CN106118926A - 一种电子工业用完全无卤素无voc水基清洗剂 - Google Patents
一种电子工业用完全无卤素无voc水基清洗剂 Download PDFInfo
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- CN106118926A CN106118926A CN201610439355.XA CN201610439355A CN106118926A CN 106118926 A CN106118926 A CN 106118926A CN 201610439355 A CN201610439355 A CN 201610439355A CN 106118926 A CN106118926 A CN 106118926A
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- Prior art keywords
- halogen
- entirely
- cleaning agent
- aqueous cleaning
- electronic industry
- Prior art date
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- 229910052736 halogen Inorganic materials 0.000 title claims abstract description 46
- 150000002367 halogens Chemical class 0.000 title claims abstract description 46
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 41
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000004140 cleaning Methods 0.000 claims abstract description 24
- 239000008367 deionised water Substances 0.000 claims abstract description 17
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 17
- 150000001412 amines Chemical class 0.000 claims abstract description 8
- 239000000470 constituent Substances 0.000 claims abstract description 8
- 239000013530 defoamer Substances 0.000 claims abstract description 8
- 229910017053 inorganic salt Inorganic materials 0.000 claims abstract description 8
- 230000000844 anti-bacterial effect Effects 0.000 claims abstract description 7
- 239000004094 surface-active agent Substances 0.000 claims abstract description 7
- 230000007797 corrosion Effects 0.000 claims abstract description 6
- 238000005260 corrosion Methods 0.000 claims abstract description 6
- 239000012744 reinforcing agent Substances 0.000 claims abstract description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 21
- 238000003756 stirring Methods 0.000 claims description 21
- -1 DGDE Chemical compound 0.000 claims description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 9
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 8
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 7
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 7
- 239000004111 Potassium silicate Substances 0.000 claims description 6
- 238000001914 filtration Methods 0.000 claims description 6
