 238000009792 diffusion process Methods 0.000 description 30
- 229910004205 SiNX Inorganic materials 0.000 description 27
- 229910000881 Cu alloy Inorganic materials 0.000 description 21
- 229910000990 Ni alloy Inorganic materials 0.000 description 21
- 238000006243 chemical reaction Methods 0.000 description 21
- 229910052681 coesite Inorganic materials 0.000 description 21
- 229910052906 cristobalite Inorganic materials 0.000 description 21
- 239000000377 silicon dioxide Substances 0.000 description 21
- 229910052682 stishovite Inorganic materials 0.000 description 21
- 229910052905 tridymite Inorganic materials 0.000 description 21
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 20
- 239000011259 mixed solution Substances 0.000 description 20
- 238000007254 oxidation reaction Methods 0.000 description 20
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 20
- 238000002360 preparation method Methods 0.000 description 20
- 238000004544 sputter deposition Methods 0.000 description 20
- 238000002161 passivation Methods 0.000 description 17
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 15
- 238000004140 cleaning Methods 0.000 description 15
- 239000008367 deionised water Substances 0.000 description 15
- 229910021641 deionized water Inorganic materials 0.000 description 15
- 238000005530 etching Methods 0.000 description 15
- 150000002505 iron Chemical class 0.000 description 15
- 238000001755 magnetron sputter deposition Methods 0.000 description 15
- 230000003647 oxidation Effects 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 239000000126 substance Substances 0.000 description 12
- 238000012360 testing method Methods 0.000 description 11
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 10
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 10
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 10
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 10
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 10
- 239000005642 Oleic acid Substances 0.000 description 10
- 235000011114 ammonium hydroxide Nutrition 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 230000007062 hydrolysis Effects 0.000 description 10
- 238000006460 hydrolysis reaction Methods 0.000 description 10
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 10
- 239000007788 liquid Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000002244 precipitate Substances 0.000 description 10
- 238000003756 stirring Methods 0.000 description 10
- 229910021642 ultra pure water Inorganic materials 0.000 description 10
- 239000012498 ultrapure water Substances 0.000 description 10
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 8
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000009466 transformation Effects 0.000 description 6
- 229910021577 Iron(II) chloride Inorganic materials 0.000 description 5
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 5
- 239000012901 Milli-Q water Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 238000006701 autoxidation reaction Methods 0.000 description 5
- 238000000975 co-precipitation Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000008187 granular material Substances 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 5
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- 239000002086 nanomaterial Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000003921 oil Substances 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 238000013102 re-test Methods 0.000 description 5
- 238000004064 recycling Methods 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 150000003376 silicon Chemical class 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000001117 sulphuric acid Substances 0.000 description 5
- 235000011149 sulphuric acid Nutrition 0.000 description 5
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 5
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The application relates to including that gas based on adsorbent stores and the gas cabinet assembly of induction system, including gas cabinet assembly body, described gas cabinet assembly body interior is provided with multiple gas cylinder, each described gas cylinder is connected by gas-distribution pipe, described gas cabinet assembly body be internally provided with first sensor and the second sensor, described first sensor and described second sensor are connected by electric wire, being supplied electricity consumption needed for described first sensor and the second sensor by the electric storage means being positioned at electric wire medium position, described electric storage means is internally provided with black silicon solar cell.
Description
Technical field
The application relates to power domain, particularly relates to include that gas based on adsorbent stores and the gas holder dress of induction system
Put.
Background technology
Along with economic fast development, people are more and more higher for the requirement of living environment.The environment especially lived is
No safe and reliable attention rate is more and more higher.Close on port city life or around have the resident of inspection center especially to worry
Gas leakage problem.
But there is techniques below problem in the gas cabinet assembly in correlation technique: general gas cabinet assembly is both provided with gas and passes
Sensor, and exhaust once self-powered in gas sensor, there is monitoring fault in it.
Summary of the invention
For overcoming problem present in correlation technique, the application provides and includes that gas based on adsorbent stores and delivery system
The gas cabinet assembly of system.
The invention provides and include that gas based on adsorbent stores and the gas cabinet assembly of induction system, it is characterised in that:
Including gas cabinet assembly body, described gas cabinet assembly body interior is provided with multiple gas cylinder, and each described gas cylinder passes through gas-distribution pipe phase
Connect, described gas cabinet assembly body be internally provided with first sensor and the second sensor, described first sensor and described
Second sensor is connected by electric wire, the electric storage means being positioned at electric wire medium position supply described first sensor and the second sensing
Electricity consumption needed for device, described electric storage means is internally provided with black silicon solar cell.
Preferably, the quantity of described first sensor and described second sensor is 1～2.
Preferably, the quantity of described first sensor is 2.
Preferably, the quantity of described second sensor is 2.
Preferably, described electric storage means is positioned at the tip position of gas cabinet assembly body, and is detachably arranged in open top
Position.
The technical scheme that embodiments herein provides can include following beneficial effect:
1. The embodiment provides and include that gas based on adsorbent stores and the gas cabinet assembly of induction system, by
Have employed, in this device, the power supply that black silicon solar cell operates as it, during preparing black silicon solar cell, use
Cu/Ni alloy film auxiliary chemical method etching prepares black silicon structure, uses the method to corrode at the silicon chip surface of pyramid structure
The nanostructured of appropriate depth, effectively the reflectance of reduction visible ray is to less than 1%, can effectively reduce answering of carrier simultaneously
Conjunction rate, uses SiO simultaneously2/Al2O3/SiNXThin film, as overlayer passivation film, effectively reduces the reflectance of sunlight, improves
The life-span of carrier.And then use the extinction efficiency of solaode that this black silicon structure makes to improve, make this gas cabinet assembly
Service life improves.
2. The embodiment provides and include that gas based on adsorbent stores and the gas cabinet assembly of induction system,
Its power supply used uses black silicon solar cell, owing to using SiO2/Al2O3/SiNXThin film, should as overlayer passivation film
Structural membrane is effectively increased the life-span of carrier, in combination with the use of buffer electrode layer, is effectively improved solaode
Efficiency, test obtains high solar battery conversion efficiency and reaches 20.78%.And then, make power supply extend service life, save
Change the man power and material cost needed for battery；Additionally, during preparing solaode, due to by Fe3O4 magnetic
Nanoparticle doped, in P3HT:PCBM photoactive layer, increases free carrier concentration, improves the short circuit current of battery, improves
The energy conversion efficiency of black silicon solar cell；Simple in construction, production technology is simple, low cost, therefore, is promoting battery conversion
Reduce manufacturing cost while efficiency, have and apply on a large scale generate the potentiality in reality.And then make the system of gas cabinet assembly
Make cost and service efficiency is all greatly enhanced.
3. The embodiment provides and include that gas based on adsorbent stores and the gas cabinet assembly of induction system, by
In using black silicon solar cell as the storage power supply driving motor, when there is the situations such as power-off, device also just is able to
Often operating, reduces the probability that device breaks down, saves maintenance cost and manually check the time, improve the operating of enterprise
Efficiency.
