CN106124542B - The method for carrying out crystal non-destructive testing using Multifunctional X-ray direction finder - Google Patents
The method for carrying out crystal non-destructive testing using Multifunctional X-ray direction finder Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims abstract description 179
- 238000000034 method Methods 0.000 title claims abstract description 55
- 238000009659 non-destructive testing Methods 0.000 title abstract description 8
- 230000007547 defect Effects 0.000 claims abstract description 94
- 238000005259 measurement Methods 0.000 claims abstract description 19
- 230000004927 fusion Effects 0.000 claims abstract description 13
- 230000005855 radiation Effects 0.000 claims abstract description 8
- 239000000523 sample Substances 0.000 claims description 129
- 230000003750 conditioning effect Effects 0.000 claims description 65
- 239000011159 matrix material Substances 0.000 claims description 28
- 238000006243 chemical reaction Methods 0.000 claims description 27
- 238000007621 cluster analysis Methods 0.000 claims description 8
- 239000000284 extract Substances 0.000 claims description 6
- 239000008186 active pharmaceutical agent Substances 0.000 claims description 4
- 238000005070 sampling Methods 0.000 claims description 4
- 239000000039 congener Substances 0.000 claims description 3
- 239000013068 control sample Substances 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 15
- 238000001514 detection method Methods 0.000 abstract description 8
- 230000007812 deficiency Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 10
- 238000012545 processing Methods 0.000 description 7
- 230000000875 corresponding effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000002596 correlated effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000009897 systematic effect Effects 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/207—Diffractometry using detectors, e.g. using a probe in a central position and one or more displaceable detectors in circumferential positions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/20008—Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
- G01N23/20025—Sample holders or supports therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/05—Investigating materials by wave or particle radiation by diffraction, scatter or reflection
- G01N2223/056—Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/10—Different kinds of radiation or particles
- G01N2223/101—Different kinds of radiation or particles electromagnetic radiation
- G01N2223/1016—X-ray
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/30—Accessories, mechanical or electrical features
- G01N2223/306—Accessories, mechanical or electrical features computer control
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/30—Accessories, mechanical or electrical features
- G01N2223/309—Accessories, mechanical or electrical features support of sample holder
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/50—Detectors
- G01N2223/505—Detectors scintillation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/604—Specific applications or type of materials monocrystal
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/646—Specific applications or type of materials flaws, defects
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
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- Biochemistry (AREA)
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- Analysing Materials By The Use Of Radiation (AREA)
Abstract
A method of crystal non-destructive testing being carried out using Multifunctional X-ray direction finder, belongs to monocrystal material manufacture field；Multifunctional X-ray direction finder includes: workbench, radiation protection hood, X-ray generating system, diffracted ray reception system, crystal prototype turntable and computer control system；Sample mounting table in crystal prototype turntable can be replaced by demounting bolt；Method includes: to carry out crystal defect identification, different crystal characteristic measurement, method manual orientation measurement and obtain angular error using Multifunctional X-ray direction finder；The present invention integrates a variety of monocrystal X-ray orientation device measuring systems, reduces equipment cost, ensure that homogeneity of product；Fusion arrangement is carried out to the data of each monocrystal material detection, the defect type of monocrystal material is intelligently obtained, improves the utilization efficiency of data with existing；Use scintillation detector as X-ray detector, stability is higher, strong antijamming capability, compensates for the deficiency of Geiger tube.
Description
Technical field
The invention belongs to monocrystal material manufacture fields, and in particular to a kind of to carry out crystal using Multifunctional X-ray direction finder
The method of non-destructive testing.
Background technique
Being carried out non-destructive testing using X-ray diffraction technology to monocrystal material is a kind of industrial common technological means, is led to
Single-crystal wafer is crossed to the diffraction of X-ray, the indicatrix of available chip to be measured can be analyzed based on this feature curve
To the qualitative characteristics parameter of chip to be measured.
Currently, the X-ray orientation device for each monocrystal material non-destructive testing be it is independent, it is existing that " machine is a piece of " is presented
As, automation equipment level is not high, how intelligent decision monocrystal material defect type the problem of it is urgently to be resolved；Each monocrystal material inspection
The data of survey are mutually indepedent, do not establish mutually reference, reference, with the development of Data fusion technique, pass through certain monocrystalline material
The related data of material speculates that another monocrystal material correlated characteristic should also bring into schedule.X-ray detector receives signal ratio at present
Weaker, clutter is more, and with the raising of equipment precision requirement, the stability of X-ray detector is in urgent need to be improved.
Summary of the invention
Crystal is carried out using Multifunctional X-ray direction finder in view of the deficiencies of the prior art, the present invention provides a kind of
The method of non-destructive testing.
Technical solution of the present invention:
A kind of Multifunctional X-ray direction finder, comprising:
Workbench, radiation protection hood, X-ray generating system, diffracted ray receive system, crystal prototype turntable and calculating
Machine control system；
Radiation protection hood is equipped with above the workbench；
The X-ray generating system includes: X-ray high voltage power supply, X-ray emitter bracket, X-ray emitter and list
Color device, X-ray is arranged with high voltage power supply to be connect below workbench, and with X-ray emitter, and X-ray emitter passes through X-ray
Generator bracket is fixed, and monochromator is fixed in X-ray emitter on the table, and X-ray emitter is made to issue radiation exposure
On monochromator, and the X-ray by monochromator filtering can be radiated at the center of chip to be measured on sample wafer turntable；
It includes scintillation detector, scintillation detector bracket and signal conditioning module that the diffracted ray, which receives system, for connecing
The scintillation detector for receiving the X-ray of chip diffraction to be measured is fixed on the table by scintillation detector bracket, scintillation detector
It is connect with signal conditioning module, signal conditioning module is placed in below workbench；
The crystal prototype turntable includes stepper motor, driving device for step-by-step, rotation axis, handwheel, sample placement
Platform, air exhauster and bolt, stepper motor and driving device for step-by-step are set to below workbench, driving device for step-by-step with
Stepper motor is connected, and stepper motor is connected by rotation axis with sample mounting table, and handwheel is connected with rotation axis, and sample mounting table is logical
It is fixed on the rotating shaft to cross bolt, air exhauster is connect with sample mounting table；
The computer control system includes sampler, PLC control module, industrial PC machine, the sampling end of sampler with
Signal conditioning module is connected, and the output end of sampler is connected with PLC control module input terminal, PLC control module output end
It is connected with driving device for step-by-step, industrial PC machine is connected with PLC control module.
