CN106168514A - A kind of pressure sensor device - Google Patents
A kind of pressure sensor device Download PDFInfo
- Publication number
- CN106168514A CN106168514A CN201610744380.9A CN201610744380A CN106168514A CN 106168514 A CN106168514 A CN 106168514A CN 201610744380 A CN201610744380 A CN 201610744380A CN 106168514 A CN106168514 A CN 106168514A
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- pressure sensor
- sensor device
- porous
- porous dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a kind of pressure sensor device, this device includes: silicon wafer；Porous dielectric diaphragm；Described silicon wafer is affixed with described porous dielectric diaphragm；Pressure chamber, relative with bottom described silicon wafer, and be connected with the top of porous dielectric diaphragm；Electrode for capacitors, it is arranged on bottom described silicon wafer, produces for signal.The pressure sensor device of the present invention has the advantages such as work efficiency pressure signal quality high, that gather is good.
Description
Technical field
The present invention relates to stress test technical field, specifically for, the present invention relates to a kind of pressure sensor device.
Background technology
Accurately, reliable pressure measxurement be critically important to many industries, not only include fluid mapper process.And relate to protecting
Strong, agricultural, transport and other field, in science hydrodynamics, engineering, accurate pressure transducer is to basic scientific research also
It is crucial.
The sensitivity ratio of existing pressure transducer detection is relatively low, and volume is the biggest, and cost is the highest, outside it
Operation need to temperature extremes, vibration and other environmental effect relative insensitivity and with stress, strain and fatigue strength and table thereof
Other the mechanics levying prior art limits the most unrelated technology.
Summary of the invention
It is an object of the invention to provide a kind of pressure sensor device, utilize the method to can solve the problem that current sensitivity ratio
Relatively low, volume is the biggest, and cost also compares high problem.For solving the problems referred to above, the present invention proposes a kind of pressure sensing
Device, this device includes the following:
Silicon wafer；
Porous dielectric diaphragm；
Described silicon wafer is pressed close to mutually with described porous dielectric diaphragm；
Pressure chamber, relative with bottom described silicon wafer, and be connected with the top of porous dielectric diaphragm；
Electrode for capacitors, it is arranged on bottom described silicon wafer, produces for signal.
Further, bottom described silicon wafer in, it also includes the oval cross section port bottom silicon wafer.
Beneficial effect: use the design port of cross section, is conducive to more accurate when the reception and registration effect of pressure.
Further, described electrode for capacitors is that the chamber to the oval cross section port included bottom described silicon wafer is entered
The layer that row limits.
Further, described chamber is configured to be sealed relative under the vacuum of air, described porous dielectric diaphragm
It is exposed in described air.
Beneficial effect: so expose in an atmosphere, by increasing capacitance it is possible to increase the device sensitivity to pressure.
Further, described volume capacitance electrode is made up of single-wafer.
Further, described porous dielectric diaphragm, also include: porous ultra-thin membrane, apertured polymeric film or porous consolidation
One or more in silica diaphragm.
Further, described porous dielectric diaphragm, it also includes: the porous membrane of CNT, carbon nano-fiber are many
One or more in hole thin film or porous carbon nanotube mats.
Beneficial effect: volume is smaller, the sensitivity of sensor is higher, and cost is relatively low.
Accompanying drawing explanation
Fig. 1 is the profile of a kind of pressure sensor device of the present invention.
1, porous dielectric diaphragm, 2, pressure chamber, 3, electrode for capacitors
Detailed description of the invention
Being described principle and the feature of the present invention below in conjunction with accompanying drawing, example is served only for explaining the present invention, and
Non-for limiting the scope of the present invention.
As shown in fig. 1, a kind of pressure sensor device, its device includes the following:
Silicon wafer；
Porous dielectric diaphragm 1；
Described silicon wafer is pressed close to mutually with described porous dielectric diaphragm；
Pressure chamber 2, relative with bottom described silicon wafer, and be connected with the top of porous dielectric diaphragm；
Electrode for capacitors 3, it is arranged on bottom described silicon wafer, produces for signal.
In bottom described silicon wafer, it also includes the oval cross section port bottom silicon wafer.
Described electrode for capacitors is that the chamber to the oval cross section port included bottom described silicon wafer is defined
Layer.
Described chamber is configured to be sealed relative under the vacuum of air, and described porous dielectric diaphragm is exposed to
In described air.
Described volume capacitance electrode is made up of single-wafer.
Described porous dielectric diaphragm, also includes: porous ultra-thin membrane, apertured polymeric film or porous fused silica diaphragm
In one or more.
Described porous dielectric diaphragm, it also includes: the porous membrane of CNT, the porous membrane of carbon nano-fiber or
One or more in porous carbon nanotube mats.
Embodiment: in one example, silicon wafer or wafer or wafer assembly include porous dielectric diaphragm 1, should
Wafer has: bottom silicon wafer；And bottom silicon wafer port, it extends to the bottom of vibration diaphragm bottom silicon wafer.?
In one example, the cross section of bottom wafer port is oval.In one example, electrode for capacitors is arranged along silicon
Bottom of wafer is across bottom of wafer port, and in one example, chamber is provided in and is sealed relative under the vacuum of air, shakes
Dynamic barrier film is exposed in this air.In one example, sealing is airtight.
In this manual, the schematic representation of above-mentioned term is necessarily directed to identical embodiment or example.
And, the specific features of description, structure, material or feature can with in one or more embodiments in office or example with suitably
Mode combines.Additionally, in the case of the most conflicting, those skilled in the art can be by the difference described in this specification
The feature of embodiment or example and different embodiment or example is combined and combines.
