CN106124542A - A kind of Multifunctional X-ray direction finder and method - Google Patents
A kind of Multifunctional X-ray direction finder and method Download PDFInfo
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- CN106124542A CN106124542A CN201610580470.9A CN201610580470A CN106124542A CN 106124542 A CN106124542 A CN 106124542A CN 201610580470 A CN201610580470 A CN 201610580470A CN 106124542 A CN106124542 A CN 106124542A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/20008—Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
- G01N23/20025—Sample holders or supports therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
- G01N2223/056—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/10—Different kinds of radiation or particles
- G01N2223/101—Different kinds of radiation or particles electromagnetic radiation
- G01N2223/1016—X-ray
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/30—Accessories, mechanical or electrical features
- G01N2223/306—Accessories, mechanical or electrical features computer control
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/30—Accessories, mechanical or electrical features
- G01N2223/309—Accessories, mechanical or electrical features support of sample holder
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/50—Detectors
- G01N2223/505—Detectors scintillation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/604—Specific applications or type of materials monocrystal
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/646—Specific applications or type of materials flaws, defects
Abstract
A kind of Multifunctional X-ray direction finder and method, belong to monocrystal material manufacture field；Multifunctional X-ray direction finder includes: workbench, radiation protection hood, X-ray generation system, diffracted ray receive system, crystal prototype turntable and computer control system；Sample mounting table in crystal prototype turntable can be replaced by demounting bolt；Method includes: utilize Multifunctional X-ray direction finder to carry out crystal defect identification, different crystal characteristic measurement, manual orientation mensuration and the method obtaining angular error；The present invention integrates multiple monocrystal X-ray orientation device and measures system, reduces equipment cost, it is ensured that homogeneity of product；The data detecting each monocrystal material carry out merging arrangement, and intelligence obtains the defect type of monocrystal material, improves the utilization ratio of data with existing；Using scintillation detector as X-ray detector, degree of stability is higher, and capacity of resisting disturbance is strong, compensate for the deficiency of Geiger tube.
Description
Technical field
The invention belongs to monocrystal material manufacture field, be specifically related to a kind of Multifunctional X-ray direction finder and method.
Background technology
Using X-ray diffraction technology that monocrystal material carries out Non-Destructive Testing is industrial a kind of conventional technological means, logical
Cross the single-crystal wafer diffraction to X-ray, the characteristic curve of wafer to be measured can be obtained, just can analyze based on this feature curve
Qualitative characteristics parameter to wafer to be measured.
The X-ray orientation device being presently used for each monocrystal material Non-Destructive Testing is the most independent, presents " machine is a piece of " existing
As, automation equipment level is the highest, and how the problems demand of intelligent decision monocrystal material defect type solves；Each monocrystal material is examined
The data surveyed are separate, are not set up mutually using for reference, reference, along with the development of Data fusion technique, by certain monocrystalline material
The related data of material speculates that another kind of monocrystal material correlated characteristic also should be brought into schedule.X-ray detector receives signal ratio at present
More weak, clutter is more, and along with the raising of equipment precision requirement, the degree of stability of X-ray detector is in urgent need to be improved.
Summary of the invention
The deficiency existed for prior art, the invention provides a kind of Multifunctional X-ray direction finder and method.
Technical scheme:
A kind of Multifunctional X-ray direction finder, including:
Workbench, radiation protection hood, X-ray generation system, diffracted ray receive system, crystal prototype turntable and calculating
Machine control system；
Described workbench is arranged over radiation protection hood；
Described X-ray generation system includes: X-ray high voltage power supply, x ray generator support, x ray generator and list
Color device, X-ray high voltage power supply is arranged on below workbench, and is connected with x ray generator, and x ray generator passes through X-ray
Generator support is fixing on the table, and monochromator is fixed on x ray generator, makes x ray generator send roentgenization
On monochromator, and the X-ray filtered through monochromator can be radiated at the center of wafer to be measured on sample wafer turntable；
Described diffracted ray receives system and includes scintillation detector, scintillation detector support and Signal-regulated kinase, is used for connecing
The scintillation detector of the X-ray receiving wafer diffraction to be measured is fixing on the table by scintillation detector support, scintillation detector
Being connected with Signal-regulated kinase, Signal-regulated kinase is positioned over below workbench；
Described crystal prototype turntable includes that motor, driving device for step-by-step, rotary shaft, handwheel, sample are placed
Platform, air exhauster and bolt, motor and driving device for step-by-step are arranged at below workbench, driving device for step-by-step with
Motor is connected, and motor is connected with sample mounting table by rotary shaft, and handwheel is connected with rotary shaft, and sample mounting table leads to
Crossing and be bolted in rotary shaft, air exhauster is connected with sample mounting table；
Described computer control system includes sampler, PLC control module, industrial PC, the sampling end of sampler with
Signal-regulated kinase is connected, and the outfan of sampler is connected with PLC control module input, PLC control module outfan
Being connected with driving device for step-by-step, industrial PC is connected with PLC control module.
Described sample mounting table includes stand and pore wall, and stand is bolted in rotary shaft, sample mounting table
Can be replaced by demounting bolt, the pore in pore wall is connected with air exhauster, and pore wall is with the wafer shape to be measured held
Identical.
Described sample mounting table stand and pore wall angle are to be provided with pitch adjustment bolt between 90 ° or stand and pore wall,
Between stand and pore wall, angle is adjustable.