Aspect and advantage that the application adds will part be given in the following description, and part will become from the following description
Obtain substantially, or recognized by the practice of the application.It should be appreciated that above general description and details hereinafter only describe
It is exemplary and explanatory, the application can not be limited.
Accompanying drawing explanation
Accompanying drawing herein is merged in description and constitutes the part of this specification, it is shown that meet the enforcement of the present invention
Example, and for explaining the principle of the present invention together with description.
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the preparation technology of the black silicon solar cell module used according to the present invention shown in an exemplary embodiment
FB(flow block).
Fig. 3 is the silicon chip surface pyramid structure schematic diagram that the present invention uses.
Fig. 4 is the black silicon structure surface film schematic diagram that the present invention uses.
Detailed description of the invention
Here will illustrate exemplary embodiment in detail, its example represents in the accompanying drawings.Explained below relates to
During accompanying drawing, unless otherwise indicated, the same numbers in different accompanying drawings represents same or analogous key element.Following exemplary embodiment
Described in embodiment do not represent all embodiments consistent with the present invention.On the contrary, they are only with the most appended
The example of the apparatus and method that some aspects that described in detail in claims, the present invention are consistent.
In the description of the present application, it should be noted that unless otherwise prescribed and limit, term " is installed ", " being connected ",
" connect " and should be interpreted broadly, for example, it may be mechanically connected or electrical connection, it is also possible to be the connection of two element internals, can
Being to be joined directly together, it is also possible to be indirectly connected to by intermediary, for the ordinary skill in the art, can basis
Concrete condition understands the concrete meaning of above-mentioned term.
Along with worsening shortages and the environmental pollution of fossil energy increase the weight of, make full use of the renewable energy including solar energy
Source is increasingly paid close attention to by people.Industry solar cell production cost is higher at present, and constraining the universal of solar electrical energy generation should
With.Therefore to make solar cell can be used widely in the world, we must utilize new technology of preparing to improve
With the novel solar cell of research and development, reduce production cost further and improve photoelectric transformation efficiency.
Solar cell is device luminous energy being converted into electric energy, in the compounds solar cell of volume production, cadmium telluride
The conversion efficiency of solar cell is the highest, but the cadmium used in its raw material is harmful substance, is likely to result in environmental pollution after using, because of
This limits being widely used of such battery.Crystal silicon cell is the most most widely used and a kind of battery the most ripe, but
Being existing crystal silicon cell owing to structure is complicated, producting process difficulty is relatively big, high cost, is not applied to large-scale
In commercial production.Therefore, promote reduce while battery conversion efficiency manufacturing cost be only the key advancing photovoltaic application because of
Element.
High-efficiency and low-cost solar cell technology is the key factor of universal photovoltaic generation.The discovery of black silicon and black silion cell
The development of technology, the research and development for low-cost high-efficiency battery provide effective resolving ideas.Due to special nano surface knot
Structure makes the Carrier recombination of black silion cell be far above common monocrystalline silicon battery, thus causes current black silion cell efficiency not reach
Expection to people.
Research finds, is doped in P3HT:PCBM photoactive layer by Fe3O4 magnetic nano-particle, owing to Fe3O4 magnetic is received
Rice corpuscles has superparamagnetism, and the magnetic field produced under electromagnetic interaction improves triplet state in P3HT:PCBM photoactive layer
Ratio shared by exciton, produces more free carrier, makes free carrier concentration increase, and can improve the short circuit electricity of battery
Stream, and then improve the energy conversion efficiency of polymer solar battery.
Embodiment 1:
Fig. 1 is according to the gas holder including gas based on adsorbent storage and induction system shown in an exemplary embodiment
The structural representation of device, as it is shown in figure 1, include that gas based on adsorbent stores and the gas cabinet assembly of induction system, including
Gas cabinet assembly body 1, described gas cabinet assembly body 1 is internally provided with multiple gas cylinder 4,5,6,7, each described gas cylinder 4,5,6,7
Be connected by gas-distribution pipe, described gas cabinet assembly body 1 be internally provided with first sensor 3 and the second sensor 8, described
One sensor 3 and described second sensor 8 are connected by electric wire, the electric storage means 2 being positioned at electric wire medium position supply described
Electricity consumption needed for one sensor 3 and the second sensor 8, described electric storage means 2 is internally provided with black silicon solar cell.
Preferably, the quantity of described first sensor 3 and described second sensor 8 is 1～2.
Preferably, the quantity of described first sensor 3 is 2.
Preferably, the quantity of described second sensor 8 is 2.
Preferably, described electric storage means 2 is positioned at the tip position of gas cabinet assembly body, and is detachably arranged in open top
Position.
Preferably, described black silicon solar cell black silicon structure based on P-type silicon sheet, this black silicon structure is at silicon chip surface
The auxiliary chemical method etching preparation of Cu/Ni alloy film is utilized on the basis of pyramid structure；It is followed successively by expansion above described black silicon structure
Dissipate layer, photoactive layer, SiO2/Al2O3/SiNXOverlayer passivation film, buffer electrode layer and upper electrode；Described photoactive layer doped with
Fe3O4Magnetic nano-particle；Described black silicon structure is buffer electrode layer, bottom electrode in turn below；Described SiO2/Al2O3/SiNXFolded
The thickness about 70nm of layer passivating film.
As preferably, described black silicon solar cell is black silicon structure based on P-type silicon sheet as shown in Figure 3, this black silicon
Structure is to utilize the auxiliary chemical method etching preparation of Cu/Ni alloy film on the basis of silicon chip surface pyramid structure, in this enforcement
In example, this pyramid structure is to corrode to obtain in the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%.
Diffusion layer 01 as shown in Figure 4, photoactive layer 02, SiO it is followed successively by above described black silicon structure2/Al2O3/SiNXFolded
Layer passivating film 03, buffer electrode layer 04 and upper electrode 05；Described photoactive layer 02 is doped with Fe3O4Magnetic nano-particle；Described black
Silicon structure is buffer electrode layer, bottom electrode in turn below；Described SiO2/Al2O3/SiNXThe thickness of overlayer passivation film about 70nm.Its
In, described diffusion layer 01 is Doping Phosphorus Elements Diffusion source for using phosphorus oxychloride.
