CN105928989B - Humidity sensor and its correction of temperature drift method based on the huge piezo-resistive arrangement of π type - Google Patents
Humidity sensor and its correction of temperature drift method based on the huge piezo-resistive arrangement of π type Download PDFInfo
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Abstract
The present invention provides a kind of humidity sensor based on the huge piezo-resistive arrangement of π type, including 4 data collectors, data conversion integrated layer and filter screen, 4 data collector point two rows are distributed on data conversion integrated layer, the filter screen is placed on the detection zone of the data collector, and the data conversion integrated layer includes the very color liquid crystal display of four-point resistance measurement circuit, CS1180 analog-digital converter, STM32F407 single-chip microcontroller and TFT；4 data collectors give collected data to CS1180 analog-digital converter by four-point resistance measurement amount of circuitry circuit transmission, it exports after the conversion of CS1180 analog-digital converter to STM32F407 single-chip microcontroller, the very color liquid crystal display of TFT is sent to by STM32F407 single-chip microcontroller, in the very color liquid crystal display screen display of TFT；In addition, the present invention also provides the correction of temperature drift methods of humidity sensor.
Description
Technical field
The present invention relates to a kind of humidity sensor and its correction of temperature drift method based on the huge piezo-resistive arrangement of π type, belongs to micro-nano
Mechatronic Systems sensor technical field.
Background technique
With the fast development of MEMS (MEMS) technology, more and more MEMS devices since the eighties in last century
Part is widely used in the every field such as industrial or agricultural, aerospace, weather environment, defense military.And in recent years with micro- spy
The devices such as needle and miniflow meter are succeeded in developing, and large number of MEMS device enters chemical analysis, atmospheric detection and temperature and humidity
The fields such as detection.However, current humidity sensor cannot achieve real-time high-precision, Gao Ling since this body structure of device limits
The moisture measurement of sensitivity, high reliability.
Traditional humidity sensor mostly uses greatly resistance or capacitive dew cell to the water vapor concentration in air
Detected, but due to the change of the dielectric constant with temperature of water and high molecular polymer be it is nonsynchronous, be easy to produce temperature
Drift, while being easy to be influenced by illumination, so in the high-precision difficult to realize changed to small humidity, high-sensitivity measurement.
Therefore influence and muting sensitivity status to temperature is needed to handle.
Summary of the invention
The present invention provides a kind of based on the huge pressure drag of π type to solve drawbacks described above and deficiency existing in the prior art
The piezoresistance coefficient of the humidity sensor and its correction of temperature drift method of structure, the humidity sensor increases with the equal order of magnitude of the coefficient of strain
Add, the greatly high sensitivity of sensor, can effectively capture humidity variation small in air, expand measuring range.
In order to solve the above technical problems, the present invention provides a kind of humidity sensor based on the huge piezo-resistive arrangement of π type, including 4
A data collector, data conversion integrated layer and filter screen, 4 data collector point two rows are distributed in data conversion collection
In stratification, the filter screen is placed on the detection zone of the data collector, and the data conversion integrated layer includes 4 resistance
The very color liquid crystal display of measuring circuit, CS1180 analog-digital converter, STM32F407 single-chip microcontroller and TFT；4 data collectors will
Collected data give CS1180 analog-digital converter, the conversion of CS1180 analog-digital converter by four-point resistance measurement circuit transmission
After export to STM32F407 single-chip microcontroller, the very color liquid crystal display of TFT is sent to by STM32F407 single-chip microcontroller, it is very color in TFT
Liquid crystal display screen display；
The data collector includes that substrate, stressor layers, detection zone and the huge piezo-resistive arrangement of π type, the stress are placed on institute
It states in substrate, the detection zone and the huge piezo-resistive arrangement of π type are distributed in the stressor layers, wherein detection zone is placed in the stress
The center of layer, the huge piezo-resistive arrangement of π type are two, and distribution is placed in the two sides of the detection zone and is located at the stressor layers edge,
Two huge piezo-resistive arrangements of π type are connected by the connecting line of metal aluminium material, and by a constant current source power supply；The π type is huge
Piezo-resistive arrangement includes silicon structure area, germanium structural area and golden structural area, and wherein silicon structure area is two sections, and distribution is placed in the germanium junction structure
The both ends in area, the gold structural area are placed in the same side of the silicon structure area, germanium structural area, and the length etc. of the golden structural area
In the sum of Liang Duan silicon structure area and the length of germanium structural area, the intersection of the silicon structure area and the germanium structural area is silicon-germanium
Hetero-junctions, it is described gold structural area and the silicon structure area, germanium structural area intersection be gold-Si-Ge heterojunction；The germanium junction structure
The other side in area is equipped with potential monitoring point；The side of the huge piezo-resistive arrangement of π type is equipped with temperature sensor, is used for real-time detection ring
Border temperature.
