CN103994854A - Silicon capacitor vacuum sensor based on micro electro mechanical system (MEMS) technology - Google Patents
Silicon capacitor vacuum sensor based on micro electro mechanical system (MEMS) technology Download PDFInfo
- Publication number
- CN103994854A CN103994854A CN201410162059.0A CN201410162059A CN103994854A CN 103994854 A CN103994854 A CN 103994854A CN 201410162059 A CN201410162059 A CN 201410162059A CN 103994854 A CN103994854 A CN 103994854A
- Authority
- CN
- China
- Prior art keywords
- silicon
- electric capacity
- mems
- vacuum
- mechanical system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
A silicon capacitor vacuum sensor based on micro electro mechanical system (MEMS) technology relates to the field of micro electro mechanical system (MEMS) sensor and vacuum sensor manufacture. The silicon capacitor vacuum sensor comprises an upper polar plate, a lower polar plate, a middle insulating layer, a vacuum cavity and electrical lead bonding pads on the upper polar plate and the lower polar plate. The vacuum cavity is a sealed cavity formed by the upper polar plate and the middle insulating layer, or the upper polar plate, the middle insulating layer and the lower polar plate. The vacuum cavity is internally provided with an insulation support column array. A gap is left between each top surface of each insulation support column and the upper polar plate. The silicon capacitor vacuum sensor can effectively measure high vacuum degree; the vacuum degree coverage range is large; manufacture process is simple; and the problems of sensitive film breaking, adherence failure and the used glass material outgassing and the like in a miniature capacitor film sensor in the prior art are effectively solved.
Description
Technical field
The present invention relates to MEMS (micro electro mechanical system) (MEMS) sensor, relate in particular to a kind of silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology.
Background technology
The disclosed micro capacitance film vacuum of prior art sensor comprises: " the capacitance type minitype vacuum transducer based on MEMS technology " studied by (1) Xiamen University, as shown in Figure 1, this condenser type vacuum transducer has two cavitys, cavity is wherein a vacuum chamber, cavity is below that bonding forms, and this cavity does not seal.This vacuum transducer has adopted the sandwich structure of glass-silicon-glass, glass by glass substrate, bottom electrode, insulation course, silicon diaphragm (top electrode), upper strata sealing use forms, wherein bottom electrode sputters in glass substrate, the insulation course of growing on electrode, silicon fiml is that the dual surface lithography, diffusion and the anisotropic corrosion technique that utilize silicon chip form.Main p+ silicon etch stop technology and the anode linkage fabrication techniques of adopting, the measurement range of vacuum transducer is 5 * 10
-3～6 * 10
-2pa, there is higher vacuum detecting sensitivity, but its technical deficiency is that device architecture is complicated, technique is loaded down with trivial details, especially because silicon-sensitive film is only counted micron thickness, silicon fiml will be difficult to bear an easy film breaks of atmospheric pressure under atmospheric pressure environment, or cannot upspring and cause losing efficacy with glass substrate generation adhesion.Therefore, up to the present the result of this research work does not also have practical.
(2) " dynamic balance micromechanics vacuum transducer " studied by Zhejiang University, as shown in Figure 2, this condenser type vacuum transducer has also adopted the sandwich structure of glass-silicon-glass, has two cavitys, wherein cavity is above non-tight, and cavity is below a vacuum chamber as with reference to cavity.In order to make reference cavity have high vacuum tightness, used non-nonevaporable getter agent to adsorb the residual gas in reference cavity.The thickness that adopts highly doped silicon etch stop technology accurately to control silicon-sensitive film in manufacture craft produces the silicon-sensitive film that micron order is thick, adopt silicon-glass bonding techniques to form vacuum with reference to cavity, adopt blasting craft to make contact conductor in punching on glass.This sensor has two electric capacity, and one is sensitization capacitance, the variation of responsive vacuum pressure in the scope of 0-200Pa, and another,, for driving electric capacity, applies the sensing range that voltage can be expanded vacuum pressure thereon.Its sensitivity of vacuum sensing of this structure is higher, but its deficiency is that device architecture is complicated, technique is loaded down with trivial details equally, also needs to adsorb the residual gas in reference cavity with getter.Because silicon-sensitive film is only counted micron thickness, during silicon on glass bonding, under the electrostatic forcing of anode linkage high voltage (about 1000V), be very easy to silicon movable electrode to cause with glass substrate electrostatic suction inefficacy for the second time.When sensor is under atmospheric pressure environment, silicon movable electrode also may mutually adhere to glass substrate and cause losing efficacy under immense pressure effect.Equally, up to the present the result of this research work does not also have practical application.
