CN106158916A - Quantum dot film, its manufacture method and display device - Google Patents

Quantum dot film, its manufacture method and display device Download PDF

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Publication number
CN106158916A
CN106158916A CN201610742776.XA CN201610742776A CN106158916A CN 106158916 A CN106158916 A CN 106158916A CN 201610742776 A CN201610742776 A CN 201610742776A CN 106158916 A CN106158916 A CN 106158916A
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China
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quantum dot
hydrophilic
hydrophobic
mask plate
region
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CN201610742776.XA
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CN106158916B (en
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顾辛艳
甄常刮
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Najing Technology Corp Ltd
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Najing Technology Corp Ltd
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Priority to CN201610742776.XA priority Critical patent/CN106158916B/en
Publication of CN106158916A publication Critical patent/CN106158916A/en
Priority to PCT/CN2017/098811 priority patent/WO2018036542A1/en
Priority to US16/328,290 priority patent/US10943781B2/en
Priority to JP2019531517A priority patent/JP2019525446A/en
Priority to KR1020197007403A priority patent/KR102387760B1/en
Application granted granted Critical
Publication of CN106158916B publication Critical patent/CN106158916B/en
Priority to US17/012,086 priority patent/US20230276685A9/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention provides a kind of quantum dot film, its manufacture method and display device.The manufacture method of this quantum dot film includes: step S1, forms hydrophilic region and hydrophobic region on the first surface of transparent substrates;Step S2, the surface modification mask plate with multiple hollow-out parts is arranged on first surface, and make the hollow-out parts correspondence hydrophilic region in surface modification mask plate or hydrophobic region arrange, surface modification mask plate has the first modified surface and the second modified surface, and the first modified surface and the second modified surface are respectively provided with hydrophilic and hydrophobicity;Step S3, the first modified surface is hydrophobic surface, makes hydrophobic quantum dot ink be entered in hydrophobic region by hollow-out parts, or the first modified surface is hydrophilic surface, makes hydrophilic quantum dot ink be entered in hydrophilic region by hollow-out parts;Step S4, by the quantum dot ink dried in hydrophilic region or hydrophobic region.Above-mentioned manufacture method reduces the cost of manufacture of quantum dot film.

Description

Quantum dot film, its manufacture method and display device
Technical field
The present invention relates to optical technical field, in particular to a kind of quantum dot film, its manufacture method and display Part.
Background technology
Along with the development of science and technology, the requirement of display image quality is constantly promoted by people, QLED (quantum dot light emitting Diode) show that with its high color purity, color saturation and wide colour gamut be considered as the most representational Display Technique in future. At present QLED device mainly utilizes solwution method processing procedure to make, such as inkjet printing, silk screen printing, spin coating, slot coated etc., due to The pixel of display is the least, and the coating of current sub-pixel typically utilizes InkJet printing processes selectively applied to carry out, and is i.e. having In the RGB sub-pixel groove that pixel isolation structure is constructed, nozzle is utilized to print R, G, B quantum dot ink successively.Due to the most blue Light QLED device inefficient, directly utilizes quantum dot and constructs the QLED device that RGB shows and also acquire a certain degree of difficulty, and traditional The blue light development of LED Yu OLED is more ripe, therefore can utilize RG photic combination LED or the OLED blue light electroluminescence of quantum dot Realize the mode that RGB shows, can comparatively fast realize in a short time.
On the other hand, utilize that the pixel isolation structural manufacturing process that gold-tinted technique makes is complicated, involve great expense, and the ink-jet of precision Printing device puts into the highest, and the popularization for new technique adds difficulty.
Summary of the invention
A kind of quantum dot film of offer, its manufacture method and display device are provided, existing to solve Technology utilizes the pixel isolation structural manufacturing process complexity that gold-tinted technique makes and the problem involved great expense.
To achieve these goals, according to an aspect of the invention, it is provided the manufacture method of a kind of quantum dot film, wrap Include following steps: step S1, the first surface of transparent substrates is formed hydrophilic region and hydrophobic region;Step S2, will have The surface modification mask plate of multiple hollow-out parts is arranged on first surface, and makes the hollow-out parts correspondence parent in surface modification mask plate Aqua region or hydrophobic region are arranged, and surface modification mask plate has modified surface, and modified surface includes the first modified surface and the Two modified surfaces, the first modified surface is around hollow-out parts, and the modified surface outside the first modified surface is the second modified surface, the Modified surface is different with the second modified surface and is respectively selected from the one in hydrophilic surface and hydrophobic surface, and first changes Property surface is positioned at the side away from first surface of surface modification mask plate;Step S3, the first modified surface is hydrophobic surface, Make hydrophobic quantum dot ink be entered in hydrophobic region by hollow-out parts, or the first modified surface is hydrophilic surface, makes parent The quantum dot ink of aqueous is entered in hydrophilic region by hollow-out parts;Step S4, by the quantum in hydrophilic region or hydrophobic region Point ink dried.
Further, step S1 includes: step S11, and the surface configuration at transparent substrates includes the former of the first reaction raw materials Material;Step S12, hides the first reaction raw materials being positioned at first area, and the first reaction raw materials being pointed to second area is carried out Ultraviolet light irradiates, and the first reaction raw materials forms the second masked areas at second area;Step S13, removes the first of first area Reaction raw materials, arranges the second reaction raw materials on first area and the second masked areas;Step S14, hides and is positioned at the second covering Second reaction raw materials in region, and the second reaction raw materials being pointed to first area carries out ultraviolet light irradiation, the second reaction raw materials Form the first masked areas in first area, then remove the second reaction raw materials in the second masked areas, wherein, the first reaction Raw material and the second reaction raw materials are respectively selected from the one in hydrophilic reactant and hydrophobicity reactant, and the hydrophilic and hydrophobic of the two Can be contrary, the first masked areas and the second masked areas are correspondingly formed hydrophilic region and hydrophobic region.
