CN106155172A - A kind of have the start-up circuit without overshoot characteristics and band-gap reference circuit - Google Patents
A kind of have the start-up circuit without overshoot characteristics and band-gap reference circuit Download PDFInfo
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- CN106155172A CN106155172A CN201510146925.1A CN201510146925A CN106155172A CN 106155172 A CN106155172 A CN 106155172A CN 201510146925 A CN201510146925 A CN 201510146925A CN 106155172 A CN106155172 A CN 106155172A
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Abstract
The invention discloses and a kind of have the start-up circuit without overshoot characteristics and band-gap reference circuit, the source electrode of its metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 is connected with supply voltage VDD；The grid of metal-oxide-semiconductor M1 is connected with the grid of metal-oxide-semiconductor M2, forms the first current mirror unit；The grid of metal-oxide-semiconductor M1 is connected with the grid of metal-oxide-semiconductor M3, forms the second current mirror unit；The drain electrode of metal-oxide-semiconductor M1 is connected with the grid of metal-oxide-semiconductor M1 and the drain electrode of metal-oxide-semiconductor M4 respectively, and the grid of metal-oxide-semiconductor M4 is connected with feedback port o1；The drain electrode of metal-oxide-semiconductor M2 is connected with the first starting current output port o2；The drain electrode of metal-oxide-semiconductor M3 is connected with the second starting current output port o3.The present invention makes controlled circuit deviate zero current starting state by two-way starting current, and two-way starting current is gradually increased, and transition will not occur so that controlled circuit will not occur punching, startup stage stability higher.
Description
Technical field
The present invention relates to electronic circuit field, particularly relate to a kind of there is the start-up circuit without overshoot characteristics and band-gap reference circuit.
Background technology
In integrated circuit design, self-bias voltage source, self-bias current source and voltage-reference are typically necessary and set up start-up circuit so that it is can normally start.Band-gap reference (bandgap)
Circuit module provides the reference voltage with zero-temperature coefficient for other circuit modules.When bandgap engineered benchmark (bandgap) circuit, in order to avoid it is in undesirable zero current condition, need to increase start-up circuit module.
Current start-up circuit is typically all by the way of providing and starting voltage, forces controlled circuit to deviate zero current condition, but this Starting mode is unstable, and controlled circuit may can return to zero current condition and can not normally start again.And, generally startup stage can make controlled circuit occurred punching phenomenon, make controlled circuit moment deviate zero current condition, cause controlled circuit at the work extremely unstable of initial start stage.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, there is provided a kind of and there is the start-up circuit without overshoot characteristics and band-gap reference circuit, controlled circuit is made to deviate zero current starting state by two-way starting current, and two-way starting current is gradually increased, transition will not occur, make controlled circuit that punching will not occur, startup stage stability higher.
It is an object of the invention to be achieved through the following technical solutions: a kind of have the start-up circuit without overshoot characteristics, and it includes metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, metal-oxide-semiconductor M4, resistance Rn and resistance Rp.
The source electrode of metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 is connected with supply voltage VDD.
The grid of metal-oxide-semiconductor M1 is connected with the grid of metal-oxide-semiconductor M2, forms the first current mirror unit.
The grid of metal-oxide-semiconductor M1 is connected with the grid of metal-oxide-semiconductor M3, forms the second current mirror unit.
The drain electrode of metal-oxide-semiconductor M1 is connected with the grid of metal-oxide-semiconductor M1 and the drain electrode of metal-oxide-semiconductor M4 respectively, and the grid of metal-oxide-semiconductor M4 is connected with feedback port o1.
The drain electrode of metal-oxide-semiconductor M2 by resistance Rn with dock, the drain electrode of metal-oxide-semiconductor M2 is also connected with the first starting current output port o2.
The drain electrode of metal-oxide-semiconductor M3 by resistance Rp with dock, the drain electrode of metal-oxide-semiconductor M3 is also connected with the second starting current output port o3.
It also includes resistance R1, metal-oxide-semiconductor M8 and metal-oxide-semiconductor M9.
The grid of metal-oxide-semiconductor M8 is connected with the grid of metal-oxide-semiconductor M9, form the 3rd current mirror unit, the source electrode of metal-oxide-semiconductor M8 with dock, the drain electrode of metal-oxide-semiconductor M8 is connected with supply voltage VDD by resistance R1.
