CN105895379A - High-efficiency solar panel - Google Patents
High-efficiency solar panel Download PDFInfo
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- CN105895379A CN105895379A CN201610510749.XA CN201610510749A CN105895379A CN 105895379 A CN105895379 A CN 105895379A CN 201610510749 A CN201610510749 A CN 201610510749A CN 105895379 A CN105895379 A CN 105895379A
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- conductive glass
- fto
- fto electro
- dye
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 58
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 claims description 108
- 239000011521 glass Substances 0.000 claims description 98
- 239000000243 solution Substances 0.000 claims description 56
- 239000000975 dye Substances 0.000 claims description 49
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 41
- 239000003792 electrolyte Substances 0.000 claims description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- 238000002360 preparation method Methods 0.000 claims description 28
- 239000008367 deionised water Substances 0.000 claims description 27
- 229910021641 deionized water Inorganic materials 0.000 claims description 27
- 230000007704 transition Effects 0.000 claims description 24
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 15
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 14
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000013019 agitation Methods 0.000 claims description 14
- 239000003599 detergent Substances 0.000 claims description 14
- 229960004756 ethanol Drugs 0.000 claims description 14
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 claims description 14
- 229910052740 iodine Inorganic materials 0.000 claims description 14
- 239000011630 iodine Substances 0.000 claims description 14
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 claims description 14
- 239000011259 mixed solution Substances 0.000 claims description 14
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 claims description 14
- 238000003756 stirring Methods 0.000 claims description 14
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 14
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 13
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 13
- 238000007789 sealing Methods 0.000 claims description 13
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 13
- KPGXUAIFQMJJFB-UHFFFAOYSA-H tungsten hexachloride Chemical compound Cl[W](Cl)(Cl)(Cl)(Cl)Cl KPGXUAIFQMJJFB-UHFFFAOYSA-H 0.000 claims description 12
- 230000003197 catalytic effect Effects 0.000 claims description 11
- 206010070834 Sensitisation Diseases 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- 230000008313 sensitization Effects 0.000 claims description 10
- 230000005693 optoelectronics Effects 0.000 claims description 8
- YSHMQTRICHYLGF-UHFFFAOYSA-N 4-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=NC=C1 YSHMQTRICHYLGF-UHFFFAOYSA-N 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 150000001450 anions Chemical class 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 7
- 239000000428 dust Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 235000010299 hexamethylene tetramine Nutrition 0.000 claims description 7
- 239000004312 hexamethylene tetramine Substances 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 7
- DPKBAXPHAYBPRL-UHFFFAOYSA-M tetrabutylazanium;iodide Chemical compound [I-].CCCC[N+](CCCC)(CCCC)CCCC DPKBAXPHAYBPRL-UHFFFAOYSA-M 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 150000001412 amines Chemical class 0.000 claims 1
- 238000002242 deionisation method Methods 0.000 claims 1
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 238000005303 weighing Methods 0.000 claims 1
- 230000000712 assembly Effects 0.000 abstract 3
- 238000000429 assembly Methods 0.000 abstract 3
- 238000012360 testing method Methods 0.000 description 25
- 239000010408 film Substances 0.000 description 23
- 230000009466 transformation Effects 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000001179 sorption measurement Methods 0.000 description 7
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000003921 oil Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000002929 anti-fatigue Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003471 mutagenic agent Substances 0.000 description 1
- 231100000707 mutagenic chemical Toxicity 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910000045 transition metal hydride Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
- Microelectronics & Electronic Packaging (AREA)
Abstract
The invention relates to a high-efficiency solar panel. The high-efficiency solar panel comprises a connecting box and two or more photovoltaic conversion assemblies, wherein the connecting box comprises two or more positive connection terminals and two or more negative connection terminals; the positive connection terminals of the connecting box are respectively connected to positive electrodes of the corresponding photovoltaic conversion assemblies; the negative connection terminals of the connecting box are respectively connected to negative electrodes of the corresponding photovoltaic conversion assemblies.
Description
Technical field
The application relates to field of solar energy, particularly relates to a kind of high-efficiency solar plate.
Background technology
The energy is the material providing energy to convert to nature, is the material base of mankind's activity.Clean energy resource, also referred to as green energy resource, refer to those energy not discharged pollutants, include water energy, wind energy, solar energy, bioenergy, nuclear energy, geothermal energy etc., and clean energy resource is environmentally friendly, and discharge is few, and pollution level is little.At present, the development and utilization of clean energy resource is becoming the appealing that world is consistent.
Solar energy clean energy resource is that the luminous energy of the sun is converted to the form such as heat energy, electric energy, will not produce other and pollute in energy sources conversion.Currently used most be silica-based solar, the efficiency of its opto-electronic conversion is higher, but, the purification process of silicon can produce environmental pollution, the complex manufacturing technology of silica-based solar cell, expensive.
In the extended family of solaode, DSSC belongs to hybrid inorganic-organic battery, and this type battery electrolyte by light anode, to electrode and sandwich constitutes class sandwich structure；Wherein, light anode is usually by transparency electrode and the TiO on surface thereof2Nano thin-film is constituted, this TiO2Nano thin-film is adsorbed with dyestuff, and dyestuff is mainly used to absorb solar energy；Typically being made up of electrode the catalytic film on electrode and surface thereof, this catalytic film is generally Pt metal.DSSC has the advantages such as technology is simple, with low cost.In the research to DSSC, the conversion efficiency aspect improving photoelectricity is played a significant role by material and the structure of light anode.
Summary of the invention
For overcoming problem present in correlation technique, the application provides a kind of high-efficiency solar plate.
The application is achieved through the following technical solutions:
A kind of high-efficiency solar plate, including: rosette and plural photoelectric conversion component；Described rosette includes that plural anode connection terminal, plural negative pole connect end, and the anode connection terminal of described rosette connects the positive pole of the photoelectric conversion component of correspondence respectively, and negative pole connects the negative pole that end connects the photoelectric conversion component of correspondence respectively.
Preferably, described photoelectric conversion component is based on dye-sensitized solar cells.
Preferably, described dye-sensitized solar cells is by light anode, constitute electrode and electrolyte；Described smooth anode is followed successively by FTO substrate, transition zone, Tungstic anhydride. Seed Layer, Tungstic anhydride. three-dimensional grid nanostructured and dye molecule from outside to inside；Described transition zone is Cr film transition zone；Described Tungstic anhydride. seed layer thickness is 130nm；Described Tungstic anhydride. three-dimensional grid nanostructured uses hydro-thermal method to prepare.
