CN106206310A - The manufacture method of rf-ldmos semiconductor device - Google Patents
The manufacture method of rf-ldmos semiconductor device Download PDFInfo
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Abstract
本发明提供了一种射频横向双扩散金属氧化物半导体器件的制作方法,其中制作方法包括在基底上的栅极表面以及基底的表面形成厚氧化层;刻蚀厚氧化层,形成场氧化层,在场氧化层上形成场板材料层,场板材料层包括第三斜坡部、第四斜坡部和连接于第三斜坡部和第四斜坡部的第二连接部;刻蚀所述场板材料层。本发明提供的射频横向双扩散金属氧化物半导体器件及其制作方法通过形成包括第三斜坡部、第四斜坡部的场板材料层,使得第三斜坡部和第四斜坡部距离场氧化层的垂直距离被减小,因此,后续对场板材料层的刻蚀更加容易,可以避免现有技术中场板刻蚀引起的残留,因而可以降低出现阈值电压漂移的问题。
The invention provides a method for manufacturing a radio frequency lateral double-diffused metal oxide semiconductor device, wherein the manufacturing method includes forming a thick oxide layer on the surface of the gate on the substrate and the surface of the substrate; etching the thick oxide layer to form a field oxide layer, Forming a field plate material layer on the field oxide layer, the field plate material layer including a third slope portion, a fourth slope portion and a second connection portion connected to the third slope portion and the fourth slope portion; etching the field plate material layer . The radio frequency lateral double-diffused metal oxide semiconductor device and its manufacturing method provided by the present invention form the field plate material layer including the third slope part and the fourth slope part, so that the third slope part and the fourth slope part are separated from the field oxide layer. The vertical distance is reduced, therefore, the subsequent etching of the field plate material layer is easier, and the residue caused by field plate etching in the prior art can be avoided, thereby reducing the problem of threshold voltage drift.
Description
技术领域technical field
本发明涉及一种半导体器件技术,特别是涉及射频横向双扩散金属氧化物半导体器件的制作方法。The invention relates to a semiconductor device technology, in particular to a manufacturing method of a radio frequency lateral double-diffused metal oxide semiconductor device.
背景技术Background technique
在射频横向双扩散金属氧化物半导体器件的设计中,为了提高器件的击穿电压,场板的设计是必不可少的。场板技术是提高器件表面耐压的常用终端技术,它可以有效降低反向PN结的表面电场,提高PN结的耐压能力。即当表面覆盖有场板的PN结加反向偏压时,水平方向的部分电力线将会终止于垂直方向的场板,从而降低水平方向的电场强度,提高器件的抗击穿能力。In the design of radio frequency lateral double-diffused metal oxide semiconductor devices, in order to improve the breakdown voltage of the device, the design of the field plate is essential. Field plate technology is a commonly used terminal technology to improve the surface withstand voltage of devices. It can effectively reduce the surface electric field of the reverse PN junction and improve the withstand voltage capability of the PN junction. That is, when the PN junction covered with a field plate is reversely biased, part of the power lines in the horizontal direction will terminate at the field plate in the vertical direction, thereby reducing the electric field strength in the horizontal direction and improving the breakdown resistance of the device.
图1A-1B为现有技术中的射频横向双扩散金属氧化物半导体器件的场板结构示意图,如图1A所示,该器件包括支撑基底101、栅极102、氧化层103,在现有技术中,还需要在基底101和栅极102的表面形成一层场板104,其中,场板104包括水平部1041和垂直部1042,水平部1041和垂直部1042相互垂直。进一步的,如图1B所示,要对场板104进行刻蚀。1A-1B are schematic diagrams of the field plate structure of a radio frequency lateral double-diffused metal oxide semiconductor device in the prior art. As shown in FIG. 1A, the device includes a supporting substrate 101, a gate 102, and an oxide layer 103. In the prior art Among them, a field plate 104 needs to be formed on the surface of the substrate 101 and the gate 102, wherein the field plate 104 includes a horizontal portion 1041 and a vertical portion 1042, and the horizontal portion 1041 and the vertical portion 1042 are perpendicular to each other. Further, as shown in FIG. 1B , the field plate 104 needs to be etched.
