JPH0321849A - Semiconductor humidity sensor - Google Patents
Semiconductor humidity sensorInfo
- Publication number
- JPH0321849A JPH0321849A JP15738389A JP15738389A JPH0321849A JP H0321849 A JPH0321849 A JP H0321849A JP 15738389 A JP15738389 A JP 15738389A JP 15738389 A JP15738389 A JP 15738389A JP H0321849 A JPH0321849 A JP H0321849A
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- humidity
- sensing body
- side wall
- humidity sensing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract description 7
- 229920000642 polymer Polymers 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000008188 pellet Substances 0.000 abstract description 9
- 239000007788 liquid Substances 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 230000008602 contraction Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は、感湿体の湿度による体積変化を利用した湿度
センサに関する。DETAILED DESCRIPTION OF THE INVENTION (A) Field of Industrial Application The present invention relates to a humidity sensor that utilizes volume changes due to humidity of a humidity sensitive element.
（ロ）従来の技術
従来、湿度センサとしては、高分子（以下ポリマーとい
う）やセラミック等の雰囲気湿度により抵抗，容量等の
電気的性質が変わることを利用したものが知られている
。しかし、これらの湿度センサは検出部を常に測定雰囲
気中にさらして使用するため、汚染等により電気的性質
の変化が避けがたく、長期安定性に欠ける。これに対し
、特開昭５６−４２１２６号公報に開示された毛髪やナ
イロンのような感湿体を用いた湿度計は、感湿体の伸縮
という機械的な性質を利用するため、上記電気的性質を
利用するものに比べて長期の安定性がある。しかし、こ
れまでこの感湿体の伸縮を容易に電気信号に変換し難く
、湿度センサ化されていなかった。(b) Prior Art Conventionally, humidity sensors that utilize the fact that electrical properties such as resistance and capacitance of polymers (hereinafter referred to as polymers) and ceramics change depending on the atmospheric humidity are known. However, since these humidity sensors are used with the detection section constantly exposed to the measurement atmosphere, changes in electrical properties due to contamination or the like are unavoidable, resulting in a lack of long-term stability. On the other hand, the hygrometer that uses a moisture sensitive material such as hair or nylon disclosed in Japanese Patent Application Laid-Open No. 56-42126 utilizes the mechanical property of expansion and contraction of the moisture sensitive material, so the above-mentioned electrical It has long-term stability compared to those that utilize properties. However, until now, it has been difficult to easily convert the expansion and contraction of this moisture sensitive element into an electrical signal, and it has not been used as a humidity sensor.
一方、本発明者らは実願昭６０−１２０６６５，特願昭
６１−２４５８８９で示したごとく感湿材の伸縮を半導
体のピエゾ抵抗効果を用いて検出する湿度センサを提案
している。On the other hand, the present inventors have proposed a humidity sensor that detects the expansion and contraction of a moisture-sensitive material by using the piezoresistance effect of a semiconductor, as shown in Utility Model Application No. 120665/1982 and Japanese Patent Application No. 61-245889.
（ハ）発明が解決しようとする課題
前記感湿材の伸縮を利用する湿度センサは、感湿材が薄
膜化されており湿度による伸縮が面内方向のみであるた
め該感湿膜が被着されているシリコンダイアフラムを大
きく変形させることはできず、ピエゾ抵抗の抵抗変化が
小さく検出される出力電圧が小さいという課題があった
。(c) Problems to be Solved by the Invention In the humidity sensor that utilizes the expansion and contraction of the moisture-sensitive material, the moisture-sensitive material is made into a thin film and expands and contracts due to humidity only in the in-plane direction. It is not possible to significantly deform the silicon diaphragm used in the piezoresistive device, and the resistance change of the piezoresistor is small, resulting in a small detected output voltage.
（二）課題を解決するための手段
シリコンベレットをエッチング加工してダイアフラム構
造とし、このダイアフラム部と側壁間に感湿体を被着し
湿度による体積変化でダイアプラムを変形させ、この変
形をダイアフラム上に形戊されたピエゾ抵抗体の抵抗変
化として検出する。(2) Means for solving the problem A silicon pellet is etched to form a diaphragm structure, a moisture sensitive material is attached between the diaphragm part and the side wall, the diaphragm is deformed by volume change due to humidity, and this deformation is applied to the diaphragm. It is detected as a change in resistance of a piezoresistor shaped like this.
