CN106158681A - A kind of corrosion monitoring process for making Schottky diode air bridges - Google Patents
A kind of corrosion monitoring process for making Schottky diode air bridges Download PDFInfo
- Publication number
- CN106158681A CN106158681A CN201510171298.7A CN201510171298A CN106158681A CN 106158681 A CN106158681 A CN 106158681A CN 201510171298 A CN201510171298 A CN 201510171298A CN 106158681 A CN106158681 A CN 106158681A
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- China
- Prior art keywords
- corrosion
- monitoring
- air bridges
- schottky diode
- resistance
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Abstract
: a. provides Schottky diode to be corroded to the invention provides a kind of corrosion monitoring process for making Schottky diode air bridges, it is characterised in that including, wherein, described in treat that corrosion area is positioned at below air bridges；B. treating that the both sides of corrosion area form monitoring figure at described Schottky diode, the spacing of described monitoring figure is equal with the length of air bridges；C. treat corrosion area to corrode, corrosion process is measured resistance between monitoring figure in real time；D., when the resistance monitored between figure increases to threshold resistance, corrosion is stopped.The present invention can be accurately judged to the corrosion process of Schottky diode air bridges by the resistance between test monitoring figure, and because need not destroy backing material, improve the usable floor area of substrate, increasing the quantity of effective tube core.
Description
Technical field
The present invention relates to a kind of graphic monitoring method in semiconducter process, concrete, the present invention
Relate to a kind of nondestructive testable graphic monitoring method.
Technical background
Schottky diode is good low-noise device under room temperature, its Schottky barrier be by metal with
Semiconductor contact is formed, due to the difference of work function, at semiconductor surface to the space of internal extension electricity
He Qu forms surface potential barrier, forms nonlinear wind vibration under applying bias.Electric charge in quasiconductor
Transport process be mainly the majority carrier of thermal excitation, therefore, Schottky diode electric charge stores effect
Should be minimum with reverse recovery time, frequency characteristic is higher than PN junction device, VA characteristic curve forward is steep,
Series resistance is little, and reverse leakage current is little, is one of the most important device of terahertz wave band.
In prior art, in order to reduce parasitic capacitance further, Schottky diode needs exploitation with sky
Air bridge is as the air-bridge process of medium between lead-in wire, thus reduces wiring parasitic capacitance to greatest extent.
Its Ohmic electrode of Schottky diode connected by air bridges and Schottky electrode at grade,
It is planar structure device, has more preferably compared to traditional vertical whisker type structure Schottky diode
Reliability, more convenient using in installation process, be also easier to realize the collection with circuit structure
Become.
Owing to corrosion depth is relatively big (about reaching 3um), form crystal column surface microfluctuation, to technique essence
Degree brings certain impact, and sideetching is difficult to avoid that simultaneously, and device itself is small-sized in addition, and this makes
Obtain air bridges and can not ensure the formation of air bridges when making simply by increasing etching time, and want
Take effectively to monitor the means of sideetching degree when preparing air-bridge process.In suitable corrosion
In time, i.e. can reduce the impact on device itself by control corrosion rate pattern, again can be real on this basis
Air bridges link between existing electrode.This monitoring means are to use to accompany sheet or scanning electron microscope prison mostly
Control.
But above-mentioned monitoring means are respectively arranged with the deficiency of oneself: use and accompany sheet scheme, Xiao of terahertz wave band
Special based diode typically uses growth epitaxial structure in InP substrate to be made, and uses as formal sheet
The extension of structure accompanies sheet to add cost of manufacture undoubtedly.Use scanning electron microscope monitoring can avoid above-mentioned asking
Topic, but be because the monitoring whether air bridges empty and need to carry out end view, it is limited to the overwhelming majority
The scanning electron microscope depth of field and cavity size, need to cut out the sample that size is less from formal sheet, and this is just
Making scanning electron microscope monitoring means is that a kind of disruptive method has no small shadow to yield rate and subsequent technique
Ringing, and scanning electron microscope is a kind of test equipment costly, this adds undoubtedly and ensures technique
The requirement of ability.
For the deficiency in conventional monitoring means, the present invention proposes a kind of non-destructive and prepares Schottky
The monitoring scheme of diode air bridges.
