CN106098092A - Realize the circuit of memory card write-protect switch and reset - Google Patents
Realize the circuit of memory card write-protect switch and reset Download PDFInfo
- Publication number
- CN106098092A CN106098092A CN201610460702.7A CN201610460702A CN106098092A CN 106098092 A CN106098092 A CN 106098092A CN 201610460702 A CN201610460702 A CN 201610460702A CN 106098092 A CN106098092 A CN 106098092A
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- circuit
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
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Abstract
The present invention relates to a kind of circuit realizing memory card write-protect switch and reset; it is characterized in that; including having the transistor switching circuit receiving control signal; the metal-oxide-semiconductor on-off circuit being connected with described triode switch circuit, the external power source interface being connected with described metal-oxide-semiconductor on-off circuit and storage card power interface;When described transistor switching circuit turns on, described metal-oxide-semiconductor on-off circuit turns on, and power supply drives storage card through described external power source interface, described metal-oxide-semiconductor on-off circuit, described storage card power interface successively;When described transistor switching circuit turns off, described metal-oxide-semiconductor on-off circuit turns off, described storage card power-off.The circuit topology of the present invention is simple, and circuit malfunction rate is low, low cost, intuitively;Applied widely, it is applicable to the write-protect of polytype storage card and the control that resets.
Description
[technical field]
The present invention relates to storage device field, particularly relate to realize the circuit of memory card write-protect switch and reset.
[background technology]
In the control system that track traffic, aviation electronics etc. have safety and availability requirement, the storage card of system
Need have control system generation system complete machine reset or the data wire of storage card and address wire uncontrollable time, to storage card
Carry out writing protection function.Storage card internal data is prevented to be modified.Meanwhile, when breaking down inside storage card, storage card energy
Realize independent reset function.
At present, part storage card realizes write-protect by the frame for movement of self.Such as SD card self has one to write guarantor
" LOCK " switch protected, realizes the write-protect of SD card by adjusting the position of this switch.Do not exist on part storage card hardware
Write protection structure, can only realize write-protect by software.Such as TF card and CF card self, without write-protect switch, pass through software
Realize writing protection function.
At present, storage card does not has special reset circuit to reset self.Existing scheme is to storage by software
Card initializes, it is achieved the reset to storage card.
[summary of the invention]
For solving foregoing problems, the present invention proposes a kind of circuit realizing memory card write-protect switch and reset, for realizing
Storage card under system reset state, the function of its read-write state and write-protect state switching, be additionally operable to realize storage card independent
The ability resetted, improves the system identification to storage card.
For reaching object defined above, the present invention adopts the following technical scheme that a kind of electricity realizing memory card write-protect switch and reset
Road, it is characterised in that include that there is the transistor switching circuit receiving control signal, be connected with described triode switch circuit
Metal-oxide-semiconductor on-off circuit, the external power source interface being connected with described metal-oxide-semiconductor on-off circuit and storage card power interface;
When described transistor switching circuit turns on, described metal-oxide-semiconductor on-off circuit turns on, and power supply is successively through described external electrical
Source interface, described metal-oxide-semiconductor on-off circuit, described storage card power interface drive storage card;
When described transistor switching circuit turns off, described metal-oxide-semiconductor on-off circuit turns off, described storage card power-off.
First preferred version of the present invention is: also include being connected with described metal-oxide-semiconductor on-off circuit and described for indicating
The condition indication circuit of storage card power supply state.
Second preferred version of the present invention is: described transistor switching circuit includes receiving the first of described control signal
End, the first resistance, the second resistance, the 3rd resistance, the first audion;
Described first end is connected with one end of described first resistance, the other end of described first resistance and described second resistance
One end, the 3rd resistance one end connect;
The other end ground connection of described second resistance, the other end of described 3rd resistance connects the base stage of the first audion;
The grounded emitter of described first audion, the colelctor electrode of described first audion and described metal-oxide-semiconductor on-off circuit
Connect.
3rd preferred version of the present invention is: described metal-oxide-semiconductor on-off circuit include with in described transistor switching circuit
First transistor collector connect the second end, the 4th resistance, the 5th resistance, the first metal-oxide-semiconductor, the 6th resistance, for and outside
The external power source interface that DC source connects;
Described second end is connected with one end of described 4th resistance, the other end of described 4th resistance and a described MOS
Pipe G pole, one end of described 5th resistance connect;The described 5th resistance other end and described external power source interface, a described MOS
Pipe D pole connects;
The S pole of described first metal-oxide-semiconductor connects one end of the 6th resistance, storage card power interface;Described 6th resistance another
One end ground connection.