Carry out crystal defect according to Multifunctional X-ray direction finder and know method for distinguishing, comprise the steps:
Step 1: wafer to be measured is placed on sample mounting table；
Step 2:X ray generator launches X-ray；
Step 3: scintillation detector gathers the X-ray of wafer diffraction to be measured, and the intensity-conversion of X-ray is become pulse frequency
After signal, it is sent to Signal-regulated kinase；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by Signal-regulated kinase, goes forward side by side
After line frequency pressure conversion process, it is sent to sampler；
Step 5: the voltage analog that the Signal-regulated kinase received exports is converted into digital quantity i.e. peak shape by sampler
Data, are sent to PLC control module；
Step 6: set the title of crystal to be measured, this measuring surface of crystal to be measured, crystal to be measured by industrial PC
Theoretical peak angle and this scanning angle scope measured, and be sent to PLC control module；
Step 7:PLC control module drives sample mounting table to rotate by driving device for step-by-step, and meanwhile, PLC controls
The peak shape data that the sampler received sends are sent to industrial PC by module；
Step 8: if wafer to be measured is unknown crystal, then perform step 9, otherwise, perform step 10；
Step 9: industrial PC calculate in every kind of crystal knowledge base defect sample with crystal to be measured mate defect sample,
And coupling defect sample is carried out data fusion, obtain the knowledge base defect sample of this crystal to be measured；Described every kind of crystal knowledge
Storehouse comprises the peak shape data i.e. defect sample of the different defect types of this kind of crystal；
Step 9-1: extract i-th kind of crystal knowledge base defect sample and constitute initial matrix with wafer peak shape data to be measured；
Step 9-2: use fuzzy cluster analysis to obtain fuzzy equivalent matrix initial matrix:
Step 9-3: obtain in crystal knowledge base defect sample the peak shape data with crystal to be measured according to fuzzy equivalent matrix
The defect sample that similarity is the highest, obtains the coupling defect sample of crystal to be measured and i-th kind of crystal, i.e. target class；
Step 9-4: repeat above procedure, until defect sample in the knowledge base of all kind of crystalline is mated,
Target class to crystal to be measured Yu all kind of crystalline；
Step 9-5: build target class matrix by the target class obtained, element in target class matrix is carried out brief inference,
And calculate belief function；
Step 9-6: according to DS evidence fusion rule, belief function is carried out data fusion, the basic belief function after fusion
Bel is:
Bel=(M1,M2,…,Mj..., Mn)
Wherein, MjTrust probability for jth target class；
Step 9-7: according to target class and trust probability thereof, be calculated the knowledge base defect sample of the unknown crystal after fusion
This；
Step 9-8: set up new crystal knowledge base for unknown crystal, and the knowledge base defect sample of unknown crystal is put into
In new crystal knowledge base.
Step 10: calculate in the crystal knowledge base defect sample of kind belonging to crystal to be measured with crystal peak shape data to be measured
Maximum similarity value, and determine crystal defect type to be measured according to maximum similarity value or set up new crystal defect sample:
Step 10-1: extract the crystal knowledge base defect sample with crystal identical type to be measured；
Step 10-2: utilize the crystal knowledge base defect sample structure of kind belonging to crystal peak shape data to be measured and crystal to be measured
Become initial matrix；
Step 10-3: use fuzzy cluster analysis to obtain fuzzy equivalent matrix initial matrix:
Step 10-4: calculate according to fuzzy equivalent matrix in the crystal knowledge base defect sample of kind belonging to crystal to be measured with
The maximum λ of crystal peak shape data similarity to be measured*；
Step 10-5: defined threshold λ, if λ*>=λ, defect type belonging to crystal the most to be measured is and crystal peak shape data to be measured
The defect type belonging to defect sample that similarity is maximum；If λ*< these peak shape data are then put into by λ as new defect sample
In this crystal knowledge base.
The method carrying out different crystal characteristic measurement according to Multifunctional X-ray direction finder, comprises the steps:
Step 1: wafer to be measured is placed on sample mounting table；
Step 2:X ray generator launches X-ray；
Step 3: scintillation detector gathers the X-ray of wafer diffraction to be measured, and the intensity-conversion of X-ray is become pulse frequency
After signal, it is sent to Signal-regulated kinase；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by Signal-regulated kinase, goes forward side by side
After line frequency pressure conversion process, it is sent to sampler；
Step 5: the voltage analog that the Signal-regulated kinase received exports is converted into digital quantity i.e. peak shape by sampler
Data, are sent to PLC control module；
Step 6: set the title of crystal to be measured, this measuring surface of crystal to be measured, crystal to be measured by industrial PC
Theoretical peak angle and this scanning angle scope measured, and be sent to PLC control module；
Step 7:PLC control module drives sample mounting table to rotate by driving device for step-by-step, and meanwhile, PLC controls
The peak shape data that the sampler received sends are sent to industrial PC by module；
Step 8: industrial PC sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 9: revise peak-shaped curve, and eliminate peak-shaped curve angular error, obtain base peak sigmoid curves；
Step 10: extract feature according to base peak sigmoid curves, and store and show.
Utilize Multifunctional X-ray direction finder to carry out manual orientation method for measuring, comprise the steps:
Step 1: wafer to be measured is placed on sample mounting table；
Step 2:X ray generator launches X-ray；
Step 3: scintillation detector gathers the X-ray of wafer diffraction to be measured, and the intensity-conversion of X-ray is become pulse frequency
After signal, it is sent to Signal-regulated kinase；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by Signal-regulated kinase, goes forward side by side
After line frequency pressure conversion process, it is sent to sampler；
Step 5: the voltage analog that the Signal-regulated kinase received exports is converted into digital quantity i.e. peak shape by sampler
Data, are sent to PLC control module；
Step 6: manually shake handwheel controls the rotation of sample mounting table, meanwhile, the peak that the sampler received is sent by PLC
Graphic data is sent to industrial PC；
Step 7: industrial PC sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 8: judge whether peak-shaped curve reaches maximum, is to eliminate peak-shaped curve angular error, and perform step 9,
Otherwise, return step 6, continue shake handwheel；
Step 9: extract feature according to peak-shaped curve, and store and show.
Utilize Multifunctional X-ray direction finder to carry out the method obtaining angular error, comprise the steps:
Step 1: the wafer of known standard angle is placed on sample mounting table；
Step 2:X ray generator launches X-ray；
Step 3: scintillation detector gathers the X-ray of wafer diffraction to be measured, and the intensity-conversion of X-ray is become pulse frequency
After signal, it is sent to Signal-regulated kinase；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by Signal-regulated kinase, goes forward side by side
After line frequency pressure conversion process, it is sent to sampler；
Step 5: the voltage analog that the Signal-regulated kinase received exports is converted into digital quantity i.e. peak shape by sampler
Data, are sent to PLC control module；
Step 6: set the title of crystal to be measured, this measuring surface of crystal to be measured, crystal to be measured by industrial PC
Theoretical peak angle and this scanning angle scope measured, and be sent to PLC control module；
Step 7:PLC control module drives sample mounting table to rotate or Non-follow control sample by driving device for step-by-step
Mounting table rotates, and meanwhile, the peak shape data that the sampler received sends are sent to industrial PC by PLC control module；
Step 8: industrial PC sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 9: calculate peak-shaped curve and reach angle corresponding during maximum and the difference of wafer standard angle, be angle by mistake
Difference.
