CN106124064A - Thin film radiation heat flow transducer and preparation method thereof - Google Patents
Thin film radiation heat flow transducer and preparation method thereof Download PDFInfo
- Publication number
- CN106124064A CN106124064A CN201610390008.2A CN201610390008A CN106124064A CN 106124064 A CN106124064 A CN 106124064A CN 201610390008 A CN201610390008 A CN 201610390008A CN 106124064 A CN106124064 A CN 106124064A
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- substrate
- film thermocouple
- electrode
- heat flow
- thin film
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- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 230000005855 radiation Effects 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000010408 film Substances 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 21
- 239000011888 foil Substances 0.000 claims description 14
- 238000001259 photo etching Methods 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 239000002390 adhesive tape Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000005619 thermoelectricity Effects 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- JXASPPWQHFOWPL-UHFFFAOYSA-N Tamarixin Natural products C1=C(O)C(OC)=CC=C1C1=C(OC2C(C(O)C(O)C(CO)O2)O)C(=O)C2=C(O)C=C(O)C=C2O1 JXASPPWQHFOWPL-UHFFFAOYSA-N 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 14
- 238000005259 measurement Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000035800 maturation Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 229960000935 dehydrated alcohol Drugs 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000004907 flux Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
- G01J2005/123—Thermoelectric array
Abstract
The invention discloses a kind of thin film radiation heat flow transducer and preparation method thereof.The film thermocouple array 2 including substrate 1, being located in substrate 1, the thermoresistance layer 3 being located on film thermocouple array 2；Film thermocouple array 2 is in series by outer contact 11 by plural film thermocouple, and film thermocouple is connected by A electrode 9 and B electrode 10 and forms；Two adjacent outer contacts 11 are provided with thermoresistance layer 3；Two external connection end of film thermocouple array 2 connect through the compensating wire 14 that pad 13 is corresponding with each self-electrode respectively.The heat flow transducer of the present invention uses existing maturation process technology and material, and production technology is simple, with low cost, has good certainty of measurement.
Description
Technical field
The invention belongs to thin film special sensor technical field, be specifically related to a kind of based on coating technique and photoetching technique
Thin film sensor and preparation method thereof.
Background technology
During science and technology, commercial production, engineering-built, heat flow is being transmitted in many ways, most common
Three kinds of transfer modes be respectively heat conduction, convection current and radiation.Along with the development of modern science and technology, the measurement technology of heat flow density
All the more paid close attention to by people.In the field of heat analysis supervision, the necessity of Heat flux calculation has been taken seriously and has confirmed, phase
The heat-flow measurement method answered has obtained bigger development and universal application.Abroad develop in terms of radiant heat flux density measure
A lot of novel sensors, the progress of new material development and processing technology level is provided for technical support, but in state
Interior also in the situation relatively fallen behind.
At present actual industrial production use most common radiant heat flux sensor mainly to have: circle foil (Gordon's meter), plug
Formula (Schmidt Boelter meter), metal derby formula etc..Circular foil heat flux transducer most widely used, feature is in response to fast
Speed, measurement broad quantum, longevity of service, but a disadvantage is that volume is big, be not suitable for some short space.Plug thermal-flow sensor
Device is generally used for measuring in the environment of full hot-fluid, but because its structure is complicated, uses be not as more extensive as circle foil, and respond
Speed is slower.Overall structure and the processing technology of metal derby formula heat flow transducer are relatively simple, and shortcoming is can not be in some occasion
Measurement, and output signal the most for a long time and the radiant heat flux not direct proportionality of loading, need to install additional computing module, unfavorable
Reduced Design in equipment.
Summary of the invention
It is an object of the invention to provide a kind of novel thin film radiation heat flow transducer and preparation method thereof, it is possible to achieve
Measurement to thermal source radiant heat flux density, this heat flow transducer uses existing maturation process technology and material, production technology
Simply, with low cost, there is good certainty of measurement.