但是,在后续场板104的刻蚀过程中,由于场板的垂直部1042的厚度,也即场板垂直部1042的上表面距离氧化层103的垂直距离H1比水平部1041的厚度厚,因此,在刻蚀的过程中当水平部1041刻蚀完毕之后,但垂直部1042却没有刻蚀完,因此,非常容易形成残留区域1043,残留区域1043会引起阈值电压漂移等问题。However, in the subsequent etching process of the field plate 104, since the thickness of the vertical portion 1042 of the field plate, that is, the vertical distance H1 between the upper surface of the vertical portion 1042 of the field plate and the oxide layer 103 is thicker than the thickness of the horizontal portion 1041, During the etching process, after the horizontal portion 1041 is etched, the vertical portion 1042 is not etched. Therefore, the residual region 1043 is very easy to form, and the residual region 1043 will cause problems such as threshold voltage drift.
发明内容Contents of the invention
本发明的目的是提供射频横向双扩散金属氧化物半导体器件的制作方法,用以解决现有技术刻蚀场板的过程中在场板上容易留有残留区域,引起阈值电压漂移的问题。The purpose of the present invention is to provide a method for fabricating a radio frequency lateral double-diffused metal oxide semiconductor device, which is used to solve the problem that the field plate is easily left with a residual region in the process of etching the field plate in the prior art, which causes threshold voltage drift.
本发明提供了一种射频横向双扩散金属氧化物半导体器件的制作方法,包括:在基底上的栅极表面以及所述基底的表面形成厚氧化层;刻蚀所述厚氧化层,形成场氧化层,所述场氧化层包括第一斜坡部、第二斜坡部和连接于所述第一斜坡部和所述第二斜坡部的连接部,所述连接部位于所述栅极的表面,所述第一斜坡部和所述第二斜坡部分别位于所述栅极的两侧;在所述场氧化层上形成场板。The invention provides a method for manufacturing a radio frequency lateral double-diffused metal oxide semiconductor device, comprising: forming a thick oxide layer on the surface of the gate on the substrate and the surface of the substrate; etching the thick oxide layer to form a field oxide layer, the field oxide layer includes a first slope portion, a second slope portion and a connection portion connected to the first slope portion and the second slope portion, the connection portion is located on the surface of the gate, and The first slope portion and the second slope portion are respectively located on both sides of the gate; a field plate is formed on the field oxide layer.
本发明提供的射频横向双扩散金属氧化物半导体器件的制作方法,通过形成包括第一斜坡部、第二斜坡部的场氧化层,并进一步在场氧化层的表面形成包括第三斜坡部、第四斜坡部的场板材料层,使得第三斜坡部和第四斜坡部距离场氧化层的垂直距离被减小,因此,后续对场板材料层的刻蚀更加容易,可以避免现有技术中场板刻蚀引起的残留,因而可以降低出现阈值电压漂移的问题。The method for fabricating a radio frequency lateral double-diffused metal oxide semiconductor device provided by the present invention comprises forming a field oxide layer including a first slope portion and a second slope portion, and further forming a third slope portion, a fourth slope portion on the surface of the field oxide layer. The field plate material layer of the slope portion reduces the vertical distance between the third slope portion and the fourth slope portion from the field oxide layer, so the subsequent etching of the field plate material layer is easier, and the field field in the prior art can be avoided. Residues caused by plate etch can reduce the problem of threshold voltage drift.
附图说明Description of drawings
图1为现有技术中带有分压结构的射频横向双扩散金属氧化物半导体器件的结构示意图;FIG. 1 is a structural schematic diagram of a radio frequency lateral double-diffused metal oxide semiconductor device with a voltage divider structure in the prior art;
图2为本发明实施例的射频横向双扩散金属氧化物半导体器件的制作方法的流程图;2 is a flowchart of a method for fabricating a radio frequency lateral double-diffused metal oxide semiconductor device according to an embodiment of the present invention;
图3A-3E为本发明实施例二提供的制作射频横向双扩散金属氧化物半导体器件的各步骤的结构示意图。3A-3E are structural schematic diagrams of various steps of manufacturing a radio frequency lateral double-diffused metal oxide semiconductor device according to Embodiment 2 of the present invention.
