CN105928989A - Phi-shaped huge-piezoresistance structure-based humidity sensor and temperature drift correction method thereof - Google Patents
Phi-shaped huge-piezoresistance structure-based humidity sensor and temperature drift correction method thereof Download PDFInfo
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Abstract
The invention provides phi-shaped huge-piezoresistance structure-based humidity sensor. The humidity sensor comprises four data collectors, a data conversion and integration layer and a filter screen, the four data collectors are distributed on the data conversion and integration layer in two rows, the filter screen is placed in the detection zones of the data collectors, and the data transition and integration layer comprises a four-point resistance measurement circuit, a CS1180 analog-to-digital converter, an STM32F407 one-chip microcomputer and a TFT true color liquid crystal display screen; the four data collectors transmits collected data to the CS1180 analog-to-digital converter through the four-point resistance measurement circuit, the CS1180 analog-to-digital converter converts the data and outputs the converted data to the STM32F407 one-chip microcomputer, the STM32F407 one-chip microcomputer sends the converted data to the TFT true color liquid crystal display screen, and the converted data is displayed on the TFT true color liquid crystal display screen. The invention also provides a temperature drift correction method of the humidity sensor.
Description
Technical field
The present invention relates to a kind of humidity sensor based on the huge piezo-resistive arrangement of π type and correction of temperature drift method thereof, belong to minute mechanical and electrical system sensor technical field.
Background technology
Along with the fast development of MEMS (MEMS) technology since the eighties in last century, increasing MEMS is widely used in the every field such as industrial or agricultural, Aero-Space, weather environment, national defense and military.And succeeding in developing along with devices such as microprobe and miniflow meters in the last few years, large number of MEMS enters the fields such as chemical analysis, air detection and Temperature and Humidity.But, current humidity sensor limits due to this body structure of device, it is impossible to realize the moisture measurement of real-time high-precision, high sensitivity, high reliability.
Traditional humidity sensor uses resistance or capacitive dew cell to detect the water vapor concentration in air mostly, but owing to the change of water and the dielectric constant with temperature of high molecular polymer is nonsynchronous, easily produce temperature drift, it is easily subject to the impact of illumination simultaneously, so being difficulty with high accuracy that small humidity is changed, high-sensitivity measurement.It is thus desirable to impact and muting sensitivity present situation on temperature process.
Summary of the invention
The present invention is to solve drawbacks described above and deficiency present in prior art, provide a kind of humidity sensor based on the huge piezo-resistive arrangement of π type and correction of temperature drift method thereof, the piezoresistance coefficient of this humidity sensor increases with the coefficient of strain equal order of magnitude ground, the highest sensitivity of sensor, can effectively catch humidity change small in air, expand and measure range.
For solving above-mentioned technical problem, the present invention provides a kind of humidity sensor based on the huge piezo-resistive arrangement of π type, including 4 data acquisition units, data Transform Sets stratification and screen pack, 4 described data acquisition units divide two rows to be distributed in data Transform Sets stratification, described screen pack is placed on the detection zone of described data acquisition unit, and described data Transform Sets stratification includes the very color LCDs of four-point resistance measurement circuit, CS1180 analog-digital converter, STM32F407 single-chip microcomputer and TFT；The data collected are passed through four-point resistance measurement amount of circuitry circuit transmission to CS1180 analog-digital converter by 4 data acquisition units, export to STM32F407 single-chip microcomputer after the conversion of CS1180 analog-digital converter, sent to the very color LCDs of TFT by STM32F407 single-chip microcomputer, in the very color liquid crystal display screen display of TFT；
Described data acquisition unit includes substrate, stressor layers, detection zone and the huge piezo-resistive arrangement of π type, described stressor layers is placed in described substrate, described detection zone and the huge piezo-resistive arrangement of π type are distributed in described stressor layers, wherein, detection zone is placed in the center of described stressor layers, and the huge piezo-resistive arrangement of π type is two, and distribution is placed in the both sides of described detection zone and is positioned at described stressor layers edge, two described huge piezo-resistive arrangement of π type are connected by the connecting line of metallic aluminium material, and by a constant current source power supply；The described huge piezo-resistive arrangement of π type includes silicon structure district, germanium structural area and gold structural area, wherein silicon structure district is two sections, distribution is placed in the two ends of described germanium structural area, described gold structural area is placed in described silicon structure district, the same side of germanium structural area, and the length of described gold structural area is equal to Liang Duan silicon structure district and the length sum of germanium structural area, the intersection of described silicon structure district and described germanium structural area is Si-Ge heterojunction, and the intersection in described gold structural area and described silicon structure district, germanium structural area is gold-Si-Ge heterojunction；The opposite side of described germanium structural area is provided with potential monitoring point；The side of the described huge piezo-resistive arrangement of π type is provided with temperature sensor, detects environment temperature in real time.