The technical solution realizing the object of the invention is: a kind of thin film radiation heat flow transducer, including substrate 1, is located at
Film thermocouple array 2 in substrate 1, the thermoresistance layer 3 being located on film thermocouple array 2；Film thermocouple array 2 is by two
Above film thermocouple is in series by outer contact 11, and film thermocouple is connected by A electrode 9 and B electrode 10 and forms；Adjacent
Two outer contacts 11 be provided with thermoresistance layer 3；Two external connection end of film thermocouple array 2 are respectively through pad 13 and each self-electrode
Corresponding compensating wire 14 connects.
The preparation method of a kind of thin film radiation heat flow transducer, comprises the following steps:
(1) substrate is cleaned；
(2) coating photoresist post-drying photoresist；
(3) substrate and glass mask plate are put on litho machine planet carrier, carry out photoetching, prepare the light needle drawing of A electrode 9
Shape；
(4) substrate is put into coater example platform, at the metal level of substrate surface deposition film thermocouple A electrode 9；
(5) coat photoresist and dry photoresist；
(6) substrate and glass mask plate are put on litho machine planet carrier, carry out photoetching, prepare the light needle drawing of B electrode 10
Shape；
(7) substrate is put into coater example platform, at the metal level of substrate surface deposition film thermocouple B electrode 10；
(8) two external connection end of film thermocouple array are used conduction with each self-corresponding compensating wire respectively at pad
Glue is connected；
(9) paste one layer of aluminum foil and adhesive tape at substrate surface, and contact covers the aluminum foil and adhesive tape of equal thickness more outside.
The present invention compared with prior art, its remarkable advantage: (1) present invention use maturation Technology and material, heat
Resistance layer uses the aluminum foil material that reflectance is high that the temperature of sensor itself can be greatly reduced so that it is applicable temperature range is more
Extensively；(2) present invention uses the micromachining technologies such as magnetron sputtering technology, photoetching process, glass mask technique, is conducive to
Improving concordance and the reliability level of working sensor of processing technique, the batch that can realize thin film radiation heat flow transducer is raw
Produce, effectively reduce manufacturing cost；(3) present invention utilizes micromachining technology can prepare in a piece of substrate more simultaneously
Thermocouple, improves the certainty of measurement of thin film radiation heat flow transducer, improves working (machining) efficiency, is substantially reduced manufacturing cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of thin film radiation heat flow transducer of the present invention.
Fig. 2 is the structural representation of thermoelectricity double-layer of the present invention.
Detailed description of the invention
Seeing Fig. 1, described thin film radiation heat flow transducer includes substrate 1, the film thermocouple array being located in substrate 1
2, the thermoresistance layer 3 being located on film thermocouple array；Described film thermocouple array sees Fig. 2, two or more include A electrode
The film thermocouple of 9 and B electrodes 10 is in series by outer contact 11；Described outer contact 11 and junction point 12 are provided with in Fig. 1
Thermoresistance layer 7；The thermoresistance layer 8 that described outer contact 11 is provided with in Fig. 1；Two of the array of described film thermocouple composition external
End is connected with each self-corresponding compensating wire 14 through a pad 13 respectively；12 nodes in 4 node corresponding diagram 2 in Fig. 1, figure
11 nodes in 5 node corresponding diagram 2 in 1；6 lines in Fig. 1 are film thermocouple wire.
Wherein, described substrate 1 material is Si, Sio2, polyimide flex material, preferably polyimide flex material, its
A size of 20mm × 20mm, thickness 0.05mm；The thickness of described film thermocouple is 1 μm；Described thermoresistance layer 3 material is Sio2、
Aluminum foil and adhesive tape, preferably aluminum foil and adhesive tape, thickness 0.05mm.Described film thermocouple is E type thermocouple, K-type thermocouple and T-shaped thermoelectricity
Even, the most T-shaped thermocouple.
