CN106206422A - The method reducing the growth of metal hardmask Damascus integration etching defect - Google Patents
The method reducing the growth of metal hardmask Damascus integration etching defect Download PDFInfo
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- CN106206422A CN106206422A CN201610694050.3A CN201610694050A CN106206422A CN 106206422 A CN106206422 A CN 106206422A CN 201610694050 A CN201610694050 A CN 201610694050A CN 106206422 A CN106206422 A CN 106206422A
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- damascus
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Abstract
The invention provides a kind of method reducing the growth of metal hardmask Damascus integration etching defect, including: perform metal hardmask Damascus integration etching processing；Second step: use etching apparatus to wash the polymer produced in crystal column surface etching process；Third step: use etching apparatus to deposit one layer of more stable polymer at crystal column surface, stops the polymer of etching defect stopping that device surface on wafer and air react to produce.
Description
Technical field
The present invention relates to field of semiconductor manufacture, it is more particularly related to a kind of reduction metal hardmask is big
The method of Ma Shige integration etching defect growth and use this reduction metal hardmask Damascus integration etching to lack
Fall into the method for manufacturing integrated circuit of the method for growth.
Background technology
Along with the reduction of dimensions of semiconductor devices, in 65nm and following Technology, metal hardmask damascene
Often there is stopping the defect phenomenon of etching in leather integration etching.The main cause causing this defect is in etching process
Can produce the fluorine-containing polymer being difficult to take away, fluorine-containing polymer can cause fluorine harm with metal hardmask reaction.This
The reaction equation of process is:
4F+H2O->4HF+O2；HF+TiO->TiOFH.
And the fluorine meeting barrier metal deposition separated out on metal hardmask finally there will be metallic circuit and cannot turn on, its
Main reflection mechanism is with reference to shown in Fig. 1, and side circuit displaing micro picture is as shown in Figure 2.
In general, exist while integration etching process techniques in metal hardmask Damascus reaches its maturity
Some problems below:
1) often there is stopping the defect phenomenon of etching in integration etching in metal hardmask Damascus, finally can go out
Existing metallic circuit cannot turn on；
2) metal hardmask Damascus integration etching wafer position the most up stops that etching defect phenomenon is the most serious；
3) metal hardmask Damascus integration etching wafer the longest stop of standing time before wet etching etches
Defect phenomenon degree is the most serious.
Summary of the invention
The technical problem to be solved is for there is drawbacks described above in prior art, it is provided that one can reduce
The method of metal hardmask Damascus integration etching defect growth.
In order to realize above-mentioned technical purpose, according to the present invention, it is provided that a kind of reduction metal hardmask Damascus one
The method of body etching defect growth, including:
First step: perform metal hardmask Damascus integration etching processing；
Second step: wash the polymer produced in crystal column surface etching process；
Third step: deposit one layer of more stable polymer at crystal column surface, with stop device surface on wafer with
Air reacts and produces the polymer stopping etching defect.
Preferably, the method for described reduction metal hardmask Damascus integration etching defect growth also includes: build
Vertical scavenging period, the relational model that sedimentation time is corresponding with critical size.
Preferably, according to the relational model set up, the scavenging period of second step is selected.
Preferably, according to the relational model set up, the sedimentation time of third step is selected.
Preferably, the chemical reaction produced that cleans of second step is:
N2+CxFy→CN↓+NFx↑
N2+H2+CxFy→CN↓+CHFx↑+NFy↑
C-O(CO2/CO)+CxFy→COF↑+CO2↑+CO↑。
Preferably, the chemical reaction that the deposition of third step produces is:
N2+CO→CN↓+O2↑。
Preferably, second step uses etching apparatus to wash the polymer produced in crystal column surface etching process；And
Third step uses etching apparatus to deposit one layer of more stable polymer to stop the device surface on wafer at crystal column surface
React with air and produce the polymer stopping etching defect.
In order to realize above-mentioned technical purpose, according to the present invention, additionally provide a kind of this reduction metal hardmask of employing big
The method for manufacturing integrated circuit of the method for Ma Shige integration etching defect growth.