Beneficial effect: a kind of Multifunctional X-ray direction finder of the present invention and method have following excellent compared with prior art
Gesture:
(1) present invention integrates multiple monocrystal X-ray orientation device measurement system, and the design of this integration reaches
Reduction equipment cost, ensure product consistency, significantly improve production efficiency purpose；
(2) data detecting each monocrystal material carry out merging arrangement, and it are carried out intelligent decision, according to working as pre-test
Data, intelligence obtains the defect type of monocrystal material, and then reaches in the case of not having mass data to support, according to known list
The related data of brilliant material can deduce the requirement of the correlated characteristic of certain new single-crystal material, substantially increases the profit of data with existing
By efficiency, reduce artificial judgment error；
(3) using scintillation detector as X-ray detector, degree of stability is higher, and capacity of resisting disturbance is strong, compensate for Geiger tube
Receiving signal more weak, output pulse waveform is nonstandard, and clutter is more, is disturbed serious deficiency.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of Multifunctional X-ray direction finder of one embodiment of the present invention, 1 workbench, 2
Radiation protection hood, 3X ray high voltage power supply, 4X ray generator support, 5X ray generator, 6 monochromators, 7 flash detections
Device, 8 scintillation detector supports, 9 Signal-regulated kinase, 10 motors, 11 driving device for step-by-step, 12 rotary shafts, 13 handss
Wheel, 14 sample mounting tables, 15 air exhausters, 16 bolts, 17 samplers, 18PLC control module, 19 industrial PCs, 20 printers,
21 crystal to be measured；
Fig. 2 is the circuit theory diagrams of the Signal-regulated kinase of one embodiment of the present invention；
Fig. 3 is the square sample loading table schematic diagram of one embodiment of the present invention, 22 stands, 23 pore walls；
Fig. 4 is the circular sample loading table schematic diagram of one embodiment of the present invention；
Fig. 5 is the pore wall gradient adjustable square sample loading table schematic diagram of one embodiment of the present invention, and 24 is oblique
Degree regulation cock；
Fig. 6 is the pore wall gradient adjustable circular sample loading table schematic diagram of one embodiment of the present invention；
Fig. 7 is the rocking curve determination system flow chart of one embodiment of the present invention；
Fig. 8 is the monocrystal parametric measurement system flow chart of one embodiment of the present invention；
Fig. 9 is that the SC cut type of one embodiment of the present invention measures system flow chart；
Figure 10 is that the silicon single crystal of one embodiment of the present invention measures system flow chart；
Figure 11 is that the semi-automatic position finder of one embodiment of the present invention measures system flow chart；
Figure 12 is the crystal defect recognition methods flow chart of one embodiment of the present invention；
Figure 13 be one embodiment of the present invention crystal defect recognition methods in DS evidence fusion process flow diagram flow chart；
Figure 14 be one embodiment of the present invention crystal defect recognition methods in fuzzy cluster analysis process flow diagram flow chart；
Figure 15 is the manual orientation instrument assay method flow chart of one embodiment of the present invention；
Figure 16 is the acquisition angular error method flow diagram automatically of one embodiment of the present invention；
Figure 17 is the manually acquisition angular error method flow diagram of one embodiment of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawings one embodiment of the present invention is elaborated.
A kind of Multifunctional X-ray direction finder of present embodiment, as it is shown in figure 1, include:
Workbench 1, radiation protection hood 2, X-ray generation system, diffracted ray receive system, crystal prototype turntable and meter
Calculation machine control system；
Described workbench 1 is arranged over radiation protection hood 2；
Described X-ray generation system includes: X-ray high voltage power supply 3, x ray generator support 4, x ray generator 5
With monochromator 6, X-ray high voltage power supply 3 is arranged on below workbench 1, and is connected with x ray generator 5, x ray generator 5
Being fixed on workbench 1 by x ray generator support 4, monochromator 6 is fixed on x ray generator 5, the outlet of X-ray tube
Roentgenization, on monochromator 6, removes KβAnd successive line, the K of remaining relatively monochromatizationαRoentgenization rotates in sample wafer
On tested wafer 21 on platform, and meet at a bit with tested wafer 21 center；
Described diffracted ray receives system and includes scintillation detector 7, scintillation detector support 8 and Signal-regulated kinase 9, flicker
Detector 7 is fixed on workbench 1 by scintillation detector support 8, and scintillation detector 7 is for receiving wafer 21 diffraction to be measured
X-ray, and by the pulse duration frequency signal corresponding to the intensity-conversion one-tenth of the X-ray received, the outfan of scintillation detector 7 and letter
The input DIN of number conditioning module 9 connects, as in figure 2 it is shown, the pulse duration frequency signal of scintillation detector 7 output is adjusted through signal
Reason modular circuit is filtered, amplifies, compares, digital buffer, integration amplify and filtering follow process after export.
Described crystal prototype turntable include motor 10, driving device for step-by-step 11, rotary shaft 12, handwheel 13,
Sample mounting table 14, air exhauster 15 and bolt 16, motor 10 and driving device for step-by-step 11 are arranged at workbench 1 time
Side, driving device for step-by-step 11 is connected with motor 10, and motor 10 is by rotary shaft 12 and sample mounting table 14 phase
Even, handwheel 13 is connected with rotary shaft 12, and sample mounting table 14 is fixed in rotary shaft 12 by bolt 16, air exhauster 15 and sample
Mounting table 14 connects；
Described sample mounting table 14 is replaced by demounting bolt 16.