Further, between described stressor layers and described substrate, it is provided with the solid support structure of monocrystalline silicon material, is used for preventing stressor layers from rupturing because pressure is excessive.
Further, being provided with heater between described stressor layers and described solid support structure, described heater is polysilicon resistance silk.
Further, described data acquisition unit also includes the common-mode signal collocation structure that all huge with the π type piezo-resistive arrangement of two sizes, composition materials is identical, the two ends of detection zone described in two described common-mode signal collocation structures and be positioned at described stressor layers edge, square structure is formed with two described huge piezo-resistive arrangement of π type, described common-mode signal collocation structure is connected by the connecting line of metallic aluminium material with the described huge piezo-resistive arrangement of π type, and by same constant current source power supply.
Further, the U-shaped stress that is provided around of the described huge piezo-resistive arrangement of π type strengthens structure；It is the groove-like structure using RIE lithographic technique to be etched in stressor layers that described stress strengthens structure.
Further, the material of described substrate is glass, and the material of stressor layers is silica, and the material of detection zone is polyimides.
Further, the MUX and filtering and amplifying circuit being sequentially connected it is provided with between described four-point resistance measurement circuit and described CS1180 analog-digital converter；Described filtering and amplifying circuit includes the first order amplifying circuit being made up of resistance R1, R2, R3, R4 and amplifier AD620, the second order RC lowpass filter being made up of resistance R5 and electric capacity C1, resistance R7 and electric capacity C2.
Further, the size of described Si-Ge heterojunction is (60-70) μm * 5 μm * (50-150) nm, and the size of gold-Si-Ge heterojunction is (60-70) μm * (35-50) μm * (50-150) nm.
Further, being provided with titanium structural area between described gold structural area and described silicon structure district, germanium structural area, for fixing gold structural area, the length of described titanium structural area is equal with the length of described gold structural area.
Present invention also offers a kind of correction of temperature drift method of humidity sensor based on the huge piezo-resistive arrangement of π type, it is characterised in that: STM32F407 single-chip microcomputer utilizes Quadratic Surface Fitting function HStandard=f (V, T) carries out real-Time Compensation correction, described Quadratic Surface Fitting function H to the impact that temperature is floatedStandardThe preparation method of=f (V, T) comprises the following steps:
Step one, puts into constant temperature humidity chamber by humidity sensor, determines that humidity when temperature T=20 is spent is as standard humidity HStandard, the then temperature in regulation chamber, adjustable range is-20-60 degree, and step-length is 10 degree, obtains the output voltage values V (T) of humidity sensor under different temperatures；
Step 2, changes standard humidity HStandard, repeat step one, obtain the output voltage values V (H of humidity sensor under different temperatures and different humidityStandard, T), using the output voltage values V and temperature value T of humidity sensor as standard humidity surface equation H to be builtStandardThe input variable of=(V, T), therefore can take into account the impact of temperature factor when analyzing humidity；
Step 3, utilize that above-mentioned experiment measures for building surface equation HStandardThe discrete data of=(V, T) carries out Quadratic Surface Fitting, and uses least square method to determine Quadratic Surface Fitting function HStandardThe coefficient of independent variable V and T in=f (V, T), so that it is determined that Quadratic Surface Fitting function HStandard=f (V, T).