The source electrode of metal-oxide-semiconductor M9 with dock, the drain electrode of metal-oxide-semiconductor M9 is connected with the drain electrode of metal-oxide-semiconductor M1.
A kind of have the band-gap reference circuit without overshoot characteristics, and it includes start-up circuit as above, band gap reference core circuit and reference voltage output circuit.
Described band gap reference core circuit includes operational amplifier OP1, metal-oxide-semiconductor M5, metal-oxide-semiconductor M6, audion Q1, audion Q2, resistance Rd, resistance Rn and resistance Rp.
The inverting input of operational amplifier OP1 emitter stage with the drain electrode of metal-oxide-semiconductor M5, the first starting current outfan o2 and triode Q1 of start-up circuit respectively is connected, the inverting input of operational amplifier OP1 also by resistance Rn with dock；
The in-phase input end of operational amplifier OP1 is connected with the drain electrode of metal-oxide-semiconductor M6 and the second starting current outfan o3 of start-up circuit respectively, the in-phase input end of operational amplifier OP1 is connected also by the emitter stage of resistance Rd with audion Q2, the in-phase input end of operational amplifier OP1 also by resistance Rp with dock.
The grid of metal-oxide-semiconductor M5 is connected with the grid of metal-oxide-semiconductor M6, and its intersection point is Y point, constitutes the 4th current mirror unit, and the source electrode of metal-oxide-semiconductor M5 and the source electrode of metal-oxide-semiconductor M6 are all connected with supply voltage VDD, and the outfan of operational amplifier OP1 is connected with Y point and feedback port o1；The base stage of the colelctor electrode of audion Q1, the base stage of audion Q1, the colelctor electrode of audion Q2 and audion Q2 all with dock.
Described reference voltage generating circuit includes metal-oxide-semiconductor M7 and resistance Rref.
The source electrode of metal-oxide-semiconductor M7 is connected with supply voltage VDD, and the drain electrode of metal-oxide-semiconductor M7 is connected with reference voltage output end, the drain electrode of metal-oxide-semiconductor M7 also by resistance Rref with dock, the grid of metal-oxide-semiconductor M7 withY PointConnect.
The breadth length ratio of described metal-oxide-semiconductor M4 is identical with the breadth length ratio of metal-oxide-semiconductor M5.
The emitter area of described audion Q2 is N times of the emitter area of audion Q1.
Described resistance Rn is identical with the resistance of resistance Rp.
The invention has the beneficial effects as follows:
1) start-up circuit proposed by the invention can make controlled circuit deviate zero current starting state by two-way starting current, and two-way starting current is gradually increased, and transition will not occur so that controlled circuit will not occur punching.Being received the feedback signal of controlled circuit by feedback port o1, and gradually raise the voltage of X point so that electric current In and electric current Ip is gradually decrease to null value, start-up circuit stops output starting current, and controlled circuit enters normal mode of operation.
2) band-gap reference circuit proposed by the invention can make band-gap reference circuit deviate zero current starting state by two-way starting current, and electric current In and electric current Ip is gradually increased, and transition will not occur so that band-gap reference electric current will not occur punching.Being received the feedback signal of band-gap reference circuit by feedback port o1, and gradually raise the voltage of X point so that electric current In and electric current Ip is gradually decrease to null value, start-up circuit stops output starting current, and band-gap reference circuit enters normal mode of operation.
Accompanying drawing explanation
Fig. 1 is without crossing the circuit theory diagrams rushing start-up circuit in the present invention；
Fig. 2 is without crossing the circuit theory diagrams rushing band gap start-up circuit in the present invention；
Fig. 3 is without crossing the simulated effect figure rushing band gap start-up circuit in the present invention.
Detailed description of the invention
Technical scheme is described in further detail below in conjunction with the accompanying drawings, but protection scope of the present invention is not limited to the following stated.
(1) start-up circuit is rushed without crossing
Having the start-up circuit without overshoot characteristics as it is shown in figure 1, a kind of, it includes metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, metal-oxide-semiconductor M4, resistance Rn and resistance Rp.
The source electrode of metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 is connected with supply voltage VDD.
The grid of metal-oxide-semiconductor M1 is connected with the grid of metal-oxide-semiconductor M2, forms the first current mirror unit.
The grid of metal-oxide-semiconductor M1 is connected with the grid of metal-oxide-semiconductor M3, forms the second current mirror unit.