Described computer control system includes sampler 17, PLC control module 18, industrial PC 19 and printer 20,
Described industrial PC 19 is provided with rocking curve determination system, monocrystal parametric measurement system, and SC cut type measures system, silicon
Monocrystalline measures system, and semi-automatic position finder measures system, and manual orientation instrument measures system and crystal defect identification system；Sampling
The sampling end of device 17 is connected with the outfan VOUT of the Signal-regulated kinase 9 shown in Fig. 2, the outfan of sampler 17 and PLC
Control module 18 input is connected, and PLC control module 18 outfan is connected with driving device for step-by-step 11, industrial PC
19 are connected with PLC control module 18, and industrial PC 19 is substantially carried out data process, model calculating, feature extraction, shows, beats
The functions such as print, storage, defect recognition and parameter setting, systematic survey relevant parameter is passed through serial communication by industrial PC 19
It is sent to PLC control module 18, PLC control module 18 exports Pulse Width Control motor 10 and rotate；Printer 20 and industry
Connect with PC 19, be used for printing peak type curve and crystal characteristic testing result.
As shown in Fig. 3 to Fig. 6, described sample mounting table includes stand 22 and pore wall 23, and stand 22 is solid by bolt 16
Being scheduled in rotary shaft 12, the pore in pore wall 23 is connected with air exhauster 15, and different according to wafer to be measured, sample mounting table has many
Kind, as it is shown on figure 3, the stand 22 of sample mounting table and pore wall 23 angle are 90 °, pore wall 23 is with the wafer to be measured that holds
Width W is identical with height H；As shown in Figure 4, stand 22 and pore wall 23 angle of sample mounting table are 90 °, and pore wall 23 is with containing
The radius R of the wafer to be measured put is identical；Adjust as it is shown in figure 5, be provided with gradient between the stand 22 of sample mounting table and pore wall 23
Joint bolt 24, between stand 22 and pore wall 23, angle is adjustable, and pore wall 23 is with the width W of wafer to be measured held and highly H phase
With；As shown in Figure 6, being provided with pitch adjustment bolt 24 between stand 22 and the pore wall 23 of sample mounting table, pore wall 23 is with holding
The radius R of wafer to be measured identical.
Described rocking curve determination system, as it is shown in fig. 7, scintillation detector gathers the X-ray of wafer diffraction to be measured, concurrently
Giving Signal-regulated kinase to process, the voltage analog that Signal-regulated kinase exports is converted into peak shape data by sampler, and PLC is controlled
Sample preparation product mounting table rotates, and peak shape data are sent to industrial PC simultaneously, and industrial PC obtains peak according to peak shape data
Sigmoid curves, uses swing curve characteristic model to be modified the peak-shaped curve obtained, after obtaining the swing curve of standard, according to
The swing curve extraction feature of standard: half peak breadth, peak angle and peak height, repeats n aforesaid operations, and will close
Key feature half peak breadth stores after averaging and shows.
Described monocrystal parametric measurement system, as shown in Figure 8, scintillation detector gathers the X-ray of wafer diffraction to be measured, and
Being sent to Signal-regulated kinase process, the voltage analog that Signal-regulated kinase exports is converted into peak shape data, PLC by sampler
Controlling sample mounting table to rotate, peak shape data are sent to industrial PC simultaneously, industrial PC obtains according to peak shape data
Peak-shaped curve, uses monocrystal parameter attribute model to be modified the peak-shaped curve obtained, after obtaining the peak-shaped curve of standard,
Peak-shaped curve extraction feature according to standard: peak angle and peak height, repeats n aforesaid operations, and key is special
Levy and store after peak angle is averaged and show.
Described SC cut type measures system, as it is shown in figure 9, scintillation detector gathers the X-ray of wafer diffraction to be measured, and sends
Processing to Signal-regulated kinase, the voltage analog that Signal-regulated kinase exports is converted into peak shape data by sampler, and PLC controls
Sample mounting table rotates, and peak shape data are sent to industrial PC simultaneously, and industrial PC obtains peak shape according to peak shape data
Curve, uses SC cut type characteristic model to be modified the peak-shaped curve obtained, after obtaining the peak-shaped curve of standard, according to standard
Peak-shaped curve extract feature: peak angle and peak height, repeat n aforesaid operations, and by key feature peak angle
Degree stores after averaging and shows.
Described silicon single crystal measures system, and as shown in Figure 10, scintillation detector gathers the X-ray of wafer diffraction to be measured, concurrently
Giving Signal-regulated kinase to process, the voltage analog that Signal-regulated kinase exports is converted into peak shape data by sampler, and PLC is controlled
Sample preparation product mounting table rotates, and peak shape data are sent to industrial PC simultaneously, and industrial PC obtains peak according to peak shape data
Sigmoid curves, uses silicon single crystal parameter attribute model to be modified the peak-shaped curve obtained, after obtaining the peak-shaped curve of standard, and root
Peak-shaped curve extraction feature according to standard: peak angle and peak height, repeats n aforesaid operations, and by key feature
Peak angle stores after averaging and shows；Judge whether to need to change wafer measuring surface, be, change weight after wafer measuring surface
Multiple above operation, no, detection terminates.
Described semi-automatic position finder measures system, and as shown in figure 11, scintillation detector gathers the X of wafer diffraction to be measured and penetrates
Line, and it is sent to Signal-regulated kinase process, the voltage analog that Signal-regulated kinase exports is converted into peak shape number by sampler
According to, PLC controls sample mounting table and rotates, and peak shape data is sent to industrial PC simultaneously, and industrial PC is according to peak shape number
According to obtaining peak-shaped curve, being modified the peak-shaped curve obtained, after obtaining the peak-shaped curve of standard, the peak shape according to standard is bent
Line drawing feature: peak angle and peak height, repeats n aforesaid operations, and is averaged by key feature peak angle
Store after value and show.
Described manual orientation instrument measures system, and scintillation detector gathers the X-ray of wafer diffraction to be measured, and is sent to signal
Conditioning module processes, and the voltage analog that Signal-regulated kinase exports is converted into peak shape data by sampler, and shake handwheel controls
Sample mounting table rotates, and meanwhile, peak shape data are sent to industrial PC by PLC, and it is bent that PC obtains peak shape according to peak shape data
Line, is modified the peak-shaped curve obtained, after obtaining the peak-shaped curve of standard, according to the peak-shaped curve extraction feature of standard:
Peak angle and peak height, and key feature peak angle is stored and shows.