The preparation method of above-mentioned thin film radiation heat flow transducer, comprises the steps:
(1) substrate carried out ultrasonic waves for cleaning 10min with acetone, with dehydrated alcohol, substrate is carried out ultrasonic waves for cleaning
10min, with deionized water substrate carried out ultrasonic waves for cleaning 10min, remove surface and oil contaminant and impurity；
(2) substrate is put on sol evenning machine vacuum cup, uniformly fill photoresist, and make photoresist with heating platform baking
Evaporate a certain amount of solution；
(3) substrate and glass mask plate are put on litho machine planet carrier, carry out photoetching, prepare the light needle drawing of A electrode 9
Shape, is placed again into heating platform baking and makes photoresist evaporate a certain amount of solution further；
(4) substrate is put into coater example platform, at the metal level of substrate surface deposition film thermocouple A electrode 9, take
Go out substrate and put into equipped with the ultrasonic cleaner of acetone is removed surface light photoresist, clear in dehydrated alcohol and deionized water successively
The impurity on wash clean surface；
(5) again substrate is put on sol evenning machine vacuum cup, uniformly fill photoresist, and make light with heating platform baking
Photoresist evaporates a certain amount of solution；
(6) substrate and glass mask plate are put on litho machine planet carrier, carry out photoetching, prepare the light needle drawing of B electrode 10
Shape, puts into heating platform baking and makes photoresist evaporate a certain amount of solution further；
(7) substrate is put into coater example platform, at the metal level of substrate surface deposition film thermocouple B electrode 10,
Take out substrate and put into equipped with the ultrasonic cleaner of acetone is removed surface light photoresist, successively in dehydrated alcohol and deionized water
Clean up the impurity on surface；
(8) by thin film radiation heat flow transducer series connection plural film thermocouple two external connection end respectively with
Each self-corresponding compensating wire is connected with conducting resinl at pad；
(9) cover one layer of thermoresistance layer at substrate surface, and cover the thermoresistance layer of equal thickness outside at contact 11 again.
The invention will be further described with embodiment below in conjunction with the accompanying drawings.
Seeing Fig. 1, described thin film radiation heat flow transducer includes substrate 1, the film thermocouple array being located in substrate 1
2, the thermoresistance layer 3 being located on film thermocouple array；Described film thermocouple array sees Fig. 2, two or more include A electrode
The film thermocouple of 9 and B electrodes 10 is in series by outer contact 11；The outer contact 11 of described A electrode 9 and B electrode and connection
The thermoresistance layer 7 that point 12 is provided with in Fig. 1；The thermoresistance layer 8 that described outer contact 11 is provided with in Fig. 1；The two or more of described series connection
Two external connection end of film thermocouple be connected with each self-corresponding compensating wire 14 through a pad 13 respectively；4 knots in Fig. 1
12 nodes in some corresponding diagram 2,11 nodes in 5 node corresponding diagram 2 in Fig. 1；6 lines in Fig. 1 are that film thermocouple is led
Line.
Wherein, described substrate 1 material is polyimide flex material, its a size of 20mm × 20mm, thickness 0.05mm；Institute
The thickness stating film thermocouple is 1 μm；Described thermoresistance layer 3 material is aluminum foil and adhesive tape, thickness 0.05mm.Described film thermocouple is
T-shaped thermocouple.
The preparation method of above-mentioned thin film radiation heat flow transducer, comprises the steps:
(1) substrate carried out ultrasonic waves for cleaning 10min with acetone, with dehydrated alcohol, substrate is carried out ultrasonic waves for cleaning
10min, with deionized water substrate carried out ultrasonic waves for cleaning 10min, remove surface and oil contaminant and impurity；
(2) substrate is put on sol evenning machine vacuum cup, uniformly fill NR74g-6000PY type and bear glue, and use heating platform
At a temperature of 110 DEG C, toast 120s, make photoresist evaporate a certain amount of solution；Wherein sol evenning machine rotating speed is 500rpm, time
5s, rotating speed is 4000rpm, time 90s；
(3) substrate and glass mask plate are put on litho machine planet carrier, carry out photoetching, prepare the light needle drawing of A electrode 9
Shape, is placed again into heating platform and toasts 60s at a temperature of 110 DEG C, make photoresist evaporate a certain amount of solution further；Wherein
Photo-etching machine exposal time 3.8s；
(4) substrate is put into coater example platform, at the metal level of substrate surface deposition film thermocouple A electrode 9, take
Go out substrate and put into equipped with the ultrasonic cleaner of acetone is removed surface light photoresist, clear in dehydrated alcohol and deionized water successively
The impurity on wash clean surface；
(5) second step is repeated；
(6) substrate and glass mask plate are put on litho machine planet carrier, carry out photoetching, prepare the light needle drawing of B electrode 10
Shape, is placed again into heating platform and toasts 60s at a temperature of 110 DEG C, make photoresist evaporate a certain amount of solution further；Wherein
Photo-etching machine exposal time 3.8s；
(7) substrate is put into coater example platform, at the metal level of substrate surface deposition film thermocouple B electrode 10,
Take out substrate and put into equipped with the ultrasonic cleaner of acetone is removed surface light photoresist, successively in dehydrated alcohol and deionized water
Clean up the impurity on surface；
(8) by thin film radiation heat flow transducer series connection plural film thermocouple two external connection end respectively with
Each self-corresponding compensating wire is connected with conducting resinl at pad；
(9) paste one layer of aluminum foil and adhesive tape at substrate surface, and cover the aluminum foil and adhesive tape of equal thickness outside at contact 11 again.