Further, the solid support structure of monocrystalline silicon material is equipped between the stressor layers and the substrate, for preventing
Stressor layers are ruptured because pressure is excessive.
Further, heating device is equipped between the stressor layers and the solid support structure, the heating device is more
Crystal silicon resistance wire.
Further, the data collector further includes that two sizes, composition materials are identical with the huge piezo-resistive arrangement of π type total
Mould signal compensation structure, two common-mode signal collocation structures are located at the both ends of the detection zone and are located at the stressor layers side
At edge, square structure, the common-mode signal collocation structure and the huge pressure drag of π type are formed with two huge piezo-resistive arrangements of π type
Structure is connected by the connecting line of metal aluminium material, and by the same constant current source power supply.
Further, U-shaped stress enhancing structure is equipped with around the huge piezo-resistive arrangement of π type；The stress enhancing structure is
Groove-like structure in stressor layers is etched using RIE lithographic technique.
Further, the material of the substrate is glass, and the material of stressor layers is silica, and the material of detection zone is polyamides
Imines.
Further, it is equipped between the four-point resistance measurement circuit and the CS1180 analog-digital converter and is sequentially connected
Multiple selector and filtering and amplifying circuit；The filtering and amplifying circuit includes by resistance R1, R2, R3, R4 and amplifier AD620 structure
At first order amplifying circuit, the second order RC lowpass filter being made of resistance R5 and capacitor C1, resistance R7 and capacitor C2.
Further, the size of the Si-Ge heterojunction is (60-70) μm * 5 μm of * (50-150) nm, gold-Si-Ge heterojunction
Size be (60-70) μm * (35-50) μm * (50-150) nm.
Further, it is equipped with titanium structural area between the golden structural area and the silicon structure area, germanium structural area, for fixed gold
Structural area, the equal length of the length of the titanium structural area and the golden structural area.
The present invention also provides a kind of correction of temperature drift method of humidity sensor based on the huge piezo-resistive arrangement of π type, features
It is：STM32F407 single-chip microcontroller utilizes Quadratic Surface Fitting function HStandardInfluence of=the f (V, T) to temperature drift carries out real-time compensation
Amendment, the Quadratic Surface Fitting function HStandardThe preparation method of=f (V, T) includes the following steps：
Humidity sensor is put into constant temperature humidity chamber by step 1, humidity conduct when temperature T=20 is spent
Standard humidity HStandard, the temperature in chamber is then adjusted, adjustable range is -20-60 degree, and step-length is 10 degree, obtains different temperatures
The output voltage values V (T) of lower humidity sensor；
Step 2 changes standard humidity HStandard, step 1 is repeated, the humidity sensor under different temperatures and different humidity is obtained
Output voltage values V (the H of deviceStandard, T), using the output voltage values V of humidity sensor and temperature value T as standard humidity to be built
Surface equation HStandardThe input variable of=(V, T), therefore the influence of temperature factor can be taken into account when analyzing humidity；
Step 3, using above-mentioned experiment measurement for constructing surface equation HStandardThe discrete data of=(V, T) carries out secondary
Surface fitting, and Quadratic Surface Fitting function H is determined using least square methodStandardThe coefficient of independent variable V and T in=f (V, T),
So that it is determined that Quadratic Surface Fitting function HStandard=f (V, T).