（ホ）作 用
本発明によれば、雰囲気湿度が変化すると感湿体は膨張
，収縮の体積変化を生じる。この時、感温体はダイアフ
ラム側壁にも十分被着されており、ダイアフラムの受感
部はこの側壁を基準に感湿体に引っ張られたり押された
りするので、ダイアフラム面に垂直な応力を大きく受け
ることになり大きな変形を生じる。このダイアフラムの
変形によりビエゾ抵抗領域の抵抗変化も大きくなり大き
な出力変化を得ることができる。(E) Function According to the present invention, when the atmospheric humidity changes, the moisture sensitive body undergoes volumetric changes such as expansion and contraction. At this time, the temperature sensing element is fully adhered to the side wall of the diaphragm, and the sensing part of the diaphragm is pulled or pushed by the moisture sensing element based on this side wall, so it increases the stress perpendicular to the diaphragm surface. This causes a large deformation. This deformation of the diaphragm also increases the resistance change in the viesoresistive region, making it possible to obtain a large output change.
（へ）実施例
第１図は本発明の一実施例の平面図で、第２図は第１図
のａ−ｂ部分の断面図である。（１）はシフコン単結晶
からなる半導体ペレット，（２）は半導体ベレット（１
）をエッチング加工して設けたダイアプラム．（３），
（４）．（５），（６）はダイアプラム部（２）表面に
形威されたビエゾ抵抗体である。（７）は液状高分子で
本実施例では紫外線硬化樹脂（以下，ＵＶレジンという
）を用いた。このＵＶレジンをディスベンサー等により
一定量ダイアプラム裏面に滴下すると、表面張力により
第２図のように広がる。ＵＶレジン（７）の硬化は乾燥
状態で行われるが、この硬化の際に（本実施例で用いた
ものは約１９％）体積収縮があり、ＵＶレジン（７）は
ダイアフラムの測壁（８）にも被着していることから、
その形状は第３図のようになる。また、雰囲気湿度が高
くなると、ＵＶレジン（７）は吸湿しその体積が膨張す
るので、ダイアフラム（２）は第４図のような形状に変
わる。．この様に雰囲気湿度によりＵＶレジン（７）の
体積が変わることに対応してダイアフラム（２）の変形
状態が変わり、これに伴う応力変化でビエゾ抵抗（３
）（４ ）（５ ）（６）の抵抗値も変化する。(F) Embodiment FIG. 1 is a plan view of an embodiment of the present invention, and FIG. 2 is a sectional view taken along line a-b in FIG. 1. (1) is a semiconductor pellet made of Schifcon single crystal, (2) is a semiconductor pellet (1
) is etched into the diaphragm. (3),
(4). (5) and (6) are viezo resistors formed on the surface of the diaphragm part (2). (7) is a liquid polymer, and in this example, an ultraviolet curing resin (hereinafter referred to as UV resin) was used. When a certain amount of this UV resin is dropped onto the back surface of the diaphragm using a dispenser or the like, it spreads as shown in FIG. 2 due to surface tension. The curing of the UV resin (7) is carried out in a dry state, but during this curing there is volumetric shrinkage (approximately 19% for the resin used in this example), and the UV resin (7) ) because it is also attached to
Its shape is as shown in Figure 3. Furthermore, when the atmospheric humidity increases, the UV resin (7) absorbs moisture and expands in volume, so the diaphragm (2) changes into the shape shown in FIG. 4. ．． In this way, the deformation state of the diaphragm (2) changes in response to the change in the volume of the UV resin (7) depending on the atmospheric humidity, and the accompanying stress change causes the Viesor resistance (3
)(4)(5)(6) resistance values also change.
第５図は、本発明者らが実願昭５６−４２１２６等で示
した感湿材の薄膜を用いた構造の湿度センサの断面図で
ある。温度変化に応じて感湿膜（７）は伸縮するが、薄
膜であるため面内の２次元的な応力が主となる。この感
湿膜（７）はダイアフラム（２）に被着されているため
、感湿膜（７）の２次元的な応力で結果的にダイアフラ
ムは３次元的に変形するが、その変形量は小さい。これ
に対し本発明では、固定された側壁をベースにダイアプ
ラム受感部に垂直な応力を加えるので、大きなダイアプ
ラムの変形を得ることができる。その応力がダイアフラ
ム（２）に加えられるが、この時の応力は２次元的に加
わるだけで、第３図，第４図に示した様なダイアプラム
変形は伴わない。これに対し本発明では上記のごとくダ
イアフラムの垂直方向（３次元的）な応力が働くのでダ
イアプラムの大きな変形が生じる。FIG. 5 is a cross-sectional view of a humidity sensor having a structure using a thin film of a moisture-sensitive material, as disclosed by the present inventors in U.S. Patent Application No. 56-42126. The moisture sensitive film (7) expands and contracts in response to temperature changes, but since it is a thin film, in-plane two-dimensional stress mainly occurs. Since this moisture-sensitive film (7) is attached to the diaphragm (2), the diaphragm is deformed three-dimensionally due to the two-dimensional stress of the moisture-sensitive film (7), but the amount of deformation is small. In contrast, in the present invention, since vertical stress is applied to the diaphragm sensing portion based on the fixed side wall, a large deformation of the diaphragm can be obtained. The stress is applied to the diaphragm (2), but the stress at this time is only applied two-dimensionally, and the diaphragm is not deformed as shown in FIGS. 3 and 4. On the other hand, in the present invention, as mentioned above, stress acts in the vertical direction (three-dimensional) of the diaphragm, so that the diaphragm undergoes large deformation.