- 150000002460 imidazoles Chemical class 0.000 claims description 6
- 229910052913 potassium silicate Inorganic materials 0.000 claims description 6
- 235000019353 potassium silicate Nutrition 0.000 claims description 6
- JHJUUEHSAZXEEO-UHFFFAOYSA-M sodium;4-dodecylbenzenesulfonate Chemical compound [Na+].CCCCCCCCCCCCC1=CC=C(S([O-])(=O)=O)C=C1 JHJUUEHSAZXEEO-UHFFFAOYSA-M 0.000 claims description 6
- 239000004115 Sodium Silicate Substances 0.000 claims description 5
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 5
- 239000011343 solid material Substances 0.000 claims description 5
- NFAOATPOYUWEHM-UHFFFAOYSA-N 2-(6-methylheptyl)phenol Chemical compound CC(C)CCCCCC1=CC=CC=C1O NFAOATPOYUWEHM-UHFFFAOYSA-N 0.000 claims description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 4
- XTDYIOOONNVFMA-UHFFFAOYSA-N dimethyl pentanedioate Chemical compound COC(=O)CCCC(=O)OC XTDYIOOONNVFMA-UHFFFAOYSA-N 0.000 claims description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims description 4
- WFKAJVHLWXSISD-UHFFFAOYSA-N isobutyramide Chemical compound CC(C)C(N)=O WFKAJVHLWXSISD-UHFFFAOYSA-N 0.000 claims description 4
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 4
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 claims description 4
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 3
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- MUXOBHXGJLMRAB-UHFFFAOYSA-N Dimethyl succinate Chemical compound COC(=O)CCC(=O)OC MUXOBHXGJLMRAB-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- DNSISZSEWVHGLH-UHFFFAOYSA-N butanamide Chemical compound CCCC(N)=O DNSISZSEWVHGLH-UHFFFAOYSA-N 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- MIMDHDXOBDPUQW-UHFFFAOYSA-N dioctyl decanedioate Chemical compound CCCCCCCCOC(=O)CCCCCCCCC(=O)OCCCCCCCC MIMDHDXOBDPUQW-UHFFFAOYSA-N 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 claims description 2
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- 229940116333 ethyl lactate Drugs 0.000 claims description 2
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- VRFQDZQUTDJJMF-UHFFFAOYSA-N toluene;2h-triazole Chemical compound C1=CNN=N1.CC1=CC=CC=C1 VRFQDZQUTDJJMF-UHFFFAOYSA-N 0.000 claims description 2