Present invention advantageous effects achieved：The present invention provides a kind of humidity sensor based on the huge piezo-resistive arrangement of π type
The realization principle of device, the sensor is：After vapour molecule in environment filters off impurity through filter screen, it is optimal to be integrated into performance
High-molecular organic material polyimides absorbs, due to the filtration of the excellent properties and filter screen of polyimides, Neng Goushi
Now Humidity Detection work in the presence of a harsh environment, has expanded the use scope of this humidity sensor.The data of the sensor simultaneously
There are two Si-Ge heterojunctions and a gold-Si-Ge heterojunction composition huge piezo-resistive arrangement of π type using tool for collector, and in π
By the stress enhancing structure of RIE etching production around the huge piezo-resistive arrangement of type, the piezoresistance coefficient of humidity sensor can be made and answered
Variable coefficient increases with having the order of magnitude, is used in combination by two kinds of hetero-junctions, and the huge piezo-resistive arrangement of π type can be simultaneously transversely and vertical
To amplification stress, bigger resistance variation is generated under identical stress condition, fundamentally improves humidity sensor
Sensitivity；The pressure sensing structure of the humidity sensor can be guaranteed in complicated extraneous ring using two common-mode signal collocation structures
Measurement accuracy under border；Stressor layers stress under extreme working position is excessive and rupture in order to prevent, this humidity sensor exists
It is equipped with the solid support structure that monocrystalline silicon is constituted below stressor layers, provides protection under limit condition of operation for stressor layers, makes this
The measurement range of humidity sensor and use occasion are all expanded；In addition, the sensor use four-point resistance measurement method with
And amplification, the filtering conditioning circuit of signal, more accurately signal can be obtained, weaken the extraneous factors such as noise to testing result
It influences, can achieve high-precision, the effect of stably measured.Being averaged again after using 4 data collectors to obtain data can be with
The measurement accuracy and stability of raising system.The correction of temperature drift method of humidity sensor provided by the invention can effectively improve inspection
The accuracy of survey, the influence for avoiding temperature from generating moisture measurement.
Detailed description of the invention
The data collector structural schematic diagram of Fig. 1 present invention；
The structural schematic diagram of the huge piezo-resistive arrangement of π type of Fig. 2 present invention；
The overall structure diagram of Fig. 3 present invention；
The filtering and amplifying circuit figure of Fig. 4 present invention；
The humidity sensor workflow schematic diagram of Fig. 5 present invention；
The humidity sensor correction of temperature drift method schematic diagram of Fig. 6 present invention.
Wherein：1 substrate；2 detection zones；3 stress enhancing structures；4 stressor layers；The 5 huge piezo-resistive arrangements of π type；The compensation of 6 common-mode signals
Structure；7 solid support structures；8 silicon structure areas；9 germanium structural areas；10 titanium structural areas；11 gold medal structural areas；12 Si-Ge heterojunctions；13
Gold-Si-Ge heterojunction；14 heating devices；15 temperature sensors；16 potential measurement points；17 data collectors；Eighteen data conversion
Integrated layer；19 filter screens.
Specific embodiment
The invention will be further described below in conjunction with the accompanying drawings.Following embodiment is only used for clearly illustrating this hair
Bright technical solution, and not intended to limit the protection scope of the present invention.