Described crystal defect identification system, scintillation detector gathers the X-ray of wafer diffraction to be measured, and is sent to signal tune
Reason resume module, the voltage analog that Signal-regulated kinase exports is converted into peak shape data by sampler, and PLC controls sample and places
Platform rotates, and peak shape data are sent to industrial PC simultaneously, and industrial PC obtains peak-shaped curve according to peak shape data, if
Crystal to be measured is unknown crystal, industrial PC calculate in every kind of crystal knowledge base defect sample with crystal to be measured mate defect
Sample, and coupling defect sample is carried out data fusion, obtain the knowledge base defect sample of this crystal to be measured；Described every kind of crystal
Knowledge base comprises the peak shape data i.e. defect sample of the different defect types of this kind of crystal；If crystal to be measured is known crystalline substance
Body, calculates the maximum similarity with crystal peak shape data to be measured in the crystal knowledge base defect sample of kind belonging to crystal to be measured
Value, and determine crystal defect type to be measured according to maximum similarity value or set up new crystal defect sample.
As shown in figure 12, utilize Multifunctional X-ray direction finder to carry out crystal defect and know method for distinguishing, comprise the steps:
Step 1: wafer to be measured is placed on sample mounting table；
Step 2:X ray generator launches X-ray；
Step 3: scintillation detector gathers the X-ray of wafer diffraction to be measured, and the intensity-conversion of X-ray is become pulse frequency
After signal, it is sent to Signal-regulated kinase；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by Signal-regulated kinase, goes forward side by side
After line frequency pressure conversion process, it is sent to sampler；
Step 5: the voltage analog that the Signal-regulated kinase received exports is converted into digital quantity i.e. peak shape by sampler
Data, are sent to PLC control module；
Step 6: set the title of crystal to be measured, this measuring surface of crystal to be measured, crystal to be measured by industrial PC
Theoretical peak angle and this scanning angle scope measured, and be sent to PLC control module；
Step 7:PLC control module drives sample mounting table to rotate by driving device for step-by-step, and meanwhile, PLC controls
The peak shape data that the sampler received sends are sent to industrial PC by module；
Step 8: if wafer to be measured is unknown crystal, then perform step 9, otherwise, perform step 10；
Step 9: industrial PC calculate in every kind of crystal knowledge base defect sample with crystal to be measured mate defect sample,
And coupling defect sample is carried out data fusion, obtain the knowledge base defect sample of this crystal to be measured；Described every kind of crystal knowledge
Storehouse comprises the peak shape data i.e. defect sample of the different defect types of this kind of crystal:
Step 9-1: extract i-th kind of crystal knowledge base defect sample and constitute initial matrix with wafer peak shape data to be measured；
Step 9-2: use fuzzy cluster analysis to obtain fuzzy equivalent matrix R to initial*:
Step 9-3: according to R*Obtain in crystal knowledge base defect sample the highest with crystal peak shape data similarity to be measured
Defect type, the coupling defect type of crystal the most to be measured and i-th kind of crystal, i.e. target class；
Step 9-4: repeat above procedure, until mating the knowledge base of all kind of crystalline, obtains crystal to be measured
Target class with all kind of crystalline；
Step 9-5: as shown in figure 13, builds target class matrix by the target class obtained, enters element in target class matrix
Row brief inference, and calculate belief function, method particularly includes:
Step 9-5-1: build target class matrixWherein,For target class, n*For
Target class quantity, X* j=[x*1j,x*2j,…,x*mj]T, x*1j,x*2j,…,x*mjFor m characteristic trait of jth target class,
Raw data matrix is expressed as:
Each behavior in note target class matrix θ:Wherein i=1,2 ..., m；
Step 9-5-2: present embodiment uses maximum standardized method to be standardized processing, and obtains normal data square
Battle array is:
WhereinN=max{x*i1,x*i2,…,x*in, j=1,2 ..., n*；
Step 9-5-3: basic brief inference matrix is:
Wherein, basic brief inference function:
Step 9-5-4: belief function:
Step 9-6: according to DS evidence fusion rule, belief function is carried out data fusion, the basic belief function after fusion
Bel is:
Wherein, MjFor jth target class x* jTrust probability；
In present embodiment, the computational methods of basic belief function Bel are: set
WithBelief function after fusion is:
Wherein:
Step 9-7: according to target class and trust probability thereof, be calculated the knowledge base sample of the unknown crystal after fusion
X*:
Wherein, xi *Ith feature character value for the knowledge base defect sample of crystal to be measured；
Step 9-8: set up new knowledge base for unknown crystal, and the knowledge base defect sample of unknown crystal is put into knowledge
In storehouse；
Step 10: calculate in the crystal knowledge base defect sample of kind belonging to crystal to be measured with crystal peak shape data to be measured
Maximum similarity value, and determine crystal defect type to be measured according to maximum similarity value or set up new crystal defect sample:
Step 10-1: extract the crystal knowledge base defect sample with crystal identical type to be measured；
Step 10-2: utilize the crystal knowledge base defect sample structure of kind belonging to crystal peak shape data to be measured and crystal to be measured
Become initial matrix；
Step 10-3: use fuzzy cluster analysis to obtain fuzzy equivalent matrix R initial matrix*；
Step 10-4: calculate according to fuzzy equivalent matrix in the crystal knowledge base defect sample of kind belonging to crystal to be measured with
The maximum λ of crystal peak shape data similarity to be measured*；
Step 10-5: defined threshold λ, if λ*>=λ, defect type belonging to crystal the most to be measured is and crystal peak shape data to be measured
The defect type belonging to defect sample that similarity is maximum；If λ*< these peak shape data are then put into by λ as new defect sample
In this crystal knowledge base.