The existing capacitor thin film vacuum transducer based on MEMS technology can obtain high sensitivity, for 5 * 10
-3the detection of Pa vacuum tightness, but its device architecture is complicated, technique is loaded down with trivial details, especially count micron thickness, grade size silicon-sensitive film under atmospheric pressure film breaks or with the sticking problem of substrate, cause being difficult to practical application.Its chief reason comprises:
A) contradiction that the high sensitivity of capacitor thin film vacuum transducer and super large pressure (atmospheric pressure) overload requires is difficult to be in harmonious proportion;
B) sensor construction is complicated, adopts the sandwich structure of glass-silicon-glass, needs upper and lower two cavitys;
C) difficulty in process, MEMS processing compatibility, the p+ silicon etch stop of the silicon-sensitive film that during as silicon-glass anodic bonding, high voltage causes and the adhesive problem of substrate, making gettering material film;
D) processing step is loaded down with trivial details, tediously long, and risk of failure is large.
Summary of the invention
The present invention is directed to above-mentioned the deficiencies in the prior art, the micro capacitance thin film sensor sensitive thin film that provide that a kind of effective measurement high vacuum, covering vacuum degree scope are large, manufacture craft simple, solves prior art breaks, the silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology of adhesion failure and glass material venting problem.
The present invention is for solving the problems of the technologies described above, provide following technical scheme: a kind of silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology, comprise top crown, bottom crown, intermediate insulating layer, electrical lead pad on vacuum chamber and upper bottom crown, it is characterized in that vacuum chamber is the annular seal space forming between top crown and intermediate insulation interlayer or top crown, intermediate insulating layer and bottom crown, in vacuum chamber, be designed with insulating supporting post array, between the top end face of described insulating supporting post and top crown, leave space.
As preferably, top crown is silicon-sensitive film, and the thickness of described silicon-sensitive film is 0.5-20um, and silicon-sensitive film is preferably monocrystalline silicon sensitive thin film, according to the difference of manufacturing process, can be also polysilicon sensitive thin film or amorphous silicon sensitive thin film.
The effect of intermediate insulating layer be realize to the physical support of silicon-sensitive film and with the electrical isolation of bottom crown, selection is the insulating material with silicon impermeability bonding, and the insulating material of itself and silicon impermeability bonding is preferably the compound of silicon dioxide or silicon dioxide layer and silicon nitride layer.The thickness of intermediate insulating layer is preferably 0.5-5um.
Insulating supporting post array is selected the material identical with intermediate insulating layer conventionally, guaranteeing that silicon-sensitive film does not break, under the condition of not plastic yield, size and the interval of by optimization Simulation, determining insulating supporting post, the design of insulating supporting post can have very large design freedom.More specifically, each insulating supporting post in insulating supporting post array is evenly distributed or non-uniform Distribution, the shape of insulating supporting post xsect and size dimension can be for identical or different, shape can be circular, square or other any cross sectional shapes that can play supporting function, and the cross-sectional area of insulating supporting post is preferably 1um
2-1mm
2, the spacing between insulating supporting post can be for identical or different, and the scope of the spacing between insulating supporting post is 0-800 micron, preferably 50-100 micron.
Bottom crown of the present invention, the conventional silicon substrate of selecting, silicon substrate is preferably low-resistance silicon, and now low-resistance silicon substrate is directly as the lower plate plate of sensitization capacitance.When silicon electric capacity vacuum transducer is applied in when used the wireless vacuum transducer aspect of radio-frequency technique, in order to reduce the loss of substrate, can in resistance silicon or High Resistivity Si as backing material.When using High Resistivity Si as backing material, can adulterate on HR-Si substrate surface and make the hearth electrode of silicon electric capacity vacuum transducer.
