CN106118538A - Fusing point is bonding cream of low-melting-point metal of 108 ± 1 DEG C and preparation method thereof - Google Patents
Fusing point is bonding cream of low-melting-point metal of 108 ± 1 DEG C and preparation method thereof Download PDFInfo
- Publication number
- CN106118538A CN106118538A CN201610492015.3A CN201610492015A CN106118538A CN 106118538 A CN106118538 A CN 106118538A CN 201610492015 A CN201610492015 A CN 201610492015A CN 106118538 A CN106118538 A CN 106118538A
- Authority
- CN
- China
- Prior art keywords
- melting
- low
- point metal
- point
- indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J1/00—Adhesives based on inorganic constituents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/08—Macromolecular additives
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
Abstract
The present invention relates to bonding cream of low-melting-point metal that fusing point is 108 ± 1 DEG C and preparation method thereof, it is characterised in that it comprises low-melting-point metal and organic carrier.Described low-melting-point metal is by one or more in cerium, neodymium, yttrium, silver or the nickel of indium, stannum, zinc, and trace.The mass fraction of described low-melting-point metal is indium 50.4% ~ 51.4%, stannum 46.8% ~ 47.8%, zinc 1.3% ~ 2.3%.Owing to heat conduction and the electric conductivity of low-melting-point metal are excellent, the fusing point of the present invention is the bonding cream of low-melting-point metal of 108 ± 1 DEG C, both can serve as conductive adhesive cream, and can use as the bonding cream of heat conduction again.
Description
Technical field
The present invention relates to the bonding cream of low-melting-point metal that a kind of fusing point is 108 ± 1 DEG C, and this kind of low-melting-point metal is bonding
The preparation method and application of cream, owing to the bonding cream heat conduction of the low-melting-point metal of the present invention and electric conductivity are excellent, therefore it can be used
Make conductive adhesive cream, can use as the bonding cream of heat conduction again.The fusing point of the present invention is the bonding cream of low-melting-point metal of 108 ± 1 DEG C
Can be widely used for heat conduction, conduction field.
Background technology
Bonding agent (or binding agent) refers to the technology that homogeneity or heterogeneous body surface are connected together with an adhesive, and has stress
The features such as distribution is continuously, lightweight, or seals, and most technological temperatures are low.Bonding be particularly well-suited to unlike material, different-thickness,
Ultra-thin specification and the connection of complex component.Bonding RECENT DEVELOPMENTS is the fastest, and application industry is extremely wide, and to high-and-new science and technology progress and
People's daily life improves significant impact.
The composition of bonding agent in the market mostly is animal glue, synthetic resin, rubber and paint.Additionally, go back some nothing
Machine material is also used as binding agent, plays polymerization or improves the effect of performance.And these bonding agents are nonmetal and many
For Organic substance, and organic heat conduction and electric conductivity are poor, it is impossible to the contact resistance being effectively reduced between bonding plane or contact
Thermal resistance, if reaching certain temperature, heat can't shed, then can affect the service life of the devices such as electronic component.
For solving the problems referred to above, the present invention proposes the bonding cream of low-melting-point metal that a kind of fusing point is 108 ± 1 DEG C, its heat conduction
Excellent with electric conductivity, both can serve as conductive adhesive cream, and can use as the bonding cream of heat conduction again.
Summary of the invention
It is an object of the invention to provide the bonding cream of low-melting-point metal that a kind of fusing point is 108 ± 1 DEG C, and this kind of eutectic
The preparation method of some metal adhesive cream, owing to the bonding cream heat conduction of the low-melting-point metal of the present invention and electric conductivity are excellent, therefore it was both
Can serve as conductive adhesive cream, can use as the bonding cream of heat conduction again.
Technical scheme is as follows:
A kind of fusing point is the bonding cream of low-melting-point metal of 108 ± 1 DEG C, it is characterised in that it comprises low-melting-point metal and has airborne
Body；
Described low-melting-point metal comprises indium, stannum, zinc metal；
The mass fraction of described low-melting-point metal is indium 50.4% ~ 51.4%, stannum 46.8% ~ 47.8%, zinc 1.3% ~ 2.3%.
The heating of described organic carrier is volatile, for ethanol, propanol, butanol, acetone, toluene isobutyl ketone, ethyl acetate,
One or more in butyl acetate or resin and resin derivative.