Although above it has been shown and described that embodiments of the invention, it is to be understood that above-described embodiment is example
Property, it is impossible to being interpreted as limitation of the present invention, those of ordinary skill in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, revises, replaces and modification.
Claims (7)
1. a pressure sensor device, it is characterised in that this device includes:
Silicon wafer；
Porous dielectric diaphragm；
Described silicon wafer is pressed close to mutually with described porous dielectric diaphragm；
Pressure chamber, relative with bottom described silicon wafer, and be connected with the top of porous dielectric diaphragm；
Electrode for capacitors, it is arranged on bottom described silicon wafer, produces for signal.
A kind of pressure sensor device the most according to claim 1, it is characterised in that bottom described silicon wafer, there is ellipse
Cross section port.
A kind of pressure sensor device the most according to claim 2, it is characterised in that described electrode for capacitors is to including
State the layer that the chamber of the oval cross section port bottom silicon wafer is defined.
A kind of pressure sensor device the most according to claim 3, it is characterised in that described chamber is configured to relative to greatly
Being sealed under the vacuum of gas, described porous dielectric diaphragm is exposed in described air.
5. according to a kind of pressure sensor device described in claim 3 or 4, it is characterised in that described electrode for capacitors is by list
Wafer forms.
A kind of pressure sensor device the most according to claim 5, it is characterised in that described porous dielectric diaphragm also wraps
Include: one or more in porous ultra-thin membrane, apertured polymeric film or porous fused silica diaphragm.
A kind of pressure sensor device the most according to claim 6, it is characterised in that described porous dielectric diaphragm, it is also
Including: in the porous membrane of CNT, the porous membrane of carbon nano-fiber or porous carbon nanotube mats one or two with
On.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610744380.9A CN106168514A (en) | 2016-08-28 | 2016-08-28 | A kind of pressure sensor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610744380.9A CN106168514A (en) | 2016-08-28 | 2016-08-28 | A kind of pressure sensor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106168514A true CN106168514A (en) | 2016-11-30 |
Family
ID=57377061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610744380.9A Pending CN106168514A (en) | 2016-08-28 | 2016-08-28 | A kind of pressure sensor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106168514A (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87104354A (en) * | 1986-06-23 | 1988-01-20 | 罗斯蒙德公司 | Capacitive pressure transducer |
| CN1131460A (en) * | 1993-09-20 | 1996-09-18 | 罗斯蒙德公司 | Suspended diaphragm pressure sensor |
| CN2540629Y (en) * | 2002-05-13 | 2003-03-19 | 厦门大学 | Pressure sensor of electrostatic bonded sealing capacitance cavity |
| CN1936563A (en) * | 2006-10-09 | 2007-03-28 | 西南交通大学 | Gas sensor with pressure difference compensation function |
| US20090056460A1 (en) * | 2004-10-18 | 2009-03-05 | Silverbrook Research Pty Ltd | Temperature compensating pressure sensor |
| CN101669018A (en) * | 2007-03-21 | 2010-03-10 | 罗斯蒙德公司 | Sensor with composite diaphragm containing carbon nanotubes or semiconducting nanowires |
| CN101680814A (en) * | 2007-05-16 | 2010-03-24 | 罗斯蒙德公司 | Electrostatic pressure sensor with porous dielectric diaphragm |
| CN102285632A (en) * | 2010-06-18 | 2011-12-21 | 通用电气公司 | A sensor and method for fabricating the same |
| CN102313621A (en) * | 2010-06-18 | 2012-01-11 | 通用电气公司 | Sensor and manufacturing approach thereof |
| CN103221795A (en) * | 2010-09-20 | 2013-07-24 | 快捷半导体公司 | Microelectromechanical pressure sensor including reference capacitor |
| CN103994854A (en) * | 2014-04-22 | 2014-08-20 | 江苏森博传感技术有限公司 | Silicon capacitor vacuum sensor based on micro electro mechanical system (MEMS) technology |
-
2016
- 2016-08-28 CN CN201610744380.9A patent/CN106168514A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87104354A (en) * | 1986-06-23 | 1988-01-20 | 罗斯蒙德公司 | Capacitive pressure transducer |
| CN1131460A (en) * | 1993-09-20 | 1996-09-18 | 罗斯蒙德公司 | Suspended diaphragm pressure sensor |
| CN2540629Y (en) * | 2002-05-13 | 2003-03-19 | 厦门大学 | Pressure sensor of electrostatic bonded sealing capacitance cavity |
| US20090056460A1 (en) * | 2004-10-18 | 2009-03-05 | Silverbrook Research Pty Ltd | Temperature compensating pressure sensor |
| CN1936563A (en) * | 2006-10-09 | 2007-03-28 | 西南交通大学 | Gas sensor with pressure difference compensation function |
| CN101669018A (en) * | 2007-03-21 | 2010-03-10 | 罗斯蒙德公司 | Sensor with composite diaphragm containing carbon nanotubes or semiconducting nanowires |
| CN101680814A (en) * | 2007-05-16 | 2010-03-24 | 罗斯蒙德公司 | Electrostatic pressure sensor with porous dielectric diaphragm |
| CN102285632A (en) * | 2010-06-18 | 2011-12-21 | 通用电气公司 | A sensor and method for fabricating the same |
| CN102313621A (en) * | 2010-06-18 | 2012-01-11 | 通用电气公司 | Sensor and manufacturing approach thereof |
| CN103221795A (en) * | 2010-09-20 | 2013-07-24 | 快捷半导体公司 | Microelectromechanical pressure sensor including reference capacitor |
| CN103994854A (en) * | 2014-04-22 | 2014-08-20 | 江苏森博传感技术有限公司 | Silicon capacitor vacuum sensor based on micro electro mechanical system (MEMS) technology |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161130 |