CN106125163A - High sensitivity micro-nano huge pressure drag rain sensor and preparation method thereof, measurement structure - Google Patents
High sensitivity micro-nano huge pressure drag rain sensor and preparation method thereof, measurement structure Download PDFInfo
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- CN106125163A CN106125163A CN201610408475.3A CN201610408475A CN106125163A CN 106125163 A CN106125163 A CN 106125163A CN 201610408475 A CN201610408475 A CN 201610408475A CN 106125163 A CN106125163 A CN 106125163A
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- G01W1/14—Rainfall or precipitation gauges
Abstract
Open a kind of high sensitivity micro-nano huge pressure drag rain sensor of the present invention and preparation method thereof, measurement structure, sensor include sensor array, sensor array element include the sensing unit of multiple sial hetero-junctions, current electrode to, signal detection extraction electrode to, with reference to extraction electrode pair；Each sensing unit includes the presser sensor structure of two sial hetero-junctions, silicon bottom, insulating silicon oxide layer and silicon top layer；Two structure sial hetero-junctions consistent with characteristic are set in parallel in sensor two ends, and sial hetero-junctions sidepiece arranges exciting electrode and detecting electrode.The present invention is in use, cause sensor chip to form mechanical stress by rainfall pressure and make the contact berrier size of change sial hetero-junctions, realize huge piezoresistive effect；Aluminum hetero-junctions C-V characteristic change as reference section is not to be caused by stress, can get rid of the impact of temperature as the reference circuit of difference.The present invention measures highly sensitive, accurately, it is adaptable to high-precision rainfall measurement occasion.
Description
Technical field
The present invention relates to micro-nano electronic mechanical system (MEMS/NEMS) sensor design technical field, particularly a kind of high
Sensitivity micro-nano huge pressure rain sensor and preparation method thereof, measurement structure.
Background technology
Meteorological have an important effect to national security, national economy and people life property safety, and the pressure of air
Being the most basic parameter of meteorological detection, therefore, the research of baroceptor is for promoting that weather service development has important work
With.Due to developing rapidly of microelectronics and micromachining technology, sensor technology have also been obtained the most progressive.Through tens
The development in year, some Successful utilization of semiconductor pressure sensor is in meteorologic survey field, as baroceptor and humidity pass
Sensor etc..But in terms of rainfall measurement, major part system uses the rainfall biography of traditional tipping bucket type and hydrocone type at present
Sensor.
The rainfall ability of the most traditional tipping bucket type and siphon rainfall sensor detection trace is weak, and by wind-force
Impact is relatively big, and the job stability in extreme weather conditions declines, and can not meet the requirement of present meteorological observation.
Piezoresistive pressure sensor includes traditional silicon piezoresistance type and the huge piezoresistive transducer of silicon nanowires, and its principle is all
Sensor stress film generation elastic deformation under pressure, by the change perception of varistor, and and then obtains output friendship
Processed by back end signal modulate circuit, the measurement to pressure can be realized by carrying out demarcating to output voltage and force value.By
Also corresponding stress can be produced, it is possible to be applied on rainfall measurement by piezoresistive silicon sensor when raindrop fall.
But current silicon piezoresistance type pressure sensor there is also following problem when applying to rainfall measurement: (1) is single
The limited area of pressure transducer, it is impossible to reflect the change of rainfall reliably.(2) tradition silicon varistor by doping process
The coefficient of strain less, about about 100, tradition is mixed the piezoresistive pressure sensor of technique and can not have been met trace and measure
Amount the requirement of sensitivity technique.(3) the huge piezoresistive transducer of silicon nanowires has the highest sensitivity, will but extremely large
The manufacturing process asked limits its extensive application.(4) sensor itself can not differentiate the stress difference of wind-force and rainfall,
Difficulty is brought to measurement.(5) meteorologic survey is the most all in the occasion that temperature Change is the biggest, affects piezoresistive silicon sensor
Performance.
Summary of the invention
The technical problem to be solved in the present invention is: based on MEMS technology design high sensitivity micro-nano huge pressure drag rainfall sensing
Device, effectively to catch the raindrop of different directions and size, promotes the sensitivity of sensor.