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- OXFSTTJBVAAALW-UHFFFAOYSA-N 1,3-dihydroimidazole-2-thione Chemical class SC1=NC=CN1 OXFSTTJBVAAALW-UHFFFAOYSA-N 0.000 claims 1
- VULXNJHRVYGPSQ-UHFFFAOYSA-N N=NC=NN.N=NC=NN.CC(COC(C)CO)O Chemical compound N=NC=NN.N=NC=NN.CC(COC(C)CO)O VULXNJHRVYGPSQ-UHFFFAOYSA-N 0.000 claims 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 claims 1
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- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 3
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- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
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- 239000002360 explosive Substances 0.000 description 3
- 150000008282 halocarbons Chemical class 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 230000008595 infiltration Effects 0.000 description 3
- 238000001764 infiltration Methods 0.000 description 3
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- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
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- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
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- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
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- 239000004310 lactic acid Substances 0.000 description 2
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- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
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- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001555 benzenes Chemical class 0.000 description 1
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- PCHPORCSPXIHLZ-UHFFFAOYSA-N diphenhydramine hydrochloride Chemical compound [Cl-].C=1C=CC=CC=1C(OCC[NH+](C)C)C1=CC=CC=C1 PCHPORCSPXIHLZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/83—Mixtures of non-ionic with anionic compounds
- C11D1/8305—Mixtures of non-ionic with anionic compounds containing a combination of non-ionic compounds differently alcoxylised or with different alkylated chains
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/08—Silicates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/162—Organic compounds containing Si
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