Preferably, the preparation process of described dye-sensitized solar cells is as follows:
S1, prepares light anode
A) FTO substrate is cleaned: FTO conductive glass surface can exist greasy dirt, dust etc. and pollute, first the FTO electro-conductive glass of certain size (10cm × 10cm) is taken, its conducting surface is put into upward in liquid detergent solution, ultrasonic cleaning 30min, then repeatedly rinse for several times with deionized water, until liquid detergent is cleaned up, then, FTO electro-conductive glass is sequentially placed in acetone, ethanol, deionized water ultrasonic cleaning 20min respectively, dries up by nitrogen gun stand-by；
B) transition zone is prepared: the one layer of Cr film of FTO conductive glass surface magnetron sputtering after cleaned, as Tungstic anhydride. three dimensional network structure and the transition zone of FTO electro-conductive glass, Cr film thickness is 50nm；
C) Tungstic anhydride. Seed Layer is prepared: take the sodium tungstate of 0.1mol, the diethanolamine of 0.06mol and 100ml ethanol solution, put it in beaker, in room temperature magnetic agitation 30min so that it is be sufficiently mixed, then beaker is put into magnetic agitation 6h in 80 DEG C of oil baths, obtains seed solution；Take cleaned in step one after FTO electro-conductive glass, slowly entered in seed solution, stand 3min, the most slowly pull-out FTO electro-conductive glass, keeping pull-out speed is 0.05cm/s, being put into by the FTO electro-conductive glass of pull-out subsequently in baking oven and dry, FTO electro-conductive glass is finally put into 300 DEG C of annealing 5h in Muffle furnace, wherein in temperature-rise period, heating rate is 5 DEG C/min；
D) growth Tungstic anhydride. three-dimensional grid nanostructured: preparation is containing tungsten hexachloride, 30mmol sodium tungstate, the hexamethylenetetramine of 45mmol and the deionized water mixed solution of 200ml, be added dropwise over 5ml ammonia and stir, transferring it in autoclave inner bag；Take and be covered with the FTO electro-conductive glass of tungsten oxide Seed Layer and tilt to lean against in the solution of autoclave inner bag, conduction placed face down, after sealing, autoclave is put in the baking oven being warmed up to 95 DEG C, reaction 24h, is down to room temperature naturally after reaction completely, take out FTO electro-conductive glass, use deionized water rinsing 30s, obtain growing the light anode having Tungstic anhydride. three-dimensional grid nanostructured；
S2, preparation electrolyte and dyestuff:
Iodine/iodine three anion electrolyte that electrolyte application is traditional, first weighs the acetonitrile solution of 100ml, is added thereto to the lithium iodide of 0.1M, 0.1M iodine, 0.6M 4-tert .-butylpyridine and the tetrabutylammonium iodide of 0.6M, the ultrasonic 5min of lucifuge so that it is fully dissolve；Then weigh the nano silver particles of 5g, be added in mixed solution, be sufficiently mixed；
Dye solution: weigh N719 powder 50mg, dehydrated alcohol 30ml, N719 is added in dehydrated alcohol, fully dissolve, lucifuge stirring 12h；
S3, encapsulation:
Take the dye solution of preparation in step S2 and put in brown glass ware, then growth have the light anode of Tungstic anhydride. three-dimensional grid nanostructured enter in this brown glass ware, lucifuge is sensitization 3h at 60 DEG C, taking out, be then packaged together with this light anode by the same size FTO electro-conductive glass with Pt Catalytic Layer, encapsulating material uses heat-sealing film, by electrolyte from the aperture injection to electrode one end, encapsulation aperture, connects wire, forms the modified model DSSC of the present invention.
The technical scheme that embodiments herein provides can include following beneficial effect:
1. the dye-sensitized solar cells in the application solar panels, owing to conventional dyes sensitization solar battery using TiO2 nano-particle as the carrier of dyestuff, though grain structure has big specific surface area, but the existence due to grain boundary face, electronics transmits between particles will be through countless interfaces, and this weakens electronics transfer rate in transmitting procedure；In the DSSC of the present invention, light anode construction is direct growth Tungstic anhydride. three-dimensional grid nanostructured on transparent conductive film, it has direct electron transfer pathways, electronics can be collected on electrode along three-dimensional manometer grid, simultaneously because tungsten trioxide nano material belongs to semiconductor material with wide forbidden band, there is high electric conductivity, in terms of structure and material, therefore all substantially increase the efficiency of transmission of electronics.
2. Tungstic anhydride. three-dimensional grid nanostructured has bigger specific surface area, can be greatly improved the adsorption efficiency of dyestuff, dyestuff is optically excited generation electronics, and sufficient dye adsorption amount can produce photon in a large number, increase density of photocurrent, and then the conversion efficiency of sunlight can be improved.
One layer of Cr metal is added between FTO substrate and the tungsten oxide three-dimensional grid nanostructured of the most smooth anode, it is as the transition zone of electronics conduction, avoid contact resistance bigger between nanostructured and substrate, in addition, add nano-Ag particles in the electrolytic solution, nano-Ag particles contributes to sunlight scattering in the electrolytic solution, increases the probability that dyestuff absorbs, it is possible to increase electricity conversion.
4. in the modified model light anode construction of present invention design, Tungstic anhydride. three-dimensional grid nanostructured uses hydro-thermal method to prepare, and this preparation method is simple, with low cost, has the potentiality of actual application on a large scale.
Aspect and advantage that the application adds will part be given in the following description, and part will become apparent from the description below, or is recognized by the practice of the application.It should be appreciated that it is only exemplary and explanatory that above general description and details hereinafter describe, the application can not be limited.
Accompanying drawing explanation
Accompanying drawing herein is merged in description and constitutes the part of this specification, it is shown that meet embodiments of the invention, and for explaining the principle of the present invention together with description.
Fig. 1 is the flow chart of the manufacture method of dye-sensitized solar cells described in the application solar panels.
