CN106091912B - Film thickness detecting device - Google Patents
Film thickness detecting device Download PDFInfo
- Publication number
- CN106091912B CN106091912B CN201610457727.1A CN201610457727A CN106091912B CN 106091912 B CN106091912 B CN 106091912B CN 201610457727 A CN201610457727 A CN 201610457727A CN 106091912 B CN106091912 B CN 106091912B
- Authority
- CN
- China
- Prior art keywords
- electrode
- detecting
- detecting electrode
- signal
- public
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
- G01B7/08—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using capacitive means
- G01B7/087—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using capacitive means for measuring of objects while moving
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
The invention discloses a kind of film thickness detecting devices.The film thickness detecting device includes：Public electrode；Detecting electrode, the detection surface of detecting electrode and the common surface of public electrode set to form the sense channel of film to be measured when detecting according to predeterminated position；Signal processing circuit is connected with detecting electrode, for eliminating the original deflection signal of detecting electrode.By the present invention, the accuracy of detection for improving film thickness detecting device is achieved the effect that.
Description
Technical field
The present invention relates to detection field, in particular to a kind of film thickness detecting device.
Background technology
Laminar article, such as the on-line continuous thickness measure of paper, bill, plastic film, textile fabric, in its product
Production, detection, processing, recycling etc. during in increasingly consequence.
In recent years, the technology that the thickness of laminar article is detected is studied constantly by interelectrode electrostatic induction
Among exploration.In order to realize above-mentioned detection, a kind of detection method of material thickness, the material thickness are provided in the related art
Detection method by the use of capacity plate antenna pole plate as the Sensitive Apparatus of Thickness sensitivity, survey electricity caused by the thickness change of object
Hold movable polar plate and generate displacement, the capacity of plate condenser is caused to change, is changed by the capacity of plate condenser
And then obtain the thickness of actual measurement object.
A kind of capacitive paper thickness sensor is additionally provided in the related art, and the capacitive paper thickness sensor is mainly by electricity
The volume change of container changes into the variation of frequency of oscillation, then the variation of frequency is converted into voltage by frequency pressure modular converter
Variation, thickness of paper is obtained by the variation of voltage.
Sense channel is also formed using opposite public electrode and detecting electrode in the related art, when object to be measured passes through
It during sense channel, by the size to detecting electrode voltage signal and analyzes and processes, the thickness of detection object can be calculated
Degree.
A kind of thickness transducer is additionally provided in the related art, and the detecting electrode of the thickness transducer is in main scanning direction
On be row's electrode, that is, n electrode is arranged in order, the shape size of electrode and interval can be set as required
It puts.But n detecting electrode be when making, it can there are the signal processing circuits of accuracy error and each detecting electrode to every
When a detecting electrode signal carries out output processing, because having accuracy error between the composition component of each circuit, cause each
The output signal of detecting electrode can be variant, if this intrinsic original deflection does not eliminate, when carrying out Manuscript scanner, and meeting
The signal output of original copy is directly affected, further influences the accuracy of detection of film thickness detecting device.
For film thickness detecting device in correlation technique accuracy of detection it is low the problem of, not yet propose effective solution party at present
Case.
The content of the invention
It is a primary object of the present invention to provide a kind of film thickness detecting device, detected at least solving film thickness in correlation technique
The problem of accuracy of detection of device is low.
To achieve these goals, according to an aspect of the invention, there is provided a kind of film thickness detecting device.The film thickness is examined
Surveying device includes：Public electrode；Detecting electrode, the detection surface of detecting electrode and the common surface of public electrode are according to default position
It installs to form the sense channel of film to be measured when detecting；And signal processing circuit, it is connected with detecting electrode, for disappearing
Except the original deflection signal of detecting electrode.
Further, which includes：Electrode reset circuit, for being performed to the electrode signal of detecting electrode
Reset processing；Electrode signal amplifying circuit, for being amplified processing to electrode signal；Shift control circuit, with electrode signal
Amplifying circuit is connected, and the amplified signal for being exported to electrode signal amplifying circuit carries out displacement output；And correlated double
Sample circuit is connected with shift control circuit, and the SIG signals for being exported according to shift control circuit eliminate detecting electrode
Original deflection signal.
Further, which includes：Amplifier, electrode input end and the SIG signals of amplifier
Output terminal is connected；Field-effect tube, the output terminal of field-effect tube are connected with the negative input of amplifier, are adopted by correlated double
The timing control signal of sample circuit is controlled；And capacitance, it is connected with field-effect tube, for storing charge, passes through control
Signal and charge input original deflection signal to the negative input of amplifier, pass through the electrode input end and amplifier of amplifier
Negative input eliminate original deflection signal.
Further, detecting electrode includes multiple detecting electrodes, the detection surface of multiple detecting electrodes and public electrode
Common surface is oppositely arranged to form sense channel, multiple detecting electrodes edges and the side of movement of film to be measured on the first preset direction
It is arranged at intervals on the second perpendicular and perpendicular with the first preset direction preset direction.
Further, which further includes：Common electrode substrate, wherein, public electrode is arranged on and first
On the first surface of the perpendicular common electrode substrate of preset direction；And detecting electrode substrate, wherein, detecting electrode is arranged on
On the first surface of detecting electrode substrate.
Further, which is arranged at intervals with common electrode substrate on the first preset direction, detection electricity
The first surface of electrode substrate towards common electrode substrate first surface, it is and parallel with the first surface of common electrode substrate.
Further, which further includes：Public electrode framework, wherein, common electrode substrate is arranged on public affairs
In common electrode framework；And detecting electrode framework, wherein, which is arranged in detecting electrode framework.
Further, detecting electrode framework is arranged at intervals with public electrode framework on the first preset direction.
Further, which further includes：Public electrode protective layer, public electrode protective layer are arranged on public
On the surface of electrode；And detecting electrode protective layer, detecting electrode protective layer are arranged on the surface of detecting electrode.
Further, which further includes：Public electrode conductive film, public electrode conductive film are arranged on
Between public electrode and public electrode protective layer；And detecting electrode conductive film, detecting electrode conductive film are arranged on detection
Between electrode and detecting electrode protective layer.
In the present invention, using public electrode；Detecting electrode, the detection surface of detecting electrode and the public sheet of public electrode
Face sets to form the sense channel of film to be measured when detecting according to predeterminated position；Signal processing circuit is connected with detecting electrode
It connects, for eliminating the original deflection signal of detecting electrode, the accuracy of detection for solving film thickness detecting device in correlation technique is low
Problem, and then improve the effect of the accuracy of detection of film thickness detecting device.
Description of the drawings
The attached drawing for forming the part of the application is used for providing a further understanding of the present invention, schematic reality of the invention
Example and its explanation are applied for explaining the present invention, is not constituted improper limitations of the present invention.In the accompanying drawings：
Fig. 1 is the schematic diagram of film thickness detecting device according to a first embodiment of the present invention；
Fig. 2 is the schematic diagram of film thickness detecting device according to a second embodiment of the present invention；
Fig. 3 is the schematic diagram of film thickness detecting device according to a third embodiment of the present invention；
Fig. 4 is the schematic diagram of signal processing circuit according to a first embodiment of the present invention；
Fig. 5 is the schematic diagram of the control sequential of film thickness detecting device according to a first embodiment of the present invention；
Fig. 6 is the schematic diagram of signal processing circuit according to a second embodiment of the present invention；
Fig. 7 is the schematic diagram of the control sequential of film thickness detecting device according to a second embodiment of the present invention；And
Fig. 8 is the schematic diagram of film thickness detecting device according to a fourth embodiment of the present invention.