具体实施方式detailed description
实施例一Embodiment one
本实施例提供一种射频横向双扩散金属氧化物半导体器件的制作方法,如图2所示,图2为本发明实施例提供的射频横向双扩散金属氧化物半导体器件的制作方法的流程图,该射频横向双扩散金属氧化物半导体器件的制作方法,包括:This embodiment provides a method for manufacturing a radio frequency lateral double-diffused metal oxide semiconductor device, as shown in FIG. 2 , which is a flowchart of a method for manufacturing a radio frequency lateral double-diffused metal oxide semiconductor device provided by an embodiment of the present invention. The manufacturing method of the radio frequency lateral double-diffused metal oxide semiconductor device includes:
步骤201,在基底上的栅极表面以及基底的表面形成厚氧化层。Step 201, forming a thick oxide layer on the surface of the gate on the substrate and the surface of the substrate.
其中,栅极可选为多晶硅。Wherein, the gate may be polysilicon.
厚氧化层的形成方式可以是化学气相沉积,具体可以采用低压、常压或者等离子体化学气相沉积。为了形成较为致密的厚氧化层,优选为低压化学气相沉积厚氧化层。The thick oxide layer can be formed by chemical vapor deposition, specifically low pressure, normal pressure or plasma chemical vapor deposition. In order to form a denser thick oxide layer, the thick oxide layer is preferably deposited by low pressure chemical vapor phase.
步骤202,刻蚀厚氧化层,形成场氧化层。Step 202, etching the thick oxide layer to form a field oxide layer.
其中,场氧化层包括第一斜坡部、第二斜坡部和连接于第一斜坡部和第二斜坡部的第一连接部,第一连接部位于栅极的表面,第一斜坡部和第二斜坡部分别位于栅极的两侧。Wherein, the field oxide layer includes a first slope portion, a second slope portion and a first connection portion connected to the first slope portion and the second slope portion, the first connection portion is located on the surface of the gate, the first slope portion and the second slope portion The slope parts are respectively located on two sides of the gate.
步骤203,在场氧化层上形成场板材料层。Step 203, forming a field plate material layer on the field oxide layer.
具体的,可以采用化学气相沉积在场氧化层的表面形成场板材料层,因此场板材料层的形状与场氧化层的形状相似,即场板材料层包括第三斜坡部、第四斜坡部和连接于第三斜坡部和第四斜坡部的第二连接部,其中,第三斜坡部位于场氧化层的第一斜坡部表面,第四斜坡部位于场氧化层的第二斜坡部表面,第二连接部部位于场氧化层的第一连接部表面。Specifically, chemical vapor deposition can be used to form a field plate material layer on the surface of the field oxide layer, so the shape of the field plate material layer is similar to that of the field oxide layer, that is, the field plate material layer includes a third slope, a fourth slope and The second connecting portion connected to the third slope portion and the fourth slope portion, wherein the third slope portion is located on the surface of the first slope portion of the field oxide layer, the fourth slope portion is located on the surface of the second slope portion of the field oxide layer, and the third slope portion is located on the surface of the second slope portion of the field oxide layer. The second connection part is located on the surface of the first connection part of the field oxide layer.
步骤204,刻蚀场板材料层,形成场板。Step 204, etching the field plate material layer to form a field plate.
本实施例的射频横向双扩散金属氧化物半导体器件的制作方法中,通过形成包括第一斜坡部、第二斜坡部的场氧化层,并进一步在场氧化层的表面形成包括第三斜坡部、第四斜坡部的场板材料层,使得第三斜坡部和第四斜坡部距离场氧化层的垂直距离被减小,其中需要说明的是,垂直距离是指第三斜坡部或第四斜坡部的上表面到场氧化层上表面的垂直距离,因此,后续对场板材料层的刻蚀更加容易,可以避免现有技术中场板刻蚀引起的残留,因而可以降低出现阈值电压漂移的问题。In the method for fabricating a radio frequency lateral double-diffused metal oxide semiconductor device in this embodiment, a field oxide layer including a first slope portion and a second slope portion is formed, and a field oxide layer including a third slope portion and a second slope portion is further formed on the surface of the field oxide layer. A field plate material layer with four slopes, so that the vertical distance between the third slope and the fourth slope and the field oxide layer is reduced, where it should be noted that the vertical distance refers to the third slope or the fourth slope The vertical distance from the upper surface to the upper surface of the field oxide layer, therefore, the subsequent etching of the field plate material layer is easier, and the residue caused by the field plate etching in the prior art can be avoided, thereby reducing the problem of threshold voltage drift.