Above-mentioned silicon electric capacity vacuum, electric capacity when its initial capacitance is complete vacuum comprises ingredient in " constant initial capacitance " and " transformable initial capacitance " two, the capacitance that reduces constant initial capacitance can improve the relative variation of sensitization capacitance, thereby improves the detection sensitivity of silicon electric capacity vacuum transducer.Guaranteeing that under the prerequisite of vacuum cavity bonded seal, silicon-sensitive film can be by reducing its marginal portion, to reduce the not changing unit of the electric capacity of silicon electric capacity vacuum transducer.For guaranteeing that silicon-silicon bond closes the impermeability of cavity, marginal portion size can, for tens of microns are to hundreds of microns, specifically need the marginal portion size retaining to determine by technological experiment.
Silicon electric capacity vacuum transducer of the present invention, its contact conductor stray capacitance that all can introduce pF magnitude the same as other capacitive transducer, this stray capacitance can increase the total capacitance of sensor, reduces the relative variation of sensitization capacitance.In order to reduce lead-in wire stray capacitance as far as possible, the electrical lead pad of the upper and lower battery lead plate of described silicon electric capacity vacuum transducer is preferably arranged on chip both sides, spaces out, to reduce the parasitic stray capacitance of sensor electrode lead-in wire as far as possible.
Insulating supporting post array in vacuum chamber of the present invention, can effectively protect silicon-sensitive film film under atmospheric pressure not break and avoid silicon-sensitive film to contact the adhesion failure that may cause with the large area of silicon substrate.In addition, the main material of manufacturing electric capacity vacuum chamber is silicon, do not use the Pyrex glass material that micro electro mechanical system (MEMS) technology is conventional, effectively prevented glass material " venting " characteristic in vacuum system, the problem of having avoided the vacuum tightness in vacuum chamber to change or destroy, make electric capacity vacuum cavity of the present invention in the situation that not using " getter ", there is too fabulous vacuum tightness.
Further, silicon electric capacity vacuum transducer of the present invention can be placed on same silicon with the reference capacitance of same structure simultaneously, forms a pair of differential capacitance, realizes the high-acruracy survey of vacuum tightness, and the cavity of described reference capacitance is communicated with extraneous environment to be measured.Because reference capacitance adopts the structure and parameter identical with silicon electric capacity vacuum transducer of the present invention, there is identical electric capacity initial value, because its cavity is communicated with extraneous environment to be measured, the capacitance of reference capacitance does not change with vacuum environment vacuum tightness to be measured, forms a pair of differential capacitance with the sensitization capacitance of silicon electric capacity vacuum transducer of the present invention.It is non-linear that reference capacitance can reduce vacuum transducer, eliminates the impacts of factor on silicon electric capacity vacuum transducer measuring accuracy such as ambient temperature changes, electric capacity drifts about, aging.When measurement environment vacuum tightness, the capacitance of sensitization capacitance changes with the variation of vacuum pressure and other extraneous factors (as temperature), and the capacitance of reference capacitance only changes with the variation of other extraneous factors, with vacuum pressure, do not change, both numerical value subtract each other just can obtain the relation that capacitance only changes with vacuum pressure, thereby realizes the function of silicon electric capacity vacuum transducer high-acruracy survey.