Specific embodiment
It should be noted that in the case where there is no conflict, the feature in embodiment and embodiment in the application can phase
Mutually combination.The present invention will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
In order to which those skilled in the art is made to more fully understand application scheme, below in conjunction in the embodiment of the present application
The technical solution in the embodiment of the present application is clearly and completely described in attached drawing, it is clear that described embodiment is only
The embodiment of the application part, instead of all the embodiments.Based on the embodiment in the application, ordinary skill people
Member's all other embodiments obtained without making creative work should all belong to the model of the application protection
It encloses.
It should be noted that term " first " in the description and claims of this application and above-mentioned attached drawing, "
Two " etc. be the object for distinguishing similar, without being used to describe specific order or precedence.It should be appreciated that it so uses
Data can exchange in the appropriate case, so as to embodiments herein described herein.In addition, term " comprising " and " tool
Have " and their any deformation, it is intended that cover it is non-exclusive include, for example, containing series of steps or unit
Process, method, system, product or equipment are not necessarily limited to those steps or unit clearly listed, but may include without clear
It is listing to Chu or for the intrinsic other steps of these processes, method, product or equipment or unit.
An embodiment of the present invention provides a kind of film thickness detecting devices.
Fig. 1 is the schematic diagram of film thickness detecting device according to a first embodiment of the present invention.As shown in Figure 1, the film thickness detects
Device includes：Public electrode 10, detecting electrode 20 and signal processing circuit 30.
Public electrode 10, the public electrode 10 have common surface, are the sense channel that film to be measured passes through when detecting
One surface.
Detecting electrode 20, the detection surface of detecting electrode 20 and the common surface of public electrode 10 are set according to predeterminated position
To form the sense channel of film to be measured when detecting.
Detecting electrode 20 has the detection surface being detected to film to be measured, and the detection surface is public with public electrode 10
Surface is set according to predeterminated position, is led to so that forming the detection of film to be measured when detecting between detection surface and common surface
Road.Film to be measured is object to be measured, can be sheet-like article product, for example, paper, bill, plastic film, textile fabric etc..The inspection
Surveying passage has electric field, when film to be measured passes through sense channel, that is, when carrying out film scanning to be measured, public electrode 10 and detection
The dielectric constant of medium changes between electrode 10, and the amount of charge sensed on detecting electrode 20 is also with the change of dielectric constant
And change, the output voltage size on detecting electrode 20 also changes.It is differed by the thickness of film to be measured, common electrical
Dielectric constant between pole 10 and detecting electrode 20 also differs, and then the amount of charge sensed on detecting electrode 20 also differs,
Output voltage size on detecting electrode 20 also differs.The variable quantity of the voltage of detecting electrode 20 is the thickness according to film to be measured
Spend the voltage of output.
Optionally, the detection surface of detecting electrode 20 is oppositely arranged to form film to be measured with the common surface of public electrode 10
Sense channel when detecting so makes the electric field between sense channel more uniform, improves the detection of film thickness detecting device
Precision.
The detecting electrode 20 can be multiple detecting electrodes, for example, detecting electrode 20 is made of row's electrode, that is, should
One row's electrode is arranged in order by n electrode, positioned at the main scanning direction of film thickness detecting device.The n electrode gap is set,
The direction that the n detecting electrode is set can be vertical with the moving direction of film to be measured.The detecting electrode 20 can also be multiple rows of inspection
Electrode is surveyed, multiple rows of detecting electrode is scanned.
Signal processing circuit 30 is connected with detecting electrode 20, for eliminating the original deflection signal of detecting electrode 20.
Detecting electrode 20 is when making, since area, thickness, the uniformity of detecting electrode 20 etc. are there are deviation, in addition,
When output processing is carried out to the electrode signal of detecting electrode 20, because having accuracy error between the composition component of circuit, cause
The output signal of electrode can be variant, and this discrepant signal of tool is original deflection signal, due to depositing for original deflection signal
Make detecting electrode 20 output signal can not actual response film to be measured the corresponding voltage signal of thickness.Pass through signal processing
Circuit 30 is connected with detecting electrode 20, and original deflection signal is eliminated by the signal processing circuit 30, so as to fulfill
Eliminate the purpose of the original deflection signal of detecting electrode 20.
Optionally, signal processing circuit 30 is amplified the electrode signal of detecting electrode 20, obtains amplified signal, signal
Process circuit 30 can be amplified the electrode signal of multiple detecting electrodes, obtain magnifying electrode signal, and magnifying electrode is believed
Number displacement output is carried out, obtain SIG signals.The signal processing circuit 30 can also answer the electrode signal of detecting electrode 20
Position, so as to ensure detecting electrode 20 before the scanning of next line is carried out, electrode signal can reset to fixed voltage value, than
Such as, detecting electrode 20 is reset into GND, eliminates the residue signal on detecting electrode 20, improved sensing susceptibility, and then improve film
The accuracy of detection of thickness detector.The signal processing circuit 30 receives timing control signal, by capacitive charge storage, when passing through
The effect of sequence control signal and storage charge, makes original deflection signal input to the negative input of signal processing circuit 30.
Signal processing circuit 30 has negative input and electrode input end.When the level of clock is high level, signal
The signal of the negative input of process circuit 30 is equal to the original deflection signal of detecting electrode 20, the electrode input end letter of amplifier
Number be equal to negative input signal, be also the original deflection signal of detecting electrode 20；When the level of clock is low level, signal
The negative input signal of process circuit 30 no longer changes, equal to the original deflection signal of detecting electrode 20.It is public simultaneously
The timing control signal control public electrode 10 of electrode 10 is charged, and film detection to be measured is formed between public electrode 10 and detecting electrode 20
When sense channel, sense channel have electric field, when passing through, the electricity on detecting electrode 20 changes film to be measured, detection
The output voltage of electrode 20 also changes, and the voltage variety of detecting electrode 20 is the corresponding voltage letter of thickness of film to be measured
Number.When the level of clock is low level at this time, the signal of the electrode input end of signal processing circuit 30 is equal to SIG signals, that is,
Detecting electrode 20 exports signal in clock low as the sum of original deflection signal and voltage variety.Pass through signal processing electricity
The difference effect on road 30, negative input and electrode input end can eliminate the original deflection signal on detecting electrode 20,
Improve the precision of film thickness detecting device.
The embodiment passes through public electrode 10, detecting electrode 20, the detection surface of detecting electrode 20 and public electrode 10
Common surface sets to form the sense channel of film to be measured when detecting, signal processing circuit 30, with detection according to predeterminated position
Electrode 20 is connected, and for eliminating the original deflection signal of detecting electrode 20, has reached the detection essence for improving film thickness detecting device
The effect of degree.
As an alternative embodiment, signal processing circuit includes：Electrode reset circuit, for detecting electrode
Electrode signal performs reset processing；Electrode signal amplifying circuit, for being amplified processing to electrode signal；Shift control electricity
Road is connected with electrode signal amplifying circuit, and the amplified signal for being exported to electrode signal amplifying circuit carries out displacement output；
And correlated double sample circuit, it is connected with shift control circuit, the SIG signals for being exported according to shift control circuit disappear
Except the original deflection signal of detecting electrode.
Signal processing circuit includes electrode reset circuit.The electrode reset circuit is connected with detecting electrode, for inspection
The electrode signal for surveying electrode performs reset processing, periodically circuit can be resetted, so as to ensure detecting electrode in the case where carrying out
Before a line scanning, the electrode signal of detecting electrode can reset to fixed voltage value, for example, the electrode by detecting electrode
Signal resets to GND.Electrode reset circuit includes field-effect tube, and the break-make of the field-effect tube is controlled by reset signal.Work as clock
Level be high level when, field-effect tube connect, the electrode signal of detecting electrode is resetted.