Claims (4)
1. a thin film radiation heat flow transducer, it is characterised in that: include substrate (1), the film thermocouple being located in substrate (1)
Array (2), the thermoresistance layer (3) being located on film thermocouple array (2)；Film thermocouple array (2) is by plural thin film
Thermocouple is in series by outer contact (11), and film thermocouple is connected by A electrode (9) and B electrode (10) and forms；Adjacent two
Individual outer contact (11) is provided with thermoresistance layer (3)；Two external connection end of film thermocouple array (2) respectively through pad (13) with each
The compensating wire (14) that electrode is corresponding connects.
Thin film radiation heat flow transducer the most according to claim 1, it is characterised in that: described film thermocouple is E type heat
Galvanic couple, the most T-shaped thermocouple of K-type thermoelectricity.
Thin film radiation heat flow transducer the most according to claim 1 and 2, it is characterised in that: the material of described substrate (1) is
Si、Or polyimide flex material, it is a size of, thickness is；Described film thermocouple
Thickness is；The material of described thermoresistance layer (3) isOr aluminum foil and adhesive tape, thickness is。
4. the preparation method of a thin film radiation heat flow transducer as claimed in claim 1, it is characterised in that include following step
Rapid:
(1) substrate is cleaned；
(2) coating photoresist post-drying photoresist；
(3) substrate and glass mask plate are put on litho machine planet carrier, carry out photoetching, prepare the litho pattern of A electrode (9)；
(4) substrate is put into coater example platform, at the metal level of substrate surface deposition film thermocouple A electrode (9)；
(5) coat photoresist and dry photoresist；
(6) substrate and glass mask plate are put on litho machine planet carrier, carry out photoetching, prepare the light needle drawing of B electrode (10)
Shape；
(7) substrate is put into coater example platform, at the metal level of substrate surface deposition film thermocouple B electrode (10)；
(8) two external connection end of film thermocouple array are used conducting resinl phase with each self-corresponding compensating wire respectively at pad
Even；
(9) paste one layer of aluminum foil and adhesive tape at substrate surface, and contact covers the aluminum foil and adhesive tape of equal thickness more outside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610390008.2A CN106124064A (en) | 2016-06-02 | 2016-06-02 | Thin film radiation heat flow transducer and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610390008.2A CN106124064A (en) | 2016-06-02 | 2016-06-02 | Thin film radiation heat flow transducer and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106124064A true CN106124064A (en) | 2016-11-16 |
Family
ID=57270870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610390008.2A Pending CN106124064A (en) | 2016-06-02 | 2016-06-02 | Thin film radiation heat flow transducer and preparation method thereof |
Country Status (1)
| Country | Link |
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| CN (1) | CN106124064A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106706167A (en) * | 2016-12-29 | 2017-05-24 | 北京遥测技术研究所 | High-sensitivity quick response heat flux sensor |
| CN108287027A (en) * | 2017-12-29 | 2018-07-17 | 华中科技大学 | A kind of film-type superhigh temperature heat flow transducer sensitivity member and preparation method thereof |