Fig. 2 is according to the gas holder including gas based on adsorbent storage and induction system shown in an exemplary embodiment
The preparation method of the black silicon solar cell assembly that device is used, referring to Fig. 2, comprises the following steps:
Step one, cleaning silicon chip: take certain size P-type silicon sheet, silicon chip is immersed in sulphuric acid: hydrogen peroxide=3:2 (volume
Than) mixed solution in and carry out supersound process 5min, silicon chip is immersed 15vol%HF solution, then use deionized water pair
Silicon chip rinses 2min, silicon chip is then placed in the HF solution of 0.5wt.% rinsing 1min, to remove silicon chip surface autoxidation
Layer, finally uses deionized water rinsing 2min；
Step 2, prepares pyramid structure: prepare the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%, will
Silicon chip is placed in mixed solution ultrasonic erosion 1h at 80 DEG C, obtains pyramid antireflection structure at silicon chip surface；
Step 3, prepares black silicon structure: be positioned in magnetic control sputtering device by silicon chip, be evacuated to 1.2 × 10-4Below Pa,
Magnetron sputtering C u target, Ni target simultaneously, power is respectively 140W, 120W, and magnetron sputtering C u target, Ni target time are 5min so that it is shape
Become Cu/Ni alloy film；Above-mentioned sputtering have the silicon chip of Cu/Ni alloy film be positioned over 2.7M H2O2 and the mixed solution of 8.3M HF
In, at 92 DEG C, corrode 100min, make silicon chip surface corrode and silicon nanostructure, the most black silicon structure, molten with hydrochloric acid after corroding
It is carried out by liquid, removes the Ni granule of residual, finally uses deionized water cleaning silicon chip；
Step 4, prepares black silicon solar cell:
1) silicon chip that will prepare, use phosphorus oxychloride liquid source diffuse to form diffusion layer, diffusion temperature be 800 DEG C～
1150℃；Use the plasma periphery etching of carbon tetrafluoride and oxygen, the diffusion layer at the edge of silicon chip is removed, makes upper and lower two
Face cuts off, and then utilizes low concentration hydrofluoric acid solution (3vol%) that Wafer Cleaning 30s is removed phosphorosilicate glass；
2) by the mass ratio of Fe3O4:P3HT:PCBM=0.018:1:0.8, Fe3O4 magnetic nano-particle is doped to light live
In property layer solution, doping content is 1%, is then placed in by silicon chip in above-mentioned photoactive layer solution, sonic oscillation 30min, at silicon
Sheet surface covers one layer of photoactive layer；
Wherein, Fe3O4 magnetic nano-particle uses the preparation of liquid phase coprecipitation method as follows: by 0.85g (3.1mmol)
FeCl3 6H2O Yu 0.3g (1.5mmol) FeCl2 4H2O, is dissolved under nitrogen protection in 200ml ultra-pure water and makes iron salt
Mixed solution；At 80 DEG C, vigorous magnetic stirs, and the Dilute Ammonia Solution that 2ml mass concentration is 25% is slowly added to iron salt and mixes
Closing in solution, when solution value is increased to 7～8, iron salt hydrolysis produces the Fe3O4 magnetic nano-particle of a large amount of black, continues to drip
Hydro-oxidation helium reacts 3h to pH=9, makes hydrolysis tend to complete；By black Fe3O4Magnetic nano-particle Magnet is from solution separating
Out, milli-Q water, be then dispersed in 200ml ultra-pure water, add 2ml mass concentration be 25% Dilute Ammonia Solution and
1ml oleic acid, stirs 1h in 80 DEG C of constant temperature vigorous magnetic.The most backward solution is slowly added to the concentrated hydrochloric acid that mass concentration is 36%,
Until flask produces lumpy precipitate, use ethanol purge 3 times again after being collected with Magnet by lumpy precipitate, remove unreacted oil
Acid, obtains the Fe of oleic acid modified3O4Magnetic nano-particle；
3) use high-temperature thermal oxidation method, the silicon chip of above-mentioned gained is loaded into high temperature oxidation furnace, in stove, is passed through oxygen, makes silicon
Sheet in oxidation atmosphere, the SiO that the most oxidized generation in surface 5～10nm is thick2, then this silicon chip is put into magnetic control sputtering device
In, utilize reaction magnetocontrol sputtering method to be first deposited with one layer of Al2O3Thin film, thickness about 40nm, then recycling PECVD deposition
One layer of silicon nitride so that it is form SiO2/Al2O3/SiNXOverlayer passivation film；
4) prepare buffer electrode layer: utilize radio frequency magnetron sputtering method, deposit one in silicon chip upper and lower surface respectively
Layer Cr film, thickness is 100nm, as the cushion of upper/lower electrode；
5) prepare electrode: the method using silk screen printing, make upper/lower electrode and the back of the body electricity of black silicon solar cell respectively
, finally black silicon solar cell is sintered, make electrode and silicon form good Ohmic contact, then connect a wire to up and down
Electrode.
Test result:
Black silion cell characteristic in AM1.5 standard analog light source irradiation condition:
Open-circuit voltage is 0.965V, and short circuit current is 58.36mA/cm2, fill factor, curve factor is 80.63%；Black silion cell is to too
The reflectance of sunlight is 0.84%.
QSSPC is used to measure the carrier lifetime of battery, when injecting carrier concentration △ n=1015cm-3Time, effective minority
Carrier lifetime is 10.9 μ s.
It is 20.78% that test obtains the solar energy conversion efficiency of this LED street lamp, the reflectance about 0.84% to sunlight,
Through 3000 retests, transformation efficiency variable quantity is less than 9%, and the conversion efficiency of this LED street lamp is high, reproducible.
Embodiment 2
Fig. 1 is according to the gas holder including gas based on adsorbent storage and induction system shown in an exemplary embodiment
The structural representation of device, as it is shown in figure 1, include that gas based on adsorbent stores and the gas cabinet assembly of induction system, including
Gas cabinet assembly body 1, described gas cabinet assembly body 1 is internally provided with multiple gas cylinder 4,5,6,7, each described gas cylinder 4,5,6,7
Be connected by gas-distribution pipe, described gas cabinet assembly body 1 be internally provided with first sensor 3 and the second sensor 8, described
One sensor 3 and described second sensor 8 are connected by electric wire, the electric storage means 2 being positioned at electric wire medium position supply described
Electricity consumption needed for one sensor 3 and the second sensor 8, described electric storage means 2 is internally provided with black silicon solar cell.
Preferably, the quantity of described first sensor 3 and described second sensor 8 is 1～2.
Preferably, the quantity of described first sensor 3 is 2.
Preferably, the quantity of described second sensor 8 is 2.
Preferably, described electric storage means 2 is positioned at the tip position of gas cabinet assembly body, and is detachably arranged in open top
Position.
Preferably, described black silicon solar cell black silicon structure based on P-type silicon sheet, this black silicon structure is at silicon chip surface
The auxiliary chemical method etching preparation of Cu/Ni alloy film is utilized on the basis of pyramid structure；It is followed successively by expansion above described black silicon structure
Dissipate layer, photoactive layer, SiO2/Al2O3/SiNXOverlayer passivation film, buffer electrode layer and upper electrode；Described photoactive layer doped with
Fe3O4Magnetic nano-particle；Described black silicon structure is buffer electrode layer, bottom electrode in turn below；Described SiO2/Al2O3/SiNXFolded
The thickness about 70nm of layer passivating film.
As preferably, described solaode is black silicon structure based on P-type silicon sheet as shown in Figure 3, this black silicon structure
Prepare for utilizing the auxiliary chemical method of Cu/Ni alloy film to etch on the basis of silicon chip surface pyramid structure, in the present embodiment,
This pyramid structure is to corrode to obtain in the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%.