The heat conduction of the bonding cream of described low-melting-point metal and electric conductivity are excellent, and it both can serve as conductive adhesive cream, and can make again
Use for the bonding cream of heat conduction.
Described low-melting-point metal adds in the cerium of trace, neodymium, yttrium, silver or nickel one or more, eutectic can be made
Point metal microalloying, to improve the performances such as the intensity of low-melting-point metal.
A kind of fusing point is the preparation method of the bonding cream of low-melting-point metal of 108 ± 1 DEG C, it is characterised in that it comprises following
Step:
(1) raw material of the low-melting-point metal of weighing needs preparation: indium, stannum, zinc；
(2) under vacuum or inert gas conditions, indium metal is heated to fusing；It is slowly added into metallic tin in the indium of fusing,
Limit heating edge is slowly stirred simultaneously；Treating that stannum is fully dissolved in indium, then add metallic zinc, limit heating edge is slowly stirred, until zinc
All dissolve；Finally, if it is desired, one or more added in the cerium of trace, neodymium, yttrium, silver or nickel, heat and delay
Slow stirring, until alloy becomes molten condition；Under vacuum or inert gas conditions, molten alloy is at 300 ~ 330 ° of C constant temperatures
Under be slowly stirred 1h, it is ensured that metal fully fuses；
(3) under vacuum or inert gas conditions, make the alloy natural cooling melted, prepare described low-melting point metal alloy；
(4) inert gas atomizer method is used to prepare low-melting alloy powder prepared low-melting point metal alloy；
(5) finally by low-melting alloy powder sieving, and add in organic carrier, prepare the bonding cream of described low-melting-point metal.
During use, bonding for low-melting-point metal cream is coated in heat source surface, radiator cold drawing or power lug, thermal source table
Can generate heat after face, radiator cold drawing or power lug energising, organic carrier is heated volatilization, and afterwards, low-melting-point metal can make thermal source
And be connected between radiator time, electric wire, the air gap can be got rid of to greatest extent, and be effectively reduced thermal contact resistance
Or contact resistance.
A kind of fusing point of the present invention is that the bonding cream of low-melting-point metal of 108 ± 1 DEG C has the advantage that
(1) fusing point of the bonding cream of the low-melting-point metal of the present invention is only 108 ± 1 DEG C, the stannum bismuth of existing 138 DEG C less than on market
Alloy, the energy consumed during use is lower, uses convenient.
(2) heat conduction of the bonding cream of the low-melting-point metal of the present invention, electric conductivity are all preferable, when organic carrier is heated volatilization
After, low-melting-point metal can make to be connected between thermal source and radiator time, electric wire, can get rid of between air to greatest extent
Gap, and it is effectively reduced thermal contact resistance or contact resistance.
Accompanying drawing explanation
Fig. 1 is the cooling curve figure of the low-melting-point metal that fusing point is 108 ± 1 DEG C of the middle present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawings and specific embodiment further describes the present invention.
Embodiment 1
Embodiment 1 illustrates the typical case of the bonding cream of low-melting-point metal that fusing point in the present invention is 108 ± 1 DEG C and preparation method should
With.Fig. 1 is the cooling curve figure of the low-melting-point metal that fusing point is 108 ± 1 DEG C of the middle present invention.
The bonding cream of the low-melting-point metal that a kind of fusing point is 108 ± 1 DEG C in the present embodiment, it is characterised in that it comprises low
Melting point metals and organic carrier；
Described low-melting-point metal is made up of indium, stannum, zinc；
The mass fraction of described low-melting-point metal is indium 50.9%, stannum 47.3%, zinc 1.8%.
The heating of described organic carrier is volatile, for resin.
The heat conduction of the bonding cream of described low-melting-point metal and electric conductivity are excellent, and it both can serve as conductive adhesive cream, and can make again
Use for the bonding cream of heat conduction.