实施例二Embodiment two
如图3A至3E所示,图3A-3E为制作射频横向双扩散金属氧化物半导体器件的各步骤的结构示意图,本实施例也是对上述实施例的进一步补充说明。As shown in FIGS. 3A to 3E , FIGS. 3A-3E are schematic structural diagrams of various steps in fabricating a radio frequency lateral double-diffused metal oxide semiconductor device. This embodiment is also a further supplementary description of the above embodiments.
如图3A所示,在基底1上的栅极2表面以及基底1的表面形成厚氧化层3。As shown in FIG. 3A , a thick oxide layer 3 is formed on the surface of the gate 2 on the substrate 1 and the surface of the substrate 1 .
其中,基底1包括衬底11、体区12、源区13、漂移区14、漏区15、栅氧化层16,其中衬底11为硅衬底,硅衬底中掺杂有杂质,杂质可以为锑或砷。衬底11、体区12、源区13、漂移区14、漏区15、栅氧化层16的形成方式均为现有技术,在此不再赘述。厚氧化层3是通过化学气相沉积形成在基底1上的,可选的,与现有技术相比,例如现有技术的厚氧化层的厚度为1500埃,则本实施例中提供的射频横向双扩散金属氧化物半导体器件的厚氧化层3的厚度为3000埃-5000埃,但厚度并不限于此,具体的厚度可以根据实际的器件需求而做出更改,只要保证该厚氧化层3的厚度为现有技术的2-3倍即可,目的是为了下一步骤对厚氧化层3进行刻蚀后,保证通过刻蚀厚氧化层所形成的场氧化层的厚度。Wherein, the substrate 1 includes a substrate 11, a body region 12, a source region 13, a drift region 14, a drain region 15, and a gate oxide layer 16, wherein the substrate 11 is a silicon substrate, and the silicon substrate is doped with impurities, and the impurities can be antimony or arsenic. The formation methods of the substrate 11 , the body region 12 , the source region 13 , the drift region 14 , the drain region 15 , and the gate oxide layer 16 are all in the prior art, and will not be repeated here. The thick oxide layer 3 is formed on the substrate 1 by chemical vapor deposition. Optionally, compared with the prior art, for example, the thickness of the thick oxide layer in the prior art is 1500 angstroms, then the radio frequency lateral The thickness of the thick oxide layer 3 of the double-diffused metal oxide semiconductor device is 3000-5000 angstroms, but the thickness is not limited thereto. The specific thickness can be changed according to the actual device requirements, as long as the thickness of the thick oxide layer 3 is ensured. The thickness may be 2-3 times of the prior art, and the purpose is to ensure the thickness of the field oxide layer formed by etching the thick oxide layer after etching the thick oxide layer 3 in the next step.
进一步的,如图3B所示,刻蚀厚氧化层3,形成场氧化层4。Further, as shown in FIG. 3B , the thick oxide layer 3 is etched to form a field oxide layer 4 .
其中,形成场氧化层4的具体方式为在真空度为100-300毫托,磁场20-40高斯的条件下刻蚀厚氧化层3。具体的,刻蚀厚氧化层3还需要加入刻蚀气体和惰性气体,具体的刻蚀气体可以根据厚氧化层3的材料进行选择,例如,若厚氧化层3为氧化硅,则刻蚀气体可以采用三氟甲烷,四氟化碳等,其中刻蚀气体的流量可选为30-80毫升/分钟,刻蚀气体的量不适宜过大,否则容易将基底1表面的氧化层刻蚀掉,刻蚀厚氧化层3的刻蚀时间为20秒-80秒。惰性气体可选为氩气,流量为40-150毫升/分钟。Wherein, the specific method of forming the field oxide layer 4 is to etch the thick oxide layer 3 under the conditions of a vacuum degree of 100-300 mTorr and a magnetic field of 20-40 Gauss. Specifically, etching the thick oxide layer 3 also needs to add etching gas and inert gas. The specific etching gas can be selected according to the material of the thick oxide layer 3. For example, if the thick oxide layer 3 is silicon oxide, the etching gas Trifluoromethane, carbon tetrafluoride, etc. can be used, and the flow rate of the etching gas can be selected as 30-80 ml/min. The amount of the etching gas should not be too large, otherwise the oxide layer on the surface of the substrate 1 will be easily etched away , the etching time for etching the thick oxide layer 3 is 20 seconds to 80 seconds. The inert gas may be argon, and the flow rate is 40-150 ml/min.