As further extension of the present invention, many silicon electric capacity vacuum transducers that are mutually connected with vacuum tightness sensing range of the present invention can be designed on same silicon simultaneously, form super large range silicon electric capacity vacuum transducer.These sensors adopt identical manufacturing technology steps, generally only need to change the size of silicon-sensitive film, their thickness is identical, can adopt same technique, on a silicon chip, produce the silicon electric capacity vacuum transducer of different vacuum tightness sensing ranges simultaneously.The silicon-sensitive film dimensions of black vacuum survey sensor is less, and its vacuum sensitivity is lower, can be for measuring black vacuum; The silicon-sensitive film dimensions of high vacuum survey sensor is larger, and its vacuum sensitivity is higher, can be for measuring high vacuum.For example, when the thickness of silicon thin film is several microns, the silicon thin film size of black vacuum survey sensor is about hundreds of microns to 1 millimeter of magnitude, and the silicon thin film size of high vacuum survey sensor arrives to 10 millimeters of magnitudes at 1 millimeter.When the thickness of sensor silicon thin film increases, its silicon thin film size needs corresponding increasing.Measurement data by 2 or 3 silicon electric capacity vacuum transducers merges, and can realize and cover 10
-5-10
5pa vacuum ranges, covers up to the vacuum tightness of 10 orders of magnitude, large quantum jump coverage at the bottom of the vacuum of 3-4 the order of magnitude of traditional vacuum sensor.So only need single vacuum sensor chip just can realize the measurement that is pressed onto high vacuum from atmosphere, greatly reduced volume, the cost of vacuum transducer.Realization covers up to the vacuum tightness of 10 orders of magnitude, mainly has benefited from silicon electric capacity vacuum transducer super large pressure overload capacity of the present invention.Vacuum measurement data fusion method includes but not limited to, when measuring black vacuum, highly sensitive high vacuum survey sensor is in overload, but can not damage, and adopts the measured value of black vacuum survey sensor of muting sensitivity as output; When measuring high vacuum, the output of the black vacuum survey sensor of muting sensitivity is very little, adopts the measured value of highly sensitive high vacuum survey sensor as output; When the filtration zone of vacuum tightness in black vacuum and high vacuum, two sensors all have output, can get the measured value of one of them sensor or the mean value of two measurement value sensors as last measurement output.
Key problem in technology of the present invention is that not significantly being both of the present invention and prior art is to have designed in vacuum chamber insulating supporting post array; its effect is to transship at super large pressure at protection silicon-sensitive film; as 1 atmospheric pressure, silicon-sensitive film does not break and avoids silicon-sensitive film to contact the adhesion failure that may cause with the large area of silicon substrate.In order to realize the detection of condition of high vacuum degree, vacuum transducer must adopt highly sensitive silicon-sensitive film, and the detection range of general high vacuum sensor is designed to 1Pa to 10Pa, and high-sensitive capacitive detection circuit can differentiate 10
-5the vacuum tightness of Pa, but under 1 atmospheric pressure environment, the overload of vacuum transducer is up to 10,000 to 100,000 times, well beyond the overload capacity of common capacitive pressure transducer (conventionally tens to hundred times), as do not have particular design, silicon-sensitive film will break (when gap is larger) or directly fit on substrate (gap hour).If silicon-sensitive film directly fits on substrate, to exist very large risk that silicon-sensitive film is adhered to substrate and cannot upspring and cause sensor failure, this is very common " adhesion effect " in micro electro mechanical system (MEMS) technology, especially in the situation that transship with the long-term super large pressure of sensor in the manufacture process of sensor.By insulating supporting post array of the present invention, silicon-sensitive film for super large pressure overload provides support dexterously, also greatly reduced the fitting area of silicon-sensitive film and substrate, thereby fundamentally eliminated silicon-sensitive film, contacted with the large area of silicon substrate the adhesion failure causing simultaneously.
Beneficial effect of the present invention: 1) introduce insulating supporting post array as silicon-sensitive film support and the anti-adhesion arrangement when the large pressure overload, efficiently solve the high sensitivity of silicon electric capacity vacuum transducer and the contradiction that super large pressure (atmospheric pressure) overload requires, can be not damaged when vacuum transducer not only runs into atmospheric pressure or solution in manufacture process, and in use can bear 1 atmospheric super large overload, and can under atmospheric pressure preserve for a long time and do not lose efficacy.