The sample mounting table includes rack and stomata wall, and rack is bolted in rotation axis, sample mounting table
It can be replaced by demounting bolt, the stomata in stomata wall is connected with air exhauster, and stomata wall is with the wafer shape to be measured that holds
It is identical.
The sample mounting table rack and stomata wall angle are that pitch adjustment bolt is equipped between 90 ° or rack and stomata wall,
Angle is adjustable between rack and stomata wall.
Crystal defect is carried out according to Multifunctional X-ray direction finder and knows method for distinguishing, is included the following steps:
Step 1: chip to be measured is placed on sample mounting table；
Step 2:X ray generator emits X-ray；
Step 3: scintillation detector acquires the X-ray of chip diffraction to be measured, and by the intensity-conversion of X-ray at pulse frequency
After signal, it is sent to signal conditioning module；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by signal conditioning module, is gone forward side by side
After line frequency presses conversion process, it is sent to sampler；
Step 5: the voltage analog that the signal conditioning module received exports is converted digital quantity i.e. peak shape by sampler
Data are sent to PLC control module；
Step 6: the title of crystal to be measured, this measuring surface of crystal to be measured, crystal to be measured are set by industrial PC machine
Theoretical peak angle and this measurement scanning angle range, and be sent to PLC control module；
Step 7:PLC control module drives the rotation of sample mounting table by driving device for step-by-step, meanwhile, PLC control
The peak shape data that the sampler received is sent are sent to industrial PC machine by module；
Step 8: if chip to be measured is unknown crystal, thening follow the steps 9, otherwise, execute step 10；
Step 9: industrial PC machine calculates the matching defect sample in every kind of crystal knowledge base defect sample with crystal to be measured,
And matching defect sample is subjected to data fusion, obtain the knowledge base defect sample of the crystal to be measured；Every kind of crystal knowledge
Peak shape data, that is, defect sample of different defect types in library comprising this kind of crystal；
Step 9-1: extracting i-th kind of crystal knowledge base defect sample and chip peak shape data to be measured constitute initial matrix；
Step 9-2: fuzzy equivalent matrix is obtained using fuzzy cluster analysis to initial matrix:
Step 9-3: the peak shape data in crystal knowledge base defect sample with crystal to be measured are obtained according to fuzzy equivalent matrix
The highest defect sample of similarity obtains the matching defect sample of crystal to be measured and i-th kind of crystal, i.e. target class；
Step 9-4: repeating above procedure, until defect sample matches in the knowledge base to all crystalline, obtains
To the target class of crystal to be measured and all crystalline；
Step 9-5: with obtained target class building target matroid, carrying out brief inference to element in target matroid,
And calculate belief function；
Step 9-6: data fusion, fused basic belief function are carried out to belief function according to DS evidence fusion rule
Bel are as follows:
Bel=(M1, M2..., Mj..., Mn)
Wherein, MjFor the trust probability of j-th of target class；
Step 9-7: according to target class and its trust probability, the knowledge base defect sample of fused unknown crystal is calculated
This；
Step 9-8: new crystal knowledge base is established for unknown crystal, and the knowledge base defect sample of unknown crystal is put into
In new crystal knowledge base.
Step 10: calculate in the crystal knowledge base defect sample of the affiliated type of crystal to be measured with crystal peak graphic data to be measured
Maximum similarity value, and crystal defect type to be measured is determined according to maximum similarity value or establishes new crystal defect sample:
Step 10-1: it extracts and the congener crystal knowledge base defect sample of crystal phase to be measured；
Step 10-2: the crystal knowledge base defect sample structure of crystal peak graphic data to be measured and the affiliated type of crystal to be measured is utilized
At initial matrix；
Step 10-3: fuzzy equivalent matrix is obtained using fuzzy cluster analysis to initial matrix:
Step 10-4: according to fuzzy equivalent matrix calculate in the crystal knowledge base defect sample of the affiliated type of crystal to be measured with
The maximum value λ of crystal peak graphic data similarity to be measured*；
Step 10-5: defined threshold λ, if λ*>=λ, then the affiliated defect type of crystal to be measured be and crystal peak graphic data to be measured
Defect type belonging to the maximum defect sample of similarity；If λ*The peak shape data are then put by < λ as new defect sample
In the crystal knowledge base.
According to the method that Multifunctional X-ray direction finder carries out different crystal characteristic measurement, include the following steps:
Step 1: chip to be measured is placed on sample mounting table；
Step 2:X ray generator emits X-ray；
Step 3: scintillation detector acquires the X-ray of chip diffraction to be measured, and by the intensity-conversion of X-ray at pulse frequency
After signal, it is sent to signal conditioning module；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by signal conditioning module, is gone forward side by side
After line frequency presses conversion process, it is sent to sampler；
Step 5: the voltage analog that the signal conditioning module received exports is converted digital quantity i.e. peak shape by sampler
Data are sent to PLC control module；
Step 6: the title of crystal to be measured, this measuring surface of crystal to be measured, crystal to be measured are set by industrial PC machine
Theoretical peak angle and this measurement scanning angle range, and be sent to PLC control module；
Step 7:PLC control module drives the rotation of sample mounting table by driving device for step-by-step, meanwhile, PLC control
The peak shape data that the sampler received is sent are sent to industrial PC machine by module；
Step 8: industrial PC machine sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 9: amendment peak-shaped curve, and peak-shaped curve angular error is eliminated, obtain standard peak-shaped curve；
Step 10: feature being extracted according to standard peak-shaped curve, and is stored and is shown.