场氧化层4包括第一斜坡部41、第二斜坡部42以及连接于第一斜坡部41和第二斜坡部42的第一连接部43,第一连接部43位于栅极2的表面,第一斜坡部41和第二斜坡部42分别位于栅极2的两侧。其中,第一斜坡部41、第一连接部43和第二斜坡部42在水平方向上的长度与基底1的长度相等。如图3B所示,第一斜坡部41包括第一水平部410以及第一竖直部411,第二斜坡部42包括第二竖直部421以及第二水平部422。第一水平部410和第二水平部422为与基底1平行的部分,第一竖直部411连接于第一水平部410和第一连接部43之间,第二竖直部421连接于第二水平部422和第二连接部43之间。更为具体地,第一竖直部411远离栅极2的一侧的形状为弧形,弧形弯曲的方向为远离栅极2的方向,同样,第二竖直部422远离栅极2的一侧的形状也为弧形,弧形弯曲的方向也为远离栅极2的方向。The field oxide layer 4 includes a first slope portion 41, a second slope portion 42, and a first connection portion 43 connected to the first slope portion 41 and the second slope portion 42. The first connection portion 43 is located on the surface of the gate 2. A slope portion 41 and a second slope portion 42 are respectively located on two sides of the gate 2 . Wherein, the lengths of the first slope portion 41 , the first connecting portion 43 and the second slope portion 42 in the horizontal direction are equal to the length of the base 1 . As shown in FIG. 3B , the first slope portion 41 includes a first horizontal portion 410 and a first vertical portion 411 , and the second slope portion 42 includes a second vertical portion 421 and a second horizontal portion 422 . The first horizontal part 410 and the second horizontal part 422 are parts parallel to the base 1, the first vertical part 411 is connected between the first horizontal part 410 and the first connecting part 43, and the second vertical part 421 is connected to the first between the second horizontal portion 422 and the second connecting portion 43 . More specifically, the shape of the side of the first vertical portion 411 away from the grid 2 is arc-shaped, and the direction of arc bending is the direction away from the grid 2. Likewise, the second vertical portion 422 is away from the side of the grid 2. The shape of one side is also arc-shaped, and the arc-shaped bending direction is also the direction away from the gate 2 .
如图3C所示,采用化学气相沉积在场氧化层4上形成场板材料层5,可选地,场板材料层5为多晶硅、硅化钨、钛的任意一种,厚度在800埃至3000埃之间,场板材料层5包括第三斜坡部51、第四斜坡部52和连接于第三斜坡部51和第四斜坡部52的第二连接部53,其中,由于场板材料层5是采用化学气相沉积形成的,第三倾斜部51、第四倾斜部52以及第二连接部的厚度是相等,因此场板材料层5的形状与场氧化层4的形状相似。As shown in FIG. 3C, the field plate material layer 5 is formed on the field oxide layer 4 by chemical vapor deposition. Optionally, the field plate material layer 5 is any one of polysilicon, tungsten silicide, and titanium, with a thickness of 800 angstroms to 3000 angstroms. Between, the field plate material layer 5 includes a third slope portion 51, a fourth slope portion 52 and a second connecting portion 53 connected to the third slope portion 51 and the fourth slope portion 52, wherein, since the field plate material layer 5 is Formed by chemical vapor deposition, the thicknesses of the third inclined portion 51 , the fourth inclined portion 52 and the second connecting portion are equal, so the shape of the field plate material layer 5 is similar to that of the field oxide layer 4 .