4th preferred version of the present invention is: described condition indication circuit includes positive pole and described storage card power interface
The light emitting diode connected and the 7th resistance being connected with described light emitting diode negative pole, described 7th resistance eutral grounding.
5th preferred version of the present invention is: described metal-oxide-semiconductor on-off circuit also includes the first electric capacity, described first electric capacity
One end is connected with the described 5th resistance other end, and the described first electric capacity other end is connected with described 5th resistance one end.
The present invention can reach following technique effect: circuit topology is simple, and circuit malfunction rate is low, low cost, intuitively;It is suitable for model
Enclose wide, be applicable to the write-protect of polytype storage card and the control that resets.
These features of the present invention and advantage will be detailed in following detailed description of the invention, accompanying drawing exposure.
[accompanying drawing explanation]
The present invention is described further below in conjunction with the accompanying drawings:
Fig. 1 is the theory diagram of the circuit realizing memory card write-protect switch and reset of the embodiment of the present invention 1.
Fig. 2 is the schematic diagram of the circuit realizing memory card write-protect switch and reset of the embodiment of the present invention 1.
[detailed description of the invention]
The technical scheme of the embodiment of the present invention is explained and illustrated by the accompanying drawing below in conjunction with the embodiment of the present invention, but under
State embodiment and be only the preferred embodiments of the present invention, and not all.Based on the embodiment in embodiment, those skilled in the art
On the premise of not making creative work, obtained other embodiments, broadly fallen into protection scope of the present invention.
Embodiment 1.
Referring to Fig. 1, a kind of circuit realizing memory card write-protect switch and reset, including having the audion receiving control signal
On-off circuit, the metal-oxide-semiconductor on-off circuit being connected with triode switch circuit, the external power source being connected with metal-oxide-semiconductor on-off circuit connects
Mouth and storage card power interface CARD_PWR;When transistor switching circuit turns on, metal-oxide-semiconductor on-off circuit turns on, and power supply is successively
Storage card is driven through external power source interface, metal-oxide-semiconductor on-off circuit, storage card power interface CARD_PWR;When triode switch electricity
When road turns off, metal-oxide-semiconductor on-off circuit turns off, storage card power-off;Also include being connected with metal-oxide-semiconductor on-off circuit and for indicating storage
The condition indication circuit of card power supply state.
Referring to Fig. 2, transistor switching circuit include receive the first end of control signal, the first resistance R1, the second resistance R2,
3rd resistance, the first audion;One end of first end and the first resistance R1 connects, the other end of the first resistance R1 and the second resistance
One end of R2, one end of the 3rd resistance R3 connect;The other end ground connection of the second resistance R2, the other end of the 3rd resistance R3 connects the
The base stage of one audion Q1;The grounded emitter of the first audion Q2, the colelctor electrode of the first audion Q1 and metal-oxide-semiconductor on-off circuit
Connect.
The second end that metal-oxide-semiconductor on-off circuit includes being connected with the first audion Q1 colelctor electrode in transistor switching circuit,
Four resistance R4, the 5th resistance R5, the first metal-oxide-semiconductor Q2, the 6th resistance R6, outside be connected with external dc power VCC_BAR
Portion's power interface;One end of second end and the 4th resistance R4 connects, the other end of the 4th resistance R4 and the G pole of the first metal-oxide-semiconductor Q2,
One end of 5th resistance R5 connects;The 5th resistance R5 other end is connected with the D pole of external power source interface, the first metal-oxide-semiconductor Q2;First
The S pole of metal-oxide-semiconductor Q2 connects one end of the 6th resistance R6, storage card power interface CARD_PWR;Another termination of 6th resistance R6
Ground.
Condition indication circuit include light emitting diode D1 that positive pole is connected with storage card power interface CARD_PWR and with send out
The 7th resistance R7 that optical diode D1 negative pole connects, the 7th resistance R7 ground connection.
Metal-oxide-semiconductor on-off circuit also includes that the first electric capacity C1, first electric capacity C1 one end are connected with the 5th resistance R5 other end, the
The one electric capacity C1 other end and the 5th resistance R5 one end connect.
Aforementioned storage card power interface CARD_PWR connects storage card.Aforementioned first ends is connected with ppu, is used for
Receive control signal CTR_SIG of processor.
Based on aforementioned circuit, specific works principle is as follows.