Detailed description of the invention
Here will illustrate exemplary embodiment in detail, its example represents in the accompanying drawings.When explained below relates to accompanying drawing, unless otherwise indicated, the same numbers in different accompanying drawings represents same or analogous key element.Embodiment described in following exemplary embodiment does not represent all embodiments consistent with the present invention.On the contrary, they only with describe in detail in appended claims, the present invention some in terms of the example of consistent apparatus and method.
Following disclosure provides many different embodiments or example for realizing the different structure of the application.In order to simplify disclosure herein, hereinafter parts and setting to specific examples are described.Certainly, they are the most merely illustrative, and are not intended to limit the application.Additionally, the application can in different examples repeat reference numerals and/or letter.This repetition is for purposes of simplicity and clarity, itself is more than the relation between various embodiment being discussed and/or arranging.Additionally, the various specific technique that this application provides and the example of material, but those of ordinary skill in the art are it can be appreciated that the applicability of other techniques and/or the use of other materials.Additionally, fisrt feature described below Second Eigenvalue " on " structure can include that the first and second features are formed as the embodiment directly contacted, can also include that the embodiment that other feature is formed between the first and second features, such first and second features are not likely to be directly contact.
In the description of the present application, it should be noted that, unless otherwise prescribed and limit, term " is installed ", " being connected ", " connection " should be interpreted broadly, such as, can be to be mechanically connected or electrical connection, can also be the connection of two element internals, can be to be joined directly together, it is also possible to be indirectly connected to by intermediary, for the ordinary skill in the art, the concrete meaning of above-mentioned term can be understood as the case may be.
The energy is the material providing energy to convert to nature, is the material base of mankind's activity.Clean energy resource, also referred to as green energy resource, refer to those energy not discharged pollutants, include water energy, wind energy, solar energy, bioenergy, nuclear energy, geothermal energy etc., and clean energy resource is environmentally friendly, and discharge is few, and pollution level is little.At present, the development and utilization of clean energy resource is becoming the appealing that world is consistent.
Solar energy clean energy resource is that the luminous energy of the sun is converted to the form such as heat energy, electric energy, will not produce other and pollute in energy sources conversion.Currently used most be silica-based solar, the efficiency of its opto-electronic conversion is higher, but, the purification process of silicon can produce environmental pollution, the complex manufacturing technology of silica-based solar cell, expensive.
In the extended family of solaode, DSSC belongs to hybrid inorganic-organic battery, and this type battery electrolyte by light anode, to electrode and sandwich constitutes class sandwich structure；Wherein, light anode is usually by transparency electrode and the TiO on surface thereof2Nano thin-film is constituted, this TiO2Nano thin-film is adsorbed with dyestuff, and dyestuff is mainly used to absorb solar energy；Typically being made up of electrode the catalytic film on electrode and surface thereof, this catalytic film is generally Pt metal.DSSC has the advantages such as technology is simple, with low cost.In the research to DSSC, the conversion efficiency aspect improving photoelectricity is played a significant role by material and the structure of light anode.
Tungsten belongs to transition metal, and Tungstic anhydride. is the highest oxidation state of tungsten, fully meets stoichiometric proportion, Tungstic anhydride. is a kind of typical wide bandgap semiconductor functional material, and it is in gas detecting, optical, electrical mutagens color, photocatalysis, the aspect such as electrochemistry has the performance of excellence.
Below in conjunction with embodiment, the present invention is described further.
Embodiment one:
A kind of high-efficiency solar plate, including: rosette and plural photoelectric conversion component；Described rosette includes that plural anode connection terminal, plural negative pole connect end, and the anode connection terminal of described rosette connects the positive pole of the photoelectric conversion component of correspondence respectively, and negative pole connects the negative pole that end connects the photoelectric conversion component of correspondence respectively.
Preferably, described photoelectric conversion component is based on dye-sensitized solar cells.
Preferably, described dye-sensitized solar cells is by light anode, constitute electrode and electrolyte；Described smooth anode is followed successively by FTO substrate, transition zone, Tungstic anhydride. Seed Layer, Tungstic anhydride. three-dimensional grid nanostructured and dye molecule from outside to inside；Described transition zone is Cr film transition zone；Described Tungstic anhydride. seed layer thickness is 130nm；Described Tungstic anhydride. three-dimensional grid nanostructured uses hydro-thermal method to prepare.
Preferably, in conjunction with Fig. 1, the preparation process of described dye-sensitized solar cells is as follows:
S1, prepares light anode
A) FTO substrate is cleaned: FTO conductive glass surface can exist greasy dirt, dust etc. and pollute, first the FTO electro-conductive glass of certain size (10cm × 10cm) is taken, its conducting surface is put into upward in liquid detergent solution, ultrasonic cleaning 30min, then repeatedly rinse for several times with deionized water, until liquid detergent is cleaned up, then, FTO electro-conductive glass is sequentially placed in acetone, ethanol, deionized water ultrasonic cleaning 20min respectively, dries up by nitrogen gun stand-by；
B) transition zone is prepared: the one layer of Cr film of FTO conductive glass surface magnetron sputtering after cleaned, as Tungstic anhydride. three dimensional network structure and the transition zone of FTO electro-conductive glass, Cr film thickness is 50nm；
C) Tungstic anhydride. Seed Layer is prepared: take the sodium tungstate of 0.1mol, the diethanolamine of 0.06mol and 100ml ethanol solution, put it in beaker, in room temperature magnetic agitation 30min so that it is be sufficiently mixed, then beaker is put into magnetic agitation 6h in 80 DEG C of oil baths, obtains seed solution；Take cleaned in step one after FTO electro-conductive glass, slowly entered in seed solution, stand 3min, the most slowly pull-out FTO electro-conductive glass, keeping pull-out speed is 0.05cm/s, being put into by the FTO electro-conductive glass of pull-out subsequently in baking oven and dry, FTO electro-conductive glass is finally put into 300 DEG C of annealing 5h in Muffle furnace, wherein in temperature-rise period, heating rate is 5 DEG C/min；
D) growth Tungstic anhydride. three-dimensional grid nanostructured: preparation is containing tungsten hexachloride, 30mmol sodium tungstate, the hexamethylenetetramine of 45mmol and the deionized water mixed solution of 200ml, be added dropwise over 5ml ammonia and stir, transferring it in autoclave inner bag；Take and be covered with the FTO electro-conductive glass of tungsten oxide Seed Layer and tilt to lean against in the solution of autoclave inner bag, conduction placed face down, after sealing, autoclave is put in the baking oven being warmed up to 95 DEG C, reaction 24h, is down to room temperature naturally after reaction completely, take out FTO electro-conductive glass, use deionized water rinsing 30s, obtain growing the light anode having Tungstic anhydride. three-dimensional grid nanostructured；
S2, preparation electrolyte and dyestuff:
Iodine/iodine three anion electrolyte that electrolyte application is traditional, first weighs the acetonitrile solution of 100ml, is added thereto to the lithium iodide of 0.1M, 0.1M iodine, 0.6M 4-tert .-butylpyridine and the tetrabutylammonium iodide of 0.6M, the ultrasonic 5min of lucifuge so that it is fully dissolve；Then weigh the nano silver particles of 5g, be added in mixed solution, be sufficiently mixed；
Dye solution: weigh N719 powder 50mg, dehydrated alcohol 30ml, N719 is added in dehydrated alcohol, fully dissolve, lucifuge stirring 12h；
S3, encapsulation:
Take the dye solution of preparation in step S2 and put in brown glass ware, then growth have the light anode of Tungstic anhydride. three-dimensional grid nanostructured enter in this brown glass ware, lucifuge is sensitization 3h at 60 DEG C, taking out, be then packaged together with this light anode by the same size FTO electro-conductive glass with Pt Catalytic Layer, encapsulating material uses heat-sealing film, by electrolyte from the aperture injection to electrode one end, encapsulation aperture, connects wire, forms the modified model DSSC of the present invention.