The drain electrode of metal-oxide-semiconductor M1 is connected with the grid of metal-oxide-semiconductor M1 and the drain electrode of metal-oxide-semiconductor M4 respectively, and the grid of metal-oxide-semiconductor M4 is connected with feedback port o1.
The drain electrode of metal-oxide-semiconductor M2 by resistance Rn with dock, the drain electrode of metal-oxide-semiconductor M2 is also connected with the first starting current output port o2.
The drain electrode of metal-oxide-semiconductor M3 by resistance Rp with dock, the drain electrode of metal-oxide-semiconductor M3 is also connected with the second starting current output port o3.
It also includes resistance R1, metal-oxide-semiconductor M8 and metal-oxide-semiconductor M9.
The grid of metal-oxide-semiconductor M8 is connected with the grid of metal-oxide-semiconductor M9, form the 3rd current mirror unit, the source electrode of metal-oxide-semiconductor M8 with dock, the drain electrode of metal-oxide-semiconductor M8 is connected with supply voltage VDD by resistance R1.
The source electrode of metal-oxide-semiconductor M9 with dock, the drain electrode of metal-oxide-semiconductor M9 is connected with the drain electrode of metal-oxide-semiconductor M1.
After start-up circuit powers on, first current mirror unit is started working, metal-oxide-semiconductor M2 exports electric current In to controlled circuit by the first starting current output port o2, second current mirror unit is started working, metal-oxide-semiconductor M3 by second starting current output port o3 output electric current Ip to controlled circuit, wherein, due to metal-oxide-semiconductor M2 and metal-oxide-semiconductor M3 breadth length ratio be worth different, the breadth length ratio value of the metal-oxide-semiconductor M2 breadth length ratio value more than metal-oxide-semiconductor M3, so the value that the value of electric current In is more than electric current Ip.
The present invention can make controlled circuit deviate zero current starting state by two-way starting current, and electric current In and electric current Ip is gradually increased, and transition will not occur so that controlled circuit will not occur punching.Metal-oxide-semiconductor M4 is connected with controlled circuit by feedback port o1, the electric current flowing through metal-oxide-semiconductor M4 is gradually increased, and gradually raise the voltage of X point, and the electric current of metal-oxide-semiconductor M9 is constant, along with band-gap circuit tends to normally working, the electric current of metal-oxide-semiconductor M1 reduces, the image current of metal-oxide-semiconductor M2 and metal-oxide-semiconductor M3 also reduces, electric current In and electric current Ip is gradually decrease to null value, and start-up circuit stops output starting current, and controlled circuit enters normal mode of operation.
(2) band-gap reference circuit is rushed without crossing
Having the band-gap reference circuit without overshoot characteristics as in figure 2 it is shown, a kind of, it includes start-up circuit as above, band gap reference core circuit and reference voltage output circuit.
Described band gap reference core circuit includes operational amplifier OP1, metal-oxide-semiconductor M5, metal-oxide-semiconductor M6, audion Q1, audion Q2, resistance Rd, resistance Rn and resistance Rp.
The inverting input of operational amplifier OP1 emitter stage with the drain electrode of metal-oxide-semiconductor M5, the first starting current outfan o2 and triode Q1 of start-up circuit respectively is connected, the inverting input of operational amplifier OP1 also by resistance Rn with dock；
The in-phase input end of operational amplifier OP1 is connected with the drain electrode of metal-oxide-semiconductor M6 and the second starting current outfan o3 of start-up circuit respectively, the in-phase input end of operational amplifier OP1 is connected also by the emitter stage of resistance Rd with audion Q2, the in-phase input end of operational amplifier OP1 also by resistance Rp with dock.
The grid of metal-oxide-semiconductor M5 is connected with the grid of metal-oxide-semiconductor M6, and its intersection point is Y point, constitutes the 4th current mirror unit, and the source electrode of metal-oxide-semiconductor M5 and the source electrode of metal-oxide-semiconductor M6 are all connected with supply voltage VDD, and the outfan of operational amplifier OP1 is connected with Y point and feedback port o1；The base stage of the colelctor electrode of audion Q1, the base stage of audion Q1, the colelctor electrode of audion Q2 and audion Q2 all with dock.
Described reference voltage generating circuit includes metal-oxide-semiconductor M7 and resistance Rref.
The source electrode of metal-oxide-semiconductor M7 is connected with supply voltage VDD, and the drain electrode of metal-oxide-semiconductor M7 is connected with reference voltage output end, the drain electrode of metal-oxide-semiconductor M7 also by resistance Rref with dock, the grid of metal-oxide-semiconductor M7 is connected with Y point.
The breadth length ratio of described metal-oxide-semiconductor M4 is identical with the breadth length ratio of metal-oxide-semiconductor M5, i.e. (W/L)M4=(W/L)M5, W/L is the breadth length ratio of the conducting channel of metal-oxide-semiconductor.
The emitter area of described audion Q2 is N times of the emitter area of audion Q1, i.e. EmitterareaQ2=N×EmitterareaQ1。
Described resistance Rn is identical with the resistance of resistance Rp.
As it is shown on figure 3, Fig. 3 is to rush the simulated effect figure of band gap start-up circuit without crossing, wherein, first curve table be startup stage the in-phase input end voltage Vfp of operational amplifier OP1 and the state diagram of its anti-phase input terminal voltage Vfn；Second curve table be startup stage Y point and the state diagram of X point；3rd curve table be startup stage band-gap reference circuit output voltage Vref state diagram；4th curve table be startup stage start-up circuit the first starting current output port o2 output electric current In and the second starting current output port o3 output electric current Ip state diagram.As shown in three curve tables, band-gap reference circuit output voltage Vref did not had punching.
After start-up circuit powers on, first current mirror unit is started working, metal-oxide-semiconductor M2 is by the inverting input of the first starting current output port o2 output electric current In to operational amplifier OP1, second current mirror unit is started working, metal-oxide-semiconductor M3 is by the in-phase input end of the second starting current output port o3 output electric current Ip to operational amplifier OP1, wherein, the value of the electric current In value more than electric current Ip, the present invention can make band-gap reference circuit deviate zero current starting state by two-way starting current, and electric current In and electric current Ip is gradually increased, transition will not occur, make band-gap reference electric current that punching will not occur.Metal-oxide-semiconductor M4 is connected with band-gap reference circuit by feedback port o1, and gradually raises the voltage of X point so that electric current In and electric current Ip is gradually decrease to null value, and start-up circuit stops output starting current, and band-gap reference circuit enters normal mode of operation.
Claims (6)
1. one kind has the start-up circuit without overshoot characteristics, it is characterised in that: it includes metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4；
The source electrode of metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4 is connected with supply voltage VDD；
The grid of metal-oxide-semiconductor M1 is connected with the grid of metal-oxide-semiconductor M2, forms the first current mirror unit；
The grid of metal-oxide-semiconductor M1 is connected with the grid of metal-oxide-semiconductor M3, forms the second current mirror unit；
The drain electrode of metal-oxide-semiconductor M1 is connected with the grid of metal-oxide-semiconductor M1 and the drain electrode of metal-oxide-semiconductor M4 respectively, and the grid of metal-oxide-semiconductor M4 is connected with feedback port o1；
The drain electrode of metal-oxide-semiconductor M2 is connected with the first starting current output port o2；The drain electrode of metal-oxide-semiconductor M3 is connected with the second starting current output port o3.
The most according to claim 1 a kind of have the start-up circuit without overshoot characteristics, it is characterised in that: it also includes resistance R1, metal-oxide-semiconductor M8 and metal-oxide-semiconductor M9；
The grid of metal-oxide-semiconductor M8 is connected with the grid of metal-oxide-semiconductor M9, form the 3rd current mirror unit, the source electrode of metal-oxide-semiconductor M8 with dock, the drain electrode of metal-oxide-semiconductor M8 is connected with supply voltage VDD by resistance R1；
The source electrode of metal-oxide-semiconductor M9 with dock, the drain electrode of metal-oxide-semiconductor M9 is connected with the drain electrode of metal-oxide-semiconductor M1.
3. one kind has the band-gap reference circuit without overshoot characteristics, it is characterised in that: it includes the start-up circuit as described in claims 1 to 3 any one, band gap reference core circuit and reference voltage output circuit；
Described band gap reference core circuit includes operational amplifier OP1, metal-oxide-semiconductor M5, metal-oxide-semiconductor M6, audion Q1, audion Q2, resistance Rd, resistance Rn and resistance Rp；
The inverting input of operational amplifier OP1 emitter stage with the drain electrode of metal-oxide-semiconductor M5, the first starting current outfan o2 and triode Q1 of start-up circuit respectively is connected, the inverting input of operational amplifier OP1 also by resistance Rn with dock；
The in-phase input end of operational amplifier OP1 is connected with the drain electrode of metal-oxide-semiconductor M6 and the second starting current outfan o3 of start-up circuit respectively, the in-phase input end of operational amplifier OP1 is connected also by the emitter stage of resistance Rd with audion Q2, the in-phase input end of operational amplifier OP1 also by resistance Rp with dock；
The grid of metal-oxide-semiconductor M5 is connected with the grid of metal-oxide-semiconductor M6, and its intersection point is Y point, constitutes the 4th current mirror unit, and the source electrode of metal-oxide-semiconductor M5 and the source electrode of metal-oxide-semiconductor M6 are all connected with supply voltage VDD, and the outfan of operational amplifier OP1 is connected with Y point and feedback port o1；The base stage of the colelctor electrode of audion Q1, the base stage of audion Q1, the colelctor electrode of audion Q2 and audion Q2 all with dock；
Described reference voltage generating circuit includes metal-oxide-semiconductor M7 and resistance Rref；
The source electrode of metal-oxide-semiconductor M7 is connected with supply voltage VDD, and the drain electrode of metal-oxide-semiconductor M7 is connected with reference voltage output end, the drain electrode of metal-oxide-semiconductor M7 also by resistance Rref with dock, the grid of metal-oxide-semiconductor M7 is connected with Y point.
The most according to claim 1 a kind of have the band-gap reference circuit without overshoot characteristics, it is characterised in that: the breadth length ratio of described metal-oxide-semiconductor M4 is identical with the breadth length ratio of metal-oxide-semiconductor M5.
The most according to claim 1 a kind of have the band-gap reference circuit without overshoot characteristics, it is characterised in that: the emitter area of described audion Q2 is N times of the emitter area of audion Q1.
The most according to claim 1 a kind of have the band-gap reference circuit without overshoot characteristics, it is characterised in that: described resistance Rn is identical with the resistance of resistance Rp.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510146925.1A CN106155172A (en) | 2015-03-31 | 2015-03-31 | A kind of have the start-up circuit without overshoot characteristics and band-gap reference circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510146925.1A CN106155172A (en) | 2015-03-31 | 2015-03-31 | A kind of have the start-up circuit without overshoot characteristics and band-gap reference circuit |
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| CN106155172A true CN106155172A (en) | 2016-11-23 |
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| CN201510146925.1A Pending CN106155172A (en) | 2015-03-31 | 2015-03-31 | A kind of have the start-up circuit without overshoot characteristics and band-gap reference circuit |
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Cited By (6)
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| CN108646842A (en) * | 2018-07-10 | 2018-10-12 | 成都信息工程大学 | It is a kind of suitable for band gap reference without overshoot soft starting circuit |
| CN108879627A (en) * | 2017-05-16 | 2018-11-23 | 大陆汽车有限公司 | Electronic module and motor vehicles and the method that input current is limited during connection |
| CN109062306A (en) * | 2018-08-28 | 2018-12-21 | 上海华虹宏力半导体制造有限公司 | Threshold reference current generating circuit |
| CN109144165A (en) * | 2017-06-19 | 2019-01-04 | 深圳市威益德科技有限公司 | A reference source and its integrated circuit |
| CN111208859A (en) * | 2020-02-26 | 2020-05-29 | 上海华虹宏力半导体制造有限公司 | Band-gap reference source circuit with starting circuit |
| CN113985957A (en) * | 2021-12-27 | 2022-01-28 | 唯捷创芯(天津)电子技术股份有限公司 | Overshoot-free quick-start band gap reference circuit, chip and electronic equipment |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108879627A (en) * | 2017-05-16 | 2018-11-23 | 大陆汽车有限公司 | Electronic module and motor vehicles and the method that input current is limited during connection |
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| CN111208859A (en) * | 2020-02-26 | 2020-05-29 | 上海华虹宏力半导体制造有限公司 | Band-gap reference source circuit with starting circuit |
| CN113985957A (en) * | 2021-12-27 | 2022-01-28 | 唯捷创芯(天津)电子技术股份有限公司 | Overshoot-free quick-start band gap reference circuit, chip and electronic equipment |
| WO2023125250A3 (en) * | 2021-12-27 | 2023-09-21 | 唯捷创芯(天津)电子技术股份有限公司 | Overshoot-free fast start-up bandgap reference circuit, chip, and electronic device |
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