Manual orientation method for measuring is carried out using Multifunctional X-ray direction finder, is included the following steps:
Step 1: chip to be measured is placed on sample mounting table；
Step 2:X ray generator emits X-ray；
Step 3: scintillation detector acquires the X-ray of chip diffraction to be measured, and by the intensity-conversion of X-ray at pulse frequency
After signal, it is sent to signal conditioning module；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by signal conditioning module, is gone forward side by side
After line frequency presses conversion process, it is sent to sampler；
Step 5: the voltage analog that the signal conditioning module received exports is converted digital quantity i.e. peak shape by sampler
Data are sent to PLC control module；
Step 6: handwheel control sample mounting table rotation is shaken manually, meanwhile, the peak that PLC sends the sampler received
Graphic data is sent to industrial PC machine；
Step 7: industrial PC machine sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 8: judge whether peak-shaped curve reaches maximum value, be, eliminates peak-shaped curve angular error, and execute step 9,
Otherwise, return step 6 continue to shake handwheel；
Step 9: feature being extracted according to peak-shaped curve, and is stored and is shown.
The method for being carried out obtaining angular error using Multifunctional X-ray direction finder, is included the following steps:
Step 1: the chip of known standard angle is placed on sample mounting table；
Step 2:X ray generator emits X-ray；
Step 3: scintillation detector acquires the X-ray of chip diffraction to be measured, and by the intensity-conversion of X-ray at pulse frequency
After signal, it is sent to signal conditioning module；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by signal conditioning module, is gone forward side by side
After line frequency presses conversion process, it is sent to sampler；
Step 5: the voltage analog that the signal conditioning module received exports is converted digital quantity i.e. peak shape by sampler
Data are sent to PLC control module；
Step 6: the title of crystal to be measured, this measuring surface of crystal to be measured, crystal to be measured are set by industrial PC machine
Theoretical peak angle and this measurement scanning angle range, and be sent to PLC control module；
Step 7:PLC control module drives the rotation of sample mounting table by driving device for step-by-step or manually controls sample
Mounting table rotation, meanwhile, the peak shape data that the sampler received is sent are sent to industrial PC machine by PLC control module；
Step 8: industrial PC machine sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 9: calculating the difference that peak-shaped curve reaches corresponding angle and chip standard angle when maximum value, as angle is missed
Difference.
The utility model has the advantages that of the invention a kind of the method for crystal non-destructive testing and existing is carried out using Multifunctional X-ray direction finder
Having technology to compare has following advantage:
(1) present invention integrates a variety of monocrystal X-ray orientation device measuring systems, and this integrated design reaches
Reduction equipment cost ensures product consistency, significantly improves production efficiency purpose；
(2) fusion arrangement is carried out to the data of each monocrystal material detection, and intelligent decision is carried out to it, according to current measurement
Data, intelligently obtain the defect type of monocrystal material, and then reach in the case where no mass data is supported, according to known list
The related data of brilliant material can deduce the requirement of the correlated characteristic of certain new single-crystal material, substantially increase the benefit of data with existing
With efficiency, artificial judgment error is reduced；
(3) use scintillation detector as X-ray detector, stability is higher, and strong antijamming capability compensates for Geiger tube
Reception signal is weaker, and output pulse waveform is nonstandard, and clutter is more, is disturbed serious deficiency.
Detailed description of the invention
Structural schematic diagram of the Fig. 1 for a kind of Multifunctional X-ray direction finder of one embodiment of the present invention, 1 workbench, 2
Radiation protection hood, 3X ray high voltage power supply, 4X ray generator bracket, 5X ray generator, 6 monochromators, 7 flash detections
Device, 8 scintillation detector brackets, 9 signal conditioning modules, 10 stepper motors, 11 driving device for step-by-step, 12 rotation axis, 13 hands
Wheel, 14 sample mounting tables, 15 air exhausters, 16 bolts, 17 samplers, 18PLC control module, 19 industrial PC machine, 20 printers,
21 crystal to be measured；
Fig. 2 is the circuit diagram of the signal conditioning module of one embodiment of the present invention；
Fig. 3 is the square sample loading table schematic diagram of one embodiment of the present invention, 22 racks, 23 stomata walls；
Fig. 4 is the circular sample loading table schematic diagram of one embodiment of the present invention；
Fig. 5 is the adjustable square sample loading table schematic diagram of stomata wall gradient of one embodiment of the present invention, and 24 tiltedly
Spend regulation cock；
Fig. 6 is the adjustable circular sample loading table schematic diagram of stomata wall gradient of one embodiment of the present invention；
Fig. 7 is the rocking curve determination system flow chart of one embodiment of the present invention；
Fig. 8 is the monocrystal parametric measurement system flow chart of one embodiment of the present invention；
Fig. 9 is that the SC cut type of one embodiment of the present invention measures system flow chart；
Figure 10 is that the silicon single crystal of one embodiment of the present invention measures system flow chart；
Figure 11 is that the semi-automatic direction finder of one embodiment of the present invention measures system flow chart；
Figure 12 is the crystal defect recognition methods flow chart of one embodiment of the present invention；
Figure 13 is DS evidence fusion process flow diagram flow chart in the crystal defect recognition methods of one embodiment of the present invention；
Figure 14 is fuzzy cluster analysis process flow diagram flow chart in the crystal defect recognition methods of one embodiment of the present invention；
Figure 15 is the manual orientation instrument measuring method flow chart of one embodiment of the present invention；
Figure 16 is the automatic acquisition angular error method flow diagram of one embodiment of the present invention；
Figure 17 is the manual acquisition angular error method flow diagram of one embodiment of the present invention.
Specific embodiment
It elaborates with reference to the accompanying drawing to one embodiment of the present invention.
A kind of Multifunctional X-ray direction finder of present embodiment, as shown in Figure 1, comprising:
Workbench 1, radiation protection hood 2, X-ray generating system, diffracted ray receive system, crystal prototype turntable and meter
Calculate machine control system；
Radiation protection hood 2 is equipped with above the workbench 1；
The X-ray generating system includes: X-ray high voltage power supply 3, X-ray emitter bracket 4, X-ray emitter 5
With monochromator 6, X-ray is arranged with high voltage power supply 3 to be connect below workbench 1, and with X-ray emitter 5, X-ray emitter 5
It is fixed on workbench 1 by X-ray emitter bracket 4, monochromator 6 is fixed in X-ray emitter 5, the outlet of X-ray tube
Radiation exposure removes K on monochromator 6βAnd successive line, the remaining K compared with monochromatizationαRadiation exposure is rotated in sample wafer
On tested chip 21 on platform, and met at a bit with tested 21 center of chip；
It includes scintillation detector 7, scintillation detector bracket 8 and signal conditioning module 9, flashing that the diffracted ray, which receives system,
Detector 7 is fixed on workbench 1 by scintillation detector bracket 8, and scintillation detector 7 is for receiving 21 diffraction of chip to be measured
X-ray, and by the intensity-conversion of received X-ray at corresponding pulse duration frequency signal, the output end and letter of scintillation detector 7
The input terminal DIN connection of number conditioning module 9, as shown in Fig. 2, the pulse duration frequency signal that scintillation detector 7 exports passes through signal tune
Reason modular circuit is filtered, amplifies, comparing, digital buffer, integral amplify and filtering is followed after handling and exported.