Preferably, in described dye-sensitized solar cells, through Hydrothermal Growth, in FTO substrate, growing one layer of Tungstic anhydride. network, when wherein tungsten hexachloride content is 120mmol, nanometer web thickness is 6 μm.Tungsten oxide nanometer three dimensional structure is hollow network-like, and wherein, a diameter of 40nm of network, centre can adsorb hiding a large amount of dye molecule, and dye adsorption amount is 0.189 × 10-6mol/cm2。
Dye cell structure of the present invention is carried out opto-electronic conversion test, and test condition is AM1.5 optical power density 100mW/cm2, test finds, short circuit current is 15.4mA/cm2, open-circuit voltage is 0.6V, and photoelectric transformation efficiency reaches 9.1%.Resisting fatigue is tested, and in the case of follow-on test 1000h, photoelectric transformation efficiency compares and have dropped 3.1%, better working stability.
By test, the solar panels of the present invention, preparation process is simple, and anti-fatigue ability is strong, and photoelectric transformation efficiency is higher, possesses certain actual application potential.
Embodiment two:
A kind of high-efficiency solar plate, including: rosette and plural photoelectric conversion component；Described rosette includes that plural anode connection terminal, plural negative pole connect end, and the anode connection terminal of described rosette connects the positive pole of the photoelectric conversion component of correspondence respectively, and negative pole connects the negative pole that end connects the photoelectric conversion component of correspondence respectively.
Preferably, described photoelectric conversion component is based on dye-sensitized solar cells.
Preferably, described dye-sensitized solar cells is by light anode, constitute electrode and electrolyte；Described smooth anode is followed successively by FTO substrate, transition zone, Tungstic anhydride. Seed Layer, Tungstic anhydride. three-dimensional grid nanostructured and dye molecule from outside to inside；Described transition zone is Cr film transition zone；Described Tungstic anhydride. seed layer thickness is 130nm；Described Tungstic anhydride. three-dimensional grid nanostructured uses hydro-thermal method to prepare.
Preferably, in conjunction with Fig. 1, the preparation process of described dye-sensitized solar cells is as follows:
S1, prepares light anode
A) FTO substrate is cleaned: FTO conductive glass surface can exist greasy dirt, dust etc. and pollute, first the FTO electro-conductive glass of certain size (10cm × 10cm) is taken, its conducting surface is put into upward in liquid detergent solution, ultrasonic cleaning 30min, then repeatedly rinse for several times with deionized water, until liquid detergent is cleaned up, then, FTO electro-conductive glass is sequentially placed in acetone, ethanol, deionized water ultrasonic cleaning 20min respectively, dries up by nitrogen gun stand-by；
B) transition zone is prepared: the one layer of Cr film of FTO conductive glass surface magnetron sputtering after cleaned, as Tungstic anhydride. three dimensional network structure and the transition zone of FTO electro-conductive glass, Cr film thickness is 50nm；
C) Tungstic anhydride. Seed Layer is prepared: take the sodium tungstate of 0.1mol, the diethanolamine of 0.06mol and 100ml ethanol solution, put it in beaker, in room temperature magnetic agitation 30min so that it is be sufficiently mixed, then beaker is put into magnetic agitation 6h in 80 DEG C of oil baths, obtains seed solution；Take cleaned in step one after FTO electro-conductive glass, slowly entered in seed solution, stand 3min, the most slowly pull-out FTO electro-conductive glass, keeping pull-out speed is 0.05cm/s, being put into by the FTO electro-conductive glass of pull-out subsequently in baking oven and dry, FTO electro-conductive glass is finally put into 300 DEG C of annealing 5h in Muffle furnace, wherein in temperature-rise period, heating rate is 5 DEG C/min；
D) growth Tungstic anhydride. three-dimensional grid nanostructured: preparation is containing tungsten hexachloride, 30mmol sodium tungstate, the hexamethylenetetramine of 45mmol and the deionized water mixed solution of 200ml, be added dropwise over 5ml ammonia and stir, transferring it in autoclave inner bag；Take and be covered with the FTO electro-conductive glass of tungsten oxide Seed Layer and tilt to lean against in the solution of autoclave inner bag, conduction placed face down, after sealing, autoclave is put in the baking oven being warmed up to 95 DEG C, reaction 24h, is down to room temperature naturally after reaction completely, take out FTO electro-conductive glass, use deionized water rinsing 30s, obtain growing the light anode having Tungstic anhydride. three-dimensional grid nanostructured；
S2, preparation electrolyte and dyestuff:
Iodine/iodine three anion electrolyte that electrolyte application is traditional, first weighs the acetonitrile solution of 100ml, is added thereto to the lithium iodide of 0.1M, 0.1M iodine, 0.6M 4-tert .-butylpyridine and the tetrabutylammonium iodide of 0.6M, the ultrasonic 5min of lucifuge so that it is fully dissolve；Then weigh the nano silver particles of 5g, be added in mixed solution, be sufficiently mixed；
Dye solution: weigh N719 powder 50mg, dehydrated alcohol 30ml, N719 is added in dehydrated alcohol, fully dissolve, lucifuge stirring 12h；
S3, encapsulation:
Take the dye solution of preparation in step S2 and put in brown glass ware, then growth have the light anode of Tungstic anhydride. three-dimensional grid nanostructured enter in this brown glass ware, lucifuge is sensitization 3h at 60 DEG C, taking out, be then packaged together with this light anode by the same size FTO electro-conductive glass with Pt Catalytic Layer, encapsulating material uses heat-sealing film, by electrolyte from the aperture injection to electrode one end, encapsulation aperture, connects wire, forms the modified model DSSC of the present invention.