Summary of the invention
For the problems referred to above, the present invention proposes a kind of corruption for making Schottky diode air bridges
Erosion monitoring method, can realize Schottky diode air under conditions of the most too much increasing etching time
The making of bridge, and can effective protection device construction, the most cost-effective.Concrete, the party
Method includes:
A., Schottky diode to be corroded is provided, wherein, described in treat that corrosion area is positioned under air bridges
Side；
B. treat that the both sides of corrosion area form monitoring figure, described monitoring figure at described Schottky diode
The spacing of shape is equal with the length of air bridges；
C. treat corrosion area to corrode, corrosion process is measured resistance between monitoring figure in real time；
D., when the resistance monitored between figure increases to threshold resistance, corrosion is stopped.
Wherein, between step b and c, also include step e: form the mask covering described air bridges,
The width of described mask is equal with air bridges bridge width.
Wherein, described mask is etching mask.
Wherein, the material of described etching mask is photoresist.
Wherein, described threshold resistance is more than monitoring the initial resistance between figure before corrosion.
Wherein, when the resistance monitored between figure reaches threshold resistance, treating below air bridges is corroded
Region is completely removed.
Wherein, the magnitude of described threshold resistance is 104Ω。
The present invention is by the resistance between test monitoring figure, and the size according to resistance can be accurately
Judge the corrosion process of Schottky diode air bridges, reduce technique without special equipment
Difficulty and the requirement to process equipment ability.And because need not destroy backing material, improve lining
The usable floor area at the end, adds the quantity of effective tube core；Meanwhile, because substrate entirety is not by broken
Bad, therefore can also use standard manufacturing process during subsequent technique.
Accompanying drawing explanation
The detailed description that non-limiting example is made made with reference to the following drawings by reading, this
The other features, objects and advantages of invention will become more apparent upon:
The embodiment that Fig. 1 provides for the present invention has the Schottky diode junction of air bridge structure
Structure schematic diagram；
For the corrosion monitoring of Schottky diode air bridges in the embodiment that Fig. 2 provides for the present invention
Resolution chart structural representation；
The monitoring when corroding Schottky diode air bridges in the embodiment that Fig. 3 provides for the present invention
Mask pattern schematic diagram on figure；
The monitoring pattern structural representation when corrosion starts in the embodiment that Fig. 4 provides for the present invention
Figure；
Monitoring pattern structural representation at the end of corrosion in the embodiment that Fig. 5 provides for the present invention
Figure；
In accompanying drawing, same or analogous reference represents same or analogous parts.
Detailed description of the invention
The invention provides a kind of corrosion monitoring process for making Schottky diode air bridges, energy
Effective minimizing monitoring cost under conditions of not affecting craft precision and not destroying device architecture.For making
The object, technical solutions and advantages of the present invention are clearer, below in conjunction with the accompanying drawing reality to the present invention
Execute example to be described in detail.
Embodiments of the invention are described below in detail, and the example of described embodiment is shown in the drawings, its
In the most same or similar label represent same or similar element or there is same or like merit
The element of energy.The embodiment described below with reference to accompanying drawing is exemplary, is only used for explaining this
Bright, and be not construed as limiting the claims.Additionally, the present invention can repeat in different examples
Reference number and/or letter.This repetition is for purposes of simplicity and clarity, and itself does not indicate institute
Relation between various embodiment being discussed and/or arranging.Additionally, the invention provides various specifically
Technique and the example of material, but those of ordinary skill in the art it can be appreciated that other techniques should
For property and/or the use of other materials.It should be noted that, parts illustrated in the accompanying drawings are not necessarily pressed
Ratio is drawn.Present invention omits the description to known assemblies and treatment technology and process so that avoid need not
Strategic point limits the present invention.