2) the super large pressure of silicon electric capacity vacuum transducer (atmospheric pressure) overload capacity, guaranteed that the vacuum tightness that silicon electric capacity vacuum transducer of the present invention can be realized up to 10 magnitudes by the combination of multisensor detects covering, and the combination of this sensor can once have been manufactured by identical manufacturing process;
3) silicon electric capacity vacuum transducer is simple in structure, adopts the double-deck complete silicon structure of silicon-silicon, and without material outgassing problem, reliability is high, can also be applied to the vacuum measurement of hot environment;
4) the present invention adopts bulk silicon micro mechanic technique or surface micromechanical process to make, and its manufacturing process is ripe, stable, and technological process is simple, can manufacture in batches, and fabrication yield is high, significantly reduces costs.
Accompanying drawing explanation
Fig. 1 is the structural representation of the capacitance type minitype vacuum transducer based on MEMS technology in prior art.
Fig. 2 is the structural representation of prior art dynamic balance micromechanics vacuum transducer.
Fig. 3 is front view of the present invention.
Fig. 4 is the vertical view of Fig. 3.
Fig. 5 shows silicon-sensitive thin film at SiO
2the deformational displacement of part on micro-support column array.
Fig. 6 shows silicon-sensitive thin film at SiO
2the stress situation of part on micro-support column array.
Fig. 7 is that silicon-sensitive thin film is at SiO
2the stress situation of integral body on micro-support column array.
Fig. 8 is the graph of relation between air pressure and the maximum displacement of silicon-sensitive film.
Fig. 9 is differential capacitance vacuum transducer.
Figure 10 is super large range silicon electric capacity vacuum transducer structural representation.
Embodiment
Embodiment 1: a kind of silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology, comprise top crown 001, bottom crown 002, intermediate insulating layer 003, vacuum chamber 004 and upper bottom crown (001, 002) the electrical lead pad 005 on, top crown 001 is silicon-sensitive film, vacuum chamber 004 is top crown 001, the annular seal space of intermediate insulating layer 003 and 002 formation of bottom crown, in vacuum chamber 004, be designed with insulating supporting post 006 array, 001 of the top end face of described insulating supporting post 006 and top crown leave space, the thickness of described silicon-sensitive film is 5um, described intermediate insulating layer 003 is silicon dioxide, intermediate insulating layer 003 thickness is 2um, each insulating supporting post 006 in insulating supporting post 006 array is evenly distributed, insulating supporting post 006 xsect be shaped as circle, big or small and measure-alike, the cross-sectional area of insulating supporting post 006 is 50um
2, the spacing between insulating supporting post 006 is identical, and spacing is 100 microns.
Embodiment 2: with reference to embodiment 1, the thickness of silicon-sensitive film is 10um, intermediate insulating layer 003 thickness is 5um, each insulating supporting post in insulating supporting post 006 array is non-uniform Distribution, being shaped as of insulating supporting post 006 xsect is square, size is not identical with size, and the cross-sectional area of insulating supporting post 006 is at 1um
2-1mm
2between, the spacing between insulating supporting post 006 is identical, and spacing is 500 microns.
Embodiment 3, reference example 1, vacuum chamber 004 is the annular seal space of top crown 001 and 003 formation of intermediate insulating layer, described intermediate insulating layer 003 is the compound of silicon dioxide layer and silicon nitride layer, intermediate insulation bed thickness 3 um, and the thickness of silicon-sensitive film is 0.5um, each insulating supporting post in insulating supporting post 006 array is non-uniform Distribution, insulating supporting post 006 xsect be shaped as circle, big or small and measure-alike, the cross-sectional area of insulating supporting post 006 is 100um
2, the spacing between insulating supporting post 006 is not identical, and spacing is between 0-800 micron.
Embodiment 4, reference example 1, vacuum chamber 004 is the annular seal space of top crown 001 and 003 formation of intermediate insulating layer, described intermediate insulating layer 003 is the compound of silicon dioxide layer and silicon nitride layer, and the thickness of silicon-sensitive film is 20um, and intermediate insulating layer 003 thickness is 0.5um, each insulating supporting post 006 in insulating supporting post 006 array is non-uniform Distribution, insulating supporting post 006 xsect be shaped as circle, size is not identical with size, the cross-sectional area of insulating supporting post 006 is at 1um
2-1mm
2between, the spacing between insulating supporting post 006 is not identical, and spacing is between 50-100 micron.