Preferably, in described dye-sensitized solar cells, through Hydrothermal Growth, in FTO substrate, growing one layer of Tungstic anhydride. network, when wherein tungsten hexachloride content is 130mmol, nanometer web thickness is 5 μm.Tungsten oxide nanometer three dimensional structure is hollow network-like, and wherein, a diameter of 40nm of network, centre can adsorb hiding a large amount of dye molecule, and dye adsorption amount is 0.189 × 10-6mol/cm2。
Dye cell structure of the present invention is carried out opto-electronic conversion test, and test condition is AM1.5 optical power density 100mW/cm2, test finds, short circuit current is 15.4mA/cm2, open-circuit voltage is 0.6V, and photoelectric transformation efficiency reaches 8.3%.Resisting fatigue is tested, and in the case of follow-on test 1000h, photoelectric transformation efficiency compares and have dropped 3.5%, better working stability.
By test, the solar panels of the present invention, preparation process is simple, and anti-fatigue ability is strong, and photoelectric transformation efficiency is higher, possesses certain actual application potential.
Embodiment three:
A kind of high-efficiency solar plate, including: rosette and plural photoelectric conversion component；Described rosette includes that plural anode connection terminal, plural negative pole connect end, and the anode connection terminal of described rosette connects the positive pole of the photoelectric conversion component of correspondence respectively, and negative pole connects the negative pole that end connects the photoelectric conversion component of correspondence respectively.
Preferably, described photoelectric conversion component is based on dye-sensitized solar cells.
Preferably, described dye-sensitized solar cells is by light anode, constitute electrode and electrolyte；Described smooth anode is followed successively by FTO substrate, transition zone, Tungstic anhydride. Seed Layer, Tungstic anhydride. three-dimensional grid nanostructured and dye molecule from outside to inside；Described transition zone is Cr film transition zone；Described Tungstic anhydride. seed layer thickness is 130nm；Described Tungstic anhydride. three-dimensional grid nanostructured uses hydro-thermal method to prepare.
Preferably, in conjunction with Fig. 1, the preparation process of described dye-sensitized solar cells is as follows:
S1, prepares light anode
A) FTO substrate is cleaned: FTO conductive glass surface can exist greasy dirt, dust etc. and pollute, first the FTO electro-conductive glass of certain size (10cm × 10cm) is taken, its conducting surface is put into upward in liquid detergent solution, ultrasonic cleaning 30min, then repeatedly rinse for several times with deionized water, until liquid detergent is cleaned up, then, FTO electro-conductive glass is sequentially placed in acetone, ethanol, deionized water ultrasonic cleaning 20min respectively, dries up by nitrogen gun stand-by；
B) transition zone is prepared: the one layer of Cr film of FTO conductive glass surface magnetron sputtering after cleaned, as Tungstic anhydride. three dimensional network structure and the transition zone of FTO electro-conductive glass, Cr film thickness is 50nm；
C) Tungstic anhydride. Seed Layer is prepared: take the sodium tungstate of 0.1mol, the diethanolamine of 0.06mol and 100ml ethanol solution, put it in beaker, in room temperature magnetic agitation 30min so that it is be sufficiently mixed, then beaker is put into magnetic agitation 6h in 80 DEG C of oil baths, obtains seed solution；Take cleaned in step one after FTO electro-conductive glass, slowly entered in seed solution, stand 3min, the most slowly pull-out FTO electro-conductive glass, keeping pull-out speed is 0.05cm/s, being put into by the FTO electro-conductive glass of pull-out subsequently in baking oven and dry, FTO electro-conductive glass is finally put into 300 DEG C of annealing 5h in Muffle furnace, wherein in temperature-rise period, heating rate is 5 DEG C/min；
D) growth Tungstic anhydride. three-dimensional grid nanostructured: preparation is containing tungsten hexachloride, 30mmol sodium tungstate, the hexamethylenetetramine of 45mmol and the deionized water mixed solution of 200ml, be added dropwise over 5ml ammonia and stir, transferring it in autoclave inner bag；Take and be covered with the FTO electro-conductive glass of tungsten oxide Seed Layer and tilt to lean against in the solution of autoclave inner bag, conduction placed face down, after sealing, autoclave is put in the baking oven being warmed up to 95 DEG C, reaction 24h, is down to room temperature naturally after reaction completely, take out FTO electro-conductive glass, use deionized water rinsing 30s, obtain growing the light anode having Tungstic anhydride. three-dimensional grid nanostructured；
S2, preparation electrolyte and dyestuff:
Iodine/iodine three anion electrolyte that electrolyte application is traditional, first weighs the acetonitrile solution of 100ml, is added thereto to the lithium iodide of 0.1M, 0.1M iodine, 0.6M 4-tert .-butylpyridine and the tetrabutylammonium iodide of 0.6M, the ultrasonic 5min of lucifuge so that it is fully dissolve；Then weigh the nano silver particles of 5g, be added in mixed solution, be sufficiently mixed；
Dye solution: weigh N719 powder 50mg, dehydrated alcohol 30ml, N719 is added in dehydrated alcohol, fully dissolve, lucifuge stirring 12h；
S3, encapsulation:
Take the dye solution of preparation in step S2 and put in brown glass ware, then growth have the light anode of Tungstic anhydride. three-dimensional grid nanostructured enter in this brown glass ware, lucifuge is sensitization 3h at 60 DEG C, taking out, be then packaged together with this light anode by the same size FTO electro-conductive glass with Pt Catalytic Layer, encapsulating material uses heat-sealing film, by electrolyte from the aperture injection to electrode one end, encapsulation aperture, connects wire, forms the modified model DSSC of the present invention.