The Schottky of air bridge structure is provided in the embodiment provided for the present invention with reference to Fig. 1, Fig. 1
Diode structure schematic diagram.As it is shown in figure 1, substrate 101 generally GaAs or InP material, at lining
Schottky diode epitaxial structure layer is grown at the end 101.Figure shows and is connected by air bridges 104
The Schottky diode connect, the both sides semiconductor structure that Schottky diode air bridges is connected is identical,
Substrate is upwards followed successively by: the first matrix the 102, second matrix 105 and cap rock 106.Described first matrix
102 for being lightly doped semiconductor material layer, is used for forming Schottky contacts；Second matrix 105 is heavy doping
Semiconductor material layer, is used for forming Ohmic contact；Cap rock 106 is passivation insulating medium layer.By light
Carve, metallize, etch, the semiconducter process such as alloy can be respectively in the quasiconductor mechanism in left side
On produce Ohm contact electrode 103 and Schottky contact region 108, as it can be seen, Ohm contact electrode
103 around described Schottky contact region 108, by air bridges by Schottky contact region be positioned at air bridges
The Schottky electrode on right side is connected, and forms planer schottky diode.Schottky diode air bridges
Be by wet etching metal bridge below quasiconductor first, second matrix 102 and 105 make realize
's.Because the stop of air bridges metal, the corrosion condition of air bridges lower semiconductor epitaxial material cannot
Directly observed by microscope.Therefore, next combine accompanying drawing the formation of air bridges is retouched in detail
State.Processing step before etching air bridges is the ordinary skill in the art, does not repeats them here.
As shown in Figure 4, in one embodiment of the invention, it is provided that a Schottky to be corroded
Diode, including: the metal electricity of Semiconductor substrate 402, heavy doping epitaxial layer 403 and monitoring figure
Pole 401；Lightly doped epitaxial layer is sequentially formed on heavy doping epitaxial layer 403 between metal electrode 401
404 and insulating passivation layer 405.Wherein, the width between metal electrode 401 is the length of air bridges.
Wherein, the metal electrode of described monitoring figure is for testing the semiconductor structure below metal electrode
Between resistance, its shape is as shown in Figure 2.Wherein, 201 is the metal pressure point of monitoring pattern, it and
The structure of Schottky diode Ohmic electrode is identical and has together prepared.The shape of monitoring figure is permissible
For any geometry, such as circle, rectangle, triangle, polygon etc., it is preferred that for the ease of
Technique makes and utilizes probe to carry out DC I-V test, and that monitors figure is shaped as rectangle, dimension of picture
Not less than 50 × 50um.In Fig. 2, the spacing between monitoring pattern 202 and Schottky diode air
Bridge length is identical, and generally 15 arrive 25um.
It follows that as shown in Figure 4, square on described metal electrode 401 and insulating passivation layer 405
Become for etching the mask forming air bridges, it is preferred that described mask is etching mask, in this reality
Executing in example, the material of described mask is photoresist.The effect of mask is during etching to protect
It is positioned at the lightly doped epitaxial layer 404 below mask to be not etched, thus at Semiconductor substrate 402 and weight
Doped epitaxial layer 403 is removed and forms the air bridges connecting two discrete metal electrodes 401 afterwards.
The shape of mask is identical with described air bridges, optionally, and can be above described monitoring figure edge
Form mask.The front view of described mask is as shown in Figure 3.Wherein, the first shade 301 is for there being photoetching
The etching mask region of glue, the photoresist width shown in the second shade 302 is empty with Schottky diode
The bridge width of air bridge is identical, white space 303 is unglazed photoresist mask, and this is easy to probe and monitoring figure 202
Metallic region keeps good contact, carries out the resistance that DC I-V tests and calculates between monitoring pattern.
It should be noted that the Schottky diode in the present embodiment is monitoring devices, for large quantities of
Amount monitors etching progress rather than as functional when etching the Schottky diode of same specification framework
Device uses；Thus from the point of view of cost-effective, the Schottky diode in Fig. 4 is not formed
Ohmic electrode and Schottky electrode, but directly heavily doped after forming heavy doping epitaxial layer 403
Miscellaneous epitaxial layer 403 surface forms the metal electrode of monitoring figure, and is formed at backbone metal electrode surface
Mask so that this monitoring devices can be saved into while effectively monitoring etching progress as far as possible
This.Owing to not making Schottky electrode, thus the device in Fig. 4 will not shape after etching terminates
Become air bridge structure, but the structure below mask all can be etched, form cavity.