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Abstract
本发明公开了一种电子工业用完全无卤素无VOC水基清洗剂,其组成成分质量配比为:有机胺碱0.5~2.0%;特种无机盐0.5~1.0%;助溶杀菌剂3.0~10.0%;助溶增强剂1.5~4.0%;表面活性剂1.0~2.5%;缓蚀剂0.2~0.5%;消泡剂0.1~0.40%;去离子水余量。本发明的水基清洗剂完全无卤素无VOC符合环保要求,清洗效果和去污能力完全达到全氯氟烃类溶剂和VOC溶剂的效果,无毒无腐蚀性、不产生公害物质、使用操作方便、对环境无污染。
Description
技术领域
本发明涉及清洗剂,具体涉及一种电子工业用完全无卤素无VOC水基清洗剂。
背景技术
当前电子组装连接中,主要采用助焊剂、锡膏、贴片胶(充当填充粘剂)充当焊接载体,然而助焊剂、锡膏和贴片胶的成分复杂,通常由松香、树脂、有机活性剂、表面活性剂、溶剂等组成。这些物质通常是不溶于水,再加上承载焊接使用的设备波峰炉、回流焊炉长期在高温下使用助焊剂、锡膏、贴片胶中的溶剂挥发,发生焊接反应后(贴片胶固化),其残留物非常难清洗。早期是采用三氯甲烷、三氯乙烷、三氯乙烯等全氯氟烃类溶剂进行清洗,此类溶剂的显著特点是对人体有毒害、破坏大气臭氧层、清洗力强、去污效果快、化学稳定性好、不易燃烧、渗透性强、快干、表面张力小等优点被广泛应用至今。
随着人们环保意识的增强,发现F、Cl、Br这些卤素及其化合物生产使用不当也会对身体和环境造成巨大的伤害,世界上许多政府组织和环保组织积极推动电子产品无卤化进程。目前电子组装焊接行业都在积极推广无卤素绿色环保制程,从元器件、焊接材料、清洗剂、包装材料等各个环节都在要求和使用符合环保的无卤素产品。为满足环保需求和市场需要,业界普遍采用低分子的醇类、烷烃类、苯类、酮类如甲醇、乙醇、异丙醇、正已烷、乙二烷、甲苯、二甲苯、丙酮、丁酮用上述单一溶剂或复配成混合液替代氯氟烃类溶剂进行清洗,但该类清洗剂的特点是属挥发性有机化合物(VOC)、清洗性差、去污力弱、溶解度小、挥发快、气味很大、低闪点、易燃易爆、操作工艺窗口窄、在运输、仓储、使用的过程中容易发生安全事故,同时对作业人员身体有一定的毒害作用、严重危及作业人员的人身安全和环境安全。再加上其基本上是石油的下游产品使用的过程中大量挥发,对不可再生资源也是一种巨大的浪费,挥发性有机化合物(VOC)散发到空气中对大气臭氧层同样能形成破坏作用,因些VOC挥发性有机溶剂也将逐渐是环保禁用物质。由于电子组装连接工业无卤素化的迅速普及,完全无卤素无VOC清洗剂是环保的发展趋势,以去离子水替代VOC溶剂,完全无卤素无VOC水基清洗剂是电子组装连接工业清洗剂发展的必然趋势。因些业界期待能研发出一款能完全替代氯氟烃类溶剂和有机溶剂性能的完全无卤素无VOC水基清洗剂。
本发发明的目的是克服现有技术的不足,研发出一种无毒、无害、无腐蚀性,不燃、能自然降解的水基清洗剂,主要用来清洗焊接工具及设备波峰炉、回流炉、冶具、钢网和刮刀等设备,线路板上错喷涂助焊剂、锡膏、贴片胶的一种电子工业用完全无卤素无VOC水基清洗剂的组合物、制备方法及其使用方法。
发明内容
本发明的目的是克服现有技术的不足,研发出一种无毒、无害、无腐蚀性,不燃、能自然降解的水基清洗剂,其主要用来清洗焊接工具及波峰炉、回流炉、冶具、钢网和刮刀等设备、以及错喷涂助焊剂、锡膏、贴片胶的线路板的一种电子工业用完全无卤素无VOC水基清洗剂。
本发明通过以下技术方案来实现的:
一种电子工业用完全无卤素无VOC水基清洗剂,其组成成分质量配比为:
优选地,所述有机胺碱为醇胺类和酰胺类,如一乙醇胺、二乙醇胺、三乙醇胺、3-丙醇胺、甲酰胺、丙酰胺、丁酰胺、异丁酰胺中的一种或几种组合。利用有机胺碱高渗透结构相似相溶原理可以快速渗透到残留物中和有机胺碱对有机物有一定的溶解作用,尤其是中和有机酸显著。在清洗过程中可起到渗透、溶解、中和的作用、还可用来调节清洗剂的pH值。
优选地,所述特种无机盐为硅酸钾、硅酸钠、硅酸钾钠中的一种或几种组合。特种无机盐具有增大去离子水分子界面能,去离子水中界面能越高晶体临界半径越大,结晶析出越难,同时还能起到软化水质,增大去离子水的饱和度,清洗过程中清洗剂与被清洗件表面的残留物发生乳化、皂化、酸碱中和等反应,然而酸碱中和反应会生成盐和水,通常盐会结晶析出,当清洗剂达到过饱和后,盐会结晶聚集并沉积下来从而结块,清洗剂持续不饱和状态的时间越长,使盐结晶析出时间延长,抑制盐结晶的生长速率,使其分散态悬浮于清洗剂中,从而阻止盐结晶在被清洗件表面和清洗剂中形成沉积,易于被清洗掉,增强清洗剂分散力、溶解力和增大饱和度。
优选地,所述助溶杀菌剂为醇醚溶剂,如乙醇、异丙醇、二丙二醇、二甘醇、丙二醇甲醚、乙二醇乙醚、二丙二醇二甲醚、乙二醇单丁醚、乙二醇单甲醚、二甘醇单甲醚、丙二醇甲醚、二甘醇乙醚、丙二醇单甲醚中的一种或几种组合。锡膏、助焊剂、贴片胶中其成分含有大量的松香、树脂、有机活性剂这些物质是不溶于水的,必须先进行溶解后才能进行清洗。醇醚溶剂对松香、树脂、有机活性剂有很强的溶解力,再加上松香、树脂、有机活化剂活化温度和溶解度各不相同,通过选配不同沸点和溶解度的醇醚溶剂使在整个清洗过程都有足够的溶解力协同配合,加强溶解,清洗剂采用水作溶剂后,贮存时间过长会导致生长微生物,采用醇醚溶剂能起到杀菌作用,防止水中微生物生长。