Diffusion layer 01 as shown in Figure 4, photoactive layer 02, SiO it is followed successively by above described black silicon structure2/Al2O3/SiNXFolded
Layer passivating film 03, buffer electrode layer 04 and upper electrode 05；Described photoactive layer 02 is doped with Fe3O4Magnetic nano-particle；Described black
Silicon structure is buffer electrode layer, bottom electrode in turn below；Described SiO2/Al2O3/SiNXThe thickness of overlayer passivation film about 70nm.Its
In, described diffusion layer 01 is Doping Phosphorus Elements Diffusion source for using phosphorus oxychloride.
Fig. 2 is according to the gas holder including gas based on adsorbent storage and induction system shown in an exemplary embodiment
The preparation method of the black silicon solar cell assembly that device is used, referring to Fig. 2, comprises the following steps:
Step one, cleaning silicon chip: take certain size P-type silicon sheet, silicon chip is immersed in sulphuric acid: hydrogen peroxide=3:2 (volume
Than) mixed solution in and carry out supersound process 5min, silicon chip is immersed 15vol%HF solution, then use deionized water pair
Silicon chip rinses 2min, silicon chip is then placed in the HF solution of 0.5wt.% rinsing 1min, to remove silicon chip surface autoxidation
Layer, finally uses deionized water rinsing 2min；
Step 2, prepares pyramid structure: prepare the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%, will
Silicon chip is placed in mixed solution ultrasonic erosion 1h at 80 DEG C, obtains pyramid antireflection structure at silicon chip surface；
Step 3, prepares black silicon structure: be positioned in magnetic control sputtering device by silicon chip, be evacuated to 1.2 × 10-4Below Pa,
Magnetron sputtering C u target, Ni target simultaneously, power is respectively 140W, 120W, and magnetron sputtering C u target, Ni target time are 5min so that it is shape
Become Cu/Ni alloy film；Above-mentioned sputtering have the silicon chip of Cu/Ni alloy film be positioned over 2.7M H2O2 and the mixed solution of 8.3M HF
In, at 92 DEG C, corrode 100min, make silicon chip surface corrode and silicon nanostructure, the most black silicon structure, molten with hydrochloric acid after corroding
It is carried out by liquid, removes the Ni granule of residual, finally uses deionized water cleaning silicon chip；
Step 4, prepares black silicon solar cell:
1) silicon chip that will prepare, use phosphorus oxychloride liquid source diffuse to form diffusion layer, diffusion temperature be 800 DEG C～
1150℃；Use the plasma periphery etching of carbon tetrafluoride and oxygen, the diffusion layer at the edge of silicon chip is removed, makes upper and lower two
Face cuts off, and then utilizes low concentration hydrofluoric acid solution (3vol%) that Wafer Cleaning 30s is removed phosphorosilicate glass；
2) by the mass ratio of Fe3O4:P3HT:PCBM=0.018:1:0.8, Fe3O4 magnetic nano-particle is doped to light live
In property layer solution, doping content is 1%, is then placed in by silicon chip in above-mentioned photoactive layer solution, sonic oscillation 30min, at silicon
Sheet surface covers one layer of photoactive layer；
Wherein, Fe3O4 magnetic nano-particle uses the preparation of liquid phase coprecipitation method as follows: by 0.85g (3.1mmol)
FeCl3 6H2O Yu 0.3g (1.5mmol) FeCl2 4H2O, is dissolved under nitrogen protection in 200ml ultra-pure water and makes iron salt
Mixed solution；At 80 DEG C, vigorous magnetic stirs, and the Dilute Ammonia Solution that 2ml mass concentration is 25% is slowly added to iron salt and mixes
Closing in solution, when solution value is increased to 7～8, iron salt hydrolysis produces the Fe3O4 magnetic nano-particle of a large amount of black, continues to drip
Hydro-oxidation helium reacts 3h to pH=9, makes hydrolysis tend to complete；By black Fe3O4Magnetic nano-particle Magnet is from solution separating
Out, milli-Q water, be then dispersed in 200ml ultra-pure water, add 2ml mass concentration be 25% Dilute Ammonia Solution and
1ml oleic acid, stirs 1h in 80 DEG C of constant temperature vigorous magnetic.The most backward solution is slowly added to the concentrated hydrochloric acid that mass concentration is 36%,
Until flask produces lumpy precipitate, use ethanol purge 3 times again after being collected with Magnet by lumpy precipitate, remove unreacted oil
Acid, obtains the Fe of oleic acid modified3O4Magnetic nano-particle；
3) use high-temperature thermal oxidation method, the silicon chip of above-mentioned gained is loaded into high temperature oxidation furnace, in stove, is passed through oxygen, makes silicon
Sheet in oxidation atmosphere, the SiO that the most oxidized generation in surface 5～10nm is thick2, then this silicon chip is put into magnetic control sputtering device
In, utilize reaction magnetocontrol sputtering method to be first deposited with one layer of Al2O3Thin film, thickness about 40nm, then recycling PECVD deposition
One layer of silicon nitride so that it is form SiO2/Al2O3/SiNXOverlayer passivation film；
4) prepare buffer electrode layer: utilize radio frequency magnetron sputtering method, deposit one in silicon chip upper and lower surface respectively
Layer Cr film, thickness is 100nm, as the cushion of upper/lower electrode；
5) prepare electrode: the method using silk screen printing, make upper/lower electrode and the back of the body electricity of black silicon solar cell respectively
, finally black silicon solar cell is sintered, make electrode and silicon form good Ohmic contact, then connect a wire to up and down
Electrode.
Test result:
Black silion cell characteristic in AM1.5 standard analog light source irradiation condition:
Short circuit current is 58.36mA/cm2, fill factor, curve factor is 80.63%；Black silion cell reflectance is 1.5%.Use
QSSPC measures the carrier lifetime of battery, when injecting carrier concentration △ n=1015cm-3Time, effective minority carrier lifetime is
10.9μs。
It is 21.78% that test obtains the solar energy conversion efficiency of this LED street lamp, the reflectance about 1.5% to sunlight, warp
Crossing 3000 retests, transformation efficiency variable quantity is less than 10%, and the conversion efficiency of this LED street lamp is high, reproducible.
Embodiment 3
Fig. 1 is according to the gas holder including gas based on adsorbent storage and induction system shown in an exemplary embodiment
The structural representation of device, as it is shown in figure 1, include that gas based on adsorbent stores and the gas cabinet assembly of induction system, including
Gas cabinet assembly body 1, described gas cabinet assembly body 1 is internally provided with multiple gas cylinder 4,5,6,7, each described gas cylinder 4,5,6,7
Be connected by gas-distribution pipe, described gas cabinet assembly body 1 be internally provided with first sensor 3 and the second sensor 8, described
One sensor 3 and described second sensor 8 are connected by electric wire, the electric storage means 2 being positioned at electric wire medium position supply described
Electricity consumption needed for one sensor 3 and the second sensor 8, described electric storage means 2 is internally provided with black silicon solar cell.
Preferably, the quantity of described first sensor 3 and described second sensor 8 is 1～2.
Preferably, the quantity of described first sensor 3 is 2.