A kind of fusing point is the preparation method of the bonding cream of low-melting-point metal of 108 ± 1 DEG C, it is characterised in that it comprises following
Step:
(1) raw material of the low-melting-point metal of weighing needs preparation: indium, stannum, zinc；
(2) under vacuum or inert gas conditions, indium metal is heated to fusing；It is slowly added into metallic tin in the indium of fusing,
Limit heating edge is slowly stirred simultaneously；Treating that stannum is fully dissolved in indium, then add metallic zinc, limit heating edge is slowly stirred, until zinc
All dissolve；Heat and be slowly stirred, until alloy becomes molten condition；Under vacuum or inert gas conditions, molten alloy exists
It is slowly stirred 1h, it is ensured that metal fully fuses under 300 ~ 330 ° of C constant temperatures；
(3) under vacuum or inert gas conditions, make the alloy natural cooling melted, prepare described low-melting point metal alloy；
(4) inert gas atomizer method is used to prepare low-melting alloy powder prepared low-melting point metal alloy；
(5) finally by low-melting alloy powder sieving, and add in organic carrier, prepare the bonding cream of described low-melting-point metal.
During use, bonding for low-melting-point metal cream is coated in heat source surface, radiator cold drawing or power lug, thermal source table
Can generate heat after face, radiator cold drawing or power lug energising, organic carrier is heated volatilization, and afterwards, low-melting-point metal can make thermal source
And be connected between radiator time, electric wire, the air gap can be got rid of to greatest extent, and be effectively reduced thermal contact resistance
Or contact resistance.
Embodiment 2
Fig. 1 is the cooling curve figure of the low-melting-point metal that fusing point is 108 ± 1 DEG C of the middle present invention.
The bonding cream of the low-melting-point metal that a kind of fusing point is 108 ± 1 DEG C in the present embodiment, it is characterised in that it comprises low
Melting point metals and organic carrier；
Described low-melting-point metal is by the silver composition of indium, stannum, zinc metal, and trace；
The mass fraction of described low-melting-point metal is indium 50.4%, stannum 46.8%, zinc 2.3%, and surplus is silver.
The heating of described organic carrier is volatile, for resin；
The heat conduction of the bonding cream of described low-melting-point metal and electric conductivity are excellent, and it both can serve as conductive adhesive cream, again can be as leading
Heat bonding cream uses.
A kind of fusing point is the preparation method of the bonding cream of low-melting-point metal of 108 ± 1 DEG C, it is characterised in that it comprises following
Step:
(1) raw material of the low-melting-point metal of weighing needs preparation: indium, stannum, zinc, and the silver of trace；
(2) under vacuum or inert gas conditions, indium metal is heated to fusing；It is slowly added into metallic tin in the indium of fusing,
Limit heating edge is slowly stirred simultaneously；Treating that stannum is fully dissolved in indium, then add metallic zinc, limit heating edge is slowly stirred, until zinc
All dissolve；Finally add the silver of trace, heat and be slowly stirred, until alloy becomes molten condition；At vacuum or indifferent gas
Under concrete conditions in the establishment of a specific crime, molten alloy is slowly stirred 1h under 300 ~ 330 ° of C constant temperatures, it is ensured that metal fully fuses；
(3) under vacuum or inert gas conditions, make the alloy natural cooling melted, prepare described low-melting point metal alloy；
(4) inert gas atomizer method is used to prepare low-melting alloy powder prepared low-melting point metal alloy；
(5) finally by low-melting alloy powder sieving, and add in organic carrier, prepare the bonding cream of described low-melting-point metal.
During use, bonding for low-melting-point metal cream is coated in heat source surface, radiator cold drawing or power lug, thermal source table
Can generate heat after face, radiator cold drawing or power lug energising, organic carrier is heated volatilization, and afterwards, low-melting-point metal can make thermal source
And be connected between radiator time, electric wire, the air gap can be got rid of to greatest extent, and be effectively reduced thermal contact resistance
Or contact resistance.
Embodiment 3
Fig. 1 is the cooling curve figure of the low-melting-point metal that fusing point is 108 ± 1 DEG C of the middle present invention.
The bonding cream of the low-melting-point metal that a kind of fusing point is 108 ± 1 DEG C in the present embodiment, it is characterised in that it comprises low
Melting point metals and organic carrier；
Described low-melting-point metal is made up of the cerium of indium, stannum, zinc metal, and trace；
The mass fraction of described low-melting-point metal be indium 51.4%, stannum 46.8% ~, zinc 1.3%, surplus is cerium.
The heating of described organic carrier is volatile, for resin.
The heat conduction of the bonding cream of described low-melting-point metal and electric conductivity are excellent, and it both can serve as conductive adhesive cream, and can make again
Use for the bonding cream of heat conduction.