| CN108562381A (en) * | 2018-03-22 | 2018-09-21 | 中北大学 | Thin film sensor and preparation method thereof for measuring hot-fluid under hot environment |
| CN112432719A (en) * | 2020-11-06 | 2021-03-02 | 中国空气动力研究与发展中心超高速空气动力研究所 | Novel thermopile heat flow sensor |
| CN114639768A (en) * | 2022-03-22 | 2022-06-17 | 电子科技大学 | Atomic layer thermopile heat flow sensor and batch preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4779994A (en) * | 1987-10-15 | 1988-10-25 | Virginia Polytechnic Institute And State University | Heat flux gage |
| US20030016116A1 (en) * | 2001-07-23 | 2003-01-23 | Blaha Charles A. | Method of depositing a thin metallic film and related apparatus |
| CN101819074A (en) * | 2010-03-16 | 2010-09-01 | 中国飞机强度研究所 | Diaphragm type heat-flow density sensor and manufacturing method thereof |
| CN102928106A (en) * | 2012-10-26 | 2013-02-13 | 中国电子科技集团公司第四十八研究所 | Integrated thin film temperature heat flow compound sensor and preparation method thereof |
| CN102928460A (en) * | 2012-10-26 | 2013-02-13 | 中国电子科技集团公司第四十八研究所 | Film heat flux sensor and preparation method thereof |
| CN203643055U (en) * | 2013-11-25 | 2014-06-11 | 中国电子科技集团公司第四十八研究所 | Thin-film heat flow sensor for high-temperature large-heat-flow measurement |
-
2016
- 2016-06-02 CN CN201610390008.2A patent/CN106124064A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4779994A (en) * | 1987-10-15 | 1988-10-25 | Virginia Polytechnic Institute And State University | Heat flux gage |
| US20030016116A1 (en) * | 2001-07-23 | 2003-01-23 | Blaha Charles A. | Method of depositing a thin metallic film and related apparatus |
| CN101819074A (en) * | 2010-03-16 | 2010-09-01 | 中国飞机强度研究所 | Diaphragm type heat-flow density sensor and manufacturing method thereof |
| CN102928106A (en) * | 2012-10-26 | 2013-02-13 | 中国电子科技集团公司第四十八研究所 | Integrated thin film temperature heat flow compound sensor and preparation method thereof |
| CN102928460A (en) * | 2012-10-26 | 2013-02-13 | 中国电子科技集团公司第四十八研究所 | Film heat flux sensor and preparation method thereof |
| CN203643055U (en) * | 2013-11-25 | 2014-06-11 | 中国电子科技集团公司第四十八研究所 | Thin-film heat flow sensor for high-temperature large-heat-flow measurement |
Non-Patent Citations (3)
| Title |
|---|
| 徐福祥等: "《卫星工程概论 上》", 31 December 2003 * |
| 朱凤芝: "《化工仪表及自动化》", 30 April 2011 * |
| 郑志霞: "《硅微机械传感器技术》", 31 December 2012 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106706167A (en) * | 2016-12-29 | 2017-05-24 | 北京遥测技术研究所 | High-sensitivity quick response heat flux sensor |
| CN106706167B (en) * | 2016-12-29 | 2019-05-24 | 北京遥测技术研究所 | A kind of high sensitivity quick response heat flow transducer |
| CN108287027A (en) * | 2017-12-29 | 2018-07-17 | 华中科技大学 | A kind of film-type superhigh temperature heat flow transducer sensitivity member and preparation method thereof |
| CN108562381A (en) * | 2018-03-22 | 2018-09-21 | 中北大学 | Thin film sensor and preparation method thereof for measuring hot-fluid under hot environment |
| CN112432719A (en) * | 2020-11-06 | 2021-03-02 | 中国空气动力研究与发展中心超高速空气动力研究所 | Novel thermopile heat flow sensor |
| CN114639768A (en) * | 2022-03-22 | 2022-06-17 | 电子科技大学 | Atomic layer thermopile heat flow sensor and batch preparation method thereof |
| CN114639768B (en) * | 2022-03-22 | 2023-07-04 | 电子科技大学 | Atomic layer thermopile heat flow sensor and batch preparation method thereof |
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Application publication date: 20161116 |
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