Preferably, the quantity of described second sensor 8 is 2.
Preferably, described electric storage means 2 is positioned at the tip position of gas cabinet assembly body, and is detachably arranged in open top
Position.
Preferably, described black silicon solar cell black silicon structure based on P-type silicon sheet, this black silicon structure is at silicon chip surface
The auxiliary chemical method etching preparation of Cu/Ni alloy film is utilized on the basis of pyramid structure；It is followed successively by expansion above described black silicon structure
Dissipate layer, photoactive layer, SiO2/Al2O3/SiNXOverlayer passivation film, buffer electrode layer and upper electrode；Described photoactive layer doped with
Fe3O4Magnetic nano-particle；Described black silicon structure is buffer electrode layer, bottom electrode in turn below；Described SiO2/Al2O3/SiNXFolded
The thickness about 70nm of layer passivating film.
As preferably, described black silicon solar cell is black silicon structure based on P-type silicon sheet as shown in Figure 3, this black silicon
Structure is to utilize the auxiliary chemical method etching preparation of Cu/Ni alloy film on the basis of silicon chip surface pyramid structure, in this enforcement
In example, this pyramid structure is to corrode to obtain in the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%.
Diffusion layer 01 as shown in Figure 4, photoactive layer 02, SiO it is followed successively by above described black silicon structure2/Al2O3/SiNXFolded
Layer passivating film 03, buffer electrode layer 04 and upper electrode 05；Described photoactive layer 02 is doped with Fe3O4Magnetic nano-particle；Described black
Silicon structure is buffer electrode layer, bottom electrode in turn below；Described SiO2/Al2O3/SiNXThe thickness of overlayer passivation film about 70nm.Its
In, described diffusion layer 01 is Doping Phosphorus Elements Diffusion source for using phosphorus oxychloride.
Fig. 2 is according to the gas holder including gas based on adsorbent storage and induction system shown in an exemplary embodiment
The preparation method of the black silicon solar cell assembly that device is used, referring to Fig. 2, comprises the following steps:
Step one, cleaning silicon chip: take certain size P-type silicon sheet, silicon chip is immersed in sulphuric acid: hydrogen peroxide=3:2 (volume
Than) mixed solution in and carry out supersound process 5min, silicon chip is immersed 15vol%HF solution, then use deionized water pair
Silicon chip rinses 2min, silicon chip is then placed in the HF solution of 0.5wt.% rinsing 1min, to remove silicon chip surface autoxidation
Layer, finally uses deionized water rinsing 2min；
Step 2, prepares pyramid structure: prepare the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%, will
Silicon chip is placed in mixed solution ultrasonic erosion 1h at 80 DEG C, obtains pyramid antireflection structure at silicon chip surface；
Step 3, prepares black silicon structure: be positioned in magnetic control sputtering device by silicon chip, be evacuated to 1.2 × 10-4Below Pa,
Magnetron sputtering C u target, Ni target simultaneously, power is respectively 140W, 120W, and magnetron sputtering C u target, Ni target time are 5min so that it is shape
Become Cu/Ni alloy film；Above-mentioned sputtering have the silicon chip of Cu/Ni alloy film be positioned over 2.7M H2O2 and the mixed solution of 8.3M HF
In, at 92 DEG C, corrode 100min, make silicon chip surface corrode and silicon nanostructure, the most black silicon structure, molten with hydrochloric acid after corroding
It is carried out by liquid, removes the Ni granule of residual, finally uses deionized water cleaning silicon chip；
Step 4, prepares black silicon solar cell:
1) silicon chip that will prepare, use phosphorus oxychloride liquid source diffuse to form diffusion layer, diffusion temperature be 800 DEG C～
1150℃；Use the plasma periphery etching of carbon tetrafluoride and oxygen, the diffusion layer at the edge of silicon chip is removed, makes upper and lower two
Face cuts off, and then utilizes low concentration hydrofluoric acid solution (3vol%) that Wafer Cleaning 30s is removed phosphorosilicate glass；
2) by the mass ratio of Fe3O4:P3HT:PCBM=0.018:1:0.8, Fe3O4 magnetic nano-particle is doped to light live
In property layer solution, doping content is 1%, is then placed in by silicon chip in above-mentioned photoactive layer solution, sonic oscillation 30min, at silicon
Sheet surface covers one layer of photoactive layer；
Wherein, Fe3O4 magnetic nano-particle uses the preparation of liquid phase coprecipitation method as follows: by 0.85g (3.1mmol)
FeCl3 6H2O Yu 0.3g (1.5mmol) FeCl2 4H2O, is dissolved under nitrogen protection in 200ml ultra-pure water and makes iron salt
Mixed solution；At 80 DEG C, vigorous magnetic stirs, and the Dilute Ammonia Solution that 2ml mass concentration is 25% is slowly added to iron salt and mixes
Closing in solution, when solution value is increased to 7～8, iron salt hydrolysis produces the Fe3O4 magnetic nano-particle of a large amount of black, continues to drip
Hydro-oxidation helium reacts 3h to pH=9, makes hydrolysis tend to complete；By black Fe3O4Magnetic nano-particle Magnet is from solution separating
Out, milli-Q water, be then dispersed in 200ml ultra-pure water, add 2ml mass concentration be 25% Dilute Ammonia Solution and
1ml oleic acid, stirs 1h in 80 DEG C of constant temperature vigorous magnetic.The most backward solution is slowly added to the concentrated hydrochloric acid that mass concentration is 36%,
Until flask produces lumpy precipitate, use ethanol purge 3 times again after being collected with Magnet by lumpy precipitate, remove unreacted oil
Acid, obtains the Fe of oleic acid modified3O4Magnetic nano-particle；
3) use high-temperature thermal oxidation method, the silicon chip of above-mentioned gained is loaded into high temperature oxidation furnace, in stove, is passed through oxygen, makes silicon
Sheet in oxidation atmosphere, the SiO that the most oxidized generation in surface 5～10nm is thick2, then this silicon chip is put into magnetic control sputtering device
In, utilize reaction magnetocontrol sputtering method to be first deposited with one layer of Al2O3Thin film, thickness about 40nm, then recycling PECVD deposition
One layer of silicon nitride so that it is form SiO2/Al2O3/SiNXOverlayer passivation film；
4) prepare buffer electrode layer: utilize radio frequency magnetron sputtering method, deposit one in silicon chip upper and lower surface respectively
Layer Cr film, thickness is 100nm, as the cushion of upper/lower electrode；
5) prepare electrode: the method using silk screen printing, make upper/lower electrode and the back of the body electricity of black silicon solar cell respectively
, finally black silicon solar cell is sintered, make electrode and silicon form good Ohmic contact, then connect a wire to up and down
Electrode.
Test result:
Black silion cell characteristic in AM1.5 standard analog light source irradiation condition:
Open-circuit voltage is 0.965V, and short circuit current is 58.36mA/cm2, fill factor, curve factor is 80.63%；Black silion cell reflects
Rate is 1.32%.QSSPC is used to measure the carrier lifetime of battery, when injecting carrier concentration △ n=1015cm-3Time, effectively
Minority carrier lifetime is 10.9 μ s.