Preferably, in described dye-sensitized solar cells, through Hydrothermal Growth, in FTO substrate, growing one layer of Tungstic anhydride. network, when wherein tungsten hexachloride content is 140mmol, nanometer web thickness is 7 μm.Tungsten oxide nanometer three dimensional structure is hollow network-like, and wherein, a diameter of 40nm of network, centre can adsorb hiding a large amount of dye molecule, and dye adsorption amount is 0.189 × 10-6mol/cm2。
Dye cell structure of the present invention is carried out opto-electronic conversion test, and test condition is AM1.5 optical power density 100mW/cm2, test finds, short circuit current is 15.4mA/cm2, open-circuit voltage is 0.6V, and photoelectric transformation efficiency reaches 7.8%.Resisting fatigue is tested, and in the case of follow-on test 1000h, photoelectric transformation efficiency compares and have dropped 5.1%, better working stability.
By test, the solar panels of the present invention, preparation process is simple, and anti-fatigue ability is strong, and photoelectric transformation efficiency is higher, possesses certain actual application potential.
Embodiment four:
A kind of high-efficiency solar plate, including: rosette and plural photoelectric conversion component；Described rosette includes that plural anode connection terminal, plural negative pole connect end, and the anode connection terminal of described rosette connects the positive pole of the photoelectric conversion component of correspondence respectively, and negative pole connects the negative pole that end connects the photoelectric conversion component of correspondence respectively.
Preferably, described photoelectric conversion component is based on dye-sensitized solar cells.
Preferably, described dye-sensitized solar cells is by light anode, constitute electrode and electrolyte；Described smooth anode is followed successively by FTO substrate, transition zone, Tungstic anhydride. Seed Layer, Tungstic anhydride. three-dimensional grid nanostructured and dye molecule from outside to inside；Described transition zone is Cr film transition zone；Described Tungstic anhydride. seed layer thickness is 130nm；Described Tungstic anhydride. three-dimensional grid nanostructured uses hydro-thermal method to prepare.
Preferably, in conjunction with Fig. 1, the preparation process of described dye-sensitized solar cells is as follows:
S1, prepares light anode
A) FTO substrate is cleaned: FTO conductive glass surface can exist greasy dirt, dust etc. and pollute, first the FTO electro-conductive glass of certain size (10cm × 10cm) is taken, its conducting surface is put into upward in liquid detergent solution, ultrasonic cleaning 30min, then repeatedly rinse for several times with deionized water, until liquid detergent is cleaned up, then, FTO electro-conductive glass is sequentially placed in acetone, ethanol, deionized water ultrasonic cleaning 20min respectively, dries up by nitrogen gun stand-by；
B) transition zone is prepared: the one layer of Cr film of FTO conductive glass surface magnetron sputtering after cleaned, as Tungstic anhydride. three dimensional network structure and the transition zone of FTO electro-conductive glass, Cr film thickness is 50nm；
C) Tungstic anhydride. Seed Layer is prepared: take the sodium tungstate of 0.1mol, the diethanolamine of 0.06mol and 100ml ethanol solution, put it in beaker, in room temperature magnetic agitation 30min so that it is be sufficiently mixed, then beaker is put into magnetic agitation 6h in 80 DEG C of oil baths, obtains seed solution；Take cleaned in step one after FTO electro-conductive glass, slowly entered in seed solution, stand 3min, the most slowly pull-out FTO electro-conductive glass, keeping pull-out speed is 0.05cm/s, being put into by the FTO electro-conductive glass of pull-out subsequently in baking oven and dry, FTO electro-conductive glass is finally put into 300 DEG C of annealing 5h in Muffle furnace, wherein in temperature-rise period, heating rate is 5 DEG C/min；
D) growth Tungstic anhydride. three-dimensional grid nanostructured: preparation is containing tungsten hexachloride, 30mmol sodium tungstate, the hexamethylenetetramine of 45mmol and the deionized water mixed solution of 200ml, be added dropwise over 5ml ammonia and stir, transferring it in autoclave inner bag；Take and be covered with the FTO electro-conductive glass of tungsten oxide Seed Layer and tilt to lean against in the solution of autoclave inner bag, conduction placed face down, after sealing, autoclave is put in the baking oven being warmed up to 95 DEG C, reaction 24h, is down to room temperature naturally after reaction completely, take out FTO electro-conductive glass, use deionized water rinsing 30s, obtain growing the light anode having Tungstic anhydride. three-dimensional grid nanostructured；
S2, preparation electrolyte and dyestuff:
Iodine/iodine three anion electrolyte that electrolyte application is traditional, first weighs the acetonitrile solution of 100ml, is added thereto to the lithium iodide of 0.1M, 0.1M iodine, 0.6M 4-tert .-butylpyridine and the tetrabutylammonium iodide of 0.6M, the ultrasonic 5min of lucifuge so that it is fully dissolve；Then weigh the nano silver particles of 5g, be added in mixed solution, be sufficiently mixed；
Dye solution: weigh N719 powder 50mg, dehydrated alcohol 30ml, N719 is added in dehydrated alcohol, fully dissolve, lucifuge stirring 12h；
S3, encapsulation:
Take the dye solution of preparation in step S2 and put in brown glass ware, then growth have the light anode of Tungstic anhydride. three-dimensional grid nanostructured enter in this brown glass ware, lucifuge is sensitization 3h at 60 DEG C, taking out, be then packaged together with this light anode by the same size FTO electro-conductive glass with Pt Catalytic Layer, encapsulating material uses heat-sealing film, by electrolyte from the aperture injection to electrode one end, encapsulation aperture, connects wire, forms the modified model DSSC of the present invention.