The Advantageous Effects that the present invention is reached: the present invention provides a kind of humidity sensor based on the huge piezo-resistive arrangement of π type, the principle that realizes of this sensor is: after the vapour molecule in environment filters off impurity through screen pack, it is integrated into the optimal high-molecular organic material polyimides of performance to absorb, excellent properties due to polyimides, and the filtration of screen pack, it is capable of Humidity Detection work in the presence of a harsh environment, expands the range of this humidity sensor.The data acquisition unit of this sensor uses and has two Si-Ge heterojunctions and the huge piezo-resistive arrangement of π type of a gold-Si-Ge heterojunction composition simultaneously, and strengthen structure by the stress of RIE etching making around the huge piezo-resistive arrangement of π type, the piezoresistance coefficient that can make humidity sensor all have the order of magnitude with the coefficient of strain increases, it is used in combination by two kinds of hetero-junctions, the huge piezo-resistive arrangement of π type can simultaneously the most transversely with longitudinal amplification stress, under identical stress condition, produce bigger resistance change, fundamentally improve the sensitivity of humidity sensor；Two common-mode signal collocation structures are used to ensure that the pressure sensing structure of this humidity sensor certainty of measurement under complicated external environment；Rupture to prevent stressor layers stress under extreme working position excessive; this humidity sensor is provided with the solid support structure that monocrystalline silicon is constituted below stressor layers; under limit condition of operation, provide protection for stressor layers, make the measurement scope of this humidity sensor and use occasion all be expanded；It addition, this sensor uses four-point resistance measurement method and the amplification of signal, filtering modulate circuit, available signal, the impact on testing result of the extraneous factors such as attenuating noise the most accurately, high accuracy, the effect of stably measured can be reached.Use 4 data acquisition units to average again after obtaining data and can improve certainty of measurement and the stability of system.The correction of temperature drift method of the humidity sensor that the present invention provides can be effectively improved the degree of accuracy of detection, it is to avoid the impact that moisture measurement is produced by temperature.
Accompanying drawing explanation
The data acquisition unit structural representation of Fig. 1 present invention；
The structural representation of the huge piezo-resistive arrangement of π type of Fig. 2 present invention；
The overall structure schematic diagram of Fig. 3 present invention；
The filtering and amplifying circuit figure of Fig. 4 present invention；
The humidity sensor workflow schematic diagram of Fig. 5 present invention；
The humidity sensor correction of temperature drift method schematic diagram of Fig. 6 present invention.
Wherein: 1 substrate；2 detection zones；3 stress strengthen structure；4 stressor layers；The 5 huge piezo-resistive arrangement of π type；6 common-mode signal collocation structures；7 solid support structure；8 silicon structure districts；9 germanium structural areas；10 titanium structural areas；11 gold medal structural areas；12 Si-Ge heterojunctions；13 gold medals-Si-Ge heterojunction；14 heaters；15 temperature sensors；16 potential measurement points；17 data acquisition units；Eighteen data Transform Sets stratification；19 screen packs.
Detailed description of the invention
The invention will be further described below in conjunction with the accompanying drawings.Following example are only used for clearly illustrating technical scheme, and can not limit the scope of the invention with this.
As Figure 1-5, the present invention provides a kind of humidity sensor based on the huge piezo-resistive arrangement of π type, including 4 data acquisition units 17, data Transform Sets stratification 18 and screen pack 19,4 described data acquisition units 17 point of two row be distributed in data Transform Sets stratification 18, described screen pack 19 is placed on the detection zone 2 of described data acquisition unit 17, and described data Transform Sets stratification 18 includes the very color LCDs of four-point resistance measurement circuit, CS1180 analog-digital converter, STM32F407 single-chip microcomputer and TFT；The data collected are passed through four-point resistance measurement amount of circuitry circuit transmission to CS1180 analog-digital converter by 4 data acquisition units, export to STM32F407 single-chip microcomputer after the conversion of CS1180 analog-digital converter, sent to the very color LCDs of TFT by STM32F407 single-chip microcomputer, in the very color liquid crystal display screen display of TFT；