It is 22.78% that test obtains the solar energy conversion efficiency of this LED street lamp, the reflectance about 1.32% to sunlight,
Through 3000 retests, transformation efficiency variable quantity is less than 11%, and the conversion efficiency of this LED street lamp is high, reproducible.
Embodiment 4
Fig. 1 is according to the gas holder including gas based on adsorbent storage and induction system shown in an exemplary embodiment
The structural representation of device, as it is shown in figure 1, include that gas based on adsorbent stores and the gas cabinet assembly of induction system, including
Gas cabinet assembly body 1, described gas cabinet assembly body 1 is internally provided with multiple gas cylinder 4,5,6,7, each described gas cylinder 4,5,6,7
Be connected by gas-distribution pipe, described gas cabinet assembly body 1 be internally provided with first sensor 3 and the second sensor 8, described
One sensor 3 and described second sensor 8 are connected by electric wire, the electric storage means 2 being positioned at electric wire medium position supply described
Electricity consumption needed for one sensor 3 and the second sensor 8, described electric storage means 2 is internally provided with black silicon solar cell.
Preferably, the quantity of described first sensor 3 and described second sensor 8 is 1～2.
Preferably, the quantity of described first sensor 3 is 2.
Preferably, the quantity of described second sensor 8 is 2.
Preferably, described electric storage means 2 is positioned at the tip position of gas cabinet assembly body, and is detachably arranged in open top
Position.
Preferably, described black silicon solar cell black silicon structure based on P-type silicon sheet, this black silicon structure is at silicon chip surface
The auxiliary chemical method etching preparation of Cu/Ni alloy film is utilized on the basis of pyramid structure；It is followed successively by expansion above described black silicon structure
Dissipate layer, photoactive layer, SiO2/Al2O3/SiNXOverlayer passivation film, buffer electrode layer and upper electrode；Described photoactive layer doped with
Fe3O4Magnetic nano-particle；Described black silicon structure is buffer electrode layer, bottom electrode in turn below；Described SiO2/Al2O3/SiNXFolded
The thickness about 70nm of layer passivating film.
As preferably, described black silicon solar cell is black silicon structure based on P-type silicon sheet as shown in Figure 3, this black silicon
Structure is to utilize the auxiliary chemical method etching preparation of Cu/Ni alloy film on the basis of silicon chip surface pyramid structure, in this enforcement
In example, this pyramid structure is to corrode to obtain in the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%.
Diffusion layer 01 as shown in Figure 4, photoactive layer 02, SiO it is followed successively by above described black silicon structure2/Al2O3/SiNXFolded
Layer passivating film 03, buffer electrode layer 04 and upper electrode 05；Described photoactive layer 02 is doped with Fe3O4Magnetic nano-particle；Described black
Silicon structure is buffer electrode layer, bottom electrode in turn below；Described SiO2/Al2O3/SiNXThe thickness of overlayer passivation film about 70nm.Its
In, described diffusion layer 01 is Doping Phosphorus Elements Diffusion source for using phosphorus oxychloride.
Fig. 2 is according to the gas holder including gas based on adsorbent storage and induction system shown in an exemplary embodiment
The preparation method of the black silicon solar cell assembly that device is used, referring to Fig. 2, comprises the following steps:
Step one, cleaning silicon chip: take certain size P-type silicon sheet, silicon chip is immersed in sulphuric acid: hydrogen peroxide=3:2 (volume
Than) mixed solution in and carry out supersound process 5min, silicon chip is immersed 15vol%HF solution, then use deionized water pair
Silicon chip rinses 2min, silicon chip is then placed in the HF solution of 0.5wt.% rinsing 1min, to remove silicon chip surface autoxidation
Layer, finally uses deionized water rinsing 2min；
Step 2, prepares pyramid structure: prepare the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%, will
Silicon chip is placed in mixed solution ultrasonic erosion 1h at 80 DEG C, obtains pyramid antireflection structure at silicon chip surface；
Step 3, prepares black silicon structure: be positioned in magnetic control sputtering device by silicon chip, be evacuated to 1.2 × 10-4Below Pa,
Magnetron sputtering C u target, Ni target simultaneously, power is respectively 140W, 120W, and magnetron sputtering C u target, Ni target time are 5min so that it is shape
Become Cu/Ni alloy film；Above-mentioned sputtering have the silicon chip of Cu/Ni alloy film be positioned over 2.7M H2O2 and the mixed solution of 8.3M HF
In, at 92 DEG C, corrode 100min, make silicon chip surface corrode and silicon nanostructure, the most black silicon structure, molten with hydrochloric acid after corroding
It is carried out by liquid, removes the Ni granule of residual, finally uses deionized water cleaning silicon chip；
Step 4, prepares black silicon solar cell:
1) silicon chip that will prepare, use phosphorus oxychloride liquid source diffuse to form diffusion layer, diffusion temperature be 800 DEG C～
1150℃；Use the plasma periphery etching of carbon tetrafluoride and oxygen, the diffusion layer at the edge of silicon chip is removed, makes upper and lower two
Face cuts off, and then utilizes low concentration hydrofluoric acid solution (3vol%) that Wafer Cleaning 30s is removed phosphorosilicate glass；
2) by the mass ratio of Fe3O4:P3HT:PCBM=0.018:1:0.8, Fe3O4 magnetic nano-particle is doped to light live
In property layer solution, doping content is 1%, is then placed in by silicon chip in above-mentioned photoactive layer solution, sonic oscillation 30min, at silicon
Sheet surface covers one layer of photoactive layer；
Wherein, Fe3O4 magnetic nano-particle uses the preparation of liquid phase coprecipitation method as follows: by 0.85g (3.1mmol)
FeCl3 6H2O Yu 0.3g (1.5mmol) FeCl2 4H2O, is dissolved under nitrogen protection in 200ml ultra-pure water and makes iron salt
Mixed solution；At 80 DEG C, vigorous magnetic stirs, and the Dilute Ammonia Solution that 2ml mass concentration is 25% is slowly added to iron salt and mixes
Closing in solution, when solution value is increased to 7～8, iron salt hydrolysis produces the Fe3O4 magnetic nano-particle of a large amount of black, continues to drip
Hydro-oxidation helium reacts 3h to pH=9, makes hydrolysis tend to complete；By black Fe3O4Magnetic nano-particle Magnet is from solution separating
Out, milli-Q water, be then dispersed in 200ml ultra-pure water, add 2ml mass concentration be 25% Dilute Ammonia Solution and
1ml oleic acid, stirs 1h in 80 DEG C of constant temperature vigorous magnetic.The most backward solution is slowly added to the concentrated hydrochloric acid that mass concentration is 36%,
Until flask produces lumpy precipitate, use ethanol purge 3 times again after being collected with Magnet by lumpy precipitate, remove unreacted oil
Acid, obtains the Fe of oleic acid modified3O4Magnetic nano-particle；
3) use high-temperature thermal oxidation method, the silicon chip of above-mentioned gained is loaded into high temperature oxidation furnace, in stove, is passed through oxygen, makes silicon
Sheet in oxidation atmosphere, the SiO that the most oxidized generation in surface 5～10nm is thick2, then this silicon chip is put into magnetic control sputtering device
In, utilize reaction magnetocontrol sputtering method to be first deposited with one layer of Al2O3Thin film, thickness about 40nm, then recycling PECVD deposition
One layer of silicon nitride so that it is form SiO2/Al2O3/SiNXOverlayer passivation film；
4) prepare buffer electrode layer: utilize radio frequency magnetron sputtering method, deposit one in silicon chip upper and lower surface respectively
Layer Cr film, thickness is 100nm, as the cushion of upper/lower electrode；
5) prepare electrode: the method using silk screen printing, make upper/lower electrode and the back of the body electricity of black silicon solar cell respectively
, finally black silicon solar cell is sintered, make electrode and silicon form good Ohmic contact, then connect a wire to up and down
Electrode.