The crystal prototype turntable include stepper motor 10, driving device for step-by-step 11, rotation axis 12, handwheel 13,
Sample mounting table 14, air exhauster 15 and bolt 16, stepper motor 10 and driving device for step-by-step 11 are set under workbench 1
Side, driving device for step-by-step 11 are connected with stepper motor 10, and stepper motor 10 passes through rotation axis 12 and 14 phase of sample mounting table
Even, handwheel 13 is connected with rotation axis 12, and sample mounting table 14 is fixed in rotation axis 12 by bolt 16, air exhauster 15 and sample
Mounting table 14 connects；
The sample mounting table 14 is replaced by demounting bolt 16.
The computer control system includes sampler 17, PLC control module 18, industrial PC machine 19 and printer 20,
The industrial PC machine 19 is provided with rocking curve determination system, monocrystal parametric measurement system, and SC cut type measures system, silicon
Monocrystalline measures system, and semi-automatic direction finder measures system, and manual orientation instrument measures system and crystal defect identifying system；Sampling
The sampling end of device 17 is connected with the output end VOUT of signal conditioning module 9 shown in Fig. 2, the output end and PLC of sampler 17
18 input terminal of control module is connected, and 18 output end of PLC control module is connected with driving device for step-by-step 11, industrial PC machine
19 are connected with PLC control module 18, and industrial PC machine 19 is substantially carried out data processing, model calculating, feature extraction, display, beats
Systematic survey relevant parameter is passed through serial communication by functions, the industrial PC machine 19 such as print, storage, defect recognition and parameter setting
It is transmitted to PLC control module 18, pulse control stepper motor 10 is exported by PLC control module 18 and is rotated；Printer 20 and industry
It is connected with PC machine 19, for printing peak type curve and crystal characteristic testing result.
As shown in Fig. 3 to Fig. 6, the sample mounting table includes rack 22 and stomata wall 23, and rack 22 is solid by bolt 16
It is scheduled in rotation axis 12, the stomata in stomata wall 23 is connected with air exhauster 15, and different according to chip to be measured, sample mounting table has more
Kind, as shown in figure 3, the rack 22 of sample mounting table and 23 angle of stomata wall are 90 °, stomata wall 23 is with the chip to be measured that holds
Width W is identical with height H；As shown in figure 4, the rack 22 of sample mounting table and 23 angle of stomata wall are 90 °, stomata wall 23 is with containing
The radius R for the chip to be measured put is identical；As shown in figure 5, being equipped with gradient tune between the rack 22 and stomata wall 23 of sample mounting table
Bolt 24 is saved, angle is adjustable between rack 22 and stomata wall 23, and stomata wall 23 is with the width W and height H phase of the chip to be measured held
Together；As shown in fig. 6, being equipped with pitch adjustment bolt 24 between the rack 22 and stomata wall 23 of sample mounting table, stomata wall 23 is with holding
Chip to be measured radius R it is identical.
The rocking curve determination system, as shown in fig. 7, scintillation detector acquires the X-ray of chip diffraction to be measured, concurrently
Signal conditioning module processing is given, the voltage analog that signal conditioning module exports is converted peak shape data, PLC control by sampler
The rotation of sample preparation product mounting table, while peak shape data are sent to industrial PC machine, industrial PC machine obtains peak according to peak shape data
Shape curve is modified obtained peak-shaped curve using swing curve characteristic model, after obtaining the swing curve of standard, according to
The swing curve of standard extracts feature: half peak breadth, peak angle and peak height, repeats n times aforesaid operations, and will close
Key feature half peak breadth stores after being averaged and display.
The monocrystal parametric measurement system, as shown in figure 8, scintillation detector acquires the X-ray of chip diffraction to be measured, and
It is sent to signal conditioning module processing, the voltage analog that signal conditioning module exports is converted peak shape data, PLC by sampler
The rotation of sample mounting table is controlled, while peak shape data are sent to industrial PC machine, industrial PC machine is obtained according to peak shape data
Peak-shaped curve is modified obtained peak-shaped curve using monocrystal parameter attribute model, after obtaining the peak-shaped curve of standard,
Feature: peak angle and peak height is extracted according to the peak-shaped curve of standard, repeats n times aforesaid operations, and will be crucial special
Sign peak angle stores after being averaged and display.
The SC cut type measures system, as shown in figure 9, scintillation detector acquires the X-ray of chip diffraction to be measured, and sends
Signal conditioning module processing is given, the voltage analog that signal conditioning module exports is converted peak shape data, PLC control by sampler
The rotation of sample mounting table, while peak shape data are sent to industrial PC machine, industrial PC machine obtains peak shape according to peak shape data
Curve is modified obtained peak-shaped curve using SC cut type characteristic model, after obtaining the peak-shaped curve of standard, according to standard
Peak-shaped curve extract feature: peak angle and peak height, repeat n times aforesaid operations, and by key feature peak angle
Degree stores after being averaged and display.
The silicon single crystal measures system, and as shown in Figure 10, scintillation detector acquires the X-ray of chip diffraction to be measured, concurrently
Signal conditioning module processing is given, the voltage analog that signal conditioning module exports is converted peak shape data, PLC control by sampler
The rotation of sample preparation product mounting table, while peak shape data are sent to industrial PC machine, industrial PC machine obtains peak according to peak shape data
Shape curve is modified obtained peak-shaped curve using silicon single crystal parameter attribute model, after obtaining the peak-shaped curve of standard, root
Feature: peak angle and peak height is extracted according to the peak-shaped curve of standard, repeats n times aforesaid operations, and by key feature
Peak angle stores after being averaged and display；Judge whether to need replacing chip measuring surface, be, replaces weight after chip measuring surface
The multiple above operation, no, detection terminates.