A kind of fusing point is the preparation method of the bonding cream of low-melting-point metal of 108 ± 1 DEG C, it is characterised in that it comprises following
Step:
(1) raw material of the low-melting-point metal of weighing needs preparation: indium, stannum, zinc, and the cerium of trace；
(2) under vacuum or inert gas conditions, indium metal is heated to fusing；It is slowly added into metallic tin in the indium of fusing,
Limit heating edge is slowly stirred simultaneously；Treating that stannum is fully dissolved in indium, then add metallic zinc, limit heating edge is slowly stirred, until zinc
All dissolve；Finally add the cerium of trace, heat and be slowly stirred, until alloy becomes molten condition；At vacuum or indifferent gas
Under concrete conditions in the establishment of a specific crime, molten alloy is slowly stirred 1h under 300 ~ 330 ° of C constant temperatures, it is ensured that metal fully fuses；
(3) under vacuum or inert gas conditions, make the alloy natural cooling melted, prepare described low-melting point metal alloy；
(4) inert gas atomizer method is used to prepare low-melting alloy powder prepared low-melting point metal alloy；
(5) finally by low-melting alloy powder sieving, and add in organic carrier, prepare the bonding cream of described low-melting-point metal.
During use, bonding for low-melting-point metal cream is coated in heat source surface, radiator cold drawing or power lug, thermal source table
Can generate heat after face, radiator cold drawing or power lug energising, organic carrier is heated volatilization, and afterwards, low-melting-point metal can make thermal source
And be connected between radiator time, electric wire, the air gap can be got rid of to greatest extent, and be effectively reduced thermal contact resistance
Or contact resistance.
Embodiment 4
Fig. 1 is the cooling curve figure of the low-melting-point metal that fusing point is 108 ± 1 DEG C of the middle present invention.
The bonding cream of the low-melting-point metal that a kind of fusing point is 108 ± 1 DEG C in the present embodiment, it is characterised in that it comprises low
Melting point metals and organic carrier；
Described low-melting-point metal is made up of the neodymium of indium, stannum, zinc metal, and trace；
The mass fraction of described low-melting-point metal is indium 50.4%, stannum 47.8%, zinc 1.3%, and surplus is neodymium.
The heating of described organic carrier is volatile, for resin.
The heat conduction of the bonding cream of described low-melting-point metal and electric conductivity are excellent, and it both can serve as conductive adhesive cream, and can make again
Use for the bonding cream of heat conduction.
A kind of fusing point is the preparation method of the bonding cream of low-melting-point metal of 108 ± 1 DEG C, it is characterised in that it comprises following
Step:
(1) raw material of the low-melting-point metal of weighing needs preparation: indium, stannum, zinc, and the neodymium of trace；
(2) under vacuum or inert gas conditions, indium metal is heated to fusing；It is slowly added into metallic tin in the indium of fusing,
Limit heating edge is slowly stirred simultaneously；Treating that stannum is fully dissolved in indium, then add metallic zinc, limit heating edge is slowly stirred, until zinc
All dissolve；Finally add the neodymium of trace, heat and be slowly stirred, until alloy becomes molten condition；At vacuum or indifferent gas
Under concrete conditions in the establishment of a specific crime, molten alloy is slowly stirred 1h under 300 ~ 330 ° of C constant temperatures, it is ensured that metal fully fuses；
(3) under vacuum or inert gas conditions, make the alloy natural cooling melted, prepare described low-melting point metal alloy；
(4) inert gas atomizer method is used to prepare low-melting alloy powder prepared low-melting point metal alloy；
(5) finally by low-melting alloy powder sieving, and add in organic carrier, prepare the bonding cream of described low-melting-point metal.
During use, bonding for low-melting-point metal cream is coated in heat source surface, radiator cold drawing or power lug, thermal source table
Can generate heat after face, radiator cold drawing or power lug energising, organic carrier is heated volatilization, and afterwards, low-melting-point metal can make thermal source
And be connected between radiator time, electric wire, the air gap can be got rid of to greatest extent, and be effectively reduced thermal contact resistance
Or contact resistance.
Finally it should be noted that above example is only in order to illustrate technical scheme and unrestricted.Although reference
The present invention has been described in detail by embodiment, it will be understood by those within the art that, to technical scheme
Modifying or equivalent, without departure from the spirit and scope of technical solution of the present invention, it all should be contained the present invention's
In the middle of right.