Optionally, detecting electrode includes multiple detecting electrodes, and electrode reset circuit includes multiple electrodes reset circuit,
In, multiple electrodes reset circuit connects one to one with multiple detecting electrodes.Each detecting electrode reset circuit is to corresponding
Detecting electrode resetted, each detecting electrode reset circuit include field-effect tube, by reset signal control with electrode reset
The break-make of the corresponding field-effect tube of circuit, when field-effect tube corresponding with electrode reset circuit is connected, pair with electrode reset electricity
The electrode signal of the corresponding detecting electrode in road is resetted.
Signal processing circuit further includes electrode signal amplifying circuit.The electrode signal amplifying circuit is used for detecting electrode
Electrode signal is amplified processing, obtains magnifying electrode signal.Electrode signal amplifying circuit includes field-effect tube, passes through field-effect
Pipe is amplified processing to the electrode signal of detecting electrode, obtains magnifying electrode signal.
Optionally, detecting electrode includes multiple detecting electrodes, and electrode signal amplifying circuit amplifies including multiple electrodes signal
Circuit, the plurality of electrode signal amplifying circuit connect one to one with multiple detecting electrodes.The electrode signal of multiple detecting electrodes
Respectively processing is amplified by corresponding electrode signal amplifying circuit.Each detecting electrode signal amplification circuit includes field
Effect pipe, the threshold value of each field-effect tube is different but fixed, and the electrode signal of each detecting electrode passes through corresponding electric grade
The field-effect tube of signal amplification circuit is amplified electrode signal processing, and then obtains magnifying electrode signal.
The signal processing circuit further includes shift control circuit.The shift control circuit is connected with electrode signal amplifying circuit
It connects.Processing is amplified by electrode signal amplifying circuit in the electrode signal of detecting electrode, after obtaining amplified signal, is passed through
Shift control circuit carries out displacement output to amplified signal, that is, by the clock of shift control circuit by amplified signal according to
Tandem exports, and obtains SIG signals.Shift control circuit includes field-effect tube, and field-effect tube is controlled by shift control signal
Break-make.
Optionally, when detecting electrode includes multiple detecting electrodes, the field-effect tube in the shift control circuit includes more
It is a, it is corresponded with multiple detecting electrodes.Amplification of the shift control circuit to the electric grade signal amplification circuit output of each detection
Signal carries out displacement output, exports the letter caused by amplified signal simultaneously so as to avoid each detecting electrode signal amplification circuit
The problem of number obscuring the precise decreasing for causing film thickness detecting device.
The signal processing circuit further includes correlated double sampling, and (Correlated Double Sampling are referred to as
CDS) circuit.The correlated double sample circuit is connected with shift control circuit, for the SIG exported according to shift control circuit
Signal eliminates the original deflection signal of detecting electrode.
Because the threshold value of the field-effect tube of each detecting electrode signal amplification circuit is to differ but fixed, work as electrode
When the field-effect tube of signal amplification circuit is amplified the signal of detecting electrode, original deflection signal is introduced.In addition, detection
Electrode due to the limitation of technological level and production precision, also has original deflection signal, and electrode resets in the production process
The field-effect tube of circuit and the field-effect tube of shift control circuit also have the generation of original deflection signal.In the level of clock
For high level when, by electrode reset circuit reset signal control pole reset circuit field-effect tube connect, to detecting electrode into
Row resets, at this time the endless all reset of detecting electrode corresponding with the SIG signals of shift control circuit output.When the level of clock is
During low level, public electrode is charged, and sense channel is formed between public electrode and detecting electrode, which has electric field,
When film to be measured passes through sense channel, the electricity on detecting electrode changes, and the voltage on detecting electrode also becomes therewith
Change.But at this time the corresponding detecting electrode of SIG signals can not actual response film to be measured the corresponding voltage signal of thickness, inspection
Surveying the voltage that electrode is exported when the level of clock is low level includes original deflection signal.Due to depositing for original deflection signal
Affecting the accuracy of detection to film thickness to be measured.
The CDS circuits of the embodiment are used to eliminate original deflection signal.There is CDS circuits negative input and anode to input
End.When the level of clock is high level, the signal of the negative input of CDS circuits is equal to the original deflection letter of detecting electrode
Number, the electrode input end signal of CDS circuits is equal to negative input signal, is also the original deflection signal of detecting electrode；When
When the level of clock is low level, the negative input signal of CDS circuits no longer changes, equal to the original deflection of detecting electrode
Signal.The timing control signal control public electrode of public electrode is charged simultaneously, is formed and treated between public electrode and detecting electrode
Sense channel during film detection is surveyed, sense channel has electric field, and when passing through, the electricity on detecting electrode becomes film to be measured
Change, the output voltage of detecting electrode also changes, and the voltage variety of detecting electrode is the corresponding electricity of thickness of film to be measured
Press signal.When the level of clock is low level at this time, the signal of the electrode input end of CDS circuits is equal to SIG signals, that is, inspection
It surveys electrode and signal is exported in clock low as the sum of original deflection signal and voltage variety.Pass through the difference of CDS circuits
Effect, negative input and electrode input end can eliminate the original deflection signal on detecting electrode, so as to improve film thickness
The precision of detection device.
As an alternative embodiment, the correlated double sample circuit includes：Amplifier, the anode input of amplifier
End is connected with the output terminal of SIG signals；Field-effect tube, the output terminal of field-effect tube are connected with the negative input of amplifier
It connects, is controlled by the timing control signal of correlated double sample circuit；And capacitance, it is connected with field-effect tube, for depositing
Storing up electricity lotus inputs original deflection signal, by control signal and charge to the negative input of amplifier by amplifier just
The negative input of pole input terminal and amplifier eliminates original deflection signal.
CDS circuits include amplifier, and the electrode input end of amplifier is connected with the output terminal of SIG signals, amplifier
Negative input is connected with the output terminal for the field-effect tube that the timing control signal of CDS circuits is controlled, and passes through timing control
The charge storage effect of signal and capacitance, the negative input of amplifier is the original deflection signal on detecting electrode, by putting
The difference effect of big device, can will be intrinsic on detecting electrode that is, the difference of electrode input end signal and negative input signal
Original deflection signal eliminates, and improves the accuracy of detection of film thickness detecting device.
When the level of clock is high level, the timing control signal of CDS circuits and the control signal of electrode reset circuit
It is simultaneously high level, the field-effect tube of CDS circuits is made to be connected with the field-effect tube of electrode reset circuit, the cathode input of amplifier
The signal V- at end is the original deflection signal VRST of each electrode, and the electrode input end signal V+ of amplifier is the cathode of amplifier
Input end signal V-, that is, the original deflection signal VRST for detecting electrode.Optionally, amplifier has amplification factor G, puts
The output of big device is G × { (V+)-(V-) }, at this time the intrinsic original deflection signal VRST of (V+)=(V-)=detecting electrode, institute
The voltage (RV) 0 on the basis of the output of amplifier.