Embodiment 5, a kind of silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology, the reference capacitance of one of embodiment 1-4 or similarly sensitization capacitance and same structure is placed on same silicon simultaneously, form a pair of differential capacitance, the cavity of described reference capacitance is communicated with extraneous environment to be measured, can realize the high-acruracy survey of vacuum tightness.
Embodiment 6: a kind of silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology, many the silicon electric capacity vacuum transducers (structure reference example 1-4 and similar) that vacuum tightness sensing range is connected mutually design on same silicon simultaneously, form super large range silicon electric capacity vacuum transducer.
The manufacture craft of the above embodiment of the present invention can be used bulk silicon micro mechanic technique or surface micromechanical process.
The following detection case when carrying out the lower situation of simulation analysis silicon-sensitive diaphragm pressure overload and normal measurement:
1) at an atmospheric pressure, be, under overload situations, vacuum transducer of the present invention is carried out to emulation: in Fig. 5 and Fig. 6, silicon-sensitive thin film is about 4 nanometers in the deformation of insulating supporting post array portion, stress maximum is about 15MPa, silicon-sensitive film does not touch silicon substrate short circuit, and the fracture strength 6.9GPa that also can not reach silicon ruptures; In Fig. 7, silicon-sensitive film center section is supported by insulating supporting post array, and marginal portion stress maximum is about 35MPa, does not also reach the fracture strength 6.9GPa of silicon, can not rupture, silicon-sensitive film of the present invention can not break under an atmospheric overload.
2) 10
-4pa is in the situation of 1Pa, and from Fig. 8 air pressure and maximum displacement curve, in this air pressure range, the maximum displacement at air pressure and electric capacity top crown center is directly proportional.By C=ε
0s/d, do not stress and effect at 0.0001Pa under, capacitance change is △ C ≈ ε
0s * △ d/d^2, one group of data of substitution (capacitor board initial separation d=2um, silicon-sensitive film radius r=3mm) can be tried to achieve △ C and are about 0.22fF, and the capacitance change from vacuum to 0.0001Pa is about 0.22fF; The capacitance change that in like manner can try to achieve from vacuum to 0.001Pa is about 2.2fF, therefore want to detect the variation of air pressure from 0.0001Pa to 0.001Pa, circuit need to be identified the capacitance variations of 2.2-0.22 ≈ 2fF, and according to present technology, the capacitance variations of 2fF detects and can realize.Thereby also solved detection air pressure from 10
-4pa changes to a difficult problem of 1Pa, has very high vacuum detecting sensitivity.
Claims (12)
1. the silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology, comprise the electrical lead pad on top crown, bottom crown, intermediate insulating layer, vacuum chamber and upper bottom crown, it is characterized in that vacuum chamber is the annular seal space forming between top crown and intermediate insulation interlayer or top crown, intermediate insulating layer and bottom crown, in vacuum chamber, be designed with insulating supporting post array, between the top end face of described insulating supporting post and top crown, leave space.
2. a kind of silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology according to claim 1, is characterized in that top crown is silicon-sensitive film, and the thickness of described silicon-sensitive film is 0.5-20um.
3. a kind of silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology according to claim 1, is characterized in that intermediate insulating layer is the insulating material with silicon impermeability bonding.
4. a kind of silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology according to claim 3, is characterized in that intermediate insulating layer is the compound of silicon dioxide or silicon dioxide layer and silicon nitride layer.
5. a kind of silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology according to claim 3, the thickness that it is characterized in that intermediate insulating layer is 0.5-5um.
6. a kind of silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology according to claim 1, is characterized in that each insulating supporting post in insulating supporting post array is evenly distributed or non-uniform Distribution.
7. a kind of silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology according to claim 6, is characterized in that the shape of insulating supporting post xsect is identical with size dimension or different.
8. a kind of silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology according to claim 7, the cross-sectional area that it is characterized in that insulating supporting post is 1um
2-1mm
2.
9. a kind of silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology according to claim 6, is characterized in that the spacing between insulating supporting post is identical or different.