Described data acquisition unit 17 includes substrate 1, stressor layers 4, the detection zone 2 and π huge piezo-resistive arrangement of type 5, described stressor layers 4 is placed in described substrate 1, described the detection zone 2 and π huge piezo-resistive arrangement of type 5 is distributed in described stressor layers 4, wherein, detection zone 2 is placed in the center of described stressor layers 4, the huge piezo-resistive arrangement of π type 5 is two, it is respectively C1, C2, distribution is placed in the both sides of described detection zone 2 and is positioned at described stressor layers 4 edge, two described huge piezo-resistive arrangement of π type 5 are connected by the connecting line of metallic aluminium material, and by a constant current source power supply, constant-current source reduces, while providing stabling current, the measure error caused because of power supply difference；The described huge piezo-resistive arrangement of π type 5 includes silicon structure district 8, germanium structural area 9 and gold structural area 11, wherein silicon structure district 8 is two sections, distribution is placed in the two ends of described germanium structural area 9, described gold structural area 11 is placed in described silicon structure district 8, the same side of germanium structural area 9, and the length of described gold structural area 11 is equal to Liang Duan silicon structure district 8 and the length sum of germanium structural area 9, the intersection of described silicon structure district 8 and described germanium structural area 9 is Si-Ge heterojunction 12, described gold structural area 11 and described silicon structure district 8, the intersection of germanium structural area 9 is gold-Si-Ge heterojunction 13, two of which Si-Ge heterojunction 12 is parallel to each other, and it is vertical with gold-Si-Ge heterojunction 13, thus form π structure, it is referred to as the huge piezo-resistive arrangement of π type 5；The opposite side of described germanium structural area 9 is provided with potential monitoring point 6；The side of the described huge piezo-resistive arrangement of π type 5 is provided with temperature sensor 15, detects environment temperature in real time.
The material of described substrate 1 is glass, and the material of stressor layers 4 is silica, and the material of detection zone 2 is polyimides, it is possible to realize the Humidity Detection under complex environment.
In order to prevent stressor layers 4 from rupturing because pressure is excessive under extreme working position, between described stressor layers 4 and described substrate 1, it is provided with the solid support structure 7 of monocrystalline silicon material, under limit condition of operation, provides protection for stressor layers 4.Being provided with heater 14 between described stressor layers 4 and described solid support structure 7, described heater is polysilicon resistance silk.
The U-shaped stress that is provided around of the described huge piezo-resistive arrangement of π type 5 strengthens structure 3；It is the groove-like structure using RIE lithographic technique to be etched in stressor layers that described stress strengthens structure 3, and stress is more concentrated, and the deformation making STRESS VARIATION produce becomes apparent from.
Described data acquisition unit 17 also includes the common-mode signal collocation structure 6 that all huge with the π type piezo-resistive arrangement of two sizes, composition materials is identical, it is respectively C3, C4, the two ends of detection zone 2 described in two described common-mode signal collocation structures 6 and be positioned at described stressor layers 4 edge, square structure is formed with two described huge piezo-resistive arrangement of π type 5, described common-mode signal collocation structure 6 is connected by the connecting line of metallic aluminium material with the described huge piezo-resistive arrangement of π type 5, and by same constant current source power supply.
Test shows, the size of the huge piezo-resistive arrangement of π type 5 greatly have impact on pressure drag and the coefficient of strain of huge piezo-resistive arrangement, in the present invention, the size of described Si-Ge heterojunction is (60-70) μm * 5 μm * (50-150) nm, and the size of gold-Si-Ge heterojunction is (60-70) μm * (35-50) μm * (50-150) nm.
Being provided with titanium structural area 10 between described gold structural area 11 and described silicon structure district 8, germanium structural area 9, for fixing gold structural area 11, the length of described titanium structural area 10 is equal with the length of described gold structural area 11.
The MUX and filtering and amplifying circuit being sequentially connected it is provided with between described four-point resistance measurement circuit and described CS1180 analog-digital converter；Described filtering and amplifying circuit includes the first order amplifying circuit being made up of resistance R1, R2, R3, R4 and amplifier AD620, the second order RC lowpass filter being made up of resistance R5 and electric capacity C1, resistance R7 and electric capacity C2.
