CN106098677B - 单芯片正交混合耦合器管芯和平衡式功率放大器模块 - Google Patents
单芯片正交混合耦合器管芯和平衡式功率放大器模块 Download PDFInfo
- Publication number
- CN106098677B CN106098677B CN201610575796.2A CN201610575796A CN106098677B CN 106098677 B CN106098677 B CN 106098677B CN 201610575796 A CN201610575796 A CN 201610575796A CN 106098677 B CN106098677 B CN 106098677B
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- inductor
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- metal
- hybrid coupler
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 97
- 239000002184 metal Substances 0.000 claims abstract description 97
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 238000005516 engineering process Methods 0.000 claims abstract description 12
- 238000002955 isolation Methods 0.000 claims abstract description 6
- 239000003990 capacitor Substances 0.000 claims description 55
- 238000003466 welding Methods 0.000 claims description 20
- 230000005611 electricity Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000000694 effects Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610575796.2A CN106098677B (zh) | 2016-07-20 | 2016-07-20 | 单芯片正交混合耦合器管芯和平衡式功率放大器模块 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610575796.2A CN106098677B (zh) | 2016-07-20 | 2016-07-20 | 单芯片正交混合耦合器管芯和平衡式功率放大器模块 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106098677A CN106098677A (zh) | 2016-11-09 |
CN106098677B true CN106098677B (zh) | 2018-05-01 |
Family
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Family Applications (1)
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CN201610575796.2A Active CN106098677B (zh) | 2016-07-20 | 2016-07-20 | 单芯片正交混合耦合器管芯和平衡式功率放大器模块 |
Country Status (1)
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CN (1) | CN106098677B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108631036B (zh) * | 2018-04-09 | 2023-10-20 | 王宇晨 | 单芯片正交3dB定向耦合器 |
CN109037196A (zh) * | 2018-08-28 | 2018-12-18 | 湖南格兰德芯微电子有限公司 | 耦合电感结构 |
CN113065309B (zh) * | 2021-03-22 | 2022-05-27 | 浙江大学 | 一种功率半导体模块寄生电感建模提取方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101946320A (zh) * | 2008-03-24 | 2011-01-12 | 飞思卡尔半导体公司 | 具有低成本衬底的集成无源装置和方法 |
CN103650342A (zh) * | 2012-01-05 | 2014-03-19 | 松下电器产业株式会社 | 正交混合耦合器、放大器及无线通信装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6806789B2 (en) * | 2002-01-22 | 2004-10-19 | M/A-Com Corporation | Quadrature hybrid and improved vector modulator in a chip scale package using same |
JP2009239882A (ja) * | 2008-03-04 | 2009-10-15 | Japan Radio Co Ltd | 高周波電力増幅器 |
-
2016
- 2016-07-20 CN CN201610575796.2A patent/CN106098677B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101946320A (zh) * | 2008-03-24 | 2011-01-12 | 飞思卡尔半导体公司 | 具有低成本衬底的集成无源装置和方法 |
CN103650342A (zh) * | 2012-01-05 | 2014-03-19 | 松下电器产业株式会社 | 正交混合耦合器、放大器及无线通信装置 |
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CN106098677A (zh) | 2016-11-09 |
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Effective date of registration: 20180611 Address after: No. 21, Fu Lin Road, Zhong Lou District, Changzhou, Jiangsu Patentee after: Han Tong Fei core (Changzhou) Electronic Technology Co., Ltd. Address before: 100101 room 505, unit 3, Kimcheon Times Square, 317, Tun Li, Chaoyang District, Beijing. Patentee before: Beijing fly fly Electronic Technology Co., Ltd. |
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Effective date of registration: 20181123 Address after: 100101 Jinquan Times Unit 1101 of Datun Road, Chaoyang District, Beijing Patentee after: Beijing fly fly Electronic Technology Co., Ltd. Address before: No. 21, Fu Lin Road, Zhong Lou District, Changzhou, Jiangsu Patentee before: Han Tong Fei core (Changzhou) Electronic Technology Co., Ltd. |
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Effective date of registration: 20181225 Address after: 100101 Building 1307, No. 6, Anhui 2, Chaoyang District, Beijing Patentee after: Wang Yuchen Address before: 100101 Jinquan Times Unit 1101 of Datun Road, Chaoyang District, Beijing Patentee before: Beijing fly fly Electronic Technology Co., Ltd. |
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Effective date of registration: 20190722 Address after: Room 204C and 204D, A7 Building, 218 Xinghu Street, Suzhou Industrial Park, Jiangsu Province Patentee after: SUZHOU JITAI INFORMATION TECHNOLOGY CO., LTD. Address before: 100101 Building 1307, No. 6, Anhui 2, Chaoyang District, Beijing Patentee before: Wang Yuchen |
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Effective date of registration: 20200106 Address after: 030000 Fenyuan Street project incubation base, Xinzhou Development Zone, Shanxi Province Patentee after: North latitude 38th degree integrated circuit manufacturing Co., Ltd Address before: Room 204C and 204D, A7 Building, 218 Xinghu Street, Suzhou Industrial Park, Jiangsu Province Patentee before: SUZHOU JITAI INFORMATION TECHNOLOGY CO., LTD. |
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