Technical scheme that the present invention takes is particularly as follows: a kind of high sensitivity micro-nano huge pressure drag rain sensor, including series connection
The multiple sensing units connected, and connect the current electrode of sensing unit to, signal detection extraction electrode to with reference to drawing
Electrode pair；Each sensing unit includes glass substrate layers, silicon bottom and the insulating silicon oxide layer being sequentially stacked from the bottom to top；At the bottom of silicon
Layer bottom is provided with groove, the stress strain film of the i.e. sensing unit of silicon floor portions above groove；On insulating silicon oxide layer
Being provided with a pair sial hetero-junctions, the most each sial is heterogeneous becomes a rectangle aluminum and a rectangle doped silicon connects composition, aluminum with
Sial contact area between doped silicon forms contact berrier；A pair power supply is led to respectively on the doped silicon of each sial hetero-junctions
Electrode and a pair signal detection electrode；A pair sial hetero-junctions be symmetrical configuration be divided into the two ends of insulating silicon oxide layer,
And one of them is positioned at the stress strain film of sensing unit, as tested end, what another was positioned at sensing unit should be thinning
Outside film, as reference edge；Between adjacent two sensing units, one of them power electrode being located on tested end is connected, with
One of them power electrode being positioned at reference input is connected so that multiple sensing unit be formed at tested end with reference to defeated
Enter the sensor array of the cascaded structure that end is sequentially connected with respectively by power electrode；
Being positioned at one of them sensing unit at above-mentioned cascaded structure two ends, it is positioned at tested end and reference input, is not connected
Two power electrodes between be connected；Being positioned at another sensing unit at above-mentioned cascaded structure two ends, it is positioned at tested end and ginseng
Examine input, two not connected power electrodes are connected with two electrodes of current electrode centering respectively；
It is positioned at two sensing units at above-mentioned cascaded structure two ends, is each located in a pair signal detection electrode of tested end
Individual electrode is connected with an electrode of signal detection extraction electrode centering, is each located on a pair signal detection electricity of reference input
An electrode in extremely, is connected with an electrode with reference to extraction electrode centering.
Sensor of the invention makes silicon bottom be silicon cup type in use, silicon bottom bottom arranges groove, concurrently forms
Stress strain film；Two sial are heterogeneous becomes presser sensor structure, is divided on strain film and outside strain film, as quilt
Survey and reference.Detecting electrode is for checking the electromotive force of sial hetero-junctions, when the external world exists stress, the contact gesture of sial hetero-junctions
Base will change, hetero-junctions resistance generation acute variation, forms huge piezoresistive effect.Aluminum hetero-junctions as reference section lies prostrate
Peace characteristic changing is not to be caused by stress, can get rid of the impact of temperature as the reference circuit of difference.By being pointed to tested end
Carry out difference processing with the detection signal of reference input, other sensor measurement being tied such as temperature etc factor can be got rid of
Fruit impact.
Further, present invention additionally comprises support, support is hemisphere, on it uniform be provided with multiple sensor array peace
Tankage, sensor array is installed in mounting groove.In use, biography can be respectively mounted in each mounting groove of hemispheroidal support
Sensor array so that multiple sensors can effectively distinguish the size and Orientation of wind-force, can improve the reliability of data.Through certain
Algorithm adjust after can eliminate the wind-force impact on sensor data measured, obtain real rainfall value.
Further, in rain sensor of the present invention, in each sensing unit, doped silicon is additionally provided with Si3N4Layer, available
In insulation and protection.
Preferably, in the present invention, each sensor array includes 9 sensing units, in 3 row × 3 array structures.Relative to single
Passing sensor unit, the advantage of sensor array is to reflect the change that an areal pressure is overall, but if arranges
The sensor unit number becoming more will increase the difficulty of wiring, and the number of probes being cascaded too much can
Cause excessive being not easy to of resistance of sensor to be measured, and the design structure of 3 × 3 can be while ensureing sensor high sensitivity
The change of a range of pressure can be measured, be suitable for the measurement of rainfall variable signal.
Preferably, in each sensing unit of inventive sensor array, silicon top layer uses the silicon material of Doping Phosphorus ion.