When the level of clock is low level, the control signal of CDS circuits and the control signal of electrode reset circuit are simultaneously
For low level, disconnect the field-effect tube of CDS circuits and the field-effect tube of electrode reset circuit.Due to the capacitance of CDS circuits
Effect, the negative input signal V- of amplifier also no longer change when clock is low level, that is, being detecting electrode
Original deflection signal VRST.Meanwhile the timing control signal of public electrode makes public electrode charged, public electrode and detection electricity
Sense channel is formed between pole, which has electric field, when film to be measured passes through sense channel, the electricity on the detecting electrode
Amount changes, and the output voltage of detecting electrode also changes, and optionally, the voltage variety of each detecting electrode is identical,
For V, V is the corresponding output voltage of thickness of film to be measured.At this point, the signal V+ of the electrode input end of amplifier believes equal to SIG
Number, that is, being the sum of original deflection signal VRST and V.It is acted on, will can each examined by the difference of the amplifier of CDS circuits
The intrinsic original deflection signal VRST surveyed on electrode is eliminated.Optionally, amplifier has amplification factor G, the output of amplifier
Signal is G × { (V+)-(V-) }=G × { (V+VRST)-VRST }=GV.By CDS circuits can will on detecting electrode it is intrinsic
Original deflection signal eliminate, so as to improve the precision of film thickness detecting device.
As an alternative embodiment, detecting electrode includes multiple detecting electrodes, the detection of the plurality of detecting electrode
The common surface of surface and public electrode is opposite to form sense channel on the first preset direction, and multiple detecting electrodes are along with treating
It surveys on perpendicular and perpendicular with the first preset direction the second preset direction of moving direction of film and is arranged at intervals.
Detecting electrode has detection surface, and public electrode has common surface.The detection surface of multiple detecting electrodes and public affairs
The common surface of common electrode is oppositely arranged on the first preset direction so as to form sense channel, which has electric field,
When film to be measured passes through sense channel, the electricity on detecting electrode changes, and the voltage on detecting electrode also becomes therewith
Change.Multiple detecting electrodes be along the second preset direction be arranged at intervals, for example, by the interval setting between multiple detecting electrodes into
5DPI, 10DPI, 50DPI, 100DPI etc..The moving direction of second preset direction and film to be measured is perpendicular, and presets side with first
To vertical.By by the common surface on the detection surface of multiple detecting electrodes and public electrode on the first preset direction it is opposite with
Form sense channel, multiple detecting electrodes are along perpendicular with the moving direction of film to be measured and perpendicular with the first preset direction the
It is arranged at intervals on two preset directions, so that the electric fields uniform of sense channel, improves detection of the film thickness detecting device to film to be measured
Precision.
The position that various ways set detecting electrode and public electrode, above-mentioned set-up mode may be employed in the embodiment of the present invention
The only preferred embodiment of the embodiment of the present invention, the position of the detecting electrode and public electrode that do not represent the embodiment of the present invention are set
Put and be only limitted to above-mentioned set-up mode, in order to improve the accuracy of detection to film to be measured, the detecting electrode of the embodiment of the present invention with it is public
The position of electrode sets and further includes other set-up modes, no longer illustrates one by one herein.
As an alternative embodiment, the film thickness detecting device further includes：Common electrode substrate, wherein, common electrical
Pole is arranged on the first surface of the common electrode substrate perpendicular with the first preset direction；And detecting electrode substrate, wherein,
Detecting electrode is arranged on the first surface of detecting electrode substrate.
Common electrode substrate has first surface, and detecting electrode substrate has second surface, and public electrode is arranged on public
On the first surface of electrode base board, the first surface of common electrode substrate and the first preset direction are perpendicular, and detecting electrode is set
On the first surface of detecting electrode substrate.
As an alternative embodiment, between the detecting electrode substrate and common electrode substrate are on the first preset direction
Every setting, the first surface of detecting electrode substrate towards common electrode substrate first surface, and with the of common electrode substrate
One surface is parallel.
Detecting electrode substrate and common electrode substrate are arranged at intervals, can be set according to public electrode and detecting electrode the
One preset direction is arranged at intervals, the first surface of the detecting electrode substrate towards common electrode substrate first surface, and
It is and parallel with the first surface of common electrode substrate.
As an alternative embodiment, the film thickness detecting device further includes：Public electrode framework, wherein, common electrical
Electrode substrate is arranged in public electrode framework；And detecting electrode framework, wherein, detecting electrode substrate is arranged on detecting electrode frame
On body.
Public electrode framework, for playing a supportive role for common electrode substrate, common electrode substrate is arranged on public electrode
In framework；Detecting electrode framework, for playing a supportive role for detecting electrode substrate, detecting electrode substrate is arranged on detecting electrode frame
On body.
As an alternative embodiment, detecting electrode framework is spaced with public electrode framework on the first preset direction
It sets.
Detecting electrode framework can be according to detecting electrode substrate and the side of public electrode basic setup with public electrode framework
Formula is configured, that is, being arranged at intervals on the first preset direction.
As an alternative embodiment, the film thickness detecting device further includes：Public electrode protective layer, public electrode are protected
Sheath is arranged on the surface of public electrode；Detecting electrode protective layer, detecting electrode protective layer are arranged on the surface of detecting electrode
On.
It is armor coated on the surface of public electrode, public electrode protective layer is formed, it is necessary to be applied on the surface of detecting electrode
Protective layer is covered, forms detecting electrode protective layer so as to ensure that public electrode and detecting electrode have very high wearability and anti-corrosion
Corrosion.Optionally, protective layer material is preferably provided with significant electric conductivity, wearability and anticorrosive property, with ensure public electrode and
Detecting electrode is after armor coated, and the detection sensitivity of public electrode and detecting electrode is still very high, those skilled in the art
The protective layer of suitable material can be selected according to actual conditions, so as to improve the precision of film thickness detecting device.
As an alternative embodiment, the film thickness detecting device further includes：Public electrode conductive film, public electrode
Conductive film is arranged between public electrode and public electrode protective layer；And detecting electrode conductive film, detecting electrode are conductive
Film is arranged between detecting electrode and detecting electrode protective layer.
Set respectively on public electrode and detecting electrode public electrode conductive film and detecting electrode conductive film so as to
Increase the electric charge induction intensity of detecting electrode, improve the accuracy of detection of film thickness detecting device.Public electrode conductive film and detection
Electrode conductive film is the film that high conductivity material is formed, and can be that films, the those skilled in the art such as gold or silver can roots
Suitable conductive film is selected according to actual conditions.Optionally, coated on the surface of public electrode and public electrode conductive film public
Common electrode protective layer coats detecting electrode protective layer, so as to ensure public affairs on the surface of detecting electrode and detecting electrode conductive film
Common electrode and detecting electrode have very high wearability and anticorrosive property.The public electrode protective layer and detecting electrode protective layer
Material is preferably provided with significant electric conductivity, wearability and anticorrosive property, ensures detecting electrode after armor coated, common electrical
The detection sensitivity of pole and detecting electrode is still very high, and those skilled in the art can select suitable material according to actual conditions
Protective layer, so as to improve the precision of film thickness detecting device.
Technical scheme is illustrated with reference to preferred embodiment.
Fig. 2 is the schematic diagram of film thickness detecting device according to a second embodiment of the present invention.As shown in Fig. 2, the film thickness detects
Device includes：Public electrode framework 11, common electrode substrate 12, public electrode 13, detecting electrode framework 21, detecting electrode substrate
22 and detecting electrode 23.
Detecting electrode 23 is row's electrode, that is, being arranged in order by n detecting electrode, the shape of detecting electrode 23
Size and interval can be configured as required, for example, detecting electrode be set to 5DPI, 10DPI, 50DPI,
100DPI etc..Public electrode 13 and detecting electrode 23 are separately positioned in common electrode substrate 12 and detecting electrode substrate 22, public
Common electrode substrate 12 and detecting electrode substrate 22 are separately positioned in public electrode framework 11 and detecting electrode framework 21 again.
Fig. 3 is the schematic diagram of film thickness detecting device according to a third embodiment of the present invention.As shown in figure 3, film thickness detection dress
Put including：Common electrode substrate 12, public electrode 13 and public electrode conductive film 14, public electrode protective layer 15, detection electricity
Electrode substrate 22, detecting electrode 23, detecting electrode conductive film 24 and detecting electrode protective layer 25.