Further, manufacture method also include prepare surface modification mask plate process: step S01, by mask plate immerse Have in the solution of hydrophobic material, so that it is fluorine-containing that hydrophobic material is fixed on the surface of mask plate, preferably hydrophobic material Silane coupler;Step S02, will be fixed with mask plate and the solution separating of hydrophobic material, and be dried mask plate Process;Step S03, is arranged at the first light shield on mask plate, and the first light shield is by multiple first occlusion parts and connects each first First transmittance section composition of occlusion part, the first occlusion part and hollow-out parts one_to_one corresponding, and the most each first occlusion part Area more than the area of each hollow-out parts, carries out ultraviolet and ozone photodissociation oxidation by the first light shield to mask plate, so that mask plate The surface of correspondence the first transmittance section formed there is hydrophilic second modified surface, the remaining surface of mask plate constitute have thin First modified surface of aqueous;Or the second light shield is arranged on mask plate, the second light shield is by multiple second transmittance sections and company Connect the second occlusion part composition of each second transmittance section, and the second transmittance section and hollow-out parts one_to_one corresponding, and the most each the The area of two transmittance sections, more than the area of each hollow-out parts, carries out ultraviolet and ozone photodissociation oxidation to mask plate, so that mask plate The surface of corresponding second transmittance section is formed has hydrophilic first modified surface, and the remaining surface composition of mask plate has hydrophobic Second modified surface of property.
Further, step S3 uses spraying coating process or InkJet printing processes so that quantum dot ink is entered by hollow-out parts In hydrophilic region or hydrophobic region.
Further, spraying coating process is ultrasonic spraying.
Further, form multiple hydrophilic region and multiple hydrophobic region on the first surface, and each hydrophilic region is with each Hydrophobic region is alternately arranged.
Further, hydrophilic quantum dot ink includes hydrophilic quantum dot, and hydrophilic quantum dot is surface ligand Quantum dot containing hydrophilic group;Hydrophobic quantum dot ink includes hydrophobicity quantum dot, and hydrophobicity quantum dot is that surface is joined The body quantum dot containing hydrophobic group.
Further, the quantum dot in quantum dot ink is red quantum point and/or green quantum dot.
According to a further aspect in the invention, it is provided that a kind of quantum dot film, quantum dot film is made by above-mentioned manufacture method Form.
According to a further aspect in the invention, additionally provide a kind of display device, display device include electroluminescent device with And it being arranged at the quantum dot film of electroluminescent device light emission side, quantum dot film is above-mentioned quantum dot film.
Application technical scheme, it is provided that the manufacture method of a kind of quantum dot film, owing to this manufacture method is passed through The first surface of transparent substrates is formed hydrophilic region and hydrophobic region, and surface modification mask plate is arranged at transparent substrates First surface on, make hollow-out parts correspondence hydrophilic region or hydrophobic region arrange, thus surface modification mask can not only be passed through Plate makes different quantum dot inks enter in different pixel regions, additionally it is possible to by the hydrophilic region on transparent substrates with thin Aqua region forms multiple subpixel area being separated on the surface of transparent substrates, makes hydrophilic quantum dot ink enter hydrophilic Region, hydrophobic region is as isolation structure, or makes hydrophobic quantum dot ink enter hydrophobic region, and hydrophilic region is as isolation Structure, thus effectively prevent the quantum dot ink blending that different subpixel is interregional, and then also efficiently solve difference Quantum dot ink blending in subpixel area and the problem that reduces color accuracy;Further, compare and picture is set on the transparent substrate The manufacture method of element isolation structure, the above-mentioned manufacture method of the application can not only similarly make the sub-pixel needed for ink injection Region, also reduces the cost of manufacture of quantum dot film simultaneously.
In addition to objects, features and advantages described above, the present invention also has other objects, features and advantages. Below with reference to figure, the present invention is further detailed explanation.
Accompanying drawing explanation
The Figure of description of the part constituting the present invention is used for providing a further understanding of the present invention, and the present invention shows Meaning property embodiment and explanation thereof are used for explaining the present invention, are not intended that inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the schematic flow sheet of the manufacture method of the electroluminescent device that embodiment of the present invention provided;With And
Fig. 2 shows the plan structure schematic diagram of a kind of surface modification mask plate that embodiment of the present invention provided.
Wherein, above-mentioned accompanying drawing includes the following drawings labelling:
10, hollow-out parts;20, modified surface;210, the first modified surface;220, the second modified surface.
Detailed description of the invention
It should be noted that in the case of not conflicting, the embodiment in the present invention and the feature in embodiment can phases Combination mutually.Describe the present invention below with reference to the accompanying drawings and in conjunction with the embodiments in detail.
In order to make those skilled in the art be more fully understood that the present invention program, below in conjunction with in the embodiment of the present invention Accompanying drawing, is clearly and completely described the technical scheme in the embodiment of the present invention, it is clear that described embodiment is only The embodiment of a present invention part rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill people The every other embodiment that member is obtained under not making creative work premise, all should belong to the model of present invention protection Enclose.
It should be noted that term " first " in description and claims of this specification and above-mentioned accompanying drawing, " Two " it is etc. for distinguishing similar object, without being used for describing specific order or precedence.Should be appreciated that so use Data can exchange in the appropriate case, in order to embodiments of the invention described herein.Additionally, term " includes " and " tool Have " and their any deformation, it is intended that cover non-exclusive comprising, such as, contain series of steps or unit Process, method, system, product or equipment are not necessarily limited to those steps or the unit clearly listed, but can include the most clear That list to Chu or for intrinsic other step of these processes, method, product or equipment or unit.
As described in background technology, before inkjet printing prepares sub-pixel on substrate in prior art, need first profit Pixel isolation structure is prepared by photoetching process, to avoid the ink generation colour mixture of adjacent subpixels, but pixel isolation structure Prepare the most of a high price with accurate ink jet printing device.Present inventor studies for the problems referred to above, it is proposed that A kind of manufacture method of quantum dot film, as it is shown in figure 1, comprise the following steps: step S1, shape on the first surface of transparent substrates Become hydrophilic region and hydrophobic region;Step S2, is arranged at the surface modification mask plate with multiple hollow-out parts on first surface, And making the hollow-out parts correspondence hydrophilic region in surface modification mask plate or hydrophobic region arrange, surface modification mask plate has modification Surface, modified surface includes the first modified surface and the second modified surface, the first modified surface around hollow-out parts, the first modified table Modified surface outside face is the second modified surface, and the first modified surface and the second modified surface are different and are respectively selected from hydrophilic One in surface and hydrophobic surface, and the first modified surface be positioned at surface modification mask plate away from the one of first surface Side;Step S3, the first modified surface is hydrophobic surface, makes hydrophobic quantum dot ink enter hydrophobic region by hollow-out parts In, or the first modified surface is hydrophilic surface, makes hydrophilic quantum dot ink be entered in hydrophilic region by hollow-out parts;Step Rapid S4, by the quantum dot ink dried in hydrophilic region or hydrophobic region.
