CN106098841A - 一种铜锌锡硫光电纤维的制备方法 - Google Patents
一种铜锌锡硫光电纤维的制备方法 Download PDFInfo
- Publication number
- CN106098841A CN106098841A CN201610485083.7A CN201610485083A CN106098841A CN 106098841 A CN106098841 A CN 106098841A CN 201610485083 A CN201610485083 A CN 201610485083A CN 106098841 A CN106098841 A CN 106098841A
- Authority
- CN
- China
- Prior art keywords
- copper
- parts
- prepared
- tin
- zinc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000835 fiber Substances 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- WILFBXOGIULNAF-UHFFFAOYSA-N copper sulfanylidenetin zinc Chemical compound [Sn]=S.[Zn].[Cu] WILFBXOGIULNAF-UHFFFAOYSA-N 0.000 title claims abstract description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052802 copper Inorganic materials 0.000 claims abstract description 29
- 239000010949 copper Substances 0.000 claims abstract description 29
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 24
- 235000002918 Fraxinus excelsior Nutrition 0.000 claims abstract description 23
- 239000002956 ash Substances 0.000 claims abstract description 23
- 238000000498 ball milling Methods 0.000 claims abstract description 22
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims abstract description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000001354 calcination Methods 0.000 claims abstract description 14
- 239000011812 mixed powder Substances 0.000 claims abstract description 14
- 239000002243 precursor Substances 0.000 claims abstract description 12
- 238000010041 electrostatic spinning Methods 0.000 claims abstract description 11
- 239000004372 Polyvinyl alcohol Substances 0.000 claims abstract description 8
- 229960000583 acetic acid Drugs 0.000 claims abstract description 8
- 239000012362 glacial acetic acid Substances 0.000 claims abstract description 8
- 238000007885 magnetic separation Methods 0.000 claims abstract description 8
- 229920002451 polyvinyl alcohol Polymers 0.000 claims abstract description 8
- 239000008187 granular material Substances 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 12
- 230000020477 pH reduction Effects 0.000 claims description 12
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 10
- 239000005751 Copper oxide Substances 0.000 claims description 10
- 229910000431 copper oxide Inorganic materials 0.000 claims description 10
- 239000002893 slag Substances 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000002270 dispersing agent Substances 0.000 claims description 6
- 239000000706 filtrate Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- 239000006193 liquid solution Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 9
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
- 239000011593 sulfur Substances 0.000 abstract 1
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000013019 agitation Methods 0.000 description 4
- 229960000935 dehydrated alcohol Drugs 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- 238000005903 acid hydrolysis reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
- Artificial Filaments (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610485083.7A CN106098841B (zh) | 2016-06-28 | 2016-06-28 | 一种铜锌锡硫光电纤维的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610485083.7A CN106098841B (zh) | 2016-06-28 | 2016-06-28 | 一种铜锌锡硫光电纤维的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106098841A true CN106098841A (zh) | 2016-11-09 |
CN106098841B CN106098841B (zh) | 2017-12-12 |
Family
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Family Applications (1)
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CN201610485083.7A Active CN106098841B (zh) | 2016-06-28 | 2016-06-28 | 一种铜锌锡硫光电纤维的制备方法 |
Country Status (1)
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CN (1) | CN106098841B (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010135622A1 (en) * | 2009-05-21 | 2010-11-25 | E. I. Du Pont De Nemours And Company | Copper zinc tin chalcogenide nanoparticles |