10. a kind of silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology according to claim 9, is characterized in that the spacing between insulating supporting post is 0-800 micron.
A kind of silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology described in 11. claim 1-10 is placed on same silicon with the reference capacitance of same structure simultaneously, forms a pair of differential capacitance, and the cavity of described reference capacitance is communicated with extraneous environment to be measured.
A kind of silicon electric capacity vacuum transducer based on micro electro mechanical system (MEMS) technology described in 12. claim 1-10, many silicon electric capacity vacuum transducers that vacuum tightness sensing range is connected mutually design on same silicon simultaneously, form super large range silicon electric capacity vacuum transducer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410162059.0A CN103994854A (en) | 2014-04-22 | 2014-04-22 | Silicon capacitor vacuum sensor based on micro electro mechanical system (MEMS) technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410162059.0A CN103994854A (en) | 2014-04-22 | 2014-04-22 | Silicon capacitor vacuum sensor based on micro electro mechanical system (MEMS) technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103994854A true CN103994854A (en) | 2014-08-20 |
Family
ID=51309081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410162059.0A Pending CN103994854A (en) | 2014-04-22 | 2014-04-22 | Silicon capacitor vacuum sensor based on micro electro mechanical system (MEMS) technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103994854A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104848982A (en) * | 2015-05-29 | 2015-08-19 | 歌尔声学股份有限公司 | Quasi-differential-capacitor type MEMS pressure sensor and manufacturing method thereof |
| CN105181186A (en) * | 2015-05-29 | 2015-12-23 | 歌尔声学股份有限公司 | Pressure sensing element and manufacturing method thereof |
| CN106092153A (en) * | 2016-07-28 | 2016-11-09 | 歌尔股份有限公司 | A kind of environmental sensor and manufacture method thereof |
| CN106168514A (en) * | 2016-08-28 | 2016-11-30 | 桂林市晶准测控技术有限公司 | A kind of pressure sensor device |
| CN107976277A (en) * | 2016-10-20 | 2018-05-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Vacuum transducer based on graphene oxide and preparation method and application |
| CN108534921A (en) * | 2018-03-26 | 2018-09-14 | 京东方科技集团股份有限公司 | Pressure sensor, display device |
| CN109238518A (en) * | 2018-09-17 | 2019-01-18 | 胡耿 | Capacitive force-sensing element and its manufacturing method |
| CN109799026A (en) * | 2019-03-19 | 2019-05-24 | 中国电子科技集团公司第十三研究所 | MEMS pressure sensor and preparation method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1092164A (en) * | 1992-09-01 | 1994-09-14 | 罗斯蒙德公司 | High overpressure low range pressure sensor |
| CN102297741A (en) * | 2010-06-25 | 2011-12-28 | 中国科学院电子学研究所 | Silicon resonant air pressure sensor based on Micro-Electro-Mechanical Systems |
| US20140104184A1 (en) * | 2012-10-11 | 2014-04-17 | Qualcomm Mems Technologies, Inc. | Backplate electrode sensor |
| CN203811323U (en) * | 2014-04-22 | 2014-09-03 | 江苏森博传感技术有限公司 | Silicon capacitance vacuum sensor based on technology of micro-electro-mechanical system |
-
2014
- 2014-04-22 CN CN201410162059.0A patent/CN103994854A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1092164A (en) * | 1992-09-01 | 1994-09-14 | 罗斯蒙德公司 | High overpressure low range pressure sensor |
| CN102297741A (en) * | 2010-06-25 | 2011-12-28 | 中国科学院电子学研究所 | Silicon resonant air pressure sensor based on Micro-Electro-Mechanical Systems |
| US20140104184A1 (en) * | 2012-10-11 | 2014-04-17 | Qualcomm Mems Technologies, Inc. | Backplate electrode sensor |