Owing to forming hydrophilic area on the first surface of transparent substrates in the manufacture method of the above-mentioned quantum dot film of the present invention Territory and hydrophobic region, and surface modification mask plate is arranged on the first surface of transparent substrates, make hollow-out parts correspondence hydrophilic area Territory or hydrophobic region are arranged, thus different quantum dot inks can not only be made to enter into different by surface modification mask plate In pixel region, additionally it is possible to form multiple quilt by the hydrophilic region on transparent substrates and hydrophobic region on the surface of transparent substrates The subpixel area separated, makes hydrophilic quantum dot ink enter hydrophilic region, and hydrophobic region is as isolation structure, or makes to dredge The quantum dot ink of aqueous enters hydrophobic region, and hydrophilic region is as isolation structure, thus effectively prevent different subpixel Interregional quantum dot ink blending, and then also efficiently solve quantum dot ink blending in different subpixel region and reduce The problem of color accuracy;Further, comparing the manufacture method arranging pixel isolation structure on the transparent substrate, the application's is above-mentioned Manufacture method can not only similarly make the subpixel area needed for ink injection, also reduces being fabricated to of quantum dot film simultaneously This.
The illustrative embodiments of manufacture method of the quantum dot film provided according to the present invention is provided. But, these illustrative embodiments can be implemented by multiple different form, and should not be construed to be limited solely to this In the embodiment that illustrated.It should be appreciated that these embodiments are provided so that disclosure herein thoroughly and Completely, and by the design of these illustrative embodiments it is fully conveyed to those of ordinary skill in the art.
First, step S1 is performed: on the first surface of transparent substrates, form hydrophilic region and hydrophobic region.Excellent in one In the embodiment of choosing, form multiple hydrophilic region and multiple hydrophobic region on the first surface, and each hydrophilic region and each dredge Aqua region is alternately arranged.Use above-mentioned preferred embodiment can be formed on the first surface of transparent substrates multiple mutually every From subpixel area so that the quantum dot ink of different colours has respectively entered in different subpixel area, and make tool The film having this quantum dot can form light emitting array under the irradiation of Blue backlight, thus prepare quantum stippling film and realize RGB's Full-color display.
In a preferred embodiment, step S1 includes: step S11, and the surface configuration at transparent substrates includes The raw material of one reaction raw materials;Step S12, hides and is positioned at the first reaction raw materials of first area, and is pointed to the of second area One reaction raw materials carries out ultraviolet light irradiation, and the first reaction raw materials forms the second masked areas at second area;Step S13, removes First reaction raw materials of first area, arranges the second reaction raw materials on first area and the second masked areas;Step S14, hides Lid is positioned at the second reaction raw materials of the second masked areas, and the second reaction raw materials being pointed to first area carries out ultraviolet lighting Penetrating, the second reaction raw materials forms the first masked areas in first area, then removes the second reaction in the second masked areas former Material, wherein, the first reaction raw materials and the second reaction raw materials select hydrophilic reactant and hydrophobicity reactant, and the two is close and distant Performance is contrary, the first masked areas and the second corresponding hydrophilic region of masked areas and hydrophobic region.
Above-mentioned preferred embodiment in, the above-mentioned raw material including the first reaction raw materials can also include solvent, coupling Agent and initiator.Now, above-mentioned steps S11 includes procedure below: A, coupling agent and initiator is mixed in a solvent, forms base Plate treatment fluid;B, at least one side surface of transparent substrates is positioned in processing substrate liquid, makes coupling agent bonding be fixed on printing opacity On the surface of substrate and form bonding surface;C, the first reaction raw materials is arranged at bonding surface.In above-mentioned steps S12, logical Cross and be pointed to the first reaction raw materials of second area and carry out ultraviolet light irradiation, so that the first reaction raw materials shines in ultraviolet with coupling agent Penetrate down and carry out graft reaction, thus form above-mentioned second masked areas;In above-mentioned steps S14, by being pointed to first area The second reaction raw materials carry out ultraviolet light irradiation so that the second reaction raw materials and coupling agent to carry out grafting under ultra-vioket radiation anti- Should, thus form above-mentioned first masked areas.
Above-mentioned preferred embodiment in, the process of the first reaction raw materials removing first area may include that with molten Agent washes away the first reaction raw materials on first area, then the surface of transparent substrates is dried process;Similarly, the is removed The process of the second reaction raw materials in two masked areas includes: wash away the second reaction raw materials in the second masked areas with solvent, Then the surface of transparent substrates is dried process.Those skilled in the art can according to the above-mentioned cleaning of prior art and The process conditions of dried are set.
In order to make between the first reaction raw materials and coupling agent and the second reaction raw materials is preferably grafted with coupling agent Reaction, it is preferable that the formula of above-mentioned coupling agent is (X1-X2-X3-) Si-Y, wherein, Y is the group with vinyl or end strips The alkyl of SH base, X1、X2And X3Separately selected from Cl, CH3、OCH3、OCH2CH3And CH2CH3In any one, and X1、X2With X3It it is asynchronously alkyl;The formula of above-mentioned first reaction raw materials and the second reaction raw materials is A-B, and wherein, A is with vinyl Group, now Y is the alkyl of end strips SH base, or the alkyl that A is end strips SH base, and now Y is the group with vinyl, B For the residue of band hydrophilic group, now the first reaction raw materials or the second reaction raw materials are hydrophilic reactant, preferably hydrophilic group For any one or more in sulfonic group, amido, hydroxyl, carboxyl and amino, or the residue that B is band hydrophobic group, now first Reaction raw materials or the second reaction raw materials be hydrophobicity reactant, preferably hydrophilic group be in alkyl, ester group, halogen and nitro appoint One or more.
After performing step S1, perform step S2: be arranged on first surface by above-mentioned surface modification mask plate, table The corresponding hydrophilic region of hollow-out parts 10 in face modification mask plate or hydrophobic region are arranged, and surface modification mask plate has modified surface 20, modified surface 20 includes the first modified surface 210 and the second modified surface 220, and the first modified surface 210 is around hollow-out parts 10, the modified surface 20 outside the first modified surface 210 is the second modified surface 220, and the first modified surface 210 and second changes Property surface 220 is respectively provided with hydrophilic and hydrophobicity, and above-mentioned surface modification mask plate is as shown in Figure 2.In order at subsequent step S3 In make hydrophilic inks or hydrophobicity ink enter transparent substrates more accurately by the hollow-out parts 10 of surface modification mask plate In hydrophilic or hydrophobicity subpixel area, it is preferable that in surface modification mask plate, the area≤correspondence of hollow-out parts 10 is hydrophilic Region or the area of hydrophobic region, it is further preferable that hollow-out parts 10 is consistent with the shape of corresponding hydrophilic region or hydrophobic region.