第６図は、ビエゾ抵抗領域（３）．（４）．（５）．（
６）の抵抗変化を電圧変化として検出するためのホイー
トストンブリッジで、定電流源（９）を用いて１ｍＡの
定電流をブリッジに流し、出力電圧Ｖｏ ｕ ｔ （１
０）を検出するものである。この電圧ＶＯｕ−ｔ （１
０）は次式で計算される。Figure 6 shows the viezoresistance region (3). (4). (5). (
6) is a Wheatstone bridge for detecting the resistance change as a voltage change, a constant current source (9) is used to flow a constant current of 1 mA through the bridge, and the output voltage Vo ut (1
0). This voltage VOut (1
0) is calculated using the following formula.
感湿体を被着しない状態においては、４個の抵抗値はほ
ぼ等しいのでＶｏｕｔ＋’＝０となる。表１に本実施例
に基づいて試作したセンサの各ピエゾ抵抗（３）．（４
），（５）．（６）の低湿３０〜４０％ＲＨ，高温９０
〜１００％ＲＨ雰囲気中での抵抗値と式（１）より計算
されるＶｏｕｔの値を示した。In a state where no moisture sensitive body is attached, the resistance values of the four pieces are almost equal, so Vout+'=0. Table 1 shows each piezoresistor (3) of the sensor prototyped based on this example. (4
), (5). (6) Low humidity 30-40%RH, high temperature 90%
The resistance value in an atmosphere of ~100% RH and the value of Vout calculated from equation (1) are shown.
以下余白
表
ｌ
こｆ Ｖ ｏ ｕ ｔ （１０）の値は実際に第５図の
ようにブ｝ノジ接続して検出される電圧値ともほぼ等し
いことを確認している。また、ペレ７ト（１）に感湿体
（７）そ被着しない状態でダイアフラム部に圧力を印加
して第３図及び第４図の様なダイアプラムの変形状態を
つくり、その時の各ピエゾ抵抗値の変化全測定すること
で、感湿体（７）の膨張、収縮による体積変化で第３図
、第４図のようにダイアフラムが変形していることを確
認している。It has been confirmed that the value of V out (10) is almost the same as the voltage value detected by making the connection as shown in FIG. 5. In addition, pressure was applied to the diaphragm part with the moisture sensitive element (7) not attached to the pellet (1) to create a deformed state of the diaphragm as shown in Figs. 3 and 4, and each piezo at that time was By measuring all changes in resistance value, it was confirmed that the diaphragm was deformed as shown in FIGS. 3 and 4 due to volume changes due to expansion and contraction of the moisture sensitive element (7).
分流式湿度発生装置を用いて本実施例で試作したセンサ
の感湿特性を第７図に示す。FIG. 7 shows the humidity sensitivity characteristics of the sensor prototyped in this example using the split-flow humidity generator.
〈ト）発明の効果
本発明によれば、感湿体の膨張、収縮による体積変化と
いう機械的性質を利用するので、電気的性質などに比べ
て測定雰囲気からの汚染等による経時変化が少なく、長
期安定な湿度センサが可能である。(G) Effects of the Invention According to the present invention, since the mechanical property of the volume change due to expansion and contraction of the moisture sensitive element is utilized, there is less change over time due to contamination from the measurement atmosphere compared to electrical properties etc. A long-term stable humidity sensor is possible.
また、ダイアプラム側壁を受感部に感湿体を被着しその
体積変化を利用するのでダイアフラムを大きく変形する
ことができ、出力電圧も大きくとｈ ｓ ，．，’Ｘ比
等も改善させる。In addition, since a moisture sensitive element is attached to the sensing portion of the side wall of the diaphragm and its volume change is utilized, the diaphragm can be greatly deformed, and the output voltage can also be increased by h s , . , 'X ratio etc. are also improved.
さらに、前述の従来タイプのものに比べて感湿体をシリ
コンベレットに被着する方法が容易であるという製作，
Ｅの利点もある。Furthermore, compared to the conventional type mentioned above, the method of attaching the moisture sensitive element to the silicone pellet is easier.
There are also advantages to E.