Test result:
Black silion cell characteristic in AM1.5 standard analog light source irradiation condition:
Open-circuit voltage is 0.965V, and short circuit current is 58.36mA/cm2, fill factor, curve factor is 80.63%；Black silion cell reflects
Rate is 1.26%.QSSPC is used to measure the carrier lifetime of battery, when injecting carrier concentration △ n=1015cm-3Time, effectively
Minority carrier lifetime is 10.9 μ s.
It is 20.69% that test obtains the solar energy conversion efficiency of this LED street lamp, the reflectance about 1.26% to sunlight,
Through 3000 retests, transformation efficiency variable quantity is less than 12%, and the conversion efficiency of this LED street lamp is high, reproducible.
Embodiment 5
Fig. 1 is according to the gas holder including gas based on adsorbent storage and induction system shown in an exemplary embodiment
The structural representation of device, as it is shown in figure 1, include that gas based on adsorbent stores and the gas cabinet assembly of induction system, including
Gas cabinet assembly body 1, described gas cabinet assembly body 1 is internally provided with multiple gas cylinder 4,5,6,7, each described gas cylinder 4,5,6,7
Be connected by gas-distribution pipe, described gas cabinet assembly body 1 be internally provided with first sensor 3 and the second sensor 8, described
One sensor 3 and described second sensor 8 are connected by electric wire, the electric storage means 2 being positioned at electric wire medium position supply described
Electricity consumption needed for one sensor 3 and the second sensor 8, described electric storage means 2 is internally provided with black silicon solar cell.
Preferably, the quantity of described first sensor 3 and described second sensor 8 is 1～2.
Preferably, the quantity of described first sensor 3 is 2.
Preferably, the quantity of described second sensor 8 is 2.
Preferably, described electric storage means 2 is positioned at the tip position of gas cabinet assembly body, and is detachably arranged in open top
Position.
Preferably, described black silicon solar cell black silicon structure based on P-type silicon sheet, this black silicon structure is at silicon chip surface
The auxiliary chemical method etching preparation of Cu/Ni alloy film is utilized on the basis of pyramid structure；It is followed successively by expansion above described black silicon structure
Dissipate layer, photoactive layer, SiO2/Al2O3/SiNXOverlayer passivation film, buffer electrode layer and upper electrode；Described photoactive layer doped with
Fe3O4Magnetic nano-particle；Described black silicon structure is buffer electrode layer, bottom electrode in turn below；Described SiO2/Al2O3/SiNXFolded
The thickness about 70nm of layer passivating film.
As preferably, described black silicon solar cell is black silicon structure based on P-type silicon sheet as shown in Figure 3, this black silicon
Structure is to utilize the auxiliary chemical method etching preparation of Cu/Ni alloy film on the basis of silicon chip surface pyramid structure, in this enforcement
In example, this pyramid structure is to corrode to obtain in the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%.
Diffusion layer 01 as shown in Figure 4, photoactive layer 02, SiO it is followed successively by above described black silicon structure2/Al2O3/SiNXFolded
Layer passivating film 03, buffer electrode layer 04 and upper electrode 05；Described photoactive layer 02 is doped with Fe3O4Magnetic nano-particle；Described black
Silicon structure is buffer electrode layer, bottom electrode in turn below；Described SiO2/Al2O3/SiNXThe thickness of overlayer passivation film about 70nm.Its
In, described diffusion layer 01 is Doping Phosphorus Elements Diffusion source for using phosphorus oxychloride.
Fig. 2 is according to the gas holder including gas based on adsorbent storage and induction system shown in an exemplary embodiment
The preparation method of the black silicon solar cell assembly that device is used, referring to Fig. 2, comprises the following steps:
Step one, cleaning silicon chip: take certain size P-type silicon sheet, silicon chip is immersed in sulphuric acid: hydrogen peroxide=3:2 (volume
Than) mixed solution in and carry out supersound process 5min, silicon chip is immersed 15vol%HF solution, then use deionized water pair
Silicon chip rinses 2min, silicon chip is then placed in the HF solution of 0.5wt.% rinsing 1min, to remove silicon chip surface autoxidation
Layer, finally uses deionized water rinsing 2min；
Step 2, prepares pyramid structure: prepare the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%, will
Silicon chip is placed in mixed solution ultrasonic erosion 1h at 80 DEG C, obtains pyramid antireflection structure at silicon chip surface；
Step 3, prepares black silicon structure: be positioned in magnetic control sputtering device by silicon chip, be evacuated to 1.2 × 10-4Below Pa,
Magnetron sputtering C u target, Ni target simultaneously, power is respectively 140W, 120W, and magnetron sputtering C u target, Ni target time are 5min so that it is shape
Become Cu/Ni alloy film；Above-mentioned sputtering have the silicon chip of Cu/Ni alloy film be positioned over 2.7M H2O2 and the mixed solution of 8.3M HF
In, at 92 DEG C, corrode 100min, make silicon chip surface corrode and silicon nanostructure, the most black silicon structure, molten with hydrochloric acid after corroding
It is carried out by liquid, removes the Ni granule of residual, finally uses deionized water cleaning silicon chip；
Step 4, prepares black silicon solar cell:
1) silicon chip that will prepare, use phosphorus oxychloride liquid source diffuse to form diffusion layer, diffusion temperature be 800 DEG C～
1150℃；Use the plasma periphery etching of carbon tetrafluoride and oxygen, the diffusion layer at the edge of silicon chip is removed, makes upper and lower two
Face cuts off, and then utilizes low concentration hydrofluoric acid solution (3vol%) that Wafer Cleaning 30s is removed phosphorosilicate glass；
2) by the mass ratio of Fe3O4:P3HT:PCBM=0.018:1:0.8, Fe3O4 magnetic nano-particle is doped to light live
In property layer solution, doping content is 1%, is then placed in by silicon chip in above-mentioned photoactive layer solution, sonic oscillation 30min, at silicon
Sheet surface covers one layer of photoactive layer；
Wherein, Fe3O4 magnetic nano-particle uses the preparation of liquid phase coprecipitation method as follows: by 0.85g (3.1mmol)
FeCl3 6H2O Yu 0.3g (1.5mmol) FeCl2 4H2O, is dissolved under nitrogen protection in 200ml ultra-pure water and makes iron salt
Mixed solution；At 80 DEG C, vigorous magnetic stirs, and the Dilute Ammonia Solution that 2ml mass concentration is 25% is slowly added to iron salt and mixes
Closing in solution, when solution value is increased to 7～8, iron salt hydrolysis produces the Fe3O4 magnetic nano-particle of a large amount of black, continues to drip
Hydro-oxidation helium reacts 3h to pH=9, makes hydrolysis tend to complete；By black Fe3O4Magnetic nano-particle Magnet is from solution separating