Corrode it follows that treat corrosion area, while corrosion is carried out, by monitoring figure
Resistance between semi-conducting material below monitoring figure is measured in real time.Between monitoring figure
Semiconductor structure the most also includes lightly doped epitaxial layer 404 and insulating passivation layer 405.Start just
During etching, being pressed on monitoring figure with probe and test resistance therebetween, electric current can be in heavy doping extension
Flowing through in layer 403 and lightly doped epitaxial layer 404 two-layer doped semiconductor epitaxial layer, therefore resistance value is very
Little.Under this explanation air bridges, clean needs of corrosion does not continues corrosion.Along with the carrying out of corrosion, monitoring
Semiconductor epitaxial material between figure gradually decreases, and the resistance between monitoring pattern is gradually increased.When
Corrosion is after after a while, as shown in Figure 5 except intrinsic between monitoring pattern metal electrode 501
Other epitaxial structure is not had again outside Semiconductor substrate 502.Now it is pressed on 501 test 501 with probe
Between resistance, electric current can only flow through in 502, and therefore resistance is the biggest.This illustrates air bridges
Under corrosion substantially clean.Corrode the resistance between a period of time monitoring pattern more no longer along with corrosion
The increase of time and when increasing, illustrate that Schottky diode air bridges etches.
The technical scheme that the present invention provides increases in the etching process preparing Schottky diode air bridges
One group of testable metal monitoring pattern, changes by the resistance between test monitoring figure
Judge the corrosion process of Schottky diode air bridges.Resistance between monitoring pattern is less,
General 100To 103During the order magnitude range of ohm, illustrate that air bridges corrosion not exclusively needs to continue to corrode；
Resistance between monitoring pattern is very big, typically 104During ohm level, illustrate that air bridges is corroded
Complete.Concretely, this test monitoring pattern pitch is equal with Schottky diode air bridges length, should
Monitoring pattern metal is identical with Schottky diode ohmic metal, and it is formed good with heavily doped semiconductor layer
Good Ohmic contact.When corroding Schottky diode air bridges with photoresist through light between monitoring pattern
Carve development and form etching mask layer, the width of the etching mask photoresist between monitoring pattern and Xiao
The width of special based diode air bridges is identical.During wet etching Schottky diode air bridges,
Along with the corrosion of anti-mask lower semiconductor epitaxial material, the resistance between monitoring pattern is gradually
Becoming big, when the semiconductor epitaxial material layer below mask all erodes, resistance commonly reaches
104Ohm.Because monitoring pattern spacing is corresponding with Schottky diode air bridges bridge length, monitoring pattern
Between etching mask width corresponding with Schottky diode air bridges bridge width, so monitoring pattern it
Between semi-conducting material and Schottky diode air bridges below semi-conducting material have basically identical
Corrosion rate.In corrosion process, by the resistance between test monitoring figure, according to resistance
Size can be accurately judged to the corrosion process of Schottky diode air bridges.
Therefore, the present invention, by the resistance between test monitoring figure, according to the size of resistance is
The corrosion process of Schottky diode air bridges can be accurately judged to, reduce without special equipment
Technology difficulty and the requirement to process equipment ability.And because need not destroy backing material, carry
The high usable floor area of substrate, adds the quantity of effective tube core；Meanwhile, because substrate entirety does not has
Destroyed, therefore can also be used standard manufacturing process during subsequent technique.
Although being described in detail about example embodiment and advantage thereof, it should be understood that without departing from this
In the case of bright spiritual and defined in the appended claims protection domain, these embodiments can be entered
Row various changes, substitutions and modifications.For other examples, those of ordinary skill in the art should hold
Readily understood while keeping in scope, the order of processing step can change.
Additionally, the range of application of the present invention be not limited to the specific embodiment described in description technique,
Mechanism, manufacture, material composition, means, method and step.From the disclosure, as
Those of ordinary skill in the art will readily appreciate that, for having existed or will develop at present later
Technique, mechanism, manufacture, material composition, means, method or the step gone out, wherein they perform with
The function that is substantially the same of corresponding embodiment that the present invention describes or the result that acquisition is substantially the same, according to
They can be applied by the present invention.Therefore, claims of the present invention be intended to by these technique,
Mechanism, manufacture, material composition, means, method or step are included in its protection domain.
Claims (8)
1. the corrosion monitoring process being used for making Schottky diode air bridges, it is characterised in that including:
A., Schottky diode to be corroded is provided, wherein, described in treat that corrosion area is positioned at below air bridges；
B. treat that the both sides of corrosion area form monitoring figure at described Schottky diode, described monitoring figure
Spacing is equal with the length of air bridges；
C. treat corrosion area to corrode, corrosion process is measured resistance between monitoring figure in real time；
D., when the resistance monitored between figure increases to threshold resistance, corrosion is stopped.