The present invention also provides for the preparation method of above-mentioned high sensitivity micro-nano huge pressure drag rain sensor, comprises the following steps:
Step one: selecting the material that the SOI silicon in N-type 100 crystal orientation is prepared as sensor chip, the thickness of silicon bottom is
350-800um, insulating silicon oxide layer thickness is 100-200nm, and top layer silicon thickness is 100-200nm；
Step 2: respectively rinse soi wafer 7-13 minute with sulphuric acid with hydrogen peroxide mixed solution and deionization DI water respectively；
Step 3: at the silicon top layer of SOI silicon with 5-9 ° of angle of inclination, 20keV energy injection 1017The agent of every cubic centimetre
The phosphonium ion of amount, the time is 10-12 minute, is then placed in high-temperature annealing furnace the 20-40 second so that phosphonium ion is uniformly distributed, shape
Become doped silicon；
Step 4: spin coating photoresist, utilizes the mask plate of silicon structure and electrode leads to client mouth thereof in sial hetero-junctions to carry out photoetching；
The carrier of original graph structure when mask plate is photoetching, the figure on mask plate is then transferred to the photoresist of aforementioned spin coating by photoetching
On, change the shape of photoresist；
Step 5: at SF6/N2Under atmosphere, by ICP dry etching silicon top layer, formed sial hetero-junctions silicon structure and
Its electrode leads to client；
Step 6: be immersed in 49%HF solution 1-2 minute and remove TEOS, and by TMAH wet etching SOI that temperature is 363K
Silicon silicon bottom, corrodes and trapezoidal groove；Trapezoidal groove is positioned at the middle part of silicon bottom, and the silicon floor portions at its top is and is subject to
Stress-strain thin film；The thickness of stress strain film can be controlled in 20 μm；
Step 7: by LPCVD technology at the Si of top layer deposition 1～2 μm of silicon chip3N4, as insulating barrier and protecting film；
Step 8: to Si3N4Layer carries out being lithographically derived the window of contact hole, i.e. aluminum and doped silicon and realizes the via of Ohmic contact；
Step 9: spin coating photoresist, on a photoresist with temperature 400-450 DEG C, the time be 30-50 minute sputtering a layer thickness with
The metallic aluminium that doped silicon is consistent；
Step 10: be lithographically formed electrode and the figure of sial hetero-junctions, removes the photoresist of bottom, by aluminum with Liftoff technique
Being discharged in the same plane on silicon top layer, contact formation sial heterojunction structure with doped silicon；
Step 11: with temperature 200-300 DEG C, utilizes anode linkage technology, is bonded in Pyrex substrate by silicon bottom；
Step 12: scribing, encapsulation, complete high sensitivity micro-nano huge pressure drag rain sensor and make.
Invention additionally discloses the measurement structure of above-mentioned high sensitivity micro-nano huge pressure drag rain sensor, it includes sensor array
Row, power supply, signal acquisition circuit and signal processing circuit；
The quantity of sensor array is multiple, and power supply provides benchmark constant-current source by current electrode to each sensor array；
Signal acquisition circuit includes organizing connected differential amplifier circuit and filter circuit more；In each group, differential amplifier circuit defeated
Enter end connect respectively the signal detection extraction electrode of a sensor array to with reference to extraction electrode pair, the output of filter circuit
End connects signal processing circuit；
Signal processing circuit includes multichannel a/d converter, FPGA and microprocessor；AD conversion passage in multichannel a/d converter
Quantity identical with the quantity of sensor array；The input of each AD conversion passage connects one in signal acquisition circuit respectively
Filter circuit, outfan connects FPGA；
The sensor array signal that each AD conversion passage is exported by FPGA is acquired, and the data output extremely micro-place that will collect
Reason device.Microprocessor is responsible for the sensor signal collected being analyzed the rainfall value corresponding with calculating signal and controlling
LCD shows.
In the above-mentioned measurement structure of the present invention, power supply can use DC source, and power supply is signals collecting also by light-coupled isolation
Circuit provides working power；Also power supply signal can be processed, obtain LDO linear power supply, work for signal processing circuit.
FPGA can use the XC3030-70 chip of Xilinx company.LCD display unit can use TFTLCD.
Further, the measurement structure of the present invention also includes display unit, and the input of display unit connects microprocessor.