Preferably, in described dye-sensitized solar cells,
Through Hydrothermal Growth, in FTO substrate, growing one layer of Tungstic anhydride. network, when wherein tungsten hexachloride content is 150mmol, nanometer web thickness is 10 μm.Tungsten oxide nanometer three dimensional structure is hollow network-like, and wherein, a diameter of 40nm of network, centre can adsorb hiding a large amount of dye molecule, and dye adsorption amount is 0.189 × 10-6mol/cm2。
Dye cell structure of the present invention is carried out opto-electronic conversion test, and test condition is AM1.5 optical power density 100mW/cm2, test finds, short circuit current is 15.4mA/cm2, open-circuit voltage is 0.6V, and photoelectric transformation efficiency reaches 7.3%.Resisting fatigue is tested, and in the case of follow-on test 1000h, photoelectric transformation efficiency compares and have dropped 3.1%, better working stability.
By test, the solar panels of the present invention, preparation process is simple, and anti-fatigue ability is strong, and photoelectric transformation efficiency is higher, possesses certain actual application potential.
Embodiment five:
A kind of high-efficiency solar plate, including: rosette and plural photoelectric conversion component；Described rosette includes that plural anode connection terminal, plural negative pole connect end, and the anode connection terminal of described rosette connects the positive pole of the photoelectric conversion component of correspondence respectively, and negative pole connects the negative pole that end connects the photoelectric conversion component of correspondence respectively.
Preferably, described photoelectric conversion component is based on dye-sensitized solar cells.
Preferably, described dye-sensitized solar cells is by light anode, constitute electrode and electrolyte；Described smooth anode is followed successively by FTO substrate, transition zone, Tungstic anhydride. Seed Layer, Tungstic anhydride. three-dimensional grid nanostructured and dye molecule from outside to inside；Described transition zone is Cr film transition zone；Described Tungstic anhydride. seed layer thickness is 130nm；Described Tungstic anhydride. three-dimensional grid nanostructured uses hydro-thermal method to prepare.
Preferably, in conjunction with Fig. 1, the preparation process of described dye-sensitized solar cells is as follows:
S1, prepares light anode
A) FTO substrate is cleaned: FTO conductive glass surface can exist greasy dirt, dust etc. and pollute, first the FTO electro-conductive glass of certain size (10cm × 10cm) is taken, its conducting surface is put into upward in liquid detergent solution, ultrasonic cleaning 30min, then repeatedly rinse for several times with deionized water, until liquid detergent is cleaned up, then, FTO electro-conductive glass is sequentially placed in acetone, ethanol, deionized water ultrasonic cleaning 20min respectively, dries up by nitrogen gun stand-by；
B) transition zone is prepared: the one layer of Cr film of FTO conductive glass surface magnetron sputtering after cleaned, as Tungstic anhydride. three dimensional network structure and the transition zone of FTO electro-conductive glass, Cr film thickness is 50nm；
C) Tungstic anhydride. Seed Layer is prepared: take the sodium tungstate of 0.1mol, the diethanolamine of 0.06mol and 100ml ethanol solution, put it in beaker, in room temperature magnetic agitation 30min so that it is be sufficiently mixed, then beaker is put into magnetic agitation 6h in 80 DEG C of oil baths, obtains seed solution；Take cleaned in step one after FTO electro-conductive glass, slowly entered in seed solution, stand 3min, the most slowly pull-out FTO electro-conductive glass, keeping pull-out speed is 0.05cm/s, being put into by the FTO electro-conductive glass of pull-out subsequently in baking oven and dry, FTO electro-conductive glass is finally put into 300 DEG C of annealing 5h in Muffle furnace, wherein in temperature-rise period, heating rate is 5 DEG C/min；
D) growth Tungstic anhydride. three-dimensional grid nanostructured: preparation is containing tungsten hexachloride, 30mmol sodium tungstate, the hexamethylenetetramine of 45mmol and the deionized water mixed solution of 200ml, be added dropwise over 5ml ammonia and stir, transferring it in autoclave inner bag；Take and be covered with the FTO electro-conductive glass of tungsten oxide Seed Layer and tilt to lean against in the solution of autoclave inner bag, conduction placed face down, after sealing, autoclave is put in the baking oven being warmed up to 95 DEG C, reaction 24h, is down to room temperature naturally after reaction completely, take out FTO electro-conductive glass, use deionized water rinsing 30s, obtain growing the light anode having Tungstic anhydride. three-dimensional grid nanostructured；
S2, preparation electrolyte and dyestuff:
Iodine/iodine three anion electrolyte that electrolyte application is traditional, first weighs the acetonitrile solution of 100ml, is added thereto to the lithium iodide of 0.1M, 0.1M iodine, 0.6M 4-tert .-butylpyridine and the tetrabutylammonium iodide of 0.6M, the ultrasonic 5min of lucifuge so that it is fully dissolve；Then weigh the nano silver particles of 5g, be added in mixed solution, be sufficiently mixed；
Dye solution: weigh N719 powder 50mg, dehydrated alcohol 30ml, N719 is added in dehydrated alcohol, fully dissolve, lucifuge stirring 12h；
S3, encapsulation:
Take the dye solution of preparation in step S2 and put in brown glass ware, then growth have the light anode of Tungstic anhydride. three-dimensional grid nanostructured enter in this brown glass ware, lucifuge is sensitization 3h at 60 DEG C, taking out, be then packaged together with this light anode by the same size FTO electro-conductive glass with Pt Catalytic Layer, encapsulating material uses heat-sealing film, by electrolyte from the aperture injection to electrode one end, encapsulation aperture, connects wire, forms the modified model DSSC of the present invention.
Preferably, in described dye-sensitized solar cells, through Hydrothermal Growth, in FTO substrate, growing one layer of Tungstic anhydride. network, when wherein tungsten hexachloride content is 160mmol, nanometer web thickness is 15 μm.Tungsten oxide nanometer three dimensional structure is hollow network-like, and wherein, a diameter of 40nm of network, centre can adsorb hiding a large amount of dye molecule, and dye adsorption amount is 0.189 × 10-6mol/cm2。
Dye cell structure of the present invention is carried out opto-electronic conversion test, and test condition is AM1.5 optical power density 100mW/cm2, test finds, short circuit current is 15.4mA/cm2, open-circuit voltage is 0.6V, and photoelectric transformation efficiency reaches 6.5%.Resisting fatigue is tested, and in the case of follow-on test 1000h, photoelectric transformation efficiency compares and have dropped 3.1%, better working stability.
By test, the solar panels of the present invention, preparation process is simple, and anti-fatigue ability is strong, and photoelectric transformation efficiency is higher, possesses certain actual application potential.