此外,由于场板材料层5和栅极2都是导体,若场板材料层5和栅极2接触则会造成短路,因此第一连接部43可以防止场板材料层5和栅极2之间的短路,进一步的,由于栅氧化层16通常很薄,不足以隔离场板材料层5和栅氧化层16下的源区13、漂移区14和漏区15,因此,第一水平部44和第二水平部45可以防止场板材料层5与栅氧化层16下方的源区13、漂移区14和漏区15连接造成的短路。此外,在形成场氧化层4时需要严格控制刻蚀条件,防止第一连接部43、第一水平部410、第二水平部422被刻蚀掉。In addition, since the field plate material layer 5 and the gate 2 are both conductors, if the field plate material layer 5 and the gate 2 are in contact, a short circuit will be caused, so the first connecting portion 43 can prevent the connection between the field plate material layer 5 and the gate 2. Further, since the gate oxide layer 16 is usually very thin, it is not enough to isolate the source region 13, the drift region 14 and the drain region 15 under the field plate material layer 5 and the gate oxide layer 16, therefore, the first horizontal portion 44 And the second horizontal part 45 can prevent the short circuit caused by the connection between the field plate material layer 5 and the source region 13 , the drift region 14 and the drain region 15 under the gate oxide layer 16 . In addition, when forming the field oxide layer 4 , the etching conditions need to be strictly controlled to prevent the first connection portion 43 , the first horizontal portion 410 , and the second horizontal portion 422 from being etched away.
其中,第三倾斜部51还包括第三竖直部511和第三水平部510,第四倾斜部52包括弯曲部521和第四水平部520,第三水平部510和第四水平部520为与基底1平行的部分,第三竖直部511连接于第三水平部510和第二连接部53之间,第弯曲部521连接于第四水平部520和第二连接部53之间,更为具体的,第三竖直部511远离栅极2的一侧的形状为弧形,弧形弯曲的方向为远离栅极2的方向,同样,弯曲部521远离栅极2的一侧的形状也为弧形,弧形弯曲的方向也为远离栅极2的方向。其中,第三竖直部511、弯曲部521的形状可以为如图3C所示的弧形,可以为三角形(图中未示出),或者为扇形(图中未示出),以上形状均能保证场板材料层5的第三竖直部511以及弯曲部521距离场氧化层4的垂直距离H比现有技术中场板垂直部1024的距离氧化层103的垂直距离H1小,当然第三竖直部511和弯曲部521也可以为其他可减小垂直距离H的形状,在此不再一一列举。其中,由于干法刻蚀工艺是各向异性的,因此在刻蚀场氧化层4时将第一竖直部411第二竖直部421刻蚀为弧形最容易,也即第三竖直部511及弯曲部521的形状为弧形对于工艺的要求最简单,因此,优选的,第三竖直部511和弯曲部521的形状为弧形。Wherein, the third inclined portion 51 further includes a third vertical portion 511 and a third horizontal portion 510, the fourth inclined portion 52 includes a curved portion 521 and a fourth horizontal portion 520, and the third horizontal portion 510 and the fourth horizontal portion 520 are The part parallel to the base 1, the third vertical part 511 is connected between the third horizontal part 510 and the second connecting part 53, the first curved part 521 is connected between the fourth horizontal part 520 and the second connecting part 53, and further To be more specific, the shape of the side of the third vertical portion 511 away from the grid 2 is arc-shaped, and the direction of arc bending is the direction away from the grid 2. Similarly, the shape of the side of the curved portion 521 away from the grid 2 It is also arc-shaped, and the direction of arc-shaped bending is also the direction away from the gate 2 . Wherein, the shape of the third vertical portion 511 and the curved portion 521 can be an arc as shown in FIG. 3C , a triangle (not shown in the figure), or a sector (not shown in the figure). It can ensure that the vertical distance H between the third vertical portion 511 and the curved portion 521 of the field plate material layer 5 and the field oxide layer 4 is smaller than the vertical distance H1 between the vertical portion 1024 of the field plate and the oxide layer 103 in the prior art. The three vertical portions 511 and the curved portion 521 may also be in other shapes that can reduce the vertical distance H, which will not be listed here. Among them, since the dry etching process is anisotropic, it is easiest to etch the first vertical portion 411 and the second vertical portion 421 into an arc shape when etching the field oxide layer 4, that is, the third vertical portion The arc shape of the portion 511 and the curved portion 521 has the simplest process requirements, therefore, preferably, the third vertical portion 511 and the curved portion 521 are arc shaped.
如图3D-3E所示,刻蚀场板材料层,形成场板。As shown in FIGS. 3D-3E , the field plate material layer is etched to form a field plate.