Common electrode substrate 12, public electrode 13, detecting electrode substrate 22 and detecting electrode 23 and sheet in the embodiment
Effect in invention second embodiment is identical, and details are not described herein again.
Public electrode protective layer 15 is arranged on the surface of public electrode 13.
Detecting electrode protective layer 25 is arranged on the surface of detecting electrode 23.
Public electrode protective layer 15, detecting electrode 23 and inspection are applied on the surface of public electrode 13 and public electrode conductive film 14
The surface for surveying electrode conductive film 24 applies detecting electrode protective layer 25.Preferably, the material of protective layer has significant electric conductivity
Energy, wearability and anticorrosive property, so as to ensure that public electrode 13 and detecting electrode 23 have very high wearability and anticorrosion
Property, and ensure that public electrode 13 and the detection sensitivity of detecting electrode 23 are still very high, those skilled in the art can root
According to the protective layer of actual conditions selection suitable material.
Fig. 4 is the schematic diagram of signal processing circuit according to a first embodiment of the present invention.As shown in figure 4, the signal processing
Circuit includes：First detecting electrode E1, the second detecting electrode E2 ..., the (n-1)th detecting electrode En-1, the n-th detecting electrode En,
The first field-effect tube M11 of electrode signal amplifying circuit B1, the second field-effect tube M12 of electrode signal amplifying circuit B2 ...,
The (n-1)th field-effect tube M1n-1 of electrode signal amplifying circuit Bn-1, the n-th field-effect tube M1n of electrode signal amplifying circuit Bn,
The first resistor R1 of electrode signal amplifying circuit B1, the second resistance R2 of electrode signal amplifying circuit B2 ..., electrode signal puts
The (n-1)th resistance Rn-1 of big circuit Bn-1, the n-th resistance Rn of electrode signal amplifying circuit Bn, the first of electrode reset circuit A1
Field-effect tube M31, electrode reset circuit A2 the second field-effect tube M32 ..., (n-1)th of electrode reset circuit An-1 effect
It should pipe M3n-1, the first field-effect tube M21 of the n-th field-effect tube M3n of electrode reset circuit An, shift control circuit C, displacement
The second field-effect tube M22 of control circuit C ..., the (n-1)th field-effect tube M2n-1 of shift control circuit C, shift control electricity
The n-th field-effect tube M2n of road C.
The signal processing circuit of the embodiment includes multiple electrodes reset circuit, multiple electrodes signal amplification circuit and multiple
Shift control circuit.Multiple electrodes reset circuit is connected with multiple detecting electrodes one-to-one corresponding, and periodically circuit is resetted,
With ensure the first detecting electrode E1, the second detecting electrode E2 ..., the (n-1)th detecting electrode En-1, the n-th detecting electrode En into
Before the scanning of row next line, electrode signal can reset to fixed voltage value, the first detecting electrode E1 in the embodiment, the
Two detecting electrode E2 ..., the (n-1)th detecting electrode En-1, the n-th detecting electrode En reset to GND, reset circuit can be by resetting
RST signal control field-effect tube M31, M32 ..., the break-make of M3n-1, M3n, so as to the first detecting electrode E1, the second detection electricity
Pole E2 ..., the (n-1)th detecting electrode En-1, the n-th detecting electrode En resetted；First detecting electrode E1, the second detecting electrode
E2 ..., the (n-1)th detecting electrode En-1 to the n-th detecting electrode En be connected respectively with corresponding signal amplification circuit, signal is put
The field-effect tube MOSFET of big circuit be M11, M12 ..., M1n-1, M1n and first resistor R1, second resistance R2 ...,
(n-1)th resistance Rn-1, the n-th resistance Rn one-to-one corresponding are connected；The first detecting electrode E1, the second detecting electrode E2 ...,
N-1 detecting electrodes En-1, the electrode signal of the n-th detecting electrode En are after the amplification of respective electrode signal amplifying circuit, with shifting
Position control circuit, which is connected, carries out displacement output, which is SIG signals, wherein, the shifting in shift control circuit
Position control signal is one group of control signal SEL1, SEL2 ..., SELn-1, SELn, control successively in shift control circuit C
Field-effect tube M21, M22 ..., the break-make of M2n-1, M2n.
When the level of each clock of film thickness detecting device is low level, the control sequential control common electrical of public electrode
It is extremely charged, public electrode and the first detecting electrode E1, the second detecting electrode E2 ..., the (n-1)th detecting electrode En-1, the n-th detection
The sense channel of film to be measured when detecting is formed between electrode En, sense channel has electric field.When film to be measured passes through sense channel
When, the first detecting electrode E1, the second detecting electrode E2 ..., the electricity on the (n-1)th detecting electrode En-1, the n-th detecting electrode En
Change, the first detecting electrode E1, the second detecting electrode E2 ..., the (n-1)th detecting electrode En-1, the n-th detecting electrode En
Output voltage also changes.Assuming that the first detecting electrode E1, the second detecting electrode E2 ..., the (n-1)th detecting electrode En-1,
The voltage variety of n-th detecting electrode En is identical, is V, V is the corresponding output voltage signal of thickness of film to be measured, by this
Voltage signal can measure the thickness of film to be measured.
Fig. 5 is the schematic diagram of the control sequential of film thickness detecting device according to a first embodiment of the present invention.As shown in figure 5,
The embodiment includes control sequential CLK, control sequential RST, the shift control of electrode reset circuit of electrode signal amplifying circuit
Control sequential SEL1, SEL2 of circuit ..., SELn-1, SELn.In this embodiment, the control of electrode signal amplifying circuit
Sequential CLK, duty cycle (duty) is 50%, that is, within a clock cycle, high level accounts for the entire low and high level duration
Ratio.Reset signal is RST, and duty cycle 50%, the duty cycle of the control sequential of public electrode (CE) is 50%.At the 1st
Clock corresponds to the first detecting electrode E1, and the 2nd clock corresponds to the second detecting electrode E2, and so on, (n-1)th clock correspondence n-th-
1 detecting electrode En-1, the n-th detecting electrode of nth clock counter electrode En.When the level of each clock is high level, by multiple
Position signal RST control and the first detecting electrode E1, the second detecting electrode E2 ..., the (n-1)th detecting electrode En-1, the n-th detection electricity
En corresponding field-effect tube in pole is connected, to the first detecting electrode E1, the second detecting electrode E2 ..., the (n-1)th detecting electrode En-
1st, the n-th detecting electrode En is resetted.When the level of each clock is low level, the control sequential control of public electrode is public
Electrode is charged, public electrode and the first detecting electrode E1, the second detecting electrode E2 ..., the (n-1)th detecting electrode En-1, the n-th inspection
The sense channel of film to be measured when detecting is formed between survey electrode En, when film to be measured is when by sense channel, the first detection is electric
Pole E1, the second detecting electrode E2 ..., the electricity on the (n-1)th detecting electrode En-1, the n-th detecting electrode En change, first
Detecting electrode E1, the second detecting electrode E2 ..., the voltage of the (n-1)th detecting electrode En-1, the n-th detecting electrode En pass through respectively with
First detecting electrode E1, the second detecting electrode E2 ..., the corresponding field effect of the (n-1)th detecting electrode En-1, the n-th detecting electrode En
Should pipe be amplified into shift control circuit.The control sequential of the shift control signal of shift control circuit for SEL1,
SEL2 ..., SELn-1, SELn, in respective sequential high level, control shift control circuit in field-effect tube connect,
Signal displacement output, obtains SIG signals, the thickness of film to be measured can be detected by SIG signals.