优选地,所述助溶增强剂为多元酸酯,如丁二酸二甲酯、戊二酸二甲酯、己二酸二辛酯、癸二酸二辛酯、芳香酸酯、醋酸丁酯、乳酸乙酯、已二酸二甲酯、丙二酸二乙酯中的一种或几种组合。这些二元酸酯类溶剂有快速溶解力、能有效降低被清洗物的粘度,具体良好的流动性,提高对被清洗表面的光亮度,尤其对松香、树脂有超强的溶解力。配合醇醚溶剂共同使用,能加大清洗剂的溶解力、清洗力和渗透力。
优选地,所述表面活性剂为非离子表面活性剂如壬酚基聚氧乙烯醚(NP-10)、脂肪醇聚氧乙烯醚、异辛基酚聚氧乙烯醚、烷基酚聚氧乙烯醚、以及阴离子表面活性剂如十二烷基苯磺酸钠中的一种或几种组合。非离子表面活性剂具有亲水基团和亲油基团的双亲特性,具有降低表面张力、增强润湿力和增强渗透力,能降低被清洗件表面污物的表面张力,改善污物的流动性和润湿性,应用阴离子表面活性剂的亲水基团特性进一步降低去离水的自由能,减少去离子水分子间的相互作用力,采用二种表面活性剂的协同作用,最大限度的发挥润湿、渗透、乳化、皂化作用,增强清洗力、润湿力、提高清洗剂的清洗力。
优选地,所述缓蚀剂为咪唑及咪唑类衍生物,如2-苯甲咪唑、2-甲基咪唑、2-巯基并咪唑、甲基苯三氮唑中的一种或几种组合。具有起氧化抑制作用减少残留物清洗、溶解的过程中对表面金属面再次起腐蚀作用,Cu+,Sn+与吸附的咪唑分子发生化学化应,形成Cu、Sn咪唑高分子络合物薄膜,形成一层保护膜、能有效去除其它金属离子聚集残留在被清洗件金属表面,避免其它金属离子再次污染。
优选地,所述消泡剂为特种有机硅消泡剂,如、SJ-210、SJ-215、SJ-220中的一种或几种组合。非离子表面活性剂在水中有良好的发泡性,清洗液中的泡沫太多,影响清洗效果,尤其是用超声波清洗时,清洗剂在超声波的作用下,产生大量的气泡,给清洗作业带来困难,因此要快速消泡,又不能影响清洗效果,此类特种有机硅消泡剂具有消泡速度快,抑泡时间长等优良特性从而抑制气泡产生,易于清洗。
上述任一技术方案的电子工业用完全无卤素无VOC水基清洗剂的制备方法,包括如下步骤:
在常温常压下,在带有搅拌器的反应釜中,加入去离子水开始搅拌,先加入特种无机盐完全溶解后,依次加入有机胺碱、助溶杀菌剂、助溶增强剂、表面活性剂、缓蚀剂、消泡剂持续搅拌至固体物料完全溶化,混合均匀合,停止搅拌;静置过滤后即为完全无卤素无VOC水基清洗剂。
上述任一技术方案的电子工业用完全无卤素无VOC水基清洗剂的使用方法,其是可采用超声波清洗机、浸泡、喷淋、手工刷洗,清洗好后可用风枪吹干或自然风干即可使用。当用本发明的电子工业用完全无卤素无VOC水基清洗剂作业时,可根据清洗要求的实际情况,用去离子水与本清洗剂按1-5:1配制成清洗液进行清洗,在50-70℃时用超声波、浸泡或喷淋清洗,清洗效果更佳。
本发明的有益效果是:
本发明完全无卤素无VOC水基清洗剂,是针对目前环保法规对电子连接组装材料完全无卤素的要求而研发配合电子连接组装焊接过程中清洗使用的清洗剂。本发明清洗剂根据清洗机理,选用完全不含卤素的有机胺碱、特种无机盐、助溶杀菌剂、助溶增强剂、表面活性剂、缓蚀剂、消泡剂均溶于水,个别不溶于水的物质在醇醚和酯类助溶剂的配合下完全溶于水,又通过添加非离子表面活性剂和特种无机盐降低水的表面张力,利用非离子表面活性剂的双亲特性形成单分子层和特种无机盐的软化水质和增大水饱和度使其性能更加可靠、解决了个别溶剂与水混溶不好的现象,清洗剂始终成为均一溶液体系,避免出现长期贮存或在使用的过程中出现分层。采用复配的组合能有效降低去离子水的表面张力,增强润湿力和渗透力,在整个清洗过程中协同发挥皂化、润湿、渗透、乳化、分散多重清洗机制作用。
本发明的目的是针对目前用的清洗剂达不到完全无卤素无VOC要求,而发明的一种电子工业用高可靠性要求的水基清洗剂。本发明从环保出发、清洗剂的溶剂采用去离子水代替传统的卤代烃溶剂和VOC有机溶剂,这种清洗剂对被清洗件润湿能力强、能有效减小去离子水的表面张力、对被清洗件无腐蚀、干燥后无残留、完全无卤素、不易燃、不易爆、无毒、无公害、无腐蚀性、无特别刺激性气味的完全无卤素的环保水基清洗剂。该清洗剂广泛应用在电子组装连接焊接工艺中用来清洗焊接工具及设备;线路板上错喷涂助焊剂、锡膏、贴片胶的清洗。
本发明的完全无卤素无VOC水基清洗剂与卤代烃溶剂和VOC清洗剂相比具有如下优势:完全无卤素符合环保要求,清洗效果和去污能力完全达到卤代烃溶剂和VOC溶剂的效果,无毒无腐蚀性、不产生公害物质、使用操作方便、对环境无污染。对被清洗件去除污物效果好,工艺窗口大、能有效清除使用助焊剂、锡膏、贴片胶设备上的残留物、清洗线路板上错喷涂助焊剂、锡膏、贴片胶、对被清洗件表面金属、塑料、橡胶、油墨、丝印不会产生腐蚀、溶解和溶胀。不易燃易爆,无刺激性气味产生,是绿色生产和环保要求的清洗剂。
具体实施方式
下面通过具体的实施例对本发明进行详细说明,但这些例举性实施方式的用途和目的仅用来例举本发明,并非对本发明的实际保护范围构成任何形式的任何限定,更非将本发明的保护范围局限于此。
另外,除非特别说明,下面实施例组分的配比均为质量百分比。
实施例1:
一种电子工业用完全无卤素无VOC水基清洗剂,其组成成分质量配比为:
具体制备方法如下:
在常温常压下,在带有搅拌器的反应釜中,加入去离子水开始搅拌,先加入硅酸钾完全溶解后,依次加入三乙醇胺、乙醇、二甘醇单甲醚、丙二醇甲醚、戊二酸二甲酯、乳酸乙酯、壬酚基聚氧乙烯醚、异辛基酚聚氧乙烯醚、十二烷基苯磺酸钠与SJ-200持续搅拌至固体物料完全溶化,混合均匀合,停止搅拌。静置过滤后即为本发明的一种电子工业用完全无卤素无VOC水基清洗剂。
实施例2:
一种电子工业用完全无卤素无VOC水基清洗剂,其组成成分质量配比为:
具体制备方法:
在常温常压下,在带有搅拌器的反应釜中,加入去离子水开始搅拌,先加入硅酸钠完全溶解后,依次加入二乙醇胺、异丙醇、丙二醇甲醚、二甘醇乙醚、丁二酸二甲酯、丙二酸二乙酯、脂肪醇聚氧乙烯醚、烷基酚聚氧乙烯醚、十二烷基苯磺酸钠与SJ-210持续搅拌至固体物料完全溶化,混合均匀合,停止搅拌。静置过滤后即为本发明的一种电子工业用完全无卤素无VOC水基清洗剂。
实施例3:
一种电子工业用完全无卤素无VOC水基清洗剂,其组成成分质量配比为:
具体制备方法:
在常温常压下,在带有搅拌器的反应釜中,加入去离子水开始搅拌,先加入硅酸钾完全溶解后,依次加入3-丙醇胺、异丙醇、乙二醇乙醚、、丙二醇单甲醚、己二酸二甲酯、醋酸丁酯、壬酚基聚氧乙烯醚、异辛基酚聚氧乙烯醚、十二烷基苯磺酸钠与SJ-215持续搅拌至固体物料完全溶化,混合均匀合,停止搅拌。静置过滤后即为本发明的一种电子工业用完全无卤素无VOC水基清洗剂。
实施例4:
一种电子工业用完全无卤素无VOC水基清洗剂,其组成成分质量配比为:
具体制备方法:
在常温常压下,在带有搅拌器的反应釜中,加入去离子水开始搅拌,先加入硅酸钠完全溶解后,依次加入丁酰胺、异丁酰胺碳酸钠、乙醇、乙二醇乙醚、癸二酸二辛酯、乳酸乙酯、烷基酚聚氧乙烯醚、异辛基酚聚氧乙烯醚、十二烷基苯磺酸钠与SJ-215持续搅拌至固体物料完全溶化,混合均匀合,停止搅拌。静置过滤后即为本发明的一种电子工业用完全无卤素无VOC水基清洗剂。
实施例5:
一种电子工业用完全无卤素无VOC水基清洗剂,其组成成分质量配比为:
在常温常压下,在带有搅拌器的反应釜中,加入去离子水开始搅拌,先加入硅酸钠完全溶解后,依次加入三乙醇胺、乙醇、异丙醇、乙二醇单丁醚、二甘醇乙醚、戊二酸二甲酯、己二酸二辛酯、脂肪醇聚氧乙烯醚、烷基酚聚氧乙烯醚、十二烷基苯磺酸钠与SJ-210持续搅拌至固体物料完全溶化,混合均匀合,停止搅拌。静置过滤后即为产品本发明的一种电子工业用完全无卤素无VOC水基清洗剂。
将实施例1-5得到的电子工业用完全无卤素无VOC水基清洗剂进行测试,测试结果的各项指标参见表1:
表1
应当理解,这些实施例的用途仅用于说明本发明而非意欲限制本发明的保护范围。此外,也应理解,在阅读了本发明的技术内容之后,本领域技术人员可以对本发明作各种改动、修改和/或变型,所有的这些等价形式同样落于本申请所附权利要求书所限定的保护范围之内。
Claims (10)
1.一种电子工业用完全无卤素无VOC水基清洗剂,其特征在于,其组成成分质量配比为:
2.根椐权利要求1所述的电子工业用完全无卤素无VOC水基清洗剂,其特征在于,所述的有机胺碱为一乙醇胺、二乙醇胺、三乙醇胺、3-丙醇胺、甲酰胺、乙酰胺、丙酰胺、丁酰胺、异丁酰胺中的一种或几种组合。
3.根椐权利要求1所述的电子工业用完全无卤素无VOC水基清洗剂,其特征在于,所述特种无机盐为硅酸钾、硅酸钠、硅酸钾钠中的一种或几种组合。
4.根椐权利要求1所述的电子工业用完全无卤素无VOC水基清洗剂,其特征在于,所述的助溶杀菌剂为乙醇、异丙醇、二丙二醇、二甘醇、丙二醇甲醚、乙二醇乙醚、二丙二醇二甲醚、乙二醇单丁醚、乙二醇单甲醚、二甘醇单甲醚、丙二醇甲醚、二甘醇乙醚、丙二醇单甲醚中的一种或几种组合。
5.根椐权利要求1所述的电子工业用完全无卤素无VOC水基清洗剂,其特征在于,所述的助溶增强剂为丁二酸二甲酯、戊二酸二甲酯、己二酸二辛酯、癸二酸二辛酯、芳香酸酯、醋酸丁酯、乳酸乙酯、已二酸二甲酯、丙二酸二乙酯中的一种或几种组合。
6.根椐权利要求1所述的电子工业用完全无卤素无VOC水基清洗剂,其特征在于,所述的表面活性剂为壬酚基聚氧乙烯醚、脂肪醇聚氧乙烯醚、异辛基酚聚氧乙烯醚、烷基酚聚氧乙烯醚、十二烷基苯磺酸钠中的一种或几种组合。
7.根椐权利要求1所述的电子工业用完全无卤素无VOC水基清洗剂,其特征在于,所述的缓蚀剂为2-苯甲咪唑、2-甲基咪唑、2-巯基并咪唑、甲基苯三氮唑中的一种或几种组合。
8.根椐权利要求1所述的电子工业用完全无卤素无VOC水基清洗剂,其特征在于,所述的消泡剂为特种有机硅消泡剂SJ-200、SJ-210、SJ-215中的一种或几种组合。
9.一种权利要求1-8任一所述的电子工业用完全无卤素无VOC水基清洗剂的制备方法,其特征在于,包括如下步骤:
在常温常压下,在带有搅拌器的反应釜中,加入去离子水开始搅拌,先加入特种无机盐完全溶解后,依次加入有机胺碱、助溶杀菌剂、助溶增强剂、表面活性剂、缓蚀剂、消泡剂持续搅拌至固体物料完全溶化,混合均匀合,停止搅拌;静置过滤后即为完全无卤素无VOC水基清洗剂。
10.一种权利要求1-8任一所述电子工业用完全无卤素无VOC水基清洗剂的使用方法,其特征在于,用去离子水与本清洗剂按1-5:1配制成清洗液进行清洗,在50-70℃时用超声波、浸泡或喷淋清洗。
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