In a preferred embodiment, above-mentioned manufacture method also includes the mistake preparing above-mentioned surface modification mask plate Journey: step S01, immerses in the solution with hydrophobic material, so that hydrophobic material is fixed on the table of mask plate by mask plate Face;Step S02, will be fixed with mask plate and the solution separating of hydrophobic material, and mask plate will be dried process;Step S03, is arranged at the first light shield on the first surface of mask plate, and the first light shield is by multiple first occlusion parts and connects each first First transmittance section composition of occlusion part, the first occlusion part and hollow-out parts 10 one_to_one corresponding, and the area of each first occlusion part are more than The area of corresponding each hollow-out parts 10, carries out ultraviolet and ozone photodissociation oxidation by the first light shield to first surface, more right The second surface relative with first surface of mask plate carries out ultraviolet and ozone photodissociation oxidation, has hydrophilic second to be formed Modified surface 220, the remaining surface composition of mask plate has hydrophobic first modified surface 210;Or the second light shield is arranged On mask plate, the second light shield is by multiple second transmittance sections and connects the second occlusion part of each second transmittance section and forms, and Two transmittance sections and hollow-out parts 10 one_to_one corresponding, and the area of the most each second transmittance section is more than the face of each hollow-out parts 10 Long-pending, mask plate is carried out ultraviolet and ozone photodissociation oxidation, so that the surface of correspondence second transmittance section of mask plate is formed has parent First modified surface 210 of aqueous, the remaining surface composition of mask plate has hydrophobic second modified surface 220.
In the step of above-mentioned preparation surface modification mask plate, mask plate is typically made up of metal material, due to metal watch The oxide layer in face can be the most affine with water, so major part metal surface is all hydrophilic, the most hydrophilic metal material Material or the material of other hydrophilic ultraviolet aging resistances;Further, in order to make the surface modification mask plate being prepared from have preferably Hydrophobicity, preferably hydrophobic material are fluorine-containing silane coupler.By hydrophobic material being carried out ultraviolet and ozone photodissociation oxygen Change, expose hydrophilic metal surface to be removed by hydrophobic fluorine containing silane coupling agent, above-mentioned ultraviolet and ozone photodissociation oxidation Process conditions those skilled in the art can be set according to prior art.
After performing step S2, perform step S3: the first modified surface 210 is hydrophobic surface, makes hydrophobic amount Son point ink enters in hydrophobic region by hollow-out parts 10, or the first modified surface 210 is hydrophilic surface, makes hydrophilic amount Son point ink is entered in hydrophilic region by hollow-out parts 10.Spraying coating process or InkJet printing processes can be used so that quantum dot is black Water enters in hydrophilic region or hydrophobic region by hollow-out parts 10, the viscosity≤50cps of the most above-mentioned quantum dot ink, so that Quantum dot ink preferably disperses out of ink falling in subpixel area;Further, in order to ensure that shower nozzle can be effectively by quantum dot ink Water smoke melts, it is preferable that above-mentioned spraying coating process is ultrasonic spraying, and in order to improve the spraying effect of quantum dot ink, super The supersonic frequency that sound spraying uses is 45kHz~180kHz, the viscosity≤10cps of preferred quantum dots ink.
Above-mentioned hydrophilic inks includes hydrophilic quantum dot, and hydrophilic quantum dot is the amount that surface ligand contains hydrophilic group Sub-, preferably hydrophilic group is carboxyl, amino, hydroxyl or sulfydryl;Above-mentioned hydrophobicity ink includes hydrophobicity quantum dot, and hydrophobic Property quantum dot is the quantum dot that surface ligand contains hydrophobic group, and preferably hydrophobic group is alkane chain or ester group;In order to make electroluminescent light The luminescent device causing to combine can full-color show, the quantum dot in the most above-mentioned quantum dot ink is red quantum point and amount of green color Sub-point.
Above-mentioned hydrophilic and hydrophobicity quantum dot ink can also include that curable resin or monomer whose and solvent (or claim Make dispersant).Wherein, solvent can be selected from the mixture conduct that boiling point is long chain hydrocarbon, alcohol, ester and ether between 40~250 DEG C Organic solvent.Preferably, hydrocarbon is straight or branched alkane, and such as, hydrocarbon is C6-10 alkane.Above-mentioned organic solvent can be chlorobenzene, O-dichlorohenzene, oxolane, methyl phenyl ethers anisole, morpholine, toluene, o-Dimethylbenzene, meta-xylene, xylol, alkylbenzene, Nitrobenzol, Normal hexane, hexamethylene, normal heptane, cycloheptane, dioxane, dichloromethane, chloroform, dichloroethanes, chloroform, chlorobenzene, 1,4 Dioxane, 1,2 dichloroethanes, 1,1,1-trichloroethane, 1,1,2,2-sym-tetrachloroethane, naphthane, naphthalane, N, N-diformazan Base Methanamide, DMAC N,N' dimethyl acetamide, dimethyl sulfoxide chloroform, oxolane, dichloromethane, toluene, normal hexane, methanol, Ethanol, propanol, butanol, acetone, dioxane, dimethylformamide and dimethyl sulfoxide.Wherein, curable resin is selected from epoxy Resin, acrylic resin, organic siliconresin, or the monomer crosslinked formation curable resin of correspondence.Above-mentioned hydrophilic and hydrophobic Property quantum dot ink can also include the cross-linking agent of band double bond, light curing agent or thermal curing agents etc..
After performing step S3, perform step S4: by the quantum dot ink dried in hydrophilic region or hydrophobic region.Right Process conditions those skilled in the art of above-mentioned quantum dot ink dried can be set according to prior art.Preferred in one Embodiment in, manufacture method also includes the process being at least repeated once step S2 to S4, in each repetitive process, is used The hollow-out parts correspondence hydrophilic region of surface modification mask plate or hydrophobic region, the glow color of the quantum dot ink used is also Different.It is preferably carried out in mode above-mentioned, by making each subpixel area is arranged the quantum dot ink of different glow color And be dried, the glow color final to adjust electroluminescent device;Further, by arranging in different subpixel area respectively Red quantum point and green quantum dot, under the irradiation of Blue backlight, this quantum dot film can realize red and green photic Light, thus realize the full-color display of RGB.