Beneficial effect
High sensitivity micro-nano of the present invention huge pressure drag rain sensor is huge piezoresistive effect based on sial hetero-junctions, is pressed by outside
Power causes sensor chip formation mechanical stress change to make the silicon in sial hetero-junctions and the contact berrier of aluminum contact portion, comes real
Existing huge piezoresistive effect.Compared with prior art, there is following progress:
1. can eliminate the temperature environment impact on pressure drag resistance: by the sial hetero-junctions difference that two structural properties of employing are consistent
Being arranged on the two ends of sensor, wherein one end is arranged on outside stress strain film, as the reference circuit of difference, the electricity of its output
The difference of the signal of telecommunication that signal exports with resonator, as the differential input signal of discharge circuit, effectively raises measurement result
Accuracy；
2. have employed the support of hemispheroidal sensor, can effectively distinguish the size and Orientation of wind-force, improve the reliable of data
Property, the wind-force impact on sensor data measured can be eliminated after certain algorithm adjusts, obtain real rainfall
Value；
3. rain sensor have employed the sensing unit of sial hetero-junctions of arranged in series, solves sial hetero-junctions low-resistance
Characteristic, the sensor measurement of array can increase the area to rainfall measurement, improve transducer sensitivity；
4. the presser sensor structure selected is the pressure resistance type resistance of a kind of novel sial hetero-junctions, its huge piezoresistive effect
Resistor-strain coefficient is up to 843, exceeds a lot than the resistor-strain coefficient (about 100) of the silicon pressure drag of conventional bulk processing, sial
The huge piezoresistive effect that the varistor of hetero-junctions produces under stress can be greatly improved detection sensitivity and the resolution of sensor
Rate.Use that the varistor controllability made by this structure is strong, stability is high, structural integrity good, be easily achieved array；
5. can be realized by the MEMS manufacturing process of standard, it is not necessary to new technology, save manufacturing cost；
6. selecting the soi wafer in N-type 100 crystal orientation, soi wafer has the advantage that much body silicon is incomparable: it can
Realized the electrical isolation of silicon top layer and bottom by middle insulating oxide, on the one hand can ensure that sensor is operated in reliably
In hot environment, on the other hand can completely eliminate the parasitic latch-up of sensor.Use the sensor that this material is made
Also have radioprotective, parasitic capacitance is little, short channel effect is little and the advantage such as power consumption.
To sum up, the present invention can increase substantially the sensitivity of silicon pressure sensor and resolution, reduction temperature to sensor
The impact of performance, improves the precision of rainfall detection data, reliability and real-time.
Accompanying drawing explanation
Fig. 1 is high sensitivity micro-nano huge pressure drag rain sensor array element structural representation；
Fig. 2 is the sensing unit silicon top layer top view of sial hetero-junctions；
Fig. 3 is the sensing unit silicon top layer profile of sial hetero-junctions；
Fig. 4 is sensor stand schematic diagram；
Fig. 5 is pressure sensor chip preparation flow schematic diagram；
Fig. 6 is high sensitivity micro-nano huge pressure drag rain sensor and peripheral circuit connection system block diagram.
Detailed description of the invention
Further describe below in conjunction with the drawings and specific embodiments.
With reference to Fig. 1, the high sensitivity micro-nano huge pressure drag rain sensor of the present invention, including: include being connected in series is multiple
Sensing unit 34, and connect the current electrode of sensing unit 34 to 27 (28), signal detection extraction electrode is to 29 (31) and ginseng
Examine extraction electrode to 30 (32)；
With reference to Fig. 3, each sensing unit includes glass substrate layers 26, silicon bottom 25 and the insulating silica being sequentially stacked from the bottom to top
Silicon layer 12；Silicon bottom 25 bottom is provided with groove, the stress strain film 27 of the silicon bottom 25 i.e. sensing unit of part above groove；
Insulating silicon oxide layer 12 is provided with a pair sial hetero-junctions, and the most each sial is heterogeneous becomes rectangle aluminum 13 and a rectangle
Doped silicon 15 connects composition, and the sial contact area between aluminum 13 and doped silicon 15 forms contact berrier；Each sial hetero-junctions
A pair power electrode 5/8 (16/19) and a pair signal detection electrode 6/7 (17/18), each electrode is led to respectively on doped silicon 15
It is connected to aluminium terminal 1,2,3,4,20,21,22,23,24；A pair sial hetero-junctions be symmetrical configuration be divided into insulation two
The two ends of silicon oxide layer 12, and one of them is positioned at the stress strain film 27 of sensing unit, as tested end, another position
Outside the strain film 27 of sensing unit, as reference edge；
With reference to Fig. 1, between adjacent two sensing units, one of them power electrode being located on tested end is connected, and is located on
One of them power electrode of reference input is connected, so that multiple sensing unit is formed at tested end and reference input
The sensor array of the cascaded structure being sequentially connected with by power electrode respectively；
Being positioned at one of them sensing unit at above-mentioned cascaded structure two ends, it is positioned at tested end and reference input, is not connected
Two power electrodes between be connected；Being positioned at another sensing unit at above-mentioned cascaded structure two ends, it is positioned at tested end and ginseng
Examine input, two not connected power electrodes are connected with two electrodes 27 (28) of current electrode centering respectively；
It is positioned at two sensing units at above-mentioned cascaded structure two ends, is each located in a pair signal detection electrode of tested end
Individual electrode is connected with an electrode 29 (31) of signal detection extraction electrode centering, is each located on a pair signal of reference input
An electrode in detecting electrode, is connected with the electrode 30 (32) with reference to extraction electrode centering.