The semi-automatic direction finder measures system, and as shown in figure 11, the X that scintillation detector acquires chip diffraction to be measured is penetrated
Line, and it is sent to signal conditioning module processing, the voltage analog that signal conditioning module exports is converted peak shape number by sampler
According to PLC controls the rotation of sample mounting table, while peak shape data are sent to industrial PC machine, and industrial PC machine is according to peak shape number
According to peak-shaped curve is obtained, obtained peak-shaped curve is modified, it is bent according to the peak shape of standard after obtaining the peak-shaped curve of standard
Line drawing feature: peak angle and peak height repeat n times aforesaid operations, and key feature peak angle are averaged
It stores and shows after value.
The manual orientation instrument measures system, and scintillation detector acquires the X-ray of chip diffraction to be measured, and is sent to signal
The voltage analog that signal conditioning module exports is converted peak shape data by conditioning module processing, sampler, shakes handwheel control
The rotation of sample mounting table, meanwhile, peak shape data are sent to industrial PC machine by PLC, and PC machine obtains peak shape song according to peak shape data
Line is modified obtained peak-shaped curve, after obtaining the peak-shaped curve of standard, extracts feature according to the peak-shaped curve of standard:
Peak angle and peak height, and key feature peak angle is stored and shown.
The crystal defect identifying system, scintillation detector acquire the X-ray of chip diffraction to be measured, and are sent to signal tune
Resume module is managed, the voltage analog that signal conditioning module exports is converted peak shape data by sampler, and PLC controls sample and places
Platform rotation, while peak shape data are sent to industrial PC machine, industrial PC machine obtains peak-shaped curve according to peak shape data, if
Crystal to be measured is unknown crystal, and industrial PC machine calculates the matching defect in every kind of crystal knowledge base defect sample with crystal to be measured
Sample, and matching defect sample is subjected to data fusion, obtain the knowledge base defect sample of the crystal to be measured；Every kind of crystal
Peak shape data, that is, defect sample of different defect types in knowledge base comprising this kind of crystal；If crystal to be measured is known crystalline substance
Body calculates the maximum similarity in the crystal knowledge base defect sample of the affiliated type of crystal to be measured with crystal peak graphic data to be measured
Value, and crystal defect type to be measured is determined according to maximum similarity value or establishes new crystal defect sample.
As shown in figure 12, crystal defect is carried out using Multifunctional X-ray direction finder and know method for distinguishing, include the following steps:
Step 1: chip to be measured is placed on sample mounting table；
Step 2:X ray generator emits X-ray；
Step 3: scintillation detector acquires the X-ray of chip diffraction to be measured, and by the intensity-conversion of X-ray at pulse frequency
After signal, it is sent to signal conditioning module；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by signal conditioning module, is gone forward side by side
After line frequency presses conversion process, it is sent to sampler；
Step 5: the voltage analog that the signal conditioning module received exports is converted digital quantity i.e. peak shape by sampler
Data are sent to PLC control module；
Step 6: the title of crystal to be measured, this measuring surface of crystal to be measured, crystal to be measured are set by industrial PC machine
Theoretical peak angle and this measurement scanning angle range, and be sent to PLC control module；
Step 7:PLC control module drives the rotation of sample mounting table by driving device for step-by-step, meanwhile, PLC control
The peak shape data that the sampler received is sent are sent to industrial PC machine by module；
Step 8: if chip to be measured is unknown crystal, thening follow the steps 9, otherwise, execute step 10；
Step 9: industrial PC machine calculates the matching defect sample in every kind of crystal knowledge base defect sample with crystal to be measured,
And matching defect sample is subjected to data fusion, obtain the knowledge base defect sample of the crystal to be measured；Every kind of crystal knowledge
Peak shape data, that is, defect sample of different defect types in library comprising this kind of crystal:
Step 9-1: extracting i-th kind of crystal knowledge base defect sample and chip peak shape data to be measured constitute initial matrix；
Step 9-2: fuzzy equivalent matrix R is obtained using fuzzy cluster analysis to initial*:
Step 9-3: according to R*It obtains highest with crystal peak graphic data similarity to be measured in crystal knowledge base defect sample
Defect type, i.e., the matching defect type of crystal to be measured and i-th kind of crystal, i.e. target class；
Step 9-4: repeating above procedure, until the knowledge base to all crystalline matches, obtains crystal to be measured
With the target class of all crystalline；
Step 9-5: as shown in figure 13, constructing target matroid with obtained target class, to element in target matroid into
Row brief inference, and belief function is calculated, method particularly includes:
Step 9-5-1: building target matroidWherein,For target class, n*For
Target class quantity, X* j=[x* 1j, x* 2j..., x* mj]T, x* 1j, x* 2j..., x* mjIt is former for m characteristic trait of j-th of target class
Beginning data matrix indicates are as follows:
Remember each behavior in target matroid θ:Wherein i=1,2 ..., m；
Step 9-5-2: present embodiment is standardized using maximum value standardized method, obtains normal data square
Battle array are as follows:
WhereinN=max { x* i1, x* i2..., x* in, j=1,2 ..., n*；
Step 9-5-3: basic brief inference matrix are as follows:
Wherein, basic brief inference function:
Step 9-5-4: belief function:
Step 9-6: data fusion, fused basic belief function are carried out to belief function according to DS evidence fusion rule
Bel are as follows:
Wherein, MjFor j-th of target class x* jTrust probability；
In present embodiment, the calculation method of basic belief function Bel are as follows: setWithFused letter
Spend function are as follows:Wherein:
Step 9-7: according to target class and its trust probability, the knowledge base sample of fused unknown crystal is calculated
X*:
Wherein, xi *For the ith feature character value of the knowledge base defect sample of crystal to be measured；
Step 9-8: new knowledge base is established for unknown crystal, and the knowledge base defect sample of unknown crystal is put into knowledge
In library；
Step 10: calculate in the crystal knowledge base defect sample of the affiliated type of crystal to be measured with crystal peak graphic data to be measured
Maximum similarity value, and crystal defect type to be measured is determined according to maximum similarity value or establishes new crystal defect sample:
Step 10-1: it extracts and the congener crystal knowledge base defect sample of crystal phase to be measured；
Step 10-2: the crystal knowledge base defect sample structure of crystal peak graphic data to be measured and the affiliated type of crystal to be measured is utilized
At initial matrix；
Step 10-3: fuzzy equivalent matrix R is obtained using fuzzy cluster analysis to initial matrix*；
Step 10-4: according to fuzzy equivalent matrix calculate in the crystal knowledge base defect sample of the affiliated type of crystal to be measured with
The maximum value λ of crystal peak graphic data similarity to be measured*；
Step 10-5: defined threshold λ, if λ*>=λ, then the affiliated defect type of crystal to be measured be and crystal peak graphic data to be measured
Defect type belonging to the maximum defect sample of similarity；If λ*The peak shape data are then put by < λ as new defect sample
In the crystal knowledge base.