As shown in figure 14, described fuzzy cluster analysis process comprises the steps:
(1) set its domain as:
Wherein, X1For crystal peak shape data to be measured,For defect sample in crystal knowledge base；
xi*1,…,xi*mForM characteristic trait, i*=1,2 ..., n, j*
=1,2 ..., m；Obtain raw data matrix:
(2) present embodiment uses maximum standardized method to be standardized U processing, and obtains canonical matrix:
Wherein,
(3) correlation coefficient process is used to set up fuzzy similarity matrix R:
Wherein,
(4) use quadratic method to seek transitive closure, then ask for fuzzy equivalent matrix R by transitive closure*, i.e.
WhenTime,
In present embodiment, utilize the method that Multifunctional X-ray direction finder carries out different crystal characteristic measurement, including:
Step 1: wafer to be measured is placed on sample mounting table；
Step 2:X ray generator launches X-ray；
Step 3: scintillation detector gathers the X-ray of wafer diffraction to be measured, and the intensity-conversion of X-ray is become pulse frequency
After signal, it is sent to Signal-regulated kinase；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by Signal-regulated kinase, goes forward side by side
After line frequency pressure conversion process, it is sent to sampler；
Step 5: the voltage analog that the Signal-regulated kinase received exports is converted into digital quantity i.e. peak shape by sampler
Data, are sent to PLC control module；
Step 6: set this survey of detection number of operations n, the title of crystal to be measured, crystal to be measured by industrial PC
Amount face, the theoretical peak angle of crystal to be measured and this scanning angle scope measured, and it is sent to PLC control module；
Step 7:PLC control module drives sample mounting table to rotate by driving device for step-by-step, and meanwhile, PLC controls
The peak shape data that the sampler received sends are sent to industrial PC by module；
Step 8: industrial PC sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 9: revise peak-shaped curve, and eliminate peak-shaped curve angular error, obtain base peak sigmoid curves；
Step 10: extract feature according to base peak sigmoid curves, including half peak breadth, peak angle and peak height；
Step 11: judge whether to reach to detect number of operations n, be, after calculated key feature meansigma methods, to deposit
Storage and display, perform step 12；No, then perform step 1；
Step 12: judge whether to change wafer, be, change wafer, and perform step 1；No, detection terminates；
As shown in figure 15, utilize Multifunctional X-ray direction finder to carry out manual orientation method for measuring, comprise the steps:
Step 1: wafer to be measured is placed on sample mounting table；
Step 2:X ray generator launches X-ray；
Step 3: scintillation detector gathers the X-ray of wafer diffraction to be measured, and the intensity-conversion of X-ray is become pulse frequency
After signal, it is sent to Signal-regulated kinase；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by Signal-regulated kinase, goes forward side by side
After line frequency pressure conversion process, it is sent to sampler；
Step 5: the voltage analog that the Signal-regulated kinase received exports is converted into digital quantity i.e. peak shape by sampler
Data, are sent to PLC control module；
Step 6: manually shake handwheel controls the rotation of sample mounting table, meanwhile, the peak that the sampler received is sent by PLC
Graphic data is sent to industrial PC；
Step 7: industrial PC sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 8: judge whether peak-shaped curve reaches maximum, is to perform step 9, otherwise, continue shake handwheel；
Step 9: extract feature according to peak-shaped curve, and store and show；
Step 10: judge whether to change wafer, be, eliminate peak-shaped curve angular error, and change wafer, and perform step
1；No, detection terminates.
As shown in figure 16, utilize the method that Multifunctional X-ray direction finder obtains angular error automatically, including walking as follows
Rapid:
Step 1: the wafer of known standard angle is placed on sample mounting table；
Step 2:X ray generator launches X-ray；
Step 3: scintillation detector gathers the X-ray of wafer diffraction to be measured, and the intensity-conversion of X-ray is become pulse frequency
After signal, it is sent to Signal-regulated kinase；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by Signal-regulated kinase, goes forward side by side
After line frequency pressure conversion process, it is sent to sampler；
Step 5: the voltage analog that the Signal-regulated kinase received exports is converted into digital quantity i.e. peak shape by sampler
Data, are sent to PLC control module；
Step 6: set the title of crystal to be measured, this measuring surface of crystal to be measured, crystal to be measured by industrial PC
Theoretical peak angle and this scanning angle scope measured, and be sent to PLC control module；
Step 7:PLC control module drives sample mounting table to rotate by driving device for step-by-step, and meanwhile, PLC controls
The peak shape data that the sampler received sends are sent to industrial PC by module；
Step 8: industrial PC sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 9: calculate peak-shaped curve and reach angle corresponding during maximum and the difference of wafer standard angle, be angle by mistake
Difference.
After the operation of present embodiment alignment is for performing 6 calibration operations, take angular error meansigma methods, such as: standard angle
Degree is 13 ° 20 ' 00 ", if the peak-peak corresponding angle of 6 operations is 13 ° 20 ' 05 ", i.e. angular error is+5 ", examine
" angular error, eliminates the systematic error produced because of frame for movement, improves and surveys when surveying operation, angle value in peak shape data to be deducted 5
Amount degree of accuracy.
As shown in figure 17, utilize the method that Multifunctional X-ray direction finder manually obtains angular error, including walking as follows
Rapid:
Step 1: the wafer of known standard angle is placed on sample mounting table；
Step 2:X ray generator launches X-ray；
Step 3: scintillation detector gathers the X-ray of wafer diffraction to be measured, and the intensity-conversion of X-ray is become pulse frequency
After signal, it is sent to Signal-regulated kinase；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by Signal-regulated kinase, goes forward side by side
After line frequency pressure conversion process, it is sent to sampler；
Step 5: the voltage analog that the Signal-regulated kinase received exports is converted into digital quantity i.e. peak shape by sampler
Data, are sent to PLC control module；
Step 6: set the title of crystal to be measured, this measuring surface of crystal to be measured, crystal to be measured by industrial PC
Theoretical peak angle and this scanning angle scope measured, and be sent to PLC control module；
Step 7: Non-follow control sample mounting table rotates, meanwhile, the peak that the sampler received is sent by PLC control module
Graphic data is sent to industrial PC；
Step 8: industrial PC sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 9: calculate peak-shaped curve and reach angle corresponding during maximum and the difference of wafer standard angle, be angle by mistake
Difference.