When control signal CTR_SIG that processor sends is high level, between the first resistance R1 and the second resistance R2
Dividing potential drop is high level.First audion Q1 base voltage is high level.The emitter junction voltage V_be voltage of the first audion Q1 is big
In threshold value V_ (be (on)), the first audion Q1 conducting.4th resistance R4, the 5th resistance R5 and the first audion Q1 series connection point
Pressure.The V_gs of the first metal-oxide-semiconductor Q2 is more than V_ (gs (th)), the first metal-oxide-semiconductor Q2 and turns on, now, and storage card power interface CARD_
PWR and power supply VCC turns on, storage card turn-on power.Storage card is in power-up state, is i.e. in read-write state.Now, can be right
Data wire or the address wire of storage card operate, and read and revise the data in storage card.Light emitting diode D1 is energized, and sends out
Go out green glow, indicate now storage card to be in read-write state.
When system needs reset or the data wire of storage card or address wire exists uncertain, need storage card
Carry out write-protect, it is to avoid storing card data is affected.When control signal CTR_SIG that processor sends is low level, the
Dividing potential drop between one resistance R1 and the second resistance R2 is low level.The both end voltage of the 3rd resistance R3 keeps consistent, for low level,
I.e. first audion Q1 base voltage keeps low level.The emitter junction voltage V_be voltage of the first audion Q1 is less than threshold value V_
(be (on)), the first audion Q1 is not turned on, and the voltage at the 5th resistance R5 two ends is consistent.The V_gs of the first metal-oxide-semiconductor Q2 is less than V_
(gs (th)), the first metal-oxide-semiconductor Q2 is not turned on, and now, storage card power interface CARD_PWR does not has voltage, and storage card cannot be led
Energising source.Storage card is in power-down state, is i.e. in write-protect state.Now, data wire or address wire to storage card enter
Row operation, it is impossible to the data in amendment storage card.
When system None-identified storage card, and cannot be by when under software or complete machine, electricity realizes the reset of storage card, can
By this circuit, storage card is carried out reset to operate.When control signal is become high level by low level again, the power supply of storage card
Again being become by power-off and power on, storage card re-starts initialization, it is ensured that system re-recognizes storage card.
The above, the only detailed description of the invention of the present invention, but protection scope of the present invention is not limited thereto, and is familiar with
This those skilled in the art should be understood that the present invention includes but not limited to accompanying drawing and interior described in detailed description of the invention above
Hold.Any it is intended to be included in the scope of claims without departing from the function of the present invention and the amendment of structural principle.
Claims (6)
1. the circuit realizing memory card write-protect switch and reset, it is characterised in that include that there are three poles receiving control signal
Pipe on-off circuit, the metal-oxide-semiconductor on-off circuit being connected with described triode switch circuit, it is connected with described metal-oxide-semiconductor on-off circuit
External power source interface and storage card power interface;
When described transistor switching circuit turns on, described metal-oxide-semiconductor on-off circuit turns on, and power supply connects through described external power source successively
Mouth, described metal-oxide-semiconductor on-off circuit, described storage card power interface drive storage card;
When described transistor switching circuit turns off, described metal-oxide-semiconductor on-off circuit turns off, described storage card power-off.
Realize the circuit of memory card write-protect switch and reset the most according to claim 1, it is characterised in that: also include with described
Metal-oxide-semiconductor on-off circuit connects and for indicating the condition indication circuit of described storage card power supply state.
Realize the circuit of memory card write-protect switch and reset the most according to claim 1, it is characterised in that: described triode switch
Circuit includes receiving the first end of described control signal, the first resistance, the second resistance, the 3rd resistance, the first audion;
Described first end is connected with one end of described first resistance, the other end of described first resistance and the one of described second resistance
End, one end of the 3rd resistance connect;
The other end ground connection of described second resistance, the other end of described 3rd resistance connects the base stage of the first audion;
The grounded emitter of described first audion, the colelctor electrode of described first audion is connected with described metal-oxide-semiconductor on-off circuit.
Realize the circuit of memory card write-protect switch and reset the most according to claim 1, it is characterised in that: described metal-oxide-semiconductor switchs
The second end that circuit includes being connected with the first transistor collector in described transistor switching circuit, the 4th resistance, the 5th resistance,
First metal-oxide-semiconductor, the 6th resistance, for the external power source interface that is connected with external dc power;
Described second end is connected with one end of described 4th resistance, the other end of described 4th resistance and described first metal-oxide-semiconductor G
Pole, one end of described 5th resistance connect;The described 5th resistance other end and described external power source interface, described first metal-oxide-semiconductor D
Pole connects;
The S pole of described first metal-oxide-semiconductor connects one end of the 6th resistance, storage card power interface;The other end of described 6th resistance
Ground connection.
Realize the circuit of memory card write-protect switch and reset the most according to claim 2, it is characterised in that: described state instruction electricity
Road includes the light emitting diode that positive pole is connected and be connected with described light emitting diode negative pole with described storage card power interface
Seven resistance, described 7th resistance eutral grounding.
Realize the circuit of memory card write-protect switch and reset the most according to claim 4, it is characterised in that: described metal-oxide-semiconductor switchs
Circuit also includes that the first electric capacity, described first electric capacity one end are connected with the described 5th resistance other end, described first electric capacity another
End is connected with described 5th resistance one end.
Priority Applications (1)
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CN201610460702.7A CN106098092A (en) | 2016-06-21 | 2016-06-21 | Realize the circuit of memory card write-protect switch and reset |
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CN201610460702.7A CN106098092A (en) | 2016-06-21 | 2016-06-21 | Realize the circuit of memory card write-protect switch and reset |
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CN201610460702.7A Pending CN106098092A (en) | 2016-06-21 | 2016-06-21 | Realize the circuit of memory card write-protect switch and reset |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107608493A (en) * | 2017-09-11 | 2018-01-19 | 郑州云海信息技术有限公司 | A kind of electric supply installation and method by the use of super capacitor as storage card stand-by power supply |
CN108073462A (en) * | 2016-11-14 | 2018-05-25 | 厦门雅迅网络股份有限公司 | A kind of SD card reads abnormal repositioning method and system |
CN109861191A (en) * | 2018-12-12 | 2019-06-07 | 广东吉米有品智能科技有限公司 | Protection method and protection circuit for realizing passing of large current by spring thimble |
CN110308778A (en) * | 2019-06-24 | 2019-10-08 | 杭州迪普科技股份有限公司 | A kind of lower electric protection method and electronic equipment of CF card |
WO2020093529A1 (en) * | 2018-11-06 | 2020-05-14 | 惠科股份有限公司 | Protection circuit for memory in display panel and display panel |
US11322187B2 (en) | 2018-11-06 | 2022-05-03 | HKC Corporation Limited | Protection circuit for memory in display panel and display panel |
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CN101740105A (en) * | 2008-11-24 | 2010-06-16 | 联发科技股份有限公司 | System and method for accessing memory card |
CN102446151A (en) * | 2010-10-13 | 2012-05-09 | 佳能企业股份有限公司 | Circuit for swapping a memory card in an electronic device |
CN102831924A (en) * | 2012-08-14 | 2012-12-19 | 青岛海信宽带多媒体技术有限公司 | Control method and control circuit for SD card |
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Patent Citations (4)
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CN101201888A (en) * | 2006-12-14 | 2008-06-18 | 华为技术有限公司 | Method and device for reducing CF card breakage |
CN101740105A (en) * | 2008-11-24 | 2010-06-16 | 联发科技股份有限公司 | System and method for accessing memory card |
CN102446151A (en) * | 2010-10-13 | 2012-05-09 | 佳能企业股份有限公司 | Circuit for swapping a memory card in an electronic device |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108073462A (en) * | 2016-11-14 | 2018-05-25 | 厦门雅迅网络股份有限公司 | A kind of SD card reads abnormal repositioning method and system |
CN108073462B (en) * | 2016-11-14 | 2022-05-03 | 厦门雅迅网络股份有限公司 | Reset method and system for SD card read exception |
CN107608493A (en) * | 2017-09-11 | 2018-01-19 | 郑州云海信息技术有限公司 | A kind of electric supply installation and method by the use of super capacitor as storage card stand-by power supply |
WO2020093529A1 (en) * | 2018-11-06 | 2020-05-14 | 惠科股份有限公司 | Protection circuit for memory in display panel and display panel |
US11322187B2 (en) | 2018-11-06 | 2022-05-03 | HKC Corporation Limited | Protection circuit for memory in display panel and display panel |
CN109861191A (en) * | 2018-12-12 | 2019-06-07 | 广东吉米有品智能科技有限公司 | Protection method and protection circuit for realizing passing of large current by spring thimble |
CN110308778A (en) * | 2019-06-24 | 2019-10-08 | 杭州迪普科技股份有限公司 | A kind of lower electric protection method and electronic equipment of CF card |
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Application publication date: 20161109 |
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