As shown in figure 14, the fuzzy cluster analysis process includes the following steps:
(1) its domain is set are as follows:
Wherein, X1For crystal peak graphic data to be measured,For defect sample in crystal knowledge base；xi*1..., xi*mForM characteristic trait, i*=1,2 ..., n, j*=1,
2 ..., m；Obtain raw data matrix:
(2) present embodiment is standardized U using maximum value standardized method, obtains canonical matrix:
Wherein,
(3) fuzzy similarity matrix R is established using correlation coefficient process:
Wherein,
(4) transitive closure is sought using quadratic method, then seeks fuzzy equivalent matrix R with transitive closure*, i.e.,
WhenWhen,
In present embodiment, the method for Multifunctional X-ray direction finder progress different crystal characteristic measurement is utilized, comprising:
Step 1: chip to be measured is placed on sample mounting table；
Step 2:X ray generator emits X-ray；
Step 3: scintillation detector acquires the X-ray of chip diffraction to be measured, and by the intensity-conversion of X-ray at pulse frequency
After signal, it is sent to signal conditioning module；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by signal conditioning module, is gone forward side by side
After line frequency presses conversion process, it is sent to sampler；
Step 5: the voltage analog that the signal conditioning module received exports is converted digital quantity i.e. peak shape by sampler
Data are sent to PLC control module；
Step 6: this survey of detection number of operations n, the title of crystal to be measured, crystal to be measured is set by industrial PC machine
Amount face, the theoretical peak angle of crystal to be measured and this measurement scanning angle range, and be sent to PLC control module；
Step 7:PLC control module drives the rotation of sample mounting table by driving device for step-by-step, meanwhile, PLC control
The peak shape data that the sampler received is sent are sent to industrial PC machine by module；
Step 8: industrial PC machine sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 9: amendment peak-shaped curve, and peak-shaped curve angular error is eliminated, obtain standard peak-shaped curve；
Step 10: feature, including half peak breadth, peak angle and peak height are extracted according to standard peak-shaped curve；
Step 11: judging whether to reach detection number of operations n, be deposited after the key feature average value being calculated
Storage and display, execute step 12；It is no, then follow the steps 1；
Step 12: judging whether to replace chip, be, replace chip, and execute step 1；No, detection terminates；
As shown in figure 15, manual orientation method for measuring is carried out using Multifunctional X-ray direction finder, included the following steps:
Step 1: chip to be measured is placed on sample mounting table；
Step 2:X ray generator emits X-ray；
Step 3: scintillation detector acquires the X-ray of chip diffraction to be measured, and by the intensity-conversion of X-ray at pulse frequency
After signal, it is sent to signal conditioning module；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by signal conditioning module, is gone forward side by side
After line frequency presses conversion process, it is sent to sampler；
Step 5: the voltage analog that the signal conditioning module received exports is converted digital quantity i.e. peak shape by sampler
Data are sent to PLC control module；
Step 6: handwheel control sample mounting table rotation is shaken manually, meanwhile, the peak that PLC sends the sampler received
Graphic data is sent to industrial PC machine；
Step 7: industrial PC machine sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 8: judging whether peak-shaped curve reaches maximum value, be, execute step 9, otherwise, continue to shake handwheel；
Step 9: feature being extracted according to peak-shaped curve, and is stored and is shown；
Step 10: judging whether to replace chip, be, eliminate peak-shaped curve angular error, and replace chip, and execute step
1；No, detection terminates.
As shown in figure 16, the automatic method for obtaining angular error is carried out using Multifunctional X-ray direction finder, including walked as follows
It is rapid:
Step 1: the chip of known standard angle is placed on sample mounting table；
Step 2:X ray generator emits X-ray；
Step 3: scintillation detector acquires the X-ray of chip diffraction to be measured, and by the intensity-conversion of X-ray at pulse frequency
After signal, it is sent to signal conditioning module；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by signal conditioning module, is gone forward side by side
After line frequency presses conversion process, it is sent to sampler；
Step 5: the voltage analog that the signal conditioning module received exports is converted digital quantity i.e. peak shape by sampler
Data are sent to PLC control module；
Step 6: the title of crystal to be measured, this measuring surface of crystal to be measured, crystal to be measured are set by industrial PC machine
Theoretical peak angle and this measurement scanning angle range, and be sent to PLC control module；
Step 7:PLC control module drives the rotation of sample mounting table by driving device for step-by-step, meanwhile, PLC control
The peak shape data that the sampler received is sent are sent to industrial PC machine by module；
Step 8: industrial PC machine sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 9: calculating the difference that peak-shaped curve reaches corresponding angle and chip standard angle when maximum value, as angle is missed
Difference.
After the operation of present embodiment alignment is executes 6 calibration operations, angular error average value is taken, such as: standard angle
Degree is 13 ° 20 ' 00 ", if the peak-peak corresponding angle of 6 operations is 13 ° 20 ' 05 ", i.e., angular error is+5 ", it is examined
When surveying operation, angle value in peak shape data is subtracted 5, and " angular error eliminates the systematic error generated by mechanical structure, improves and surveys
Measure accuracy.