Fig. 6 is the schematic diagram of signal processing circuit according to a second embodiment of the present invention.As shown in fig. 6, the embodiment exists
CDS circuits are added on the basis of the signal processing circuit of first embodiment of the invention.
It should be noted that electrode signal amplifying circuit B1, B2 ... Bn-1 and Bn, electrode reset circuit A1,
A2 ... the effect phase in the signal processing circuit of An-1 and An, the composition of shift control circuit C and first embodiment of the invention
Together, details are not described herein again.
The CDS circuits include amplifier AMP, field-effect tube M41 and capacitance C.The electrode input end V+ of amplifier AMP with
The output terminal of SIG signals is connected, and the negative input of amplifier AMP is controlled with CDS circuits by timing control signal CDS-C
The output terminal of field-effect tube M41 be connected, the charge storage for passing through CDS-C timing control and capacitance C acts on, amplifier AMP
Negative input V- be intrinsic original deflection signal on electrode, acted on by the difference of amplifier AMP, (V+)-(V-) can
The intrinsic original deflection signal on electrode to be eliminated, the output signal SIG-E of amplifier AMP is the thickness pair of film to be measured
The signal answered, so as to improve the accuracy of detection of film thickness detecting device.
When the level of the clock of film thickness detecting device is high level, the timing control signal and electrode of CDS circuits reset
The control signal of circuit is simultaneously high level, make the field-effect tube M41 of the CDS circuits and field-effect tube M11 of electrode reset circuit,
M12 ..., M1n-1, M1 connect, the signal V- of the negative input of amplifier AMP is the first detecting electrode E1, the second detection
Electrode E2 ..., the (n-1)th detecting electrode En-1, the original deflection signal of the n-th detecting electrode En, that is, being down at different moments
Original deflection signal VRST-E1、VRST-E2、……、VRST-En-1、VRST-En.The electrode input end signal V+ of amplifier AMP is amplifier
The negative input signal V- of AMP, that is, being original deflection signal VRST-E1、VRST-E2、……、VRST-En-1、VRST-En。
Optionally, amplifier has amplification factor G, by original deflection signal VRST-E1、VRST-E2、……、VRST-En-1、
VRST-EnUniformly it is set as VRST, the output of amplifier is G × { (V+)-(V-) }, and (V+)=(V-)=detecting electrode is intrinsic at this time
Original deflection signal VRST, so voltage RV is 0 on the basis of the output of amplifier.
When the level of the clock of film thickness detecting device is low level, the control signal of CDS circuits and electrode reset circuit
Control signal simultaneously for low level, make the field-effect tube M41 of the CDS circuits and field-effect tube M11 of electrode reset circuit,
M12 ..., M1n-1, M1n disconnect.Due to the effect of the capacitance C of CDS circuits, the negative input signal V- of amplifier AMP,
It also no longer changes when clock is low level, that is, lower for original deflection signal V at different momentsRST-E1、
VRST-E2、……、VRST-En-1、VRST-En.Meanwhile the timing control signal of public electrode makes public electrode charged, public electrode with
First detecting electrode E1, the second detecting electrode E2 ..., between the (n-1)th detecting electrode En-1, the n-th detecting electrode En formed inspection
Passage is surveyed, which has electric field, when film to be measured passes through sense channel, first detecting electrode E1, the second detection electricity
Pole E2 ..., the electricity on the (n-1)th detecting electrode En-1, the n-th detecting electrode En change, the first detecting electrode E1, second
Detecting electrode E2 ..., the (n-1)th detecting electrode En-1, the output voltage of the n-th detecting electrode En also change, optionally,
One detecting electrode E1, the second detecting electrode E2 ..., the (n-1)th detecting electrode En-1, the voltage variety V of the n-th detecting electrode En
Identical, voltage variety V is the corresponding output voltage of thickness of film to be measured.At this point, the letter of the electrode input end of amplifier AMP
Number V+ is equal to the SIG signals of shift control circuit output, that is, lower for V at different momentsRST-E1、VRST-E2、……、VRST-En-1、
VRST-En, it is acted on by the difference of amplifier AMP, that is, by (V+)-(V-), it can be by the intrinsic original on each detecting electrode
Beginning deviation signal VRST-E1、VRST-E2、……、VRST-En-1、VRST-EnIt eliminates.
Optionally, amplifier has amplification factor G, by original deflection signal VRST-E1、VRST-E2、……、VRST-En-1、
VRST-EnUniformly it is set as VRST, the output signal of amplifier AMP is G × { (V+)-(V-) }=G × { (V+VRST)-VRST}=GV.
Original deflection signal intrinsic on detecting electrode can be eliminated by CDS circuits, so as to improve film thickness detecting device
Precision.
Fig. 7 is the schematic diagram of the control sequential of film thickness detecting device according to a second embodiment of the present invention.As shown in fig. 7,
The embodiment includes the control sequential CLK to electrode signal amplifying circuit, the control sequential RST of electrode reset circuit, displacement control
The control sequential CDS-C of control sequential SEL1, SEL2 ... SELn-1, SELn and CDS circuit of circuit processed.Electrode signal is put
The big control sequential CLK of circuit, the control sequential RST of electrode reset circuit, shift control circuit control sequential SEL1,
SEL2 ... SELn-1, SELn are identical with the effect in the control sequential of the film thickness detecting device of first embodiment of the invention, this
Place repeats no more.
In electrode signal amplifying circuit, with the first detecting electrode E1, the second detecting electrode E2 ..., (n-1)th detection electricity
Pole En-1, the threshold value of the corresponding field-effect tube of the n-th detecting electrode En differ but fixed, when above-mentioned field-effect tube is right respectively
First detecting electrode E1, the second detecting electrode E2 ..., the signal of the (n-1)th detecting electrode En-1, the n-th detecting electrode En carries out
During amplification, introduce fixed deviation effects, similary first detecting electrode E1, the second detecting electrode E2 ..., the (n-1)th detection
Electrode En-1, the n-th detecting electrode En are in the production process because the limitation of technological level and production precision, for example, the first detection
Electrode E1, the second detecting electrode E2 ..., the (n-1)th detecting electrode En-1, the area of the n-th detecting electrode En, thickness, the uniformity
Deng limitation etc., also have fixed original deflection on each detecting electrode, and in reset control circuit with the first detection
Electrode E1, the second detecting electrode E2 ..., the (n-1)th detecting electrode En-1, the corresponding field-effect tube of the n-th detecting electrode En and shifting
Field-effect tube in the control circuit of position also has fixed deviation effects.Above-mentioned intrinsic original deflection is resulted in each clock
Level be high level when, by reset signal control sequential RST control reset control circuit in the first detecting electrode E1,
Second detecting electrode E2 ..., the (n-1)th detecting electrode En-1, the corresponding field-effect tube of the n-th detecting electrode En, to first detect
Electrode E1, the second detecting electrode E2 ..., the (n-1)th detecting electrode En-1, the n-th detecting electrode En resetted, shift control electricity
Output signal of the corresponding each detecting electrode when the level of clock is high level cannot be answered completely on the SIG signals of road output
Position, for example, the voltage signal that the first detecting electrode E1 is exported when the level of clock is high level is VRST-E1, the second detection electricity
The voltage signal that pole E2 is exported when the level of clock is high level is VRST-E2, and so on, the (n-1)th detecting electrode En-1 exists
The voltage signal exported when the level of clock is high level is VRST-En-1, the n-th detecting electrode En is high level in the level of clock
When the voltage signal that exports be VRST-En。
When the level of each clock is low level, the control sequential control public electrode of public electrode is charged, common electrical
Pole and the first detecting electrode E1, the second detecting electrode E2 ..., shape between the (n-1)th detecting electrode En-1, the n-th detecting electrode En
Into the sense channel of film to be measured when detecting, sense channel has electric field.When film to be measured passes through sense channel, the first detection electricity
Pole E1, the second detecting electrode E2 ..., the electricity on the (n-1)th detecting electrode En-1, the n-th detecting electrode En change, first
Detecting electrode E1, the second detecting electrode E2 ..., the (n-1)th detecting electrode En-1, the output voltage of the n-th detecting electrode En also send out
Changing.Assuming that the first detecting electrode E1, the second detecting electrode E2 ..., the (n-1)th detecting electrode En-1, the n-th detecting electrode En
Voltage variety it is identical, be V, V is the corresponding output voltage signal of thickness of film to be measured.It is but corresponding on SIG signals at this time
First detecting electrode E1, the second detecting electrode E2 ..., the (n-1)th detecting electrode En-1, the output signal of the n-th detecting electrode En
Can not actual response film to be measured the corresponding voltage signal of thickness, for example, the first detecting electrode E1 clock level to be low
The voltage signal exported during level is VE1=VRST-E1What+V, the second detecting electrode E2 were exported when the level of clock is low level
Voltage signal is VE2=VRST-E2+ V, and so on, what the (n-1)th detecting electrode En-1 was exported when the level of clock is low level
Voltage signal is VEn-1=VRST-En-1+ V, the voltage signal that the n-th detecting electrode En is exported when the level of clock is low level are
VEn=VRST-En+V.Due to the first detecting electrode E1, the second detecting electrode E2 ..., the (n-1)th detecting electrode En-1, n-th detection
Intrinsic original deflection signal V on electrode EnRST-E1、VRST-E2、……、VRST-En-1、VRST-EnPresence, affect film thickness detection
Device is to the accuracy of detection of film to be measured.