Claims (4)
1. a fusing point is the bonding cream of low-melting-point metal of 108 ± 1 DEG C, it is characterised in that it comprises low-melting-point metal and organic
Carrier；
Described low-melting-point metal comprises indium, stannum, zinc metal；
The mass fraction scope of described low-melting-point metal be respectively indium 50.4% ~ 51.4%, stannum 46.8% ~ 47.8%, zinc 1.3% ~
2.3%。
2. the bonding cream of the low-melting-point metal that a kind of fusing point is 108 ± 1 DEG C as described in claim 1, it is characterised in that described in have
Airborne body heating volatile, for ethanol, propanol, butanol, acetone, toluene isobutyl ketone, ethyl acetate, butyl acetate, resin,
One or more in Polyethylene Glycol or resin derivative.
3. the bonding cream of the low-melting-point metal that a kind of fusing point is 108 ± 1 DEG C as described in claim 1, it is characterised in that described low
Melting point metals adds in the cerium of trace, neodymium, yttrium, silver or nickel one or more, low-melting-point metal microalloying can be made,
To improve the performances such as the intensity of low-melting-point metal.
4. the preparation method of the bonding cream of the low-melting-point metal that a kind of fusing point is 108 ± 1 DEG C as described in claim 1, its feature
Being, it comprises the steps of
(1) raw material of the low-melting-point metal of weighing needs preparation: indium, stannum, zinc；
(2) under vacuum or inert gas conditions, indium metal is heated to fusing；It is slowly added into metallic tin in the indium of fusing,
Limit heating edge is slowly stirred simultaneously；Treating that stannum is fully dissolved in indium, then add metallic zinc, limit heating edge is slowly stirred, until zinc
All dissolve；Finally, if it is desired, one or more added in the cerium of trace, neodymium, yttrium, silver or nickel, heat and delay
Slow stirring, until alloy becomes molten condition；Under vacuum or inert gas conditions, molten alloy is at 300 ~ 330 ° of C constant temperatures
Under be slowly stirred 1h, it is ensured that metal fully fuses；
(3) under vacuum or inert gas conditions, make the alloy natural cooling melted, prepare described low-melting point metal alloy；
(4) inert gas atomizer method is used to prepare low-melting alloy powder prepared low-melting point metal alloy；
(5) finally by low-melting alloy powder sieving, and add in organic carrier, prepare the bonding cream of described low-melting-point metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610492015.3A CN106118538A (en) | 2016-06-29 | 2016-06-29 | Fusing point is bonding cream of low-melting-point metal of 108 ± 1 DEG C and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610492015.3A CN106118538A (en) | 2016-06-29 | 2016-06-29 | Fusing point is bonding cream of low-melting-point metal of 108 ± 1 DEG C and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106118538A true CN106118538A (en) | 2016-11-16 |
Family
ID=57284494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610492015.3A Pending CN106118538A (en) | 2016-06-29 | 2016-06-29 | Fusing point is bonding cream of low-melting-point metal of 108 ± 1 DEG C and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106118538A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106714530A (en) * | 2017-03-14 | 2017-05-24 | 苏州天脉导热科技有限公司 | Heat dissipation device based on metal phase change thermal conductivity and electric conductivity and using method thereof |
| CN107488416A (en) * | 2017-09-20 | 2017-12-19 | 天津沃尔提莫新材料技术股份有限公司 | A kind of PET heat conduction films of the filler containing liquid metal for conducting heat |
| CN107488436A (en) * | 2017-09-20 | 2017-12-19 | 天津沃尔提莫新材料技术股份有限公司 | A kind of two-component heat-conducting silica gel sheet of the filler containing liquid metal for conducting heat |
| CN109135612A (en) * | 2018-08-10 | 2019-01-04 | 云南科威液态金属谷研发有限公司 | A kind of low-melting-point metal micro-nano powder conducting resinl and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1795280A (en) * | 2003-05-29 | 2006-06-28 | 松下电器产业株式会社 | Temperature fuse element, temperature fuse and battery using the same |
| CN103460436A (en) * | 2011-04-11 | 2013-12-18 | 通用电气公司 | Low temperature contact structure for flexible solid state device |