As shown in figure 17, the method for obtaining angular error manually is carried out using Multifunctional X-ray direction finder, including walked as follows
It is rapid:
Step 1: the chip of known standard angle is placed on sample mounting table；
Step 2:X ray generator emits X-ray；
Step 3: scintillation detector acquires the X-ray of chip diffraction to be measured, and by the intensity-conversion of X-ray at pulse frequency
After signal, it is sent to signal conditioning module；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by signal conditioning module, is gone forward side by side
After line frequency presses conversion process, it is sent to sampler；
Step 5: the voltage analog that the signal conditioning module received exports is converted digital quantity i.e. peak shape by sampler
Data are sent to PLC control module；
Step 6: the title of crystal to be measured, this measuring surface of crystal to be measured, crystal to be measured are set by industrial PC machine
Theoretical peak angle and this measurement scanning angle range, and be sent to PLC control module；
Step 7: the rotation of sample mounting table is manually controlled, meanwhile, the peak that PLC control module sends the sampler received
Graphic data is sent to industrial PC machine；
Step 8: industrial PC machine sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 9: calculating the difference that peak-shaped curve reaches corresponding angle and chip standard angle when maximum value, as angle is missed
Difference.
Claims (6)
1. a kind of carry out crystal defect knowledge method for distinguishing, the Multifunctional X-ray direction finder packet using Multifunctional X-ray direction finder
Include: workbench, radiation protection hood, X-ray generating system, diffracted ray receive system, crystal prototype turntable and computer control
System processed；
Radiation protection hood is equipped with above the workbench；
The X-ray generating system includes: X-ray high voltage power supply, X-ray emitter bracket, X-ray emitter and monochrome
Device, X-ray is arranged with high voltage power supply to be connect below workbench, and with X-ray emitter, and X-ray emitter is sent out by X-ray
Raw device bracket is fixed, and monochromator is fixed in X-ray emitter on the table, so that X-ray emitter is issued radiation exposure and is existed
On monochromator, and the X-ray by monochromator filtering can be radiated at the center of chip to be measured on sample wafer turntable；
It includes scintillation detector, scintillation detector bracket and signal conditioning module that the diffracted ray, which receives system, for receive to
The scintillation detector for surveying the X-ray of chip diffraction is fixed on the table by scintillation detector bracket, scintillation detector and letter
The connection of number conditioning module, signal conditioning module are placed in below workbench；
The crystal prototype turntable includes stepper motor, driving device for step-by-step, rotation axis, handwheel, sample mounting table, takes out
Mechanism of qi and bolt, stepper motor and driving device for step-by-step are set to below workbench, driving device for step-by-step and stepping
Motor is connected, and stepper motor is connected by rotation axis with sample mounting table, and handwheel is connected with rotation axis, and sample mounting table passes through spiral shell
Bolt is fixed on the rotating shaft, and air exhauster is connect with sample mounting table；The sample mounting table includes rack and stomata wall, and rack is logical
It is fixed on the rotating shaft to cross bolt, sample mounting table can be replaced by demounting bolt, stomata and air exhauster in stomata wall
It is connected, stomata wall is identical with the wafer shape to be measured held；Gradient is equipped between the rack and stomata wall of the sample mounting table
Regulation cock, angle is adjustable between rack and stomata wall or the rack and stomata wall angle of the sample mounting table are 90 °；
The computer control system includes sampler, PLC control module, industrial PC machine, the sampling end and signal of sampler
Conditioning module is connected, and the output end of sampler is connected with PLC control module input terminal, PLC control module output end and step
It is connected into motor driver, industrial PC machine is connected with PLC control module；
Include the following steps: it is characterized in that, the crystal defect knows method for distinguishing
Step 1: chip to be measured is placed on sample mounting table；
Step 2:X ray generator emits X-ray；
Step 3: scintillation detector acquires the X-ray of chip diffraction to be measured, and by the intensity-conversion of X-ray at pulse duration frequency signal
Afterwards, it is sent to signal conditioning module；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by signal conditioning module, line frequency of going forward side by side
After pressing conversion process, it is sent to sampler；
Step 5: the voltage analog that the signal conditioning module received exports is converted digital quantity i.e. peak shape data by sampler,
It is sent to PLC control module；
Step 6: the title of crystal to be measured, this measuring surface of crystal to be measured, the reason of crystal to be measured are set by industrial PC machine
By the scanning angle range of peak angle and this measurement, and it is sent to PLC control module；
Step 7:PLC control module drives the rotation of sample mounting table by driving device for step-by-step, meanwhile, PLC control module
The peak shape data that the sampler received is sent are sent to industrial PC machine；
Step 8: if chip to be measured is unknown crystal, thening follow the steps 9, otherwise, execute step 10；
Step 9: industrial PC machine calculates the matching defect sample in every kind of crystal knowledge base defect sample with crystal to be measured, and will
It matches defect sample and carries out data fusion, obtain the knowledge base defect sample of the crystal to be measured；In every kind of crystal knowledge base
Peak shape data, that is, defect sample of different defect types comprising this kind of crystal；
Step 10: calculating the maximum in the crystal knowledge base defect sample of the affiliated type of crystal to be measured with crystal peak graphic data to be measured
Similarity value, and crystal defect type to be measured is determined according to maximum similarity value or establishes new crystal defect sample.
2. crystal defect according to claim 1 knows method for distinguishing, which is characterized in that step 9 specifically comprises the following steps:
Step 9-1: extracting i-th kind of crystal knowledge base defect sample and chip peak shape data to be measured constitute initial matrix；
Step 9-2: fuzzy equivalent matrix is obtained using fuzzy cluster analysis to initial matrix:
Step 9-3: it is obtained according to fuzzy equivalent matrix similar to the peak shape data of crystal to be measured in crystal knowledge base defect sample
Highest defect sample is spent, the matching defect sample of crystal to be measured and i-th kind of crystal, i.e. target class are obtained；
Step 9-4: repeating above procedure, until defect sample matches in the knowledge base to all crystalline, obtain to
Survey the target class of crystal and all crystalline；
Step 9-5: with obtained target class building target matroid, brief inference is carried out to element in target matroid, and count
Calculate belief function；
Step 9-6: data fusion, fused basic belief function Bel are carried out to belief function according to DS evidence fusion rule
Are as follows:
Bel=(M1, M2..., Mj..., Mn)
Wherein, MjFor the trust probability of j-th of target class；
Step 9-7: according to target class and its trust probability, the knowledge base defect sample of fused unknown crystal is calculated；
Step 9-8: establishing new crystal knowledge base for unknown crystal, and the knowledge base defect sample of unknown crystal is put into new
Crystal knowledge base.