Claims (10)
1. a Multifunctional X-ray direction finder, it is characterised in that: including:
Workbench, radiation protection hood, X-ray generation system, diffracted ray receive system, crystal prototype turntable and computer control
System processed；
Described workbench is arranged over radiation protection hood；
Described X-ray generation system includes: X-ray high voltage power supply, x ray generator support, x ray generator and monochrome
Device, X-ray high voltage power supply is arranged on below workbench, and is connected with x ray generator, and x ray generator is sent out by X-ray
Raw device support is fixing on the table, and monochromator is fixed on x ray generator, makes x ray generator send roentgenization and exists
On monochromator, and the X-ray filtered through monochromator can be radiated at the center of wafer to be measured on sample wafer turntable；
Described diffracted ray receives system and includes scintillation detector, scintillation detector support and Signal-regulated kinase, treats for reception
The scintillation detector of the X-ray surveying wafer diffraction is fixing on the table by scintillation detector support, scintillation detector and letter
Number conditioning module connects, and Signal-regulated kinase is positioned over below workbench；
Described crystal prototype turntable includes motor, driving device for step-by-step, rotary shaft, handwheel, sample mounting table, takes out
Mechanism of qi and bolt, motor and driving device for step-by-step are arranged at below workbench, driving device for step-by-step and stepping
Motor is connected, and motor is connected with sample mounting table by rotary shaft, and handwheel is connected with rotary shaft, and sample mounting table passes through spiral shell
Bolt is fixing on the rotating shaft, and air exhauster is connected with sample mounting table；
Described computer control system includes sampler, PLC control module, industrial PC, the sampling end of sampler and signal
Conditioning module is connected, and the outfan of sampler is connected with PLC control module input, PLC control module outfan and step
Entering motor driver to be connected, industrial PC is connected with PLC control module.
A kind of Multifunctional X-ray direction finder the most according to claim 1, it is characterised in that described sample mounting table includes
Stand and pore wall, stand is bolted in rotary shaft, and sample mounting table can be replaced by demounting bolt, pore
Pore in wall is connected with air exhauster, and pore wall is identical with the wafer shape to be measured held.
A kind of Multifunctional X-ray direction finder the most according to claim 1, it is characterised in that the platform of described sample mounting table
Frame and pore wall angle are 90 °.
A kind of Multifunctional X-ray direction finder the most according to claim 1, it is characterised in that the platform of described sample mounting table
Being provided with pitch adjustment bolt between frame and pore wall, between stand and pore wall, angle is adjustable.
5. utilize the Multifunctional X-ray direction finder described in claim 1 to carry out crystal defect and know method for distinguishing, it is characterised in that
Comprise the steps:
Step 1: wafer to be measured is placed on sample mounting table；
Step 2:X ray generator launches X-ray；
Step 3: scintillation detector gathers the X-ray of wafer diffraction to be measured, and the intensity-conversion of X-ray is become pulse duration frequency signal
After, it is sent to Signal-regulated kinase；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by Signal-regulated kinase, line frequency of going forward side by side
After pressure conversion process, it is sent to sampler；
Step 5: the voltage analog that the Signal-regulated kinase received exports is converted into digital quantity i.e. peak shape data by sampler,
It is sent to PLC control module；
Step 6: set the title of crystal to be measured, this measuring surface of crystal to be measured, the reason of crystal to be measured by industrial PC
Opinion peak angle and this scanning angle scope measured, and it is sent to PLC control module；
Step 7:PLC control module drives sample mounting table to rotate by driving device for step-by-step, meanwhile, and PLC control module
The peak shape data that the sampler received sends are sent to industrial PC；
Step 8: if wafer to be measured is unknown crystal, then perform step 9, otherwise, perform step 10；
Step 9: industrial PC calculates the defect sample that mates in every kind of crystal knowledge base defect sample with crystal to be measured, and will
Coupling defect sample carries out data fusion, obtains the knowledge base defect sample of this crystal to be measured；In described every kind of crystal knowledge base
Comprise the peak shape data i.e. defect sample of the different defect types of this kind of crystal；
Step 10: calculate the maximum with crystal peak shape data to be measured in the crystal knowledge base defect sample of kind belonging to crystal to be measured
Similarity value, and determine crystal defect type to be measured according to maximum similarity value or set up new crystal defect sample.
Crystal defect the most according to claim 5 knows method for distinguishing, it is characterised in that step 9 specifically includes following steps:
Step 9-1: extract i-th kind of crystal knowledge base defect sample and constitute initial matrix with wafer peak shape data to be measured；
Step 9-2: use fuzzy cluster analysis to obtain fuzzy equivalent matrix initial matrix:
Step 9-3: similar according to the peak shape data that fuzzy equivalent matrix obtains in crystal knowledge base defect sample to crystal to be measured
Spend the highest defect sample, obtain the coupling defect sample of crystal to be measured and i-th kind of crystal, i.e. target class；
Step 9-4: repeat above procedure, until mating defect sample in the knowledge base of all kind of crystalline, is treated
Survey the target class of crystal and all kind of crystalline；
Step 9-5: build target class matrix by the target class obtained, element in target class matrix is carried out brief inference, and counts
Calculate belief function；
Step 9-6: according to DS evidence fusion rule, belief function is carried out data fusion, the basic belief function Bel after fusion
For:
Bel=(M1,M2,…,Mj..., Mn)
Wherein, MjTrust probability for jth target class；
Step 9-7: according to target class and trust probability thereof, be calculated the knowledge base defect sample of the unknown crystal after fusion；
Step 9-8: set up new crystal knowledge base for unknown crystal, and the knowledge base defect sample of unknown crystal is put into new
Crystal knowledge base.
Crystal defect recognition methods the most according to claim 5, it is characterised in that step 10 specifically includes following steps:
Step 10-1: extract the crystal knowledge base defect sample with crystal identical type to be measured；
Step 10-2: at the beginning of utilizing the crystal knowledge base defect sample of kind belonging to crystal peak shape data to be measured and crystal to be measured to constitute
Beginning matrix；
Step 10-3: use fuzzy cluster analysis to obtain fuzzy equivalent matrix initial matrix:
Step 10-4: calculate in the crystal knowledge base defect sample of kind belonging to crystal to be measured with to be measured according to fuzzy equivalent matrix
The maximum λ of crystal peak shape data similarity*；
Step 10-5: defined threshold λ, if λ*>=λ, defect type belonging to crystal the most to be measured is similar to crystal peak shape data to be measured
The defect type belonging to defect sample that degree is maximum；If λ*< these peak shape data are then put into this crystalline substance as new defect sample by λ
In body knowledge base.