Those skilled in the art, after considering description and putting into practice invention disclosed herein, will readily occur to other embodiments of the present invention.The application is intended to any modification, purposes or the adaptations of the present invention, and these modification, purposes or adaptations are followed the general principle of the present invention and include the undocumented common knowledge in the art of the application or conventional techniques means.Description and embodiments is considered only as exemplary, and true scope and spirit of the invention are pointed out by claim below.
It should be appreciated that the invention is not limited in precision architecture described above and illustrated in the accompanying drawings, and various modifications and changes can carried out without departing from the scope.The scope of the present invention is only limited by appended claim.
Claims (4)
1. a high-efficiency solar plate, including: rosette and plural photoelectric conversion component；
Described rosette include plural anode connection terminal, plural negative pole connect end, described in connect
The anode connection terminal of line box connects the positive pole of the photoelectric conversion component of correspondence respectively, and negative pole connects end respectively
Connect the negative pole of corresponding photoelectric conversion component.
Photoelectric conversion component the most according to claim 1, it is characterised in that described opto-electronic conversion
Assembly is based on dye-sensitized solar cells.
Dye-sensitized solar cells the most according to claim 2, it is characterised in that described dyestuff
Sensitization solar cell is by light anode, constitute electrode and electrolyte；Described smooth anode is the most successively
For FTO substrate, transition zone, Tungstic anhydride. Seed Layer, Tungstic anhydride. three-dimensional grid nanostructured and
Dye molecule；Described transition zone is Cr film transition zone；Described Tungstic anhydride. seed layer thickness is 130nm；
Described Tungstic anhydride. three-dimensional grid nanostructured uses hydro-thermal method to prepare.
Dye-sensitized solar cells the most according to claim 3, it is characterised in that described dyestuff
The preparation process of sensitization solar cell is as follows:
S1, prepares light anode
A) FTO substrate is cleaned: FTO conductive glass surface can exist greasy dirt, dust etc. and pollute,
First take the FTO electro-conductive glass of certain size (10cm × 10cm), its conducting surface is put into upward
In liquid detergent solution, ultrasonic cleaning 30min, then repeatedly rinse for several times with deionized water, until will
Liquid detergent cleans up, and then, FTO electro-conductive glass is sequentially placed into acetone, ethanol, deionization
In water, difference ultrasonic cleaning 20min, dries up stand-by by nitrogen gun；
B) transition zone is prepared: the one layer of Cr of FTO conductive glass surface magnetron sputtering after cleaned
Film, as Tungstic anhydride. three dimensional network structure and the transition zone of FTO electro-conductive glass, Cr film thickness is
50nm；
C) Tungstic anhydride. Seed Layer is prepared: take the diethanol of the sodium tungstate of 0.1mol, 0.06mol
Amine and 100ml ethanol solution, put it in beaker, in room temperature magnetic agitation 30min, makes
It is sufficiently mixed, and then beaker is put into magnetic agitation 6h in 80 DEG C of oil baths, obtains seed solution；
Take cleaned in step one after FTO electro-conductive glass, slowly entered in seed solution, stand 3
Min, the most slowly pull-out FTO electro-conductive glass, keeping pull-out speed is 0.05cm/s, will draw subsequently
The FTO electro-conductive glass gone out is put in baking oven and is dried, and is finally put in Muffle furnace by FTO electro-conductive glass
300 DEG C of annealing 5h, wherein in temperature-rise period, heating rate is 5 DEG C/min；
D) growth Tungstic anhydride. three-dimensional grid nanostructured: preparation is containing tungsten hexachloride, 30mmol
Sodium tungstate, the hexamethylenetetramine of 45mmol and the deionized water mixed solution of 200ml, dropwise add
Enter 5ml ammonia and stir, transferring it in autoclave inner bag；Take and be covered with tungsten oxide Seed Layer
FTO electro-conductive glass tilt to lean against in the solution of autoclave inner bag, conduct electricity placed face down, seal
After, autoclave is put in the baking oven being warmed up to 95 DEG C, react 24h, after reaction completely certainly
So being down to room temperature, take out FTO electro-conductive glass, use deionized water rinsing 30s, obtaining growth has three oxygen
Change the light anode of tungsten three-dimensional grid nanostructured；
S2, preparation electrolyte and dyestuff:
Iodine/iodine three anion electrolyte that electrolyte application is traditional, the acetonitrile first weighing 100ml is molten
Liquid, is added thereto to the lithium iodide of 0.1M, 0.1M iodine, 0.6M 4-tert .-butylpyridine and 0.6
The tetrabutylammonium iodide of M, the ultrasonic 5min of lucifuge so that it is fully dissolve；Then the nanometer of 5g is weighed
Silver particles, is added in mixed solution, is sufficiently mixed；
Dye solution: weigh N719 powder 50mg, dehydrated alcohol 30ml, N719 is added nothing
In water-ethanol, fully dissolve, lucifuge stirring 12h；
S3, encapsulation:
Take the dye solution of preparation in step S2 and put in brown glass ware, then growth is had three oxygen
The light anode changing tungsten three-dimensional grid nanostructured enters in this brown glass ware, lucifuge sensitization at 60 DEG C
3h, takes out, and is then sealed with this light anode by the same size FTO electro-conductive glass with Pt Catalytic Layer
Being fitted together, encapsulating material uses heat-sealing film, by electrolyte from the aperture injection to electrode one end, envelope
Dress aperture, connects wire, forms the modified model DSSC of the present invention.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108443803A (en) * | 2018-02-10 | 2018-08-24 | 深圳汇创联合自动化控制有限公司 | Solar street light based on solar tracking device |
| CN110510890A (en) * | 2019-09-27 | 2019-11-29 | 上海交通大学 | Nanostructure WO is prepared on ito glass surface3The method of film |
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| CN108443803A (en) * | 2018-02-10 | 2018-08-24 | 深圳汇创联合自动化控制有限公司 | Solar street light based on solar tracking device |
| CN110510890A (en) * | 2019-09-27 | 2019-11-29 | 上海交通大学 | Nanostructure WO is prepared on ito glass surface3The method of film |
| CN110510890B (en) * | 2019-09-27 | 2022-01-11 | 上海交通大学 | Preparation of nanostructure WO on ITO glass surface3Method for making thin film |
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| CN105895379B (en) | 2018-06-01 |
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