CN106100583A - 判断perc电池背钝化膜层钝化质量的方法 - Google Patents
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- 230000000694 effects Effects 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 229910017107 AlOx Inorganic materials 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 101100117236 Drosophila melanogaster speck gene Proteins 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002537 cosmetic Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
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- 229910052738 indium Inorganic materials 0.000 description 2
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- 238000012544 monitoring process Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 206010021703 Indifference Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004020 SiCz Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
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Abstract
本发明涉及一种判断PERC电池背钝化膜层钝化质量的方法,其特征是,包括以下步骤:(1)从一批次电池半成品中抽样进行检测;(2)将抽样出的电池半成品放入体积百分数为4~10%的氢氟酸溶液中,观察氢氟酸溶液对电池半成品表面钝化膜层的腐蚀情况;当电池半成品表面各处腐蚀速度均匀,无局部色差、无絮状物出现、无局部显示疏水性,则为合格产品,否则为不合格品,该批次电池半成品进行返工处理。本发明能以快速、有效、便捷、低成本的方式判断AlOx/SiNy叠层钝化膜的钝化质量。
Description
技术领域
本发明涉及一种判断PERC(钝化发射极背面接触)电池背钝化膜层钝化质量的方法,尤其是一种用化学腐蚀法快速判断钝化发射极和PERC电池背钝化膜层钝化质量的方法,属于晶体硅太阳电池制造技术领域。
背景技术
提高转换效率、降低制造成本始终是光伏产业发展的两条主线。在众多光伏电池技术路线中,晶体硅电池技术始终占据着最大的市场份额,因此提高产业化的晶体硅电池转换效率已成为业界的广泛诉求。近几年来,随着晶体硅材料质量和电池前表面技术的不断提升,电池效率已有了较大幅度的提高,但是电池背表面较为严重的光学和电学损失已成为制约电池效率进一步提升的瓶颈。PERC电池结构不仅可以大幅降低背表面电学复合速率,还可以形成良好的内部光学背反射机制,尤其是在硅片向着薄片化的发展趋势下,电池表面钝化质量和内部背反射效果的重要性就更加凸显。选择合适的背面钝化膜结构、合适的背面钝化膜沉积技术以及合适的背面钝化膜电池集成工艺,已成为背面钝化技术从实验室走向生产应用必须解决的问题。
目前在对晶体硅电池的钝化研究领域通常采用的钝化膜主要包括氧化硅(SiO2)、氧化铝(AlOx)、氮化硅(SiNy)、碳化硅(SiCz)以及非晶硅(a-Si)等。其中,AlOx由于其自身固定负电荷可以为P型晶体硅表面提供良好的场效应钝化,成为一种目前广受业界关注的P型晶体硅电池背表面钝化材料,并在单晶硅电池上获得了不少成功的应用。已产业化的AlOx沉积方式有ALD原子层沉积法、PECVD等离子体增强化学气相沉积法。
PERC工艺流程如下:制绒清洗→扩散→刻蚀→PECVD沉积背面AlOx→PECVD沉积背面和正面SiNy→背面激光开窗→丝网印刷正、背电极→烧结→分检测试。如图4所示,为现有PERC电池的结构,图中1为Al层,2为SiNy导,3为AlOx层,4为P型晶体硅,5为N+发射区,6为SiNy,7为Al背场,8为银电极。
在生产过程中,PECVD设备真空度、沉积温度、气体流量等关键因素都会影响背面AlOx/SiNy叠层钝化膜的钝化效果。钝化效果通常和AlOx/SiNy钝化层厚度、致密性等参数相关。致密性好的AlOx/SiNy钝化膜层可以有效防止铝浆在高温烧结过程中和钝化层反应而破坏AlOx/SiNy钝化膜层的钝化效果。为了评估AlOx/SiNy叠层钝化膜的钝化效果,实验室里可采用傅里叶红外光谱仪(FTIR)对AlOx和SiNy膜的微结构进行分析,由此判断钝化效果的好坏。该方法只能单片分析不能批量分析,检测设备昂贵。AlOx钝化层的厚度通常在10-20nm之间,从外观看已沉积AlOx后的硅片表面通常还是硅本色,很难发现工艺异常。
发明内容
本发明的目的是克服现有技术中存在的不足,提供一种判断PERC电池背钝化膜层钝化质量的方法,能以快速、有效、便捷、低成本的方式判断AlOx/SiNy叠层钝化膜的钝化质量。
按照本发明提供的技术方案,所述判断PERC电池背钝化膜层钝化质量的方法,其特征是,包括以下步骤:
(1)从一批次电池半成品中抽样进行检测;
(2)将抽样出的电池半成品放入体积百分数为4~10%的氢氟酸溶液中,观察氢氟酸溶液对电池半成品表面钝化膜层的腐蚀情况;当电池半成品表面各处腐蚀速度均匀,无局部色差、无絮状物出现、无局部显示疏水性,则为合格产品,否则为不合格品,该批次电池半成品进行返工处理。
进一步的,所述抽样率为5%~10%。
进一步的,所述氢氟酸溶液放置于耐HF腐蚀的承载盒中。
进一步的,当电池半成品表面各处腐蚀速度均匀,钝化膜层由紫红、淡蓝、深蓝、红、黄褐色依次变化至腐蚀完全显示为硅本色,则为合格产品。
进一步的,当出现局部色差,则电池半成品出现局部钝化;当出现絮状物,则电池半成品钝化膜层致密性差。
本发明具有以下优点:
(1)本发明通过观察腐蚀过程中AlOx/SiNy钝化膜层的外观变化、腐蚀速率、表面状态,来判断AlOx/SiNy钝化膜层的致密性、厚度等等。
(2)本发明成本低廉,无固定设备投资,可以批量分析,分析过程不用破损硅片,分析后所有硅片可做返工处理,提高PERC电池生产过程中的成品率。
(3)本发明通过化学腐蚀过程中表现出来的特征判断工艺是否正常,该方法可以作为产线镀膜工艺监控手段,如有异常可快速判断是否是镀膜工艺问题,及时排查产线异常,避免批量异常的发生。
(4)本发明不仅可以作为镀膜工艺监控、排查半成品问题的方法,还可以用来分析成品EL不良电池。
附图说明
图1为实施例一PERC电池浸没在HF溶液中出现条状色差的示意图。
图2为实施例三中电池片的EL照片。
图3为实施例三电池片浸没在HF溶液中出现的脱水形貌示意图。
图4为PERC电池的结构示意图。
具体实施方式
下面结合具体实施例对本发明作进一步说明。
本发明所述判断PERC电池背钝化膜层钝化质量的方法,能够快速地进行判断,从一批次电池半成品中抽样进行检测,以判断这一批次产品的合格率,确定是否需要将该批次电池半成品进行返工处理,以避免进入后道工序时将该批次产品全部作降级处理,造成较大损失。具体判断方法采用化学溶液腐蚀法,将电池半成品放入体积百分数为4~10%的氢氟酸溶液中,通过观察氢氟酸和腐蚀AlOx/SiNy过程中钝化膜层的外观变化、腐蚀速率、表面状态、表面脱水状态,来判断钝化膜层的致密性、厚度等,从而判断钝化膜层的钝化效果。本发明所述判断方法方便快捷,无设备投入,可以批量腐蚀批量分析。一般,当电池半成品表面各处腐蚀速度均匀,钝化膜层由紫红、淡蓝、深蓝、红、黄褐色依次变化至腐蚀完全显示为硅本色,各个腐蚀阶段无局部色差、无絮状物出现(为脱落的AlOx/SiNy钝化膜层)、无局部显示疏水性,则为合格产品,否则为不合格品。
实施例1:
将经PECVD镀完背面AlOx/SiNy钝化膜层的PERC电池半成品放入体积百分数为4%的HF溶液中,电池半成品外观颜色看起来完全正常,将电池半成品一半暴露在空气中,一半浸没在HF溶液中,观察浸没在HF溶液中的硅片表面状态变化,反应至7分钟时电池半成品表面局部区域出现了“条状”色差(如图1所示的区域A,虚线以下为浸没在HF溶液中的区域),显示局部区域腐蚀速率过快,局部区域腐蚀速率很慢,说明AlOx/SiNy钝化膜层致密性差异大,尽管腐蚀前外观上整面看起来无差别,需要检查AlOx沉积过程中设备特气管路局部是否有堵孔,导致局部区域呈现“条状”钝化。仅观察半成品外观不能发现该异常,但通过腐蚀过程中表现出来的特性可判断出镀膜工艺存在异常。
实施例2:
将经PECVD镀完背面AlOx/SiNy钝化膜层的PERC电池半成品放入体积百分数为4%的HF溶液中,电池半成品一半暴露在空气中,一半浸没在HF溶液中,观察浸没在HF溶液中的硅片表面状态变化,反应至4分钟时电池半成品表面出现了白色“絮状物”,该“絮状物”为小整片脱落的AlOx/SiNy钝化膜层,由于AlOx/SiNy钝化膜层致密性差,钝化膜层在HF溶液中受到了HF的钻蚀而脱落,腐蚀5分钟时半成品表面已完全脱水,说明AlOx/SiNy膜层致密性很差。
实施例3:
将外观正常但EL下呈现黑斑阴影(如图2所示)的成品电池腐蚀掉正面和背面电极,用体积百分数为8%的HF溶液腐蚀背膜,腐蚀过程中发现背膜呈现与EL黑斑阴影相同的脱水形貌(如图3所示的区域B,虚线以下为浸没在HF溶液中的区域),黑斑阴影处腐蚀3分钟后外观出现变化,腐蚀5分钟完全脱水,黑斑处镀膜存在异常,需排查镀膜工艺问题。
Claims (5)
1.一种判断PERC电池背钝化膜层钝化质量的方法,其特征是,包括以下步骤:
(1)从一批次电池半成品中抽样进行检测;
(2)将抽样出的电池半成品放入体积百分数为4~10%的氢氟酸溶液中,观察氢氟酸溶液对电池半成品表面钝化膜层的腐蚀情况;当电池半成品表面各处腐蚀速度均匀,无局部色差、无絮状物出现、无局部显示疏水性,则为合格产品,否则为不合格品,该批次电池半成品进行返工处理。
2.如权利要求1所述的判断PERC电池背钝化膜层钝化质量的方法,其特征是:所述抽样率为5%~10%。
3.如权利要求1所述的判断PERC电池背钝化膜层钝化质量的方法,其特征是:所述氢氟酸溶液放置于耐HF腐蚀的承载盒中。
4.如权利要求1所述的判断PERC电池背钝化膜层钝化质量的方法,其特征是:当电池半成品表面各处腐蚀速度均匀,钝化膜层由紫红、淡蓝、深蓝、红、黄褐色依次变化至腐蚀完全显示为硅本色,,则为合格产品。
5.如权利要求1所述的判断PERC电池背钝化膜层钝化质量的方法,其特征是:当出现局部色差,则电池半成品出现局部钝化;当出现絮状物,则电池半成品钝化膜层致密性差。
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