The operation principle of the data acquisition unit 17 that the present invention provides: surface, Humidity Detection district covers a floor screen pack 19, other impurity particles beyond moisture removal in surrounding environment are filtered, only moisture in air is absorbed, after absorbing the moisture in air, π type huge piezo-resistive arrangement 5 mass changes and produces stress, stress strengthens structure by stress and strengthens, enhanced stress further results in π type huge piezo-resistive arrangement 5 surface especially its root area and produces bigger stress, this stress causes the Si-Ge heterojunction 12 of the huge piezo-resistive arrangement of π type 5 and gold-Si-Ge heterojunction 13 to produce huge piezoresistive effect, the most enhanced Stress relief Si-Ge heterojunction 12 and the barrier height of gold-Si-Ge heterojunction 13, there is huge change in the quantity making electronics pass through, so that the great change of the resistance generation order of magnitude.Changed by resistance capacitance relative to conventional moisture sensors and detect humidity change, it is STRESS VARIATION that this humidity sensor first passes through humidity change transitions, then strengthened by stress and use and can produce the huge piezo-resistive arrangement of π type becoming apparent from resistance change under identical stress condition, thus the present invention significantly improves the sensitivity of humidity sensor from sensing arrangement, widen its range ability.
Embodiment
The ga(u)ge factor of traditional body silicon piezo-resistive arrangement is typically between 50-100, and is easily affected by environment temperature.In order to the technique effect of humidity sensor that the present invention provides is described, four-point bending test device is used in-20-60 degree temperature range, the ga(u)ge factor of the huge piezo-resistive arrangement of π type that the present invention proposes to be measured, test result shows: the ga(u)ge factor of the huge piezo-resistive arrangement of π type can reach more than 1000, simultaneously, investigate the change of Si-Ge heterojunction and the gold-Si-Ge heterojunction size impact on ga(u)ge factor, when a length of 5 μm of Si-Ge heterojunction, ga(u)ge factor order of magnitude great change, can reach 3000.It addition, the strain sensitivity impact also ratio of temperature piezo-resistive arrangement huge on π type is more significant, temperature drift error has reached 3%FS-5%FS.
Circumstance complication residing for moisture measurement, environment temperature is not constant between, and humidity sensor is by semi-conducting material manufacturing, so being highly prone to the impact of temperature.Sensor moisture measurement can be brought no small error in view of environment temperature, therefore, the invention provides a kind of correction of temperature drift method of humidity sensor based on the huge piezo-resistive arrangement of π type, the method is: STM32F407 single-chip microcomputer utilizes Quadratic Surface Fitting function HStandard=f (V, T) carries out real-Time Compensation correction, described Quadratic Surface Fitting function H to the impact that temperature is floatedStandardThe preparation method of=f (V, T) comprises the following steps:
Step one, puts into constant temperature humidity chamber by humidity sensor, determines that humidity when temperature T=20 is spent is as standard humidity HStandard, the then temperature in regulation chamber, adjustable range is-20-60 degree, and step-length is 10 degree, obtains the output voltage values V (T) of humidity sensor under different temperatures；
Step 2, changes standard humidity HStandard, repeat step one, obtain the output voltage values V (H of humidity sensor under different temperatures and different humidityStandard, T), using the output voltage values V and temperature value T of humidity sensor as standard humidity surface equation H to be builtStandardThe input variable of=(V, T), therefore can take into account the impact of temperature factor when analyzing humidity；
Step 3, as shown in Figure 6, utilize that above-mentioned experiment measures for building HStandardThe discrete data of=(V, T) surface equation carries out Quadratic Surface Fitting, and uses least square method to determine Quadratic Surface Fitting function HStandardThe coefficient of independent variable V and T in=f (V, T), so that it is determined that Quadratic Surface Fitting function HStandard=f (V, T).Use least square method to determine the coefficient of Quadratic Surface Fitting function, employing Quadratic Surface Fitting function H can be madeStandardHumidity value that=f (V, T) calculates and standard humidity value HStandardBetween error minimum.
This Quadratic Surface Fitting function HStandard=f (V, T) be sensor by the surface fitting mathematical forecasting model between measuring moisture, environment temperature and output voltage, tested humidity value can be calculated after obtaining sensor output voltage and environment temperature easily.This Quadratic Surface Fitting function HStandard=f (V, T) contains temperature T, removes temperature drift impact by setting up the Nonlinear Mapping relation between temperature and humidity, it is achieved temperature-compensating.This Quadratic Surface Fitting function is transplanted to STM32 single-chip microcomputer and can carry out real time temperature drift compensation correction.