According to further aspect of the application, additionally providing a kind of quantum dot film, this quantum dot film is by above-mentioned making side Method is made.Owing to above-mentioned quantum dot film is by forming hydrophilic region and hydrophobic region on the first surface of transparent substrates Territory, and above-mentioned surface modification mask plate is arranged on the first surface of transparent substrates, make hollow-out parts correspondence hydrophilic region or Hydrophobic region arranges and is formed, thus different quantum dot inks can not only be made to enter into not by surface modification mask plate In same subpixel area, additionally it is possible to formed on the surface of transparent substrates by the hydrophilic region on transparent substrates and hydrophobic region Multiple subpixel area being separated, make hydrophilic quantum dot ink enter hydrophilic region, hydrophobic region as isolation structure, Or making hydrophobic quantum dot ink enter hydrophobic region, hydrophilic region, as isolation structure, effectively prevent quantum dot film The quantum dot colour mixture that middle different subpixel is interregional;Further, compare and pixel isolation structure is set on the transparent substrate and is formed Quantum dot film, above-mentioned quantum dot film can have lower cost of manufacture.
According to further aspect of the application, additionally providing a kind of display device, display device includes electroluminescent device And it is arranged at the above-mentioned quantum dot film of electroluminescent device light emission side.Owing to the quantum dot film in aforementioned display device part is to pass through The first surface of transparent substrates is formed hydrophilic region and hydrophobic region, and above-mentioned surface modification mask plate is arranged at On the first surface of photopolymer substrate, hollow-out parts correspondence hydrophilic region or hydrophobic region is made to arrange and be formed, thus by the amount of preventing The quantum dot colour mixture that in son point film, different pixels is interregional, is effectively improved the display device color essence with this quantum dot film The problem of parasexuality.
In order to prevent when electroluminescent device irradiates quantum dot film in quantum dot film the mixed light between adjacent subpixels region, Preferably, the transparent substrates in quantum dot film second modified surface relative with the first modified surface or with the second modified table In the Blue backlight light emission side of face laminating, black matrix" is set, when hydrophilic quantum dot ink enters in hydrophilic region, black Colour moment battle array is correspondingly arranged with hydrophobic region, and when hydrophobic quantum dot ink enters in hydrophobic region, black matrix" is with hydrophilic Region is correspondingly arranged.
The manufacture method of the quantum dot film that the present invention provides is further illustrated below in conjunction with embodiment.
Embodiment 1
The step of the manufacture method of the surface modification mask plate that the present embodiment provides includes:
Step S01, immerses mask plate in the solution with hydrophobic material, and above-mentioned hydrophobic material is 17 fluorine decyls Trimethoxy silane, so that hydrophobic material is fixed on the surface of mask plate;
Step S02, will be fixed with mask plate and the solution separating of hydrophobic material, and be dried by mask plate;
Step S03, is arranged at the first light shield on the first surface of the mask plate with 96 × 64 hollow-out parts, the first light Cover by 96 × 64 the first occlusion parts and connect the first transmittance section of each first occlusion part and form, the first occlusion part and hollow-out parts One_to_one corresponding, and the area of the most each first occlusion part is more than the area of each hollow-out parts, use UV lamp send 185nm and The ultraviolet light of 254nm wavelength also makes ultraviolet light that first surface to be carried out the ultraviolet and ozone photodissociation oxygen of 5min by the first light shield Change, then the second surface relative with first surface of mask plate is entered by the ultraviolet light using UV lamp to send 185nm with 254nm wavelength The ultraviolet and ozone photodissociation oxidation of row 5min, forms hydrophilic surface, the remaining surface of mask plate with the surface light shone Constituting hydrophobic surface, hydrophobic surface is around hollow-out parts.
Embodiment 2
The production method of the surface modification transparent substrates that the present embodiment provides is as follows:
Coupling agent and initiator are mixed in a solvent, forms processing substrate liquid, a side surface of transparent substrates is placed In processing substrate liquid, coupling agent bonding is made to be fixed on the surface of transparent substrates and form bonding surface, by former for the first reaction Material is arranged on bonding surface, hides the first reaction raw materials being positioned at first area, and is pointed to the first reaction of second area Raw material carries out ultra-vioket radiation, so that the first reaction raw materials and coupling agent carry out graft reaction under ultra-vioket radiation, thus is formed and dredges Aqua region, removes the first reaction raw materials of first area, arranges the second reaction raw materials on first area and the second masked areas, Hide the second reaction raw materials being positioned at the second masked areas, and the second reaction raw materials being pointed to first area carries out ultraviolet photograph Penetrate, so that the second reaction raw materials and coupling agent carry out graft reaction under ultra-vioket radiation, thus form hydrophilic region;
Wherein, transparent substrates is glass, and coupling agent is chlorine (dimethyl) vinyl silanes, and initiator is 4-dimethyl pyrazole Pyridine, the first reaction raw materials 1H, 1H, 2H, 2H-perfluor decyl mercaptan, the second reaction raw materials mercaptoethylmaine, hydrophobic second area pair Answer the microarray pattern of two group 96 × 64.
Embodiment 3
The manufacture method of the quantum dot film that the present embodiment provides, uses the surface modification mask plate in embodiment 1 and enforcement Surface modification transparent substrates in example 2, manufacture method comprises the following steps:
Step S1, is arranged at surface modification mask plate on first surface, and 96 × 64 hollow-out parts of surface modification are with thin 96 × 64 microarray patterns of the one of which of aqua region are corresponding;
Step S2, uses inkjet printing (model is Dimatix Materials Printer DMP-2831) technique to make to dredge The red quantum point ink of aqueous is entered in hydrophobic region by hollow-out parts;
Step S3, by the quantum dot ink dried in hydrophobic region,
Step S4, is arranged at surface modification mask plate on first surface, and 96 × 64 hollow-out parts of surface modification are with thin Another 96 × 64 microarray patterns of group of aqua region are corresponding;
Step S5, uses inkjet printing (model is Dimatix Materials Printer DMP-2831) technique to make to dredge The green quantum dot ink of aqueous is entered in hydrophobic region by hollow-out parts;
Step S3, by the quantum dot ink dried in hydrophobic region,
Wherein, the viscosity of red and green quantum dot ink is 15cps, and red quantum point material is CdSe/ZnS, green Color quanta point material is CdSe/CdS, and the hydrophobic ligand of surface both is all oleic acid.
Embodiment 4
The manufacture method that the present embodiment provides is with the difference of embodiment 3:
Redness and the viscosity of green quantum dot ink that inkjet printing uses are 5cps.