Out, milli-Q water, be then dispersed in 200ml ultra-pure water, add 2ml mass concentration be 25% Dilute Ammonia Solution and
1ml oleic acid, stirs 1h in 80 DEG C of constant temperature vigorous magnetic.The most backward solution is slowly added to the concentrated hydrochloric acid that mass concentration is 36%,
Until flask produces lumpy precipitate, use ethanol purge 3 times again after being collected with Magnet by lumpy precipitate, remove unreacted oil
Acid, obtains the Fe of oleic acid modified3O4Magnetic nano-particle；
3) use high-temperature thermal oxidation method, the silicon chip of above-mentioned gained is loaded into high temperature oxidation furnace, in stove, is passed through oxygen, makes silicon
Sheet in oxidation atmosphere, the SiO that the most oxidized generation in surface 5～10nm is thick2, then this silicon chip is put into magnetic control sputtering device
In, utilize reaction magnetocontrol sputtering method to be first deposited with one layer of Al2O3Thin film, thickness about 40nm, then recycling PECVD deposition
One layer of silicon nitride so that it is form SiO2/Al2O3/SiNXOverlayer passivation film；
4) prepare buffer electrode layer: utilize radio frequency magnetron sputtering method, deposit one in silicon chip upper and lower surface respectively
Layer Cr film, thickness is 100nm, as the cushion of upper/lower electrode；
5) prepare electrode: the method using silk screen printing, make upper/lower electrode and the back of the body electricity of black silicon solar cell respectively
, finally black silicon solar cell is sintered, make electrode and silicon form good Ohmic contact, then connect a wire to up and down
Electrode.
Test result:
Black silion cell characteristic in AM1.5 standard analog light source irradiation condition:
Open-circuit voltage is 0.965V, and short circuit current is 58.36mA/cm2, fill factor, curve factor is 80.63%；Black silion cell reflects
Rate is 2.1%.QSSPC is used to measure the carrier lifetime of battery, when injecting carrier concentration △ n=1015cm-3Time, the fewest
Number carrier lifetime is 10.9 μ s.
It is 26.58% that test obtains the solar energy conversion efficiency of this LED street lamp, the reflectance about 2.1% to sunlight, warp
Crossing 3000 retests, transformation efficiency variable quantity is less than 14%, and the conversion efficiency of this LED street lamp is high, reproducible.
About the device in above-described embodiment, wherein modules performs the concrete mode of operation in relevant the method
Embodiment in be described in detail, explanation will be not set forth in detail herein.
Those skilled in the art, after considering description and putting into practice invention disclosed herein, will readily occur to its of the present invention
Its embodiment.The application is intended to any modification, purposes or the adaptations of the present invention, these modification, purposes or
Person's adaptations is followed the general principle of the present invention and includes the undocumented common knowledge in the art of the application
Or conventional techniques means.Description and embodiments is considered only as exemplary, and true scope and spirit of the invention are by following
Claim is pointed out.
It should be appreciated that the invention is not limited in precision architecture described above and illustrated in the accompanying drawings, and
And various modifications and changes can carried out without departing from the scope.The scope of the present invention is only limited by appended claim.
Claims (5)
1. include that gas based on adsorbent stores and the gas cabinet assembly of induction system, it is characterised in that: include that gas cabinet assembly is originally
Body, described gas cabinet assembly body interior is provided with multiple gas cylinder, and each described gas cylinder is connected by gas-distribution pipe, and described gas holder fills
That puts body is internally provided with first sensor and the second sensor, described first sensor and described second sensor by electricity
Line connects, the electric storage means being positioned at electric wire medium position supply electricity consumption needed for described first sensor and the second sensor, described
Electric storage means is internally provided with black silicon solar cell.
The gas cabinet assembly including gas based on adsorbent storage and induction system the most according to claim 1, its feature
It is: the quantity of described first sensor and described second sensor is 1～2.
The gas cabinet assembly including gas based on adsorbent storage and induction system the most according to claim 2, its feature
It is: the quantity of described first sensor is 2.
The gas cabinet assembly including gas based on adsorbent storage and induction system the most according to claim 2, its feature
It is: the quantity of described second sensor is 2.
The gas cabinet assembly including gas based on adsorbent storage and induction system the most according to claim 1, its feature
It is: described electric storage means is positioned at the tip position of gas cabinet assembly body, and is detachably arranged in open top position.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109458556A (en) * | 2018-12-26 | 2019-03-12 | 南京信创电子设备有限公司 | A kind of intelligent portable special gas safe transport cabinet |
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| US20020078824A1 (en) * | 1998-03-27 | 2002-06-27 | Tom Glenn M. | Gas cabinet assembly comprising sorbent-based gas storage and delivery system |
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| CN204187644U (en) * | 2014-09-10 | 2015-03-04 | 北京和顺万佳科技有限公司 | A kind of soot blower distributing cabinet |
| CN204647848U (en) * | 2015-04-23 | 2015-09-16 | 上海盛韬半导体科技有限公司 | A kind of automatic type special gas distributor case |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20020078824A1 (en) * | 1998-03-27 | 2002-06-27 | Tom Glenn M. | Gas cabinet assembly comprising sorbent-based gas storage and delivery system |
| CN101776542A (en) * | 2009-01-11 | 2010-07-14 | 中国科学院寒区旱区环境与工程研究所 | Soil-plant system gas exchange continuous measurement acquisition device |
| CN204187644U (en) * | 2014-09-10 | 2015-03-04 | 北京和顺万佳科技有限公司 | A kind of soot blower distributing cabinet |
| CN204647848U (en) * | 2015-04-23 | 2015-09-16 | 上海盛韬半导体科技有限公司 | A kind of automatic type special gas distributor case |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109458556A (en) * | 2018-12-26 | 2019-03-12 | 南京信创电子设备有限公司 | A kind of intelligent portable special gas safe transport cabinet |
| CN109458556B (en) * | 2018-12-26 | 2024-03-26 | 南京信创电子设备有限公司 | Intelligent portable special gas safety conveying cabinet |
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Effective date of registration: 20181227 Address after: 300000 meters south of Houjiaying Town, Jizhou District, Tianjin Patentee after: Tianjin Baoju Purification Equipment Producing Co., Ltd. Address before: 362600 Guangshan Village 182, Yidu Town, Yongchun County, Quanzhou City, Fujian Province Patentee before: Li Guangyi |