The embodiment is provided with CDS circuits.When the level of each clock is high level, the timing control letter of CDS circuits
The control signal RST of number CDS-C and electrode reset circuit is simultaneously high level, connects corresponding field-effect tube, amplifies at this time
The signal V- of the negative input of device is being equal to the original deflection signal V of each detecting electrode at different momentsRST-E1、
VRST-E2、……、VRST-En-1、VRST-En, the electrode input end signal V+ of amplifier is equal to the negative input signal V- of amplifier,
That is, the electrode input end signal V+ of amplifier is the intrinsic original deflection signal V of each electrodeRST-E1、VRST-E2、……、
VRST-En-1、VRST-En。
Optionally, the amplification factor of amplifier is G, and the output signal of amplifier is SIG-E, when the level of clock is high electricity
Usually SIG-E=G × { (V+)-(V-) }, the intrinsic original deflection signal of (V+)=(V-)=detecting electrode at this time, so SIG-
E=0=reference voltages.
When the level of each clock is low level, the control signal timing control signal CDS-C and electrode of CDS circuits are answered
The control signal RST of position circuit is simultaneously low level, disconnects corresponding field-effect tube.Since capacitance C makees the storage of charge
It with, the negative input signal V- of amplifier, also no longer changes when the level of clock is low level, at different moments etc.
In the intrinsic original deflection signal V of each detecting electrodeRST-E1、VRST-E2、……、VRST-En-1、VRST-En.While public electrode
Control sequential control public electrode is charged, and the sense channel of film to be measured when detecting is formed between public electrode and detecting electrode,
The sense channel has electric field, and when film to be measured passes through, electricity changes on detecting electrode, the output voltage of detecting electrode
It changes.Optionally, each detecting electrode voltage variety is identical, is V, V is that the corresponding voltage of thickness of film to be measured is defeated
Go out signal.The signal V+ of the electrode input end of amplifier is equal to the SIG signals of shift control circuit output at this time, that is, first
The voltage signal that detecting electrode is exported when the level of clock is low level is VE1=VRST-E1+ V, the second detecting electrode is in clock
The voltage signal that exports when being low level of level be VE2=VRST-E2+ V, and so on, the (n-1)th detecting electrode is in the electricity of clock
It is V to put down as the voltage signal exported during low levelEn-1=VRST-En-1+ V, the n-th detecting electrode is when the level of clock is low level
The voltage signal of output is VRST-En+V.It is acted on by the difference of amplifier, (V+)-(V-) can be by the intrinsic of each detecting electrode
Original deflection signal VRST-E1、VRST-E2、……、VRST-En-1、VRST-EnIt eliminates.
Optionally, by original deflection signal VRST-E1、VRST-E2、……、VRST-En-1、VRST-EnUniformly it is set to VRST.Work as clock
Level be low level when, SIG-E=G × { (V+)-(V-) }=G × { (V+VRST)-VRST}=GV.It can be with by CDS circuits
Intrinsic original deflection signal on each detecting electrode eliminates, so as to improve the accuracy of detection of film thickness detecting device.
Fig. 8 is the schematic diagram of film thickness detecting device according to a fourth embodiment of the present invention.As shown in figure 8, the film thickness detects
Device includes：Public electrode framework 11, common electrode substrate 12, public electrode 13, public electrode protection board 16, detecting electrode
Framework 21, detecting electrode substrate 22, detecting electrode 23 and detecting electrode protection board 26.
Public electrode 13 and detecting electrode 23, public electrode 13 and detecting electrode 23 are separately positioned on common electrode substrate 12
On detecting electrode substrate 22, common electrode substrate 12 and detecting electrode substrate 22 are separately positioned on 11 He of public electrode framework again
In detecting electrode framework 21；In order to protect public electrode 13 and detecting electrode 23 is not worn and corrodes, in public electrode frame
Public electrode protection board 16 and detecting electrode protection board 26, public electrode protection are additionally provided on body 11 and detecting electrode framework 21
The material of plate 16 and detecting electrode protection board 26 can be glass plate or plastic plate, and those skilled in the art can be according to reality
Situation selects the protection board of suitable material, so as to improve the accuracy of detection of film thickness detecting device.
Optionally, the detecting electrode 23 of the film thickness detecting device of the embodiment, is not limited to row's detecting electrode, two rows and
Multiple rows of detecting electrode is equally applicable.
Obviously, those skilled in the art should be understood that each module of the above-mentioned present invention or each step can be with general
Computing device realize that they can concentrate on single computing device or be distributed in multiple computing devices and be formed
Network on, optionally, they can be realized with the program code that computing device can perform, it is thus possible to which they are stored
In the storage device by computing device come perform either they are fabricated to respectively each integrated circuit modules or by they
In multiple modules or step be fabricated to single integrated circuit module to realize.In this way, the present invention is not limited to any specific
Hardware and software combines.
The foregoing is only a preferred embodiment of the present invention, is not intended to limit the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.Within the spirit and principles of the invention, that is made any repaiies
Change, equivalent substitution, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of film thickness detecting device, which is characterized in that including：
Public electrode；
Detecting electrode, the common surface of detection surface and the public electrode of the detecting electrode according to predeterminated position set with
Form the sense channel of film to be measured when detecting；And
Signal processing circuit is connected with the detecting electrode, for eliminating the original deflection signal of the detecting electrode；
Wherein, the signal processing circuit includes：Correlated double sample circuit, when the level of clock is high level, the phase
The signal for closing the negative input of double sampler circuit is equal to the original deflection signal of the detecting electrode, in the clock
Level when being low level, the electrode input end signal of the correlated double sample circuit is equal to the shifting of the signal processing circuit
The SIG signals of position control circuit output, the SIG signals are used to eliminate the original deflection signal of the detecting electrode.