The above is only the preferred embodiment of the present invention; it should be pointed out that, for those skilled in the art, on the premise of without departing from the technology of the present invention principle; can also make some improvement and deformation, these improve and deformation also should be regarded as protection scope of the present invention.
Claims (10)
1. humidity sensor based on the huge piezo-resistive arrangement of π type, it is characterised in that: include 4 numbers
According to collector, data Transform Sets stratification and screen pack, 4 described data acquisition units divide two rows to divide
Cloth is in data Transform Sets stratification, and described screen pack is placed in the detection zone of described data acquisition unit
On, described data Transform Sets stratification includes four-point resistance measurement circuit, CS1180 analog-to-digital conversion
The very color LCDs of device, STM32F407 single-chip microcomputer and TFT；4 data acquisition units will
The data collected pass through four-point resistance measurement amount of circuitry circuit transmission to CS1180 analog-to-digital conversion
Device, exports to STM32F407 single-chip microcomputer after the conversion of CS1180 analog-digital converter, by
STM32F407 single-chip microcomputer sends to the very color LCDs of TFT, in the very color liquid crystal of TFT
Show screen display；
Described data acquisition unit includes substrate, stressor layers, detection zone and the huge piezo-resistive arrangement of π type,
Described stressor layers is placed in described substrate, and described detection zone and the huge piezo-resistive arrangement of π type are distributed in institute
Stating in stressor layers, wherein, detection zone is placed in the center of described stressor layers, the huge piezo-resistive arrangement of π type
Being two, distribution is placed in the both sides of described detection zone and is positioned at described stressor layers edge, two
The described huge piezo-resistive arrangement of π type is connected by the connecting line of metallic aluminium material, and by a constant-current source
Power supply；The described huge piezo-resistive arrangement of π type includes silicon structure district, germanium structural area and gold structural area, its
Middle silicon structure district is two sections, and distribution is placed in the two ends of described germanium structural area, and described gold structural area is put
In described silicon structure district, the same side of germanium structural area, and the length of described gold structural area is equal to two
Section silicon structure district and the length sum of germanium structural area, described silicon structure district and described germanium structural area
Intersection is Si-Ge heterojunction, described gold structural area and described silicon structure district, germanium structural area
Intersection is gold-Si-Ge heterojunction；The opposite side of described germanium structural area is provided with potential monitoring point；
The side of the described huge piezo-resistive arrangement of π type is provided with temperature sensor, for detection environment temperature in real time
Degree.
Humidity sensor based on the huge piezo-resistive arrangement of π type the most according to claim 1, its
It is characterised by: between described stressor layers and described substrate, be provided with the solid support knot of monocrystalline silicon material
Structure, is used for preventing stressor layers from rupturing because pressure is excessive.
Humidity sensor based on the huge piezo-resistive arrangement of π type the most according to claim 2, its
It is characterised by: between described stressor layers and described solid support structure, be provided with heater, described
Heater is polysilicon resistance silk.
Humidity sensor based on the huge piezo-resistive arrangement of π type the most according to claim 1, its
It is characterised by: described data acquisition unit also includes all huge with the π type pressure of two sizes, composition materials
Hinder the common-mode signal collocation structure that structure is identical, examine described in two described common-mode signal collocation structures
Survey the two ends in district and be positioned at described stressor layers edge, with two described π type huge piezo-resistive arrangement shapes
Squarely structure, described common-mode signal collocation structure and the described huge piezo-resistive arrangement of π type pass through metal
The connecting line series connection of aluminium material, and by same constant current source power supply.
Humidity sensor based on the huge piezo-resistive arrangement of π type the most according to claim 1, its
It is characterised by: the U-shaped stress that is provided around of the described huge piezo-resistive arrangement of π type strengthens structure；Institute
State stress strengthening structure is the groove-like structure using RIE lithographic technique to be etched in stressor layers.
Humidity sensor based on the huge piezo-resistive arrangement of π type the most according to claim 1, its
Being characterised by: the material of described substrate is glass, the material of stressor layers is silica, detection
The material in district is polyimides.