| CN104889397A (en) * | 2014-03-03 | 2015-09-09 | 中国科学院理化技术研究所 | Low-melting-point metal wire for 3D printing and manufacturing method thereof |
-
2016
- 2016-06-29 CN CN201610492015.3A patent/CN106118538A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1795280A (en) * | 2003-05-29 | 2006-06-28 | 松下电器产业株式会社 | Temperature fuse element, temperature fuse and battery using the same |
| CN103460436A (en) * | 2011-04-11 | 2013-12-18 | 通用电气公司 | Low temperature contact structure for flexible solid state device |
| CN104889397A (en) * | 2014-03-03 | 2015-09-09 | 中国科学院理化技术研究所 | Low-melting-point metal wire for 3D printing and manufacturing method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106714530A (en) * | 2017-03-14 | 2017-05-24 | 苏州天脉导热科技有限公司 | Heat dissipation device based on metal phase change thermal conductivity and electric conductivity and using method thereof |
| CN107488416A (en) * | 2017-09-20 | 2017-12-19 | 天津沃尔提莫新材料技术股份有限公司 | A kind of PET heat conduction films of the filler containing liquid metal for conducting heat |
| CN107488436A (en) * | 2017-09-20 | 2017-12-19 | 天津沃尔提莫新材料技术股份有限公司 | A kind of two-component heat-conducting silica gel sheet of the filler containing liquid metal for conducting heat |
| CN107488436B (en) * | 2017-09-20 | 2022-04-22 | 深圳沃尔提莫电子材料有限公司 | Two-component heat-conducting silica gel sheet containing liquid metal heat-conducting filler |
| CN107488416B (en) * | 2017-09-20 | 2022-05-03 | 深圳沃尔提莫电子材料有限公司 | PET heat-conducting film containing liquid metal heat-conducting filler |
| CN109135612A (en) * | 2018-08-10 | 2019-01-04 | 云南科威液态金属谷研发有限公司 | A kind of low-melting-point metal micro-nano powder conducting resinl and preparation method thereof |
| CN109135612B (en) * | 2018-08-10 | 2021-01-26 | 云南科威液态金属谷研发有限公司 | Low-melting-point metal micro-nano powder conductive adhesive and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106118538A (en) | Fusing point is bonding cream of low-melting-point metal of 108 ± 1 DEG C and preparation method thereof | |
| CN106119667A (en) | Fusing point is bonding cream of low-melting-point metal of 60 DEG C and its preparation method and application | |
| CN104992742B (en) | High viscosity low-melting-point metal conductive paste and preparation method thereof | |
| EP1902806A3 (en) | Process of microwave brazing with powder materials | |
| Qiao et al. | Research on electrical conductive adhesives filled with mixed filler | |
| CN105349866A (en) | Low-melting-point alloy with melting point being 40-60 DEG C and preparation method of low-melting-point alloy | |
| JP2011054892A (en) | Solder bonding using conductive paste | |
| CN103642465B (en) | A kind of liquid metal for conducting heat cream and its preparation method and application | |
| CN103985431B (en) | A kind of high intensity printed circuit board (PCB) conductive silver paste and preparation method thereof | |
| CN107350663B (en) | Liquid metal enhances base nano mattisolda thermal interfacial material and preparation method thereof | |
| CN105483486A (en) | Low-melting-point alloy and thermal interface material made from low-melting-point alloy | |
| CN103722304B (en) | A kind of aluminium alloy interface low temperature diffusion connection material for interface enhancing heat transfer | |
| US7923289B2 (en) | Process for fabricating a semiconductor package | |
| CN103693854B (en) | A kind of Unlead low-smelting point microcrystalline glass powder and preparation method thereof | |
| CN104299738A (en) | Novel electrode electronic component and preparation method thereof | |
| JP2009199746A (en) | Heat-generating glass, and its manufacturing method of the same | |
| US20150183063A1 (en) | Method of joining silver paste | |
| CN105609432A (en) | Method of bonding with silver paste | |
| CN104464889A (en) | Embedded resistance paste | |
| CN105632950A (en) | Method for bonding with a silver paste | |
| JP4953873B2 (en) | Composite bonding material and bonded body | |
| CN103996425A (en) | Nanometer carbon-containing circuit board conductive silver paste and preparation method thereof | |
| CN104464892A (en) | Carbon glue thick-film resistor sizing | |
| CN104529434B (en) | A kind of preparation method of chip ceramic PTC thermistor surface protective layer | |
| CN106128966A (en) | Environmental protection welded encapsulation technique |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20161116 |