Accompanying drawing explanation
In conjunction with accompanying drawing, and by with reference to detailed description below, it will more easily the present invention is had more complete understanding
And its adjoint advantage and feature is more easily understood, wherein:
Fig. 1 schematically shows metal hardmask Damascus integration etch polymers mechanism of production.
Fig. 2 schematically shows metallic circuit cannot turn on the microgram of defect.
Fig. 3 schematically shows and reduces the integration of metal hardmask Damascus according to the preferred embodiment of the invention
The flow chart of the method for etching defect growth.
Fig. 4 schematically shows and reduces the integration of metal hardmask Damascus according to the preferred embodiment of the invention
Under the method for etching defect growth, deposition stablizes polymer schematic diagram.
It should be noted that accompanying drawing is used for illustrating the present invention, and the unrestricted present invention.Note, represent that the accompanying drawing of structure can
Can be not necessarily drawn to scale.Further, in accompanying drawing, same or like element indicates same or like label.
Detailed description of the invention
In order to make present disclosure more clear and understandable, below in conjunction with specific embodiments and the drawings in the present invention
Appearance is described in detail.
The present invention is by the last step originally of whole etching process in the integration of metal hardmask Damascus being etched
Cleaning step resolve into two steps, be respectively first wash in crystal column surface etching process produce polymer, then at wafer
Surface one layer of more stable polymer of deposition, thus the device in wafer is not had with air exclusion volatilization simultaneously and asks
Topic, stops device surface and air reacts and produces the polymer stopping etching defect.
Fig. 3 schematically shows and reduces the integration of metal hardmask Damascus according to the preferred embodiment of the invention
The flow chart of the method for etching defect growth.
Lack as it is shown on figure 3, reduce metal hardmask Damascus integration etching according to the preferred embodiment of the invention
Fall into the method for growth and include the following step that performs successively:
First step S1: perform metal hardmask Damascus integration etching processing；For example, it is possible in existing technique
In flow process, perform metal hardmask Damascus integration etching processing；
Second step S2: use etching apparatus to wash the polymer produced in crystal column surface etching process；
Such as, the chemical reaction produced that cleans of second step is:
N2+CxFy→CN↓+NFx↑
N2+H2+CxFy→CN↓+CHFx↑+NFy↑
C-O(CO2/CO)+CxFy→COF↑+CO2↑+CO↑。
Third step S3: use etching apparatus to deposit one layer of more stable polymer at crystal column surface, to stop wafer
On device surface and air react and produce the polymer stopping etching defect；
Such as, the chemical reaction that the deposition of third step produces is:
N2+CO→CN↓+O2↑。
Preferably, scavenging period can be set up, relational model that sedimentation time is corresponding with critical size；
The most preferably, according to the relational model set up, select suitable scavenging period and sedimentation time, thus in difference
Critical size under realize the isolation of device surface in wafer and air, thus prevent reaction from producing and stop the poly-of etching defect
Compound.
Fig. 4 schematically shows and reduces the integration of metal hardmask Damascus according to the preferred embodiment of the invention
Under the method for etching defect growth, deposition stablizes polymer schematic diagram.It can be seen that the present invention is by first cleaning the side deposited afterwards
Method intercepts fluorine-containing Organic substance and reacts with the water in air；It is additionally, since effective obstruct, thus solves metal hardmask
Integration etching wafer position in Damascus the most up stops the phenomenon that etching defect is the most serious；Additionally, due to effectively intercept,
Thus extend metal hardmask Damascus integration etching wafer and may wait for the time before wet etching.
According to another preferred embodiment of the invention, a kind of this reduction metal hardmask Damascus of employing is additionally provided
The method for manufacturing integrated circuit of the method for integration etching defect growth.
Furthermore, it is necessary to explanation, unless stated otherwise or point out, otherwise the term in description " first ", " the
Two ", " the 3rd " etc. describe be used only for distinguishing in description each assembly, element, step etc. rather than for representing each
Logical relation between assembly, element, step or ordering relation etc..
Although it is understood that the present invention discloses as above with preferred embodiment, but above-described embodiment being not used to
Limit the present invention.For any those of ordinary skill in the art, without departing under technical solution of the present invention ambit,
Technical solution of the present invention is made many possible variations and modification by the technology contents that all may utilize the disclosure above, or is revised as
Equivalent embodiments with change.Therefore, every content without departing from technical solution of the present invention, according to the technical spirit pair of the present invention
Any simple modification made for any of the above embodiments, equivalent variations and modification, all still fall within the scope of technical solution of the present invention protection
In.
Claims (8)
1. the method reducing the growth of metal hardmask Damascus integration etching defect, it is characterised in that including:
First step: perform metal hardmask Damascus integration etching processing；
Second step: wash the polymer produced in crystal column surface etching process；
Third step: deposit one layer of more stable polymer at crystal column surface, to stop the device surface on wafer and air
React and produce the polymer stopping etching defect.
The method of reduction metal hardmask Damascus integration etching defect the most according to claim 1 growth, its
It is characterised by also including: set up scavenging period, relational model that sedimentation time is corresponding with critical size.
The method of reduction metal hardmask Damascus integration etching defect the most according to claim 2 growth, its
It is characterised by, according to the relational model set up, selects the scavenging period of second step.
The method of reduction metal hardmask Damascus integration etching defect the most according to claim 2 growth, its
It is characterised by, according to the relational model set up, selects the sedimentation time of third step.
The method of reduction metal hardmask Damascus integration etching defect the most according to claim 1 and 2 growth,
It is characterized in that, the chemical reaction produced that cleans of second step is:
N2+CxFy→CN↓+NFx↑
N2+H2+CxFy→CN↓+CHFx↑+NFy↑
C-O(CO2/CO)+CxFy→COF↑+CO2↑+CO↑。
The method of reduction metal hardmask Damascus integration etching defect the most according to claim 1 and 2 growth,
It is characterized in that, the chemical reaction that the deposition of third step produces is:
N2+CO→CN↓+O2↑。
The method of reduction metal hardmask Damascus integration etching defect the most according to claim 1 and 2 growth,
It is characterized in that, second step uses etching apparatus to wash the polymer produced in crystal column surface etching process；And the 3rd
Step uses etching apparatus to deposit one layer of more stable polymer with the device surface stopping on wafer and sky at crystal column surface
Gas reacts and produces the polymer stopping etching defect.
8. one kind uses according to the reduction metal hardmask Damascus integration etching one of claim 1 to 7 Suo Shu scarce
Fall into the method for manufacturing integrated circuit of the method for growth.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060077657A (en) * | 2004-12-30 | 2006-07-05 | 동부일렉트로닉스 주식회사 | Method for forming copper wiring of semiconductor device using damascene |
| CN101325172A (en) * | 2007-06-15 | 2008-12-17 | 台湾积体电路制造股份有限公司 | Method for fabricating low-dielectric constant dielectric medium and copper wire |
| CN103377913A (en) * | 2012-04-18 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | Method of forming opening |
| CN105745740A (en) * | 2013-09-17 | 2016-07-06 | 应用材料公司 | Methods for stabilizing an interface post etch to minimize queue time issues before next processing step |
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2016
- 2016-08-19 CN CN201610694050.3A patent/CN106206422B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060077657A (en) * | 2004-12-30 | 2006-07-05 | 동부일렉트로닉스 주식회사 | Method for forming copper wiring of semiconductor device using damascene |
| CN101325172A (en) * | 2007-06-15 | 2008-12-17 | 台湾积体电路制造股份有限公司 | Method for fabricating low-dielectric constant dielectric medium and copper wire |
| CN103377913A (en) * | 2012-04-18 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | Method of forming opening |
| CN105745740A (en) * | 2013-09-17 | 2016-07-06 | 应用材料公司 | Methods for stabilizing an interface post etch to minimize queue time issues before next processing step |
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