CN106069239A - A kind of self energizing power saws for landscape engineering - Google Patents
A kind of self energizing power saws for landscape engineering Download PDFInfo
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- CN106069239A CN106069239A CN201610547715.8A CN201610547715A CN106069239A CN 106069239 A CN106069239 A CN 106069239A CN 201610547715 A CN201610547715 A CN 201610547715A CN 106069239 A CN106069239 A CN 106069239A
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- A—HUMAN NECESSITIES
- A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
- A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
- A01G3/00—Cutting implements specially adapted for horticultural purposes; Delimbing standing trees
- A01G3/08—Other tools for pruning, branching or delimbing standing trees
- A01G3/085—Motor-driven saws for pruning or branching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
- Y02P60/12—Technologies relating to agriculture, livestock or agroalimentary industries using renewable energies, e.g. solar water pumping
Abstract
The application relates to a kind of self energizing power saws for landscape engineering, including electric saw bar and the saw blade of tubulose；Electric saw bar includes motor and solar components, motor is arranged at the middle position of electric saw bar, and solar components is arranged at the side of electric saw bar, by being wired to motor, the other end of motor connects switch, and switch is arranged at the end free end of electric saw bar.This power saws reaches efficiently to utilize the purpose of solar energy, reduces energy resource consumption, and cost of manufacture is low, has great application prospect.
Description
Technical field
The application relates to afforestation field, particularly relates to a kind of self energizing power saws for landscape engineering.
Background technology
Owing to power saws has the convenient and swift advantage such as portable, power saws becomes be widely used in afforestation
The instrument of kind.
But, there is techniques below problem in the power saws in correlation technique: during afforestation, and power saws is the most outside
Face uses, thus in the case of some area does not has power supply, it is impossible to carry out the work such as gardens pruning, or in situations such as power-off
Under, have impact on the work efficiency of gardens pruning worker.
Summary of the invention
For overcoming problem present in correlation technique, the application provides a kind of self energizing for landscape engineering electronic
Saw.
The invention provides a kind of self energizing power saws for landscape engineering, it is characterised in that: described power saws
Electric saw bar and saw blade including tubulose；Described electric saw bar includes that motor and solar components, described motor are arranged at electric saw
The middle position of bar, described solar components is arranged at the side of electric saw bar, by being wired to motor, described motor
The other end connect and have switch, described switch to be arranged at the end free end of electric saw bar.
Preferably, described electric saw bar is transparent tubulose.
Preferably, described saw blade is dentation saw blade.
The technical scheme that embodiments herein provides can include following beneficial effect:
1. The embodiment provides a kind of self energizing power saws for landscape engineering, owing to have employed too
The power supply that sun energy battery operates as it, can continue to keep efficient work in the case of power-off or not having external power supply
Make, it is simple to Gardener author works, and saves substantial amounts of time cost simultaneously.
2. The embodiment provides a kind of self energizing power saws for landscape engineering, owing to this street lamp is adopted
The power supply operated as it with solaode module, and this solaode module is made up of black silicon solar cell,
During preparing black silicon solar cell, use Cu/Ni alloy film auxiliary chemical method etching to prepare black silicon structure, use the method
Silicon chip surface in pyramid structure corrodes the nanostructured appropriate depth, effectively reduce the reflectance of visible ray to 1% with
Under, can effectively reduce the recombination rate of carrier simultaneously, use SiO simultaneously2/Al2O3/SiNXThin film, as overlayer passivation film, has
Effect reduces the reflectance of sunlight, improves the life-span of carrier.And then use the solaode that this black silicon structure makes
Extinction efficiency improve, make this power saws service life improve.
3. The embodiment provides a kind of self energizing power saws for landscape engineering, at its electricity used
Source uses black silicon solar cell, owing to using SiO2/Al2O3/SiNXThin film is as overlayer passivation film, and this structural membrane has
Effect improves the life-span of carrier, in combination with the use of buffer electrode layer, is effectively improved the efficiency of solaode, test
Obtain high solar battery conversion efficiency and reach 20.78%.And then, make the power supply of LED street lamp extend service life, save
Change the man power and material's cost needed for battery；Additionally, during preparing solaode, owing to Fe3O4 magnetic is received
Rice corpuscles is doped in P3HT:PCBM photoactive layer, increases free carrier concentration, improves the short circuit current of battery, improves black
The energy conversion efficiency of silicon solar cell；Simple in construction, production technology is simple, low cost, therefore, is promoting battery conversion effect
Reduce manufacturing cost while rate, have and apply on a large scale generate the potentiality in reality.And then make being fabricated to of power saws
This and service efficiency are all greatly enhanced.
Aspect and advantage that the application adds will part be given in the following description, and part will become from the following description
Obtain substantially, or recognized by the practice of the application.It should be appreciated that above general description and details hereinafter only describe
It is exemplary and explanatory, the application can not be limited.
Accompanying drawing explanation
Accompanying drawing herein is merged in description and constitutes the part of this specification, it is shown that meet the enforcement of the present invention
Example, and for explaining the principle of the present invention together with description.
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the preparation technology of the black silicon solar cell module used according to the present invention shown in an exemplary embodiment
FB(flow block).
Fig. 3 is the silicon chip surface pyramid structure schematic diagram that the present invention uses.
Fig. 4 is the black silicon structure surface film schematic diagram that the present invention uses.
Wherein: 1-switchs, 2-motor, 3-saw blade, 4-electric saw bar, 5-solar components, 6-electric wire.
Detailed description of the invention
Here will illustrate exemplary embodiment in detail, its example represents in the accompanying drawings.Explained below relates to
During accompanying drawing, unless otherwise indicated, the same numbers in different accompanying drawings represents same or analogous key element.Following exemplary embodiment
Described in embodiment do not represent all embodiments consistent with the present invention.On the contrary, they are only with the most appended
The example of the apparatus and method that some aspects that described in detail in claims, the present invention are consistent.
In the description of the present application, it should be noted that unless otherwise prescribed and limit, term " is installed ", " being connected ",
" connect " and should be interpreted broadly, for example, it may be mechanically connected or electrical connection, it is also possible to be the connection of two element internals, can
Being to be joined directly together, it is also possible to be indirectly connected to by intermediary, for the ordinary skill in the art, can basis
Concrete condition understands the concrete meaning of above-mentioned term.