具体的,如图3D所示,在场板材料层5上形成光刻胶层6,光刻胶层6的一端位于栅极2的上方,光刻胶层6的另一端位于栅极2的侧面,其中,光刻胶层6为经过曝光显影后的光刻胶层。进一步的,如图3E所示,对场板材料层5进行刻蚀,形成具有弯曲部521的场板50,最后,去除光刻胶层6。Specifically, as shown in FIG. 3D, a photoresist layer 6 is formed on the field plate material layer 5, one end of the photoresist layer 6 is located above the gate 2, and the other end of the photoresist layer 6 is located on the side of the gate 2 , wherein the photoresist layer 6 is a photoresist layer after exposure and development. Further, as shown in FIG. 3E , the field plate material layer 5 is etched to form a field plate 50 having a bent portion 521 , and finally, the photoresist layer 6 is removed.
本实施例提供的射频横向双扩散金属氧化物半导体器件的制作方法中,通过形成包括第一斜坡部41、第二斜坡部42的场氧化层4,并进一步在场氧化层4的表面形成包括第三斜坡部51、第四斜坡部52的场板材料层5,使得第三斜坡部51和第四斜坡部52距离场氧化层的垂直距离被减小,因此,使得后续的场板刻蚀更加容易,可以避免现有技术中场板刻蚀引起的残留,因而可以降低出现阈值电压漂移的问题。In the manufacturing method of the radio frequency lateral double-diffused metal oxide semiconductor device provided in this embodiment, the field oxide layer 4 including the first slope part 41 and the second slope part 42 is formed, and the field oxide layer 4 is further formed on the surface of the field oxide layer 4. The field plate material layer 5 of the third slope portion 51 and the fourth slope portion 52, so that the vertical distance between the third slope portion 51 and the fourth slope portion 52 and the field oxide layer is reduced, thus making the subsequent field plate etching easier Easy, the residue caused by the etching of the field plate in the prior art can be avoided, so the problem of threshold voltage drift can be reduced.
实施例三Embodiment Three
本实施例还提供一种射频横向双扩散金属氧化物半导体器件,该器件的结构如图3E所示,本实施例提供的射频横向双扩散金属氧化物半导体器件可以根据上述实施例所提供的射频横向双扩散金属氧化物半导体器件的制作方法进行制作,在此不再详细赘述,请参见对于射频横向双扩散金属氧化物半导体器件的制作方法的描述。This embodiment also provides a radio-frequency lateral double-diffused metal-oxide semiconductor device, the structure of which is shown in Figure 3E. The radio-frequency lateral double-diffused metal-oxide semiconductor device provided in this embodiment can be based on the radio frequency The fabrication method of the lateral double-diffused metal-oxide semiconductor device will not be described in detail here, and please refer to the description of the fabrication method of the radio-frequency lateral double-diffused metal-oxide semiconductor device.
本实施例提供的射频横向双扩散金属氧化物半导体器件中,由于场板是由包括第三斜坡部51、第四斜坡部52和连接于第三斜坡部51和第四斜坡部52的第二连接部53的场板材料层5刻蚀而成,因此,减小了制作场板7的刻蚀难度,避免了现有技术中场板刻蚀引起的残留,因而可以降低出现于世电压漂移的问题,提高了器件的性能和产出良率。In the radio frequency lateral double-diffused metal oxide semiconductor device provided by this embodiment, since the field plate is composed of the third slope part 51, the fourth slope part 52 and the second slope part connected to the third slope part 51 and the fourth slope part 52 The field plate material layer 5 of the connection part 53 is etched, therefore, the etching difficulty of manufacturing the field plate 7 is reduced, and the residue caused by the etching of the field plate in the prior art is avoided, so that the voltage drift occurring in the world can be reduced The problem of improving the performance and output yield of the device.
最后应说明的是:以上实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: it can still be Modifications are made to the technical solutions described in the foregoing embodiments, or equivalent replacements are made to some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the various embodiments of the present invention.
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CN113972265A (en) * | 2020-07-23 | 2022-01-25 | 和舰芯片制造(苏州)股份有限公司 | Method for improving LDMOS (laterally diffused metal oxide semiconductor) process technology of strip field plate |
CN115497830A (en) * | 2022-11-21 | 2022-12-20 | 广州粤芯半导体技术有限公司 | Method for manufacturing semiconductor device and semiconductor device |
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