2. film thickness detecting device according to claim 1, which is characterized in that the signal processing circuit includes：
Electrode reset circuit, for performing reset processing to the electrode signal of the detecting electrode；
Electrode signal amplifying circuit, for being amplified processing to the electrode signal；
Shift control circuit is connected with the electrode signal amplifying circuit, for being exported to the electrode signal amplifying circuit
Amplified signal carry out displacement output；And
The correlated double sample circuit, is connected with the shift control circuit.
3. film thickness detecting device according to claim 2, which is characterized in that the correlated double sample circuit includes：
Amplifier, the electrode input end of the amplifier are connected with the output terminal of the SIG signals；
Field-effect tube, the output terminal of the field-effect tube are connected with the negative input of the amplifier, by described related two
The timing control signal of resampling circuit is controlled；And
Capacitance is connected with the field-effect tube, for storing charge, is put by the control signal and the charge to described
The negative input of big device inputs the original deflection signal, passes through the electrode input end of the amplifier and the amplifier
Negative input eliminates the original deflection signal.
4. film thickness detecting device according to claim 1, which is characterized in that the detecting electrode includes multiple detection electricity
Pole, the detection surface of the multiple detecting electrode are oppositely arranged with the common surface of the public electrode on the first preset direction
To form the sense channel, the multiple detecting electrode is along perpendicular with the moving direction of the film to be measured and with described first
It is arranged at intervals on the second perpendicular preset direction of preset direction.
5. film thickness detecting device according to claim 4, which is characterized in that further include：
Common electrode substrate, wherein, the public electrode is arranged on the public electrode base perpendicular with first preset direction
On the first surface of plate；And
Detecting electrode substrate, wherein, the detecting electrode is arranged on the first surface of the detecting electrode substrate.
6. film thickness detecting device according to claim 5, which is characterized in that the detecting electrode substrate and the common electrical
Electrode substrate is arranged at intervals on first preset direction, and the first surface of the detecting electrode substrate is towards the public electrode
The first surface of substrate, and it is parallel with the first surface of the common electrode substrate.
7. film thickness detecting device according to claim 5, which is characterized in that further include：
Public electrode framework, wherein, the common electrode substrate is arranged in the public electrode framework；And
Detecting electrode framework, wherein, the detecting electrode substrate is arranged in the detecting electrode framework.
8. film thickness detecting device according to claim 7, which is characterized in that the detecting electrode framework and the common electrical
Pole framework is arranged at intervals on first preset direction.
9. film thickness detecting device according to claim 1, which is characterized in that further include：
Public electrode protective layer, the public electrode protective layer are arranged on the surface of the public electrode；And
Detecting electrode protective layer, the detecting electrode protective layer are arranged on the surface of the detecting electrode.
10. film thickness detecting device according to claim 9, which is characterized in that further include：
Public electrode conductive film, the public electrode conductive film are arranged on the public electrode and public electrode protection
Between layer；And
Detecting electrode conductive film, the detecting electrode conductive film are arranged on the detecting electrode and detecting electrode protection
Between layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610457727.1A CN106091912B (en) | 2016-06-21 | 2016-06-21 | Film thickness detecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610457727.1A CN106091912B (en) | 2016-06-21 | 2016-06-21 | Film thickness detecting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106091912A CN106091912A (en) | 2016-11-09 |
| CN106091912B true CN106091912B (en) | 2018-05-25 |
Family
ID=57238936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610457727.1A Active CN106091912B (en) | 2016-06-21 | 2016-06-21 | Film thickness detecting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106091912B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2922376B2 (en) * | 1992-12-26 | 1999-07-19 | キヤノン株式会社 | Sheet thickness measuring device |
| CN1507743A (en) * | 2002-01-17 | 2004-06-23 | ���ṫ˾ | Solid state imaging apparatus and drive method thereof |
| CN101835001A (en) * | 2009-01-28 | 2010-09-15 | 索尼公司 | The driving method of device for solid photography, device for solid photography and camera head |
| CN105321254A (en) * | 2015-11-06 | 2016-02-10 | 威海华菱光电股份有限公司 | Equipment, method and device for detecting thickness of measured object |
| CN105318819A (en) * | 2015-11-04 | 2016-02-10 | 威海华菱光电股份有限公司 | Membrane thickness detection device |
| CN105488896A (en) * | 2015-12-31 | 2016-04-13 | 威海华菱光电股份有限公司 | Bank note detection apparatus |
| CN205748256U (en) * | 2016-06-21 | 2016-11-30 | 威海华菱光电股份有限公司 | Film thickness detecting device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080094426A (en) * | 2007-04-20 | 2008-10-23 | 기산전자 주식회사 | Apparatus for detecting tape-paste banknote and detecting method the same |
-
2016
- 2016-06-21 CN CN201610457727.1A patent/CN106091912B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2922376B2 (en) * | 1992-12-26 | 1999-07-19 | キヤノン株式会社 | Sheet thickness measuring device |
| CN1507743A (en) * | 2002-01-17 | 2004-06-23 | ���ṫ˾ | Solid state imaging apparatus and drive method thereof |
| CN101835001A (en) * | 2009-01-28 | 2010-09-15 | 索尼公司 | The driving method of device for solid photography, device for solid photography and camera head |
| CN105318819A (en) * | 2015-11-04 | 2016-02-10 | 威海华菱光电股份有限公司 | Membrane thickness detection device |
| CN105321254A (en) * | 2015-11-06 | 2016-02-10 | 威海华菱光电股份有限公司 | Equipment, method and device for detecting thickness of measured object |
| CN105488896A (en) * | 2015-12-31 | 2016-04-13 | 威海华菱光电股份有限公司 | Bank note detection apparatus |
| CN205748256U (en) * | 2016-06-21 | 2016-11-30 | 威海华菱光电股份有限公司 | Film thickness detecting device |
Non-Patent Citations (1)
| Title |
|---|
| 一种双采样电路在CMOS图像传感器中的应用;崔博;《计算机与数字工程》;20070630;第38卷(第6期);第120-122页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106091912A (en) | 2016-11-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105136011B (en) | The detection device of film thickness | |
| CN106091910B (en) | The detection device of film thickness | |
| CN100410621C (en) | Electrostatic capacitance detection device | |
| CN105318819B (en) | The detection device of film thickness | |
| CN105321254B (en) | Detect equipment, the method and device of testee thickness | |
| CN103925867A (en) | Thickness sensor and thickness measuring method | |
| CN105806206B (en) | Thickness detection apparatus | |
| CN205748256U (en) | Film thickness detecting device | |
| CN103985189A (en) | Device for measuring thickness of banknote | |
| DE59900961D1 (en) | CAPACITIVE IMAGE DETECTION METHOD | |
| CN106197248A (en) | The detection device of thickness | |
| CN103929562B (en) | Imaging sensor, image scanning and thickness detecting method | |
| CN103971445A (en) | Paper money thickness detecting device | |
| CN106091912B (en) | Film thickness detecting device | |
| KR102079147B1 (en) | Film thickness detection device and method | |
| CN203800995U (en) | Image sensor | |
| CN105136012A (en) | Detection apparatus of film thickness | |
| KR20020000789A (en) | Inspection apparatus and sensor | |
| CN205027302U (en) | Detection apparatus for membrane is thick | |
| CN106441067B (en) | Thickness detection apparatus and method | |
| CN205919779U (en) | Detection apparatus for membrane is thick | |
| CN206019570U (en) | Thickness detection apparatus | |
| CN206627061U (en) | Film thickness detecting device | |
| CN205103922U (en) | Detect equipment of testee thickness | |
| CN205102769U (en) | Detection apparatus for membrane is thick |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |