CN106169448A - A kind of power device package of high heat conduction - Google Patents
A kind of power device package of high heat conduction Download PDFInfo
- Publication number
- CN106169448A CN106169448A CN201610590550.2A CN201610590550A CN106169448A CN 106169448 A CN106169448 A CN 106169448A CN 201610590550 A CN201610590550 A CN 201610590550A CN 106169448 A CN106169448 A CN 106169448A
- Authority
- CN
- China
- Prior art keywords
- heat conduction
- barrier layer
- power device
- device package
- high heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Packages (AREA)
Abstract
The invention discloses the power device package of a kind of high heat conduction, including high conductive flange, described high conductive flange is coated with the first barrier layer, some cushions and the second barrier layer the most successively, described second barrier layer is welded with chip.The present invention, based on existing ripe flange material, the reasonably optimizing to plating process, introduces cushion concept, the advantage of the flange height heat conduction both retained, efficiently solves again Stress match difficult point.
Description
Technical field
The present invention relates to the power device package of a kind of high heat conduction, belong to power device package technical field.
Background technology
Along with microwave circuit is to high-power, highly integrated, assemblingization, miniaturization, to base substrate, base plate and shell
Propose increasingly harsher requirement Deng encapsulating material, can not meet modern encapsulation technology due to traditional electronic package material
Demand for development, thus to there is good heat conductivity and new material and the new technology matched with IC chip proposes
Urgent demand.And the exploitation of new material needs to spend substantial amounts of development capital and long-term construction cycle with using.
Summary of the invention
In order to solve above-mentioned technical problem, the invention provides the power device package of a kind of high heat conduction.
In order to achieve the above object, the technical solution adopted in the present invention is:
The power device package of a kind of high heat conduction, including high conductive flange, described high conductive flange is coated with the most successively
First barrier layer, some cushions and the second barrier layer, described second barrier layer is welded with chip.
First barrier layer and the second barrier layer are nickel cobalt layer.
The thickness on the first barrier layer and the second barrier layer is 0.5 ~ 10 um.
Cushion is the cushion that flexible material is constituted.
The thickness of cushion is 0.05 ~ 10 um.
Chip uses eutectic weldering mode to weld.
Coating parcel conductive flange surface.
Coating covering part conductive flange surface, this part conductive flange surface is in order to welding chip.
The beneficial effect that the present invention is reached: the present invention based on existing ripe flange material, reasonable to plating process
Optimize, introduce cushion concept, the advantage of the flange height heat conduction both retained, efficiently solve again Stress match difficult point.
Accompanying drawing explanation
Fig. 1 is the sectional view of the present invention.
Detailed description of the invention
The invention will be further described below in conjunction with the accompanying drawings.Following example are only used for clearly illustrating the present invention
Technical scheme, and can not limit the scope of the invention with this.
As it is shown in figure 1, the power device package of a kind of high heat conduction, including high conductive flange 1, high conductive flange 1 uses existing
Some copper flanges, certainly may be used without the flange that other highly heat-conductive materials are made, high conductive flange 1 are coated with the most successively
First barrier layer 2, some cushions 3 and the second barrier layer 4, the first barrier layer 2 and the second barrier layer 4 are nickel cobalt layer, thick
Degree is 0.5 ~ 10 um, and optimal thickness is 3.5um, the second barrier layer 4 uses eutectic weldering mode be welded with chip 5, uses here
Gold silicon eutectic weldering or Sn/Au eutectic weldering, the cushion 3 that cushion 3 is constituted for flexible material, such as gold, silver-colored, the flexible material such as lead, this
In use gold, the thickness of cushion 3 is 0.05 ~ 10 um, and optimal thickness is 0.5um, and cushion 3 has 1 ~ 50 layer.
First barrier layer 2, cushion 3 and the second barrier layer 4 collectively form the coating of described power device package, coating
Can wrap up conductive flange surface, it is possible to covering part conductive flange surface, the part conductive flange surface of covering is in order to weld core
Sheet 5
The power device package of above-mentioned high heat conduction, based on existing ripe flange material, the reasonably optimizing to plating process, introduces
Cushion 3 concept, the advantage of the flange height heat conduction both retained, efficiently solve again Stress match difficult point.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For Yuan, on the premise of without departing from the technology of the present invention principle, it is also possible to make some improvement and deformation, these improve and deformation
Also should be regarded as protection scope of the present invention.
Claims (8)
1. the power device package of a high heat conduction, it is characterised in that: include high conductive flange, in described high conductive flange under
It is coated with the first barrier layer, some cushions and the second barrier layer the most successively, described second barrier layer is welded with chip.
The power device package of a kind of high heat conduction the most according to claim 1, it is characterised in that: the first barrier layer and second
Barrier layer is nickel cobalt layer.
The power device package of a kind of high heat conduction the most according to claim 1 and 2, it is characterised in that: the first barrier layer and
The thickness on the second barrier layer is 0.5 ~ 10 um.
The power device package of a kind of high heat conduction the most according to claim 1, it is characterised in that: cushion is flexible material
The cushion constituted.
5. according to the power device package of a kind of high heat conduction described in claim 1 or 4, it is characterised in that: the thickness of cushion
It is 0.05 ~ 10 um.
The power device package of a kind of high heat conduction the most according to claim 1, it is characterised in that: chip uses eutectic weldering side
Formula is welded.
The power device package of a kind of high heat conduction the most according to claim 1, it is characterised in that: coating parcel conductive flange
Surface.
The power device package of a kind of high heat conduction the most according to claim 1, it is characterised in that: coating covering part heat conduction
Flange surface, this part conductive flange surface is in order to welding chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610590550.2A CN106169448A (en) | 2016-07-26 | 2016-07-26 | A kind of power device package of high heat conduction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610590550.2A CN106169448A (en) | 2016-07-26 | 2016-07-26 | A kind of power device package of high heat conduction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106169448A true CN106169448A (en) | 2016-11-30 |
Family
ID=58065597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610590550.2A Pending CN106169448A (en) | 2016-07-26 | 2016-07-26 | A kind of power device package of high heat conduction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106169448A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN86101652A (en) * | 1985-03-14 | 1986-11-12 | 奥林公司 | semiconductor chip attaching device |
| US20070025684A1 (en) * | 2005-07-28 | 2007-02-01 | Ralf Otremba | Connection Structure Semiconductor Chip and Electronic Component Including the Connection Structure and Methods for Producing the Connection Structure |
| CN101696779A (en) * | 2009-11-12 | 2010-04-21 | 东莞勤上光电股份有限公司 | High-power LED lamp effectively lowering packaging thermal resistance |
-
2016
- 2016-07-26 CN CN201610590550.2A patent/CN106169448A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN86101652A (en) * | 1985-03-14 | 1986-11-12 | 奥林公司 | semiconductor chip attaching device |
| US20070025684A1 (en) * | 2005-07-28 | 2007-02-01 | Ralf Otremba | Connection Structure Semiconductor Chip and Electronic Component Including the Connection Structure and Methods for Producing the Connection Structure |
| CN101696779A (en) * | 2009-11-12 | 2010-04-21 | 东莞勤上光电股份有限公司 | High-power LED lamp effectively lowering packaging thermal resistance |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: Room B0604, 388 Ruoshui Road, Suzhou Industrial Park, Wuzhong District, Suzhou City, Jiangsu Province Applicant after: Suzhou Huatai Electronic Technology Co., Ltd. Address before: 215300 Xiuhai Road, Zhouzhuang Town, Kunshan City, Suzhou City, Jiangsu Province, 188 Applicant before: Kunshan Huatai Electronic Technology Co., Ltd. |
|
| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161130 |
|
| RJ01 | Rejection of invention patent application after publication |