Along with worsening shortages and the environmental pollution of fossil energy increase the weight of, make full use of the renewable energy including solar energy
Source is increasingly paid close attention to by people.Industry solar cell production cost is higher at present, and constraining the universal of solar electrical energy generation should
With.Therefore to make solar cell can be used widely in the world, we must utilize new technology of preparing to improve
With the novel solar cell of research and development, reduce production cost further and improve photoelectric transformation efficiency.
Solar cell is device luminous energy being converted into electric energy, in the compounds solar cell of volume production, cadmium telluride
The conversion efficiency of solar cell is the highest, but the cadmium used in its raw material is harmful substance, is likely to result in environmental pollution after using, because of
This limits being widely used of such battery.Crystal silicon cell is the most most widely used and a kind of battery the most ripe, but
Being existing crystal silicon cell owing to structure is complicated, producting process difficulty is relatively big, high cost, is not applied to large-scale
In commercial production.Therefore, promote reduce while battery conversion efficiency manufacturing cost be only the key advancing photovoltaic application because of
Element.
High-efficiency and low-cost solar cell technology is the key factor of universal photovoltaic generation.The discovery of black silicon and black silion cell
The development of technology, the research and development for low-cost high-efficiency battery provide effective resolving ideas.Due to special nano surface knot
Structure makes the Carrier recombination of black silion cell be far above common monocrystalline silicon battery, thus causes current black silion cell efficiency not reach
Expection to people.
Research finds, is doped in P3HT:PCBM photoactive layer by Fe3O4 magnetic nano-particle, owing to Fe3O4 magnetic is received
Rice corpuscles has superparamagnetism, and the magnetic field produced under electromagnetic interaction improves triplet state in P3HT:PCBM photoactive layer
Ratio shared by exciton, produces more free carrier, makes free carrier concentration increase, and can improve the short circuit electricity of battery
Stream, and then improve the energy conversion efficiency of polymer solar battery.
Embodiment 1:
Fig. 1 is the structure according to a kind of self energizing power saws for landscape engineering shown in an exemplary embodiment
Schematic diagram, as it is shown in figure 1, a kind of self energizing power saws for landscape engineering, described power saws includes the electric saw of tubulose
Bar 4 and saw blade 3；Described electric saw bar 4 includes motor 2 and solar components 5, and described motor 2 is arranged at the central authorities of electric saw bar 4
Position, described solar components 5 is arranged at the side of electric saw bar 4, is connected to motor 2 by electric wire 6, described motor 2
The other end connects has switch 1, described switch 1 to be arranged at the end free end of electric saw bar 4.Preferably, described electric saw bar 4 is transparent
Tubulose.Preferably, described saw blade 3 is dentation saw blade.
As preferably, described solar module includes black silicon solar cell module and accumulator；This black silicon sun
Can battery module be black silicon structure based on P-type silicon sheet as shown in Figure 3, this black silicon structure be in silicon chip surface pyramid structure
On the basis of utilize Cu/Ni alloy film auxiliary chemical method etching preparation, in the present embodiment, this pyramid structure be
In the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%, corrosion obtains.
Diffusion layer 01 as shown in Figure 4, photoactive layer 02, SiO it is followed successively by above described black silicon structure2/Al2O3/SiNXFolded
Layer passivating film 03, buffer electrode layer 04 and upper electrode 05；Described photoactive layer 02 is doped with Fe3O4Magnetic nano-particle；Described black
Silicon structure is buffer electrode layer, bottom electrode in turn below；Described SiO2/Al2O3/SiNXThe thickness of overlayer passivation film about 70nm.Its
In, described diffusion layer 01 is Doping Phosphorus Elements Diffusion source for using phosphorus oxychloride.
Fig. 2 is to be used according to a kind of self energizing power saws for landscape engineering shown in an exemplary embodiment
The preparation method of black silicon solar cell group module, referring to Fig. 2, comprise the following steps:
Step one, cleaning silicon chip: take certain size P-type silicon sheet, silicon chip is immersed in sulphuric acid: hydrogen peroxide=3:2 (volume
Than) mixed solution in and carry out supersound process 5min, silicon chip is immersed 15vol%HF solution, then use deionized water pair
Silicon chip rinses 2min, silicon chip is then placed in the HF solution of 0.5wt.% rinsing 1min, to remove silicon chip surface autoxidation
Layer, finally uses deionized water rinsing 2min；
Step 2, prepares pyramid structure: prepare the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%, will
Silicon chip is placed in mixed solution ultrasonic erosion 1h at 80 DEG C, obtains pyramid antireflection structure at silicon chip surface；
Step 3, prepares black silicon structure: be positioned in magnetic control sputtering device by silicon chip, be evacuated to 1.2 × 10-4Below Pa,
Magnetron sputtering C u target, Ni target simultaneously, power is respectively 140W, 120W, and magnetron sputtering C u target, Ni target time are 5min so that it is shape
Become Cu/Ni alloy film；Above-mentioned sputtering have the silicon chip of Cu/Ni alloy film be positioned over 2.7M H2O2 and the mixed solution of 8.3M HF
In, at 92 DEG C, corrode 100min, make silicon chip surface corrode and silicon nanostructure, the most black silicon structure, molten with hydrochloric acid after corroding
It is carried out by liquid, removes the Ni granule of residual, finally uses deionized water cleaning silicon chip；
Step 4, prepares black silicon solar cell:
1) silicon chip that will prepare, use phosphorus oxychloride liquid source diffuse to form diffusion layer, diffusion temperature be 800 DEG C～
1150℃；Use the plasma periphery etching of carbon tetrafluoride and oxygen, the diffusion layer at the edge of silicon chip is removed, makes upper and lower two
Face cuts off, and then utilizes low concentration hydrofluoric acid solution (3vol%) that Wafer Cleaning 30s is removed phosphorosilicate glass；
2) by the mass ratio of Fe3O4:P3HT:PCBM=0.018:1:0.8, Fe3O4 magnetic nano-particle is doped to light live
In property layer solution, doping content is 1%, is then placed in by silicon chip in above-mentioned photoactive layer solution, sonic oscillation 30min, at silicon
Sheet surface covers one layer of photoactive layer；
Wherein, Fe3O4 magnetic nano-particle uses the preparation of liquid phase coprecipitation method as follows: by 0.85g (3.1mmol)
FeCl3 6H2O Yu 0.3g (1.5mmol) FeCl2 4H2O, is dissolved under nitrogen protection in 200ml ultra-pure water and makes iron salt
Mixed solution；At 80 DEG C, vigorous magnetic stirs, and the Dilute Ammonia Solution that 2ml mass concentration is 25% is slowly added to iron salt and mixes
Closing in solution, when solution value is increased to 7～8, iron salt hydrolysis produces the Fe3O4 magnetic nano-particle of a large amount of black, continues to drip
Hydro-oxidation helium reacts 3h to pH=9, makes hydrolysis tend to complete；By black Fe3O4Magnetic nano-particle Magnet is from solution separating
Out, milli-Q water, be then dispersed in 200ml ultra-pure water, add 2ml mass concentration be 25% Dilute Ammonia Solution and
1ml oleic acid, stirs 1h in 80 DEG C of constant temperature vigorous magnetic.The most backward solution is slowly added to the concentrated hydrochloric acid that mass concentration is 36%,
Until flask produces lumpy precipitate, use ethanol purge 3 times again after being collected with Magnet by lumpy precipitate, remove unreacted oil
Acid, obtains the Fe of oleic acid modified3O4Magnetic nano-particle；
3) use high-temperature thermal oxidation method, the silicon chip of above-mentioned gained is loaded into high temperature oxidation furnace, in stove, is passed through oxygen, makes silicon
Sheet in oxidation atmosphere, the SiO that the most oxidized generation in surface 5～10nm is thick2, then this silicon chip is put into magnetic control sputtering device
In, utilize reaction magnetocontrol sputtering method to be first deposited with one layer of Al2O3Thin film, thickness about 40nm, then recycling PECVD deposition
One layer of silicon nitride so that it is form SiO2/Al2O3/SiNXOverlayer passivation film；
4) prepare buffer electrode layer: utilize radio frequency magnetron sputtering method, deposit one in silicon chip upper and lower surface respectively
Layer Cr film, thickness is 100nm, as the cushion of upper/lower electrode；
5) prepare electrode: the method using silk screen printing, make upper/lower electrode and the back of the body electricity of black silicon solar cell respectively
, finally black silicon solar cell is sintered, make electrode and silicon form good Ohmic contact, then connect a wire to up and down
Electrode.
Test result:
Black silion cell characteristic in AM1.5 standard analog light source irradiation condition:
Open-circuit voltage is 0.965V, and short circuit current is 58.36mA/cm2, fill factor, curve factor is 80.63%；Black silion cell is to too
The reflectance of sunlight is 0.84%.
QSSPC is used to measure the carrier lifetime of battery, when injecting carrier concentration △ n=1015cm-3Time, effective minority
Carrier lifetime is 10.9 μ s.
It is 20.78% that test obtains the solar energy conversion efficiency of this LED street lamp, the reflectance about 0.84% to sunlight,
Through 3000 retests, transformation efficiency variable quantity is less than 9%, and the conversion efficiency of this LED street lamp is high, reproducible.
Embodiment 2
Fig. 1 is the structure according to a kind of self energizing power saws for landscape engineering shown in an exemplary embodiment
Schematic diagram, as it is shown in figure 1, a kind of self energizing power saws for landscape engineering, described power saws includes the electric saw of tubulose
Bar 4 and saw blade 3；Described electric saw bar 4 includes motor 2 and solar components 5, and described motor 2 is arranged at the central authorities of electric saw bar 4
Position, described solar components 5 is arranged at the side of electric saw bar 4, is connected to motor 2 by electric wire 6, described motor 2
The other end connects has switch 1, described switch 1 to be arranged at the end free end of electric saw bar 4.Preferably, described electric saw bar 4 is transparent
Tubulose.Preferably, described saw blade 3 is dentation saw blade.
As preferably, described solar module includes black silicon solar cell module and accumulator；This black silicon sun
Can battery module be black silicon structure based on P-type silicon sheet as shown in Figure 3, this black silicon structure be in silicon chip surface pyramid structure
On the basis of utilize Cu/Ni alloy film auxiliary chemical method etching preparation, in the present embodiment, this pyramid structure be
In the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%, corrosion obtains.
Diffusion layer 01 as shown in Figure 4, photoactive layer 02, SiO it is followed successively by above described black silicon structure2/Al2O3/SiNXFolded
Layer passivating film 03, buffer electrode layer 04 and upper electrode 05；Described photoactive layer 02 is doped with Fe3O4Magnetic nano-particle；Described black
Silicon structure is buffer electrode layer, bottom electrode in turn below；Described SiO2/Al2O3/SiNXThe thickness of overlayer passivation film about 70nm.Its
In, described diffusion layer 01 is Doping Phosphorus Elements Diffusion source for using phosphorus oxychloride.
Fig. 2 is to be used according to a kind of self energizing power saws for landscape engineering shown in an exemplary embodiment
The preparation method of black silicon solar cell group module, referring to Fig. 2, comprise the following steps:
Step one, cleaning silicon chip: take certain size P-type silicon sheet, silicon chip is immersed in sulphuric acid: hydrogen peroxide=3:2 (volume
Than) mixed solution in and carry out supersound process 5min, silicon chip is immersed 15vol%HF solution, then use deionized water pair
Silicon chip rinses 2min, silicon chip is then placed in the HF solution of 0.5wt.% rinsing 1min, to remove silicon chip surface autoxidation
Layer, finally uses deionized water rinsing 2min；
Step 2, prepares pyramid structure: prepare the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%, will
Silicon chip is placed in mixed solution ultrasonic erosion 1h at 80 DEG C, obtains pyramid antireflection structure at silicon chip surface；
Step 3, prepares black silicon structure: be positioned in magnetic control sputtering device by silicon chip, be evacuated to 1.2 × 10-4Below Pa,
Magnetron sputtering C u target, Ni target simultaneously, power is respectively 140W, 120W, and magnetron sputtering C u target, Ni target time are 5min so that it is shape
Become Cu/Ni alloy film；Above-mentioned sputtering have the silicon chip of Cu/Ni alloy film be positioned over 2.7M H2O2 and the mixed solution of 8.3M HF
In, at 92 DEG C, corrode 100min, make silicon chip surface corrode and silicon nanostructure, the most black silicon structure, molten with hydrochloric acid after corroding
It is carried out by liquid, removes the Ni granule of residual, finally uses deionized water cleaning silicon chip；
Step 4, prepares black silicon solar cell:
1) silicon chip that will prepare, use phosphorus oxychloride liquid source diffuse to form diffusion layer, diffusion temperature be 800 DEG C～
1150℃；Use the plasma periphery etching of carbon tetrafluoride and oxygen, the diffusion layer at the edge of silicon chip is removed, makes upper and lower two
Face cuts off, and then utilizes low concentration hydrofluoric acid solution (3vol%) that Wafer Cleaning 30s is removed phosphorosilicate glass；
2) by the mass ratio of Fe3O4:P3HT:PCBM=0.018:1:0.8, Fe3O4 magnetic nano-particle is doped to light live
In property layer solution, doping content is 1%, is then placed in by silicon chip in above-mentioned photoactive layer solution, sonic oscillation 30min, at silicon
Sheet surface covers one layer of photoactive layer；
Wherein, Fe3O4 magnetic nano-particle uses the preparation of liquid phase coprecipitation method as follows: by 0.85g (3.1mmol)
FeCl3 6H2O Yu 0.3g (1.5mmol) FeCl2 4H2O, is dissolved under nitrogen protection in 200ml ultra-pure water and makes iron salt
Mixed solution；At 80 DEG C, vigorous magnetic stirs, and the Dilute Ammonia Solution that 2ml mass concentration is 25% is slowly added to iron salt and mixes
Closing in solution, when solution value is increased to 7～8, iron salt hydrolysis produces the Fe3O4 magnetic nano-particle of a large amount of black, continues to drip
Hydro-oxidation helium reacts 3h to pH=9, makes hydrolysis tend to complete；By black Fe3O4Magnetic nano-particle Magnet is from solution separating
Out, milli-Q water, be then dispersed in 200ml ultra-pure water, add 2ml mass concentration be 25% Dilute Ammonia Solution and
1ml oleic acid, stirs 1h in 80 DEG C of constant temperature vigorous magnetic.The most backward solution is slowly added to the concentrated hydrochloric acid that mass concentration is 36%,
Until flask produces lumpy precipitate, use ethanol purge 3 times again after being collected with Magnet by lumpy precipitate, remove unreacted oil
Acid, obtains the Fe of oleic acid modified3O4Magnetic nano-particle；
3) use high-temperature thermal oxidation method, the silicon chip of above-mentioned gained is loaded into high temperature oxidation furnace, in stove, is passed through oxygen, makes silicon
Sheet in oxidation atmosphere, the SiO that the most oxidized generation in surface 5～10nm is thick2, then this silicon chip is put into magnetic control sputtering device
In, utilize reaction magnetocontrol sputtering method to be first deposited with one layer of Al2O3Thin film, thickness about 40nm, then recycling PECVD deposition
One layer of silicon nitride so that it is form SiO2/Al2O3/SiNXOverlayer passivation film；
4) prepare buffer electrode layer: utilize radio frequency magnetron sputtering method, deposit one in silicon chip upper and lower surface respectively
Layer Cr film, thickness is 100nm, as the cushion of upper/lower electrode；
5) prepare electrode: the method using silk screen printing, make upper/lower electrode and the back of the body electricity of black silicon solar cell respectively
, finally black silicon solar cell is sintered, make electrode and silicon form good Ohmic contact, then connect a wire to up and down
Electrode.
Test result:
Black silion cell characteristic in AM1.5 standard analog light source irradiation condition:
Short circuit current is 58.36mA/cm2, fill factor, curve factor is 80.63%；Black silion cell reflectance is 1.5%.Use
QSSPC measures the carrier lifetime of battery, when injecting carrier concentration △ n=1015cm-3Time, effective minority carrier lifetime is
10.9μs。
It is 21.78% that test obtains the solar energy conversion efficiency of this LED street lamp, the reflectance about 1.5% to sunlight, warp
Crossing 3000 retests, transformation efficiency variable quantity is less than 10%, and the conversion efficiency of this LED street lamp is high, reproducible.
Embodiment 3
Fig. 1 is the structure according to a kind of self energizing power saws for landscape engineering shown in an exemplary embodiment
Schematic diagram, as it is shown in figure 1, a kind of self energizing power saws for landscape engineering, described power saws includes the electric saw of tubulose
Bar 4 and saw blade 3；Described electric saw bar 4 includes motor 2 and solar components 5, and described motor 2 is arranged at the central authorities of electric saw bar 4
Position, described solar components 5 is arranged at the side of electric saw bar 4, is connected to motor 2 by electric wire 6, described motor 2
The other end connects has switch 1, described switch 1 to be arranged at the end free end of electric saw bar 4.Preferably, described electric saw bar 4 is transparent
Tubulose.Preferably, described saw blade 3 is dentation saw blade.
As preferably, described solar module includes black silicon solar cell module and accumulator；This black silicon sun
Can battery module be black silicon structure based on P-type silicon sheet as shown in Figure 3, this black silicon structure be in silicon chip surface pyramid structure
On the basis of utilize Cu/Ni alloy film auxiliary chemical method etching preparation, in the present embodiment, this pyramid structure be
In the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%, corrosion obtains.
Diffusion layer 01 as shown in Figure 4, photoactive layer 02, SiO it is followed successively by above described black silicon structure2/Al2O3/SiNXFolded
Layer passivating film 03, buffer electrode layer 04 and upper electrode 05；Described photoactive layer 02 is doped with Fe3O4Magnetic nano-particle；Described black
Silicon structure is buffer electrode layer, bottom electrode in turn below；Described SiO2/Al2O3/SiNXThe thickness of overlayer passivation film about 70nm.Its
In, described diffusion layer 01 is Doping Phosphorus Elements Diffusion source for using phosphorus oxychloride.
Fig. 2 is to be used according to a kind of self energizing power saws for landscape engineering shown in an exemplary embodiment
The preparation method of black silicon solar cell group module, referring to Fig. 2, comprise the following steps:
Step one, cleaning silicon chip: take certain size P-type silicon sheet, silicon chip is immersed in sulphuric acid: hydrogen peroxide=3:2 (volume
Than) mixed solution in and carry out supersound process 5min, silicon chip is immersed 15vol%HF solution, then use deionized water pair
Silicon chip rinses 2min, silicon chip is then placed in the HF solution of 0.5wt.% rinsing 1min, to remove silicon chip surface autoxidation
Layer, finally uses deionized water rinsing 2min；
Step 2, prepares pyramid structure: prepare the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%, will
Silicon chip is placed in mixed solution ultrasonic erosion 1h at 80 DEG C, obtains pyramid antireflection structure at silicon chip surface；
Step 3, prepares black silicon structure: be positioned in magnetic control sputtering device by silicon chip, be evacuated to 1.2 × 10-4Below Pa,
Magnetron sputtering C u target, Ni target simultaneously, power is respectively 140W, 120W, and magnetron sputtering C u target, Ni target time are 5min so that it is shape
Become Cu/Ni alloy film；Above-mentioned sputtering have the silicon chip of Cu/Ni alloy film be positioned over 2.7M H2O2 and the mixed solution of 8.3M HF
In, at 92 DEG C, corrode 100min, make silicon chip surface corrode and silicon nanostructure, the most black silicon structure, molten with hydrochloric acid after corroding
It is carried out by liquid, removes the Ni granule of residual, finally uses deionized water cleaning silicon chip；
Step 4, prepares black silicon solar cell:
1) silicon chip that will prepare, use phosphorus oxychloride liquid source diffuse to form diffusion layer, diffusion temperature be 800 DEG C～
1150℃；Use the plasma periphery etching of carbon tetrafluoride and oxygen, the diffusion layer at the edge of silicon chip is removed, makes upper and lower two
Face cuts off, and then utilizes low concentration hydrofluoric acid solution (3vol%) that Wafer Cleaning 30s is removed phosphorosilicate glass；
2) by the mass ratio of Fe3O4:P3HT:PCBM=0.018:1:0.8, Fe3O4 magnetic nano-particle is doped to light live
In property layer solution, doping content is 1%, is then placed in by silicon chip in above-mentioned photoactive layer solution, sonic oscillation 30min, at silicon
Sheet surface covers one layer of photoactive layer；
Wherein, Fe3O4 magnetic nano-particle uses the preparation of liquid phase coprecipitation method as follows: by 0.85g (3.1mmol)
FeCl3 6H2O Yu 0.3g (1.5mmol) FeCl2 4H2O, is dissolved under nitrogen protection in 200ml ultra-pure water and makes iron salt
Mixed solution；At 80 DEG C, vigorous magnetic stirs, and the Dilute Ammonia Solution that 2ml mass concentration is 25% is slowly added to iron salt and mixes
Closing in solution, when solution value is increased to 7～8, iron salt hydrolysis produces the Fe3O4 magnetic nano-particle of a large amount of black, continues to drip
Hydro-oxidation helium reacts 3h to pH=9, makes hydrolysis tend to complete；By black Fe3O4Magnetic nano-particle Magnet is from solution separating
Out, milli-Q water, be then dispersed in 200ml ultra-pure water, add 2ml mass concentration be 25% Dilute Ammonia Solution and
1ml oleic acid, stirs 1h in 80 DEG C of constant temperature vigorous magnetic.The most backward solution is slowly added to the concentrated hydrochloric acid that mass concentration is 36%,
Until flask produces lumpy precipitate, use ethanol purge 3 times again after being collected with Magnet by lumpy precipitate, remove unreacted oil
Acid, obtains the Fe of oleic acid modified3O4Magnetic nano-particle；
3) use high-temperature thermal oxidation method, the silicon chip of above-mentioned gained is loaded into high temperature oxidation furnace, in stove, is passed through oxygen, makes silicon
Sheet in oxidation atmosphere, the SiO that the most oxidized generation in surface 5～10nm is thick2, then this silicon chip is put into magnetic control sputtering device
In, utilize reaction magnetocontrol sputtering method to be first deposited with one layer of Al2O3Thin film, thickness about 40nm, then recycling PECVD deposition
One layer of silicon nitride so that it is form SiO2/Al2O3/SiNXOverlayer passivation film；
4) prepare buffer electrode layer: utilize radio frequency magnetron sputtering method, deposit one in silicon chip upper and lower surface respectively
Layer Cr film, thickness is 100nm, as the cushion of upper/lower electrode；
5) prepare electrode: the method using silk screen printing, make upper/lower electrode and the back of the body electricity of black silicon solar cell respectively
, finally black silicon solar cell is sintered, make electrode and silicon form good Ohmic contact, then connect a wire to up and down
Electrode.
Test result:
Black silion cell characteristic in AM1.5 standard analog light source irradiation condition:
Open-circuit voltage is 0.965V, and short circuit current is 58.36mA/cm2, fill factor, curve factor is 80.63%；Black silion cell reflects
Rate is 1.32%.QSSPC is used to measure the carrier lifetime of battery, when injecting carrier concentration △ n=1015cm-3Time, effectively
Minority carrier lifetime is 10.9 μ s.
It is 22.78% that test obtains the solar energy conversion efficiency of this LED street lamp, the reflectance about 1.32% to sunlight,
Through 3000 retests, transformation efficiency variable quantity is less than 11%, and the conversion efficiency of this LED street lamp is high, reproducible.
Embodiment 4
Fig. 1 is the structure according to a kind of self energizing power saws for landscape engineering shown in an exemplary embodiment
Schematic diagram, as it is shown in figure 1, a kind of self energizing power saws for landscape engineering, described power saws includes the electric saw of tubulose
Bar 4 and saw blade 3；Described electric saw bar 4 includes motor 2 and solar components 5, and described motor 2 is arranged at the central authorities of electric saw bar 4
Position, described solar components 5 is arranged at the side of electric saw bar 4, is connected to motor 2 by electric wire 6, described motor 2
The other end connects has switch 1, described switch 1 to be arranged at the end free end of electric saw bar 4.Preferably, described electric saw bar 4 is transparent
Tubulose.Preferably, described saw blade 3 is dentation saw blade.
As preferably, described solar module includes black silicon solar cell module and accumulator；This black silicon sun
Can battery module be black silicon structure based on P-type silicon sheet as shown in Figure 3, this black silicon structure be in silicon chip surface pyramid structure
On the basis of utilize Cu/Ni alloy film auxiliary chemical method etching preparation, in the present embodiment, this pyramid structure be
In the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%, corrosion obtains.
Diffusion layer 01 as shown in Figure 4, photoactive layer 02, SiO it is followed successively by above described black silicon structure2/Al2O3/SiNXFolded
Layer passivating film 03, buffer electrode layer 04 and upper electrode 05；Described photoactive layer 02 is doped with Fe3O4Magnetic nano-particle；Described black
Silicon structure is buffer electrode layer, bottom electrode in turn below；Described SiO2/Al2O3/SiNXThe thickness of overlayer passivation film about 70nm.Its
In, described diffusion layer 01 is Doping Phosphorus Elements Diffusion source for using phosphorus oxychloride.
Fig. 2 is to be used according to a kind of self energizing power saws for landscape engineering shown in an exemplary embodiment
The preparation method of black silicon solar cell group module, referring to Fig. 2, comprise the following steps:
Step one, cleaning silicon chip: take certain size P-type silicon sheet, silicon chip is immersed in sulphuric acid: hydrogen peroxide=3:2 (volume
Than) mixed solution in and carry out supersound process 5min, silicon chip is immersed 15vol%HF solution, then use deionized water pair
Silicon chip rinses 2min, silicon chip is then placed in the HF solution of 0.5wt.% rinsing 1min, to remove silicon chip surface autoxidation
Layer, finally uses deionized water rinsing 2min；
Step 2, prepares pyramid structure: prepare the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%, will
Silicon chip is placed in mixed solution ultrasonic erosion 1h at 80 DEG C, obtains pyramid antireflection structure at silicon chip surface；
Step 3, prepares black silicon structure: be positioned in magnetic control sputtering device by silicon chip, be evacuated to 1.2 × 10-4Below Pa,
Magnetron sputtering C u target, Ni target simultaneously, power is respectively 140W, 120W, and magnetron sputtering C u target, Ni target time are 5min so that it is shape
Become Cu/Ni alloy film；Above-mentioned sputtering have the silicon chip of Cu/Ni alloy film be positioned over 2.7M H2O2 and the mixed solution of 8.3M HF
In, at 92 DEG C, corrode 100min, make silicon chip surface corrode and silicon nanostructure, the most black silicon structure, molten with hydrochloric acid after corroding
It is carried out by liquid, removes the Ni granule of residual, finally uses deionized water cleaning silicon chip；
Step 4, prepares black silicon solar cell:
1) silicon chip that will prepare, use phosphorus oxychloride liquid source diffuse to form diffusion layer, diffusion temperature be 800 DEG C～
1150℃；Use the plasma periphery etching of carbon tetrafluoride and oxygen, the diffusion layer at the edge of silicon chip is removed, makes upper and lower two
Face cuts off, and then utilizes low concentration hydrofluoric acid solution (3vol%) that Wafer Cleaning 30s is removed phosphorosilicate glass；
2) by the mass ratio of Fe3O4:P3HT:PCBM=0.018:1:0.8, Fe3O4 magnetic nano-particle is doped to light live
In property layer solution, doping content is 1%, is then placed in by silicon chip in above-mentioned photoactive layer solution, sonic oscillation 30min, at silicon
Sheet surface covers one layer of photoactive layer；
Wherein, Fe3O4 magnetic nano-particle uses the preparation of liquid phase coprecipitation method as follows: by 0.85g (3.1mmol)
FeCl3 6H2O Yu 0.3g (1.5mmol) FeCl2 4H2O, is dissolved under nitrogen protection in 200ml ultra-pure water and makes iron salt
Mixed solution；At 80 DEG C, vigorous magnetic stirs, and the Dilute Ammonia Solution that 2ml mass concentration is 25% is slowly added to iron salt and mixes
Closing in solution, when solution value is increased to 7～8, iron salt hydrolysis produces the Fe3O4 magnetic nano-particle of a large amount of black, continues to drip
Hydro-oxidation helium reacts 3h to pH=9, makes hydrolysis tend to complete；By black Fe3O4Magnetic nano-particle Magnet is from solution separating
Out, milli-Q water, be then dispersed in 200ml ultra-pure water, add 2ml mass concentration be 25% Dilute Ammonia Solution and
1ml oleic acid, stirs 1h in 80 DEG C of constant temperature vigorous magnetic.The most backward solution is slowly added to the concentrated hydrochloric acid that mass concentration is 36%,
Until flask produces lumpy precipitate, use ethanol purge 3 times again after being collected with Magnet by lumpy precipitate, remove unreacted oil
Acid, obtains the Fe of oleic acid modified3O4Magnetic nano-particle；
3) use high-temperature thermal oxidation method, the silicon chip of above-mentioned gained is loaded into high temperature oxidation furnace, in stove, is passed through oxygen, makes silicon
Sheet in oxidation atmosphere, the SiO that the most oxidized generation in surface 5～10nm is thick2, then this silicon chip is put into magnetic control sputtering device
In, utilize reaction magnetocontrol sputtering method to be first deposited with one layer of Al2O3Thin film, thickness about 40nm, then recycling PECVD deposition
One layer of silicon nitride so that it is form SiO2/Al2O3/SiNXOverlayer passivation film；
4) prepare buffer electrode layer: utilize radio frequency magnetron sputtering method, deposit one in silicon chip upper and lower surface respectively
Layer Cr film, thickness is 100nm, as the cushion of upper/lower electrode；
5) prepare electrode: the method using silk screen printing, make upper/lower electrode and the back of the body electricity of black silicon solar cell respectively
, finally black silicon solar cell is sintered, make electrode and silicon form good Ohmic contact, then connect a wire to up and down
Electrode.
Test result:
Black silion cell characteristic in AM1.5 standard analog light source irradiation condition:
Open-circuit voltage is 0.965V, and short circuit current is 58.36mA/cm2, fill factor, curve factor is 80.63%；Black silion cell reflects
Rate is 1.26%.QSSPC is used to measure the carrier lifetime of battery, when injecting carrier concentration △ n=1015cm-3Time, effectively
Minority carrier lifetime is 10.9 μ s.
It is 20.69% that test obtains the solar energy conversion efficiency of this LED street lamp, the reflectance about 1.26% to sunlight,
Through 3000 retests, transformation efficiency variable quantity is less than 12%, and the conversion efficiency of this LED street lamp is high, reproducible.
Embodiment 5
Fig. 1 is the structure according to a kind of self energizing power saws for landscape engineering shown in an exemplary embodiment
Schematic diagram, as it is shown in figure 1, a kind of self energizing power saws for landscape engineering, described power saws includes the electric saw of tubulose
Bar 4 and saw blade 3；Described electric saw bar 4 includes motor 2 and solar components 5, and described motor 2 is arranged at the central authorities of electric saw bar 4
Position, described solar components 5 is arranged at the side of electric saw bar 4, is connected to motor 2 by electric wire 6, described motor 2
The other end connects has switch 1, described switch 1 to be arranged at the end free end of electric saw bar 4.Preferably, described electric saw bar 4 is transparent
Tubulose.Preferably, described saw blade 3 is dentation saw blade.
As preferably, described solar module includes black silicon solar cell module and accumulator；This black silicon sun
Can battery module be black silicon structure based on P-type silicon sheet as shown in Figure 3, this black silicon structure be in silicon chip surface pyramid structure
On the basis of utilize Cu/Ni alloy film auxiliary chemical method etching preparation, in the present embodiment, this pyramid structure be
In the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%, corrosion obtains.
Diffusion layer 01 as shown in Figure 4, photoactive layer 02, SiO it is followed successively by above described black silicon structure2/Al2O3/SiNXFolded
Layer passivating film 03, buffer electrode layer 04 and upper electrode 05；Described photoactive layer 02 is doped with Fe3O4Magnetic nano-particle；Described black
Silicon structure is buffer electrode layer, bottom electrode in turn below；Described SiO2/Al2O3/SiNXThe thickness of overlayer passivation film about 70nm.Its
In, described diffusion layer 01 is Doping Phosphorus Elements Diffusion source for using phosphorus oxychloride.
Fig. 2 is to be used according to a kind of self energizing power saws for landscape engineering shown in an exemplary embodiment
The preparation method of black silicon solar cell group module, referring to Fig. 2, comprise the following steps:
Step one, cleaning silicon chip: take certain size P-type silicon sheet, silicon chip is immersed in sulphuric acid: hydrogen peroxide=3:2 (volume
Than) mixed solution in and carry out supersound process 5min, silicon chip is immersed 15vol%HF solution, then use deionized water pair
Silicon chip rinses 2min, silicon chip is then placed in the HF solution of 0.5wt.% rinsing 1min, to remove silicon chip surface autoxidation
Layer, finally uses deionized water rinsing 2min；
Step 2, prepares pyramid structure: prepare the isopropyl alcohol mixture of NaOH and 7vol.% of 2.8wt.%, will
Silicon chip is placed in mixed solution ultrasonic erosion 1h at 80 DEG C, obtains pyramid antireflection structure at silicon chip surface；
Step 3, prepares black silicon structure: be positioned in magnetic control sputtering device by silicon chip, be evacuated to 1.2 × 10-4Below Pa,
Magnetron sputtering C u target, Ni target simultaneously, power is respectively 140W, 120W, and magnetron sputtering C u target, Ni target time are 5min so that it is shape
Become Cu/Ni alloy film；Above-mentioned sputtering have the silicon chip of Cu/Ni alloy film be positioned over 2.7M H2O2 and the mixed solution of 8.3M HF
In, at 92 DEG C, corrode 100min, make silicon chip surface corrode and silicon nanostructure, the most black silicon structure, molten with hydrochloric acid after corroding
It is carried out by liquid, removes the Ni granule of residual, finally uses deionized water cleaning silicon chip；
Step 4, prepares black silicon solar cell:
1) silicon chip that will prepare, use phosphorus oxychloride liquid source diffuse to form diffusion layer, diffusion temperature be 800 DEG C～
1150℃；Use the plasma periphery etching of carbon tetrafluoride and oxygen, the diffusion layer at the edge of silicon chip is removed, makes upper and lower two
Face cuts off, and then utilizes low concentration hydrofluoric acid solution (3vol%) that Wafer Cleaning 30s is removed phosphorosilicate glass；
2) by the mass ratio of Fe3O4:P3HT:PCBM=0.018:1:0.8, Fe3O4 magnetic nano-particle is doped to light live
In property layer solution, doping content is 1%, is then placed in by silicon chip in above-mentioned photoactive layer solution, sonic oscillation 30min, at silicon
Sheet surface covers one layer of photoactive layer；
Wherein, Fe3O4 magnetic nano-particle uses the preparation of liquid phase coprecipitation method as follows: by 0.85g (3.1mmol)
FeCl3 6H2O Yu 0.3g (1.5mmol) FeCl2 4H2O, is dissolved under nitrogen protection in 200ml ultra-pure water and makes iron salt
Mixed solution；At 80 DEG C, vigorous magnetic stirs, and the Dilute Ammonia Solution that 2ml mass concentration is 25% is slowly added to iron salt and mixes
Closing in solution, when solution value is increased to 7～8, iron salt hydrolysis produces the Fe3O4 magnetic nano-particle of a large amount of black, continues to drip
Hydro-oxidation helium reacts 3h to pH=9, makes hydrolysis tend to complete；By black Fe3O4Magnetic nano-particle Magnet is from solution separating
Out, milli-Q water, be then dispersed in 200ml ultra-pure water, add 2ml mass concentration be 25% Dilute Ammonia Solution and
1ml oleic acid, stirs 1h in 80 DEG C of constant temperature vigorous magnetic.The most backward solution is slowly added to the concentrated hydrochloric acid that mass concentration is 36%,
Until flask produces lumpy precipitate, use ethanol purge 3 times again after being collected with Magnet by lumpy precipitate, remove unreacted oil
Acid, obtains the Fe of oleic acid modified3O4Magnetic nano-particle；
3) use high-temperature thermal oxidation method, the silicon chip of above-mentioned gained is loaded into high temperature oxidation furnace, in stove, is passed through oxygen, makes silicon
Sheet in oxidation atmosphere, the SiO that the most oxidized generation in surface 5～10nm is thick2, then this silicon chip is put into magnetic control sputtering device
In, utilize reaction magnetocontrol sputtering method to be first deposited with one layer of Al2O3Thin film, thickness about 40nm, then recycling PECVD deposition
One layer of silicon nitride so that it is form SiO2/Al2O3/SiNXOverlayer passivation film；
4) prepare buffer electrode layer: utilize radio frequency magnetron sputtering method, deposit one in silicon chip upper and lower surface respectively
Layer Cr film, thickness is 100nm, as the cushion of upper/lower electrode；
5) prepare electrode: the method using silk screen printing, make upper/lower electrode and the back of the body electricity of black silicon solar cell respectively
, finally black silicon solar cell is sintered, make electrode and silicon form good Ohmic contact, then connect a wire to up and down
Electrode.
Test result:
Black silion cell characteristic in AM1.5 standard analog light source irradiation condition:
Open-circuit voltage is 0.965V, and short circuit current is 58.36mA/cm2, fill factor, curve factor is 80.63%；Black silion cell reflects
Rate is 2.1%.QSSPC is used to measure the carrier lifetime of battery, when injecting carrier concentration △ n=1015cm-3Time, the fewest
Number carrier lifetime is 10.9 μ s.It is 26.58% that test obtains the solar energy conversion efficiency of this LED street lamp, anti-to sunlight
Penetrating rate about 2.1%, through 3000 retests, transformation efficiency variable quantity is less than 14%, and the conversion efficiency of this LED street lamp is high,
Reproducible.
About the device in above-described embodiment, wherein modules performs the concrete mode of operation in relevant the method
Embodiment in be described in detail, explanation will be not set forth in detail herein.
Those skilled in the art, after considering description and putting into practice invention disclosed herein, will readily occur to its of the present invention
Its embodiment.The application is intended to any modification, purposes or the adaptations of the present invention, these modification, purposes or
Person's adaptations is followed the general principle of the present invention and includes the undocumented common knowledge in the art of the application
Or conventional techniques means.Description and embodiments is considered only as exemplary, and true scope and spirit of the invention are by following
Claim is pointed out.
It should be appreciated that the invention is not limited in precision architecture described above and illustrated in the accompanying drawings, and
And various modifications and changes can carried out without departing from the scope.The scope of the present invention is only limited by appended claim.
Claims (3)
1. the self energizing power saws for landscape engineering, it is characterised in that: described power saws includes the electric saw of tubulose
Bar and saw blade；Described electric saw bar includes that motor and solar components, described motor are arranged at the middle position of electric saw bar, institute
Stating solar components and be arranged at the side of electric saw bar, by being wired to motor, the other end of described motor connects to be had
Switch, described switch is arranged at the end free end of electric saw bar.
A kind of self energizing power saws for landscape engineering the most according to claim 1, it is characterised in that: described electricity
Saw rod is transparent tubulose.
A kind of self energizing power saws for landscape engineering the most according to claim 2, it is characterised in that: described saw
Sheet is dentation saw blade.
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| CN102522443A (en) * | 2012-01-13 | 2012-06-27 | 广东志成冠军集团有限公司 | Material for prolonging service life of small amorphous silicon thin film solar cell component and packaging technology for small amorphous silicon thin film solar cell component |
| CN202918753U (en) * | 2012-11-30 | 2013-05-08 | 成都锦汇科技有限公司 | Electric foldable branch trimmer |
| CN202949755U (en) * | 2012-12-07 | 2013-05-29 | 成都锦汇科技有限公司 | Multifunctional solar fruit tree pruning machine |
| JP2014067748A (en) * | 2012-09-24 | 2014-04-17 | Mitsubishi Electric Corp | Substrate for solar cell, method of manufacturing the same, solar cell, and method of manufacturing the same |
| CN104542016A (en) * | 2014-12-25 | 2015-04-29 | 哈尔滨市海江科技开发有限公司 | Large park pruning device |
| CN204305686U (en) * | 2014-12-04 | 2015-05-06 | 王婷 | Be convenient to the electronic trim saw of disposable cleaning |
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2016
- 2016-07-08 CN CN201610547715.8A patent/CN106069239B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522443A (en) * | 2012-01-13 | 2012-06-27 | 广东志成冠军集团有限公司 | Material for prolonging service life of small amorphous silicon thin film solar cell component and packaging technology for small amorphous silicon thin film solar cell component |
| JP2014067748A (en) * | 2012-09-24 | 2014-04-17 | Mitsubishi Electric Corp | Substrate for solar cell, method of manufacturing the same, solar cell, and method of manufacturing the same |
| CN202918753U (en) * | 2012-11-30 | 2013-05-08 | 成都锦汇科技有限公司 | Electric foldable branch trimmer |
| CN202949755U (en) * | 2012-12-07 | 2013-05-29 | 成都锦汇科技有限公司 | Multifunctional solar fruit tree pruning machine |
| CN204305686U (en) * | 2014-12-04 | 2015-05-06 | 王婷 | Be convenient to the electronic trim saw of disposable cleaning |
| CN104542016A (en) * | 2014-12-25 | 2015-04-29 | 哈尔滨市海江科技开发有限公司 | Large park pruning device |
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