As shown in Figs. 1-5, the present invention provides a kind of humidity sensor based on the huge piezo-resistive arrangement of π type, including 4 data
Collector 17, data conversion integrated layer 18 and filter screen 19,4 data collectors, 17 points of two rows are distributed in data conversion
On integrated layer 18, the filter screen 19 is placed on the detection zone 2 of the data collector 17, the data conversion integrated layer 18
Including the very color liquid crystal display of four-point resistance measurement circuit, CS1180 analog-digital converter, STM32F407 single-chip microcontroller and TFT；4
Data collector gives collected data to CS1180 analog-digital converter, CS1180 modulus by four-point resistance measurement circuit transmission
It exports after converter conversion to STM32F407 single-chip microcontroller, the very color liquid crystal display of TFT is sent to by STM32F407 single-chip microcontroller,
The very color liquid crystal display screen display of TFT；
The data collector 17 includes substrate 1, stressor layers 4, detection zone 2 and the huge piezo-resistive arrangement 5 of π type, the stressor layers 4
It is placed in the substrate 1, the detection zone 2 and the huge piezo-resistive arrangement 5 of π type are distributed in the stressor layers 4, wherein detection zone 2 is set
In the center of the stressor layers 4, the huge piezo-resistive arrangement 5 of π type is two, respectively C1, C2, and distribution is placed in the two of the detection zone 2
Side and it is located at 4 edge of stressor layers, two huge piezo-resistive arrangements 5 of π type are connected by the connecting line of metal aluminium material, and
By a constant current source power supply, measurement error caused by constant-current source is reduced while providing stabling current because of power supply difference；The π
The huge piezo-resistive arrangement 5 of type includes silicon structure area 8, germanium structural area 9 and golden structural area 11, and wherein silicon structure area 8 is two sections, and distribution is placed in
The both ends of the germanium structural area 9, the gold structural area 11 are placed in the same side of the silicon structure area 8, germanium structural area 9, and described
The length of golden structural area 11 is equal to the sum of Liang Duan silicon structure area 8 and length of germanium structural area 9, the silicon structure area 8 and the germanium
The intersection of structural area 9 is Si-Ge heterojunction 12, the boundary of the gold structural area 11 and the silicon structure area 8, germanium structural area 9
Place is gold-Si-Ge heterojunction 13, and two of them Si-Ge heterojunction 12 is parallel to each other, and vertical with gold-Si-Ge heterojunction 13,
To form π structure, the referred to as huge piezo-resistive arrangement 5 of π type；The other side of the germanium structural area 9 is equipped with potential monitoring point 6；The π type
The side of huge piezo-resistive arrangement 5 is equipped with temperature sensor 15, is used for real-time detection environment temperature.
The material of the substrate 1 is glass, and the material of stressor layers 4 is silica, and the material of detection zone 2 is that polyamides is sub-
Amine can be realized the Humidity Detection under complex environment.
Stressor layers 4 rupture under extreme working position because pressure is excessive in order to prevent, the stressor layers 4 and the substrate
It is equipped with the solid support structure 7 of monocrystalline silicon material between 1, provides protection under limit condition of operation for stressor layers 4.The stress
Heating device 14 is equipped between layer 4 and the solid support structure 7, the heating device is polysilicon resistance silk.
U-shaped stress enhancing structure 3 is equipped with around the huge piezo-resistive arrangement 5 of π type；The stress enhancing structure 3 is to use
RIE lithographic technique etches the groove-like structure in stressor layers, and stress is more concentrated, and the deformation for generating stress variation is brighter
It is aobvious.
The data collector 17 further includes two sizes, composition materials common mode letter identical with the huge piezo-resistive arrangement of π type
Number collocation structure 6, respectively C3, C4, the two common-mode signal collocation structures 6 are located at the both ends of the detection zone 2 and are located at
4 edge of stressor layers forms square structure, the common-mode signal collocation structure 6 with two huge piezo-resistive arrangements 5 of π type
It is connected with the huge piezo-resistive arrangement 5 of the π type by the connecting line of metal aluminium material, and by the same constant current source power supply.
Experiments have shown that the size of the huge piezo-resistive arrangement 5 of π type greatly affected the pressure drag and the coefficient of strain of huge piezo-resistive arrangement,
In the present invention, the size of the Si-Ge heterojunction is (60-70) μm * 5 μm of * (50-150) nm, gold-Si-Ge heterojunction ruler
Very little is (60-70) μm * (35-50) μm * (50-150) nm.
It is equipped with titanium structural area 10 between the gold structural area 11 and the silicon structure area 8, germanium structural area 9, for fixed gold
Structural area 11, the equal length of the length of the titanium structural area 10 and the golden structural area 11.
The multichannel choosing being sequentially connected is equipped between the four-point resistance measurement circuit and the CS1180 analog-digital converter
Select device and filtering and amplifying circuit；The filtering and amplifying circuit includes being made of resistance R1, R2, R3, R4 and amplifier AD620
First order amplifying circuit, the second order RC lowpass filter being made of resistance R5 and capacitor C1, resistance R7 and capacitor C2.
The working principle of data collector 17 provided by the invention：Humidity Detection area surface covers a floor filter screen 19, will
Other impurities particle filtering in ambient enviroment other than moisture removal only absorbs moisture in air, absorbs the water in air
Huge 5 mass of piezo-resistive arrangement of π type changes and generates stress after point, and stress is enhanced by stress enhancing structure, after enhancing
Stress further result in huge 5 surface of piezo-resistive arrangement of π type especially its root area and generate larger stress, which leads to π type
The Si-Ge heterojunction 12 and gold-Si-Ge heterojunction 13 of huge piezo-resistive arrangement 5 generate huge piezoresistive effect, i.e., enhanced Stress relief
Huge change occurs for the barrier height of Si-Ge heterojunction 12 and gold-Si-Ge heterojunction 13, the quantity for passing through electronics, from
And make the great change of the resistance generation order of magnitude.Humidity variation is detected by resistance capacitance variation relative to conventional moisture sensors,
It is stress variation that this humidity sensor, which is first passed through humidity change transitions, is then enhanced by stress and is used in identical stress item
The huge piezo-resistive arrangement of π type for becoming apparent resistance variation can be generated under part, so that the present invention is significantly mentioned from sensing arrangement
The high sensitivity of humidity sensor, has widened its range ability.
Embodiment
The ga(u)ge factor of traditional body silicon piezo-resistive arrangement is generally between 50-100, and the shadow vulnerable to environment temperature
It rings.In order to illustrate the technical effect of humidity sensor provided by the invention, using four-point bending test device in -20-60 degree temperature
The ga(u)ge factor of the huge piezo-resistive arrangement of π type proposed by the present invention is measured in degree range, test result shows：π
The ga(u)ge factor of the huge piezo-resistive arrangement of type can achieve 1000 or more, meanwhile, investigate silicon-silicon-germanium heterojunction and gold-silicon-
Influence of the variation of silicon-germanium heterojunction size to ga(u)ge factor, when Si-Ge heterojunction length is 5 μm, strain sensitivity
Number of coefficients grade great change, can achieve 3000.In addition, temperature influences also relatively to show on the strain sensitivity of the huge piezo-resistive arrangement of π type
It writes, temperature drift error has reached 3%FS-5%FS.
The environment as locating for moisture measurement is complicated, what environment temperature was not constant between, and humidity sensor be by
Semi-conducting material manufacturing, so being highly prone to the influence of temperature.In view of environment temperature can bring sensor moisture measurement
No small error, therefore, the present invention provides a kind of correction of temperature drift method of humidity sensor based on the huge piezo-resistive arrangement of π type,
This method is：STM32F407 single-chip microcontroller utilizes Quadratic Surface Fitting function HStandardInfluence of=the f (V, T) to temperature drift is mended in real time
Repay amendment, the Quadratic Surface Fitting function HStandardThe preparation method of=f (V, T) includes the following steps：
Humidity sensor is put into constant temperature humidity chamber by step 1, humidity conduct when temperature T=20 is spent
Standard humidity HStandard, the temperature in chamber is then adjusted, adjustable range is -20-60 degree, and step-length is 10 degree, obtains different temperatures
The output voltage values V (T) of lower humidity sensor；
Step 2 changes standard humidity HStandard, step 1 is repeated, the humidity sensor under different temperatures and different humidity is obtained
Output voltage values V (the H of deviceStandard, T), using the output voltage values V of humidity sensor and temperature value T as standard humidity to be built
Surface equation HStandardThe input variable of=(V, T), therefore the influence of temperature factor can be taken into account when analyzing humidity；
Step 3, as shown in fig. 6, using above-mentioned experiment measurement for constructing HStandard=(V, T) surface equation it is discrete
Data carry out Quadratic Surface Fitting, and determine Quadratic Surface Fitting function H using least square methodStandardFrom change in=f (V, T)
The coefficient for measuring V and T, so that it is determined that Quadratic Surface Fitting function HStandard=f (V, T).Quadratic surface is determined using least square method
The coefficient of fitting function can make to use Quadratic Surface Fitting function HStandardThe humidity value and standard humidity value that=f (V, T) is calculated
HStandardBetween error it is minimum.
Quadratic Surface Fitting function HStandard=f (V, T) be sensor by measuring moisture, environment temperature and output voltage it
Between surface fitting mathematical forecasting model, be convenient to calculate after obtaining sensor output voltage and environment temperature tested
Humidity value.Quadratic Surface Fitting function HStandard=f (V, T) contains temperature T, non-thread between temperature and humidity by establishing
Property mapping relations removal temperature drift influence, realize temperature-compensating.The Quadratic Surface Fitting function is transplanted to STM32 single-chip microcontroller can
To carry out real time temperature drift compensation amendment.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvement and deformations can also be made, these improvement and deformations
Also it should be regarded as protection scope of the present invention.
Claims (10)
1. the humidity sensor based on the huge piezo-resistive arrangement of π type, it is characterised in that：It is integrated including 4 data collectors, data conversion
Layer and filter screen, 4 data collector point two rows are distributed on data conversion integrated layer, and the filter screen is placed in the number
According on the detection zone of collector, the data conversion integrated layer include four-point resistance measurement circuit, CS1180 analog-digital converter,
STM32F407 single-chip microcontroller and the very color liquid crystal display of TFT；4 data collectors survey collected data by 4 resistance
Amount circuit transmission gives CS1180 analog-digital converter, exports after the conversion of CS1180 analog-digital converter to STM32F407 single-chip microcontroller, by
STM32F407 single-chip microcontroller is sent to the very color liquid crystal display of TFT, in the very color liquid crystal display screen display of TFT；
The data collector includes that substrate, stressor layers, detection zone and the huge piezo-resistive arrangement of π type, the stress are placed on the base
On bottom, the detection zone and the huge piezo-resistive arrangement of π type are distributed in the stressor layers, wherein detection zone is placed in the stressor layers
Center, the huge piezo-resistive arrangement of π type are two, and distribution is placed in the two sides of the detection zone and is located at the stressor layers edge, two
The huge piezo-resistive arrangement of π type is connected by the connecting line of metal aluminium material, and by a constant current source power supply；The huge pressure drag of π type
Structure includes silicon structure area, germanium structural area and golden structural area, and wherein silicon structure area is two sections, and distribution is placed in the germanium structural area
Both ends, the gold structural area is placed in the same side of the silicon structure area, germanium structural area, and the length of the golden structural area is equal to two
The intersection of section the sum of silicon structure area and the length of germanium structural area, the silicon structure area and the germanium structural area is that silicon-germanium is heterogeneous
It ties, the intersection in the gold structural area and the silicon structure area, germanium structural area is gold-Si-Ge heterojunction；The germanium structural area
The other side is equipped with potential monitoring point；The side of the huge piezo-resistive arrangement of π type is equipped with temperature sensor, is used for real-time detection environment temperature
Degree.
2. the humidity sensor according to claim 1 based on the huge piezo-resistive arrangement of π type, it is characterised in that：The stressor layers
The solid support structure of monocrystalline silicon material is equipped between the substrate, for preventing stressor layers from rupturing because pressure is excessive.
3. the humidity sensor according to claim 2 based on the huge piezo-resistive arrangement of π type, it is characterised in that：The stressor layers
Heating device is equipped between the solid support structure, the heating device is polysilicon resistance silk.
4. the humidity sensor according to claim 1 based on the huge piezo-resistive arrangement of π type, it is characterised in that：The data are adopted
Storage further includes two sizes, composition materials common-mode signal collocation structure identical with the huge piezo-resistive arrangement of π type, and two described total
Mould signal compensation structure is located at the both ends of the detection zone and is located at the stressor layers edge, with two huge pressure drags of π type
Structure forms square structure, and the common-mode signal collocation structure and the huge piezo-resistive arrangement of π type pass through the connection of metal aluminium material
Line series connection, and by the same constant current source power supply.
5. the humidity sensor according to claim 1 based on the huge piezo-resistive arrangement of π type, it is characterised in that：The huge pressure of π type
It hinders and is equipped with U-shaped stress enhancing structure around structure；The stress enhancing structure is to be etched using RIE lithographic technique in stressor layers
On groove-like structure.
6. the humidity sensor according to claim 1 based on the huge piezo-resistive arrangement of π type, it is characterised in that：The substrate
Material is glass, and the material of stressor layers is silica, and the material of detection zone is polyimides.
7. the humidity sensor according to claim 1 based on the huge piezo-resistive arrangement of π type, it is characterised in that：4 points of electricity
The multiple selector being sequentially connected and filtering and amplifying circuit are equipped between resistance measuring circuit and the CS1180 analog-digital converter；
The filtering and amplifying circuit includes the first order amplifying circuit being made of resistance R1, R2, R3, R4 and amplifier AD620, by resistance
The second order RC lowpass filter that R5 and capacitor C1, resistance R7 and capacitor C2 are constituted.
8. the humidity sensor according to claim 1 based on the huge piezo-resistive arrangement of π type, it is characterised in that：The silicon-germanium is different
The size of matter knot is (60-70) μm * 5 μm of * (50-150) nm, and gold-Si-Ge heterojunction size is (60-70) μm * (35-50) μ
m*(50-150)nm。
9. the humidity sensor according to claim 1 based on the huge piezo-resistive arrangement of π type, it is characterised in that：The gold structure
Titanium structural area is equipped between area and the silicon structure area, germanium structural area, for fixed golden structural area, the length of the titanium structural area
With the equal length of the golden structural area.
10. the correction of temperature drift side of -9 described in any item humidity sensors based on the huge piezo-resistive arrangement of π type according to claim 1
Method, it is characterised in that：STM32F407 single-chip microcontroller utilizes Quadratic Surface Fitting function HStandardInfluence of=the f (V, T) to temperature drift carries out
Real-time compensation amendment, the Quadratic Surface Fitting function HStandardThe preparation method of=f (V, T) includes the following steps：
Humidity sensor is put into constant temperature humidity chamber by step 1, and humidity when temperature T=20 is spent is wet as standard
Spend HStandard, the temperature in chamber is then adjusted, adjustable range is -20-60 degree, and step-length is 10 degree, obtains humidity under different temperatures
The output voltage values V (T) of sensor；
Step 2 changes standard humidity HStandard, step 1 is repeated, the humidity sensor under different temperatures and different humidity is obtained
Output voltage values V (HStandard, T), using the output voltage values V of humidity sensor and temperature value T as standard humidity curved surface to be built
Equation HStandardThe input variable of=(V, T), therefore the influence of temperature factor can be taken into account when analyzing humidity；
Step 3, using above-mentioned experiment measurement for constructing surface equation HStandardThe discrete data of=(V, T) carries out quadratic surface
Fitting, and Quadratic Surface Fitting function H is determined using least square methodStandardThe coefficient of independent variable V and T in=f (V, T), thus
Determine Quadratic Surface Fitting function HStandard=f (V, T).
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| CN107607583B (en) * | 2017-08-29 | 2020-08-04 | 广东美的厨房电器制造有限公司 | Humidity detection device |
| CN108318062B (en) * | 2018-03-08 | 2023-10-13 | 云南电网有限责任公司电力科学研究院 | Fiber bragg grating temperature and humidity sensor and temperature and humidity measurement system |
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| CN205826583U (en) * | 2016-07-18 | 2016-12-21 | 南京信息工程大学 | Humidity sensor based on the huge piezo-resistive arrangement of π type |
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