8. utilizing the method that the Multifunctional X-ray direction finder described in claim 1 carries out different crystal characteristic measurement, its feature exists
In, comprise the steps:
Step 1: wafer to be measured is placed on sample mounting table；
Step 2:X ray generator launches X-ray；
Step 3: scintillation detector gathers the X-ray of wafer diffraction to be measured, and the intensity-conversion of X-ray is become pulse duration frequency signal
After, it is sent to Signal-regulated kinase；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by Signal-regulated kinase, line frequency of going forward side by side
After pressure conversion process, it is sent to sampler；
Step 5: the voltage analog that the Signal-regulated kinase received exports is converted into digital quantity i.e. peak shape data by sampler,
It is sent to PLC control module；
Step 6: set the title of crystal to be measured, this measuring surface of crystal to be measured, the reason of crystal to be measured by industrial PC
Opinion peak angle and this scanning angle scope measured, and it is sent to PLC control module；
Step 7:PLC control module drives sample mounting table to rotate by driving device for step-by-step, meanwhile, and PLC control module
The peak shape data that the sampler received sends are sent to industrial PC；
Step 8: industrial PC sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 9: revise peak-shaped curve, and eliminate peak-shaped curve angular error, obtain base peak sigmoid curves；
Step 10: extract feature according to base peak sigmoid curves, and store and show.
9. utilize the Multifunctional X-ray direction finder described in claim 1 to carry out manual orientation method for measuring, it is characterised in that
Comprise the steps:
Step 1: wafer to be measured is placed on sample mounting table；
Step 2:X ray generator launches X-ray；
Step 3: scintillation detector gathers the X-ray of wafer diffraction to be measured, and the intensity-conversion of X-ray is become pulse duration frequency signal
After, it is sent to Signal-regulated kinase；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by Signal-regulated kinase, line frequency of going forward side by side
After pressure conversion process, it is sent to sampler；
Step 5: the voltage analog that the Signal-regulated kinase received exports is converted into digital quantity i.e. peak shape data by sampler,
It is sent to PLC control module；
Step 6: manually shake handwheel controls the rotation of sample mounting table, meanwhile, the peak shape number that the sampler received is sent by PLC
According to being sent to industrial PC；
Step 7: industrial PC sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 8: judge whether peak-shaped curve reaches maximum, is to eliminate peak-shaped curve angular error, and perform step 9, no
Then, return step 6, continue shake handwheel；
Step 9: extract feature according to peak-shaped curve, and store and show.
10. utilize the method that the Multifunctional X-ray direction finder described in claim 1 carries out obtaining angular error, it is characterised in that
Comprise the steps:
Step 1: the wafer of known standard angle is placed on sample mounting table；
Step 2:X ray generator launches X-ray；
Step 3: scintillation detector gathers the X-ray of wafer diffraction to be measured, and the intensity-conversion of X-ray is become pulse duration frequency signal
After, it is sent to Signal-regulated kinase；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by Signal-regulated kinase, line frequency of going forward side by side
After pressure conversion process, it is sent to sampler；
Step 5: the voltage analog that the Signal-regulated kinase received exports is converted into digital quantity i.e. peak shape data by sampler,
It is sent to PLC control module；
Step 6: set the title of crystal to be measured, this measuring surface of crystal to be measured, the reason of crystal to be measured by industrial PC
Opinion peak angle and this scanning angle scope measured, and it is sent to PLC control module；
Step 7:PLC control module drives sample mounting table to rotate by driving device for step-by-step or Non-follow control sample is placed
Platform rotates, and meanwhile, the peak shape data that the sampler received sends are sent to industrial PC by PLC control module；
Step 8: industrial PC sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 9: calculate peak-shaped curve and reach angle corresponding during maximum and the difference of wafer standard angle, be angular error.
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| CN107748171A (en) * | 2017-10-25 | 2018-03-02 | 哈尔滨工业大学 | Method for eliminating optical crystal Ultra-precision Turning sub-surface damage detection sample alignment error |
| CN108152852A (en) * | 2017-12-12 | 2018-06-12 | 中国计量科学研究院 | A kind of adjustable monocrystalline monochromator |
| CN108508046A (en) * | 2018-03-27 | 2018-09-07 | 东北大学 | A kind of device and method that diffracted signal receives and processes |
| CN108508046B (en) * | 2018-03-27 | 2021-05-18 | 东北大学 | Method for receiving and processing diffraction signal |
| CN108613641A (en) * | 2018-07-23 | 2018-10-02 | 安徽创谱仪器科技有限公司 | Two-dimentional orientation error precision measurement method for thin plate crystals |
| CN109034262A (en) * | 2018-08-13 | 2018-12-18 | 东北大学 | A kind of batch processing method of X-ray orientation device defect recognition |
| CN109034262B (en) * | 2018-08-13 | 2021-08-31 | 东北大学 | Batch processing method for defect identification of X-ray orientation instrument |
| CN109387531A (en) * | 2018-10-31 | 2019-02-26 | 宁波英飞迈材料科技有限公司 | A kind of diffraction delustring rocking curve image measuring device and method |
| CN113433146A (en) * | 2021-07-23 | 2021-09-24 | 深圳先进电子材料国际创新研究院 | Crystal orientation method, crystal orientation device and crystal processing method |
| CN113433146B (en) * | 2021-07-23 | 2022-05-27 | 深圳先进电子材料国际创新研究院 | Crystal orientation method, crystal orientation device and crystal processing method |
| CN113945591A (en) * | 2021-09-14 | 2022-01-18 | 中国电子科技集团公司第十一研究所 | Half-peak-width automatic test tool |
| CN113945591B (en) * | 2021-09-14 | 2023-10-24 | 中国电子科技集团公司第十一研究所 | Half-peak width automatic test fixture |
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