Corrosion monitoring process the most according to claim 1, it is characterised in that described monitoring figure is gold
Belong to electrode.
Corrosion monitoring process the most according to claim 1, it is characterised in that between step b and c,
Also include step e: form the mask covering described air bridges, the width of described mask and air bridges bridge width
Equal.
Corrosion monitoring process the most according to claim 2, it is characterised in that described mask is anticorrosive
Mask.
Corrosion monitoring process the most according to claim 2, it is characterised in that described etching mask
Material is photoresist.
Corrosion monitoring process the most according to claim 1, it is characterised in that described threshold resistance is more than
The initial resistance between figure is monitored before corrosion.
Corrosion monitoring process the most according to claim 1, it is characterised in that between monitoring figure
When resistance reaches threshold resistance, below air bridges, treat that corrosion area is completely removed.
Corrosion monitoring process the most according to claim 1, it is characterised in that the amount of described threshold resistance
Level is 104Ω。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510171298.7A CN106158681A (en) | 2015-04-10 | 2015-04-10 | A kind of corrosion monitoring process for making Schottky diode air bridges |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510171298.7A CN106158681A (en) | 2015-04-10 | 2015-04-10 | A kind of corrosion monitoring process for making Schottky diode air bridges |
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| CN106158681A true CN106158681A (en) | 2016-11-23 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950341A (en) * | 2019-03-28 | 2019-06-28 | 苏州协鑫纳米科技有限公司 | The method that Thinfilm solar cell assembly and detection Thinfilm solar cell assembly P2 carve disconnected situation |
| CN110752166A (en) * | 2019-09-09 | 2020-02-04 | 福建省福联集成电路有限公司 | Air bridge monitoring structure and manufacturing method thereof |
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| JPH1167719A (en) * | 1997-08-20 | 1999-03-09 | Sony Corp | Etching and etching apparatus in semiconductor manufacture |
| TW200616158A (en) * | 2004-11-11 | 2006-05-16 | Univ Nat Changhua Education | A method for real-time monitoring of the fabrication of magnetic memory units |
| CN1796127A (en) * | 2004-12-30 | 2006-07-05 | 明基电通股份有限公司 | Fluid jet device possessing sensor and menufacturing method |
| US20070034336A1 (en) * | 2002-06-11 | 2007-02-15 | Masakazu Hirata | Method of, and apparatus for, producing near field optical head |
| KR100759684B1 (en) * | 2006-04-17 | 2007-09-17 | 삼성에스디아이 주식회사 | Dry etching apparatus and etching method organic light emitting display device using the same |
| CN102800609A (en) * | 2012-09-11 | 2012-11-28 | 中国科学院微电子研究所 | Method for monitoring production of air bridge of schottky diode |
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2015
- 2015-04-10 CN CN201510171298.7A patent/CN106158681A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1167719A (en) * | 1997-08-20 | 1999-03-09 | Sony Corp | Etching and etching apparatus in semiconductor manufacture |
| US20070034336A1 (en) * | 2002-06-11 | 2007-02-15 | Masakazu Hirata | Method of, and apparatus for, producing near field optical head |
| TW200616158A (en) * | 2004-11-11 | 2006-05-16 | Univ Nat Changhua Education | A method for real-time monitoring of the fabrication of magnetic memory units |
| CN1796127A (en) * | 2004-12-30 | 2006-07-05 | 明基电通股份有限公司 | Fluid jet device possessing sensor and menufacturing method |
| KR100759684B1 (en) * | 2006-04-17 | 2007-09-17 | 삼성에스디아이 주식회사 | Dry etching apparatus and etching method organic light emitting display device using the same |
| CN102800609A (en) * | 2012-09-11 | 2012-11-28 | 中国科学院微电子研究所 | Method for monitoring production of air bridge of schottky diode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950341A (en) * | 2019-03-28 | 2019-06-28 | 苏州协鑫纳米科技有限公司 | The method that Thinfilm solar cell assembly and detection Thinfilm solar cell assembly P2 carve disconnected situation |
| CN110752166A (en) * | 2019-09-09 | 2020-02-04 | 福建省福联集成电路有限公司 | Air bridge monitoring structure and manufacturing method thereof |
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Application publication date: 20161123 |