第１図は本発明の実施例を示すシリコンペレットの平面
図、第２図は第１図におけるａ−ｂ断面図、ＷＳ３図は
感湿体が収縮したときの断面図、第４図は感湿体が膨潤
した時の断面図、第５図は従来夕・ｆブの湿度センサー
の断面図、第６図はホｆ−｝ストンブリッジ回路、第７
図は本発明による試作センサの感湿特性図である。
（１）・・・半導体ペレット、（２〉・・・ダイアフラ
ム、（３ ）（４ ）（５ ）（６ ）・・・ビエゾ抵
抗体、（７）・・・感湿体第２図
６
７
第３図
第４図
７
４度 （％ＲＨ）Fig. 1 is a plan view of a silicon pellet showing an embodiment of the present invention, Fig. 2 is a sectional view taken along line a-b in Fig. 1, Fig. WS3 is a sectional view of the moisture sensitive body when it is contracted, and Fig. 4 is a sectional view of the moisture sensitive body when it is contracted. A cross-sectional view when a wet body swells. Figure 5 is a cross-sectional view of a conventional humidity sensor. Figure 6 is a stone bridge circuit.
The figure is a diagram showing moisture sensitivity characteristics of a prototype sensor according to the present invention. (1)...Semiconductor pellet, (2>...Diaphragm, (3) (4) (5) (6)...Viezo resistor, (7)...Moisture sensitive element Fig. 2 6 7 Figure 3 Figure 4 Figure 7 4 degrees (%RH)
Claims (1)
マ等感湿体の湿度による体積変化で、該ダイアフラムに
垂直な方向の応力を加えることでダイアフラムを変形さ
せ、該ダイアフラム表面に設けられているピエゾ抵抗領
域の抵抗変化を検出することで、雰囲気湿度を検出する
湿度センサ。The diaphragm is deformed by applying stress in the direction perpendicular to the diaphragm due to the volume change due to humidity of a moisture-sensitive material such as a polymer attached between the back surface and the side wall of the silicon diaphragm. A humidity sensor that detects atmospheric humidity by detecting resistance changes in a resistance area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15738389A JP2654184B2 (en) | 1989-06-20 | 1989-06-20 | Semiconductor humidity sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15738389A JP2654184B2 (en) | 1989-06-20 | 1989-06-20 | Semiconductor humidity sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0321849A true JPH0321849A (en) | 1991-01-30 |
| JP2654184B2 JP2654184B2 (en) | 1997-09-17 |
Family
ID=15648448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15738389A Expired - Fee Related JP2654184B2 (en) | 1989-06-20 | 1989-06-20 | Semiconductor humidity sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2654184B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5482678A (en) * | 1993-05-25 | 1996-01-09 | Rosemount Inc. | Organic chemical sensor |
| CN104332562A (en) * | 2014-08-20 | 2015-02-04 | 京东方科技集团股份有限公司 | Electronic packaging device, and preparation method and packaging effect detection method thereof |
| CN105928989A (en) * | 2016-07-18 | 2016-09-07 | 南京信息工程大学 | Phi-shaped huge-piezoresistance structure-based humidity sensor and temperature drift correction method thereof |
| US9636609B2 (en) | 2008-07-25 | 2017-05-02 | Smith & Nephew Plc | Controller for an acoustic standing wave generation device in order to prevent clogging of a filter |
| US9882133B2 (en) | 2014-08-20 | 2018-01-30 | Boe Technology Group Co., Ltd. | Electronic package device for testing a package effect of the device, fabrication method thereof and method for testing electronic package device |
-
1989
- 1989-06-20 JP JP15738389A patent/JP2654184B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5482678A (en) * | 1993-05-25 | 1996-01-09 | Rosemount Inc. | Organic chemical sensor |
| US9636609B2 (en) | 2008-07-25 | 2017-05-02 | Smith & Nephew Plc | Controller for an acoustic standing wave generation device in order to prevent clogging of a filter |
| CN104332562A (en) * | 2014-08-20 | 2015-02-04 | 京东方科技集团股份有限公司 | Electronic packaging device, and preparation method and packaging effect detection method thereof |
| WO2016026203A1 (en) * | 2014-08-20 | 2016-02-25 | 京东方科技集团股份有限公司 | Electronic packaging device, and manufacturing method and packaging effect detection method therefor |
| US9882133B2 (en) | 2014-08-20 | 2018-01-30 | Boe Technology Group Co., Ltd. | Electronic package device for testing a package effect of the device, fabrication method thereof and method for testing electronic package device |
| CN105928989A (en) * | 2016-07-18 | 2016-09-07 | 南京信息工程大学 | Phi-shaped huge-piezoresistance structure-based humidity sensor and temperature drift correction method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2654184B2 (en) | 1997-09-17 |
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| Date | Code | Title | Description |
|---|---|---|---|
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