Humidity sensor based on the huge piezo-resistive arrangement of π type the most according to claim 1, its
It is characterised by: between described four-point resistance measurement circuit and described CS1180 analog-digital converter
It is provided with the MUX and filtering and amplifying circuit being sequentially connected；Described filtering and amplifying circuit includes
The first order amplifying circuit being made up of resistance R1, R2, R3, R4 and amplifier AD620,
The second order RC lowpass ripple being made up of resistance R5 and electric capacity C1, resistance R7 and electric capacity C2
Device.
Humidity sensor based on the huge piezo-resistive arrangement of π type the most according to claim 1, its
It is characterised by: the size of described Si-Ge heterojunction is (60-70) μm * 5 μm * (50-150) nm,
The size of gold-Si-Ge heterojunction is (60-70) μm * (35-50) μm * (50-150) nm.
Humidity sensor based on the huge piezo-resistive arrangement of π type the most according to claim 1, its
It is characterised by: between described gold structural area and described silicon structure district, germanium structural area, be provided with titanium structure
District, for fixing gold structural area, the length of described titanium structural area and the length of described gold structural area
Equal.
10. pass according to the humidity based on the huge piezo-resistive arrangement of π type described in any one of claim 1-9
The correction of temperature drift method of sensor, it is characterised in that: STM32F407 single-chip microcomputer utilizes secondary bent
Face fitting function HStandard=f (V, T) carries out real-Time Compensation correction to the impact that temperature is floated, and described two
Secondary surface fitting function HStandardThe preparation method of=f (V, T) comprises the following steps:
Step one, puts into constant temperature humidity chamber by humidity sensor, determines temperature T=20
Humidity when spending is as standard humidity HStandard, then the temperature in regulation chamber, regulates model
Enclosing for-20-60 degree, step-length is 10 degree, obtains the output electricity of humidity sensor under different temperatures
Pressure value V (T)；
Step 2, changes standard humidity HStandard, repeat step one, obtain different temperatures and difference
Output voltage values V (the H of the humidity sensor under humidityStandard, T), defeated by humidity sensor
Go out magnitude of voltage V and temperature value T as standard humidity surface equation H to be builtStandard=(V,
T) input variable, therefore can take into account the impact of temperature factor when analyzing humidity；
Step 3, utilize that above-mentioned experiment measures for building surface equation HStandard=(V, T's)
Discrete data carries out Quadratic Surface Fitting, and uses least square method to determine Quadratic Surface Fitting
Function HStandardThe coefficient of independent variable V and T in=f (V, T), so that it is determined that Quadratic Surface Fitting
Function HStandard=f (V, T).
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107607583A (en) * | 2017-08-29 | 2018-01-19 | 广东美的厨房电器制造有限公司 | Humidity detector |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107607583A (en) * | 2017-08-29 | 2018-01-19 | 广东美的厨房电器制造有限公司 | Humidity detector |
| CN107607583B (en) * | 2017-08-29 | 2020-08-04 | 广东美的厨房电器制造有限公司 | Humidity detection device |
| CN108318062A (en) * | 2018-03-08 | 2018-07-24 | 云南电网有限责任公司电力科学研究院 | A kind of fiber grating Temperature Humidity Sensor and temperature/humidity measuring system |
| CN108318062B (en) * | 2018-03-08 | 2023-10-13 | 云南电网有限责任公司电力科学研究院 | Fiber bragg grating temperature and humidity sensor and temperature and humidity measurement system |
| CN112393758A (en) * | 2020-09-08 | 2021-02-23 | 浙江中广电器股份有限公司 | Screening method of temperature and humidity sensor for air energy heat pump type dryer |
| CN112393758B (en) * | 2020-09-08 | 2022-03-25 | 浙江中广电器股份有限公司 | Screening method of temperature and humidity sensor for air energy heat pump type dryer |
| CN113428829A (en) * | 2021-08-26 | 2021-09-24 | 南京高华科技股份有限公司 | MEMS (micro-electromechanical system) wet-pressing integrated sensor and preparation method thereof |
| CN113428829B (en) * | 2021-08-26 | 2021-11-16 | 南京高华科技股份有限公司 | MEMS (micro-electromechanical system) wet-pressing integrated sensor and preparation method thereof |
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