US8044477B1 (en) * | 2010-09-30 | 2011-10-25 | General Electric Company | Photovoltaic device and method for making |
CN103078010A (zh) * | 2013-02-03 | 2013-05-01 | 电子科技大学 | 一种铜锌锡硫薄膜太阳能电池的全非真空工艺制备方法 |
CN103382090A (zh) * | 2013-07-11 | 2013-11-06 | 深圳市亚太兴实业有限公司 | 一种连续制备铜锌锡硫薄膜的方法 |
US20130302597A1 (en) * | 2012-05-09 | 2013-11-14 | Commissariat A L'energie Atomique Et Aux Ene Alt | Method for producing a film by cu2znsns4 silar |
WO2015145167A1 (en) * | 2014-03-28 | 2015-10-01 | Big Solar Limited | Optoelectronic device and method of producing the same |
-
2016
- 2016-06-28 CN CN201610485083.7A patent/CN106098841B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010135622A1 (en) * | 2009-05-21 | 2010-11-25 | E. I. Du Pont De Nemours And Company | Copper zinc tin chalcogenide nanoparticles |
US8044477B1 (en) * | 2010-09-30 | 2011-10-25 | General Electric Company | Photovoltaic device and method for making |
US20130302597A1 (en) * | 2012-05-09 | 2013-11-14 | Commissariat A L'energie Atomique Et Aux Ene Alt | Method for producing a film by cu2znsns4 silar |
CN103078010A (zh) * | 2013-02-03 | 2013-05-01 | 电子科技大学 | 一种铜锌锡硫薄膜太阳能电池的全非真空工艺制备方法 |
CN103382090A (zh) * | 2013-07-11 | 2013-11-06 | 深圳市亚太兴实业有限公司 | 一种连续制备铜锌锡硫薄膜的方法 |
WO2015145167A1 (en) * | 2014-03-28 | 2015-10-01 | Big Solar Limited | Optoelectronic device and method of producing the same |
Non-Patent Citations (2)
Title |
---|
刘爱芳: "静电纺丝法制备铜锌锡硫微纳米纤维及其性能表征", 《硕士学位论文数据库》 * |
胡家瑞: "太阳能电池铜锌锡硫吸收层非真空法制备技术研究", 《中国优秀硕士论文全文库》 * |
Also Published As
Publication number | Publication date |
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CN106098841B (zh) | 2017-12-12 |
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Effective date of registration: 20170908 Address after: 362300 Nanan Province, Quanzhou City, the town of high-tech park Applicant after: NAN'AN QUANHONG INCUBATOR MANAGEMENT CO.,LTD. Address before: 213164 Jiangsu city in Changzhou Province, Zhonglou District Baiyun Dongyuan building 6 Room 401 a unit Applicant before: Chen Jianfeng |
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TR01 | Transfer of patent right |
Effective date of registration: 20190115 Address after: Room 302, No. 13, Changxin Apartment, Wuxi New District, Jiangsu Province Patentee after: Yu Tao Address before: 510000 B1B2, one, two, three and four floors of the podium building 231 and 233, science Avenue, Guangzhou, Guangdong. Patentee before: BOAO ZONGHENG NETWORK TECHNOLOGY Co.,Ltd. Effective date of registration: 20190115 Address after: 510000 B1B2, one, two, three and four floors of the podium building 231 and 233, science Avenue, Guangzhou, Guangdong. Patentee after: BOAO ZONGHENG NETWORK TECHNOLOGY Co.,Ltd. Address before: 362300 Luncang Town High-tech Park, Nanan City, Quanzhou City, Fujian Province Patentee before: NAN'AN QUANHONG INCUBATOR MANAGEMENT CO.,LTD. |
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Effective date of registration: 20190422 Address after: Room 402, No. 40, Ercun, Qiaoqiao, Nanchang District, Wuxi City, Jiangsu Province Co-patentee after: Yang Xun Patentee after: Shen Zhihui Co-patentee after: Yu Xiaochun Co-patentee after: Xu Lijia Co-patentee after: Yu Lin Co-patentee after: Yu Tao Co-patentee after: Wang Ganhua Address before: Room 302, No. 13, Changxin Apartment, Wuxi New District, Jiangsu Province Patentee before: Yu Tao |
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Effective date of registration: 20190605 Address after: 214000 Chengnan Road, Wuxi New District, Jiangsu Province 209-3 Patentee after: WUXI CHAOZHOU TECHNOLOGY Co.,Ltd. Address before: Room 402, No. 40, Ercun, Qiaoqiao, Nanchang District, Wuxi City, Jiangsu Province Co-patentee before: Yang Xun Patentee before: Shen Zhihui Co-patentee before: Yu Xiaochun Co-patentee before: Xu Lijia Co-patentee before: Yu Lin Co-patentee before: Yu Tao Co-patentee before: Wang Ganhua |
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