| CN203811323U (en) * | 2014-04-22 | 2014-09-03 | 江苏森博传感技术有限公司 | Silicon capacitance vacuum sensor based on technology of micro-electro-mechanical system |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104848982A (en) * | 2015-05-29 | 2015-08-19 | 歌尔声学股份有限公司 | Quasi-differential-capacitor type MEMS pressure sensor and manufacturing method thereof |
| CN105181186A (en) * | 2015-05-29 | 2015-12-23 | 歌尔声学股份有限公司 | Pressure sensing element and manufacturing method thereof |
| CN105181186B (en) * | 2015-05-29 | 2017-10-03 | 歌尔股份有限公司 | A kind of pressure sensor and its manufacture method |
| CN104848982B (en) * | 2015-05-29 | 2018-01-19 | 歌尔股份有限公司 | Quasi- differential capacitance type MEMS pressure sensor and its manufacture method |
| US10295422B2 (en) | 2015-05-29 | 2019-05-21 | Goertek.Inc | Quasi-differential capacitive MEMS pressure sensor and manufacturing methods thereof |
| CN106092153A (en) * | 2016-07-28 | 2016-11-09 | 歌尔股份有限公司 | A kind of environmental sensor and manufacture method thereof |
| CN106168514A (en) * | 2016-08-28 | 2016-11-30 | 桂林市晶准测控技术有限公司 | A kind of pressure sensor device |
| CN107976277A (en) * | 2016-10-20 | 2018-05-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Vacuum transducer based on graphene oxide and preparation method and application |
| CN108534921A (en) * | 2018-03-26 | 2018-09-14 | 京东方科技集团股份有限公司 | Pressure sensor, display device |
| CN109238518A (en) * | 2018-09-17 | 2019-01-18 | 胡耿 | Capacitive force-sensing element and its manufacturing method |
| CN109799026A (en) * | 2019-03-19 | 2019-05-24 | 中国电子科技集团公司第十三研究所 | MEMS pressure sensor and preparation method |
| CN109799026B (en) * | 2019-03-19 | 2021-12-17 | 中国电子科技集团公司第十三研究所 | MEMS pressure sensor and preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103994854A (en) | Silicon capacitor vacuum sensor based on micro electro mechanical system (MEMS) technology | |
| EP2806258B1 (en) | Differential pressure sensor | |
| US7150195B2 (en) | Sealed capacitive sensor for physical measurements | |
| US10809140B2 (en) | Pressure sensor generating a transduced signal with reduced ambient temperature dependence, and manufacturing method thereof | |
| US10551263B2 (en) | MEMS pressure sensing element | |
| US7563692B2 (en) | Microelectromechanical system pressure sensor and method for making and using | |
| EP0720731B1 (en) | Suspended diaphragm pressure sensor | |
| EP2637007B1 (en) | MEMS capacitive pressure sensor | |
| US6874367B2 (en) | Pressure sensor | |
| US7305889B2 (en) | Microelectromechanical system pressure sensor and method for making and using | |
| CN106404237B (en) | Pressure sensor chip, preparation method thereof and absolute pressure sensor chip | |
| EP1286147A1 (en) | Capacitive absolute pressure sensor | |
| US10145750B2 (en) | MEMS pressure sensing element | |
| US20110023618A1 (en) | Low pressure sensor device with high accuracy and high sensitivity | |
| US20100031752A1 (en) | Pressure sensor with resistance strain gages | |
| US10495535B2 (en) | Differential capacitive MEMS pressure sensor and manufacturing method thereof | |
| US20150330856A1 (en) | Pressure sensor device with high sensitivity and high accuracy | |
| US8334159B1 (en) | MEMS pressure sensor using capacitive technique | |
| CN203811323U (en) | Silicon capacitance vacuum sensor based on technology of micro-electro-mechanical system | |
| CN103196596B (en) | Nanometer film pressure sensor based on sacrificial layer technology and manufacturing method thereof | |
| CN204881934U (en) | Pressure sensing component | |
| CN114314498B (en) | MEMS film vacuum gauge and preparation method thereof | |
| US8146439B2 (en) | Sensor system and method for manufacturing a sensor system | |
| US10422713B2 (en) | Pressure sensor suited to measuring pressure in an aggressive environment | |
| CN203132745U (en) | Nano-film pressure sensor based on sacrificial layer technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140820 |
|
| RJ01 | Rejection of invention patent application after publication |