3. crystal defect recognition methods according to claim 1, which is characterized in that step 10 specifically comprises the following steps:
Step 10-1: it extracts and the congener crystal knowledge base defect sample of crystal phase to be measured；
Step 10-2: it is constituted just using the crystal knowledge base defect sample of crystal peak graphic data to be measured and the affiliated type of crystal to be measured
Beginning matrix；
Step 10-3: fuzzy equivalent matrix is obtained using fuzzy cluster analysis to initial matrix:
Step 10-4: according to fuzzy equivalent matrix calculate in the crystal knowledge base defect sample of the affiliated type of crystal to be measured with it is to be measured
The maximum value λ of crystal peak graphic data similarity*；
Step 10-5: defined threshold λ, if λ*>=λ, then the affiliated defect type of crystal to be measured is similar to crystal peak graphic data to be measured
Spend defect type belonging to maximum defect sample；If λ*The peak shape data are then put into the crystalline substance as new defect sample by < λ
In body knowledge base.
4. the method for carrying out different crystal characteristic measurement using Multifunctional X-ray direction finder described in claim 1, feature exist
In including the following steps:
Step 1: chip to be measured is placed on sample mounting table；
Step 2:X ray generator emits X-ray；
Step 3: scintillation detector acquires the X-ray of chip diffraction to be measured, and by the intensity-conversion of X-ray at pulse duration frequency signal
Afterwards, it is sent to signal conditioning module；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by signal conditioning module, line frequency of going forward side by side
After pressing conversion process, it is sent to sampler；
Step 5: the voltage analog that the signal conditioning module received exports is converted digital quantity i.e. peak shape data by sampler,
It is sent to PLC control module；
Step 6: the title of crystal to be measured, this measuring surface of crystal to be measured, the reason of crystal to be measured are set by industrial PC machine
By the scanning angle range of peak angle and this measurement, and it is sent to PLC control module；
Step 7:PLC control module drives the rotation of sample mounting table by driving device for step-by-step, meanwhile, PLC control module
The peak shape data that the sampler received is sent are sent to industrial PC machine；
Step 8: industrial PC machine sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 9: amendment peak-shaped curve, and peak-shaped curve angular error is eliminated, obtain standard peak-shaped curve；
Step 10: feature being extracted according to standard peak-shaped curve, and is stored and is shown.
5. carrying out manual orientation method for measuring using Multifunctional X-ray direction finder described in claim 1, which is characterized in that
Include the following steps:
Step 1: chip to be measured is placed on sample mounting table；
Step 2:X ray generator emits X-ray；
Step 3: scintillation detector acquires the X-ray of chip diffraction to be measured, and by the intensity-conversion of X-ray at pulse duration frequency signal
Afterwards, it is sent to signal conditioning module；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by signal conditioning module, line frequency of going forward side by side
After pressing conversion process, it is sent to sampler；
Step 5: the voltage analog that the signal conditioning module received exports is converted digital quantity i.e. peak shape data by sampler,
It is sent to PLC control module；
Step 6: handwheel control sample mounting table rotation is shaken manually, meanwhile, the peak shape number that PLC sends the sampler received
According to being sent to industrial PC machine；
Step 7: industrial PC machine sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 8: judge whether peak-shaped curve reaches maximum value, be, eliminates peak-shaped curve angular error, and execute step 9, it is no
Then, return step 6 continue to shake handwheel；
Step 9: feature being extracted according to peak-shaped curve, and is stored and is shown.
6. the method for carrying out obtaining angular error using Multifunctional X-ray direction finder described in claim 1, which is characterized in that
Include the following steps:
Step 1: the chip of known standard angle is placed on sample mounting table；
Step 2:X ray generator emits X-ray；
Step 3: scintillation detector acquires the X-ray of chip diffraction to be measured, and by the intensity-conversion of X-ray at pulse duration frequency signal
Afterwards, it is sent to signal conditioning module；
Step 4: the pulse duration frequency signal that scintillation detector exports is amplified filter shape by signal conditioning module, line frequency of going forward side by side
After pressing conversion process, it is sent to sampler；
Step 5: the voltage analog that the signal conditioning module received exports is converted digital quantity i.e. peak shape data by sampler,
It is sent to PLC control module；
Step 6: the title of crystal to be measured, this measuring surface of crystal to be measured, the reason of crystal to be measured are set by industrial PC machine
By the scanning angle range of peak angle and this measurement, and it is sent to PLC control module；
Step 7:PLC control module drives the rotation of sample mounting table or manually controls sample and places by driving device for step-by-step
Platform rotation, meanwhile, the peak shape data that the sampler received is sent are sent to industrial PC machine by PLC control module；
Step 8: industrial PC machine sends peak shape data according to PLC control module and obtains peak-shaped curve；
Step 9: calculating the difference that peak-shaped curve reaches corresponding angle and chip standard angle when maximum value, as angular error.
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| CN107748171B (en) * | 2017-10-25 | 2020-04-24 | 哈尔滨工业大学 | Method for eliminating mounting error of optical crystal ultra-precision machining sub-surface damage detection sample |
| CN108152852B (en) * | 2017-12-12 | 2020-02-14 | 中国计量科学研究院 | Adjustable single crystal monochromator |
| CN108508046B (en) * | 2018-03-27 | 2021-05-18 | 东北大学 | Method for receiving and processing diffraction signal |
| CN108613641B (en) * | 2018-07-23 | 2019-11-12 | 安徽创谱仪器科技有限公司 | Two-dimentional orientation error precision measurement method for thin plate crystals |
| CN109034262B (en) * | 2018-08-13 | 2021-08-31 | 东北大学 | Batch processing method for defect identification of X-ray orientation instrument |
| CN109387531B (en) * | 2018-10-31 | 2022-11-15 | 宁波英飞迈材料科技有限公司 | Diffraction extinction swing curve imaging measurement device and method |
| CN113433146B (en) * | 2021-07-23 | 2022-05-27 | 深圳先进电子材料国际创新研究院 | Crystal orientation method, crystal orientation device and crystal processing method |
| CN113945591B (en) * | 2021-09-14 | 2023-10-24 | 中国电子科技集团公司第十一研究所 | Half-peak width automatic test fixture |
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