Sensor of the invention makes silicon bottom be silicon cup type in use, silicon bottom bottom arranges groove, concurrently forms
Stress strain film；Two sial are heterogeneous becomes presser sensor structure, is divided on strain film and outside strain film, as quilt
Survey and reference.Detecting electrode is for checking the electromotive force of sial hetero-junctions, when the external world exists stress, the contact gesture of sial hetero-junctions
Base will change, hetero-junctions resistance generation acute variation, forms huge piezoresistive effect.Aluminum hetero-junctions as reference section lies prostrate
Peace characteristic changing is not to be caused by stress, can get rid of the impact of temperature as the reference circuit of difference.By being pointed to tested end
Carry out difference processing with the detection signal of reference input, other sensor measurement being tied such as temperature etc factor can be got rid of
Fruit impact.
Embodiment
With reference to Fig. 1, in the present embodiment, sensor array includes 9 sensing units, in 3 row × 3 array structures.Relative to list
Individual biography sensor unit, the advantage of sensor array is to reflect the change that an areal pressure is overall, but if sets
It is set to more sensor unit number and will increase the difficulty of wiring, and the number of probes being cascaded is too many
Excessive being not easy to of resistance of sensor can be caused to measure, and the design structure of 3 × 3 can be while ensureing sensor high sensitivity
The change of a range of pressure can be measured again, be suitable for the measurement of rainfall variable signal.
With reference to Fig. 4, present invention additionally comprises support 35, support 35 is hemisphere, uniform on it is provided with multiple sensor array
Row mounting groove 36, sensor array is installed in mounting groove.In use, can distinguish in each mounting groove of hemispheroidal support
Sensor array is installed so that multiple sensors can effectively distinguish the size and Orientation of wind-force, can improve the reliability of data.Warp
Cross after certain algorithm adjusts and can eliminate the wind-force impact on sensor data measured, obtain real rainfall value.
With reference to Fig. 3, in each sensing unit, doped silicon 15 is additionally provided with Si3N4Layer 24, can be used for insulating and protecting.
With reference to Fig. 5, the preparation method of high sensitivity micro-nano of the present invention huge pressure drag rain sensor, comprise the steps:
Step one: selecting the material that the SOI silicon in N-type 100 crystal orientation is prepared as sensor chip, the thickness of silicon bottom is
350-800um, insulating silicon oxide layer thickness is 100-200nm, and top layer silicon thickness is 100-200nm, as shown in Fig. 5 (1)；
Step 2: respectively rinse soi wafer 7-13 minute with sulphuric acid with hydrogen peroxide mixed solution and deionization DI water respectively；
Step 3: at the silicon top layer of SOI silicon with 5-9 ° of angle of inclination, 20keV energy injection 1017The agent of every cubic centimetre
The phosphonium ion of amount, the time is 10-12 minute, is then placed in high-temperature annealing furnace the 20-40 second so that phosphonium ion is uniformly distributed, as
Shown in Fig. 5 (2)；
Step 4: as shown in Fig. 5 (3), spin coating photoresist, utilize covering of silicon structure in sial hetero-junctions and electrode leads to client mouth thereof
Lamina membranacea carries out photoetching；
Step 5: at SF6/N2Under atmosphere, by ICP dry etching top layer silicon, as shown in Fig. 5 (4)；
Step 6: be immersed in 49%HF solution and remove TEOS (tetraethyl orthosilicate) in 1-2 minute, and be the TMAH of 363K by temperature
Wet etching SOI silicon silicon bottom, corrodes and trapezoidal groove, as shown in Fig. 5 (5)；
Step 7: by LPCVD technology at the Si of top layer deposition 1～2 μm of silicon chip3N4, as insulating barrier and protecting film, such as figure
Shown in 5 (6)；
Step 8: be lithographically derived the window of contact hole, i.e. obtains aluminum and doped silicon and realizes the via of Ohmic contact, such as Fig. 5 (7) institute
Show；
Step 9: as shown in Fig. 5 (8), spin coating photoresist, on a photoresist with temperature 400-450 DEG C, the time is 30-50 minute
The metallic aluminium that sputtering a layer thickness is consistent with doped silicon, as shown in Fig. 5 (9)；
Step 10: as shown in Fig. 5 (10), is lithographically formed electrode and the figure of sial hetero-junctions, removes bottom with Liftoff technique
Photoresist, aluminum is discharged in the same plane of silicon top layer, contact with doped silicon formation sial hetero-junctions sensing arrangement, as
Shown in Fig. 5 (11)；
Step 11: with temperature 200-300 DEG C, utilizes anode linkage technology, is bonded in Pyrex substrate by silicon bottom, as
Shown in Fig. 5 (12)；
Step 12: scribing, encapsulation, complete high sensitivity micro-nano huge pressure drag rain sensor and make.
The present invention is by preparing the presser sensor structure of sial hetero-junctions, two structure spies on the silicon top layer of SOI Substrate
Property consistent presser sensor resistance be separately positioned on that stress strain film is outer and on stress strain film, by strain film front
Carrying out power exchange with external environment, the presser sensor structure of the sial hetero-junctions of pair of parallel setting constitutes the two of Differential Input
End, the varistor of two sial hetero-junctions all uses same constant current source power supply.
When the external world with the presence of stress when, will strain film layer formed a stress gradient along stress direction divide
Cloth, the local contact berrier that the presser sensor structure silicon of the sial hetero-junctions being on stress strain film contacts with aluminum can be with
The change of stress and change, the resistance ultimately resulting in pressure sensitive structural changes, and forms huge piezoresistive effect.Differential amplifier circuit two
End is connected to two detecting electrodes of sensor respectively.The voltage of now circuit output is precisely due to the voltage that STRESS VARIATION causes becomes
Change, after amplifying filtering, then control multichannel a/d converter by FPGA and measure the changing value of output voltage, to output
Voltage carries out with force value demarcating the precise information that can be obtained by the corresponding stress intensity of this voltage.
Also soft rubber can be set on silicon top layer, for isolation and the contacting, to avoid by raindrop erosion of external environment
Pollution.Silicon bottom is provided with trapezoidal groove, can reduce the stress loss of chip, in order to improve the sensitivity of sensor.
Sensor chip is prepared in scheme, by soi wafer silicon top layer by the certain density phosphonium ion that adulterates, then uses
Be MEMS dry etching formed obtain a part for silicon in sial hetero-junctions, utilize Liftoff technique to obtain sial hetero-junctions
A part for middle aluminum and extraction electrode；Prepare the trapezoidal groove on silicon bottom and use MEMS isotropism wet corrosion technique；So
After by silicon chip key and on the glass substrate, with silicone rubber seal, completely cut off external environment.
The presser sensor structure of sial hetero-junctions is arranged in the stress strain film of silicon top layer, drop to sensing at raindrop
On device, the impulsive force of raindrop is changed into the mechanical deformation of sensor, when in strain regions, sial hetero-junctions is squeezed and stretches
The contact berrier of sial hetero-junctions will be changed.The sial hetero-junctions being arranged on outside stress strain film, it is not by STRESS VARIATION
Impact, as the reference voltage of Differential Input, eliminate the temperature impact for sensor.
With reference to Fig. 6, the measurement structure of inventive sensor includes sensor array, power supply, signal acquisition circuit and signal
Process circuit；
The quantity of sensor array is multiple, is separately mounted in the mounting groove of support；Power supply passes through current electrode to each sensing
Device array provides benchmark constant-current source；
Signal acquisition circuit includes organizing connected differential amplifier circuit and filter circuit more；In each group, differential amplifier circuit defeated
Enter end connect respectively the signal detection extraction electrode of a sensor array to with reference to extraction electrode pair, the output of filter circuit
End connects signal processing circuit；
Signal processing circuit includes multichannel a/d converter, FPGA and microprocessor；AD conversion passage in multichannel a/d converter
Quantity identical with the quantity of sensor array；The input of each AD conversion passage connects one in signal acquisition circuit respectively
Filter circuit, outfan connects FPGA；
The sensor array signal that each AD conversion passage is exported by FPGA is acquired, and the data output extremely micro-place that will collect
Reason device.Microprocessor is responsible for the sensor signal collected being analyzed the rainfall value corresponding with calculating signal and controlling
LCD shows.
Concrete measuring method is: current electrode is to 27/28 as the Constant current input outfan of sensor array, and signal is examined
Survey extraction electrode to 29/31 as detection signal input output end, with reference to exit 30/32 as reference signal input and output
End.Total resistance of sensor array is R, and the contact resistance of extraction electrode is Rr.When rain sensor is acted on by external force F
Time, strain films generation elastic deformation, total change in resistance of its array is Δ R, defeated at the effect bottom electrode voltage of additional constant-current source I
Going out for Vout1=I* (2Rr+ Δ R+R+Rt), wherein Rt is the change of the sensor array resistance that variations in temperature causes.Due to ginseng
Examine that end measures is not reference input terminal voltage by influence of crust deformation, and its voltage output Vout2=I* (2Rr+R+Rt), through difference
Dividing the output voltage after input is V=Vout1-Vout2=I* Δ R, this shows that the output voltage of signal is by rainfall
Impulsive force cause, eliminate the impact of temperature factor.The voltage of output becomes digital signal to adopt through FPGA through AD conversion
Giving microprocessor single-chip microcomputer to process after collection, the relation through the available voltage of many experiments with rainfall calculates and i.e. can get rainfall
Value.
The above is only the preferred embodiment of the present invention, it should be pointed out that: for the ordinary skill people of the art
For Yuan, under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (7)
1. a high sensitivity micro-nano huge pressure drag rain sensor, is characterized in that, including the multiple sensing units being connected in series, with
And connect the current electrode of sensing unit to, signal detection extraction electrode to with reference to extraction electrode pair；
Each sensing unit includes glass substrate layers, silicon bottom and the insulating silicon oxide layer being sequentially stacked from the bottom to top；Silicon bottom
Bottom is provided with groove, the stress strain film of the i.e. sensing unit of silicon floor portions above groove；Set on insulating silicon oxide layer
Having a pair sial hetero-junctions, the most each sial is heterogeneous becomes a rectangle aluminum and a rectangle doped silicon connects composition, aluminum with mix
Sial contact area between miscellaneous silicon forms contact berrier；A pair power supply electricity is led to respectively on the doped silicon of each sial hetero-junctions
Pole and a pair signal detection electrode；A pair sial hetero-junctions be symmetrical configuration be divided into the two ends of insulating silicon oxide layer, and
One of them is positioned at the stress strain film of sensing unit, and as tested end, another is positioned at the strain film of sensing unit
Outward, as reference edge；
Between adjacent two sensing units, one of them power electrode being located on tested end is connected, and is located on reference input
One of them power electrode of end is connected, so that multiple sensing unit is formed at tested end with reference input respectively by electricity
The sensor array of the cascaded structure that source electrode is sequentially connected with；
Being positioned at one of them sensing unit at above-mentioned cascaded structure two ends, it is positioned at tested end and reference input, is not connected
Two power electrodes between be connected；Being positioned at another sensing unit at above-mentioned cascaded structure two ends, it is positioned at tested end and ginseng
Examine input, two not connected power electrodes are connected with two electrodes of current electrode centering respectively；
It is positioned at two sensing units at above-mentioned cascaded structure two ends, is each located in a pair signal detection electrode of tested end
Individual electrode is connected with an electrode of signal detection extraction electrode centering, is each located on a pair signal detection electricity of reference input
An electrode in extremely, is connected with an electrode with reference to extraction electrode centering.
High sensitivity micro-nano the most according to claim 1 huge pressure drag rain sensor, is characterized in that, also include support,
Frame is hemisphere, uniform on it is provided with multiple sensor array mounting groove, and sensor array is installed in mounting groove.
High sensitivity micro-nano the most according to claim 1 huge pressure drag rain sensor, is characterized in that, in each sensing unit,
Si it is additionally provided with on doped silicon3N4Layer.
High sensitivity micro-nano the most according to claim 1 huge pressure drag rain sensor, is characterized in that, each sensor array bag
Include 9 sensing units, in 3 row × 3 array structures.
5., according to the high sensitivity micro-nano huge pressure drag rain sensor described in any one of Claims 1-4, it is characterized in that, respectively pass
In sense unit, silicon top layer uses the silicon material of Doping Phosphorus ion.
6. the preparation method of the high sensitivity micro-nano huge pressure drag rain sensor described in claim 1 to 5, is characterized in that, including
Following steps:
Step one: selecting the material that the SOI silicon in N-type 100 crystal orientation is prepared as sensor chip, the thickness of silicon bottom is
350-800um, insulating silicon oxide layer thickness is 100-200nm, and top layer silicon thickness is 100-200nm；
Step 2: respectively rinse soi wafer 7-13 minute with sulphuric acid with hydrogen peroxide mixed solution and deionization DI water respectively；
Step 3: at the silicon top layer of SOI silicon with 5-9 ° of angle of inclination, 20keV energy injection 1017The dosage of every cubic centimetre
Phosphonium ion, the time is 10-12 minute, is then placed in high-temperature annealing furnace the 20-40 second so that phosphonium ion is uniformly distributed, is formed
Doped silicon；
Step 4: spin coating photoresist, utilizes the mask plate of silicon structure and electrode leads to client mouth thereof in sial hetero-junctions to carry out photoetching；
Step 5: at SF6/N2Under atmosphere, by ICP dry etching silicon top layer, formed sial hetero-junctions silicon structure and
Electrode leads to client；
Step 6: be immersed in 49%HF solution 1-2 minute and remove TEOS, and by TMAH wet etching SOI silicon that temperature is 363K
Chip silicon bottom, corrodes and trapezoidal groove；Trapezoidal groove is positioned at the middle part of silicon bottom, and the silicon floor portions at its top is stress
Strain film；
Step 7: by LPCVD technology at the Si of top layer deposition 1～2 m of silicon chip3N4, as insulating barrier and protecting film；
Step 8: to Si3N4Layer carries out being lithographically derived the window of contact hole, i.e. aluminum and doped silicon and realizes the via of Ohmic contact；
Step 9: spin coating photoresist, on a photoresist with temperature 400-450 DEG C, the time be 30-50 minute sputtering a layer thickness with
The metallic aluminium that doped silicon is consistent；
Step 10: be lithographically formed electrode and the figure of sial hetero-junctions, removes the photoresist of bottom, by aluminum with Liftoff technique
Being discharged in the same plane on silicon top layer, contact formation sial heterojunction structure with doped silicon；
Step 11: with temperature 200-300 DEG C, utilizes anode linkage technology, is bonded in Pyrex substrate by silicon bottom；
Step 12: scribing, encapsulation, complete high sensitivity micro-nano huge pressure drag rain sensor and make.
7. measurement structure based on the high sensitivity micro-nano huge pressure drag rain sensor described in claim 1 to 5, is characterized in that,
Including sensor array, power supply, signal acquisition circuit and signal processing circuit；
The quantity of sensor array is multiple, and power supply provides benchmark constant-current source by current electrode to each sensor array；
Signal acquisition circuit includes organizing connected differential amplifier circuit and filter circuit more；In each group, differential amplifier circuit defeated
Enter end connect respectively the signal detection extraction electrode of a sensor array to with reference to extraction electrode pair, the output of filter circuit
End connects signal processing circuit；
Signal processing circuit includes multichannel a/d converter, FPGA and microprocessor；AD conversion passage in multichannel a/d converter
Quantity identical with the quantity of sensor array；The input of each AD conversion passage connects one in signal acquisition circuit respectively
Filter circuit, outfan connects FPGA；
The sensor array signal that each AD conversion passage is exported by FPGA is acquired, and the data output extremely micro-place that will collect
Reason device.
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