Embodiment 5
The manufacture method that the present embodiment provides is with the difference of embodiment 3:
Use ultrasonic spraying to make hydrophobic red quantum point ink and green quantum dot ink be entered by hollow-out parts to dredge In aqua region, the supersonic frequency in above-mentioned ultrasonic spraying coating process is 120kHz.
Embodiment 6
The manufacture method that the present embodiment provides is with the difference of embodiment 5:
Supersonic frequency in ultrasonic spraying coating process is 45kHz.
Comparative example 1
The step of the manufacture method of the quantum dot film that this comparative example provides includes:
Step S1, coats photoresist on the first surface of transparent substrates, is exposed the most successively and develops, to be formed Pixel isolation structure, pixel isolation structure has two groups of 96 × 64 mutually isolated subpixel area, and pixel isolation structure Exposed surface be hydrophilic surface, the adjacent wall isolating matrix in pixel isolation structure is vertical with substrate, adjacent sidewall Between isolation matrix be isolating bar, and the side surface away from substrate of isolating bar is plane;
Step S2, is arranged at the mask plate of surface modification on first surface, 96 × 64 hollow-out parts and of mask plate Group subpixel area is corresponding;
Step S3, uses InkJet printing processes to make hydrophobic red quantum point ink enter hydrophobic region by hollow-out parts In;
Step S4, by the red quantum point ink dried in hydrophobic region;
Step S5, the mask plate of surface modification is arranged on first surface, 96 × 64 hollow-out parts of mask plate and another Group subpixel area is corresponding;
Step S6, uses InkJet printing processes to make hydrophobic green quantum dot ink enter hydrophobic region by hollow-out parts In;
Step S7, by the green quantum dot ink dried in hydrophobic region,
Wherein, transparent substrates is glass, and the material forming above-mentioned exposed surface is polyimides, red quantum point material ink Water includes that CdSe/ZnS, green quanta point material include that CdSe/CdS, the viscosity of quanta point material ink are 15cps.
Comparative example 2
The manufacture method that this comparative example provides is with the difference of comparative example 1, by spin coating quantum dot red, green respectively Material, multiexposure, multiple exposure development obtains the quantum dot film that red green is alternate, concretely comprises the following steps:
Step S1, spin coating red quantum point material on the transparent substrates having pixel isolation structure, then red to being provided with The transparent substrates of color quanta point material carries out baking process, exposure-processed, development treatment and dried successively;
Step S2, spin coating green quanta point material on aforesaid substrate, then to being provided with the saturating of green quanta point material Photopolymer substrate carries out baking process, exposure-processed, development treatment and dried successively,
Wherein, step S1 and step S2 respectively obtain 96 × 64 red quantum lattice arrays and 96 × 64 green quantum dots Array.
After respectively the quantum dot film in above-described embodiment 3 to 6 and comparative example 1 to 2 being applied seal protection layer, it is arranged at indigo plant The light emission side of color electroluminescent device (BLED), electroluminescent device includes the blue led lamp of order stacking epoxy encapsulation Pearl and light diffusing sheet.Utilize integrating sphere that the photoluminescence spectra area of red and green quantum dot is integrated, obtain redness As follows with the photoluminescence efficiency of green quantum:
Embodiment is numbered The photic efficiency of red quantum point The green photic efficiency of quantum dot
Embodiment 3 41% 32%
Embodiment 4 46% 36%
Embodiment 5 45% 37%
Embodiment 6 43% 33%
Comparative example 1 44% 35%
Comparative example 2 42% 31%
From above-mentioned test result it can be seen that the red quantum point that obtains of embodiments of the present invention and green quantum dot film Photoluminescence efficiency and traditional handicraft suitable, the most also increase, but manufacturing cost be greatly lowered.
As can be seen from the above description, the above embodiments of the present invention achieve following technique effect:
1, when the surface modification mask plate utilizing the present invention prepares quantum dot film, it is possible to by make quantum dot ink with around First modified surface of hollow-out parts has identical hydrophilic and hydrophobic, makes quantum dot ink enter corresponding sub-picture by hollow-out parts Element will not stick on surface modification mask plate in region, thus effectively prevent owing to ink sticks to lead on mask plate The quantity of ink causing to enter in each subpixel area is uneven, and then efficiently avoid due to the quantity of ink in each subpixel area not The problem that the color accuracy all caused reduces;
2, multiple being separated is formed by the hydrophilic region on transparent substrates and hydrophobic region on the surface of transparent substrates Subpixel area, make hydrophilic quantum dot ink enter hydrophilic region, hydrophobic region is as isolation structure, or makes hydrophobic Quantum dot ink enters hydrophobic region, and hydrophilic region is as isolation structure, thus it is interregional to effectively prevent different subpixel Quantum dot ink blending, and then also efficiently solve quantum dot ink blending in different subpixel region and reduce color essence The problem of parasexuality;
3, comparing the manufacture method arranging pixel isolation structure on the transparent substrate, the above-mentioned manufacture method of the application is not only Subpixel area needed for can similarly making ink inject, also reduces the cost of manufacture of quantum dot film simultaneously.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for the skill of this area For art personnel, the present invention can have various modifications and variations.All within the spirit and principles in the present invention, that is made any repaiies Change, equivalent, improvement etc., should be included within the scope of the present invention.

Claims (10)

1. the manufacture method of a quantum dot film, it is characterised in that comprise the following steps:
Step S1, forms hydrophilic region and hydrophobic region on the first surface of transparent substrates;
Step S2, is arranged at the surface modification mask plate with multiple hollow-out parts on described first surface, and makes described surface The corresponding described hydrophilic region of hollow-out parts or described hydrophobic region in modified mask plate are arranged, and described surface modification mask plate has Modified surface, described modified surface includes the first modified surface and the second modified surface, and described first modified surface is around described Hollow-out parts, the described modified surface outside described first modified surface is described second modified surface, described first modified surface Different with described second modified surface and be respectively selected from the one in hydrophilic surface and hydrophobic surface, and described first is modified Surface is positioned at the side away from described first surface of described surface modification mask plate;
Step S3, described first modified surface is hydrophobic surface, makes hydrophobic quantum dot ink be entered by described hollow-out parts Enter in described hydrophobic region, or described first modified surface is hydrophilic surface, make hydrophilic quantum dot ink by described Hollow-out parts enters in described hydrophilic region;
Step S4, by the described quantum dot ink dried in described hydrophilic region or described hydrophobic region.
Manufacture method the most according to claim 1, it is characterised in that described step S1 includes:
Step S11, the surface configuration at described transparent substrates includes the raw material of the first reaction raw materials;
Step S12, hides described first reaction raw materials being positioned at first area, and is pointed to the first reaction raw materials of second area Carrying out ultraviolet light irradiation, described first reaction raw materials forms the second masked areas at described second area;
Step S13, removes described first reaction raw materials of described first area, on described first area and the second masked areas Second reaction raw materials is set;
Step S14, hides described second reaction raw materials being positioned at the second masked areas, and is pointed to the second reaction of first area Raw material carries out ultraviolet light irradiation, and described second reaction raw materials forms the first masked areas in described first area, then removes institute State described second reaction raw materials in the second masked areas,
Wherein, during described first reaction raw materials and the second reaction raw materials are respectively selected from hydrophilic reactant and hydrophobicity reactant One, and the hydrophilicity and hydrophobicity of the two is contrary, described first masked areas and described second masked areas are correspondingly formed described parent Aqua region and described hydrophobic region.
Manufacture method the most according to claim 1, it is characterised in that described manufacture method also includes that preparing described surface changes The process of property mask plate:
Step S01, immerses mask plate and has in the solution of hydrophobic material so that described hydrophobic material be fixed on described in cover The surface of template, the most described hydrophobic material is fluorine-containing silane coupler;
Step S02, will be fixed with the described mask plate of described hydrophobic material and described solution separating, and enters described mask plate Row dried;
Step S03, is arranged at the first light shield on the first surface of described mask plate, and described first light shield is blocked by multiple first Portion and connect the first transmittance section composition of each described first occlusion part, described first occlusion part and described hollow-out parts one a pair Should, and the area of each described first occlusion part is more than the area of corresponding each described hollow-out parts, by the first light shield to institute State first surface and carry out ultraviolet and ozone photodissociation oxidation, then the second surface relative with described first surface to described mask plate Carry out ultraviolet and ozone photodissociation oxidation, to be formed, there is hydrophilic second modified surface, the remaining surface structure of described mask plate Become there is hydrophobic described first modified surface;Or
Being arranged on described mask plate by second light shield, described second light shield is by multiple second transmittance sections and connects each described Second occlusion part composition of two transmittance sections, and described second transmittance section and described hollow-out parts one_to_one corresponding, and the most each The area of described second transmittance section, more than the area of each described hollow-out parts, carries out ultraviolet and ozone photodissociation oxygen to described mask plate Change, so that the surface of described second transmittance section of the correspondence of described mask plate is formed has hydrophilic first modified surface, described The remaining surface composition of mask plate has hydrophobic described second modified surface.
Manufacture method the most according to claim 1, it is characterised in that described step S3 uses spraying coating process or inkjet printing Technique is so that described quantum dot ink is entered in described hydrophilic region or described hydrophobic region by described hollow-out parts.
Manufacture method the most according to claim 4, it is characterised in that spraying coating process is ultrasonic spraying.
Manufacture method the most according to any one of claim 1 to 5, it is characterised in that formed on the first surface Multiple described hydrophilic regions and multiple described hydrophobic region, and each described hydrophilic region and each described hydrophobic region alternately arranged.
Manufacture method the most according to any one of claim 1 to 5, it is characterised in that
Described hydrophilic quantum dot ink includes hydrophilic quantum dot, and described hydrophilic quantum dot to be that surface ligand contains hydrophilic The quantum dot of group;
Described hydrophobic quantum dot ink includes hydrophobicity quantum dot, and described hydrophobicity quantum dot to be that surface ligand contains hydrophobic The quantum dot of group.
Manufacture method the most according to any one of claim 1 to 5, it is characterised in that the institute in described quantum dot ink Stating quantum dot is red quantum point and/or green quantum dot.
9. a quantum dot film, it is characterised in that described quantum dot film is by the making side according to any one of claim 1 to 8 Method is made.
10. a display device, described display device includes electroluminescent device and is arranged at described electroluminescent device and goes out The quantum dot film of light side, it is characterised in that described quantum dot film is the quantum dot film described in claim 9.
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PCT/CN2017/098811 WO2018036542A1 (en) 2016-08-26 2017-08-24 Manufacturing method for light emitting device, light emitting device, and hybrid light emitting device
US16/328,290 US10943781B2 (en) 2016-08-26 2017-08-24 Manufacturing method for light emitting device, light emitting device, and hybrid light emitting device
JP2019531517A JP2019525446A (en) 2016-08-26 2017-08-24 Light emitting device manufacturing method, light emitting device, and hybrid light emitting device
KR1020197007403A KR102387760B1 (en) 2016-08-26 2017-08-24 Manufacturing method of light emitting device, light emitting device and hybrid light emitting device
US17/012,086 US20230276685A9 (en) 2016-08-26 2020-09-04 Manufacturing method for light emitting device, light emitting device, and hybrid light emitting device

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107611021A (en) * 2017-08-10 2018-01-19 南方科技大学 Method for preparing high-precision patterned quantum dot light-emitting layer and application thereof
WO2018036542A1 (en) * 2016-08-26 2018-03-01 纳晶科技股份有限公司 Manufacturing method for light emitting device, light emitting device, and hybrid light emitting device
CN107745581A (en) * 2017-10-13 2018-03-02 纳晶科技股份有限公司 Drain component and its application method and application
CN108832011A (en) * 2018-06-05 2018-11-16 中山大学 Light emitting diode with quantum dots device and preparation method thereof, display panel
CN109239967A (en) * 2018-10-29 2019-01-18 京东方科技集团股份有限公司 Preparation method, color membrane substrates, display panel and the display device of quantum stippling film
WO2020043157A1 (en) * 2018-08-29 2020-03-05 Tcl集团股份有限公司 Quantum dot mesh dot light guide plate and preparation method therefor
CN110873921A (en) * 2018-08-29 2020-03-10 Tcl集团股份有限公司 Quantum dot mesh point light guide plate and preparation method thereof
CN110873920A (en) * 2018-08-29 2020-03-10 Tcl集团股份有限公司 Quantum dot mesh point light guide plate and preparation method thereof
WO2020173159A1 (en) * 2019-02-25 2020-09-03 京东方科技集团股份有限公司 Display substrate and preparation method therefor, and display apparatus
CN112631021A (en) * 2020-12-25 2021-04-09 舟山扑浪实业有限公司 Quantum dot display panel and self-assembly preparation method thereof
CN114744100A (en) * 2022-03-24 2022-07-12 厦门大学 Quantum dot pattern preparation method based on surface pretreatment
WO2023097540A1 (en) * 2021-12-01 2023-06-08 Boe Technology Group Co., Ltd. Method of fabricating quantum dots layer, substrate, and display apparatus

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1822904A (en) * 2003-07-18 2006-08-23 伊斯曼柯达公司 Method of pattern coating
CN1873913A (en) * 2000-12-22 2006-12-06 精工爱普生株式会社 Pattern forming method and device and semiconductor device, electric circuit, display element module and luminous element
CN101076211A (en) * 2006-05-19 2007-11-21 精工爱普生株式会社 Device, method for manufacturing device, and method for forming film
CN103151461A (en) * 2013-02-27 2013-06-12 京东方科技集团股份有限公司 Organic thin film transistor, preparation method and preparation device thereof
CN103241025A (en) * 2013-04-28 2013-08-14 京东方科技集团股份有限公司 Ink jet printing method of organic thin film
CN104617130A (en) * 2015-02-06 2015-05-13 京东方科技集团股份有限公司 OLED (Organic Light Emitting Diode) pixel unit, OLED display panel and device
US20150145924A1 (en) * 2013-11-28 2015-05-28 Akira Shimofuku Fabrication method of electromechanical transducer film, electromechanical transducer element, liquid ejection head, and inkjet recording apparatus
CN104733505A (en) * 2015-03-19 2015-06-24 京东方科技集团股份有限公司 Pixel defining layer of light emitting display and manufacturing method thereof
CN105529408A (en) * 2014-10-17 2016-04-27 三星显示有限公司 Mask assembly, apparatus for manufacturing display apparatus, and method of manufacturing display apparatus
CN105575997A (en) * 2014-10-30 2016-05-11 三星显示有限公司 Transparent display substrate and transparent display device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1873913A (en) * 2000-12-22 2006-12-06 精工爱普生株式会社 Pattern forming method and device and semiconductor device, electric circuit, display element module and luminous element
CN1822904A (en) * 2003-07-18 2006-08-23 伊斯曼柯达公司 Method of pattern coating
CN101076211A (en) * 2006-05-19 2007-11-21 精工爱普生株式会社 Device, method for manufacturing device, and method for forming film
CN103151461A (en) * 2013-02-27 2013-06-12 京东方科技集团股份有限公司 Organic thin film transistor, preparation method and preparation device thereof
CN103241025A (en) * 2013-04-28 2013-08-14 京东方科技集团股份有限公司 Ink jet printing method of organic thin film
US20150145924A1 (en) * 2013-11-28 2015-05-28 Akira Shimofuku Fabrication method of electromechanical transducer film, electromechanical transducer element, liquid ejection head, and inkjet recording apparatus
CN105529408A (en) * 2014-10-17 2016-04-27 三星显示有限公司 Mask assembly, apparatus for manufacturing display apparatus, and method of manufacturing display apparatus
CN105575997A (en) * 2014-10-30 2016-05-11 三星显示有限公司 Transparent display substrate and transparent display device
CN104617130A (en) * 2015-02-06 2015-05-13 京东方科技集团股份有限公司 OLED (Organic Light Emitting Diode) pixel unit, OLED display panel and device
CN104733505A (en) * 2015-03-19 2015-06-24 京东方科技集团股份有限公司 Pixel defining layer of light emitting display and manufacturing method thereof

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018036542A1 (en) * 2016-08-26 2018-03-01 纳晶科技股份有限公司 Manufacturing method for light emitting device, light emitting device, and hybrid light emitting device
US10943781B2 (en) 2016-08-26 2021-03-09 Najing Technology Corporation Limited Manufacturing method for light emitting device, light emitting device, and hybrid light emitting device
CN107611021A (en) * 2017-08-10 2018-01-19 南方科技大学 Method for preparing high-precision patterned quantum dot light-emitting layer and application thereof
CN107745581A (en) * 2017-10-13 2018-03-02 纳晶科技股份有限公司 Drain component and its application method and application
US11839886B2 (en) 2017-10-13 2023-12-12 Najing Technology Corporation Limited Liquid guiding component and using method and application thereof
CN108832011A (en) * 2018-06-05 2018-11-16 中山大学 Light emitting diode with quantum dots device and preparation method thereof, display panel
CN108832011B (en) * 2018-06-05 2020-01-10 中山大学 Quantum dot light-emitting diode device, preparation method thereof and display panel
CN110873920B (en) * 2018-08-29 2021-01-22 Tcl科技集团股份有限公司 Quantum dot mesh point light guide plate and preparation method thereof
WO2020043157A1 (en) * 2018-08-29 2020-03-05 Tcl集团股份有限公司 Quantum dot mesh dot light guide plate and preparation method therefor
CN110873921A (en) * 2018-08-29 2020-03-10 Tcl集团股份有限公司 Quantum dot mesh point light guide plate and preparation method thereof
CN110873920A (en) * 2018-08-29 2020-03-10 Tcl集团股份有限公司 Quantum dot mesh point light guide plate and preparation method thereof
CN110873921B (en) * 2018-08-29 2021-04-09 Tcl科技集团股份有限公司 Quantum dot mesh point light guide plate and preparation method thereof
CN109239967B (en) * 2018-10-29 2020-08-25 京东方科技集团股份有限公司 Preparation method of quantum dot color film, color film substrate, display panel and display device
WO2020088142A1 (en) * 2018-10-29 2020-05-07 京东方科技集团股份有限公司 Preparation method for quantum dot layer, quantum dot layer, quantum dot color film, color film substrate, display panel and display device
US20210222065A1 (en) * 2018-10-29 2021-07-22 Boe Technology Group Co., Ltd. Quantum Dot Layer and Manufacturing Method Thereof, Quantum Dot Color Filter, Color Filter Substrate, Display Panel, and Display Device
CN109239967A (en) * 2018-10-29 2019-01-18 京东方科技集团股份有限公司 Preparation method, color membrane substrates, display panel and the display device of quantum stippling film
US12012539B2 (en) * 2018-10-29 2024-06-18 Boe Technology Group Co., Ltd. Quantum dot layer and manufacturing method thereof, quantum dot color filter, color filter substrate, display panel, and display device
WO2020173159A1 (en) * 2019-02-25 2020-09-03 京东方科技集团股份有限公司 Display substrate and preparation method therefor, and display apparatus
US11387285B2 (en) 2019-02-25 2022-07-12 Boe Technology Group Co., Ltd. Display substrate and manufacturing method thereof including depositing different quantum dot solutions wettable to different material layers
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